TWI682164B - Substrate monitoring apparatus and substrate monitoring method - Google Patents

Abstract

The substrate monitoring device of the present invention includes: an imaging unit (27) having a specified imaging range; an arrangement unit (26a) which arranges the substrate (S) within the imaging range; an irradiation unit (29) which is used to By irradiating laser light (L) to the substrate (Sc(Se1)) arranged in the imaging range, at least one of reflected light and scattered light of the laser light is generated at the end of the substrate (So(Se1)), and the end (Se1) The image is formed on the light-receiving surface of the imaging unit (27); and the monitoring unit monitors the imaging results of the imaging unit (27).

Description

Substrate monitoring device and substrate monitoring method

The invention relates to a substrate monitoring device and a substrate monitoring method for monitoring a substrate.

In the manufacturing process of the flat panel display, a substrate monitoring device is used to detect cracks or nicks on the substrate on which the elements and wiring are formed. The substrate monitoring device includes: an irradiating portion that irradiates laser light toward the substrate from above the substrate; and an imaging portion opposed to the irradiating portion; the irradiating portion and the imaging portion are provided sandwiching the substrate. The imaging unit receives the transmitted light passing through the substrate and the non-transmitted light that does not pass through the substrate and reaches the imaging unit, and the substrate monitoring device detects a crack or a notch on the substrate based on the difference in intensity between the transmitted light and the non-transmitted light (for example, Patent Document 1).

【Prior Technical Literature】 【Patent Literature】

[Patent Document 1] Japanese Patent Laid-Open No. 2011-149800

However, in order to detect cracks or gaps in the substrate, the imaging unit must receive both transmitted light and non-transmitted light. If one imaging unit is provided on the optical path of transmitted light and the optical path of non-transmitted light, then The location of the camera department is greatly restricted.

An object of the present invention is to provide a substrate monitoring device and a substrate monitoring method that can increase the degree of freedom of the position of the imaging unit to the position of the irradiation unit.

The substrate monitoring device for solving the above-mentioned problems includes: an imaging unit having a light-receiving surface that receives light from a specified imaging range; an arrangement unit configured to arrange the substrate within the imaging range; an irradiation unit configured by The substrate within the imaging range is irradiated with laser light, at least one of reflected light and scattered light of the laser light is generated at the end of the substrate, and the end image is formed on the light-receiving surface as an imaging result; And a monitoring unit that monitors the aforementioned imaging results.

The substrate monitoring method for solving the above-mentioned problems includes an irradiation step of irradiating laser light to a substrate arranged in an imaging range of the imaging unit to generate reflected light and scattered light of the laser light at the end of the substrate At least one of the end portion images is formed on the light-receiving surface of the imaging portion as an imaging result; an imaging step that photographs the end portion; and a monitoring step that monitors the imaging result.

With the above configuration, since the position of the imaging unit only needs to be a position where an image is formed on the light-receiving surface of the imaging unit by at least one of reflected light and scattered light of laser light at the end of the substrate, the location of the imaging unit The position of the irradiation unit is not limited to one position. Therefore, the degree of freedom of the position of the imaging unit to the position of the irradiation unit can be increased.

In the above substrate monitoring device, the irradiation unit is configured to irradiate the substrate with the laser light, transmit the laser light through the substrate, and scatter the laser light at the end.

When using the above substrate monitoring device, the laser light irradiated on the substrate is transmitted through the substrate Scattered inside the plate and at the ends. Therefore, the brightness of the portion other than the portion irradiated by the laser light in the end portion of the substrate can be improved.

In the above-mentioned substrate monitoring device, the irradiating part irradiates the substrate with the laser light, reflects the laser light through the substrate, and scatters the laser light at the end Way composition.

When the above substrate monitoring device is adopted, since the laser light is reflected in the substrate and passes through the interior of the substrate to reach the end of the substrate, the image of the end of the substrate can be formed on the light receiving surface of the imaging unit.

In the above substrate monitoring device, the end portion of the substrate includes the end surface of the substrate, and the irradiating portion irradiates the end surface with the laser light, introduces the laser light from the end surface into the substrate, and from the end In the end surface, the laser beam is irradiated toward a position different from that of the imaging unit in such a manner that the laser beam is derived at a location different from the location where the laser beam is introduced.

In the above substrate monitoring method, the end portion of the substrate includes the end surface of the substrate, and in the irradiation step, the laser light is introduced to the end surface by irradiating the laser light to the end surface, and from the end surface The method of deriving the laser ray at a location different from the location where the laser ray is introduced illuminates the laser ray provided with an optical axis at a different position from the imaging unit.

With the above configuration, in the image captured by the imaging unit, the brightness of the end surface of the substrate is higher than the brightness of the portion other than the end surface of the substrate, and the brightness of the arrangement portion of the substrate is maintained. In addition, the illuminating unit only needs to be configured to irradiate laser light toward a position different from the imaging unit, so it can be monitored according to the brightness of the end surface of the substrate in a state where the degree of freedom of the position of the imaging unit to the position of the illuminating unit is high The state of the end face.

In the above substrate monitoring device, the irradiation unit is a point light source.

In the above substrate monitoring method, the irradiating part irradiating the laser light is a point light source.

With the above configuration, since the irradiating part is a point light source, as long as the amount of laser light output from the irradiating part is the same, the amount of light per unit area at the laser beam irradiation part on the end surface of the substrate is larger than that of the linear light source. Therefore, the amount of light introduced into the substrate is larger than the amount of light emitted when the substrate is led out. As a result, the difference between the brightness of the end face of the substrate and the brightness of other parts of the substrate and the brightness of the arrangement portion becomes larger.

In the above substrate monitoring device, the irradiating portion irradiates the end portion with the laser beam having a belt shape extending along the end portion.

In the above substrate monitoring device, the portion of the substrate end where the image is formed on the light-receiving surface of the imaging unit expands the extent of the laser beam band-shaped extension.

In the above substrate monitoring method, the substrate has a square shape, and in the irradiation step, at least one of the four corners of the substrate is irradiated with the laser light.

When the above-mentioned substrate monitoring method is adopted, the laser beam enters the substrate from a direction oblique to two directions of the expansion direction of the substrate. Therefore, compared with the configuration in which the laser light is orthogonal to the substrate in one of the expansion directions and is incident on the substrate in a direction parallel to the other, the laser light introduced into the substrate is reflected inside the substrate and is easily expanded to a wider area in the substrate . Therefore, in the end face of the substrate, the ratio of the portion where the laser light is led out becomes larger.

In the above substrate monitoring method, the diameter of the irradiation port of the irradiation section is larger than the thickness of the substrate.

When the above substrate monitoring method is adopted, compared with the configuration in which the diameter of the irradiation port is smaller than the thickness of the substrate, the laser light is easily irradiated to the entire thickness direction of the end surface. By this, since the amount of light introduced into the substrate from the end surface of the substrate becomes larger, the amount of laser light led out of the end surface of the substrate from the outside of the substrate also changes Big.

10‧‧‧Sputtering device

11‧‧‧Transport Room

12‧‧‧Load lock room

13‧‧‧Sputter room

14‧‧‧Cathode

15‧‧‧Transport robot

21‧‧‧room body

21a‧‧‧Move out and move in

21b‧‧‧Camera window

21c‧‧‧Irradiation window

21d‧‧‧Inner wall

21e‧‧‧Upper wall

22‧‧‧Backboard

23‧‧‧ Subject

24‧‧‧ substrate carrier

24a‧‧‧Setting surface

25‧‧‧Posture Change Department

26‧‧‧Lifting device

26a‧‧‧Lift pin

26b‧‧‧ Lifting mechanism

27, 51‧‧‧ camera department

28‧‧‧Fixture

29, 52‧‧‧Laser Irradiation Department

29a, 52a‧‧‧irradiation port

31‧‧‧Monitoring Department

40‧‧‧Control Department

40a‧‧‧ Memory Department

C‧‧‧Camera range

D‧‧‧Diameter

Di‧‧‧Camera direction

L, L1, L2, L3 ‧‧‧ laser light

La‧‧‧optic axis

M‧‧‧Metal film

Me2

P1‧‧‧irradiation position

P2‧‧‧Target position

P3‧‧‧irradiated position

P4‧‧‧Export location

P5‧‧‧High brightness position

PP‧‧‧Through the path

R1‧‧‧The first area

R2‧‧‧The second area

R3‧‧‧The third area

R4‧‧‧The fourth area

S‧‧‧Substrate

S1‧‧‧ substrate

S2‧‧‧ substrate

S3‧‧‧ substrate

Sc‧‧‧Corner

Se‧‧‧End

Se1‧‧‧End

Se2

Sh‧‧‧High Brightness Department

So‧‧‧Export Department

T‧‧‧thickness

W‧‧‧Wide irradiation

The first figure is a block diagram showing a schematic configuration of a sputtering device in a first embodiment in which a substrate monitoring device is applied to a sputtering device.

The second figure is a block diagram showing the internal structure of the sputtering device together with the substrate.

The third figure is a block diagram schematically showing the structure of the sputtering apparatus when viewed from the opposite direction to the substrate.

The fourth diagram is a block diagram schematically showing the relationship between the position of the irradiation port provided by the laser irradiation unit and the position of the end surface of the substrate, and the relationship between the transmission path of the laser light and the imaging direction of the imaging unit.

The fifth diagram is a block diagram for explaining the imaging range of the imaging unit.

The sixth figure is a block diagram for explaining the electrical structure of the sputtering device.

The seventh figure is a flowchart for explaining the processing procedure in one embodiment in which the substrate monitoring method is embodied.

The eighth figure is a flowchart for explaining an example of the operation of the sputtering vacuum chamber.

The ninth figure is used to explain the action diagram of the sputtering device.

Figure 10 is a schematic diagram showing the state of light scattering on the end surface of the substrate.

FIG. 11 is a process diagram for explaining the imaging process in the modification.

FIG. 12 is a plan view showing a planar structure of a sputtering vacuum chamber in a second embodiment in which a substrate monitoring device is applied to a sputtering device.

Figure 13 is a schematic diagram showing the relationship between the substrate supported by the lift pins and the imaging range of the imaging unit.

Figure 14 is a diagram showing the state in which the laser irradiation part irradiates the laser beam on the end of the substrate.

Figure 15 is a diagram showing the state in which the laser irradiation part irradiates laser light to the end of the substrate.

Figure 16 is a schematic diagram showing the state of the reflected laser light and the scattered state at the end of the substrate.

Figure 17 is a schematic diagram showing the state of the laser beam reflected at the end of the substrate.

Fig. 18 is a schematic diagram showing a state in which laser rays are reflected at the end of the substrate in the modification.

[First embodiment]

With reference to the first to tenth drawings, the first embodiment in which the substrate monitoring device is applied to the sputtering device and the first embodiment in which the substrate monitoring method is embodied will be described. Hereinafter, the configuration of the sputtering apparatus, the configuration of the sputtering vacuum chamber, the substrate monitoring method, and the function of the sputtering apparatus will be described in order.

[Structure of Sputtering Device]

The structure of the sputtering apparatus will be described with reference to the first figure.

As shown in the first figure, the sputtering apparatus 10 includes: one transfer chamber 11; two load lock chambers 12 connected to the transfer chamber 11; and two sputtering chambers 13 connected to the transfer chamber 11. In addition, partition valves are arranged between each load lock chamber 12 and the transfer chamber 11 and between each sputtering chamber 13 and the transfer chamber 11, and each of the partition valves is in a state in which the transfer chamber 11 and the corresponding processing chamber are connected. Change between connected states.

The load lock chamber 12 carries the substrate S to be processed by the sputtering device 10 from the outside of the sputtering device 10 into the inside of the sputtering device 10 and from the inside of the sputtering device 10 out of the sputtering device 10. When the load lock chamber 12 carries the substrate S and the substrate S out, the inside of the load lock chamber 12 is opened to the atmosphere without communicating with the transfer chamber 11. In addition, when the load lock chamber 12 transfers the transferred substrate S to the transfer chamber 11 and receives the transferred substrate S from the transfer chamber 11, it is decompressed to a specified pressure together with the transfer chamber 11 while communicating with the transfer chamber 11 Space.

In addition, the sputtering apparatus 10 may be configured to include one load lock chamber 12 or may include three or more load lock chambers 12.

The sputtering chamber 13 includes a cathode 14, and a predetermined film is formed on one surface of the substrate S by the cathode 14. In the sputtering chamber 13, the film formed on the substrate S may be a transparent conductive film such as an indium tin oxide film (ITO film) or an indium gallium zinc oxide film (IGZO film), or may be aluminum, copper, molybdenum, molybdenum tungsten , And titanium and other metal films. Alternatively, the film formed on the substrate S in the sputtering chamber 13 may be a compound film such as an oxide film such as silicon oxide or titanium oxide, and a nitride film such as titanium nitride. When the sputtering chamber 13 forms a film on the substrate S, a space decompressed to the same pressure as the inside of the transfer chamber 11 or a pressure lower than the inside of the transfer chamber 11 is formed.

In addition, each sputtering chamber 13 may include a cathode 14 for forming the same film as the remaining sputtering chambers 13 on the substrate S, or may include a cathode 14 for forming different films on the substrate S. In addition, the sputtering apparatus 10 may be configured to include one sputtering chamber 13, or may be configured to include three or more sputtering chambers 13.

The transfer chamber 11 includes a transfer robot 15 that transfers the substrate S. The transfer robot 15 transfers the substrate S before film formation to the sputtering chamber 13 from the load lock chamber 12 through the transfer chamber 11, and transfers the substrate S after film formation from the sputtering chamber 13 to the load lock chamber 12 through the transfer chamber 11.

In addition, the sputtering apparatus 10 may also include a chamber other than the load lock chamber 12 and the sputtering chamber 13, for example, a pre-processing chamber for processing before forming a film on the substrate S, or for performing processing on the substrate S Post-processing chamber for processing after film formation, etc.

[Composition of sputtering room]

The configuration of the sputtering chamber 13 will be described with reference to the second to fifth drawings. In addition, in the second figure, when explaining the structure of the sputtering chamber 13, expediently also shows the transfer chamber 11 connected to the sputtering chamber 13 a part of. In addition, the second diagram shows the state of the substrate stage when the transfer robot 15 transfers the substrate S from the transfer chamber 11 into the sputtering chamber 13 with a solid line, and shows that when a specified film is formed on the substrate S with a two-dot chain line The state of the substrate stage.

As shown in the second figure, the sputtering chamber 13 includes a chamber body 21 having a box shape. A side wall of the chamber body 21 is connected to the side wall of the transfer chamber 11 and a carrying-out port 21a is formed. The carry-in/out entrance 21a is a hole that penetrates the side wall in the horizontal direction, and is a hole for carrying out the carry-in/out substrate S into the chamber body 21. The above-mentioned separating valve is arranged on the carrying-out and carrying-in port 21a. The separating valve maintains the sputtering chamber 13 in an airtight state with respect to the carrying chamber 11 while maintaining a state in which the sputtering chamber 13 and the carrying chamber 11 are not in communication. In the inner wall surface of the chamber body 21, a cathode 14 is provided on the surface facing the side wall connected to the transfer chamber 11.

The cathode 14 includes a back plate 22 and a target 23. In the cathode 14, the back plate 22 is fixed to the chamber body 21, and the target 23 is fixed to the back plate 22. The forming material of the target 23 is a material for forming any of the above-mentioned films.

Inside the chamber body 21, a substrate stage 24 on which the substrate S is installed is provided. The substrate stage 24 has a rectangular plate shape and an installation surface 24a on which the substrate S is installed. The substrate stage 24 is connected to an attitude changing unit 25 that changes the attitude of the substrate stage 24.

The posture changing unit 25 changes the posture of the substrate stage 24 between the horizontal posture and the upright posture. When the posture of the substrate stage 24 is a horizontal posture, the substrate stage 24 is in a state substantially parallel to a lower surface of a part of the inner wall surface of the chamber body 21, and is in a state where the target 23 is substantially perpendicular. In addition, when the posture of the substrate stage 24 is an upright posture, the substrate stage 24 is substantially perpendicular to the lower surface, and the substrate stage 24 is substantially parallel to the target 23.

In the posture of the substrate stage 24, the horizontal posture moves the substrate S before film formation into the splash The posture of the substrate stage 24 at the time of the plating chamber 13 and when the substrate S after the film formation is carried out of the sputtering chamber 13. In addition, the upright posture is the posture of the substrate stage 24 during the film formation of the substrate S before film formation.

The sputtering chamber 13 includes a lifting device 26 that changes the position of the substrate S with respect to the installation surface 24 a of the substrate stage 24. The lifting device 26 changes the position of the substrate S between the installation position and the rising position. When the substrate S is located at the installation position, the substrate S contacts the installation surface 24a of the substrate stage 24, and when the substrate S is located at the raised position, the substrate S is located above the specified distance from the installation surface 24a.

The lifting device 26 includes a plurality of lifting pins 26a and a lifting mechanism 26b. Each lift pin 26a has an end portion before contact with the substrate S. Each lift pin 26a is in contact with the substrate S to position the substrate S above the installation surface 24a, and maintains the posture of the substrate S with the substrate S in the raised position. The lift pin 26a is an example of an arrangement part. The lift mechanism 26b changes the position of the installation surface 24a of the front end portion of the lift pin 26a to the substrate stage 24 in the direction of gravity.

The lift mechanism 26b raises the lift pins 26a when the substrate S before film formation is delivered from the transfer robot 15 to the substrate stage 24 and when the substrate S after film formation is delivered from the substrate stage 24 to the transfer robot 15 The pin 26a supports the substrate S in the raised position. When the lift mechanism 26b changes the position of the substrate S from the raised position to the installation position, the lift pin 26a is lowered, and the front end of the lift pin 26a is located below the installation surface 24a.

An imaging window 21b is formed on the upper wall of the sputtering chamber 13. The imaging window 21b is constituted by a transparent member having a designated permeability embedded in a hole penetrating the upper wall of the chamber body 21 in the direction of gravity. An imaging unit 27 having a designated imaging range is arranged outside the chamber body 21 and at a position overlapping the imaging window 21b.

The imaging unit 27 is, for example, a CCD camera or a CMOS camera. The imaging unit 27 has a light-receiving surface in which a plurality of light-receiving elements are arranged, and the image-receiving unit 27 recognizes the light intensity of the plurality of light-receiving elements. The arrangement is recognized as an image, in other words, as an optical image. The imaging unit 27 converts the optical image formed on the light-receiving surface of the imaging unit 27 into an electrical signal, that is, photographs an object that emits light toward the imaging unit 27.

The configuration of the sputtering chamber 13 will be further described with reference to the third figure. In the third diagram, in the state of the sputtering chamber 13, a plurality of lift pins 26a maintain the posture of the substrate S at the raised position. In the third diagram, the position of the imaging unit 27 arranged outside the chamber body 21 is indicated by a broken line.

As shown in the third figure, the substrate stage 24 includes a plurality of jigs 28, and each jig 28 changes position between the retracted position and the fixed position. The jig 28 is at the retracted position when the substrate S is at the raised position, and at the fixed position when the substrate S is at the installation position, and fixes the substrate S to the installation surface 24 a of the substrate stage 24.

The substrate S has a rectangular plate shape, and the outer surface of the substrate S is composed of a surface on which a designated film is formed, a back surface on the side opposite to the surface, and an end surface Se1 having a rectangular ring shape between the surface and the back surface. The substrate S has a square shape when viewed from the direction opposite to the surface. The four corners on the end surface Se1 of the substrate S are the corners Sc of the substrate S, respectively. In addition, in the substrate S, the portion including the front edge, the back edge, and the end surface Se1 is the end of the substrate S.

The forming material of the substrate S is a material having light permeability to visible light, for example, glass. In addition, the forming material of the substrate S may be various synthetic resins as long as it has heat resistance to the heat generated during film formation. In this case, the laser irradiating unit 29 described later can selectively irradiate visible laser light having laser light of a wavelength included in the visible light region. In the case of using visible light laser, the irradiation position of the laser light can be confirmed by visual inspection, that is, the position of the laser light irradiated on the substrate, and the position of the laser light can be adjusted. In addition, as long as it is a visible light laser, it is possible to select a laser that irradiates laser light with colors such as red, green, and blue according to the imaging environment and the performance of the imaging unit such as the substrate size, arrangement state of the irradiation target, and the brightness of the processing room. .

The imaging unit 27 overlaps with the center of the substrate stage 24 in plan view opposed to the substrate stage 24 in the horizontal posture. In addition, when the substrate S is supported by the lift pins 26a, the imaging unit 27 overlaps the center of the substrate S in a plan view opposed to the substrate stage 24.

An irradiation window 21c is formed in one of the four corners of the chamber body 21. The irradiation window 21c is constituted by a transparent member having a hole penetrating one corner of the chamber body 21 in the horizontal direction and having a predetermined permeability. A laser irradiation portion 29 that irradiates the laser light L toward the inside of the chamber body 21 is provided at a position outside the chamber body 21 and overlapping the irradiation window 21c. The laser irradiation unit 29, the imaging unit 27, and the lift pin 26a constitute a part of the substrate monitoring device.

The laser irradiation unit 29 is provided with an irradiation port 29a for irradiating laser light L. As shown in the fourth figure described later, the laser irradiation unit 29 irradiates laser light toward an irradiation position P1 at a designated position inside the chamber body 21 L point light source. The irradiation position P1 is, for example, a portion of the inner wall surface 21d of the chamber body 21 that faces the irradiation port 29a of the laser irradiation section 29.

In addition, when the substrate S is at the raised position, the laser beam L irradiated by the laser irradiation section 29 irradiates one of the corner portions Sc of the substrate S. At this time, the optical axis La of the laser light L is set so as to be introduced into the substrate S from the corner Sc of the substrate S, and the laser light L is derived from a position on the end surface Se1 different from the position where the laser light L is introduced.

As a result, at least a part of the laser light L is introduced into the substrate S from the corner Sc of the substrate S. Then, the light introduced into the substrate S is extracted from the end portion Se1 of the substrate S at a different position from the lead portion So of the corner portion Sc of the substrate S. The lead-out portion So is, for example, the entire end surface Se1 of the end surface Se1 of the substrate S excluding the corner portion Sc irradiated with the laser light L. Therefore, the brightness of the corner portion Sc on which the laser light L is irradiated on the end surface Se1 of the substrate S and the brightness of the lead-out portion So are higher than those of the substrate S.

That is, the end surface Se1 generates scattered light from the laser light L. Then, through the end At least a part of the laser light L scattered on the surface Se1 is received by the light receiving element of the imaging unit 27, and the position of the end surface Se1 becomes a high-brightness position and is grasped by the imaging unit 27. The imaging unit 27 converts the optical image formed on the end surface Se1 of the light-receiving surface of the imaging unit 27 into an electrical signal. That is, the imaging unit 27 images the end surface Se1 that emits light toward the imaging unit 27.

In other words, the lift pin 26a positions the end surface Se1 of the substrate S at the target position P2. The target position P2 is in the internal space of the chamber body 21, and is the area where the end surface Se1 of the substrate S is located when the substrate S is in the raised position. With this, the lift pin 26a derives the laser light L from the lead-out position P4 set at a position different from the irradiated position P3 set at one corner Sc in the end face Se1 of the substrate S. The lead-out position P4 is in the internal space of the chamber body 21, and when the substrate S is in the raised position, the area where the lead-out portion So is located in the end surface Se1.

As shown in the fourth diagram, the path through which the laser light L passes through the substrate S is the transmission path PP, and the direction in which the imaging unit 27 is viewed from the plane including the imaging range is the imaging direction Di. Among them, the transmission path PP is a direction extending substantially along the horizontal direction. In addition, the imaging direction Di is roughly along the direction of gravity. That is, the transmission path PP in the sputtering chamber 13 is substantially orthogonal to the imaging direction Di.

Therefore, as compared with a configuration in which the angle formed by the transmission path PP and the imaging direction Di is smaller, the optical image on the end surface Se1 of the substrate S is formed on the light-receiving surface of the imaging unit 27 in a shape substantially the same as the end surface Se1 of the substrate S. Therefore, it is easy to monitor the imaging result of the Se1 video on the end surface.

When the irradiation port 29a has a diameter D and the substrate S has a thickness T, the diameter D is larger than the thickness T. By this, compared with the configuration in which the diameter D of the irradiation opening 29a is smaller than the thickness T of the substrate S, the laser light L easily irradiates the entire thickness direction of the end surface Se1. Therefore, since the amount of laser light L introduced into the inside of the substrate S from the end surface Se1 of the substrate S is large, the outside of the substrate S is led out from the lead-out portion So of the substrate S The amount of laser light L is also large.

In this regard, as display devices such as flat panel displays are made lighter and thinner, substrates used for display devices are also thinner. In recent years, the substrate S having a thickness T of less than 1 mm has also been used as the substrate S constituting the display device. When the thickness T of the substrate S is, for example, 0.1 mm or more and 0.7 mm or less, the diameter D is preferably 1 mm or more, more preferably 3 mm or more, and still more preferably 5 mm or more.

When the lift pin 26a holds the substrate S at the raised position, the end surface Se1 of the substrate S is arranged at a position overlapping the irradiation opening 29a of the laser irradiation section 29 in the direction of gravity. When the lift pin 26a holds the substrate S at the raised position, and the end surface Se1 of the substrate S is arranged at a position overlapping the irradiation port 29a of the laser irradiation section 29 in the direction of gravity, the laser irradiation section 29 is The end surface Se1 of S is irradiated with laser light L in a substantially vertical direction. Therefore, more laser light L is introduced through the end surface Se1 of the substrate S.

In such a configuration, even if a metal film is formed on the surface or back surface of the substrate S, the laser light L can be introduced into the substrate S from the end surface Se1 of the substrate S to which no metal film or metal film is attached. Laser light L is more surely introduced into the substrate S. As a result, even for the substrate S having the metal film, the brightness of the entire end surface Se1 of the substrate S is easily improved.

In addition, when the lifting pin 26a holds the substrate S at the raised position, the end surface Se1 of the substrate S may be arranged above the irradiation port 29a of the laser irradiation section 29 in the direction of gravity. Alternatively, when the lifting pin 26a holds the substrate S in the raised position, the end surface Se1 of the substrate S may be arranged at a position below the irradiation port 29a of the laser irradiation section 29 in the direction of gravity.

As shown in the fifth diagram, the imaging unit 27 has a designated imaging range C. The imaging unit 27 is arranged in the same way as the entire end surface Se1 of the substrate S, and includes the entire high-brightness portion Sh, and the area including the corner portion Sc radiating the laser light L and the derivation unit So is included in the imaging range C. Shoot The position where the light L illuminates the irradiation position P1 of the object is different. That is, the imaging unit 27 is arranged in the internal space of the chamber body 21 such that the entire high-luminance position P5 composed of the irradiation position P3 and the lead-out position P4 is included in the imaging range C. In other words, in the direction of gravity, the position of the imaging unit 27 is separated from the position of the substrate stage 24 on which the substrate S is provided, and the imaging range C separated by the imaging unit 27 includes the entire end surface Se1 of the substrate S.

[Electrical composition of sputtering equipment]

The electrical structure of the sputtering apparatus 10 will be described with reference to the sixth figure. Only the parts of the electrical configuration of the sputtering device 10 regarding imaging by the imaging unit 27, irradiation of the laser beam L by the laser irradiation unit 29, and monitoring of the substrate S will be described below.

The sputtering apparatus 10 includes a control unit 40 that controls the driving of the sputtering apparatus 10. The control unit 40 is electrically connected to the transport robot 15, the attitude changing unit 25, the elevating mechanism 26b, the imaging unit 27, the jig 28, and the laser irradiation unit 29, respectively. The control unit 40 controls the driving of the transport robot 15, the attitude changing unit 25, the elevating mechanism 26b, and the jig 28 to change the position of the substrate S inside the sputtering apparatus 10. In addition, the control unit 40 controls the driving of the imaging unit 27 and the laser irradiation unit 29 so as to perform an operation for monitoring the state in the end surface Se1 of the substrate S. The control unit 40 obtains the imaging result, such as an image, output by the imaging unit 27 to the control unit 40.

The control unit 40 includes a memory unit 40a and a monitoring unit 31. The memory section 40a memorizes the program interpreted by the control section 40, and is a program concerning the film forming process of the monitoring process of the substrate S contained in the sputtering chamber 13.

The control unit 40 interprets and executes a program related to the film forming process, and the control unit 40 outputs a program for driving the transport robot 15, the attitude changing unit 25, the elevating mechanism 26b, the imaging unit 27, the jig 28, and the laser irradiation unit 29, respectively. Signal and the signal used to stop the drive. Then, move The sending robot 15, the attitude changing unit 25, the elevating mechanism 26b, the imaging unit 27, and the laser irradiation unit 29 each receive a signal from the control unit 40 and start or stop the operation.

The monitoring unit 31 monitors the image of the imaging result of the imaging unit 27. The monitoring unit 31 determines a crack or a notch on the end surface Se1 of the substrate S based on the image, and further determines whether damage such as a crack extending from the end surface Se1 of the substrate S toward the inside is formed. The control unit 40 includes the monitoring unit 31 described above, but it may be provided in the sputtering apparatus 10 separately from the monitoring unit 31. The laser irradiation unit 29, the imaging unit 27, the elevating pin 26a, and the monitoring unit 31 are examples of a board monitoring device.

In addition, the control unit 40 may obtain, for example, information about the position of the transfer robot 15 and information about the number of motor revolutions for raising and lowering the lifting pins 26a as information about the position of the substrate S in the sputtering chamber 13.

In this configuration, when the control unit 40 determines from the acquired information that the position of the substrate S is the raised position, it generates a signal for the laser irradiation unit 29 to start irradiating the laser light L, and outputs to the laser irradiation unit 29 to obtain The laser irradiation unit 29 of the signal from the control unit 40 starts to irradiate the laser light L. Then, the control unit 40 generates a signal for imaging the imaging unit 27 and outputs it to the imaging unit 27, and the imaging unit 27 that acquires the signal from the control unit 40 images the substrate S included in the imaging range C.

[Substrate monitoring method]

The substrate monitoring method will be described with reference to the seventh and eighth figures.

As shown in the seventh figure, the substrate monitoring method includes an irradiation step (step S11), an imaging step (step S12), and a monitoring step (step S13). In the irradiation step, the laser irradiation unit 29 irradiates the laser light L to one corner Sc of the substrate S, and introduces at least a part of the laser light L into the substrate S from the corner Sc where the laser light L is irradiated. As a result, in the end surface Se1 of the substrate S, the brightness of the corner portion Sc irradiated with the laser light L and the brightness of the derivation portion So that derives the laser light L introduced into the substrate S are greater than those of the substrate S Other parts are high.

In the imaging process, the imaging unit 27 images the entire end surface Se1 of the substrate S.

In the monitoring process, the monitoring unit 31 monitors the imaging result of the imaging unit 27. For example, the monitoring unit 31 sets a plurality of detection lines parallel to each other in the image that is also the imaging result of the imaging unit 27, and is a detection line that spans the end surface Se1 of the substrate S, and the brightness of each detection line is higher than that of other detection lines. The location of the high part. The monitoring unit 31 processes the position information of the portion with high brightness obtained as the outer edge of the substrate S to be monitored, that is, the position information of the end surface Se1 of the substrate S on the detection line.

In this regard, after the monitoring unit 31 monitors the state of the end surface Se1 of the substrate S, the monitoring unit 31 sets the image processing range as a part of the imaging range, and has two reference lines in the image processing range that serve as a reference in detecting damage on the end surface Se1. In addition, the position of each reference line in the image processing range and the setting width of the width between the two reference lines are set in advance so that the outer edge of the substrate S held by the arrangement portion is included between the two reference lines. Then, when the monitoring unit 31 detects that there are more than a specified number of high-brightness positions on each detection line and does not enter the area sandwiched by these two reference lines, it is determined that a crack or a notch is formed on the end surface Se1 of the substrate S damage.

In addition, when the monitoring portion 31 is located at a position surrounded by a reference outer edge shape at a portion where the brightness is high, and is separated from the outer edge shape by a predetermined distance, it is determined that a crack is formed from the end surface Se1 of the substrate S toward the inside of the substrate S .

In addition, the above-mentioned sputtering apparatus 10 implements a substrate monitoring method according to the following procedure, for example.

That is, as shown in the eighth figure, the first irradiation step (step S21), the first imaging step (step S22), the film formation step (step S23), the second irradiation step (step S24), and the first Second imaging process (step S25). In addition, before starting the first irradiation process, the control unit 40 causes The transfer robot 15 transfers the substrate S from the transfer chamber 11 into the sputtering chamber 13.

In addition, before starting the first irradiation process, the control unit 40 causes the lifting mechanism 26b to raise the lifting pin 26a. Then, the front end of the lift pin 26a comes into contact with the back surface of the substrate S, and the transport robot 15 sends the substrate S to the lift pin 26a and moves it outside the sputtering chamber 13. With this, the control unit 40 holds the lift pin 26a at the raised position to hold the substrate S.

Then, in the first irradiation step, the control unit 40 causes the laser irradiation unit 29 to start irradiating the laser light L, and the laser light L irradiates one corner Sc of the substrate S. As a result, the laser light L is introduced into the substrate S, and the laser light L is derived from the lead-out portion So of the substrate S. As a result, the brightness of the end surface Se1 of the substrate S is higher than the brightness of other portions of the substrate S and the lift pins 26a.

Next, in the first imaging step, the control unit 40 causes the imaging unit 27 to image the entire end surface Se1 of the substrate S. In addition, when the imaging unit 27 ends imaging of the end surface Se1, the control unit 40 causes the laser irradiation unit 29 to stop irradiating the laser light L. At this time, for example, the control unit 40 may acquire the imaging result of the imaging unit 27, determine that the imaging by the imaging unit 27 is ended, generate a signal for causing the laser irradiation unit 29 to end the irradiation of the laser light L, and The irradiation unit 29 outputs.

In the film forming step, first, the control unit 40 lowers the lifting mechanism 26b to lower the lifting pin 26a, and sets the substrate S on the installation surface 24a of the substrate stage 24. Next, the control unit 40 moves the jig 28 from the retracted position to the fixed position, and fixes the substrate S to the installation surface 24a. When the substrate S is fixed by the jig 28, the control unit 40 causes the posture changing unit 25 to change the posture of the substrate stage 24 from a horizontal posture to an upright posture.

Then, while the posture changing section 25 maintains the posture of the substrate stage 24 in an upright posture, a film 23 is formed on the surface of the substrate S by sputtering the target 23. When the film formation is completed, the posture changing section 25 changes the posture of the substrate stage 24 from the upright posture to the horizontal posture, and the jig 28 changes from the fixed position Move to the retracted position.

Next, before starting the second irradiation process, and between the film forming process and the second irradiation process, the control unit 40 causes the elevating mechanism 26b to elevate the elevating pin 26a. With this, the lift pin 26a holds the substrate S at the raised position. Then, in the second irradiation step, the control unit 40 causes the laser irradiation unit 29 to start irradiating the laser light L, and the laser light L irradiates one corner Sc of the substrate S.

Thereafter, in the second imaging step, the control unit 40 causes the imaging unit 27 to image the entire end surface Se1 of the substrate S. In addition, when the imaging section 27 ends the imaging of the end surface Se1, the control section 40 causes the laser irradiation section 29 to end the irradiation of the laser light L.

When the irradiation of the laser beam L is completed, the control unit 40 causes the transfer robot 15 to enter the sputtering chamber 13 from the transfer chamber 11 and receives the film-formed substrate S from the lift pin 26a. Then, the control unit 40 causes the transport robot 15 to carry the film-formed substrate S out of the sputtering chamber 13.

In addition, the monitoring process is implemented, for example, at the following time. The monitoring process is performed from the processing of the first imaging process until the posture of the substrate stage 24 becomes the upright posture. Then, when the monitoring unit 31 determines that damage is formed on the substrate S, the control unit 40 preferably suspends processing after the film forming process. With this configuration, since the damaged substrate S is not formed, unnecessary waste of the target 23 can be suppressed.

In addition, when film formation is performed on the damaged substrate S, the film-forming species flying toward the crack or notch of the substrate S adheres to the installation surface 24 a of the substrate stage 24. Then, by peeling off the film attached to the substrate stage 24, fine particles are generated inside the sputtering chamber 13. In this regard, as in this embodiment, when a crack or a notch is formed in the substrate S, the processing after the film formation process is suspended, the formation of a film in an unnecessary area as described above can be suppressed, so the sputtering chamber 13 can also be reduced The amount of particles generated within.

Furthermore, the damaged substrate S can also be prevented from being split into a plurality of fragments that cannot be recovered by the transport robot 15 with a change in the posture of the substrate stage 24, so that it is possible to reduce open sputtering for recovering the broken substrate Room 13 frequency.

In addition, for example, the monitoring process is performed from the processing in the second imaging process to before the substrate S is carried out from the sputtering chamber 13.

In this regard, the sputtering apparatus 10 is configured to form mutually different films in the two sputtering chambers 13, and after the film formation of the substrate S in the first sputtering chamber 13 continues in the second sputtering chamber In the case where the substrate S is formed into a film in 13, the following functions and effects can be obtained.

That is, when the monitoring unit 31 included in the first sputtering chamber 13 determines that damage is formed on the substrate S, the control unit 40 should suspend the transfer from the first sputtering chamber 13 to the second sputtering chamber 13. This prevents the damaged substrate S from being transferred to the second sputtering chamber 13. As a result, the substrate S can be suppressed from being broken by the transfer robot 15 and unnecessary consumption of the target 23 of the second sputtering chamber 13 is unnecessary. Also, in such a configuration, with the partition valve between the first sputtering chamber 13 and the transfer chamber 11 closed, the operator can open the first sputtering chamber 13 to the atmosphere to recover the damaged substrate S.

In addition, if the sputtering apparatus 10 is configured to form the same film with each other in the two sputtering chambers 13, the following functions and effects can be obtained.

That is, when the monitoring unit 31 included in the one sputtering chamber 13 determines that damage is formed on the substrate S, the control unit 40 should suspend the transfer from the one sputtering chamber 13 to the transfer chamber 11. In addition, the control unit 40 may also maintain the closed state of the separation valve between the one sputtering chamber 13 and the transfer chamber 11 and suspend the film formation on the substrate S in the one sputtering chamber 13 and use only the other sputtering chamber 13 pair. The substrate S is formed into a film.

In addition, the monitoring process of the imaging result of the first imaging process and the monitoring process of the imaging result of the second imaging process may be advanced after the substrate S after the film formation is transported from the sputtering chamber 13 Row.

In addition, in the first imaging process and the second imaging process, either process may be omitted. In this regard, the damage of the substrate S is formed, for example, before the substrate S is transferred into the sputtering chamber 13 through the transfer chamber 11. Therefore, when the imaging process is performed only once, in order to detect the damage formed before the film is formed on the substrate S, it is preferable to perform the imaging process before the film forming process.

In addition, for example, the damage of the substrate S is formed between the film forming steps by heat conduction from the cathode 14 to the substrate S. Therefore, when the imaging process is performed only once and it is desired to detect the damage formed on the substrate S in the film forming process, it is preferable to perform the imaging process after the film forming process.

In addition, the laser irradiation unit 29 may irradiate the laser light L from the first irradiation step to the end of the second imaging step. In this case, the process for ending the irradiation of laser light and the process of the second irradiation process before the film forming process can be omitted. Alternatively, the laser light L may be irradiated at a time before the substrate S is carried into the sputtering chamber 13 and continued until a plurality of substrates S are processed inside the sputtering chamber 13. In this case, the processing of the first irradiation step and the processing of the second irradiation step can be omitted.

[The role of sputtering equipment]

The function of the sputtering device 10 will be described with reference to the ninth figure.

In the sputtering chamber 13, the imaging unit 27 is located at a location different from the irradiation position P1 of the laser beam L irradiation target. With this, at least a part of the end surface Se1 of the substrate S where a damaged part such as a crack or a notch is formed in the substrate S can be photographed. Then, at the high-brightness position P5 including the irradiated position P3 and the lead-out position P4, the laser irradiation unit 29 irradiates the image taken by the imaging unit 27 at the high-brightness position P5 because the brightness is higher than other positions. The state of the end face Se1 of the substrate. That is, the optical image reflected on the end surface Se1 of the imaging unit 27 by irradiating the laser light L is stored in the imaging unit 27 In the image. As a result, the end surface Se1 of the substrate S can be monitored in a state where the degree of freedom of the position of the imaging unit 27 to the position of the laser irradiation unit 29 is increased.

As shown in the ninth figure, the laser light L irradiated by the laser irradiation unit 29 is introduced into the substrate S from one corner Sc of the substrate S. Therefore, the light rays L1, L2, and L3 introduced into the substrate S among the light rays included in the laser light L are reflected inside the substrate S according to the angle formed with the end surface Se1 when they are introduced into the substrate S, respectively. In addition, when the laser light L irradiates a portion of the end surface Se1 different from the corner Sc, the laser light L introduced into the substrate S hardly reflects inside the substrate S when it is irradiated from a direction substantially perpendicular to the end surface Se1 of the substrate S. In such a configuration, in order for the image captured by the imaging unit 27 to be in a state in which the entire end surface Se1 of the substrate S can be recognized, the sputtering device 10 needs to include a plurality of irradiation units. Then, it is necessary to simultaneously illuminate the end surface Se1 of the substrate S with a plurality of laser beams to increase the brightness of the entire end surface Se1.

Conversely, when the laser irradiation section 29 of this embodiment is used, the light introduced into the substrate S is reflected inside the substrate S, and it is easy to expand to a wider area in the substrate S. Therefore, in the end surface Se1 of the substrate S, the area of the lead-out portion So that emits light incident inside the substrate S becomes larger. As a result, the end surface Se1 of the substrate S can reduce the number of laser irradiated portions 29 by using all portions other than the portion irradiated with the laser light L as the lead-out portion So.

As shown in FIG. 10, since the substrate S has light permeability, the laser light L irradiated on the substrate S is introduced into the substrate S, and the laser light L introduced into the substrate S is derived from the derivation portion So included in the end surface Se1. The end surface Se1 has a surface roughness that scatters the laser light L derived from the end surface Se1. Therefore, when the laser light L is derived from the end surface Se1, the laser light L is scattered on the end surface Se1. Thereby, the laser light L scattered on the end surface Se1 improves the brightness on the end surface Se1 of the substrate S. In addition, compared with the configuration in which the laser light L does not scatter in the end surface Se1, the laser light L derived from the end surface Se1 The range of the injection angle becomes larger.

As described above, when the first embodiment of the substrate monitoring device and the substrate monitoring method is adopted, the effects listed below can be obtained.

(1) In a state where the degree of freedom of the position of the imaging unit 27 to the position of the laser irradiation unit 29 is increased, the state of the end surface Se1 of the substrate S can be monitored.

(2) Since the laser irradiation unit 29 is a point light source, the difference in the brightness of the end surface Se1 in the substrate S, the brightness of other parts in the substrate S, and the brightness of the lift pins 26a becomes larger.

(3) Since the laser light L is irradiated to the corner portion Sc of the substrate S, the laser light L introduced into the substrate S is reflected inside the substrate S and is easily expanded to a wider area in the substrate S. Therefore, in the end surface Se1 of the substrate S, the ratio of the lead-out portion So becomes large.

(4) The laser light L easily irradiates the entire thickness direction of the end face Se1. Thereby, since the amount of light introduced into the substrate S from the end surface Se1 of the substrate S increases, the amount of laser light L led out of the substrate S from the lead-out portion So of the substrate S also increases.

(5) Since the laser light L is reflected in the substrate S and passes through the inside of the substrate S to the end surface Se1 of the substrate S, an image of the end surface Se1 of the substrate S can be formed.

(6) Compared with the configuration in which the angle formed by the transmission path PP and the imaging direction Di is smaller, the image of the end surface Se1 in the substrate S is formed on the light-receiving surface of the imaging unit 27 in substantially the same shape as the end surface Se1 of the substrate S. Therefore, it is easy to monitor the camera results.

[Modification of the first embodiment]

In addition, the above-mentioned embodiment can also be implemented with appropriate changes as follows.

[Modified example of imaging process] [First Modification]

‧In the imaging process, the imaging unit 27 may photograph the substrate S moving from the raised position to the installation position, or may photograph the substrate S moving from the installation position to the upward position.

The imaging process of the imaging unit 27 for imaging the substrate S moving from the raised position to the installation position will be described with reference to FIG. 11. In addition, the process of photographing the substrate S moving from the installation position to the ascending position is compared with the process of photographing the substrate S moving from the ascending position to the installation position. Although the direction of the substrate S moving in the direction of gravity is different, the operation of the imaging unit 27 and The operations of the laser irradiation unit 29 are the same. Therefore, the description of the step S of imaging the substrate 27 moving from the installation position to the raised position by the imaging unit 27 is omitted.

As shown in FIG. 11, the optical axis La of the laser light L irradiated by the laser irradiation portion 29 that fixes the position of the chamber body 21 moves the lift pin 26a in the direction of gravity from the raised position to the installation position. At this time, the substrate S has, for example, a first position, a second position, and a third position in order from the upper side in the direction of gravity.

Hereinafter, the substrate S at the first position is referred to as the substrate S1, the substrate S at the second position is referred to as the substrate S2, and the substrate S at the third position is referred to as the substrate S3. In addition, when the substrate S moves, for example, the substrate S may come into contact with the tip portions of the plurality of lift pins 26a at different positions in the direction of gravity, for example. At this time, the substrate S is arranged to have a slope with respect to the optical axis La of the laser light L. That is, since the optical axis La of the laser light L has a slope to the end surface Se1 of the substrate S, the laser light L is in a state where it is difficult to vertically introduce the end surface Se1 of the substrate S.

In this state, when the substrate S is lowered to the second position, the laser light L is first introduced into the end surface Se1 of the substrate S. Secondly, when the substrate S is lowered to the third position, the laser light L is not irradiated to the end surface Se1 of the substrate S3, but to a part of the surface of the substrate S.

Then, the lifting pin 26a moves from the rising position toward the installation position along the direction of gravity When the substrate S is moved, the imaging unit 27 images the substrate S1, the substrate S2, and the substrate S3.

In addition, in such a configuration, for example, the control unit 40 can control the operation of the imaging unit 27 as follows. That is, the control unit 40 acquires information about the number of motor revolutions for raising and lowering the lifting pin 26a as information about the position of the substrate S in the direction of gravity. Then, when the control unit 40 determines from the acquired information that the position of the substrate S is the first position, the second position, or the third position, it generates a signal for imaging the imaging unit 27 and outputs it to the imaging unit 27. Next, the imaging unit 27 that acquires the signal from the control unit 40 images the substrate S included in the imaging range C.

In addition, the control unit 40 may generate a signal for imaging the imaging unit 27 a plurality of times at a predetermined time interval while the motor for raising and lowering the lifting pin 26a operates, and output the signal to the imaging unit 27. The imaging unit 27 captures the imaging range Substrate S included in C. The plurality of images captured by the imaging unit 27 include the image including the substrate S1, the image including the substrate S2, and the image including the substrate S3 by the imaging unit 27 shooting a plurality of times at a specified time interval.

In this regard, when the substrate S is disposed at the first position, since the laser light L is not irradiated on the substrate S1, the position information of the end surface Se1 of the substrate S on the detection line cannot be obtained using the captured image.

Next, when the substrate S is arranged at the second position, in order to irradiate the end surface Se1 of the substrate S2 with the optical axis La of the laser beam L inclined, the substrate S2 is introduced as compared with when the laser beam L is irradiated substantially perpendicularly to the end surface Se1. The amount of laser light L inside may become smaller. In this case, the area of the leading portion So where the laser light L is led out of the end surface Se1 of the substrate S2 becomes smaller, or the brightness of the leading portion So becomes smaller, which is sometimes obtained on the entire end surface Se1 of the substrate S2 The position information of the end face Se1 on the detection line is difficult.

In addition, when the substrate S is arranged at the third position, the laser light L is also as described above, because In order to irradiate a position other than the end surface Se1 of the substrate S3, the amount of laser light L introduced into the substrate S3 becomes smaller as in the case of the substrate S2 described above. However, even in this case, by introducing the laser light L irradiated to a part of the surface of the substrate S3 into the interior of the substrate S3, many lead-out portions So may be obtained on the end surface Se1 of the substrate S3.

Therefore, the monitoring unit 31 synthesizes the imaging result of the imaging substrate S1, the imaging result of the imaging substrate S2, and the imaging result of the imaging substrate S3, and compensates for the insufficient portion of the entire end surface Se1 of the substrate S in each imaging result. Of the entire end surface Se1 of the substrate S, the position information of the end surface Se1 on the detection line. With this, it is possible to determine whether the substrate S is damaged.

In this connection, the thickness T of the substrate S is as described above, and sometimes it is less than 1 mm. At this time, depending on the number of lift pins 26a or the position of the substrate S facing the lift pins 26a, the substrate S provided on the lift pins 26a may be in the following state. That is, the entire substrate S is along a plane; or the outer edge of the substrate S sags toward the lower side of the gravity direction than the central portion of the substrate S; or the central portion of the substrate S faces the gravity direction than other portions The upper side protrudes. In this case, as shown in FIG. 11, the end surface Se1 of the substrate S has a slope with respect to the optical axis La of the laser light L. Regarding this point, if the imaging step is a step of photographing the substrate S at a plurality of positions in the direction of gravity, it can be determined whether the substrate S is damaged.

In addition, in the case of such a thin plate substrate, and a plurality of substrates are continuously subjected to film formation processing, the deformed state in each substrate is likely to be different from the deformed state in the remaining substrates. Therefore, when the laser light L and the imaging position of the substrate S are fixed one-to-one, the laser light L is either introduced or not introduced into the substrate S according to the deformed state in the substrate.

Even in this case, by adopting the imaging process of photographing the substrate S at a plurality of positions in the direction of gravity, the chance of photographing the substrate into which the laser light L is introduced to the substrate S can be increased. Then, in the plurality of imaging results, the plurality of imaging results are used to supplement the insufficient portion of the entire end surface Se1 of the substrate S, and the position information of the end surface Se1 on the detection line can be obtained from the entire end surface Se1 of the substrate S, and it can be judged Is there any damage in the substrate S?

‧The first modification is that in the imaging process, when the substrate S is ascending or descending, the imaging unit 27 images the substrate S at a plurality of positions, but it is not limited to this, and the first modification may be changed as follows. That is, the number of times the imaging unit 27 takes a picture may be one, and the imaging time of the imaging unit 27, in other words, the exposure time may be set between the beginning of the substrate S rising and ending, or between the beginning of falling and ending. In this way, using the integral value or the maximum value of the brightness of the imaging result obtained during the imaging time to obtain a portion with high brightness, the position information of the end surface Se1 on the detection line can be obtained over the entire end surface Se1 of the substrate S.

‧ In the first modification, it is preferable that the monitoring unit 31 completes the determination of whether there is damage in the substrate S between the movement of the substrate S from the installation position to the ascending position or between the ascending position and the installation position. Therefore, whether the substrate S is damaged is determined before the posture of the substrate S changes from the horizontal posture to the upright posture, or before the substrate S is transferred by the transfer robot 15. Thereby, the damaged substrate S can be suppressed from being broken by the posture change of the substrate S, or being broken by being transported by the transport robot 15.

‧In addition, the imaging process in the first embodiment may be combined with the imaging process in the first modification.

[Second Modification]

‧The imaging unit 27 may also photograph the substrate S transported by the transport robot 15. In such a configuration, for example, the imaging range C of the imaging unit 27 includes the loading/unloading entrance 21 a of the sputtering chamber 13. Then, the imaging unit 27 captures images when the front end position of the transport robot 15 carrying the substrate S in the transport direction of the substrate S is at a plurality of positions different from each other, for example Plate S.

Then, the monitoring unit 31 obtains the position information of the end surface Se1 on the detection line using a plurality of imaging results, and determines whether there is damage in the substrate S.

In addition, this imaging method and the configuration for implementing the imaging method are not limited to the sputtering device 10 in the above embodiment, that is, not limited to the multi-chamber sputtering device, but can also be applied to stand upright along the direction of gravity In the state of the substrate S, an in-line type device of a device that transports the substrate S and processes the substrate S.

[Other modifications]

‧The diameter D of the irradiation opening 29a of the laser irradiation section 29 may also be smaller than the thickness T of the substrate S. Even with such a configuration, the effects like the above (1) to (3), (5), and (6) can be obtained.

‧The sputtering chamber 13 may also be provided with a plurality of laser irradiation parts 29. In such a configuration, when the number of laser irradiation parts 29 is less than 4, each laser irradiation part 29 is preferably arranged one by one in the four corners of the chamber body 21. Then, it is preferable that the lift pins 26a arrange the four corners Sc of the substrate S at the irradiation positions P3 of the laser irradiation sections 29.

‧The laser irradiation unit 29 may irradiate the laser light L on the end surface Se1 of the substrate S at a position different from the corner portion Sc of the substrate S. In other words, the lift pin 26a may arrange the portion of the end surface Se1 of the substrate S that is different from the corner portion Sc of the substrate S at the irradiation position P3. Even with such a configuration, the effects like (1), (2), and (4) to (6) described above can be obtained.

‧The laser irradiation unit 29 can also be a linear light source. Even with such a configuration, the effects like (1), (3), and (4) to (6) above can be obtained.

‧In addition to the corner Sc of the end surface Se1 of the substrate S irradiated with the laser light L, a part of the end surface Se1 may also be the lead-out portion So. In this configuration, the imaging unit 27 only needs to take a picture of the substrate S The corner Sc of the laser beam L and the derivation unit So may be used. Thereby, the imaging unit 27 can monitor the portion of the end surface Se1 of the substrate S that is captured by the imaging unit 27 at least.

In addition, when a part of the end surface Se1 of the corner portion Sc is the leading portion So, the laser irradiation unit 29 preferably includes a position changing mechanism for changing the irradiation position of the laser light L on the end surface Se1 of the substrate S. Thereby, the laser irradiation unit 29 can change the position of the lead-out portion So within the end surface Se1 of the substrate S by changing the irradiation position of the laser light L in the substrate S. Then, since the imaging range C of the imaging unit 27 includes the position of the lead-out portion So of the substrate S, the entire end surface Se1 of the substrate S can also be imaged in a high-brightness state.

In addition, even if all parts except the end surface Se1 of the corner portion Sc are the lead-out portion So, the laser irradiation portion 29 may be provided with a position changing mechanism.

‧The substrate S may have a shape other than a square shape, for example, may have a circular plate shape, and the substrate S may also have a belt shape extending in one direction. Even with this configuration, the effect as in (1) above can be obtained.

‧The imaging unit 27 is not limited to the upper wall of the chamber body 21, but can also be arranged in other positions in the chamber body 21, such as a side wall or a lower wall. In addition, the laser irradiation unit 29 is not limited to any of the four corners of the chamber body 21, and may be disposed at other positions in the chamber body 21, such as a side wall. The point is that as long as the imaging unit 27 is arranged so that at least a part of the end face Se1 disposed at the high-brightness position P5 is included in the imaging range C, and the laser irradiation unit 29 conforms to the direction in which the laser light L is irradiated to a different position from the imaging unit 27 Just make up.

‧When the laser irradiation unit 29 irradiates the substrate S with the laser light L, the posture of the substrate S can also be held by the substrate stage 24. In such a configuration, the substrate stage 24 is an example of an arrangement portion. However, the substrate stage 24 maintains the posture of the substrate S while the back surface of the substrate S is in contact with the installation surface 24a As a result, the laser beam L irradiated by the laser irradiation unit 29 is also easily irradiated to the substrate stage 24. Accordingly, since the portion other than the end surface Se1 of the substrate S has the same brightness as the end surface Se1 of the substrate S, the monitoring unit 31 is likely to mistake the portion other than the end surface Se1 as the end surface Se1. In this regard, when the laser irradiation portion 29 irradiates the substrate S with the laser light L, the posture of the substrate S is preferably held by the lift pins 26a in a state separated from the installation surface 24a of the substrate stage 24.

‧When the laser irradiation unit 29 irradiates the laser light L to the substrate S held by the substrate stage 24, the posture of the substrate stage 24 may be a horizontal posture or an upright posture. That is, the laser irradiation unit 29 may be configured to irradiate the laser light L to the substrate S held on the substrate stage 24 in a substantially horizontal state, or may irradiate the substrate held on the substrate stage 24 in a substantially vertical state. S is formed by irradiating laser light L.

In addition, the substrate stage 24 may have any configuration as long as the substrate S is arranged within the imaging range of the imaging unit 27. Then, as long as the laser irradiation unit 29 irradiates the laser light L to the substrate S disposed within the imaging range, the laser light L is scattered on the end surface Se1, and the end surface Se1 image is formed on the imaging unit as an imaging result 27 The light-receiving surface is constructed in such a way that the effect (1) above can be obtained.

‧When the laser irradiation unit 29 irradiates the substrate S with the laser light L, the posture of the substrate S can also be maintained by the transfer robot 15. In such a configuration, the transport robot 15 is an example of an arrangement part. However, like the substrate stage 24, the transfer robot 15 maintains the posture of the substrate S in contact with the back surface of the substrate S. Therefore, for the same reason as when the substrate stage 24 is the arrangement portion, the posture of the substrate S is preferably held by the lift pins 26a.

‧As long as the imaging unit 27 can maintain the imaging function, the imaging unit 27 can also be arranged inside the chamber body 21.

‧ When the distance between the imaging unit 27 and the substrate stage 24 is as small as the imaging range C of the imaging unit 27 includes only a part of the end surface Se1 of the substrate S, the imaging unit 27 should preferably have an angle changing mechanism that can change the imaging range C from The imaging section 27 has an imaging angle of an angle formed by the imaging direction of the incident light direction and the normal line of the substrate S. The angle changing mechanism may have a configuration that can change the imaging angle within a range of 0° or more and 90° or less, for example. In such a configuration, the imaging unit 27 can change the imaging angle and image the end surface Se1 of the substrate S, and the imaging unit 27 can image the entire end surface Se1 of the substrate S.

‧ The imaging unit 27 may be provided with a position changing mechanism that can change the position of the imaging unit 27 on the chamber body 21, instead of the above-mentioned angle changing mechanism. The position changing mechanism can change the position included in the imaging range C of the imaging section 27 of the substrate S by changing the position of the imaging section 27. In addition, the imaging unit 27 may include both an angle changing mechanism that changes the imaging angle and a position changing mechanism.

‧As long as the laser irradiation unit 29 can maintain the function of irradiating the laser light L, it can also be arranged inside the chamber body 21.

‧The monitoring unit 31 can also determine whether the end surface Se1 of the substrate S is damaged by the first method described below. That is, in the substrate monitoring method described in the first embodiment, the monitoring unit 31 calculates an approximate curve along the end surface Se1 of the substrate S as a linear function, that is, a straight line, based on the position information of the high-brightness portion obtained on each detection line , Set it to an approximate straight line corresponding to the outer edge of the substrate S. Then, when at least a part of the approximate straight line is not in the region sandwiched by the two reference lines, the monitoring unit 31 determines that the end surface Se1 of the substrate S is damaged.

‧ Further, the monitoring unit 31 can also determine whether the end surface Se1 of the substrate S is damaged by the second method described below. That is, the monitoring unit 31 sets two reference lines parallel to the approximate straight line based on the approximate straight line corresponding to the outer edge of the substrate S, and sandwiches the two reference lines sandwiching the approximate straight line in the direction orthogonal to the approximate straight line . The 2 reference lines consist of the first line and the second line, the first line and the second line The two lines are away from the specified value in the direction orthogonal to the approximate straight line, respectively.

Then, the monitoring unit 31 determines that the end surface Se1 of the substrate S is damaged when the specified number or more of the positions where the brightness is high is not within a region sandwiched by these two reference lines.

In this second method, when the position of the outer edge of the substrate S is within the imaging range, especially when the image processing range of a part of the imaging range is unstable, the deviation of the position of the substrate S from the reference substrate outline position is used to determine This is effective when the deviation of damage to the end surface Se1 of the substrate S is large to the same degree.

In this case, as in the method described in the first embodiment and the first method, even if the monitoring unit 31 sets the position of the outer edge of the substrate of the reference and accordingly sets two reference lines in advance, it may still be judged as the substrate S The deviation of the position from the reference substrate outline position is due to damage to the end face Se1.

Conversely, in the second method, since two reference lines are set based on an approximate straight line corresponding to the outer edge of the substrate S, it is possible to suppress the erroneous judgment that the deviation of the position of the substrate S is the damage on the end surface Se1 of the substrate S.

In addition, when the position of the substrate S is not stable within the imaging range, for example, when the horizontal position on the substrate S supported by the lift pin 26a is changed within the imaging range by the elevation of the substrate S. Also, for example, when the position of the substrate S is not stable within the imaging range, when the substrate S is carried into the sputtering chamber 13 by the transfer robot 15, the position of the substrate S is higher than the position of the lift pin 26a and the frequency of deviation from the reference position is high Wait.

‧The monitoring unit 31 may also be implemented in combination with the method described in the first embodiment, the first method, and the second method. Of the three methods, when it is determined by two or more methods that the end surface Se1 of the substrate S is not damaged, It is determined that the end surface Se1 of the substrate S is not damaged. In this way, determining whether there is damage on the end surface Se1 by combining a plurality of methods can reduce the probability of erroneous judgment due to factors such as unstable position of the substrate S and erroneously detected high-luminance positions. As a result, when combining multiple methods, the basis can be judged more correctly Is there any damage on the end face Se1 of the board S?

In addition, the monitoring unit 31 may be implemented by combining any two methods of the method described in the first embodiment, the first method, and the second method. In this case, when it is determined by two methods that the end surface Se1 of the substrate S is not damaged, it can be determined that the end surface Se1 of the substrate S is not damaged. Even with such a configuration, it is still possible to determine whether there is damage on the end surface Se1 of the substrate S by one method, reducing the probability of erroneous judgment.

‧ Components that constitute the substrate monitoring device, and are components other than the monitoring unit 31, that is, the imaging unit 27, the laser irradiation unit 29, and the disposition unit may also be disposed in the transfer chamber 11 or the load lock chamber 12, instead of the sputtering chamber 13 . Alternatively, as long as the sputtering apparatus 10 is configured to include other processing chambers, elements other than the monitoring section 31 in the substrate monitoring apparatus may be disposed in other processing chambers.

‧The substrate monitoring device is not limited to the sputtering device 10, but can also be applied to a vapor deposition device that forms a film by vapor deposition on the substrate S, a CVD device that forms a film using the CVD method on the substrate S, and an etching device that etches the substrate S, etc. Various substrate processing devices.

‧The configuration of the above-mentioned first embodiment and the configuration of various modifications can also be implemented in appropriate combination.

[Second embodiment]

The second embodiment in which the substrate monitoring device is applied to the sputtering device will be described with reference to FIGS. 12 to 16. The sputtering device of the second embodiment is different from the sputtering device of the first embodiment in the way of irradiating the substrate with laser light. Therefore, the differences between the first embodiment and the first embodiment will be described in detail below. In addition, the same symbols as in the first embodiment will be given to the common configuration to the first embodiment, and the explanation will be omitted.

In addition, the structure of the sputtering chamber, the function of the sputtering device, and the substrate monitoring method are described in order below.

[Composition of sputtering room]

The structure of the sputtering chamber 13 will be described with reference to the twelfth to fifteenth figures. In addition, in the illustration of FIG. 13, expediently, the substrate S is shown with a solid line; and the imaging unit located above the substrate S and both are located outside the sputtering chamber 13.

As shown in FIG. 12, when the sputtering chamber 13 is viewed from above, four imaging units 51 and four laser irradiation units 52 are provided on the upper wall 21 e of the chamber body 21 and outside the chamber body 21. Four imaging windows 21b and one irradiation window 21c are formed on the upper wall 21e of the chamber body 21. Among the four imaging windows 21b, two imaging windows 21b also function as irradiation windows 21c, respectively. The direction parallel to the gravity direction is the Z direction, and each imaging window 21b and each irradiation window 21c penetrate the upper wall 21e along the Z direction.

Each imaging unit 51 and each laser irradiation unit 52 overlap a part of the substrate S in the Z direction. One direction orthogonal to the Z direction is the X direction, and the direction orthogonal to the X direction is the Y direction. The substrate S has a rectangular shape expanding along the X direction and the Y direction. When the sputtering chamber 13 is viewed from above, the substrate S has an edge Se2 having a rectangular frame shape. The edge Se2 of the substrate S and the end surface Se1 of the substrate S constitute an end Se of the substrate S. The edge Se2 of the substrate S includes a part of the surface of the substrate S that is outside the surface and inside the outer edge, and the edge Se2 is, for example, a region from the outside of the surface to an inside part of about several tens of mm.

Each laser irradiation part 52 irradiates the laser light L toward a part of the end Se of the substrate S, and at the end Se of the substrate S, the irradiated part of each laser irradiation part 52 and the rest of the laser irradiation part 52 are irradiated The Ministry is different from each other. In the end portion Se of the substrate S, two portions extending in the X direction are irradiated with laser rays L by laser irradiation portions 52 different from each other. In the end Se of the substrate S, two parts extending in the Y direction are respectively laser beams 52 which are different from each other and are not irradiated with laser light L by the part extending in the X direction in the end Se The irradiation unit 52 irradiates the laser light L.

As shown in FIG. 13, when viewed in a plane opposite to the surface of the substrate S, the substrate S is equally divided into a first region R1, a second region R2, a third region R3, and a fourth region R4. In the substrate S, the first region R1 and the second region R2 are juxtaposed along the Y direction, and the third region R3 and the fourth region R4 are juxtaposed along the Y direction. In the substrate S, the first region R1 and the third region R3 are aligned in the X direction, and the second region R2 and the fourth region R4 are aligned in the X direction.

When viewed in a plane opposite to the surface of the substrate S, a part of each area overlaps with one imaging unit 51. Each imaging unit 51 has a designated imaging range C, and the lift pins 26a are arranged in the substrate S such that at least the entire end Se of the substrate S is included in the imaging range C in an area overlapping the imaging units 51 in the substrate S .

As shown in FIG. 14, each laser irradiation unit 52 irradiates the laser light L to the end portion Se of the substrate S in the substrate S arranged in the imaging range C. As a result, the laser irradiation unit 52 reflects and scatters the laser light L at the end Se of the substrate S, and forms an image of the end Se on the light receiving surface of the imaging unit 51.

Of the plurality of laser irradiation sections 52, the laser irradiation section 52 that irradiates the laser light L toward the end Se extending in the X direction, the greater the distance between the Z direction and the irradiation opening 52a, the more the laser along the X direction The wider the irradiation width W, the wider the ray L is. Thereby, the laser irradiation portion 52 irradiates the entire portion of the end portion Se of the substrate S extending in the X direction with the laser light L having a strip shape extending along the end Se of the substrate S. The irradiation width W of the laser light L is the length of the part extending along the X direction at the end Se.

When the laser irradiation section 52 is used, the portion of the end portion Se of the substrate S where the image is formed on the light-receiving surface of the imaging section 51 expands the portion of the laser beam L extending in a strip shape.

As shown in Figure 15, the Z direction is the normal direction on the surface of the substrate S, and In the direction in which the normal direction of the installation surface 24a of the substrate stage 24 is parallel to the laser light L, the angle formed by the direction in which the laser light L extends and the Z direction is the irradiation angle θ. The irradiation angle θ is greater than 0° and less than 90°. That is, the laser irradiation portion 52 irradiates the laser light L toward the end Se in a direction not parallel to the Z direction.

When such a laser irradiation portion 52 is used, a portion of the laser light L irradiated toward the end portion Se of the substrate S is prevented from being irradiated to the portion of the lift pin 26a that overlaps the end portion Se of the substrate S in the Z direction and the substrate stage 24 The portion overlapping the end S of the substrate S in the Z direction. Therefore, it is possible to suppress an increase in the brightness of the portion other than the substrate S in the image captured by the imaging unit 51, and to prevent the portion other than the substrate S from being mistaken for the end Se of the substrate S.

In addition, when the above-mentioned laser irradiation unit 52 is used, compared with the configuration in which the laser light L is irradiated toward the end portion Se of the substrate S along the Z direction, the distance between the irradiation port 52a in the Z direction and the end portion Se of the substrate S is not increased The distance between the irradiation port 52a and the end Se of the substrate S can be increased. Therefore, the irradiation width W of the laser light L irradiated on the position of the end Se of the substrate S can be increased.

[The role of sputtering equipment]

The function of the sputtering device 10 will be described with reference to the sixteenth and seventeenth figures. In the following, the substrate S is a substrate that is transparent to the laser light L, and the role of the substrate S before the film formation is irradiated with the laser light L.

As shown in FIG. 16, a part of the laser light L irradiated toward the end Se of the substrate S is irradiated on the edge Se2 of the substrate S and reflected by the edge Se2 of the substrate S. In addition, the other part of the laser light L irradiated toward the end Se of the substrate S passes through the inside of the substrate S from the edge Se2 of the substrate S, and is led out from the end Se1 of the substrate S. As described above, since the end surface Se1 of the substrate S has a surface thickness that can scatter the laser light L, the laser light L is scattered when it is derived from the end surface Se1 of the substrate S.

Therefore, in the laser light L, the image of the end portion Se of the substrate S is formed on the imaging portion 51 by the laser light L reflected by the edge Se2 of the substrate S and the laser light L scattered by the end surface Se1 of the substrate S Receiving surface.

Therefore, the position of the imaging unit 51 only needs to be a position where an image is formed on the light-receiving surface of the imaging unit 51 by reflection and scattering of the laser light L at the end Se of the substrate S, so for the position of the laser irradiation unit 52, The position of the imaging unit 51 is not limited to one position. Therefore, the degree of freedom of the position of the imaging unit 51 with respect to the position of the laser irradiation unit 52 can be increased.

In addition, the laser light L irradiated on the substrate S passes through the inside of the substrate S from the edge Se2 of the substrate S and is scattered on the end surface Se1. Therefore, the brightness of the portion other than the portion irradiated by the laser light L in the end Se of the substrate S can be improved.

As shown in FIG. 17, the end surface Se1 of the substrate S also sometimes has a curved surface that protrudes outward from the edge Se2 of the substrate S. In this configuration, among the laser rays L irradiated on the end Se of the substrate S, the laser rays L irradiated on the edge Se2 of the substrate S are reflected, and a part of the laser rays L irradiated on the end surface Se1 of the substrate S are also reflected . Among them, the laser light L irradiated on a part of the end surface Se1 of the substrate S is emitted as scattered light from the end surface Se1 because of the surface thickness of the end surface Se1.

In addition, when the end surface Se1 of the substrate S protrudes beyond the outer curved surface, when the laser light L is irradiated on the end surface Se1 of the substrate S, compared with when the laser light L having the same width is irradiated on the flat portion of the substrate S, the laser The area illuminated by the light L expands. Therefore, since the probability of reflection and scattering of the laser light L increases, it is easy to obtain a portion with high brightness in the imaging result.

In addition, in the substrate S shown in FIG. 17, part of the laser light L irradiated on the edge Se2 of the substrate S is transmitted through the inside of the substrate S from the substrate, similar to the substrate S described above with reference to FIG. 16. The end face Se1 of S is derived.

[Substrate monitoring method]

The substrate monitoring method in the second embodiment is the same as the substrate monitoring method in the above-described first embodiment, and the substrate S fixed in the sputtering chamber 13 can be imaged by each imaging unit 51. In this case, each laser irradiation unit 52 irradiates the laser light L to the substrate S arranged at a predetermined position by the lift pins 26 a, and forms an image of the end portion Se of the substrate S on the light-receiving surface of the imaging unit 51. Then, each imaging unit 51 generates an image from the partial image included in the imaging range C from the end Se of the substrate S.

In addition, each laser irradiation unit 52 may irradiate the laser light L to the end Se of the substrate S substantially simultaneously, or may irradiate the laser light L to the end Se at different times from each other. In addition, each imaging unit 51 only needs to capture the end portion Se while the laser irradiation unit 52 irradiates the laser light L to the end portion Se of the substrate S included in the imaging range C of each imaging unit 51.

The monitoring unit 31 generates an image including the entire end Se of the substrate S based on the images generated by the imaging units 51. Then, based on the generated image, the monitoring unit 31 determines whether the end Se of the substrate S is damaged by the same method as the first embodiment described above.

In addition, the substrate monitoring method in the second embodiment is the same as the substrate monitoring method in the first modification described above, and each imaging unit 51 can also image the substrate S moving from the raised position toward the installation position, and is arranged at A plurality of substrates S at different positions in the Z direction.

As described above, when the second embodiment of the substrate monitoring device and the substrate monitoring method is adopted, the effects described below can be obtained.

(7) As long as the position of the imaging unit 51 is the position where an image is formed on the light-receiving surface of the imaging unit 51 at the end Se of the substrate S by reflected light and scattered light of the laser light L, the laser The position of the irradiation unit 52 and the position of the imaging unit 51 are not limited to one position. Therefore, the camera can be improved The degree of freedom of the position of the portion 51 with respect to the position of the laser irradiation portion 52.

(8) The laser light L irradiated on the substrate S passes through the inside of the substrate S and is scattered on the end surface Se1. Therefore, the brightness of the portion other than the portion irradiated with the laser light L in the end Se of the substrate S can be improved.

(9) Among the end portions Se of the substrate S, the portion where the image is formed on the light-receiving surface of the imaging unit 51 expands the portion where the laser light L extends in a strip shape.

[Modification of Second Embodiment]

In addition, the above-mentioned second embodiment can also be implemented with appropriate changes as follows.

‧The laser irradiation unit 52 may also have a configuration in which the irradiation width W of the laser light L is the same in the entire Z direction. Even with such a configuration, as long as the laser light L has a band shape, the effect as described in (9) above can be obtained.

‧The irradiation width W of the laser light L may be smaller than the width of the end Se along the X direction, or may be smaller than the width of the end Se along the Y direction. In such a configuration, it is only necessary to irradiate the laser light L with a plurality of laser irradiating parts to one part extending along the X direction or one part extending along the Y direction at the end Se of the substrate S.

Alternatively, the laser irradiation unit 52 may have a mechanism that can change the irradiation direction of the laser light L. By changing the mechanism to change the position of the laser light L irradiated in the end Se, the entire end Se can be irradiated with laser The composition of the ray L. In addition, in such a configuration, it is only necessary to capture the image of the end Se by the imaging unit 51 each time the irradiation direction of the laser light L changes.

‧The number of imaging units 51 can be 3 or less, or 5 or less. The point is that as long as the images captured by the imaging units 51 can be synthesized to form images corresponding to the entire end Se, the number of imaging units 51 is not limited.

‧The number of laser irradiation parts 52 can be less than 3 or less than 5. The point is that as long as the entire end Se of the substrate S can be irradiated with the laser light L, the number of the laser irradiation parts 52 is not limited. In addition, when the laser beam L cannot be irradiated to the entire end Se of the substrate S in the state where the position of the laser irradiation section 52 is fixed, the laser irradiation section 52 may be provided with a position capable of changing the laser irradiation section 52 to the sputtering chamber 13 The location change mechanism. Alternatively, as described above, the laser irradiation unit 52 may be provided with a changing mechanism that changes the irradiation direction of the laser light L.

‧The irradiation angle θ of laser light L can also be 0°. That is, the laser irradiation unit 52 may be configured to irradiate the laser light L toward the end Se of the substrate S along the Z direction. Even with this configuration, the image of the end Se of the substrate S can be formed on the light-receiving surface of the imaging unit 51.

‧When the film formed on the substrate S is a light-transmissive film, even if the laser light L is irradiated on the substrate S after the film formation, it can still be on the end including the substrate S, that is, the edge of the film The portion where the Z direction overlaps the edge Se2 of the substrate S, the end surface of the film, and the portion of the end surface Se1 of the substrate S reflect or scatter the laser light L.

‧As shown in the eighteenth figure, when the film formed on the substrate S is a metal film M, as compared with the substrate S having light permeability, it is at the edge Me2 of the metal film M and is at the edge Se2 of the substrate S in the Z direction The amount of laser light reflected by the overlapping portion becomes larger, and the reflected light can be used to form an image on the light-receiving surface of the imaging unit 51.

At this time, although the laser light L is reflected at the edge Me2 of the metal film M, the portion where the substrate S does not exist does not reflect the laser light L. Therefore, among the light received by the imaging unit 51, there is a large difference in the amount of light received by the imaging unit 51 between the light from the edge Me2 of the metal film M and the light from the outside of the edge Me2, thereby, in the imaging result, The boundary between the part with high brightness and the part with low brightness is clear.

‧When the film formed on the substrate S is a metal film, sometimes the metal film is formed in The thickness of the portion Se2 of the substrate S is smaller than the thickness of the portion formed on the other portion of the substrate S. In the metal film, when the thickness of the portion overlapping with the edge Se2 of the substrate S is as small as passing the laser light L, the light passes through the inside of the substrate S from the edge Se2 of the substrate S, and the laser light is derived from the end surface Se1 of the substrate S L.

‧Similar to the first embodiment, when the laser irradiation section 52 irradiates the substrate S with the laser light L, the posture of the substrate S can also be held by the substrate stage 24. At this time, the posture of the substrate stage 24 may be a horizontal posture or an upright posture. That is, the laser irradiation unit 52 may be configured to irradiate the laser beam L to the substrate S supported on the substrate stage 24 in a substantially horizontal state, or may irradiate the substrate supported on the substrate stage 24 in a substantially vertical state. S is formed by irradiating laser light L.

13‧‧‧Sputter room

14‧‧‧Cathode

21‧‧‧room body

21c‧‧‧Irradiation window

21d‧‧‧Inner wall

24‧‧‧ substrate carrier

24a‧‧‧Setting surface

26a‧‧‧Lift pin

27‧‧‧Camera Department

28‧‧‧Fixture

29‧‧‧Laser exposure department

29a‧‧‧Irradiation port

L‧‧‧Laser light

La‧‧‧optic axis

P2‧‧‧Target position

P3‧‧‧irradiated position

P4‧‧‧Export location

S‧‧‧Substrate

Sc‧‧‧Corner

Se1‧‧‧End

So‧‧‧Export Department

Claims (12)

A substrate monitoring device comprising: an imaging unit having a light-receiving surface that receives light from a specified imaging range; an arrangement unit configured to arrange a substrate within the imaging range; an irradiation unit configured to be arranged within the imaging range The substrate irradiates laser light; and a monitoring section monitors the imaging result; the substrate has a square shape; the irradiation section irradiates the laser light to at least one of the four corners of the substrate, the laser light Derived from an end portion of the substrate that is different from the portion where the laser light is introduced; the disposition portion disposes the entire substrate within the imaging range; the imaging portion expands from the substrate disposition by the disposition portion Is formed on the light-receiving surface as an imaging result of the image of the end portion due to the scattered light of the laser light generated at the end portion of the substrate. A substrate monitoring device according to claim 1 of the patent application, wherein the imaging unit is caused by the scattered light of the laser light scattered at the end portion of the substrate due to the irradiation of the laser light on the substrate by the irradiation unit The image at the end is formed on the light-receiving surface as a result of imaging. A substrate monitoring device as claimed in item 1 of the patent application, which further includes a substrate stage having an installation surface on which the substrate is installed; and an elevating mechanism that causes the substrate to contact the installation by raising and lowering the arrangement section Face The installation position changes the position of the substrate between the upward position where the substrate is separated from the installation surface upwards; the monitoring section when the substrate is in the installation position, when the substrate is in the elevated position, and the substrate When moving between the installation position and the ascending position, in at least one of these cases, it is determined whether the end portion of the substrate is damaged based on the imaging result obtained from the imaging portion. A substrate monitoring device according to item 3 of the patent application range, wherein the monitoring unit completes determining whether the end of the substrate is damaged while the substrate is moving between the installation position and the ascent position. A substrate monitoring device as claimed in item 2 of the patent application range, wherein the imaging unit irradiates the substrate with the laser light so that the reflection part in the substrate passes through the substrate and is scattered at the end by reflection The image of the end portion caused by the scattered light of the laser light is formed on the light receiving surface as a result of imaging. The substrate monitoring device according to any one of the items 1 to 5 of the patent application range, wherein the aforementioned irradiating part is a point light source. The substrate monitoring device according to any one of claims 1 to 5, wherein the irradiation portion irradiates the end portion with the laser light having a belt shape extending along the end portion. A substrate monitoring method comprising: an irradiation step by irradiating a substrate arranged within an imaging range of an imaging unit The laser beam generates scattered light of the laser beam at the end of the substrate, and the image of the end is formed on the light-receiving surface of the imaging section as an imaging result; the imaging process is to photograph the end; and monitor A process that monitors the imaging results; the substrate has a square shape; the irradiation step includes irradiating the laser light to at least one of the four corners of the substrate, the laser light from the end of the substrate Is derived from a location different from the location where the laser light is introduced; the imaging step includes imaging the entire substrate within the imaging range from the direction opposite to the plane where the substrate expands. For example, in the method of monitoring a substrate according to item 8 of the patent application, the irradiating part irradiating the aforementioned laser light is a point light source. For example, in the substrate monitoring method of claim 9, the diameter of the irradiation port of the irradiation section is larger than the thickness of the substrate. For example, the substrate monitoring method of claim 8 of the patent application, wherein the substrate can be raised and lowered between the installation position in contact with the installation surface of the substrate stage and the ascending position away from the installation surface; the monitoring process includes, when When the substrate is in the installation position, the substrate is in the ascending position, and the substrate is moving between the installation position and the ascending position, at least one of the cases is based on the imaging result obtained from the imaging section To determine the aforementioned substrate Is there any damage to the aforementioned ends? A substrate monitoring method according to claim 11 of the patent application, wherein the monitoring step includes, during the period when the substrate is moving between the installation position and the ascending position, determining whether the end of the substrate is damaged.

Images