TWI683796B - 陶瓷探針導引構件、探針卡及封裝檢查用插座 - Google Patents

陶瓷探針導引構件、探針卡及封裝檢查用插座 Download PDF

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TWI683796B
TWI683796B TW107137022A TW107137022A TWI683796B TW I683796 B TWI683796 B TW I683796B TW 107137022 A TW107137022 A TW 107137022A TW 107137022 A TW107137022 A TW 107137022A TW I683796 B TWI683796 B TW I683796B
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probe
ceramic
probe card
guide member
volume resistivity
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TW107137022A
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TW201922673A (zh
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山岸航
森一政
衛藤俊一
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日商飛羅得陶瓷股份有限公司
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    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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Abstract

本發明係一種由質量%、BN：20.0~55.0%、SiC：5.0 ~40.0%、ZrO2 及/或Si3 N4 ：3.0~60.0%所構成之陶瓷。該陶瓷，由於在-50~500℃之熱膨脹係數為1.0×10-6 ~5.0×10-6 /℃，且低帶電性(體積電阻率為106 ~1014 Ω･cm)及快削性佳，所以，例如，適於用在導引探針卡的探針之探針導引構件、封裝檢查用插座等。

Description

陶瓷探針導引構件、探針卡及封裝檢查用插座
本發明係有關陶瓷探針導引構件、探針卡及封裝檢查用插座。
在製造電子構件等精密機器之製程，為了抑制因靜電放電致使製造物的損傷、發生不良等，還有，為了防止環境中浮游的微粒吸附靜電，而使用實施防靜電措施的低帶電性材料。
例如，在IC晶片的檢查製程，使用探針卡。圖1，係例示探針卡的構成之剖面圖；圖2，係例示探針卡的構成之俯視圖。如圖1所示，探針卡10，係具備針狀的探針11、與具有供各探針11插通用的複數貫通孔12a的探針卡(探針導引構件)12之檢查治具。於是，IC晶片14之檢查，係藉由使複數探針11與被形成在矽晶圓13上之IC晶片14接觸而被執行。此時，在探針卡12，係使用實施防止靜電措施的低帶電性材料。
作為一般的低帶電性材料，廣泛使用體積電阻率為106 ~1012 Ω･cm程度的材料，例如，添加導電性填充物之樹脂(專利文獻1、2等)、分散燒結導電性陶瓷之陶瓷燒結體(專利文獻3~5等)等。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2005-226031號公報 [專利文獻2]國際公開第2002/082592號公報 [專利文獻3]日本特開2013-136503號公報 [專利文獻4]日本特開2008-094688號公報 [專利文獻5]日本特開2006-199586號公報
[發明所欲解決之課題]
隨著近年來裝置的細微化或高性能化，在用於製造該等的裝置之對抗靜電材，不僅是低帶電性，且要求提高快削性、耐熱性、機械特性、熱膨脹率等各種性能。
例如，IC晶片檢查製程之檢查效率，係取決於可以同時與IC晶片接觸之探針的數量。因此，近年，利用MEMS(Micro Electro Mechanical Systems)，將數萬個微小的探針高密度地立設之探針卡愈來愈實用化。如圖2所示，在探針卡12，必須在對應於探針卡10的各探針11之位置設置貫通孔12a。探針卡10的探針11之設置位置或形狀等，係根據其檢查裝置之規格而改變，因應於此，貫通孔12a之設置位置或形狀等也會有所不同。例如，探針11為針狀之場合，作為貫通孔12a則採用圓形孔。孔的內徑或孔的間距也是根據探針11的種類或配置，例如，有以間距60μm(貫通孔間的壁厚為10μm左右)設置直徑50μm的貫通孔之場合。由於必須設置數萬個這類的小的貫通孔，所以快削性是必要的。
對於探針卡，為了在不同的溫度環境下進行檢查，而被要求耐熱性佳。對於探針卡，也要求與矽晶圓同程度的熱膨脹率。對於探針卡，為了耐受檢查時的接觸等，也被要求機械的特性佳。以上，主要說明了探針卡，而作為要求優良的低帶電性、與快削性之用途，有封裝檢查用插座等之檢查用插座。
在此，專利文獻1及2所記載之添加導電性填充物之樹脂之場合，因為剛性或耐熱性(使用溫度)低，所以在用作檢查治具之場合下探針數(耐荷重)或檢查溫度區間受到限制。此外，這類的樹脂，由於低熱傳導率且高熱膨脹率，使素材因加工中的熱而膨脹，而可能在加工後無法得到所期待的尺寸精確度。
另一方面，以Al2 O3 為主相之陶瓷(專利文獻3)、以ZrO2 為主相之陶瓷(專利文獻4及5)之場合，雖低帶電性佳，但是由於硬度太高，使細微加工，特別是利用機械加工的切削困難。因此，例如，在使用這些材料製作探針卡之場合，問題在於製造時間可能極端地長期化。
本發明之目的係提供一種低帶電性(體積電阻率為106 ~1014 Ω･cm)及快削性佳之陶瓷，使用此陶瓷之探針導引構件、探針卡及檢查用插座。 [供解決課題之手段]
本案發明人等為了達成上述目的一再銳意研究之結果，得到下述的見解。 (a)本案發明人等，首先，在檢討用以提升陶瓷燒結體的快削性之主相之後可知，在以Al2 O3 作為主相之陶瓷、以ZrO2 作為主相之陶瓷之場合，由於硬度過高，而使細微加工困難，相對地，以BN作為主相之陶瓷燒結體，則具有良好的快削性。因而，陶瓷之主相以BN為佳。 (b)但是，BN，由於體積電阻率為1015 Ω･cm等級過高，所以在檢查製程在繼續使用時會蓄積電荷。由於無法緩慢釋放出蓄積的電荷，而引起靜電放電。結果，導致電流瞬間地流到檢查對象物，在某些場合下發生檢查對象物破損之問題。因而，為了將陶瓷燒結體的體積電阻率控制在106 ~1014 Ω･cm之範圍並賦予低帶電性，使陶瓷燒結體的母材分散103 Ω･cm以下程度的粒子是有效果的。作為該分散粒子，特別是，SiC、WC、C、TiN、TiO2 等。但是，在WC、C、TiN、TiO2 之場合，其單體的體積電阻率比SiC低。因而，在以BN作為主相之陶瓷分散適量的SiC為佳。 (c)因為僅僅在以BN作為主相之陶瓷分散適量的SiC，存在機械特性差之場合，而將ZrO2 及/或Si3 N4 、與SiC一起分散是有效果的。 (d)在快削性與機械特性並存上，最好是緻密的陶瓷燒結體。因此，採用於加壓氛圍下進行燒成之、熱壓燒成法來製作為佳。
本發明係根據上述的見解而作成者，並以下述的發明為要旨。
(1)由質量%、 BN：20.0~55.0%、 SiC：5.0~40.0%、 ZrO2 及/或Si3 N4 ：3.0~60.0%所構成之陶瓷。
(2)上述(1)之陶瓷，在-50~500℃之熱膨脹係數為1.0×10-6 ~5.0×10-6 /℃。
(3)上述(1)或(2)之陶瓷，體積電阻率係 106 ~1014 Ω･cm。
(4)上述(1)~(3)任一項之陶瓷，吸水率為 0.5%以下。
(5)導引探針卡的探針之探針導引構件，具備使用上述(1)~(4)任一項之陶瓷之板狀本體部、與在前述本體部、插通前述探針之複數貫通孔及/或狹縫之探針導引構件。
(6)具備複數探針、與上述(5)之探針導引構件之探針卡。
(7)使用上述(1)~(4)任一項之陶瓷之封裝檢查用插座。 [發明之效果]
根據本發明，由於可以得到低帶電性(體積電阻率為106 ~1014 Ω･cm)及快削性佳之陶瓷，所以特別有助於作為探針導引構件、探針卡及檢查用插座。
1.陶瓷 關於本發明之陶瓷，係由質量%、BN：20.0~55.0%、SiC：5.0~40.0%、ZrO2 及/或Si3 N4 ：3.0~60.0%所構成。以下，針對含有量之「%」係意味「質量%」。
BN：20.0~55.0% 關於本發明之陶瓷，要求是能以超硬工具加工的程度之快削性材料，因而為了賦予陶瓷良好的快削性，作為必須的成分含有20.0%以上的BN。但是，當BN的含有量超過55.0%時，材料強度降低，可能發生貫通孔加工時貫通孔間的壁崩壞之問題。因而，BN的含有量，設定在20.0~55.0%。下限以25.0%為佳，30.0%為更佳。上限以50.0%為佳，45.0%為更佳。
又，BN存在六方晶系BN(h-BN)、與立方晶系BN(c-BN)，由於c-BN係高硬度，所以使用h-BN為佳。BN的粒徑並未特別限制，但由於過大時可能發生材料強度降低，所以平均粒徑最好是未滿5μm。
SiC：5.0~40.0% SiC，係為了將陶瓷的體積電阻率控制在106 ~1014 Ω･cm的範圍之必須成分。因而，設定SiC的含有量為5.0%以上。但是，當SiC的含有量超過40.0%時，問題在不僅導致體積電阻率變成低於106 Ω･cm的不適合作為低帶電性材料的體積電阻率，且材料硬度太高、損害快削性。因而，SiC的含有量，設定在5.0~40.0%。下限為10.0%佳，15.0%更佳。上限為35.0%佳，30.0%更佳。
又，SiC的粒徑並未特別限制，但由於過大時體積電阻率的差異變大，所以平均粒徑最好是未滿2.0μm。此外，最好是在以BN為主體的陶瓷中以分散狀態存在。分散狀態，係可以藉由利用EDX(Energy dispersive X-ray spectrometry)，進行Si的元素分析來確認。
ZrO2 及/或Si3 N4 ：3.0~60.0% ZrO2 及Si3 N4 ，都是為了提升陶瓷的機械特性的必須成分。因而，將ZrO2 及/或Si3 N4 的含有量設在3.0%以上。但是，當ZrO2 及/或Si3 N4 的含有量超過60.0%時，硬度升高太多，使快削性劣化，且變得無法高精確度地形成細微孔。因而，ZrO2 及/或Si3 N4 的含有量係設在3.0~60.0%。下限為5.0%佳，10.0%更佳。上限為55.0%佳，50.0%更佳。因而，包含ZrO2 及Si3 N4 雙方之場合，設合計的含有量在3.0~60.0%。
又，ZrO2 及/或Si3 N4 的粒徑並未特別限制，但由於過大時機械上特性的差異增加，所以平均粒徑最好是未滿2μm。此外，最好是在以BN為主體的陶瓷中以分散狀態存在。分散狀態，係可以利用根據EDX的元素分析來確認。
在關於本發明之陶瓷，上述的各成份之外，為了得到緻密的陶瓷也包含必要的燒結助劑。作為燒結助劑，例如，可列舉氧化鋁(alumina、Al2 O3 )、氧化鎂(magnesia、MgO)、氧化釔(yttria、Y2 O3 )、及從鑭系元素金屬的氧化物及尖晶石等複合氧化物選擇出的1種以上。這些之中最好是氧化鋁與氧化釔的混合物，或者是進而含有氧化鎂的混合物。
燒結助劑的含有量並未特別限制，但最好是設在1.0~15.0%。當配合量太少時會使燒結不充分，降低燒結體之陶瓷的強度。另一方面，配合量過多時，由強度低的玻璃或結晶等所構成的粒界相增加，還是會招致陶瓷的強度降低。再者，粒界相因為體積電阻率高，配合量過多時可能致使陶瓷的體積電阻率增加、對低帶電性帶來不良影響。燒結助劑的含有量，設為3.0%以上佳，5.0%以上更佳。此外，燒結助劑的含有量，設為12.0%以下佳，10.0%以下更佳。
又，各成分的含有量(質量%)，係可以利用ICP發光分光分析法予以測定。
在-50~500℃之熱膨脹係數：1.0×10-6 ~ 5.0×10-6 /℃ 在將關於本發明之陶瓷用於探針導件之場合，要求是與搭載各IC晶片的矽晶圓的熱膨脹係數同程度。這是因為，在檢查時的溫度改變時，IC晶片的位置會隨著矽晶圓的熱膨脹而變動。此時，探針導件如具有與矽晶圓同程度的熱膨脹係數，則可以同步於矽晶圓的膨脹、收縮而移動，而維持高精確度的檢查的緣故。此點，在關於本發明的陶瓷被用於檢查用插座之場合也是一樣。因而，在-50~ 500℃之熱膨脹係數，係以1.0×10-6 ~5.0×10-6 /℃作為基準。
體積電阻率：106 ~1014 Ω･cm 關於本發明之陶瓷，其特徵係具有低帶電性，且以體積電阻率106 ~1014 Ω･cm作為基準。
吸水率：0.5%以下 關於本發明之陶瓷，為了獲得必要的機械特性需要緻密。由於氣孔殘留多時無法得到充分的機械特性，所以以吸水率0.5%以下作為基準。
彎曲強度：200MPa以上 關於本發明之陶瓷，在使用於探針導件時，要求具有足夠的機械特性以耐受檢查時與探針等之接觸或荷重。此點，在關於本發明的陶瓷被用於檢查用插座之場合也是一樣。因此，彎曲強度，以在200MPa以上作為基準。
快削性 快削性，係利用由超硬微鑽頭的切削加工，將以間距60μm設置1000個(8個×125列)直徑50μm及直徑100μm的貫通孔時之加工精確度、用影相測定機(例如日本Mitutoyo(股)公司製Quick Vision)觀察而予以評價。此時，加工精確度在±3.0μm以下之場合下判斷為快削性良好。
2.陶瓷的製造方法 以下，說明關於本發明之陶瓷之製造方法例。
將BN、SiC、以及ZrO2 及/或Si3 N4 的粉末與燒結助劑一起、以球磨機等公知的方法加以混合。亦即，於容器內將各粉末、與溶媒、陶瓷製或加入鐵心的樹脂製球一起混合而泥漿化。此時，在溶媒可以使用水或醇類。再者，必要時也可以使用分散劑或結合劑等添加物。
將得到的泥漿以噴霧乾燥装置或減壓蒸發器等公知的方法進行造粒。亦即，用噴霧乾燥装置予以噴霧乾燥後顆粒化，或者，用減壓蒸發器予以乾燥後粉末化。
將得到的粉末於高溫高壓下、以例如熱壓或HIP(熱等靜壓法)等公知的方法予以燒結，得到陶瓷燒結體。熱壓之場合，可以於氮氛圍或加壓氮中予以燒成。此外，燒成溫度可以在1400~1900℃的範圍。溫度太低時則燒結不充分，而過高時可能發生氧化物成分溶出等之問題。
加壓力的適當範圍係15~50MPa。此外，加壓力持續時間根據溫度或尺寸通常為1~4小時程度。此外，在HIP之場合，也是酌情設定溫度或加壓力等燒成條件。還有，也可以採用常壓燒成法或氛圍加壓燒成法等公知的燒成方法。 [實施例]
為了確認本發明之效果，將改變配合比之、BN(h-BN)、SiC、以及ZrO2 及/或Si3 N4 之粉末，與燒結助劑(氧化鋁與氧化釔的混合物，或進而含有氧化鎂的混合物)、水、分散劑、樹脂、陶瓷製的球一起混合，且將得到的泥漿用噴霧乾燥裝置予以噴霧乾燥後形成顆粒狀。將得到的顆粒充填到石墨製的擠壓模(模具)，於氮氛圍中邊施加30MPa的壓力邊以1700℃進行2小時熱壓燒成，得到縱150×橫150×厚度30mm的試驗材。
供參考，而以市售的添加碳纖維的樹脂(比較例8)、市售的以Al2 O3 為主相的陶瓷(比較例9)、市售的以ZrO2 為主相的陶瓷(比較例10)作為試驗材加以準備。
從得到的試驗材採取試驗片，進行各種試驗。
＜體積電阻率＞ 根據JIS C2141求出上述試驗材的體積電阻率。
＜熱膨脹率＞ 根據JIS R1618求出上述試驗材在-50~500℃之熱膨脹係數。
＜吸水率＞ 根據JIS C2141求出上述試驗材的吸水率。
＜彎曲強度＞ 根據JIS R1601求出上述試驗材的三點彎曲強度。
＜快削性＞ 快削性，係利用由超硬微鑽頭的切削加工，將以間距60μm設置1000個(8個×125列)直徑50μm及直徑100μm的貫通孔時之加工精確度(將加工性精確度在±3.0μm以下之場合判斷為良好)、利用目視觀察予以評價。此時，在加工精確度±3.0μm以下之場合判斷快削性為良好、且設定為「○」，將加工精確度超過±3.0μm之場合設定為「△」，將鑽頭折斷等、而開孔加工本身無法進行之場合設為「×」，並記入表1。
Figure 02_image001
圖3係顯示實施例1的細微化試驗後之照片；圖4係比較例6的細微化試驗後之照片。
如表1所示，比較例1~3係以BN為主相、且包含ZrO2 及/或Si3 N4 之例，由於SiC少、或不包含，所以體積電阻率變得過高。比較例4，由於BN太少，硬質的SiC過多的緣故，而在細微加工試驗，導致快削性劣化。比較例5、6係包含C、而非SiC，比較例5之體積電阻率過高，比較例6之快削性劣化。比較例7係以Si3 N4 為主相、且包含TiO2 之例，體積電阻率過高，而且快削性也劣化了。比較例8~10，都快削性劣化了。
相對於此，實施例1~16，體積電阻率及快削性都良好。實施例16，雖滿足了要求的性能，但吸水率高達0.8，彎曲強度若干劣化。此外，如圖3及圖4所示，於比較例6，在切削加工時在貫通孔之間的壁發生崩塌，而於實施例1，並沒發生此類之崩塌，可以高精確度地形成貫通孔。 [產業上利用可能性]
根據本發明，由於可以得到低帶電性(體積電阻率為106 ~1014 Ω･cm)及快削性佳之陶瓷，所以特別有助於作為探針導引構件、探針卡及檢查用插座。
10‧‧‧探針卡 11‧‧‧探針 12‧‧‧探針卡 12a‧‧‧貫通孔 13‧‧‧矽晶圓 14‧‧‧IC晶片
[圖1]圖1係例示探針卡的構成之剖面圖。 [圖2]圖2係例示探針卡的構成之俯視圖。 [圖3]圖3係實施例1的細微化試驗後之照片。 [圖4]圖4係比較例6的細微化試驗後之照片。
10‧‧‧探針卡
11‧‧‧探針
12‧‧‧探針卡
12a‧‧‧貫通孔
13‧‧‧矽晶圓
14‧‧‧IC晶片

Claims (6)

  1. 一種陶瓷，其特徵係由以質量%計BN：20.0~55.0%、SiC：5.0~40.0%、ZrO2及/或Si3N4：3.0~60.0%所構成；吸水率係0.5%以下。
  2. 如申請專利範圍第1項記載之陶瓷，其中在-50~500℃之熱膨脹係數為1.0×10-6~5.0×10-6/℃。
  3. 如申請專利範圍第1或2項記載之陶瓷，其中體積電阻率係106~1014Ω．cm。
  4. 一種探針導引構件，導引探針卡的探針之探針導引構件，其特徵係具備使用申請專利範圍第1至3項任一項記載之陶瓷之板狀本體部，與在前述本體部、插通前述探針之複數貫通孔及/或狹縫。
  5. 一種探針卡，其特徵係具備複數探針、與申請專利範圍第4項記載之探針導引構件。
  6. 一種封裝檢查用插座，其特徵係使用申請專利範圍第1至3項任一項記載之陶瓷。
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