TWI678402B - 用於銅及矽通孔（tsv）應用的化學機械平坦化（cmp）組合物及其方法 - Google Patents

用於銅及矽通孔（tsv）應用的化學機械平坦化（cmp）組合物及其方法 Download PDF

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Publication number
TWI678402B
TWI678402B TW107128768A TW107128768A TWI678402B TW I678402 B TWI678402 B TW I678402B TW 107128768 A TW107128768 A TW 107128768A TW 107128768 A TW107128768 A TW 107128768A TW I678402 B TWI678402 B TW I678402B
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TW
Taiwan
Prior art keywords
copper
cmp
chemical mechanical
composition
alanine
Prior art date
Application number
TW107128768A
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English (en)
Chinese (zh)
Other versions
TW201920533A (zh
Inventor
曉波 史
Xiaobo Shi
羅拉Ｍ 梅特茲
Laura M. Matz
克遠 李
Chris Keh-Yeuan Li
明蒔 蔡
Ming-Shih Tsai
保嘉 潘
Pao Chia Pan
昌哲 謝
Chad Chang-Tse Hsieh
榮澤 楊
Rung-Jie Yang
布雷克Ｊ 路
Blake J. Lew
馬克李納德 歐尼爾
Mark Leonard O'neill
科瓦奇 艾格尼斯 德瑞斯基
Agnes Derecskei-Kovacs
Original Assignee
美商慧盛材料美國責任有限公司
Versum Materials Us, Llc
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Application filed by 美商慧盛材料美國責任有限公司, Versum Materials Us, Llc filed Critical 美商慧盛材料美國責任有限公司
Publication of TW201920533A publication Critical patent/TW201920533A/zh
Application granted granted Critical
Publication of TWI678402B publication Critical patent/TWI678402B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW107128768A 2017-08-17 2018-08-17 用於銅及矽通孔（tsv）應用的化學機械平坦化（cmp）組合物及其方法 TWI678402B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762546914P 2017-08-17 2017-08-17
US62/546914 2017-08-17
US16/101,869 US11401441B2 (en) 2017-08-17 2018-08-13 Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US16/101869 2018-08-13

Publications (2)

Publication Number Publication Date
TW201920533A TW201920533A (zh) 2019-06-01
TWI678402B true TWI678402B (zh) 2019-12-01

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TW107128768A TWI678402B (zh) 2017-08-17 2018-08-17 用於銅及矽通孔（tsv）應用的化學機械平坦化（cmp）組合物及其方法
TW108139403A TW202003732A (zh) 2017-08-17 2018-08-17 用於銅及矽通孔(tsv)應用的化學機械平坦化(cmp)組合物及其方法

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TW108139403A TW202003732A (zh) 2017-08-17 2018-08-17 用於銅及矽通孔(tsv)應用的化學機械平坦化(cmp)組合物及其方法

Country Status (8)

Country Link
US (1) US11401441B2 (enExample)
EP (1) EP3444309B1 (enExample)
JP (2) JP6995716B2 (enExample)
KR (2) KR102323303B1 (enExample)
CN (1) CN109401631A (enExample)
IL (1) IL261161B2 (enExample)
SG (1) SG10201806977YA (enExample)
TW (2) TWI678402B (enExample)

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US20200277514A1 (en) * 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications
KR20220070026A (ko) * 2019-09-30 2022-05-27 버슘머트리얼즈 유에스, 엘엘씨 낮은 디싱 구리 화학적 기계적 평탄화
WO2022026369A1 (en) * 2020-07-29 2022-02-03 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper and through-silicon via (tsv) chemical-mechanical planarization (cmp)
JP2023548484A (ja) * 2020-10-29 2023-11-17 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法
KR20230139386A (ko) * 2020-12-14 2023-10-05 버슘머트리얼즈 유에스, 엘엘씨 구리 및 관통 실리콘 비아(tsv)를 위한 화학적 기계적평탄화(cmp)
KR102410845B1 (ko) * 2021-01-08 2022-06-22 에스케이씨솔믹스 주식회사 반도체 공정용 조성물 및 이를 이용한 반도체 소자 제조방법
JP7596928B2 (ja) * 2021-05-24 2024-12-10 信越化学工業株式会社 研磨用組成物
CN113789127B (zh) * 2021-10-20 2023-07-28 博力思(天津)电子科技有限公司 一种硅通孔铜膜抛光液
KR102867479B1 (ko) * 2022-09-06 2025-10-14 한국전자기술연구원 선택적 연마특성이 향상된 실리콘관통전극의 구리 연마용 슬러리 조성물
WO2025111136A1 (en) 2023-11-21 2025-05-30 Versum Materials Us, Llc Eco-friendly biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025111138A1 (en) 2023-11-22 2025-05-30 Versum Materials Us, Llc Biocides for chemical mechanical planarization (cmp) polishing compositions
WO2025122389A1 (en) 2023-12-07 2025-06-12 Versum Materials Us, Llc Chemical additives for chemical mechanical planarization (cmp) polishing compositions
WO2025175199A1 (en) 2024-02-16 2025-08-21 Versum Materials Us, Llc Corrosion inhibitors for metal chemical mechanical planarization (cmp) polishing compositions

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Also Published As

Publication number Publication date
TW201920533A (zh) 2019-06-01
KR20200125564A (ko) 2020-11-04
EP3444309A1 (en) 2019-02-20
IL261161A (en) 2019-01-31
CN109401631A (zh) 2019-03-01
US11401441B2 (en) 2022-08-02
IL261161B1 (en) 2023-11-01
TW202003732A (zh) 2020-01-16
US20190055430A1 (en) 2019-02-21
EP3444309B1 (en) 2025-07-16
JP2019052295A (ja) 2019-04-04
JP2020164877A (ja) 2020-10-08
KR102323303B1 (ko) 2021-11-08
SG10201806977YA (en) 2019-03-28
KR20190019875A (ko) 2019-02-27
JP6995716B2 (ja) 2022-01-17
IL261161B2 (en) 2024-03-01

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