TWI691014B - 具有改善的ｒｆ返回的基板支撐件 - Google Patents

具有改善的ｒｆ返回的基板支撐件 Download PDF

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Publication number
TWI691014B
TWI691014B TW105104312A TW105104312A TWI691014B TW I691014 B TWI691014 B TW I691014B TW 105104312 A TW105104312 A TW 105104312A TW 105104312 A TW105104312 A TW 105104312A TW I691014 B TWI691014 B TW I691014B
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TW
Taiwan
Prior art keywords
substrate
substrate support
conductive element
disposed
support
Prior art date
Application number
TW105104312A
Other languages
English (en)
Chinese (zh)
Other versions
TW201703182A (zh
Inventor
卡曼司亞拉文德密亞
蔡振雄
拉菲傑立巴利
松下智治
張鈾
Original Assignee
美商應用材料股份有限公司
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Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201703182A publication Critical patent/TW201703182A/zh
Application granted granted Critical
Publication of TWI691014B publication Critical patent/TWI691014B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW105104312A 2015-02-13 2016-02-15 具有改善的ｒｆ返回的基板支撐件 TWI691014B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562116218P 2015-02-13 2015-02-13
US62/116,218 2015-02-13
US15/019,573 2016-02-09
US15/019,573 US10134615B2 (en) 2015-02-13 2016-02-09 Substrate support with improved RF return

Publications (2)

Publication Number Publication Date
TW201703182A TW201703182A (zh) 2017-01-16
TWI691014B true TWI691014B (zh) 2020-04-11

Family

ID=56615690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105104312A TWI691014B (zh) 2015-02-13 2016-02-15 具有改善的ｒｆ返回的基板支撐件

Country Status (7)

Country Link
US (1) US10134615B2 (enExample)
JP (1) JP6843752B2 (enExample)
KR (1) KR102537310B1 (enExample)
CN (1) CN107210180B (enExample)
SG (1) SG11201706020QA (enExample)
TW (1) TWI691014B (enExample)
WO (1) WO2016130744A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10325790B2 (en) * 2016-04-29 2019-06-18 Applied Materials, Inc. Methods and apparatus for correcting substrate deformity
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
JP6762184B2 (ja) * 2016-09-26 2020-09-30 株式会社Ｓｃｒｅｅｎホールディングス 回収配管洗浄方法および基板処理装置
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110100552A1 (en) * 2009-08-31 2011-05-05 Rajinder Dhindsa Radio frequency (rf) ground return arrangements
US20130001215A1 (en) * 2011-06-30 2013-01-03 Applied Materials, Inc. Substrate support with substrate heater and symmetric rf return

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020022403A1 (en) * 1999-08-06 2002-02-21 Wing L. Cheng Connectors for an eletrostatic chuck
JP3718093B2 (ja) * 2000-01-20 2005-11-16 ローム株式会社 半導体製造装置
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
US20080179011A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with wide process window employing plural vhf sources
KR101006848B1 (ko) * 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
US20100000684A1 (en) 2008-07-03 2010-01-07 Jong Yong Choi Dry etching apparatus
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
JP2012234951A (ja) * 2011-04-28 2012-11-29 Mitsubishi Heavy Ind Ltd 真空処理装置およびその電極面間隔調整方法
US10224182B2 (en) * 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9340866B2 (en) * 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9404176B2 (en) 2012-06-05 2016-08-02 Applied Materials, Inc. Substrate support with radio frequency (RF) return path

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110100552A1 (en) * 2009-08-31 2011-05-05 Rajinder Dhindsa Radio frequency (rf) ground return arrangements
US20130001215A1 (en) * 2011-06-30 2013-01-03 Applied Materials, Inc. Substrate support with substrate heater and symmetric rf return

Also Published As

Publication number Publication date
SG11201706020QA (en) 2017-09-28
JP6843752B2 (ja) 2021-03-17
KR102537310B1 (ko) 2023-05-25
JP2018508994A (ja) 2018-03-29
TW201703182A (zh) 2017-01-16
WO2016130744A1 (en) 2016-08-18
US10134615B2 (en) 2018-11-20
US20160240426A1 (en) 2016-08-18
KR20170117510A (ko) 2017-10-23
CN107210180A (zh) 2017-09-26
CN107210180B (zh) 2019-12-13

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