TWI682234B - 相移空白罩幕以及相移光罩 - Google Patents

相移空白罩幕以及相移光罩 Download PDF

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Publication number
TWI682234B
TWI682234B TW107116686A TW107116686A TWI682234B TW I682234 B TWI682234 B TW I682234B TW 107116686 A TW107116686 A TW 107116686A TW 107116686 A TW107116686 A TW 107116686A TW I682234 B TWI682234 B TW I682234B
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TW
Taiwan
Prior art keywords
phase shift
film
item
patent application
blank mask
Prior art date
Application number
TW107116686A
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English (en)
Chinese (zh)
Other versions
TW201901283A (zh
Inventor
南基守
申澈
李鍾華
梁澈圭
金昌俊
申昇協
公拮寓
Original Assignee
南韓商S&S技術股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 南韓商S&S技術股份有限公司 filed Critical 南韓商S&S技術股份有限公司
Publication of TW201901283A publication Critical patent/TW201901283A/zh
Application granted granted Critical
Publication of TWI682234B publication Critical patent/TWI682234B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW107116686A 2016-10-13 2018-05-16 相移空白罩幕以及相移光罩 TWI682234B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
KR20160132807 2016-10-13
KR1020170061699A KR20180041042A (ko) 2016-10-13 2017-05-18 위상반전 블랭크 마스크 및 포토마스크
??10-2017-0061699 2017-05-18
KR10-2017-0061699 2017-05-18
KR1020180048241A KR101934860B1 (ko) 2016-10-13 2018-04-26 위상반전 블랭크 마스크 및 포토마스크
KR10-2018-0048241 2018-04-26
??10-2018-0048241 2018-04-26

Publications (2)

Publication Number Publication Date
TW201901283A TW201901283A (zh) 2019-01-01
TWI682234B true TWI682234B (zh) 2020-01-11

Family

ID=62089245

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107116686A TWI682234B (zh) 2016-10-13 2018-05-16 相移空白罩幕以及相移光罩

Country Status (2)

Country Link
KR (2) KR20180041042A (ko)
TW (1) TWI682234B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190132151A (ko) * 2018-05-18 2019-11-27 에스케이하이닉스 주식회사 블랭크 위상반전 포토마스크 및 이를 이용한 위상반전 포토마스크와 그 제조방법
JP6927177B2 (ja) * 2018-09-26 2021-08-25 信越化学工業株式会社 位相シフト型フォトマスクブランク及び位相シフト型フォトマスク
WO2021059890A1 (ja) * 2019-09-25 2021-04-01 Hoya株式会社 マスクブランク、位相シフトマスク及び半導体デバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009123167A1 (ja) * 2008-03-31 2009-10-08 Hoya株式会社 フォトマスクブランクおよびその製造方法
TW201007347A (en) * 2008-06-25 2010-02-16 Hoya Corp Phase shift mask blank and phase shift mask
CN104160335A (zh) * 2012-05-14 2014-11-19 株式会社S&S技术 空白罩幕、光罩以及其制造方法
TW201635008A (zh) * 2015-03-24 2016-10-01 Hoya Corp 光罩基底、相移光罩、相移光罩之製造方法及半導體裝置之製造方法
TW201704843A (zh) * 2015-07-24 2017-02-01 Ｓ＆Ｓ技術股份有限公司 空白罩幕及利用其製備的光罩

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
KR101624995B1 (ko) * 2014-09-26 2016-05-26 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상 반전 블랭크 마스크 및 포토마스크
KR101772949B1 (ko) * 2015-08-17 2017-08-31 주식회사 에스앤에스텍 위상반전 블랭크 마스크 및 포토마스크

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009123167A1 (ja) * 2008-03-31 2009-10-08 Hoya株式会社 フォトマスクブランクおよびその製造方法
TW201007347A (en) * 2008-06-25 2010-02-16 Hoya Corp Phase shift mask blank and phase shift mask
CN104160335A (zh) * 2012-05-14 2014-11-19 株式会社S&S技术 空白罩幕、光罩以及其制造方法
TW201635008A (zh) * 2015-03-24 2016-10-01 Hoya Corp 光罩基底、相移光罩、相移光罩之製造方法及半導體裝置之製造方法
TW201704843A (zh) * 2015-07-24 2017-02-01 Ｓ＆Ｓ技術股份有限公司 空白罩幕及利用其製備的光罩

Also Published As

Publication number Publication date
KR20180127190A (ko) 2018-11-28
TW201901283A (zh) 2019-01-01
KR101934860B1 (ko) 2019-04-05
KR20180041042A (ko) 2018-04-23

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