TWI677916B - 基板處理方法、基板處理裝置及記錄媒體 - Google Patents

基板處理方法、基板處理裝置及記錄媒體 Download PDF

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TWI677916B
TWI677916B TW106110652A TW106110652A TWI677916B TW I677916 B TWI677916 B TW I677916B TW 106110652 A TW106110652 A TW 106110652A TW 106110652 A TW106110652 A TW 106110652A TW I677916 B TWI677916 B TW I677916B
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liquid film
film
temperature
solution
compound
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TW106110652A
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TW201802928A (zh
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吉田圭佑
Keisuke Yoshida
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日商東京威力科創股份有限公司
Tokyo Electron Limited
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

[課題] 提供一種基板處理方法及基板處理裝置，可以抑制在形成含有金屬氧化物之被膜之際，產生氣泡之情形。 [解決手段] 本發明之基板處理方法，包含以下步驟：對基板之表面塗佈含有金屬氧化物之化合物之溶液，藉以在表面形成溶液之液膜的步驟；以低於化合物之交聯溫度的第一溫度，加熱液膜的步驟；以及在以第一溫度加熱液膜後，對液膜照射能量線，藉以在表面形成含有金屬氧化物之被膜的步驟。

Description

基板處理方法、基板處理裝置及記錄媒體
本案係有關於基板處理方法、基板處理裝置及記錄媒體。
於半導體製程等，有時會使用含有金屬氧化物之被膜。於專利文獻1，揭露一種含有金屬氧化物之被膜的形成手法，係被覆含有金屬氧化物之化合物的溶液，並使溶劑蒸發後，再進行用以促進交聯反應的烘烤之手法。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2014-134581號公報
[發明所欲解決的問題] 於專利文獻1所揭露之手法，在烘烤之際，有時會產生氣泡。有鑑於此，本案之目的係提供一種基板處理方法及基板處理裝置，其可以抑制在形成含有金屬氧化物之被膜之際，產生氣泡之情形。 [解決問題之技術手段]
本案之一層面之基板處理方法，包含以下步驟：對基板之表面塗佈含有金屬氧化物之化合物之溶液，藉以在表面形成溶液之液膜的步驟；以低於化合物之交聯溫度的第一溫度，加熱液膜的步驟；以及在以第一溫度加熱液膜後，對液膜照射能量線，藉以在表面形成含有金屬氧化物之被膜的步驟。
若藉由此基板處理方法，由於係以低於交聯溫度之第一溫度來加熱液膜，所以會在保持化合物之流動性的狀態下，促進溶劑之揮發。藉由保持化合物之流動性，會抑制在溶劑之揮發當中產生氣泡的情形。之後，藉由照射能量線而促進液膜中之化合物的交聯反應，以形成含有金屬氧化物之被膜。若係藉由能量線之照射，則相較於藉由加熱的情形，會有抑制伴隨交聯反應之進行所產生之液膜之收縮的傾向。再者，由於在能量線之照射之前，就促進了溶劑之揮發，所以伴隨交聯反應之進行所產生之液膜之收縮就更進一步地受到抑制。因此，由於伴隨液膜之收縮而產生氣泡的情形受到了抑制，所以可以抑制在形成含有金屬氧化物之被膜之際，產生氣泡之情形。
溶液可以含有溶劑，第一溫度可以在溶劑之沸點以下。在此情況下，係藉由使溶劑之揮發和緩地進行，而可以更確實地抑制氣泡之產生。
亦可在對表面形成液膜之前，更進一步地包含以下步驟：塗佈化合物之溶液，藉以在表面形成厚度小於液膜的基底液膜；以及以高於化合物之交聯溫度的第二溫度，加熱基底液膜，藉以在表面形成厚度小於被膜的基底被膜。在此情況下，由於相較於液膜，基底液膜的厚度較小；且相較於被膜，基底被膜的厚度較小；所以會在基底被膜之形成過程中，抑制基底液膜之收縮。因此，在基底被膜之形成過程中，難以產生氣泡。藉由在形成液膜之前就先形成基底被膜，而在液膜收縮之際，抑制液膜從基板之表面遊離。所以，會更進一步地抑制在被膜之形成過程中產生氣泡的情形。因此，可以更確實地抑制氣泡之產生。
金屬氧化物，可以包含：氧化鈦、氧化鋯、氧化鉭、氧化鎢、氧化鉿、及氧化鋁中之至少一種。
對表面塗佈溶液的步驟，可以包含對表面中之具有凹凸的部分塗佈溶液的動作。若基板之表面有凹凸，則在凹部內會特別容易有伴隨液膜之收縮而產生氣泡的傾向。所以，在具有凹凸之表面形成被膜之情況下，藉由抑制液膜之收縮所得到的上述效果會更為顯著。
作為被膜，可以係形成用以保護表面的遮罩。
本案之一側面之基板處理裝置包含：第一處理部，用以塗佈含有金屬氧化物之化合物的溶液；第二處理部，用以施行熱處理；第三處理部，用以照射能量線；以及控制器。控制器，可以構成為執行以下控制；使第一處理部執行對基板之表面塗佈溶液的控制，藉以在表面形成溶液之液膜；使第二處理部執行以低於化合物之交聯溫度的第一溫度，加熱液膜的控制；以及在以第一溫度加熱液膜後，使第三處理部執行對液膜照射能量線的控制，藉以在表面形成含有金屬氧化物之被膜。
本案之一側面之記錄媒體，係可供電腦讀取之媒體，並記錄著用以使裝置執行上述基板處理方法的程式。 [發明之效果]
若藉由本發明，則可以抑制在形成含有金屬氧化物之被膜之際，產生氣泡之情形。
以下針對實施形態，參照圖式進行詳細說明。於說明中，對於同一要素、或具有同一功能的要素，會標註同一符號，並省略重複說明。
[基板處理裝置] 首先，作為基板處理裝置之一例，針對基板處理系統1之結構，進行說明。基板處理系統1，係在基板的表面形成含有金屬氧化物之被膜者。作為被膜，可舉例如用以保護基板表面的遮罩。
如圖1及圖2所示，基板處理系統1具備載運區塊2及處理區塊3。
載運區塊2具有載運站21及搬入･搬出部22。載運站21支持複數之載具10。載具10容納作為基板之一例之例如圓形的複數片晶圓W(例如半導體晶圓)。在載具10之一方的側面，設有用以使晶圓W出入的開閉門10a。
搬入･搬出部22係配置成中隔在載運站21及處理區塊3之間，並具有複數之開閉門22a，以分別對應載運站21上的複數之載具10。載運站21上的載具10，係配置成以其開閉門10a面向開閉門22a。藉由同時開啟開閉門22a及開閉門10a，以使載具10內部與搬入･搬出部22內部連通，而可以從搬入･搬出部22內對載具10進行晶圓W之取出、放入。搬入･搬出部22內建有傳遞臂A1。傳遞臂A1從載具10取出晶圓W而移交至處理區塊3，再從處理區塊3接收晶圓W而送回至載具10內。
處理區塊3具有棚架部23、塗佈單元30、熱處理･照射單元40、以及搬運臂A2。棚架部23係暫時性容納晶圓W之物，用於在傳遞臂A1與處理區塊3之間進行晶圓W之傳遞。棚架部23係配置於處理區塊3內的載運區塊2側。
塗佈單元30係用以對晶圓W之表面，塗佈含有金屬氧化物之化合物(以下稱為「第一化合物」)的溶液(以下稱為「第一處理液」)之處理部(第一處理部)。第一化合物，係例如含有金屬氧化物之有機化合物。金屬氧化物可以含有：氧化鈦、氧化鋯、氧化鉭、氧化鎢、氧化鉿、及氧化鋁中之至少一種。
作為第一化合物之具體例，可舉出：甲氧基鈦(titanium methoxide)、乙氧基鈦、丙氧基鈦、丁氧基鈦、戊氧基鈦、己氧基鈦、甲氧基鋯(methoxy zirconium)、乙氧基鋯、丙氧基鋯、丁氧基鋯、苯氧基鋯、甲氧基鉭(methoxy tantalum)、乙氧基鉭、丙氧基鉭、丁氧基鉭、苯氧基鉭、甲氧基鉿(hafnium methoxide)、乙氧基鉿、丙氧基鉿、丁氧基鉿、戊氧基鉿、己氧基鉿、甲氧基鋁(aluminum methoxide)、乙氧基鋁、丙氧基鋁、丁氧基鋁、戊氧基鋁、己氧基鋁等。
第一處理液，可以更進一步地含有用以使第一化合物溶解的溶劑。作為溶劑，可舉例如：甲醇、乙醇、丙酮、稀釋劑等。
例如，塗佈單元30係如圖3所示，具有旋轉保持機構31及處理液供給部32。旋轉保持機構31，係保持晶圓W而使其旋轉。旋轉保持機構31具有保持部33及驅動部34。保持部33從下方支持著水平配置之晶圓W，並藉由真空吸附等而保持該晶圓W。驅動部34內建有動力源，例如電動馬達等，並使保持部33繞著鉛直軸線旋轉。
處理液供給部32對晶圓W之表面Wa，供給第一處理液。處理液供給部32具有本體35及噴嘴36。本體35係藉由例如泵，而對噴嘴36壓送第一處理液。噴嘴36係配置於保持部33之上方，並朝向下方釋出由本體35所壓送而來的第一處理液。
如圖4所示，熱處理･照射單元40，具有熱處理部41及照射部42。
熱處理部41係用以施行熱處理的處理部(第二處理部)。熱處理部41例如具有熱板43及昇降機構44。熱板43支持著水平配置之晶圓W，係用以加熱的板狀之加熱構件。熱板43例如內建有作為熱源的複數之加熱器。作為加熱器之具體例，可舉電熱線式的加熱器等。
昇降機構44係使晶圓W在熱板43上昇降。昇降機構44例如具有複數(例如3支)之昇降頂針45及驅動部46。複數之昇降頂針45，係以貫穿熱板43的方式而朝向上方突出。驅動部46使複數之昇降頂針45昇降，而使其前端部在熱板43之上部出沒。藉此，可以使晶圓W在熱板43上昇降。
照射部42係用以照射能量線之處理部(第三處理部)。能量線，只要可藉由其照射而促進上述第一化合物之交聯，則不論任何波長範圍之能量線皆可。作為能量線之具體例，可舉波長150~400nm之紫外線。能量線之波長，亦可係170~250 nm。
照射部42例如係設於熱板43之上方，並具有出射紫外線之光源。作為光源之具體例可舉：出射波長172nm之紫外線的氟化氪準分子光源、出射波長193nm之紫外線的氟化氬準分子光源、以及出射波長222nm之紫外線的氯化氪準分子光源等。照射部42係構成為使得光源所出射之能量線，對熱板43側(下方)出射。
又，熱處理部41及照射部42未必要構成為一個單元，亦可係構成為彼此獨立的單元。
搬運臂A2，係在棚架部23與塗佈單元30、熱處理･照射單元40之間搬運晶圓W，亦在塗佈單元30與熱處理･照射單元40之間搬運晶圓W。
處理區塊3，可以更進一步地具有熱處理單元50。熱處理單元50係用於以不同於熱處理･照射單元40之熱處理部41的溫度，施行熱處理的處理部(第四處理部)。熱處理單元50例如可以與熱處理部41同樣地構成。在處理區塊3更進一步地具有熱處理單元50之結構中，搬運臂A2亦會在塗佈單元30與熱處理單元50之間搬運晶圓W。
控制器100構成為執行以下控制：使塗佈單元30執行對表面Wa塗佈第一處理液的控制，藉以在晶圓W之表面Wa形成第一處理液之液膜；使熱處理部41執行以低於上述第一化合物之交聯溫度的第一溫度，加熱上述液膜之控制；以及在以第一溫度加熱上述液膜後，使照射部42執行對上述液膜照射能量線的控制，藉以在表面Wa形成含有上述金屬氧化物之被膜。
所謂之交聯溫度，係第一化合物之交聯所需溫度的最小値。第一溫度，可以係不及第一化合物之交聯溫度、並且在上述溶劑之沸點以下。例如第一溫度可以係70~110℃、亦可係80~100℃、又可係85~95℃。所謂之以第一溫度加熱上述液膜，亦包含例如以溫度保持在第一溫度左右之熱源(例如熱板43)來加熱上述液膜的動作。
控制器100亦可構成為更進一步地執行以下控制：在對表面Wa形成上述液膜之前，使塗佈單元30執行對表面Wa塗佈第一化合物之溶液(以下稱為「第二處理液」)的控制，藉以在表面Wa形成厚度小於上述液膜的基底液膜；以及使熱處理單元50執行以高於第一化合物之交聯溫度的第二溫度，加熱基底液膜的控制，藉以在表面Wa形成厚度小於上述被膜的基底被膜。
例如第二溫度可以係200~300℃、亦可係230~270℃、又可係240~260℃。所謂之以第二溫度加熱上述液膜，亦包含例如以溫度保持在第二溫度左右之熱源(例如熱板)來加熱上述液膜的動作。
控制器100例如具有塗佈控制部111、熱處理控制部112、以及照射控制部11 3，以作為功能模組。塗佈控制部111控制塗佈單元30，熱處理控制部112控制熱處理･照射單元40之熱處理部41及熱處理單元50，照射控制部113控制熱處理･照射單元40之照射部42。關於各部的處理內容之詳情，將於後文敍述。
控制器100係由一個或複數個控制用電腦所構成。控制器100例如具有圖5所示之電路120。電路120具有：一個或複數個處理器121、記憶體122、儲存器123、以及輸入輸出埠124。輸入輸出埠124係與塗佈單元30、熱處理･照射單元40及熱處理單元50之間，進行電氣訊號之輸入輸出。儲存器123具有例如硬碟等的電腦可讀取之記錄媒體。記錄媒體，記錄著用以使載運區塊2及處理區塊3執行後述之基板處理程序的程式。記錄媒體亦可以係非揮發性的半導體記憶體、磁碟及光碟等可取出之媒體。記憶體122暫時性地記錄從儲存器123之記錄媒體所載入之程式及處理器121所進行之演算結果。處理器121藉由與記憶體122協同動作而執行上述程式，而構成上述之各功能模組。
又，控制器100之硬體結構，未必限於以程式來構成各功能模組。例如控制器100之各功能模組，亦可由專用之邏輯電路或將之加以集成之ASIC(特定應用積體電路；Application Specific Integrated Circuit)所構成。
[基板處理方法] 接下來，作為基板處理方法之一例，針對藉由控制器100對載運區塊2及處理區塊3之控制所執行之基板處理程序，進行說明。此基板處理程序包含：對表面Wa塗佈第一處理液，藉以在晶圓W之表面Wa形成上述液膜；以上述第一溫度， 加熱上述液膜；以及在以第一溫度加熱上述液膜後，對上述液膜照射能量線，藉以在表面Wa形成含有上述金屬氧化物之被膜。
如圖6所示，基板處理程序依序包含步驟S01~S03。於步驟S01，控制器100使塗佈單元30執行對表面Wa塗佈第一處理液的動作，藉以在表面Wa形成上述液膜。於步驟S02，控制器100使熱處理部41執行以第一溫度加熱上述液膜之動作。步驟S03，控制器100使照射部42執行對上述液膜照射能量線之動作，藉以在表面Wa形成含有上述金屬氧化物之被膜。以下將更詳細地例示步驟S01~S03之處理。
如圖7所示，步驟S01，例如依序包含步驟S11~S17。於步驟S11，塗佈控制部111控制傳遞臂A1及搬運臂A2，藉以對塗佈單元30搬入晶圓W。例如塗佈控制部111控制傳遞臂A1，藉以從載具10取出晶圓W而配置於棚架部23；再控制搬運臂A2，藉以將配置於棚架部23的晶圓W搬入塗佈單元30內。之後塗佈控制部111控制塗佈單元30的旋轉保持機構31，藉以使保持部33保持住搬運臂A2所搬來的晶圓W。
於步驟S12，塗佈控制部111控制塗佈單元30，藉以使驅動部34開始晶圓W及保持部33之旋轉。
於步驟S13，塗佈控制部111控制處理液供給部32，藉以使其開始將第一處理液供給至旋轉中的晶圓W之表面Wa上。例如塗佈控制部111控制處理液供給部32，而在將噴嘴36配置於晶圓W之旋轉中心之上方的狀態下，從本體35對噴嘴36供給第一處理液，並由噴嘴36朝向下方釋出第一處理液。到達了表面Wa上的第一處理液，會藉由晶圓W之旋轉的離心力而擴散到晶圓W的外周側。藉此而在表面Wa上塗佈第一處理液，以在表面Wa上形成液膜LF1(參照圖7及圖8)。
於步驟S14，塗佈控制部111等待既定之塗佈期間過完。塗佈期間係由例如事前之條件設定而定出。
於步驟S15，塗佈控制部111控制處理液供給部32，藉以停止第一處理液之供給。
於步驟S16，塗佈控制部111等待既定之乾燥期間過完。乾燥期間係由例如事前之條件設定而定出。
於步驟S17，塗佈控制部111控制塗佈單元30，藉以停止驅動部34所進行之晶圓W及保持部33的旋轉。至此則完成上述步驟S01。
又，於步驟S01之處理對象的晶圓W，如圖8所示，亦可係在表面Wa具有凹凸圖案WP者。在此情況下，對表面Wa塗佈處理液的動作，包含對表面Wa中之具有凹凸的部分R1塗佈處理液的動作。
如圖9所示，上述步驟S02，例如依序包含步驟S21~S23。於步驟S21，熱處理控制部112控制搬運臂A2，藉以從塗佈單元30內搬出晶圓W，並搬入熱處理･照射單元40內。在搬運臂A2從塗佈單元30內搬出晶圓W之前，熱處理控制部112先控制旋轉保持機構31，藉以解除保持部33對晶圓W的保持狀態。在搬運臂A2將晶圓W搬入熱處理･照射單元40內之前，熱處理控制部112會先控制昇降機構44，而藉由驅動部46以使昇降頂針45上昇，使其前端部突出至熱板43上。之後熱處理控制部112就控制搬運臂A2，而使搬入至熱處理･照射單元40內的晶圓W， 配置在昇降頂針45上(參照圖9及圖10之(a))。
於步驟S22，熱處理控制部112控制昇降機構44，一邊使熱板43的溫度保持在上述第一溫度左右，一邊藉由驅動部46而使昇降頂針45下降(參照圖9及圖10之(b))。一旦藉由昇降頂針45之下降而使晶圓W設置在熱板43上，熱板43的熱度就會傳導至晶圓W，而使其熱度傳導至液膜LF1。亦即會經由晶圓W而開始液膜LF1之加熱。
於步驟S23，熱處理控制部112一邊使熱板43之溫度保持在上述第一溫度左右，一邊等待既定之加熱期間過完。加熱期間係由例如事前之條件設定而定出。藉由使熱板43之溫度保持在第一溫度左右，而使得在第一溫度下對液膜LF1之加熱，持續到過完加熱期間為止。至此則完成上述步驟S02。
如圖11所示，上述步驟S03，例如依序包含步驟S31~S35。於步驟S31，照射控制部113控制昇降機構44，以藉由驅動部46而使昇降頂針45上昇。隨著昇降頂針45之上昇，晶圓W就會從熱板43上浮起，而趨近照射部42側(參照圖11及圖12之(a))。
於步驟S32，照射控制部113控制照射部42，藉以開始對液膜LF1進行能量線之照射(參照圖11及圖12之(b))。
於步驟S33，照射控制部113等待既定之照射期間過完。照射期間係由例如事前之條件設定而預先定出。一旦在整個照射期間皆持續能量線之照射，就會促進液膜LF1所含有之上述第一化合物的交聯。具體而言，藉由照射能量線，就會脫除第一化合物的保護基，而使得交聯反應在第一化合物彼此之間進行。藉此，會在表面Wa形成含有金屬氧化物之被膜CF1(參照圖11及圖12之(c))。
於步驟S34，照射控制部113控制照射部42，以停止能量線之照射。
於步驟S35，照射控制部113控制傳遞臂A1及搬運臂A2，藉以從熱處理･照射單元40搬出晶圓W，並送回至載具10內。例如照射控制部113會控制搬運臂A2， 藉以從熱處理･照射單元40內搬出晶圓W並配置於棚架部23；再控制傳遞臂A1，藉以使配置於棚架部23之晶圓W送回載具10內。至此則完成上述步驟S03。
基板處理程序亦可更進一步地包含：在對表面Wa形成液膜LF1前，對表面Wa塗佈上述第二處理液，藉以在表面Wa形成厚度小於液膜LF1的基底液膜；以及以上述第二溫度，加熱基底液膜，藉以在表面Wa形成厚度小於被膜CF1的基底被膜。例如圖13所示，基板處理程序可以依序包含步驟S41~S45。
於步驟S41，控制器100使塗佈單元30執行對表面Wa塗佈第二處理液的動作，藉以在表面Wa形成厚度小於液膜LF1的基底液膜LF2(參照圖13及圖14(a))。
於步驟S42，控制器100使熱處理單元50執行以第二溫度加熱基底液膜LF2的動作，藉以在表面Wa形成厚度小於被膜CF1的基底被膜CF2(參照圖13及圖14 (b))。
於步驟S43~S45，除了在步驟S43之開頭，並不是從載具10、而是從熱處理單元50將晶圓W搬運至塗佈單元30內的這一點以外，皆與步驟S01~S03相同。藉由步驟S43~S45之執行，而在基底被膜CF2上形成被膜CF1(參照圖13及圖14(c))。
以下將更詳細地例示步驟S41、S42之處理。如圖15所示，於步驟S41，例如依序包含步驟S51~S57。步驟S51~S57之執行內容，係與步驟S11~S17相同；但由於係要形成厚度小於液膜LF1的基底液膜LF2，所以某個步驟中的設定條件會不同。例如於步驟S52~S55，塗佈控制部111亦可控制旋轉保持機構31，以高於步驟S12~S15之轉速來使晶圓W旋轉。於步驟S53~S55，塗佈控制部111亦可控制處理液供給部32，對表面Wa供給第一化合物之濃度低於第一處理液的第二處理液。步驟S54之塗佈期間，亦可設定成較步驟S14之塗佈期間短；步驟S56之乾燥期間，亦可設定成較步驟S16之乾燥期間長。
如圖16所示，於步驟S42，例如依序包含步驟S61~S63。於步驟S61，熱處理控制部112控制搬運臂A2，藉以從塗佈單元30內搬出晶圓W，並搬入熱處理單元50內。在搬運臂A2從塗佈單元30內搬出晶圓W之前，熱處理控制部112先控制旋轉保持機構31，藉以解除保持部33對晶圓W的保持狀態。
於步驟S62，熱處理控制部112控制熱處理單元50，以上述第二溫度加熱基底液膜LF2。例如熱處理控制部112，係藉由使熱處理單元50的熱板53之溫度保持在第二溫度左右的狀態，而將晶圓W配置於熱板53上，藉此而加熱基底液膜LF2(參照圖14之(c))。
於步驟S63，熱處理控制部112一邊使熱板之溫度保持在第二溫度左右，一邊等待既定之加熱期間過完。加熱期間係由例如事前之條件設定而定出。一旦在整個加熱期間皆持續基底液膜LF2之加熱，就會促進液膜LF2所含有之上述溶劑之揮發、及上述第一化合物之交聯。具體而言，藉由加熱，就會脫除第一化合物的保護基，而使得交聯反應在第一化合物彼此之間進行。藉此，會在表面Wa形成基底被膜CF2。至此則完成上述步驟S42。
又，亦可在步驟S43~S45之前，反覆步驟S41、S42複數次。
[本實施形態之效果] 如以上之說明，本實施形態之基板處理方法，包含：對表面Wa塗佈該溶液，藉以在晶圓W之表面Wa形成含有金屬氧化物之化合物之溶液的液膜LF1；以低於該化合物之交聯溫度的第一溫度加熱液膜LF1；以及在以第一溫度加熱液膜LF 1後，對液膜LF1照射能量線，藉以在表面Wa形成含有金屬氧化物之被膜CF1。
若藉由此基板處理方法，由於係以低於交聯溫度之第一溫度來加熱液膜LF 1，所以會在保持化合物之流動性的狀態下，促進溶劑之揮發。藉由保持化合物之流動性，會抑制在溶劑之揮發當中產生氣泡的情形。之後，藉由照射能量線而促進液膜LF1中之化合物的交聯反應，以形成含有金屬氧化物之被膜CF1。若係藉由能量線之照射，則相較於藉由加熱的情形，會有抑制伴隨交聯反應之進行所產生之液膜LF1之收縮的傾向。再者，由於在能量線之照射之前，就促進了溶劑之揮發，所以伴隨交聯反應之進行所產生之液膜LF1之收縮就更進一步地受到抑制。因此，由於伴隨液膜LF1之收縮而產生氣泡的情形受到了抑制，所以可以抑制在形成被膜CF1之際產生氣泡之情形。
圖17係形成被膜CF1後的晶圓W之剖面的電子顯微鏡照片。於圖17，(a)及(b)係以加熱而取代能量線照射，來促進液膜LF1中之化合物的交聯反應之晶圓W (以下稱為「第一樣本」)的照片。(c)及(d)係不以第一溫度進行液膜LF1之加熱，而係藉由能量線之照射來促進液膜LF1中之化合物的交聯反應之晶圓W(以下稱為「第二樣本」)的照片。(e)及(f)係在以第一溫度加熱液膜LF1後，藉由能量線之照射來促進液膜LF1中之化合物的交聯反應之晶圓W(以下稱為「第三樣本」)的照片。
如圖17之(a)及(b)所示，於第一樣本，不論是在寬度較寬的凹部H1、或是寬度較窄的凹部H2，皆有產生氣泡V。如圖17之(c)及(d)所示，於第二樣本，雖然在凹部H1實質上未產生氣泡V，但在凹部H2就有產生氣泡V。如圖17之(e)及(f)所示，於第三樣本，在凹部H1實質上未產生氣泡V，在凹部H2的氣泡V也大幅地減少了。如此這般，藉由執行以下兩者：以第一溫度加熱液膜LF1、以及以能量線之照射來形成被膜CF1，可以大幅度地抑制氣泡之產生。
上述溶液可以含有溶劑，第一溫度可以在溶劑之沸點以下。在此情況下，係藉由使溶劑之揮發和緩地進行，而可以更確實地抑制氣泡之產生。
在對表面Wa形成液膜LF1前，亦可更進一步地包含以下動作：對表面Wa塗佈上述化合物之溶液，藉以在表面Wa形成厚度小於液膜LF1的基底液膜LF2；以及以高於上述化合物之交聯溫度的第二溫度，加熱基底液膜LF2，藉以在表面Wa形成厚度小於被膜CF1的基底被膜CF2。在此情況下，由於相較於液膜LF1，基底液膜LF2的厚度較小；且相較於被膜CF1，基底被膜CF2的厚度較小；所以會在基底被膜CF2之形成過程中，抑制基底液膜LF2之收縮。因此，在基底被膜CF2之形成過程中，難以產生氣泡。藉由在形成液膜LF1之前就先形成基底被膜CF2，而在液膜LF1收縮之際，抑制液膜LF1從表面Wa之遊離。所以，會更進一步地抑制在被膜CF1之形成過程中產生氣泡的情形。因此，可以更確實地抑制氣泡之產生。
對表面Wa塗佈上述溶液的動作，亦可包含對表面Wa中之具有凹凸的部分塗佈溶液的動作。若表面Wa之表面有凹凸，則在凹部內會特別容易有伴隨液膜LF1之收縮而產生氣泡的傾向。所以，在具有凹凸之表面Wa形成被膜CF1之情況下，藉由抑制液膜LF1之收縮所得到的上述效果會更為顯著。
以上，針對實施形態進行了說明，但本發明並不限定於上述之實施形態，而可以在不脫離其要旨之範圍，進行各種變更。例如，基板處理系統1所進行之基板處理程序，亦可更進一步地包含：在形成被膜CF1後，以高於上述交聯溫度之溫度加熱被膜CF1的動作。處理對象之基板並不限定於半導體晶圓，亦可係玻璃基板、光罩基板、FPD(平面顯示器；Flat Panel Display)。作為本發明之適用對象的被膜，並不限定於上述之遮罩。例如，MOSFET(Metal Oxide Semiconductor Field Effect Transistor)之閘極絶緣膜亦可以為本發明之適用對象。
1‧‧‧基板處理系統(基板處理裝置)
2‧‧‧載運區塊
3‧‧‧處理區塊
10‧‧‧載具
10a‧‧‧開閉門
21‧‧‧載運站
22‧‧‧搬入･搬出部
22a‧‧‧開閉門
23‧‧‧棚架部
30‧‧‧塗佈單元(第一處理部)
31‧‧‧旋轉保持機構
32‧‧‧處理液供給部
33‧‧‧保持部
34‧‧‧驅動部
35‧‧‧本體
36‧‧‧噴嘴
40‧‧‧熱處理･照射單元
41‧‧‧熱處理部(第二處理部)
42‧‧‧照射部(第三處理部)
43‧‧‧熱板
44‧‧‧昇降機構
45‧‧‧昇降頂針
46‧‧‧驅動部
50‧‧‧熱處理單元(第四處理部)
53‧‧‧熱板
100‧‧‧控制器
111‧‧‧塗佈控制部
112‧‧‧熱處理控制部
113‧‧‧照射控制部
120‧‧‧電路
121‧‧‧處理器
122‧‧‧記憶體
123‧‧‧儲存器
124‧‧‧輸入輸出埠
A1‧‧‧傳遞臂
A2‧‧‧搬運臂
LF1‧‧‧液膜
CF1‧‧‧被膜
LF2‧‧‧基底液膜
CF2‧‧‧基底被膜
H1、H2‧‧‧凹部
R1‧‧‧具有凹凸之部分
V‧‧‧氣泡
W‧‧‧晶圓(基板)
Wa‧‧‧表面
WP‧‧‧凹凸圖案
S01~S03、S11~S17、S21~S23、S31~S35、S41~S45、S51~S57、S61~S63‧‧‧步驟
【圖1】基板處理系統的立體圖。 【圖2】沿著圖1中之II-II線的剖面圖。 【圖3】塗佈單元的示意圖。 【圖4】熱處理･照射單元的示意圖。 【圖5】控制器的硬體構成圖。 【圖6】繪示基板處理程序的流程圖。 【圖7】繪示液膜之形成程序的流程圖。 【圖8】繪示在液膜之形成程序中之晶圓狀態的示意圖。 【圖9】繪示液膜之加熱程序的流程圖。 【圖10】(a)、(b)繪示液膜之加熱程序中之晶圓狀態的示意圖。 【圖11】繪示被膜之形成程序的流程圖。 【圖12】(a)~(c)繪示被膜之形成程序中之晶圓狀態的流程圖。 【圖13】繪示基板處理程序之變形例的流程圖。 【圖14】(a)~(c)繪示圖13的基板處理程序中之晶圓狀態的示意圖。 【圖15】繪示基底液膜之形成程序的流程圖。 【圖16】繪示基底被膜之形成程序的流程圖。 【圖17】(a)~(f)形成被膜後的晶圓之剖面的電子顯微鏡照片。

Claims (7)

  1. 一種基板處理方法，包含以下步驟：對基板之表面塗佈含有金屬氧化物之化合物的溶液，藉以在該表面形成該溶液之液膜的步驟；以低於該化合物之交聯溫度的第一溫度，加熱該液膜的步驟；以及在以該第一溫度加熱該液膜後，對該液膜照射能量線，藉以在該基板之該表面形成含有該金屬氧化物之被膜的步驟；其中於在該表面形成該液膜之前，更包含以下步驟：對該表面塗佈該化合物之初始溶液，藉以在該表面形成厚度小於該液膜的基底液膜；及以高於該化合物之該初始溶液之交聯溫度的第二溫度加熱該基底液膜，藉以在該表面形成厚度小於該被膜的基底被膜；且該化合物之該初始溶液和該化合物之該溶液相同。
  2. 如申請專利範圍第1項之基板處理方法，其中，該溶液含有溶劑，該第一溫度係在該溶劑之沸點以下。
  3. 如申請專利範圍第1或2項之基板處理方法，其中，該金屬氧化物，包含：氧化鈦、氧化鋯、氧化鉭、氧化鎢、氧化鉿、及氧化鋁中之至少一種。
  4. 如申請專利範圍第1或2項之基板處理方法，其中，對該表面塗佈該溶液的步驟，包含對該表面中之具有凹凸的部分塗佈該溶液的動作。
  5. 如申請專利範圍第1或2項之基板處理方法，其中，該被膜係形成用以保護該表面的遮罩。
  6. 一種基板處理裝置，包含：第一處理部，用以塗佈含有金屬氧化物之化合物的溶液；第二處理部，用於以第一溫度施行熱處理；第三處理部，用以照射能量線；第四處理部，用於以第二溫度施行熱處理；及控制器；該控制器，構成為執行以下控制：使該第一處理部執行對基板之表面塗佈該溶液的控制，藉以在該表面形成該溶液之液膜；使該第二處理部執行以低於該化合物之交聯溫度的該第一溫度，加熱該液膜的控制；以及在以該第一溫度加熱該液膜後，使該第三處理部執行對該液膜照射該能量線的控制，藉以在該基板之該表面形成含有該金屬氧化物之被膜；其中在對於該第一處理部的該控制之前，該控制器更執行以下之預先控制：使該第一處理部對該表面塗佈該化合物之初始溶液，藉以在該表面形成厚度小於該液膜的基底液膜；及使該第四處理部以高於該化合物之該初始溶液之交聯溫度的該第二溫度加熱該基底液膜，藉以在該表面形成厚度小於該被膜的基底被膜；且該化合物之該初始溶液和該化合物之該溶液相同。
  7. 一種電腦可讀取之記錄媒體，記錄著用以使裝置執行如申請專利範圍第1至5項中任一項之基板處理方法的程式。
TW106110652A 2016-04-06 2017-03-30 基板處理方法、基板處理裝置及記錄媒體 TWI677916B (zh)

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