KR101981182B1 - Substrate monitoring device and substrate monitoring method - Google Patents

Abstract

By irradiating the laser beam L onto an imaging section 27 having a predetermined imaging range, a disposing section 26a for disposing the substrate S within the imaging range, and a substrate Sc (Se1) disposed within the imaging range, An irradiating unit 29 configured to generate at least one of the reflected light and the scattered light of the laser beam at the end portion So (Se1) of the substrate to form an image of the end Se1 on the light receiving surface of the image pickup unit 27, And a monitoring section for monitoring the image pickup result of the image pickup section 27.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a sub-

The present invention relates to a substrate monitoring apparatus and a substrate monitoring method for monitoring a substrate.

BACKGROUND ART [0002] In a manufacturing process of a flat panel display, a substrate monitoring apparatus for detecting cracks or cracks in a substrate on which devices, wiring, and the like are formed is used. The substrate monitoring apparatus includes an irradiating unit for irradiating a laser beam from above the substrate to the substrate and an imaging unit facing the irradiating unit, and the irradiating unit and the imaging unit are positioned via the substrate. The imaging unit receives the transmitted light transmitted through the substrate and the non-transmitted light reaching the imaging unit without passing through the substrate, and the substrate monitoring apparatus detects cracks or cracks in the substrate based on the difference in the intensity of the transmitted light and the transmitted light , Patent Document 1).

[Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-149800

However, in order to detect cracks or cracks in the substrate, it is necessary for the image pickup unit to receive both the transmitted light and the non-transmitted light, so that the position of the image pickup unit is set such that one image pickup unit is positioned on the optical path of the transmitted light and the non- Is a major constraint.

An object of the present invention is to provide a substrate monitoring apparatus and a substrate monitoring method capable of increasing the degree of freedom of the position of the imaging section with respect to the position of the irradiation section.

In order to solve the above problems, a substrate monitoring apparatus includes an imaging section having a light receiving surface for receiving light from a predetermined imaging range, a disposing section for disposing the substrate within the imaging range, A reflecting unit configured to generate at least one of reflected light and scattered light of the laser beam at an end of the substrate by irradiating the laser beam to form an image of the end on the light receiving surface as an image pickup result; And the like.

A substrate monitoring method for solving the above problems is characterized in that at least one of reflected light and scattered light of the laser beam is generated at an end portion of the substrate by irradiating a laser beam on a substrate disposed within an imaging range of the imaging portion, An image pickup step of picking up the end portion, and a monitoring step of monitoring the image pickup result.

According to the above-described configuration, since the position of the image pickup unit is a position surface where an image is formed on the light-receiving surface of the image pickup unit by at least one of the reflected light and the scattered light of the laser beam at the end portion of the substrate, As shown in FIG. Thus, the degree of freedom of the position of the imaging unit with respect to the position of the irradiation unit can be increased.

In the substrate monitoring apparatus, the irradiating unit is configured to irradiate the laser beam onto the substrate, transmit the laser beam through the substrate, and scatter the laser beam at the end.

According to the above-described substrate monitoring apparatus, a laser beam reflected on a substrate passes through the inside of the substrate and is scattered at the end. This makes it possible to increase the brightness of the portion of the substrate other than the portion where the laser beam hits.

In the above substrate monitoring apparatus, the irradiating unit is configured to irradiate the laser beam onto the substrate, transmit the laser beam through the substrate through reflection in the substrate, and scatter the laser beam at the end .

According to the substrate monitoring apparatus, since the laser beam is reflected in the substrate and penetrates the inside of the substrate to the end of the substrate, an image of the end of the substrate can be formed on the light receiving surface of the image pickup section.

In the above substrate monitoring apparatus, the end portion of the substrate includes an end face of the substrate, and the irradiation portion introduces the laser beam into the substrate from the end face by abrading the laser beam on the end face, The laser beam having an optical axis set so that the laser beam is led out from a portion different from a portion into which the laser beam is introduced in the cross section is irradiated toward a position different from the image pickup portion.

In the monitoring method, the end portion of the substrate includes a cross section of the substrate, and the laser beam is introduced into the cross section by irradiating the cross section with the laser beam in the irradiating process, The laser beam having the optical axis set so that the laser beam is led out from a site different from the site where the laser beam is introduced is irradiated toward a position different from the image pickup section.

According to the above-described configuration, the lightness of the cross section of the substrate is obtained in the image picked up by the image pickup section in a state where the lightness of the portion other than the cross section in the substrate is higher than the lightness of the arrangement portion for holding the substrate. In addition, since the irradiation unit may be configured to irradiate a laser beam toward a position different from the image pickup unit, it is possible to monitor the state of the cross section based on the brightness of the cross section of the substrate in a state where the degree of freedom of the position of the image pickup unit with respect to the position of the irradiation unit is increased. can do.

In the substrate monitoring apparatus, the irradiation unit is a point light source.

In the substrate monitoring method, the irradiating unit for irradiating the laser light source is a point light source.

According to the above-described configuration, since the irradiating unit is a point light source, if the light amount of the laser beam output by the irradiating unit is the same, the light amount per unit area at the portion where the laser beam touches the end face of the substrate becomes larger than that of the linear light source. Accordingly, the amount of light when the light introduced into the substrate is led to the outside of the substrate becomes large. As a result, the difference between the brightness of the cross section of the substrate and the brightness of the other portions of the substrate and the brightness of the arrangement portion becomes large.

In the above substrate monitoring apparatus, the irradiating unit reflects the laser beam having a band shape extending along the end portion on the end portion.

According to the above-described substrate monitoring apparatus, a portion formed on the light-receiving surface of the image pickup unit among the end portions of the substrate is spread by the amount that the laser beam extends in a strip shape.

In the substrate monitoring method, the substrate has a rectangular shape, and at least one of the four corners of the substrate is irradiated with the laser beam in the irradiation step.

According to the substrate monitoring method, a laser beam is incident on the substrate from a direction tilted with respect to two directions, that is, a direction in which the substrate is diffused. Thus, as compared with the configuration in which the laser beam is incident on the substrate in a direction orthogonal to one of the directions in which the substrate is diffused and parallel to the other side, the laser beam introduced into the substrate is reflected inside the substrate, Area. As a result, a portion occupied by a portion irradiated with the laser beam in the cross section of the substrate becomes large.

In the above substrate monitoring method, the diameter of the irradiation port of the irradiation unit is larger than the thickness of the substrate.

According to the above-described substrate monitoring method, the laser beam easily touches the entire thickness direction in cross section, as compared with the configuration in which the diameter of the irradiation port is equal to or less than the thickness of the substrate. As a result, the amount of light introduced into the substrate from the end face of the substrate becomes large, so that the amount of laser light emitted from the end face of the substrate to the outside of the substrate becomes large.

1 is a block diagram showing a schematic structure of a sputtering apparatus in a first embodiment in which a substrate monitoring apparatus is applied to a sputtering apparatus.
2 is a block diagram schematically showing the structure of the inside of the sputtering apparatus together with the substrate.
3 is a block diagram schematically showing a structure in which the inside of the sputtering apparatus is viewed from the direction opposite to the substrate.
4 is a block diagram schematically showing the relationship between the position of the irradiation port and the position of the end face of the substrate provided in the laser irradiation unit and the relationship between the transmission path of the laser beam and the imaging direction of the imaging unit.
Fig. 5 is a block diagram for explaining the imaging range of the imaging unit. Fig.
6 is a block diagram for explaining an electrical configuration of the sputtering apparatus.
7 is a flowchart for explaining a procedure of a process in one embodiment embodying a substrate monitoring method.
8 is a flowchart for explaining an example of the operation of the sputter chamber.
9 is a view for explaining the operation of the sputtering apparatus.
10 is a diagram schematically showing a state in which light is scattered in the cross section of the substrate.
11 is a process diagram for explaining an imaging process according to a modified example.
12 is a plan view showing a planar structure of the sputter chamber of the second embodiment in which a substrate monitoring apparatus is applied to a sputtering apparatus as viewed from above.
13 is a diagram schematically showing the relationship between the substrate supported by the lift pins and the imaging range of the imaging section.
14 is a diagram showing a state in which the laser irradiation unit irradiates the laser beam to the end portion of the substrate.
15 is a diagram showing a state in which the laser irradiation unit irradiates the laser beam to the end portion of the substrate.
16 is a diagram schematically showing a state in which a laser beam is reflected and scattered at an end portion of a substrate.
17 is a diagram schematically showing a state in which a laser beam is reflected at an end portion of a substrate.
18 is a diagram schematically showing a state in which a laser beam is reflected at an end portion of a substrate according to a modification.

Example  One

A first embodiment in which the substrate monitoring apparatus according to the first embodiment and the substrate monitoring method in which the substrate monitoring apparatus is applied to the sputtering apparatus will be described with reference to FIGS. 1 to 10. FIG. Hereinafter, the structure of the sputtering apparatus, the structure of the sputtering chamber, the substrate monitoring method, and the operation of the sputtering apparatus will be sequentially described.

Sputter  Configuration of the device

The configuration of the sputtering apparatus will be described with reference to Fig.

1, the sputtering apparatus 10 includes a single transfer chamber 11, two load lock chambers 12 connected to the transfer chamber 11, and a plurality of load lock chambers 12 connected to the transfer chamber 11 Two sputter chambers 13 are provided. A gate valve is disposed between each of the load lock chambers 12 and the transfer chamber 11 and between each of the sputter chambers 13 and the transfer chamber 11. Each gate valve corresponds to the transfer chamber 11 The chamber is switched between a communicating state and a non-communicating state.

The load lock chamber 12 transfers the substrate S to be processed in the sputtering apparatus 10 from the outside of the sputtering apparatus 10 into the inside of the sputtering apparatus 10 and further from the inside of the sputtering apparatus 10 And is taken out to the outside of the sputtering apparatus 10. The load lock chamber 12 opens the inside of the load lock chamber 12 to the atmosphere without communicating with the transfer chamber 11 when the substrate S is carried in and when the substrate S is carried out. On the other hand, the load lock chamber 12 communicates with the transfer chamber 11 when transferring the transferred substrate S to the transfer chamber 11 and transferring the transferred substrate S from the transfer chamber 11 A space is formed at a predetermined pressure together with the transfer chamber 11.

The sputtering apparatus 10 may have one load lock chamber 12 or three or more load lock chambers 12.

The sputter chamber 13 has a cathode 14 and forms a predetermined film on one side of the substrate S by a cathode 14. [ The film formed on the substrate S in the sputter chamber 13 may be a transparent conductive film such as an ITO film or an IGZO film or a metal film such as aluminum, copper, molybdenum, molybdenum tungsten, or titanium. Alternatively, the film formed on the substrate S in the sputter chamber 13 may be an oxide film such as silicon oxide or titanium oxide, or a compound film such as a nitride film such as titanium nitride. When the film is formed on the substrate S, the sputter chamber 13 forms a depressurized space with the same pressure as the inside of the conveying chamber 11 or with a pressure lower than the inside of the conveying chamber 11.

Each of the sputter chambers 13 may be provided with a cathode 14 for forming the same film as the remaining sputter chambers 13 on the substrate S. The sputter chambers 13 may be formed on the substrate S, And a cathode 14 may be provided. The sputtering apparatus 10 may have one sputter chamber 13 or three or more sputter chambers 13.

The transfer chamber 11 is provided with a transfer robot 15 for transferring the substrate S. The transfer robot 15 transfers the substrate S before film formation from the load lock chamber 12 to the sputter chamber 13 through the transfer chamber 11 and transfers the substrate S from the sputter chamber 13 through the transfer chamber 11 And transports the substrate S after film formation to the load lock chamber 12. [

The sputtering apparatus 10 also includes a pretreatment chamber for performing a treatment before forming the film on the chamber other than the above-described load lock chamber 12 and the sputter chamber 13, for example, a substrate S And a post-processing chamber for performing the post-treatment after the film is formed on the substrate.

Sputter Chamber  Configuration

2 to 5, the structure of the sputter chamber 13 will be described. 2 shows a part of the transfer chamber 11 connecting the sputter chamber 13 to the sputter chamber 13 for convenience of explanation. 2 shows the state of the substrate stage when the transfer robot 15 brings the substrate S into the sputter chamber 13 from the transfer chamber 11 by solid lines, The state of the substrate stage at the time of forming the film of FIG.

2, the sputter chamber 13 is provided with a chamber body 21 having a box shape, and one side wall of the chamber body 21 is provided with side entrance and exit openings 21a are formed. The semi-entry / exit port 21a is a hole passing through the side wall along the horizontal direction, and is a hole for carrying the substrate S in and out with respect to the inside of the chamber main body 21. [ The gate valve is disposed in the entrance port 21a and the gate valve is maintained in a state in which the sputter chamber 13 and the transfer chamber 11 are not communicated with each other so that the sputter chamber 13 13) in an airtight state. On the surface of the inner wall surface of the chamber main body 21 opposite to the side wall connected to the transfer chamber 11, the cathode 14 is positioned.

The cathode 14 includes a backing plate 22 and a target 23. The backing plate 22 is fixed to the chamber body 21 in the cathode 14 and the target 23 is fixed to the backing plate 22. [ The material for forming the target 23 is a material for forming any one of the above-mentioned films.

A substrate stage 24 on which the substrate S is placed is located inside the chamber main body 21. The substrate stage 24 has a rectangular plate shape and is provided with a placement surface 24a on which the substrate S is placed Respectively. The substrate stage 24 is connected to the posture changing section 25 for changing the posture of the substrate stage 24. [

The posture changing section 25 switches the posture of the substrate stage 24 between the horizontal posture and the standing posture. When the posture of the substrate stage 24 is in the horizontal posture, the substrate stage 24 is substantially parallel to the lower surface which is a part of the inner wall surface of the chamber body 21, and is substantially perpendicular to the target 23. On the other hand, when the posture of the substrate stage 24 is in the standing posture, the substrate stage 24 is substantially perpendicular to the lower surface, and the substrate stage 24 is substantially parallel to the target 23.

The horizontal posture of the posture of the substrate stage 24 is set such that the posture of the substrate S before the deposition is carried out into the sputter chamber 13 and the posture of the substrate S after the deposition of the substrate S are removed from the sputter chamber 13 ). On the other hand, the standing posture is the posture of the substrate stage 24 during the period when the film is formed on the substrate S before the film formation.

The sputter chamber 13 is provided with a lifting device 26 for changing the position of the substrate S relative to the placement surface 24a of the substrate stage 24. [ The elevating device 26 changes the position of the substrate S between the set position and the raised position. The substrate S is brought into contact with the mounting surface 24a of the substrate stage 24 while the substrate S is in the raised position, And is positioned at a predetermined distance from the placement surface 24a.

The elevating device 26 includes a plurality of elevating pins 26a and elevating mechanisms 26b. The lift pin 26a has a front end portion which contacts the substrate S. Each of the lift pins 26a is brought into contact with the substrate S to position the substrate S above the placement surface 24a and the position of the substrate S in the raised position, . The lift pin 26a is an example of the arrangement portion. The lifting mechanism 26b changes the position of the tip of the lifting pin 26a with respect to the lifting surface 24a of the substrate stage 24 along the gravity direction.

The elevating mechanism 26b is configured such that when the substrate S before film forming is transferred from the carrying robot 15 to the substrate stage 24 and when the film forming substrate S is transferred from the substrate stage 24 to the carrying robot 15 The lift pins 26a are raised so that the lift pins 26a support the substrate S in the raised position. When the position of the substrate S is changed from the raised position to the set position, the elevating mechanism 26b moves down the elevating pin 26a so that the leading end of the elevating pin 26a is moved to the position .

On the upper wall of the sputter chamber 13, an image pickup window 21b is formed. The imaging window 21b is composed of a transparent member having a predetermined permeability, which is fitted in an upper wall of the chamber body 21 through a hole passing through the gravity direction. An imaging section 27 having a predetermined imaging range is disposed at a position overlapping the imaging window 21b as the outside of the chamber main body 21. [

The image pickup section 27 is, for example, a CCD camera, a CMOS camera, or the like. The image pickup section 27 has a light receiving surface on which a plurality of light receiving elements are arranged. The image pickup section 27 recognizes, as an optical phase, an array of light intensities recognized by a plurality of light receiving elements. The image pickup section 27 images an optical image formed on the light-receiving surface of the image pickup section 27 into an electric signal, that is, an object that emits light toward the image pickup section 27.

The construction of the sputter chamber 13 will be further described with reference to Fig. Fig. 3 also shows a state in which a plurality of lift pins 26a in the state of the sputter chamber 13 hold the posture of the substrate S at the raised position. 3, the position of the imaging unit 27 disposed outside the chamber body 21 is shown by a broken line.

As shown in Fig. 3, the substrate stage 24 has a plurality of clamps 28, and each clamp 28 switches position between a retracted position and a fixed position. The clamp 28 is located at the retreat position when the substrate S is located at the raised position and is located at the fixed position when the substrate S is positioned at the mounting position, And is fixed to the mounting surface 24a.

The substrate S has a rectangular plate shape. The outer surface of the substrate S is formed of a surface on which a predetermined film is formed, a back surface which is a surface opposite to the surface, and a rectangular ring- As shown in Fig. The substrate S has a rectangular shape when viewed in a direction opposite to the surface. The four corners in the section Se1 of the substrate S are the corner portions Sc of the substrate S, respectively. Further, among the substrates S, the edge portion at the surface, the edge at the back surface, and the portion including the end face Se1 are the end portions of the substrate S.

The material for forming the substrate S is a material having optical transparency to visible light, for example, glass. The material for forming the substrate S may be any of various synthetic resins provided that it has resistance to heat generated when the film is formed. In this case, a visible light laser that emits a laser beam having a wavelength included in the visible light region can be selected for the laser irradiation unit 29 described later. When a visible light laser is used, the irradiation position of the laser beam, that is, the position where the laser beam is irradiated on the substrate can be visually checked and the position to which the laser beam is irradiated can be adjusted. If the laser is a visible light laser, it is possible to select a laser for irradiating a laser beam having a color such as red, green, and blue depending on the imaging environment such as the size of the substrate to be irradiated, the state of arrangement and the brightness in the chamber, .

The imaging section 27 overlaps with the center of the substrate stage 24 in a planar state opposite to the substrate stage 24 in a horizontal posture. When the substrate S is supported by the lifting pin 26a, the imaging section 27 overlaps with the center of the substrate S at a planar surface opposed to the substrate stage 24. [

An irradiation window 21c is formed in one of the four corners of the chamber main body 21. [ The irradiation window 21c is composed of a transparent member having a predetermined permeability, which is sandwiched by a hole passing through one corner of the chamber body 21 along the horizontal direction. A laser irradiation section 29 for irradiating a laser beam L toward the inside of the chamber main body 21 is located at a position overlapping the irradiation window 21c as the outside of the chamber main body 21. [ The laser irradiation unit 29, the imaging unit 27, and the lift pins 26a constitute a part of the substrate monitoring apparatus.

The laser irradiation unit 29 has an irradiation port 29a for irradiating the laser beam L. The laser irradiation unit 29 is provided inside the chamber body 21 as shown in Fig. Which irradiates the laser beam L toward the irradiating position P1, which is a predetermined position of the point light source. The irradiation position P1 is, for example, a portion of the inner wall surface 21d of the chamber body 21 that faces the irradiation port 29a of the laser irradiation portion 29. [

On the other hand, when the substrate S is located at the raised position, the laser beam L irradiated by the laser irradiation unit 29 touches one of the corner portions Sc of the substrate S. At this time, the optical axis La of the laser beam L is introduced into the interior of the substrate S from the edge portion Sc of the substrate S, and the portion where the laser beam L is introduced in the cross- Is set so that the laser beam L is led out from another position.

At least a part of the laser beam L is introduced into the interior of the substrate S from the edge portion Sc of the substrate S. [ The light introduced into the substrate S is led out from the leading portion So which is a portion different from the edge portion Sc of the plate S among the end face Se1 of the substrate S. [ The lead portion So is the entirety of the cross section Se1 excluding the corner portion Sc irradiated with the laser beam L among the cross section Se1 of the substrate S, for example. The brightness of the corner portion Sc and the brightness of the leading portion So that the laser beam L touches in the cross section Se1 of the substrate S become higher than the other portions of the substrate S. [

That is, the section Se1 generates scattered light from the laser beam L. As the laser beam L scattered at the end face Se1 is received by the light receiving element of the image pickup section 27, the position of the end face Se1 becomes a position of high lightness as the image pickup section 27 . The imaging section 27 converts the optical image of the section Se1 formed on the light-receiving surface of the imaging section 27 into an electric signal. That is, the image pickup section 27 picks up an image of the end face Se1 from which light is emitted toward the image pickup section 27.

In other words, the lift pins 26a place the end face Se1 of the substrate S at the target position P2. The target position P2 is a region where the end face Se1 of the substrate S is located when the substrate S is located at the raised position in the inner space of the chamber main body 21. [ The lift pin 26a moves from the lead-out position P4 set at a position different from the irradiated position P3 set at one corner Sc of the cross section Se1 of the substrate S to the laser beam L). The lead-out position P4 is a region in which the lead-out portion So of the end face Se1 is located when the substrate S is located at the raised position in the inner space of the chamber main body 21. [

The path through which the laser beam L passes through the inside of the substrate S is the transmission path PP and the direction from the plane including the image pickup range toward the image pickup section 27 is the image pickup direction (Di). Among them, the transmission path PP is a direction extending substantially along the horizontal direction. On the other hand, the imaging direction Di is a direction substantially along the gravity direction. That is, in the sputter chamber 13, the transmission path PP and the imaging direction Di are almost orthogonal.

The optical image of the end face Se1 in the substrate S is substantially aligned with the end face Se1 of the substrate S in comparison with the configuration in which the angle formed between the transmission path PP and the imaging direction Di is smaller And is formed on the light-receiving surface of the imaging section 27 in an equivalent shape. This makes it easy to monitor the image pickup result, which is the image of the end face Se1.

When the irradiation port 29a has a diameter D and the substrate S has a thickness T, the diameter D is larger than the thickness T. [ This makes it easier for the laser beam L to touch the whole of the cross section Se1 in the thickness direction as compared with the configuration in which the diameter D of the irradiation aperture 29a is equal to or smaller than the thickness T of the substrate S. The amount of the laser beam L introduced into the interior of the substrate S from the end face Se1 of the substrate S becomes large, The amount of light of the laser beam L derived from the laser beam L is also increased.

Here, as the display device such as a flat panel display is made lighter and thinner, the thickness of the substrate used in the display device is also progressing. In addition, in recent years, a substrate S having a thickness T of less than 1 mm is used as a substrate S constituting a display device. When the thickness T of the substrate S is, for example, 0.1 mm or more and 0.7 mm or less, the diameter D is preferably 1 mm or more, more preferably 3 mm or more, and further preferably 5 mm or more .

The elevation pin 26a places the end face Se1 of the substrate S in the gravity direction at a position overlapping with the irradiation port 29a of the laser irradiation unit 29 when the substrate S is held in the raised position. When the elevation pin 26a holds the substrate S in the raised position and the end face Se1 of the substrate S in the gravity direction is disposed at a position overlapping the irradiation port 29a of the laser irradiation unit 29, The laser irradiation unit 29 irradiates the laser beam L from a direction substantially perpendicular to the end face Se1 of the substrate S. [ As a result, a large number of laser beams L are introduced by the end face Se1 of the substrate S.

The laser beam L is irradiated from the end face Se1 of the substrate S on which the metal film is not attached or the adhesion of the metal film is small even if the metal film is formed on the front surface or back surface of the substrate S, It is possible to introduce the laser beam L into the substrate S more reliably. As a result, even in the case of the substrate S having a metal film, the brightness of the entire section Se1 of the substrate S tends to be high.

The elevation pin 26a may be disposed above the irradiation port 29a of the laser irradiation unit 29 in the direction of gravity when the substrate S is held in the raised position. Alternatively, the elevation pin 26a may be disposed at a position below the irradiation port 29a of the laser irradiation unit 29 in the direction of gravity when the substrate S is held in the raised position .

As shown in Fig. 5, the image pickup section 27 has a predetermined imaging range C. The imaging section 27 is provided with the entirety of the section S a of the substrate S as a whole and the entirety of the high definition section Sh which is an area including the corner section Sc irradiated with the laser beam L and the lead section So Is disposed at a position different from the irradiation position P1 to be irradiated with the laser beam L so that the portion including the irradiation region C is included in the imaging range C. [ That is, the imaging section 27 is arranged such that the entire high-illuminance position P5 composed of the irradiated position P3 and the derived position P4 in the inner space of the chamber body 21 is included in the imaging range C . In other words, the position of the imaging section 27 and the position of the substrate stage 24 on which the substrate S is mounted in the gravitational direction is determined by the cross section Se1 of the substrate S in the imaging range C of the imaging section 27, It is far enough to include the whole.

Sputter  Electrical configuration of the device

The electrical configuration of the sputtering apparatus 10 will be described with reference to Fig. Only the portions related to the imaging by the imaging section 27, the irradiation of the laser beam L by the laser irradiation section 29, and the monitoring of the substrate S will be described below in the electrical configuration of the sputtering apparatus 10 .

The sputtering apparatus 10 is provided with a control unit 40 for controlling the driving of the sputtering apparatus 10. The control unit 40 is electrically connected to the conveying robot 15, the attitude changing unit 25, the elevating mechanism 26b, the imaging unit 27, the clamp 28 and the laser irradiating unit 29, respectively. The control unit 40 controls the driving of the transfer robot 15, the attitude changing unit 25, the elevating mechanism 26b and the clamp 28 to change the position of the substrate S inside the sputtering apparatus 10 Changed. The control unit 40 controls the driving of the imaging unit 27 and the laser irradiation unit 29 to perform an operation related to the monitoring of the state on the end face Se1 of the substrate S. [ The control unit 40 acquires an image pickup result, for example, an image output by the image pickup unit 27 toward the control unit 40. [

The control unit 40 includes a storage unit 40a and a monitoring unit 31. [ The storage unit 40a is a program interpreted by the control unit 40 and stores a program relating to a film forming process including a monitoring process of the substrate S in the sputter chamber 13. [

The controller 40 analyzes and executes the program relating to the film forming process so that the control unit 40 controls the conveying robot 15, the posture changing unit 25, the elevating mechanism 26b, the imaging unit 27, the clamp 28, And the laser irradiation unit 29, and a signal for stopping the driving. The carrier robot 15, the attitude changing unit 25, the lifting mechanism 26b, the image pickup unit 27 and the laser irradiating unit 29 start and stop operations by receiving signals from the control unit 40, respectively.

The monitoring section 31 monitors an image which is the image pickup result of the image pickup section 27. [ The monitoring unit 31 generates cracks or cracks on the end face Se1 of the substrate S based on the image and further damages such as gold cracks extending from the end face Se1 of the substrate S toward the inside are formed Or not. Although the control unit 40 includes the above-described monitoring unit 31, it may be provided in the sputtering apparatus 10 separately from the monitoring unit 31. [ The laser irradiation unit 29, the imaging unit 27, the lift pins 26a, and the monitoring unit 31 constitute an example of the substrate monitoring apparatus.

The control unit 40 is also provided with information on the position of the substrate S in the sputter chamber 13 and information on the position of the transport robot 15 and information on the position of the substrate S in the sputter chamber 13, Information on the number of revolutions of the motor may be acquired.

The control unit 40 generates a signal for starting the irradiation of the laser beam L to the laser irradiating unit 29 when determining that the position of the substrate S is the ascending position from the acquired information, And outputs the laser beam to the irradiation unit 29. The laser irradiation unit 29 that has acquired the signal from the control unit 40 starts irradiation of the laser beam L. [ The control unit 40 generates a signal for imaging the image pickup unit 27 and outputs the signal to the image pickup unit 27. The image pickup unit 27, which has acquired the signal from the control unit 40, The substrate S is picked up.

Substrate monitoring method

The substrate monitoring method will be described with reference to Figs. 7 and 8. Fig.

As shown in Fig. 7, the substrate monitoring method includes an irradiation step (step S11), an imaging step (step S12), and a monitoring step (step S13). In the irradiation step, the laser irradiating unit 29 irradiates the laser beam L onto one corner part Sc of the substrate S and irradiates the laser beam L from the corner part Sc, And at least a part of the laser beam L is introduced therein. The brightness of the edge portion Sc to which the laser beam L touches in the cross section Se1 of the substrate S and the brightness of the leading portion So leading to the laser beam L introduced into the substrate S Becomes higher than other portions of the substrate S.

In the imaging step, the imaging section 27 picks up the entire section S 1 of the substrate S.

In the monitoring process, the monitoring section 31 monitors the imaging result of the imaging section 27. The monitoring unit 31 detects a detection line traversing the end face Se1 of the substrate S as a plurality of detection lines parallel to each other in an image which is also an image pickup result of the image pickup unit 27 And detects the position of a portion having higher brightness than other portions on each detection line. The monitoring unit 31 treats the position information of the high-brightness portion obtained as described above as positional information of the substrate S end face Se1 on the outer edge of the substrate S to be monitored, that is, on the detection line.

Here, the monitoring unit 31 sets the range of the image processing as a part of the image pickup range while monitoring the state of the end face Se1 of the substrate S, Se1 have two lines of reference lines which serve as a reference in the detection of the damage. The position of each reference line within the range of the image processing and the installation width which is the width between the reference lines of two lines so that the outer edge of the substrate S held by the arrangement portion is included between the two reference lines Is set. In addition, when the position where the lightness detected on each of the detection lines in the region sandwiched by these two lines of reference lines is not equal to or more than the predetermined number, the monitoring unit 31 detects damage such as cracks or breakage, S is formed on the end face Se1.

The monitoring section 31 is a position surrounded by the outer edge shape serving as the reference and is formed so as to have a cross section Se1 of the substrate S when a portion with a high brightness is located at a position distant from the shape of the outer edge by a predetermined distance, It is determined that a crack is formed toward the inside of the substrate S.

In the above-described sputtering apparatus 10, the substrate monitoring method is performed, for example, in the following order.

8, the first irradiation step (step S21), the first imaging step (step S22), the film formation step (step S23), the second irradiation step (step S24), and the second imaging step S25) are performed in this order. Before the first irradiation step is started, the control unit 40 brings the substrate S to the transport robot 15 from the transport chamber 11 into the sputter chamber 13.

Further, before the first irradiation step is started, the control unit 40 raises the lifting pin 26a to the lifting mechanism 26b. The tip end of the lifting pin 26a is brought into contact with the back surface of the substrate S and the substrate S is transferred to the lifting pin 26a by the carrier robot 15 and moved to the outside of the sputter chamber 13. [ Accordingly, the control unit 40 holds the substrate S in the lifted position on the lifting pin 26a.

In the first irradiation step, the control unit 40 starts irradiating the laser irradiation unit 29 with the laser beam L so that the laser beam L touches one corner Sc of the substrate S . Thus, the laser beam L is introduced into the substrate S to thereby derive the laser beam L from the leading portion So of the substrate S. As a result, the brightness of the section Se1 of the substrate S becomes higher than the brightness of the other portions of the substrate S and the lift pins 26a.

Subsequently, in the first imaging step, the control section 40 causes the imaging section 27 to pick up the entire end face Se1 of the substrate S. When the imaging of the end face Se1 by the imaging section 27 ends, the control section 40 causes the laser irradiation section 29 to finish the irradiation of the laser beam L. [ At this time, for example, the control section 40 acquires the imaging result of the imaging section 27 to determine the end of imaging by the imaging section 27, and the laser irradiation section 29 irradiates the laser beam L And outputs the signal to the laser irradiating unit 29. [0050]

In the film forming process, first, the control section 40 lowers the lifting pin 26a to the lifting mechanism 26b and places the substrate S on the lifting surface 24a of the substrate stage 24. Subsequently, the controller 40 moves the clamp 28 from the retracted position to the fixed position, and fixes the substrate S to the retention surface 24a. When the substrate S is fixed by the clamp 28, the control unit 40 causes the posture changing unit 25 to change the posture of the substrate stage 24 from the horizontal posture to the standing posture.

A film is formed on the surface of the substrate S as the target 23 is sputtered while the posture changing section 25 holds the posture of the substrate stage 24 in the standing posture. When the formation of the film is finished, the posture changing section 25 changes the posture of the substrate stage 24 from the standing posture to the horizontal posture, and the clamp 28 moves from the fixed position to the retreat position.

Then, before the second irradiation step is started, between the film formation step and the second irradiation step, the control section 40 raises the lift pins 26a to the lift mechanism 26b. Thus, the lift pin 26a holds the substrate S in the raised position. The control section 40 causes the laser irradiation section 29 to start irradiating the laser beam L so that the laser beam L is irradiated onto one edge portion Sc of the substrate S in the second irradiation step Reach.

Thereafter, in the second imaging step, the control unit 40 causes the imaging unit 27 to pick up the entire end face Se1 of the substrate S. When the imaging of the end face Se1 by the imaging section 27 ends, the control section 40 causes the laser irradiation section 29 to finish the irradiation of the laser beam L. [

When the irradiation of the laser beam L is completed, the control unit 40 introduces the laser beam L into the sputter chamber 13 from the transfer chamber 11 to the transfer robot 15, (S). Then, the control unit 40 causes the substrate S after film formation to be carried out from the sputter chamber 13 to the transfer robot 15.

Further, the monitoring process is performed at, for example, the following timing. The monitoring process is performed during the period from when the process in the first imaging process is performed until the posture of the substrate stage 24 is changed to the standing posture. When the monitoring unit 31 determines that the substrate S is damaged, the control unit 40 preferably stops the process after the film forming process. According to this structure, since the film formation on the damaged substrate S is not performed, useless consumption of the target 23 can be suppressed.

When the film is formed on the damaged substrate S, the deposited film flying on the substrate S against cracking or cracking is attached to the placement surface 24a of the substrate stage 24. [ Then, the film adhering to the substrate stage 24 is peeled off, so that particles are generated inside the sputter chamber 13. From this point of view, when the substrate S is cracked or cracked as in the embodiment of the present invention, the process after the film forming process is stopped, and the formation of the film in the unnecessary region as described above is suppressed, It is also possible to reduce the amount of particles generated in the nozzle 13.

In addition, since the damaged substrate S is prevented from being split into a plurality of fragments small enough to be unrecoverable by the transfer robot 15 along with the change of the posture of the substrate stage 24, It is possible to lower the frequency of opening the sputter chamber 13 to recover the substrate.

Further, for example, the monitoring step is carried out after the processing in the second imaging step is performed, and before the substrate S is taken out of the sputter chamber 13. [

Here, as a configuration in which the sputtering apparatus 10 forms the different films in the two sputter chambers 13, the film formation is performed on the substrate S in the first sputter chamber 13, 13, the film S is formed on the substrate S, the following actions and effects can be obtained.

That is, when the monitoring unit 31 provided in the first sputter chamber 13 determines that the substrate S is damaged, the control unit 40 controls the second sputter chamber 13 13 to stop the conveyance. This prevents the substrate S having the damage from being conveyed to the second sputter chamber 13 and consequently the substrate S is cracked by the conveyance of the conveying robot 15, The target 23 provided in the main body 13 is prevented from being wasted. According to this configuration, the operator can open the first sputter chamber 13 to the atmosphere in a state where the gate valve between the first sputter chamber 13 and the transfer chamber 11 is closed, Can be recovered.

Further, when the sputtering apparatus 10 has the same film formation in the two sputter chambers 13, the following actions and effects can be obtained.

That is, when the monitoring unit 31 provided in one of the sputter chambers 13 determines that the substrate S is damaged, the control unit 40 controls the transfer chamber 11 from one of the sputter chambers 13, It is preferable to stop the conveyance to the < / RTI > In addition, the control unit 40 maintains the gate valve between the one sputter chamber 13 and the transfer chamber 11 in a closed state, and also stops the film formation on the substrate S in the one sputter chamber 13 And the film formation on the substrate S may be performed using only the other sputter chamber 13. [

The monitoring step for the imaging result of the first imaging step and the monitoring step for the imaging result of the second imaging step may be performed after the substrate S after film formation is conveyed from the sputter chamber 13. [

Further, any one of the first imaging step and the second imaging step may be used. Here, the damage to the substrate S may be formed, for example, during the time when the substrate S is brought into the sputter chamber 13 through the transfer chamber 11. As a result, it is preferable to detect the damage formed before the film is formed on the substrate S when the imaging process is performed only once, and in the deep case, the imaging process should be performed before the film formation process.

Further, for example, the damage of the substrate S may be formed during the film forming process by heat input from the cathode 14 to the substrate S. [ Therefore, when it is desired to detect the damage formed on the substrate S during the film forming process, it is preferable that the image capturing process is performed later than the film forming process.

The irradiation of the laser beam L by the laser irradiation unit 29 may continue throughout the period from the start of the first irradiation step to the end of the second imaging step. In this case, the processing for terminating the irradiation of the laser beam and the processing for the second irradiation step may be performed before the film forming step. Alternatively, the irradiation of the laser beam L is started at a point in time before the substrate S is brought into the sputter chamber 13, and continues for a period of time during which a plurality of substrates S are processed inside the sputter chamber 13 . In this case, the processing in the first irradiation step and the processing in the second irradiation step may be used.

Sputter  Action of the device

The operation of the sputtering apparatus 10 will be described with reference to Fig.

In the sputter chamber 13, the imaging section 27 is located at a position different from the irradiation position P1 to be irradiated with the laser beam L. Thus, at least a portion of the end face Se1 of the substrate S, which is a portion where cracks, cracks, or the like are formed in the substrate S, can be picked up. In addition, at the high brightness position P5 including the irradiated position P3 and the derived position P4, since the brightness is higher than other positions by the irradiation of the laser irradiation unit 29, The state of the end face Se1 of the substrate located at the high brightness position P5 is obtained for the image. That is, the optical image of the cross section Se1 projected onto the image pickup section 27 by the irradiation of the laser beam L is obtained in the image picked up by the image pickup section 27. [ As a result, the cross section Se1 of the substrate S can be monitored in a state where the degree of freedom of the position of the imaging section 27 is increased with respect to the position of the laser irradiation section 29. [

The laser beam L irradiated by the laser irradiation unit 29 is introduced into the interior of the substrate S from one corner portion Sc of the substrate S. As shown in Fig. The laser beams L 1, L 2 and L 3 introduced into the substrate S from among the lights included in the laser beam L are incident on the substrate S at an angle In the inside of the substrate S. On the other hand, when the laser beam L is projected from a direction substantially perpendicular to the end face Se1 of the substrate S with respect to a portion different from the edge portion Sc among the end faces Se1, The light ray L is hardly reflected inside the substrate S. In such a configuration, it is necessary for the sputtering apparatus 10 to include a plurality of irradiation units in order that the entire section S e1 of the substrate S can be recognized in the image picked up by the imaging unit 27. In addition, the plurality of irradiating portions must simultaneously irradiate the laser beam toward the end face Se1 of the substrate S so that the brightness of the entire end face Se1 becomes high.

On the other hand, according to the laser irradiation part 29 in the embodiment of the present invention, light introduced into the substrate S is easily reflected inside the substrate S and diffused into a wider area in the substrate S. As a result, the area of the leading portion So that derives the light incident on the inside of the substrate S in the cross section Se1 of the substrate S becomes large. As a result, it is possible to reduce the number of the laser irradiating portions 29 while making all the portions except for the portion of the cross section Se1 of the substrate S contacting with the laser beam L a leading portion So.

10, since the substrate S has optical transparency, the laser beam L that is in contact with the substrate S is introduced into the inside of the substrate S, and is introduced into the inside of the substrate S The laser beam L is led out from the leading portion So included in the cross section Se1. The section Se1 has a surface roughness enough to scatter the laser beam L derived from the section Se1. As a result, when the laser beam L is derived from the section Se1, the laser beam L is scattered at the section Se1. As a result, the brightness of the end face Se1 of the substrate S is increased by the laser beam L scattered at the end face Se1. In addition, as compared with a configuration in which the laser beam L is not scattered at the end face Se1, the range of the exit angle of the laser beam L derived from the end face Se1 becomes large.

As described above, according to the first embodiment of the substrate monitoring apparatus and the substrate monitoring method, the following effects can be obtained.

(1) The state of the end face Se1 of the substrate S can be monitored in a state in which the degree of freedom of the position of the imaging section 27 with respect to the position of the laser irradiation section 29 is increased.

(2) Since the laser irradiating unit 29 is a point light source, the difference between the brightness of the section Se1 in the substrate S, the brightness of the other part in the substrate S, and the brightness of the lift pin 26a .

(3) Since the laser beam L comes into contact with the edge portion Sc of the substrate S, the laser beam L introduced into the substrate S is reflected inside the substrate S, It is likely to expand to a wider area of the image. As a result, the proportion of the outgoing portion So in the cross section Se1 of the substrate S is increased.

(4) The laser beam L tends to touch the whole of the cross section Se1 in the thickness direction. As a result, the amount of light introduced into the substrate S from the end face Se1 of the substrate S becomes large, so that the amount of the laser beam L becomes large.

(5) Since the laser beam L is reflected in the substrate S and passes through the inside of the substrate S to the end face Se1 of the substrate S, .

(6) As compared with the configuration in which the angle formed between the transmission path PP and the imaging direction Di is smaller, the image of the section Se1 on the substrate S is almost equal to the sectional surface Se1 of the substrate S And is formed on the light-receiving surface of the imaging section 27 in an equivalent shape. This makes it easy to monitor the imaging results.

1st Example Variation example

The above-described embodiment may be modified as appropriate as follows.

In the imaging process Variation example

1st Variation example

In the imaging process, the imaging section 27 may image the substrate S moving from the raised position toward the placement position, or pick up the substrate S moving from the placement position toward the raised position.

11, an image pickup process for picking up an image of the substrate S moving by the image pickup section 27 from the raised position toward the set position will be described. In addition, the process of picking up the substrate S moving from the placement position toward the raised position is more effective than the process of picking up the substrate S moving from the raised position to the placement position, The operation of the image pickup section 27 and the operation of the laser irradiation section 29 are common. Accordingly, the description of the process of picking up the image of the substrate S moving from the placement position to the raising position by the imaging section 27 will be omitted.

The lift pin 26a is moved from the raised position to the retracted position Lc relative to the optical axis La of the laser beam L irradiated by the laser irradiation unit 29 fixed to the chamber main body 21, And moves along the gravity direction. At this time, the substrate S is located, for example, in the first position, the second position, and the third position in order from the upper side in the gravitational direction.

Hereinafter, the substrate S positioned at the first position is referred to as a substrate S1, the substrate S positioned at the second position is referred to as a substrate S2, and the substrate S positioned at the third position is referred to as a substrate Is referred to as a substrate S3. Further, when the substrate S is moved, the substrate S may be in contact with, for example, the other end of each of the plurality of lift pins 26a in the gravitational direction. In this case, the substrate S is disposed with a slope with respect to the optical axis La of the laser beam L. That is, since the optical axis La of the laser beam L has a slope with respect to the end face Se1 of the substrate S, the laser beam L is introduced perpendicularly to the end face Se1 of the substrate S It is difficult.

In this state, when the substrate S is lowered to the second position, the laser beam L is introduced to the end face Se1 of the substrate S for the first time. Next, when the substrate S is lowered to the third position, the laser beam L is irradiated on a part of the surface of the substrate S while being not irradiated on the end face Se1 of the substrate S3.

The image pickup section 27 is configured to move the substrate S 1, the substrate S 2 and the substrate S 3 in the direction of the gravity direction from the raised position to the mounted position, .

In this configuration, for example, the control unit 40 may control the operation of the image pickup unit 27 as follows. That is, the control unit 40 acquires information about the number of revolutions of the motor for raising and lowering the lift pins 26a as information about the position of the substrate S in the gravity direction. When the control unit 40 judges that the position of the substrate S is any one of the first position, the second position and the third position from the acquired information, the control unit 40 generates a signal to be picked up by the image pickup unit 27, (27). Subsequently, the imaging section 27, which has acquired the signal from the control section 40, picks up an image of the substrate S included in the imaging range C. [

The control unit 40 also generates a signal for imaging the imaging unit 27 a plurality of times at predetermined time intervals during a period in which the motor for raising and lowering the elevation pins 26a is operating, And the image pickup section 27 may pick up the image of the substrate S included in the image pickup range C. The image picked up by the image pickup section 27 a plurality of times at predetermined time intervals allows the image picked up by the image pickup section 27 to include an image including the substrate S1, an image including the substrate S2, ) Is included.

Here, when the substrate S is disposed at the first position, since the laser beam L is not irradiated on the substrate S1, the image of the substrate S ) Position information of the section Se1 can not be obtained.

Next, when the substrate S is placed at the second position, since the optical axis La of the laser beam L is irradiated with the optical axis La inclined with respect to the cross section Se1 of the substrate S2, the laser beam L The amount of the laser beam L introduced into the substrate S2 may be smaller than in the case where the laser beam L is irradiated almost perpendicularly to the end face Se1. In this case, a region where the laser beam L is led out from the end face Se1 of the substrate S2 becomes small, or a portion where the brightness of the leading portion So becomes small occurs, and the substrate S2 It is sometimes difficult to obtain the positional information of the end face Se1 on the detection line in the entire section Se1 of the projection optical system.

Even when the substrate S is disposed at the third position, since the laser beam L is irradiated at a position deviating from the end face Se1 of the substrate S3 as described above, in the case of the substrate S2 described above The amount of the laser beam L introduced into the substrate S3 becomes small. In this case, however, the laser beam L irradiated on a part of the surface of the substrate S3 is introduced into the substrate S3, so that a small lead portion So is obtained in the end face Se1 of the substrate S3 .

Therefore, the monitoring unit 31 combines the imaging result of imaging the substrate S1, the imaging result of imaging the substrate S2, and the imaging result of imaging the substrate S3, The positional information of the section Se1 on the detection line is obtained from the entire section S1 of the substrate S by supplementing the deficient portion with respect to the entire section S1. Thus, it is possible to determine whether or not the substrate S is damaged.

Here, the thickness T of the substrate S may be a thickness not exceeding 1 mm as described above. At this time, the substrate S placed on the lift pin 26a may be in the following state depending on the number of the lift pins 26a or the position of the substrate S relative to the lift pins 26a. That is, the entire substrate S is in a state of being along one plane or the outer edge portion of the substrate S is sagged downward in the gravity direction as compared with the central portion of the substrate S, And the central portion may protrude upward in the gravity direction from the other portions. In such a case, the end face Se1 of the substrate S is inclined with respect to the optical axis La of the laser beam L, as shown in Fig. From this point of view, it is possible to judge the presence or absence of damage in the substrate S by employing the step of picking up the substrate S at a plurality of positions in the direction of gravity as an imaging step.

Further, in the case where a film formation process is continuously performed on a plurality of substrates as such a thin plate substrate, there is a high possibility that the state of deformation in each substrate is different from the state of deformation in the other substrate. As a result, when the imaging positions of the laser beam L and the substrate S are fixed to one-to-one, the laser beam L is not introduced or introduced into the substrate S due to the state of deformation in the substrate.

Even in such a case, by employing an imaging process of picking up the substrate S in each of a plurality of positions in the gravitational direction, it is possible to obtain an opportunity to pick up a substrate on which the laser beam L is introduced with respect to the substrate S It becomes possible to increase. In addition, by supplementing the deficient portion with respect to the entire section (Se1) of the substrate (S) in each of the plurality of imaging results by using a plurality of imaging results, It is possible to obtain the positional information of the cross section Se1, and it is possible to judge whether or not the substrate S is damaged.

In the first modification, in the imaging step, the imaging section 27 picks up the substrate S at a plurality of positions during the rise or fall of the substrate S, but not limited thereto, One modification may be modified as follows. That is, the number of times the image pickup section 27 picks up an image is one time, and the image pickup time of the image pickup section 27, that is, the exposure time is set to a period from the start to the end of the rise of the substrate S, . Thereby, a portion having high brightness is obtained by using the integrated value or the maximum value of the brightness of the imaging result obtained in the imaging time, and the position of the end face Se1 in the detection line in the entire section (Se1) Can be obtained.

In the first modified example, the monitoring unit 31 detects the damage to the substrate S during the period from the time when the substrate S moves from the set position to the raised position or the period from the raised position to the set position It is preferable to terminate the determination of the presence or absence. Thus, whether or not the substrate S is damaged before the posture of the substrate S changes from the horizontal posture to the standing posture or before the substrate S is conveyed by the conveying robot 15 is judged. This prevents the substrate S having the damage from cracking due to the change of the posture of the substrate S or cracking by the conveyance of the substrate S by the conveying robot 15.

The imaging process in the first embodiment and the imaging process in the first modification may be combined.

Second Variation example

The image pickup section 27 may pick up the image of the substrate S conveyed by the conveying robot 15. In such a configuration, for example, the imaging range C of the imaging section 27 includes the entrance / exit port 21a of the sputter chamber 13. The image pickup section 27 is provided with a plurality of different positions of the leading ends of the conveying robots 15, for example, one end of the conveying robot 15 in the conveying direction of the substrate S, The image of the substrate S is picked up.

The monitoring unit 31 also obtains positional information of the end face Se1 of the detection line by using a plurality of imaging results to determine whether or not the substrate S is damaged.

The configuration for carrying out the imaging method and imaging method is not limited to the sputtering apparatus 10 of the above-described embodiment, that is, the multi-chamber sputtering apparatus, The present invention can also be applied to an in-line type apparatus which is an apparatus for carrying a substrate S and performing a process on the substrate S.

Other Variation example

The diameter D of the irradiation port 29a of the laser irradiation unit 29 may be less than or equal to the thickness of the substrate S. Also in this configuration, effects similar to the above-mentioned items (1) to (3), (5) and (6) can be obtained.

The sputter chamber 13 may have a plurality of laser irradiation portions 29. In this configuration, when the number of the laser irradiating portions 29 is four or less, it is preferable that the laser irradiating portions 29 are arranged one by one in the four corners of the chamber main body 21. It is also preferable that the elevation pin 26a positions the four corners Sc of the substrate S at the irradiated position P3 of each laser irradiating unit 29. [

The laser irradiation unit 29 may irradiate a laser beam L at a portion different from the edge portion Sc of the substrate S in the cross section Se1 of the substrate S. [ That is, a part different from the edge part Sc of the substrate S among the end faces Se1 of the substrate S may be disposed at the irradiated position P3. Even with such a configuration, effects similar to the above-mentioned items (1), (2) and (4) to (6) can be obtained.

The laser irradiation unit 29 may be a linear light source. Even with such a configuration, effects similar to the above-mentioned items (1), (3) and (4) to (6) can be obtained.

A part of the end face Se1 excluding the corner portion Sc at which the laser beam L touches the end face Se1 of the substrate S may be a lead portion So. In such a configuration, the imaging section 27 may capture the corner section Sc and the leading section So, to which the laser beam L is irradiated, from the substrate S. The imaging section 27 can monitor at least the portion of the end face Se1 of the substrate S captured by the imaging section 27. [

When the part of the cross section Se1 excluding the corner part Sc is the lead-out part So, the laser irradiating part 29 is provided for changing the part of the end face Se1 of the substrate S contacting with the laser beam L It is preferable to provide a position changing mechanism. The position of the leading portion So in the cross section Se1 of the substrate S can be changed by changing the portion where the laser irradiating portion 29 touches the laser beam L in the substrate S. [ The imaging range C of the imaging section 27 includes the position of the leading portion So of the substrate S so that it is possible to pick up the entire section S1 of the substrate S in a state of high brightness .

The laser irradiating section 29 may be provided with a position changing mechanism even if all the sections of the section Se1 except for the corner section Sc are the leading section So.

The substrate S may have a shape other than a rectangular shape, for example, a disk shape, and the substrate S may have a strip shape extending along one direction. Even in such a configuration, it is possible to obtain effects equivalent to the above-mentioned item (1).

The imaging section 27 is not limited to the upper wall of the chamber main body 21 but may be disposed at another position in the chamber main body 21, for example, a side wall or a lower wall. The laser irradiating unit 29 is not limited to any one of the four corners of the chamber body 21 but may be disposed at another position in the chamber body 21, for example, a side wall. The point is that the image pickup section 27 is arranged so that at least a part of the section Se1 disposed at the high brightness position P5 is included in the image pickup range C and that the laser irradiation section 29 is different from the image pickup section 27 It is sufficient to satisfy the constitution of irradiating the laser beam L toward the position.

The posture of the substrate S may be held by the substrate stage 24 when the laser irradiation unit 29 irradiates the substrate S with the laser beam L. [ In this configuration, the substrate stage 24 is an example of the arrangement portion. Since the substrate stage 24 maintains the posture of the substrate S in a state in which the back surface of the substrate S is in contact with the placement surface 24a, the laser beam L irradiated by the laser irradiation unit 29 The substrate stage 24 is easy to touch. This ensures that the portion other than the end face Se1 of the substrate S has a brightness equivalent to that of the end face Se1 of the substrate Se, (Se1). In this point of view, when the laser irradiation section 29 irradiates the substrate S with the laser beam L, the position of the substrate S is moved away from the placement surface 24a of the substrate stage 24, ). ≪ / RTI >

The posture of the substrate stage 24 may be a horizontal posture or an upright posture when the laser irradiating portion 29 irradiates the laser beam L onto the substrate S held by the substrate stage 24. That is, the laser irradiating unit 29 may be configured to illuminate the laser beam L with respect to the substrate S held on the substrate stage 24 in a substantially horizontal state, and to irradiate the laser beam L onto the substrate stage 24 in a substantially vertical state And may be configured to illuminate the laser beam L with respect to the held substrate S.

The substrate stage 24 may be provided with the substrate S within the imaging range of the imaging section 27 in any configuration. The laser irradiation unit 29 irradiates the substrate S placed in the imaging range with the laser beam L and generates scattered light of the laser beam L at the end face Se1 to pick up an image of the end face Se1 As a result, if it is configured to be formed on the light-receiving surface of the imaging section 27, an effect similar to the above-mentioned matter (1) can be obtained.

The posture of the substrate S may be held by the conveying robot 15 when the laser irradiating unit 29 irradiates the substrate S with the laser beam L. [ In this configuration, the conveying robot 15 is an example of the arrangement portion. However, the carrier robot 15 maintains the posture of the substrate S in contact with the back surface of the substrate S, similarly to the substrate stage 24. [ Accordingly, the posture of the substrate S is preferably held by the lift pin 26a for the same reason as in the case where the substrate stage 24 is the placement portion.

The imaging section 27 may be disposed inside the chamber body 21 if the imaging section 27 can hold the imaging function.

When the distance between the imaging section 27 and the substrate stage 24 is small enough to be outside the imaging range C of the imaging section 27 and outside only a part of the end face Se1 of the substrate S, ) Preferably includes an angle changing mechanism capable of changing an imaging angle, which is an angle formed by the normal line of the substrate S and the imaging direction, in which the light is incident on the imaging unit 27 from the imaging range C . The angle changing mechanism may be configured so as to be capable of changing the imaging angle within a range of 0 DEG to 90 DEG, for example. With this configuration, the imaging section 27 can pick up the entire section S1 of the substrate S by imaging the end face Se1 of the substrate S while changing the imaging angle by the imaging section 27. Fig.

The imaging section 27 may be provided with a position changing mechanism that can change the position of the imaging section 27 with respect to the chamber body 21 instead of the angle changing mechanism described above. The position changing mechanism can change the position of the substrate S included in the imaging range C of the imaging section 27 by changing the position of the imaging section 27. [ The imaging section 27 may be provided with both an angle changing mechanism and a position changing mechanism for changing the imaging angle.

The laser irradiation unit 29 may be disposed inside the chamber main body 21 as long as it can maintain the function of irradiating the laser beam L.

The monitoring unit 31 may determine whether or not the end face Se1 of the substrate S has a damage by the first method described below. That is, in the substrate monitoring method described in the first embodiment, the monitoring unit 31 calculates an approximation curve along the section (Se1) of the substrate S based on the position information of the bright part obtained on each detection line as a linear function That is, a straight line, and is set to an approximate straight line corresponding to the outer edge of the substrate S. Further, the monitoring unit 31 determines that the end face Se1 of the substrate S has a damage when at least a part of the approximate straight line is not contained in the region sandwiched by the two lines of reference lines.

In addition, the monitoring unit 31 may determine whether or not the end face Se1 of the substrate S is damaged by the second method described below. That is to say, the monitoring unit 31 has two lines of reference lines parallel to the approximate straight line based on the approximate straight line corresponding to the outline of the substrate S described above, and two lines of reference lines sandwiching the approximate straight line in the direction orthogonal to the approximate straight line. Set the lines. The two lines of reference lines are composed of a first line and a second line, and each of the first line and the second line is separated from the approximate straight line by a predetermined value in a direction orthogonal to the approximate straight line.

In addition, the monitoring unit 31 may be configured such that the end face Se1 of the substrate S is positioned in the region sandwiched by these two lines of reference lines, It is judged to have this damage.

This second method is a case in which the position of the outer edge of the substrate S is unstable within the imaging range, particularly within the image processing range which is a part of the imaging range, and the positional deviation of the substrate S with respect to the position of the outer shape of the reference substrate It is effective when the cross-section Se1 of the substrate S becomes as large as the deviation for judging that there is damage.

In such a case, even if the outline position of the substrate to which the monitoring section 31 is a reference is set as in the method and the first method described in the first embodiment, and the two lines of reference lines are previously set on the basis thereof, There is a case where the positional deviation of the substrate S with respect to the position of the external shape of the substrate is judged to be a damage in the end face Se1.

On the other hand, according to the second method, two lines of reference lines are set on the basis of the approximate straight line corresponding to the outer edge of the substrate S, It is inhibited from being erroneously judged as the damage in the case

The case where the position of the substrate S is unstable in the image pickup range means that the position in the horizontal direction of the substrate S supported by the lift pins 26a is the position In the imaging range. The case where the position of the substrate S is unstable in the imaging range means that the substrate S is unstable in the imaging range when the substrate S is carried into the sputter chamber 13 by the carrier robot 15, The case where the position of the substrate S is released from the reference position is high.

The monitoring unit 31 performs the combination of the method, the first method, and the second method described in the first embodiment, and calculates the cross section Se1 of the substrate S by two or more methods among the three methods It is judged that the end face Se1 of the substrate S does not have any damage. Thus, by judging the presence or absence of damage on the end face Se1 by combining a plurality of methods, it is possible to reduce the probability of erroneous determination due to factors such as instability of the position of the substrate S, Lt; / RTI > As a result, it is possible to more accurately determine the presence or absence of damage on the end face Se1 of the substrate S by a combination of a plurality of methods.

The monitoring unit 31 may be implemented by combining any two of the methods, the first method, and the second method described in the first embodiment. In this case, when it is judged that the end face Se1 of the substrate S is not damaged by the two methods, it is judged that the end face Se1 of the substrate S does not have any damage. Even in such a configuration, the probability of occurrence of misjudgment can be lowered rather than the presence or absence of damage on the end face Se1 of the substrate S by one method.

The components other than the monitoring unit 31, that is, the imaging unit 27, the laser irradiation unit 29, and the arrangement unit are not the sputter chamber 13 but the transfer chamber 11 and the load lock chamber 12). Alternatively, if the sputtering apparatus 10 has a different chamber, elements other than the monitoring unit 31 among the substrate monitoring apparatuses may be arranged in different chambers.

The substrate monitoring apparatus is not limited to the sputtering apparatus 10 but includes a deposition apparatus for forming a film by vapor deposition on the substrate S, a CVD apparatus for forming a film on the substrate S using a chemical vapor deposition (CVD) The apparatus and the etching apparatus for etching the substrate (S).

The configuration of the first embodiment described above and the configurations of the modifications can be appropriately combined.

Example  2

A second embodiment in which a substrate monitoring apparatus is applied to a sputtering apparatus will be described with reference to FIGS. 12 to 16. FIG. The sputtering apparatus of the second embodiment differs from the sputtering apparatus of the first embodiment in the method of irradiating the substrate with the laser beam. In the following, the differences from the first embodiment will be described in detail, while the same elements as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof will be omitted.

In the following, the sputter chamber configuration, the operation of the sputtering apparatus, and the substrate monitoring method will be sequentially described.

Sputter Chamber  Configuration

The configuration of the sputter chamber 13 will be described with reference to Figs. 12 to 15. Fig. In Fig. 13, both of the imaging units located outside the sputter chamber 13 as imaging units positioned above the substrate S and the substrate S are shown by solid lines for convenience of illustration.

12, on the outer side of the chamber body 21 as the upper wall 21e of the chamber body 21 at the time of the upper surface of the sputter chamber 13, four imaging units 51 and four laser irradiation units (52) are located. Four imaging windows 21b and one irradiation window 21c are formed on the upper wall 21e of the chamber main body 21. Each of the two imaging windows 21b among the four imaging windows 21b And also functions as an examination window 21c. The direction parallel to the gravity direction is the Z direction, and each imaging window 21b and each irradiation window 21c penetrates the upper wall 21e along the Z direction.

Each imaging section 51 and each laser irradiation section 52 overlaps with a part of the substrate S in the Z direction. One direction orthogonal to the Z direction is the X direction, and the direction orthogonal to the X direction is the Y direction. The substrate S has a rectangular shape extending along the X and Y directions. The substrate S includes the edge Se2 having a rectangular rim shape and the edge Se2 of the substrate S and the end face Se1 of the substrate S are formed on the substrate S, And constitutes the end portion Se of the seal member S. The edge Se2 of the substrate S includes a portion of the surface of the substrate S which is inwardly of the outer edge and the outer edge of the surface and the edge Se2 of the substrate S includes, for example, To the inner portion.

Each laser irradiating section 52 irradiates a laser beam L toward a part of the end portion Se of the substrate S and irradiates the laser beam L from the end portion Se of the substrate S, Is different from the irradiated portion irradiated by the remaining laser irradiating portion (52). In each of the two portions extending along the X direction in the end portion Se of the substrate S, different laser irradiation portions 52 irradiate the laser beam L. [ A laser beam L is irradiated to a portion extending along the X direction of the end portion Se as a different laser irradiation portion 52 in each of the two portions extending along the Y direction in the end portion Se of the substrate S The laser irradiation unit 52 irradiates the laser beam L.

13, the substrate S is divided into a first region R1, a second region R2, a third region R3, and a fourth region R4 in plan view opposite to the surface of the substrate S. [ And is divided into regions R4. In the substrate S, the first region R1 and the second region R2 are arranged in the Y direction, and the third region R3 and the fourth region R4 are arranged in the Y direction. In the substrate S, the first region R1 and the third region R3 are arranged in the X direction, and the second region R2 and the fourth region R4 are arranged in the X direction have.

A part of each region is overlapped with one imaging unit 51 in a plan view opposed to the surface of the substrate S. [ Each of the imaging sections 51 has a predetermined imaging range C and the lift pins 26a are arranged so that at least an entire end Se of the substrate S among the areas of the substrate S overlapping the respective imaging sections 51 The substrate S is arranged so as to be included in the imaging range C.

Each laser irradiating unit 52 irradiates the laser beam L onto the end portion Se of the substrate S among the substrates S arranged in the imaging range C. As shown in Fig. The laser irradiating unit 52 reflects and scatters the laser beam L at the end Se of the substrate S to form an image of the end Se on the light receiving surface of the image pickup unit 51. [

In the laser irradiation part 52 for irradiating the laser beam L from the plurality of laser irradiation parts 52 toward the end part Se extending along the X direction, the distance from the irradiation part 52a in the Z direction is The irradiation width W, which is the width of the laser beam L along the X direction, increases. The laser irradiating unit 52 irradiates the laser beam L having the strip shape extending along the end portion Se of the substrate S to the entire portion of the end portion Se of the substrate S extending along the X direction . The irradiation width W of the laser beam L is longer than the length of the portion extending along the X direction in the end portion Se.

The laser irradiating section 52 expands a portion formed on the light receiving surface of the image pickup section 51 out of the end portion Se of the substrate S by the amount of the laser light L extending in a strip shape.

The Z direction is a direction parallel to the normal direction on the surface of the substrate S and the normal direction on the placement surface 24a of the substrate stage 24, The angle formed by the direction in which the light beam L extends and the Z direction is the irradiation angle?. The irradiation angle [theta] is greater than 0 [deg.] And less than 90 [deg.]. That is, the laser irradiation unit 52 irradiates the laser beam L toward the end Se along the direction not parallel to the Z direction.

A part of the laser beam L irradiated toward the end Se of the substrate S is guided to the end Se of the substrate S in the Z direction among the lift pins 26a, Overlapping portions of the substrate stage 24 and portions of the substrate stage 24 overlapping the end portion Se of the substrate S in the Z direction are suppressed. This makes it possible to suppress the brightness of portions other than the substrate S from being increased in the images captured by the imaging unit 51 and to prevent the portion other than the substrate S from being erroneously recognized as the end Se of the substrate S .

The laser irradiating unit 52 described above has a configuration in which the laser beam L is irradiated toward the end Se of the substrate S along the Z direction, The distance between the irradiation port 52a and the end portion Se of the substrate S can be increased without increasing the distance between the end portions Se of the substrate S. [ This makes it possible to increase the irradiation width W of the laser beam L at a position where it contacts the end Se of the substrate S. [

Sputter  Action of the device

The operation of the sputtering apparatus 10 will be described with reference to Figs. 16 and 17. Fig. Hereinafter, the substrate S is a substrate having transparency to the laser beam L, and explains the action when the laser beam L is irradiated to the substrate S before film formation.

A part of the laser beam L irradiated toward the end portion Se of the substrate S is brought into contact with the edge Se2 of the substrate S and the edge Se2 of the substrate S, Lt; / RTI > Another part of the laser beam L irradiated toward the end portion Se of the substrate S is transmitted from the edge Se2 of the substrate S to the inside of the substrate S, (Se1). As described above, since the end face Se1 of the substrate S has a degree of surface roughness enough to scatter the laser beam L, the laser beam L is irradiated from the end face Se1 of the substrate S It is scattered when it is derived.

The laser beam L reflected by the edge Se2 of the substrate S in the laser beam L and the laser beam L scattered by the end face Se1 of the substrate S are reflected by the substrate S, Is formed on the light-receiving surface of the image sensing unit 51. The image-

Therefore, the position of the image pickup section 51 is preferably a position in which an image is formed on the light-receiving surface of the image pickup section 51 by reflection and scattering of the laser beam L at the end portion Se of the substrate S, The position of the image pickup section 51 is not limited to one position with respect to the position of the laser irradiation section 52. [ As a result, the degree of freedom of the position of the imaging section 51 with respect to the position of the laser irradiation section 52 can be increased.

The laser beam L projected on the substrate S is transmitted through the inside of the substrate S from the edge Se2 of the substrate S and scattered on the end face Se1. Thus, the brightness of the portion other than the portion of the end portion Se of the substrate S that is in contact with the laser beam L can be increased.

The end face Se1 of the substrate S may be a curved face having a curvature protruding outward with respect to the edge Se2 of the substrate S as shown in Fig. In this configuration, the laser beam L that is in contact with the edge Se2 of the substrate S among the laser beams L that are in contact with the edge Se of the substrate S is reflected, Is also reflected. Of these, the laser beam L which is in contact with a part of the section S1 of the substrate S is emitted from the section Se1 as scattered light due to the surface roughness of the section Se1.

When the end face Se1 of the substrate S protrudes outwardly and the laser beam L is irradiated on the end face Se1 of the substrate S, The area irradiated with the laser beam L is wider than that irradiated on the flat portion of the substrate S. As a result, the probability that the laser beam L is reflected and scattered is increased, so that it is easy to obtain a portion with high brightness in the image pickup result.

17, a part of the laser beam L which is in contact with the edge Se2 of the substrate S similarly to the substrate S described earlier with reference to Fig. 16 is transferred to the substrate S And is led out from the end face Se1 of the substrate S.

Substrate monitoring method

In the substrate monitoring method according to the second embodiment, the substrate S to which the position in the sputter chamber 13 is fixed may be imaged by each imaging section 51 similarly to the substrate monitoring method of the first embodiment described above . In this case, each laser irradiating portion 52 irradiates a laser beam L onto a substrate S placed at a predetermined position by the lifting pin 26a, and an image of the end portion Se of the substrate S Is formed on the light-receiving surface of the imaging section (51). Each of the imaging units 51 generates an image from an image corresponding to a portion included in the imaging range C among the end portions Se of the substrate S. [

Each of the laser irradiating portions 52 may irradiate the laser beam L almost simultaneously with the end portion Se of the substrate S or may irradiate the laser beam L with respect to the end portion Se at different timings good. Each of the imaging units 51 is configured so that while the laser irradiation unit 52 irradiates the laser beam L with respect to the end portion Se of the substrate S included in the imaging range C of each imaging unit 51 The end Se may be picked up.

The monitoring unit 31 generates an image including the entire end Se of the substrate S based on the image generated by each imaging unit 51. [ The monitoring unit 31 also determines whether or not the end portion Se of the substrate S has a damage based on the generated image by the same method as the first embodiment described above.

In the substrate monitoring method in the second embodiment, similarly to the substrate monitoring method of the first modification described above, each imaging section 51 is a substrate S moving from the raised position to the mounted position, The substrate S may be picked up at a plurality of different positions.

As described above, according to the second embodiment of the substrate monitoring apparatus and the substrate monitoring method, the following effects can be obtained.

(7) The position of the image pickup section 51 is preferably a position in which an image is formed on the light receiving surface of the image pickup section 51 by the reflected light and the scattered light of the laser beam L at the end portion Se of the substrate S , The position of the image pickup section 51 is not limited to one position with respect to the position of the laser irradiation section 52. As a result, the degree of freedom of the position of the imaging section 51 with respect to the position of the laser irradiation section 52 can be increased.

(8) The laser beam L projected onto the substrate S passes through the inside of the substrate S and is scattered at the end face Se1. Thus, the brightness of the portion other than the portion of the end portion Se of the substrate S that is in contact with the laser beam L can be increased.

(9) A portion formed on the light-receiving surface of the image pickup unit 51 out of the end portion Se of the substrate S by the amount that the laser beam L extends in a strip shape is diffused.

Second Example Variation example

The above-described second embodiment may be modified as appropriate as follows.

The laser irradiation unit 52 may have the same irradiation width W of the laser beam L throughout the entire Z direction. Even in such a configuration, if the laser beam L has a band shape, an effect similar to the above-mentioned matter (9) can be obtained.

The irradiation width W of the laser beam L may be smaller than the width of the end Se along the X direction or may be smaller than the width of the end Se along the Y direction. In this configuration, the laser beam L is irradiated to one portion extending along the X direction or one portion extending along the X direction in the end portion Se of the substrate S using a plurality of laser irradiation portions You can investigate.

Or the laser irradiating unit 52 has a mechanism capable of changing the irradiation direction of the laser beam L and the changing mechanism changes the position at which the laser beam L touches the end Se, The laser beam L may be irradiated. In this configuration, the image of the end Se may be picked up by the image pickup unit 51 whenever the irradiation direction of the laser beam L is changed.

The number of the imaging units 51 may be 3 or less, or 5 or more. The point is that the number of the imaging unit 51 is arbitrary if the image corresponding to the entirety of the end Se can be formed by combining the images picked up by the respective imaging units 51. [

The number of laser irradiation units 52 may be 3 or less, or 5 or more. The point is that the number of the laser irradiation units 52 is arbitrary if the laser beam L can be irradiated onto the entire end Se of the substrate S. [ When the laser beam L can not be irradiated onto the entire end Se of the substrate S in a state where the position of the laser irradiation unit 52 is fixed, And a position changing mechanism capable of changing the position of the laser irradiation unit 52 may be provided. Alternatively, as described above, the laser irradiation unit 52 may be provided with a changing mechanism for changing the irradiation direction of the laser beam L.

The irradiation angle [theta] of the laser beam L may be 0 [deg.]. That is, the laser irradiation unit 52 may be configured to irradiate the laser beam L toward the end Se of the substrate S along the Z direction. Even in such a configuration, it is possible to form an image of the end Se of the substrate S on the light-receiving surface of the image pickup section 51. [

If the film formed on the substrate S is a light-transmitting film, even if the laser beam L is irradiated onto the substrate S after film formation, the edge of the substrate S, that is, the edge of the film, The laser beam L is reflected or scattered at a portion including the portion overlapping with the edge Se2 of the substrate S, the end face of the film, and the end face Se1 of the substrate S.

As shown in Fig. 18, when the film formed on the substrate S is the metal film M, the edge Me2 of the metal film M as compared with the substrate S having the light transmitting property, The light amount of the laser beam reflected at the portion overlapping with the edge Se2 of the substrate S becomes large and an image can be formed on the light receiving surface of the image pickup section 51 by the reflected light.

In this case, although the laser beam L is reflected at the edge Me2 of the metal film M, the reflection of the laser beam L does not occur at the portion where the substrate S is not present. The amount of light received by the imaging section 51 between the light from the edge Me2 of the metal film M and the light from the edge Me2 out of the light received by the imaging section 51 A boundary between a portion having a high lightness and a portion having a low lightness becomes clear in the imaging result.

When the film formed on the substrate S is a metal film, the thickness of the metal film may be smaller than the thickness of the portion formed on the edge Se2 of the substrate S, as compared with the portion formed on another portion of the substrate S. When the thickness of the portion of the metal film overlapping with the edge Se2 of the substrate S is small enough to transmit the laser beam L, light S is emitted from the edge Se2 of the substrate S to the inside of the substrate S. [ And the laser beam L is led out from the end face Se1 of the substrate S.

The posture of the substrate S may be held by the substrate stage 24 when the laser irradiating unit 52 irradiates the substrate S with the laser beam L as in the first embodiment. At this time, the posture of the substrate stage 24 may be a horizontal posture or an upright posture. That is, the laser irradiation unit 52 may be configured to illuminate the laser beam L with respect to the substrate S supported on the substrate stage 24 in a substantially horizontal state, And may be configured to irradiate the laser beam L with respect to the substrate S to be supported.

10: sputtering apparatus 11: transporting chamber
12: load lock chamber 13: sputter sinker
14: cathode 15: conveying robot
21: chamber body 21a:
21b: imaging window 21c: illumination window
21d: inner wall surface 21e: upper wall
22: backing plate 23: target
24: substrate stage 24a:
25: attitude changing section 26: elevating device
26a: lift pin 26b: lift mechanism
27, 51: imaging section 28: clamp
29, 52: laser irradiation unit 29a, 52a:
31: Monitoring section 40: Control section
40a: storage unit C: imaging range
L, L1, L2, L3: laser beam La: optical axis
P1: irradiation position P2: target position
P3: irradiated position P4: derived position
P5: High brightness position S: Substrate
Sc: edge Se: edge
Se1: Sectional Se2: Edge
Sh: My name is Soo Soo:

Claims (19)

An imaging unit having a light receiving surface for receiving light from a predetermined imaging range,
A placement unit for placing a substrate within the imaging range,
An irradiating portion for irradiating a laser beam onto the substrate disposed within the imaging range,
And a monitoring unit for monitoring the imaging result,
Wherein the substrate has a rectangular shape,
Wherein the irradiation unit irradiates at least one of the corners of the substrate with the laser beam and derives the laser beam at a portion other than a portion where the laser beam is introduced in an end portion of the substrate,
The arrangement section arranges the entire substrate within the imaging range,
The image pickup section is formed on the light receiving surface as an image pickup result of an image of the end portion due to the scattered light of the laser beam generated at the end portion of the substrate, The substrate monitoring apparatus comprising: 2. The image pickup apparatus according to claim 1, wherein the imaging unit is configured such that the irradiation unit transmits the inside of the substrate by irradiating the substrate with the laser beam, and irradiates the image of the end by the scattered light of the laser beam scattered at the end, And the light receiving surface is formed on the light receiving surface. The method according to claim 1,
A substrate stage having a placement surface on which the substrate is placed,
And a lifting mechanism that changes the position of the substrate between a mounting position at which the substrate contacts the mounting surface and a rising position at which the substrate is spaced upward from the mounting surface by raising and lowering the arrangement portion,
Wherein,
When the substrate is in the retracted position,
When the substrate is in the raised position, and
And judges whether or not the end portion of the substrate is damaged based on the image pickup result obtained from the image pickup unit at least one of when the substrate is moving between the mount position and the up position. The substrate monitoring apparatus according to claim 3, wherein the monitoring unit terminates the determination as to whether or not the end portion of the substrate is damaged while the substrate is moving between the mounting position and the up position. The image forming apparatus according to claim 2, wherein the imaging unit is configured so that the irradiating unit transmits the inside of the substrate through the reflection in the substrate by abutting the laser beam on the substrate, and the scattering light of the laser beam scattered at the end And an image of the end portion is formed on the light receiving surface as the image pickup result. delete The substrate monitoring apparatus according to any one of claims 1 to 5, wherein the irradiation unit is a point light source. The substrate monitoring apparatus according to any one of claims 1 to 5, wherein the irradiating section irradiates the laser beam having a strip shape extending along the end portion to the end portion. delete delete At least one of reflected light and scattered light of the laser beam is generated at an end portion of the substrate by irradiating a laser beam on a substrate disposed in an image pickup range of the image pickup portion so that an image of the end portion is formed on the light receiving surface of the image pickup portion And
An imaging step of imaging the end,
And a monitoring step of monitoring the imaging result,
Wherein the substrate has a rectangular shape,
Wherein the irradiating step comprises irradiating the laser beam onto at least one of the corners of the substrate and deriving the laser beam at a portion different from the portion of the substrate where the laser beam is introduced,
Wherein the imaging step picks up the entire substrate positioned within the imaging range in a direction opposite to a plane in which the substrate is spread. delete delete The substrate monitoring method according to claim 11, wherein the irradiating part for irradiating the laser beam is a point light source. 15. The substrate monitoring method according to claim 14, wherein the diameter of the irradiation port included in the irradiation unit is larger than the thickness of the substrate. 12. The apparatus according to claim 11, wherein the substrate is movable between a mounting position for contacting the mounting surface of the substrate stage and a rising position for spacing upward from the mounting surface,
In the monitoring step,
When the substrate is in the retracted position,
When the substrate is in the raised position, and
And determining whether or not the end portion of the substrate is damaged based on the image pickup result obtained from the image pickup unit at least one of when the substrate is moving between the set position and the raised position Way. 17. The substrate monitoring method according to claim 16, wherein the monitoring step includes the step of terminating the determination of whether or not the end portion of the substrate is damaged while the substrate is moving between the set position and the raised position. delete delete

Images