TWI688027B - 基板處理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 186
- 239000007789 gas Substances 0.000 claims abstract description 47
- 239000011261 inert gas Substances 0.000 claims abstract description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 60
- 239000001301 oxygen Substances 0.000 claims description 60
- 229910052760 oxygen Inorganic materials 0.000 claims description 60
- 238000012545 processing Methods 0.000 claims description 30
- 230000007704 transition Effects 0.000 claims description 16
- 238000003672 processing method Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 38
- 238000011282 treatment Methods 0.000 description 17
- 229910001873 dinitrogen Inorganic materials 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 238000001816 cooling Methods 0.000 description 11
- 238000002408 directed self-assembly Methods 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 229920001400 block copolymer Polymers 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000012951 Remeasurement Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
一種基板處理方法,其係將形成有處理膜之基板載置於熱處理腔室內之熱處理空間進行熱處理,且上述方法包含以下步驟:排氣步驟,其將上述熱處理空間之氣體排氣;惰性氣體供給步驟,其對上述熱處理空間供給惰性氣體;及熱處理步驟,其對上述熱處理空間之基板進行熱處理。
Description
本發明係關於一種對半導體晶圓、液晶顯示器用基板、有機EL(Electroluminescence,電致發光)顯示裝置等FPD(Flat Panel Display,平板顯示器)用基板、光顯示器用基板、磁碟用基板、磁光碟用基板、光罩用基板、太陽電池用基板(以下,簡稱為基板)進行熱處理之基板處理方法。
於最近之製程技術中,作為代替浸潤式微影或極紫外線(EUV:Extreme Ultraviolet Lithography,極紫外線微影)微影之技術,例如,DSA(Directed Self Assembly,定向自組織化)製程受到關注。DSA製程係為了進一步提高基板上之微細化,而使用利用嵌段共聚物之微相分離之誘導自組織化(DSA:Directed Self Assembly)技術者。 此種DSA製程中之先前之基板處理方法係將BCP(Block Co-Polymer,嵌段共聚物)塗佈於基板形成處理膜之後,於熱處理腔室之熱處理空間中進行加熱基板之處理膜之熱處理,而使處理膜中之兩種聚合物相互(相)分離。然後,藉由對經(相)分離之一聚合物進行蝕刻而形成微細之圖案(例如,參照日本專利特開2014-22570號公報)。 然而,於具有此種構成之先前例之情形時,存在如下問題。 即,於先前之方法中,存在有時藉由熱處理空間中所形成之處理氣氛無法使處理膜中之聚合物適當地分離之問題。又,如DSA製程以外之製程、例如於將SOG(Spin On Glass,旋塗式玻璃)溶液塗佈於基板之後進行熱處理而產生膜之製程等般,於在熱處理腔室內對基板進行熱處理之製程中,有時亦會因熱處理空間中所形成之處理氣氛而使經成膜之膜之特性、性能產生問題。
本發明係鑒於此種情況而完成者,其目的在於提供一種基板處理方法,其可藉由在熱處理製程中形成較佳之熱處理空間之處理氣氛而適當地進行成膜。 本發明者等為了解決上述問題進行了銳意研究,結果獲得如下之知識見解。 於熱處理腔室中於熱處理空間之各種處理氣氛下進行熱處理之後,根據熱處理空間之各種參數與聚合物之分離狀態之關係而著眼於由熱處理空間之氧所引起之影響。其原因在於,發現產生聚合物之(相)分離不適當地進行之現象之情形係熱處理空間之氧濃度未充分下降之熱處理之情形。再者,推測於氧濃度未充分下降之情形時,聚合物於相分離時受到不良影響,而正常之相分離受到阻礙。又,於DSA製程以外之熱處理製程中,起因於氧之氧化亦對成膜之特性帶來不良影響。基於此種知識見解之本發明構成為如下。 即,本發明係一種基板處理方法,其將形成有處理膜之基板載置於熱處理腔室內之熱處理空間進行熱處理,且上述方法包含以下步驟:排氣步驟,其將上述熱處理空間之氣體排氣;惰性氣體供給步驟,其對上述熱處理空間供給惰性氣體;及熱處理步驟,其對上述熱處理空間之基板進行熱處理。 根據本發明,首先僅進行排氣步驟而將熱處理空間之氣體排氣之後,藉由惰性氣體供給步驟而將惰性氣體供給至熱處理空間。由於在熱處理空間內設為負壓之狀態下供給惰性氣體,故而與僅供給惰性氣體或僅進行排氣或同時進行惰性氣體之供給與排氣之情形相比較,熱處理空間內之壓力與惰性氣體之供給壓力之差變大,因此可將熱處理空間內之氣體以短時間置換為惰性氣體。又,由於可使熱處理空間內之氧濃度極低,故而可使熱處理步驟中之熱處理空間之處理氣氛適合於熱處理製程,而可適當地進行成膜。 又,於本發明中,較佳為,上述惰性氣體供給步驟包括緊接於上述排氣步驟之後之第1惰性氣體供給步驟、及緊接於上述熱處理步驟之前之第2惰性氣體供給步驟,且上述第1惰性氣體供給步驟為儘量將上述熱處理腔室內維持為負壓之惰性氣體之供給量。 於第1惰性氣體供給步驟中,使排氣量較惰性氣體之供給量多而設為負壓。滯留於熱處理腔室內之角部等之氧較之惰性氣體之流動而藉由排氣之流動更容易排出。因此,可進一步降低氧濃度。 又,於本發明中,較佳為,上述第2惰性氣體供給步驟使上述排氣步驟中之排氣停止,對上述熱處理腔室內僅供給惰性氣體。 藉由使排氣停止,僅供給惰性氣體,而可使熱處理空間內之流動產生變化。因此,可將滯留於熱處理空間內之氧隨著流動之變化而排出,而可進一步降低氧濃度。 又,於本發明中,較佳為,於預先測定自使上述熱處理空間之氧濃度成為目標值以下之上述排氣步驟起之經過時間,並將上述經過時間設為熱處理移行時間之情形時,於自上述排氣步驟起經過上述熱處理移行時間之時間點移行至上述熱處理步驟。 由於僅藉由計測熱處理移行時間即可向熱處理步驟移行,故而可簡化熱處理腔室之構成,可抑制處理所需之成本。 又,於本發明中,較佳為,於上述熱處理步驟之前,實施測定上述熱處理空間之氧濃度之氧濃度測定步驟,且僅於上述氧濃度為目標值以下之情形時,實施上述熱處理步驟。 由於僅於在氧濃度測定步驟中能夠確認氧濃度實際為目標值以下之情形時,實施熱處理步驟,故而可進行確實之處理。 又,於本發明中,較佳為,於上述氧濃度測定步驟之上述氧濃度未到達目標值以下之情形時,發出警報。 由於在氧濃度未達到目標值之情形時,發出警報,故而可阻止移行至熱處理,而防止不適當之處理於未然。 又,於本發明中,較佳為,上述排氣步驟係自形成於上述熱處理腔室之側方且相當於上述熱處理空間之縱截面面積之流路截面面積之排氣口將氣體排氣。 由於經由較大之流路截面面積之排氣來排氣,故而可有效率地進行排氣步驟中之排氣。 又,本發明中,較佳為,上述排氣步驟係通過供於載置基板之熱處理板進退之支持銷插通且連通於上述熱處理空間之貫通口將氣體排氣。 由於通過形成於熱處理時載置基板之場所之附近之貫通口進行排氣,故而可有效率地降低於熱處理時帶來較大影響之基板周圍之氧濃度。又,由於因支持銷之滑動而產生之塵埃不會進入至熱處理空間而排出,故而可清潔地進行處理。 又,於本發明中,較佳為,上述基板形成有由誘導自組織化材料構成之處理膜。 可使熱處理空間之處理氣氛適合於DSA製程,而可使聚合物適當地(相)分離。
以下,參照圖式對本發明之一實施例進行說明。 圖1係表示實施例之基板處理裝置之整體構成之概略構成圖。 用以實施本實施例之基板處理方法之基板處理裝置係對基板W進行熱處理者。作為一例,本實施例中之基板W設為於表面形成有由誘導自組織化材料構成之處理膜者。 本實施例之基板處理裝置具備熱處理板部1、熱處理腔室3、上部氣體供給部5、擋板部7、腔室排氣部9、支持銷升降部11、下部氣體供給部13、支持銷密封排氣部15、控制部17、及設定部19。 熱處理板部1係用以將基板W載置於其上表面並進行熱處理者。熱處理板部1具備底板21、熱處理板23、及加熱器25。底板21供安裝熱處理板23之下部,且與熱處理板23一起安裝於熱處理腔室3之下部。熱處理板23例如由以銅(Cu)或鋁(Al)等熱導率較高之金屬為基材之材料構成。熱處理板23中埋設有加熱器25,藉由該加熱器25而調節熱處理板23之溫度。熱處理板23例如藉由加熱器25而以300~400℃之範圍調節溫度。該熱處理板23係於表面埋設有未圖示之近接鋼珠,且使基板W之下表面與熱處理板23之表面隔開特定間隔(例如,0.1 mm)而載置。 熱處理板23係於在俯視下相當於正三角形之頂點之位置形成有貫通口27。該等貫通口27自熱處理板23之上表面貫通至下表面,進而亦貫通底板21而形成,且供下述支持銷插通。又,於熱處理板23之中央部附近,形成有於上下方向貫通熱處理板23及底板21之板上表面供給口29。 熱處理腔室3具備蓋部31。蓋部31係於下部具備開口,且於該開口安裝有上述熱處理板部1。蓋部31呈包圍熱處理板部1之側方及上方之形狀。於蓋部31之頂面與熱處理板23之上表面之間形成有空間。該空間為熱處理空間HS。於蓋部31之一側之側面,形成有搬入搬出口33。該搬入搬出口33用於將要處理之基板W搬入至熱處理空間HS或將經處理過之基板W自熱處理空間HS搬出。於搬入搬出口33之周圍,安裝有冷卻管35。該冷卻管35利用所供給之冷卻水而將蓋部31冷卻,保護搬入搬出口33之周圍之O形環。 於位於搬入搬出口33之相反側之蓋部31之側面形成有排氣口37。該排氣口37係用以將蓋部31內之氣體排出者。該排氣口37具有相當於熱處理空間HS之縱截面面積之程度之流路截面面積。於排氣口37之外側,介隔O形環而裝卸自如地設置有排氣口蓋39。蓋部31之頂面形成有複數個貫通口41。於蓋部31中熱處理板部1之周圍,於與熱處理板23之外周面之間存在俯視環狀之間隙43。於面向該間隙43之蓋部31之側面,形成有連通於間隙43之開口45。開口45例如設置於在俯視下對向之兩個部位。於開口45之下方,於蓋部31之外表面配置有冷卻管35。該冷卻管35保護蓋部31與底板21之間之O形環。下部氣體供給部13向開口45及板上表面供給口29供給氮氣。下部氣體供給部13具備複數個流量調整閥或開閉閥,且構成為能夠調整氮氣之流量。 上述排氣口37係通過相當於熱處理空間HS之縱截面面積之程度之較大流路截面面積之排氣而進行排氣,故而可有效率地進行排氣。 於蓋部31之上方且搬入搬出口33側,配置有壓力感測器47。又,於蓋部31之上方且排氣口37側,配置有氧濃度感測器49。壓力感測器47測定熱處理空間HS內之壓力,氧濃度感測器49測定熱處理空間HS內之氧濃度。再者,氧濃度感測器49如下所述,僅於測定氧濃度成為目標值以下之經過時間之實驗時使用,於通常之處理時不需要配備。 於蓋部31之上部,配置有氣體供給緩衝部51。自蓋部31之上表面中心部供給之氮氣(N2
)係於內部向周圍擴散,並且自面積較上表面中心部大之下表面開口部通過複數個貫通口41而供給至熱處理空間HS內。於蓋部31之上表面與氣體供給緩衝部51之下表面之間,配置有O形環。於氣體供給緩衝部51之內部,配備有冷卻管35。該冷卻管35保護上述O形環。對於上述氣體供給緩衝部51,由上部氣體供給部5供給氮氣作為惰性氣體。該上部氣體供給部5例如具備2個流量調整閥等,且構成為能夠將氮氣之流量切換為兩個等級。 擋板部7配置於搬入搬出口33之前表面。擋板部7具有搬入搬出口33、擋板本體57、及致動器59。擋板本體57係藉由作動片於垂直方向進退之致動器59而升降驅動。擋板本體57係於上升時介隔O形環而將搬入搬出口33封閉。若致動器59作動,則擋板本體57移動至圖1之由實線所示之位置而將搬入搬出口33封閉,若致動器59設為非作動,則擋板本體57下降至圖1中由兩點鏈線所示之位置而將搬入搬出口33打開。 腔室排氣部9係經由上述排氣口蓋39而將熱處理空間HS之氣體排出。腔室排氣部9具備複數個開閉閥或流量調整閥、抽氣器等,且藉由來自空氣供給源之空氣供給而將熱處理空間HS排氣。再者,亦可代替抽氣器與空氣供給源等而使用排氣泵等來構成。 支持銷升降部11具備三根支持銷61(圖1中,因圖示之關係而僅表示兩根)、歧管63、機械軸封65、升降構件67、及致動器69。各支持銷61插通於上述各貫通口27。各支持銷61貫通歧管63,且下端部介隔機械軸封65而連結於升降構件67。於歧管63之上表面與底板21之間,以包圍各貫通孔27之方式安裝有O形環。機械軸封65之上端部安裝於歧管63之下表面。機械軸封65係氣密地支持支持銷61之外周面並且容許支持銷61之升降的由金屬構件形成之密封件。歧管63於俯視下呈三角形狀,且於內部形成有一個空間。於歧管63之一部位,形成有與其空間連通之排氣口71。 升降構件67於俯視下呈環狀,且藉由致動器69而升降。致動器69係以作動片於鉛直方向進退之姿勢配置。若致動器69作動,則支持銷61突出並移動至圖1中由兩點鏈線所示之基板W之交接位置,若致動器69設為非作動,則支持銷61移動至圖1中由實線所示之退出位置。於該支持銷61移動至退出位置時,基板W載置於熱處理板23之上表面上。 支持銷密封排氣部15自上述歧管63之排氣口71進行排氣。支持銷密封排氣部15具備複數個開閉閥或流量調整閥、抽氣器等,且藉由來自空氣供給源之空氣供給,而經由歧管63及貫通口27將熱處理空間HS排氣。又,將機械軸封65中產生之塵埃亦同時排出。再者,支持銷密封排氣部15亦可代替抽氣器與空氣供給源等而使用減壓泵等來構成。 藉由支持銷密封排氣部15,而通過形成於熱處理時載置基板W之場所之附近之貫通口27進行排氣,故而可有效率地降低熱處理時之對成膜帶來較大影響之基板W周圍之氧濃度。又,於機械軸封65中因支持銷61之滑動而產生之塵埃不會進入至熱處理空間HS而排出,故而可清潔地處理基板W。 上述上部氣體供給部5、腔室排氣部9、下部氣體供給部13、支持銷密封排氣部15、及致動器59、69係藉由控制部17而總括地控制。控制部17內置有未圖示之CPU(Central Processing Unit,中央處理單元)、記憶體、計時器。控制部17係於未圖示之記憶體預先記憶有規定熱處理之順序之複數個配方。設定部19係由操作員操作者,且選擇複數個配方中之一個,或指示處理之開始,或指示警報發生時之操作。 再者,於本實施例中,於未圖示之記憶體預先記憶有腔室排氣時間、熱處理移行時間、熱處理時間、冷卻時間等,且適當地由控制部17參照。該熱處理移行時間係於下述熱處理中,熱處理空間HS之氧濃度成為目標值以下之自排氣開始時間點起之經過時間。其係於設置有氧濃度感測器49之狀態下藉由實驗預先計測而決定。 其次,參照圖2及圖3,對由上述基板處理裝置進行之熱處理之一例進行說明。再者,圖2係表示實施例之基板之處理例之時序圖,圖3係表示實施例之基板之處理例中之動作之流程圖。此處,圖2之時序圖中之實線表示熱處理空間HS之壓力,虛線表示熱處理空間HS之氧濃度。 再者,作為初始狀態(圖2之0時間點),設為如下狀態:已於表面形成有由誘導自組織化材料構成之處理膜之基板W自搬入搬出口33搬入至熱處理空間HS,並以利用處於交接位置之支持銷61使基板W自熱處理板23之表面離開之狀態待機。然後,致動器59作動,而設為搬入搬出口33由擋板本體57封閉之狀態。再者,熱處理板23已經設定為處理溫度(例如350℃)。 步驟S1 控制部17於0時間點,藉由支持銷密封排氣部15而開始自排氣口71排氣,並且藉由腔室排氣部9而開始自排氣口37排氣。藉此,熱處理空間HS內之氣體開始排氣,於作為腔室排氣時間之t1時間點壓力急速下降至 -p3[kPa]。再者,於作為腔室排氣時間之t1時間點達到-p3[kPa]之條件係進行調整自腔室排氣部9與支持銷密封排氣部15之排氣量之各種實驗而預先決定。又,控制部17與此同時開始計時。藉由該急速排氣,亦具有如下效果,即,使擋板本體57牢固地密接於搬入搬出口33之O形環,而防止空氣自外部侵入至熱處理空間HS。 再者,於0~t1時間點為止,僅藉由排氣而進行氧濃度降低,其相當於本發明中之「排氣步驟」。 步驟S2、S3 控制部17於對作為腔室排氣時間之t1時間點進行計時之時,開始自上部氣體供給部5與下部氣體供給部13供給氮氣。藉此,熱處理空間HS之壓力開始急速地朝大氣壓側恢復,但維持-p1[kPa]附近之負壓。此係藉由使來自上部氣體供給部5與下部氣體供給部13之氮氣之供給量較自腔室排氣部9與支持銷密封排氣部15之排氣量少而進行。於t1至t7時間點為止,藉由排氣與氮氣之供給而進行氧濃度降低。 於t1至t7時間點,使排氣量較氮氣之供給量多而設為負壓,滯留於熱處理腔室3內之角部等之氧較之氮氣之流動而藉由排氣之流動更容易排出。因此,可進一步降低氧濃度。 步驟S4 控制部17於相當於自0時間點起為特定時間後之t7時間點使腔室排氣部9停止,而移行至基於自支持銷密封排氣部15之排氣、及自上部氣體供給部5與下部氣體供給部13供給氮氣之沖洗的氧濃度降低。藉此,熱處理空間HS之壓力偏向大氣壓側,並維持增壓。此時,可使有可能滯留於基板W之下表面與熱處理板23之間之氧亦隨著氮氣之流動而排出。又,雖然有可能氧滯留於處於熱處理板23之周圍之間隙43,但藉由自開口45供給氮氣,而該氧亦可排出。因此,可使熱處理空間HS之氧濃度極低。 步驟S5 控制部17根據計時之時間是否已到達預先設定之熱處理移行時間而使處理分支。於到達熱處理移行時間之情形時,移行至下一步驟S6。另一方面,於未到達熱處理移行時間之情形時,重複步驟S5。於t7~t9時間點為止,停止排氣,僅供給氮氣,藉此,可使t7時間點為止之熱處理空間HS內之流動產生變化。因此,可使滯留於熱處理空間HS內之氧隨著流動之變化而排出,而可進一步降低氧濃度。 再者,上述t1~t9時間點為止相當於本發明中之「惰性氣體供給步驟」。又,上述t1~t7時間點為止相當於本發明中之「第1惰性氣體供給步驟」,t7~t9時間點為止相當於本發明中之「第2惰性氣體供給步驟」。 步驟S6、S7 控制部17於到達熱處理移行時間之情形時,於t9時間點將致動器69設為非作動,使支持銷27下降至退出位置為止。藉此,基板W移動至接近熱處理板23之處理位置而對基板W開始熱處理。控制部17開始計時,並且維持該狀態直至到達熱處理時間之t10時間點為止。再者,於該t9時間點,熱處理空間HS中之氧濃度降低至作為目標值之100 ppm以下為止。 如上所述,不使用氧濃度計49,僅藉由計測熱處理移行時間即可向熱處理移行,故而可簡化基板處理裝置之構成,可抑制處理所需之成本。 步驟S8 控制部17於計時之時間到達熱處理時間時,於t10時間點使致動器69作動而使支持銷27上升。藉此,基板W自熱處理板23離開並移動至交接位置。控制部17使腔室排氣部9作動而開始自排氣口37排氣,進而開始計時。藉此,對基板W實施冷卻處理。 再者,上述t9~t10時間點為止相當於本發明中之「熱處理步驟」。 步驟S9 控制部17根據計時之時間是否已到達冷卻時間而使處理分支。於已到達冷卻時間之情形時,移行至步驟S10,於並非如此之情形時,重複執行步驟S9。 步驟S10 於已到達冷卻時間之情形時,控制部17於t11時間點使腔室排氣部9、上部氣體供給部5、及下部氣體供給部13停止。而且,將致動器59設為非作動,使擋板本體57下降而將基板W搬出。 根據本實施例,首先僅進行排氣而將熱處理空間HS之氣體排氣之後,藉由氮氣供給而將氮氣供給至熱處理空間HS。由於在熱處理空間HS內設為負壓之狀態下供給氮氣,故而與僅供給氮氣或僅進行排氣或同時進行氮氣之供給與排氣之情形相比較,熱處理空間HS內之壓力與氮氣之供給壓力之差變大,因此可將熱處理空間HS內之氣體以短時間置換為氮氣。又,由於可使熱處理空間HS內之氧濃度極低,故而可使熱處理中之熱處理空間HS之處理氣氛適合於熱處理製程,而可適當地進行成膜。尤其是,於在基板W形成有由誘導自組織化材料構成之處理膜之情形時,可使熱處理空間HS之處理氣氛適合於DSA製程,而可使聚合物適當地(相)分離。 <變化例> 於上述實施例中,不使用氧濃度感測器49,對熱處理移行時間進行計時而進行向熱處理之移行。然而,本發明並不限定於此種實施形態。此處,參照圖2及圖4對變化例進行說明。再者,圖4係表示變化例之基板之處理例中之動作之流程圖。 該變化例係於上述基板處理裝置中具備氧濃度感測器49之情形時之處理。於該情形時,將上述處理中之步驟S5省略,新增加步驟S5A與步驟S11、S12作為處理。 於步驟S5A中,控制部17參照來自氧濃度感測器49之氧濃度,並根據其結果使處理分支。於步驟S5A中,於氧濃度到達目標值以下之情形時,移行至步驟S6而移行至熱處理。另一方面,於氧濃度並非目標值以下之情形時,於步驟S11中判定再測定之次數,重複步驟S5A直至進行特定次數(例如,隔5秒左右之待機時間為5次)之再測定為止。於即便如此氧濃度亦未成為目標值以下之情形時,移行至步驟S12而發出警報,通知裝置操作員。 根據該變化例,僅於藉由氧濃度測定能夠確認氧濃度實際為目標值以下之情形時,實施熱處理,故而可對基板W進行確實之處理。又,於氧濃度未到達目標值之情形時,發出警報,故而可阻止移行至熱處理,而防止不適當之處理於未然。 再者,亦可將上述步驟S12省略,不發出警報且不進行熱處理而將基板W搬出。 本發明並不限定於上述實施形態,可如下述般實施變化。 (1)於上述實施例中,設為基板W覆著有由誘導自組織化材料構成之處理膜者進行了說明,但本發明並不限定於此種基板W。例如,即便為熱處理空間HS中之氧濃度帶來不良影響之處理、例如對塗佈有SOG(Spin On Glass)溶液等之基板之處理,亦可應用。 (2)於上述實施例中,於排氣步驟中使支持銷密封排氣部15連續地動作,但亦可使其與腔室排氣部9連動地動作。藉此,可容易地進行排氣之時序控制。 (3)於上述實施例中,由進行排氣與氮氣之供給之第1惰性氣體供給步驟與僅供給氮氣之第2惰性氣體供給步驟之兩個步驟構成排氣步驟。然而,本發明並不限定於此種形態,亦可利用進行排氣與氮氣供給之一個步驟實施排氣步驟。藉此,可簡化切換供給或排氣之控制。 (4)於上述實施例中,於最初僅進行排氣時,對0~t1時間點之時間即腔室排氣時間進行計時,但亦可基於壓力感測器47之計測值而決定氮氣供給之時序。藉此,可進行確實之處理。 (5)於上述實施例中,作為惰性氣體以氮氣為例進行了說明,但例如,亦可使用氬或氦等其他惰性氣體。 ※本發明可不脫離其思想或本質而以其他具體之形式實施,因此,作為表示發明之範圍者,應參照附加之申請專利範圍而並非以上之說明。
1‧‧‧熱處理板部3‧‧‧熱處理腔室5‧‧‧上部氣體供給部7‧‧‧擋板部9‧‧‧腔室排氣部11‧‧‧支持銷升降部13‧‧‧下部氣體供給部15‧‧‧支持銷密封排氣部17‧‧‧控制部19‧‧‧設定部21‧‧‧底板23‧‧‧熱處理板25‧‧‧加熱器27‧‧‧貫通口29‧‧‧板上表面供給口31‧‧‧蓋部33‧‧‧搬入搬出口35‧‧‧冷卻管37‧‧‧排氣口39‧‧‧排氣口蓋41‧‧‧貫通口43‧‧‧間隙45‧‧‧開口47‧‧‧壓力感測器49‧‧‧氧濃度感測器51‧‧‧氣體供給緩衝部57‧‧‧擋板本體59‧‧‧致動器61‧‧‧支持銷63‧‧‧歧管65‧‧‧機械軸封67‧‧‧升降構件69‧‧‧致動器71‧‧‧排氣口HS‧‧‧熱處理空間W‧‧‧基板
※為了說明發明而圖示目前認為較佳之若干形態,但請理解發明並不限定於如圖所示之構成及對策。 圖1係表示實施例之基板處理裝置之整體構成之概略構成圖。 圖2係表示實施例之基板之處理例之時序圖。 圖3係表示實施例之基板之處理例中之動作之流程圖。 圖4係表示變化例之基板之處理例中之動作之流程圖。
Claims (10)
- 一種基板處理方法,其將形成有處理膜之基板載置於熱處理腔室內之熱處理空間進行熱處理,且上述方法包含以下步驟:排氣步驟,其將上述熱處理空間之氣體排氣;惰性氣體供給步驟,其對上述熱處理空間供給惰性氣體;及熱處理步驟,其對上述熱處理空間之基板進行熱處理,上述惰性氣體供給步驟包括緊接於上述排氣步驟之後之第1惰性氣體供給步驟及緊接於上述熱處理步驟之前之第2惰性氣體供給步驟,上述第1惰性氣體供給步驟維持上述排氣步驟中之排氣,並且為儘量將上述熱處理腔室內維持為負壓之惰性氣體之供給量,且上述第2惰性氣體供給步驟使上述排氣步驟中之排氣停止,對上述熱處理腔室內僅供給惰性氣體。
- 如請求項1之基板處理方法,其中於預先測定自使上述熱處理空間之氧濃度成為目標值以下之上述排氣步驟起之經過時間,並將上述經過時間設為熱處理移行時間之情形時,於自上述排氣步驟起經過上述熱處理移行時間之時間點移行至上述熱處理步驟。
- 如請求項1之基板處理方法,其中於上述熱處理步驟之前,實施測定上述熱處理空間之氧濃度之氧濃度測定步驟,且 僅於上述氧濃度為目標值以下之情形時,實施上述熱處理步驟。
- 如請求項3之基板處理方法,其中於上述氧濃度測定步驟之上述氧濃度未到達目標值以下之情形時,發出警報。
- 如請求項1之基板處理方法,其中上述排氣步驟係自形成於上述熱處理腔室之側方且相當於上述熱處理空間之縱截面面積之流路截面面積之排氣口將氣體排氣。
- 如請求項2之基板處理方法,其中上述排氣步驟係自形成於上述熱處理腔室之側方且相當於上述熱處理空間之縱截面面積之流路截面面積之排氣口將氣體排氣。
- 如請求項3之基板處理方法,其中上述排氣步驟係自形成於上述熱處理腔室之側方且相當於上述熱處理空間之縱截面面積之流路截面面積之排氣口將氣體排氣。
- 如請求項4之基板處理方法,其中上述排氣步驟係自形成於上述熱處理腔室之側方且相當於上述熱處理空間之縱截面面積之流路截面面積之排氣口將氣體排氣。
- 如請求項1之基板處理方法,其中 上述排氣步驟係通過供於載置基板之熱處理板進退之支持銷插通、且連通於上述熱處理空間之貫通口將氣體排氣。
- 如請求項1之基板處理方法,其中上述基板形成有由誘導自組織化材料構成之處理膜。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013146118A1 (ja) * | 2012-03-26 | 2013-10-03 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
US20130259457A1 (en) * | 2012-03-27 | 2013-10-03 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3909953A (en) * | 1974-02-28 | 1975-10-07 | Midland Ross Corp | Paint drying method and apparatus |
JP3630563B2 (ja) | 1998-07-23 | 2005-03-16 | 大日本スクリーン製造株式会社 | 基板熱処理方法およびその装置 |
JP4051358B2 (ja) | 1999-05-24 | 2008-02-20 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2001110793A (ja) * | 1999-10-12 | 2001-04-20 | Dainippon Screen Mfg Co Ltd | 熱処理装置および基板処理装置 |
JP3741604B2 (ja) | 2000-11-27 | 2006-02-01 | 東京エレクトロン株式会社 | 熱処理装置および熱処理方法 |
JP3494435B2 (ja) * | 2001-02-27 | 2004-02-09 | 東京エレクトロン株式会社 | 基板処理装置 |
US20040058560A1 (en) * | 2002-09-20 | 2004-03-25 | Applied Materials, Inc. | Fast gas exchange for thermal conductivity modulation |
JP3942602B2 (ja) * | 2004-03-26 | 2007-07-11 | 株式会社Sokudo | 基板熱処理方法およびその装置 |
US6928878B1 (en) * | 2004-09-28 | 2005-08-16 | Rosemount Aerospace Inc. | Pressure sensor |
US8884382B2 (en) * | 2007-07-17 | 2014-11-11 | Kwj Engineering, Inc. | Multi-Dimensional sensors and sensing systems |
JP5890255B2 (ja) * | 2012-04-02 | 2016-03-22 | 株式会社Screenセミコンダクターソリューションズ | 露光装置、基板処理装置、基板の露光方法および基板処理方法 |
JP6239813B2 (ja) * | 2012-07-18 | 2017-11-29 | 株式会社Screenセミコンダクターソリューションズ | 基板処理装置および基板処理方法 |
JP6141144B2 (ja) * | 2012-10-02 | 2017-06-07 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
US9209014B2 (en) * | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
JP6230809B2 (ja) * | 2013-04-22 | 2017-11-15 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US8945408B2 (en) * | 2013-06-14 | 2015-02-03 | Tokyo Electron Limited | Etch process for reducing directed self assembly pattern defectivity |
JP6294761B2 (ja) * | 2013-07-11 | 2018-03-14 | 東京エレクトロン株式会社 | 熱処理装置及び成膜システム |
JP2016058585A (ja) * | 2014-09-10 | 2016-04-21 | 株式会社東芝 | パターン形成方法 |
KR20160113410A (ko) * | 2015-03-19 | 2016-09-29 | 피에스케이 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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