TWI674173B - Grinding device and method for manufacturing the grinding product - Google Patents

Grinding device and method for manufacturing the grinding product Download PDF

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Publication number
TWI674173B
TWI674173B TW107119625A TW107119625A TWI674173B TW I674173 B TWI674173 B TW I674173B TW 107119625 A TW107119625 A TW 107119625A TW 107119625 A TW107119625 A TW 107119625A TW I674173 B TWI674173 B TW I674173B
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Taiwan
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grinding
bubble water
ground
micro
fine bubble
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TW107119625A
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Chinese (zh)
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TW201910057A (en
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高森雄大
黄善夏
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日商Towa股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Abstract

本發明涉及一種磨削裝置及磨削品的製造方法。根據本發明,減少磨石的修整次數。磨削裝置具備以環狀配置有磨石且可旋轉的磨削部。磨石是以在磨削對象物的磨削過程中對磨削對象物進行磨削的磨削區域與不對磨削對象物進行磨削的非磨削區域共存的方式配置。磨削裝置還具備以生成微細氣泡水的方式構成的微細氣泡水生成器、及以能對非磨削區域的磨石供給微細氣泡水的方式構成的微細氣泡水供給部。The present invention relates to a grinding device and a method for manufacturing a ground product. According to the present invention, the number of dressings of the grindstone is reduced. The grinding apparatus includes a grinding unit in which a grinding stone is arranged in a ring shape and is rotatable. The grinding stone is arranged so that a grinding area where the grinding object is ground during the grinding process of the grinding object and a non-grinding area where the grinding object is not ground. The grinding apparatus further includes a micro-bubble water generator configured to generate micro-bubble water, and a micro-bubble water supply unit configured to supply micro-bubble water to a grinding stone in a non-grinding area.

Description

磨削裝置及磨削品的製造方法Grinding device and method for manufacturing ground product

本發明涉及一種磨削裝置及磨削品的製造方法。The present invention relates to a grinding device and a method for manufacturing a ground product.

例如在日本專利特開2014-165339號公報(專利文獻1)中公開了以下的磨削方法。首先,利用磨削裝置的卡盤台(chuck table)吸引保持層疊晶圓(wafer)的半導體元件晶圓側,使密封樹脂露出。然後,將不含磨粒的磨削液供給至層疊晶圓的密封樹脂面上。接下來,使吸附保持層疊晶圓的卡盤台旋轉,並且一面使在環狀基台的下端固著有多個磨削磨石的磨削輪旋轉,一面使磨削磨石與密封樹脂的表面接觸,實施密封樹脂的磨削。For example, Japanese Patent Application Laid-Open No. 2014-165339 (Patent Document 1) discloses the following grinding method. First, a chuck table of a grinding device is used to suck and hold a semiconductor element wafer side of a laminated wafer to expose a sealing resin. Then, a grinding liquid containing no abrasive particles is supplied to the sealing resin surface of the laminated wafer. Next, the chuck table that sucks and holds the stacked wafers is rotated, while a grinding wheel having a plurality of grinding stones fixed to the lower end of the ring-shaped base is rotated, while the grinding stones and the sealing resin are rotated. Surface contact and grinding of sealing resin are performed.

然而,專利文獻1所記載的磨削方法中,隨著對密封樹脂進行磨削,磨削磨石的磨削性因磨削磨石的堵塞等而降低,需要進行磨削磨石的修整(dressing)。但是,磨削磨石的修整耗費時間及成本,因此期望減少磨削磨石的修整次數。However, in the grinding method described in Patent Document 1, as the sealing resin is ground, the grindability of the grindstone is reduced due to the clogging of the grindstone, etc., and it is necessary to dress the grindstone ( dressing). However, since the dressing of the grinding stone takes time and costs, it is desirable to reduce the number of dressing of the grinding stone.

根據此處公開的實施形態,能提供一種磨削裝置,其具備以環狀配置有磨石且可旋轉的磨削部,並且磨石是以在磨削對象物的磨削過程中對磨削對象物進行磨削的磨削區域與不對磨削對象物進行磨削的非磨削區域共存的方式配置,磨削裝置還具備:微細氣泡(fine bubble)水生成器,以生成微細氣泡水的方式構成;以及微細氣泡水供給部,以能對非磨削區域的磨石供給微細氣泡水的方式構成。According to the embodiment disclosed herein, it is possible to provide a grinding apparatus including a grinding unit in which a grinding stone is arranged in a ring shape and is rotatable, and the grinding stone is used for grinding during grinding of an object to be ground. The grinding area where the object is ground is arranged so as to coexist with the non-grinding area where the object is not ground. The grinding device also includes a fine bubble water generator to generate fine bubble water. And a micro-bubble water supply unit configured to supply micro-bubble water to the grindstone in the non-grinding area.

根據此處公開的實施形態,能提供一種磨削品的製造方法,其包括使以環狀配置有磨石的磨削部旋轉而利用磨石對磨削對象物進行磨削的步驟,且磨石是以在磨削對象物的磨削過程中對磨削物件進行磨削的磨削區域與不對磨削對象物進行磨削的非磨削區域共存的方式配置,並且所述磨削品的製造方法包括以下步驟:利用微細氣泡水生成器而生成微細氣泡水,並供給至微細氣泡水供給部;以及對非磨削區域的磨石供給微細氣泡水。According to the embodiment disclosed herein, it is possible to provide a method for manufacturing a grinding article including a step of rotating a grinding unit in which a grinding stone is arranged in a ring shape to grind an object to be ground using the grinding stone, and grinding The stone is arranged in such a manner that the grinding area where the grinding object is ground during the grinding process of the grinding object and the non-grinding area where the grinding object is not ground are coexisted. The manufacturing method includes the steps of generating fine bubble water using a fine bubble water generator and supplying the fine bubble water to a fine bubble water supply unit; and supplying fine bubble water to a grindstone in a non-grinding area.

本發明的以上所述及其他目的、特徵、方面及優點將根據與附圖關聯而理解的與本發明有關的以下詳細說明而明確。The above and other objects, features, aspects, and advantages of the present invention will be made clear from the following detailed description of the present invention which is understood in connection with the accompanying drawings.

以下,對實施形態進行說明。此外,在用於說明實施形態的圖式中,相同參照符號表示相同部分或相應部分。Hereinafter, embodiments will be described. In the drawings for explaining the embodiments, the same reference numerals denote the same or corresponding parts.

圖1中示出作為本發明的磨削裝置的一例的實施形態的磨削裝置的示意性側面圖。實施形態的磨削裝置具備:底座1;柱部10,從底座1的端部區域沿Z方向(鉛垂向上方向)延伸;連結部9,從柱部10的與底座1側的端部為相反側的端部沿X方向延伸;馬達8,安裝在連結部9的X方向端部;主軸(spindle)7,一端安裝在馬達8上,且沿Z方向(鉛垂向下方向)延伸;以及磨削部11,安裝在主軸7的與馬達8側的端部為相反側的端部。磨削部11以沿Z方向延伸的軸為中心而可旋轉。FIG. 1 is a schematic side view of a grinding apparatus according to an embodiment as an example of the grinding apparatus of the present invention. A grinding device according to an embodiment includes a base 1, a pillar portion 10 extending from an end region of the base 1 in the Z direction (vertical upward direction), and a connecting portion 9 from an end of the pillar portion 10 to the base 1 side. The end on the opposite side extends in the X direction; the motor 8 is mounted on the X direction end of the connecting portion 9; the spindle 7 is mounted on the motor 8 at one end and extends in the Z direction (vertical downward direction); And the grinding part 11 is attached to the end part of the main shaft 7 opposite to the end part of the motor 8 side. The grinding section 11 is rotatable around an axis extending in the Z direction.

另外,實施形態的磨削裝置具備:平台2,在底座1上沿X方向(水準方向)與柱部10空開間隔而配置,且用於設置磨削對象物3;以及磨削液供給部4,以對磨削對象物3的磨削面供給磨削液的方式構成。磨削液供給部4只要能對磨削對象物3的磨削面供給磨削液,則其構成並無特別限定。In addition, the grinding apparatus according to the embodiment includes a platform 2 which is arranged on the base 1 along the X direction (level direction) and spaced apart from the column portion 10 and is used to provide a grinding object 3; 4. It is comprised so that a grinding liquid may be supplied to the grinding surface of the grinding object 3. The configuration of the grinding liquid supply unit 4 is not particularly limited as long as it can supply the grinding liquid to the grinding surface of the grinding target 3.

磨削部11具備具有圓形狀的底面6a的輪固定件6、以及安裝在輪固定件6的底面6a的環狀的磨削輪16。磨削輪16具備環狀的環狀基台15、以及在環狀基台15上相互空開間隔而配置的多個磨石5。磨石5是以在磨削對象物3的磨削過程中對磨削對象物3進行磨削的磨削區域41與不對磨削對象物3進行磨削的非磨削區域42共存的方式配置。例如,環狀的磨削輪16能以在輪固定件6的底面6a的周緣互相空開間隔而配置有多個磨石5的方式安裝。此外,實施形態的磨削裝置也具備包圍磨削部11的外周的外蓋(未圖示)。The grinding unit 11 includes a wheel fixture 6 having a circular bottom surface 6 a and an annular grinding wheel 16 attached to the bottom surface 6 a of the wheel fixture 6. The grinding wheel 16 includes a ring-shaped ring base 15 and a plurality of grinding stones 5 arranged on the ring-shaped base 15 at a distance from each other. The grinding stone 5 is arranged so that a grinding area 41 that grinds the grinding object 3 and a non-grinding area 42 that does not grind the grinding object 3 coexist in the grinding process of the grinding object 3. . For example, the ring-shaped grinding wheel 16 can be mounted so that a plurality of grinding stones 5 are arranged at intervals on the periphery of the bottom surface 6 a of the wheel holder 6. The grinding device according to the embodiment also includes a cover (not shown) that surrounds the outer periphery of the grinding section 11.

另外,實施形態的磨削裝置具備:微細氣泡水供給部12,以從外蓋的一部分沿Z方向(鉛垂向下方向)下垂的方式安裝;微細氣泡水生成器14,用於生成微細氣泡水;以及軟管13,用於將微細氣泡水供給部12與微細氣泡水生成器14連結並從微細氣泡水生成器14向微細氣泡水供給部12供給微細氣泡水。此外,從抑制清洗後的微細氣泡水的排水附著於磨削對象物3的觀點來看,微細氣泡水供給部12的微細氣泡水排出部12c優選位於與磨削對象物3的設置部位對應的區域22以外的區域(例如區域23)的上方。In addition, the grinding apparatus according to the embodiment includes a micro-bubble water supply unit 12 mounted so as to sag from a part of the outer cover in the Z direction (vertical downward direction), and a micro-bubble water generator 14 for generating fine bubbles. Water; and a hose 13 for connecting the micro-bubble water supply unit 12 to the micro-bubble water generator 14 and supplying the micro-bubble water from the micro-bubble water generator 14 to the micro-bubble water supply unit 12. In addition, from the viewpoint of suppressing the drainage of the fine bubble water after cleaning from adhering to the grinding object 3, the fine bubble water discharge portion 12 c of the fine bubble water supply portion 12 is preferably located corresponding to the installation position of the grinding object 3. Above a region other than the region 22 (for example, the region 23).

微細氣泡水生成器14只要能生成微細氣泡水並將微細氣泡水供給至微細氣泡水供給部12,則其構成並無特別限定。微細氣泡水為含有直徑小於或等於100 μm的氣泡即微細氣泡的水。微細氣泡包含直徑大於或等於1 μm且小於或等於100 μm的微氣泡、及直徑小於1 μm的超微細氣泡,也包含被稱為奈米氣泡及微奈米氣泡的氣泡。The structure of the fine bubble water generator 14 is not particularly limited as long as it can generate fine bubble water and supply the fine bubble water to the fine bubble water supply unit 12. Micro-bubble water is water containing micro-bubbles, ie, bubbles having a diameter of 100 μm or less. The micro-bubbles include micro-bubbles having a diameter of 1 μm or more and 100 μm or less, and ultra-fine bubbles having a diameter of less than 1 μm, and also include bubbles called nano-bubbles and micro-nano bubbles.

圖2中示出圖1所示的輪固定件6的底面6a的示意性平面圖。如圖2所示,輪固定件6的底面6a為圓形狀,且使外蓋21位於將圓形狀的輪固定件6的底面6a的外周包圍的位置。A schematic plan view of the bottom surface 6 a of the wheel fixing member 6 shown in FIG. 1 is shown in FIG. 2. As shown in FIG. 2, the bottom surface 6 a of the wheel fixture 6 is circular, and the outer cover 21 is located at a position that surrounds the outer periphery of the bottom surface 6 a of the round-shaped wheel fixture 6.

圖3中示出圖1所示的磨削輪16的示意性平面圖。如圖3所示那樣,磨削輪16具備環狀的環狀基台15、以及環狀基台15上的多個磨石5。多個磨石5是分別與鄰接的磨石5空開間隔,且以沿著環狀基台15的形狀的方式配置成環狀。A schematic plan view of the grinding wheel 16 shown in FIG. 1 is shown in FIG. 3. As shown in FIG. 3, the grinding wheel 16 includes an annular annular base 15 and a plurality of grinding stones 5 on the annular base 15. The plurality of millstones 5 are spaced apart from the adjacent millstones 5 and are arranged in a ring shape along the shape of the ring base 15.

圖4中示出對將磨削輪16安裝於輪固定件6的方法的一例進行圖解的示意性側面圖。磨削輪16例如是將未配置磨石5的一側的環狀基台15的表面安裝於輪固定件6的底面6a。磨削輪16例如是通過螺固等方法而固定於輪固定件6的底面6a。FIG. 4 is a schematic side view illustrating an example of a method of attaching the grinding wheel 16 to the wheel holder 6. The grinding wheel 16 is, for example, a surface of the ring-shaped base 15 on the side where the grindstone 5 is not disposed, and is attached to the bottom surface 6 a of the wheel holder 6. The grinding wheel 16 is fixed to the bottom surface 6 a of the wheel holder 6 by, for example, a screwing method.

圖5中示出圖1所示的微細氣泡水供給部12的示意性平面圖。如圖5所示那樣,微細氣泡水供給部12具備微細氣泡水供給部安裝部12a、微細氣泡水收容部12b、以及將微細氣泡水供給部安裝部12a與微細氣泡水收容部12b連結的連結部12g。微細氣泡水供給部12(本實施形態中為微細氣泡水供給部安裝部12a、微細氣泡水收容部12b以及連結部12g)的平面形狀例如能設定為彎曲成圖5所示那樣的弧狀,但不限定於此形狀。FIG. 5 is a schematic plan view of the fine bubble water supply unit 12 shown in FIG. 1. As shown in FIG. 5, the micro-bubble water supply unit 12 includes a micro-bubble water supply unit mounting portion 12a, a micro-bubble water storage unit 12b, and a connection connecting the micro-bubble water supply unit mounting portion 12a and the micro-bubble water storage unit 12b. 12g. The planar shape of the micro-bubble water supply unit 12 (the micro-bubble water supply unit mounting portion 12a, the micro-bubble water storage unit 12b, and the connection portion 12g in this embodiment) can be set to be curved into an arc shape as shown in FIG. 5, for example. However, it is not limited to this shape.

微細氣泡水供給部安裝部12a為沿鉛垂向上方向延伸的壁狀構件,且通過連結部12g而與微細氣泡水收容部12b連結。因此,在微細氣泡水供給部安裝部12a與微細氣泡水收容部12b之間僅以連結部12g的程度而空開間隔。The micro-bubble water supply portion mounting portion 12 a is a wall-shaped member extending in the vertical upward direction, and is connected to the micro-bubble water storage portion 12 b by a connecting portion 12 g. Therefore, the fine bubble water supply part mounting part 12a and the fine bubble water storage part 12b are spaced apart only by the connection part 12g.

微細氣泡水收容部12b具備底部12e、從底部12e的兩端沿鉛垂向上方向延伸的一對壁部12f、以及以貫穿底部12e的上表面與下表面之間的方式構成的微細氣泡水供給孔31。壁部12f的高度例如能設為在微細氣泡水收容部12b中收容有微細氣泡水時能將磨削輪16的磨石5浸漬在微細氣泡水中的高度。如圖5所示那樣,微細氣泡水供給孔31例如是互相空開間隔而在底部12e中設有多個,但例如也可將數量設為一個等而不限定於所述構成。The micro-bubble water containing portion 12b includes a bottom portion 12e, a pair of wall portions 12f extending vertically from both ends of the bottom portion 12e, and a micro-bubble water supply configured to penetrate between the upper and lower surfaces of the bottom portion 12e.孔 31。 Hole 31. The height of the wall portion 12f can be, for example, a height at which the grindstone 5 of the grinding wheel 16 can be immersed in the fine bubble water when the fine bubble water is contained in the fine bubble water containing portion 12b. As shown in FIG. 5, the micro-bubble water supply holes 31 are, for example, provided in the bottom portion 12 e at a distance from each other. However, the number may be one, for example, and is not limited to the configuration.

圖6中示出圖5所示的微細氣泡水供給部12的端面的示意性平面圖。如圖6所示那樣,微細氣泡水收容部12b的端面具有微細氣泡水排出部12c。微細氣泡水排出部12c成為將微細氣泡水收容部12b中收容的微細氣泡水排出到微細氣泡水供給部12的外部的開口。微細氣泡水收容部12b的端面也可具有防止微細氣泡水向外部排出的端面壁部12d。FIG. 6 is a schematic plan view of an end surface of the fine bubble water supply unit 12 shown in FIG. 5. As shown in FIG. 6, the end face of the fine bubble water storage portion 12 b has a fine bubble water discharge portion 12 c. The fine bubble water discharge portion 12 c is an opening for discharging the fine bubble water contained in the fine bubble water storage portion 12 b to the outside of the fine bubble water supply portion 12. The end surface of the micro-bubble water storage portion 12b may include an end-face wall portion 12d that prevents the micro-bubble water from being discharged to the outside.

圖7中示出對實施形態的磨削品的製造方法進行圖解的示意性截面圖,所述實施形態的磨削品的製造方法為使用實施形態的磨削裝置的磨削品的製造方法的一例。實施形態的磨削品的製造方法例如能如以下那樣進行。FIG. 7 is a schematic cross-sectional view illustrating a method of manufacturing a ground product according to an embodiment in which the method of manufacturing a ground product is a method of manufacturing a ground product using the grinding apparatus of the embodiment. An example. The manufacturing method of the grinding | polishing product which concerns on embodiment can be performed as follows, for example.

首先,將微細氣泡水供給部12的微細氣泡水供給部安裝部12a安裝於包圍磨削部11的周圍的外蓋21。然後,在平台2上設置磨削對象物3。First, the micro-bubble water supply unit mounting portion 12 a of the micro-bubble water supply unit 12 is attached to an outer cover 21 that surrounds the periphery of the grinding unit 11. Then, the grinding target 3 is set on the stage 2.

作為磨削對象物3,例如能使用具備支持構件3a及支持構件3a上的密封樹脂3b的磨削對象物。支持構件3a為支持晶片及/或薄膜等的構件,且例如包含選自由導線架(lead frame)、基材(substrate)、內插器(interposer)、半導體基板(矽晶片等)、金屬基板、玻璃基板、陶瓷基板、樹脂基板及佈線基板所組成的群組中的至少一個基板,可實施佈線也可不實施佈線。密封樹脂3b為將由支持構件3a所支持的晶片及/或薄膜等的至少一面密封的樹脂。As the grinding target 3, for example, a grinding target including a support member 3a and a sealing resin 3b on the support member 3a can be used. The support member 3a is a member that supports a wafer and / or a film, and includes, for example, a member selected from a lead frame, a substrate, an interposer, a semiconductor substrate (a silicon wafer, etc.), a metal substrate, At least one substrate in the group consisting of a glass substrate, a ceramic substrate, a resin substrate, and a wiring substrate may or may not be wired. The sealing resin 3b is a resin that seals at least one surface of a wafer, a film, or the like supported by the supporting member 3a.

接下來,利用微細氣泡水生成器14而生成微細氣泡水32,並供給至微細氣泡水供給部12。微細氣泡水32是經過設於微細氣泡水收容部12b的底部12e的微細氣泡水供給孔31而供給至微細氣泡水收容部12b。Next, the fine bubble water generator 32 generates the fine bubble water 32 and supplies it to the fine bubble water supply unit 12. The micro-bubble water 32 is supplied to the micro-bubble water container 12b through a micro-bubble water supply hole 31 provided in the bottom 12e of the micro-bubble water container 12b.

然後,使磨削部11以軸43為中心向第一方向45旋轉,並且使設置有磨削對象物3的平台2以軸44為中心向與第一方向45成為相反方向的第二方向46旋轉。此時,磨削區域41的磨石5對磨削對象物3進行磨削,另一方面,非磨削區域42的磨石5並未對磨削對象物3進行磨削,而是浸漬在微細氣泡水收容部12b中收容的微細氣泡水32中。此處,也能使磨削部11以軸43為中心向第二方向46旋轉並且使平台2以軸44為中心向第一方向45旋轉,或也能將磨削部11的旋轉方向及平台2的旋轉方向設為第一方向45或第二方向46的相同方向。Then, the grinding unit 11 is rotated in the first direction 45 with the shaft 43 as the center, and the stage 2 on which the grinding object 3 is provided is moved in the second direction 46 opposite to the first direction 45 with the shaft 44 as the center. Spin. At this time, the grinding stone 5 in the grinding area 41 grinds the object 3 to be grounded. On the other hand, the grinding stone 5 in the non-grinding area 42 does not grind the object 3 to be ground, but is immersed in The micro-bubble water storage portion 12b is contained in the micro-bubble water 32. Here, the grinding section 11 can also be rotated in the second direction 46 about the shaft 43 as the center, and the table 2 can be rotated in the first direction 45 about the shaft 44 as the center, or the rotation direction and the table of the grinding section 11 can be rotated. The rotation direction of 2 is set to the same direction as the first direction 45 or the second direction 46.

磨削對象物3的磨削例如能以至少磨削密封樹脂3b的一部分以減小磨削對象物3的厚度的方式進行。另外,圖7中雖未圖示,但也能一面從磨削液供給部4向磨削對象物3的磨削面供給磨削液,一面對磨削對象物3進行磨削。另外,非磨削區域42的磨石5是浸漬在微細氣泡水32中,但也能在磨削對象物3的磨削過程中,從配置有磨削對象物3的區域22以外的區域23的上方經過微細氣泡水供給部12的端面的微細氣泡水排出部12c而排出微細氣泡水32。The grinding of the grinding target 3 can be performed, for example, by grinding at least a part of the sealing resin 3 b to reduce the thickness of the grinding target 3. Although not shown in FIG. 7, the grinding liquid can be supplied from the grinding liquid supply unit 4 to the grinding surface of the grinding object 3 while grinding the grinding object 3. Although the grindstone 5 in the non-grinding area 42 is immersed in the fine bubble water 32, it is also possible to grind the grinding target 3 from the area 23 other than the area 22 in which the grinding target 3 is arranged. The fine bubble water 32 is discharged through the fine bubble water discharge part 12c of the end surface of the fine bubble water supply part 12 above.

像這樣,如圖8的示意性立體圖及圖9的示意性平面圖所示那樣,實施形態的磨削部11的磨石5例如交替進行磨削區域41中的磨削對象物3的磨削、與非磨削區域42中的微細氣泡水32中的浸漬。由此,與未將實施形態的磨削部11的磨石5浸漬在微細氣泡水32中的情況相比,能減少磨石5的堵塞等磨石5的磨削性降低現象的產生頻率。因此,能減少停止實施形態的磨削裝置而修整磨石5的次數。另外,利用浸漬在微細氣泡水32中後的磨石5對磨削對象物3進行磨削,並在磨削對象物3的磨削後使其再次浸漬在微細氣泡水32中,因此能維持磨削對象物3的高磨削性。In this way, as shown in the schematic perspective view of FIG. 8 and the schematic plan view of FIG. 9, the grinding stone 5 of the grinding section 11 of the embodiment alternates, for example, grinding of the grinding target 3 in the grinding area 41, And the impregnation in the fine bubble water 32 in the non-grinding area 42. This makes it possible to reduce the frequency of occurrence of the sharpening of the grindstone 5 such as clogging of the grindstone 5 as compared to a case where the grindstone 5 of the grinding unit 11 of the embodiment is not immersed in the fine bubble water 32. Therefore, it is possible to reduce the number of times that the grinding device 5 is stopped and the grinding stone 5 is trimmed. In addition, the grinding object 3 is ground by the grindstone 5 immersed in the fine bubble water 32, and after the grinding of the grinding object 3, it is immersed in the fine bubble water 32 again, so it can be maintained High grinding performance of the grinding target 3.

另外,例如在磨削對象物3為半導體封裝的情況下,與現有的矽晶圓的磨削不同,例如有時需要將半導體、金屬及樹脂等不同材料同時磨削的工藝。但是,在利用磨石5同時磨削不同材料的情況下,磨石5容易產生堵塞,因此可認為,對於需要同時磨削不同材料的工藝的半導體封裝等磨削對象物3的磨削來說,實施形態的磨削裝置及磨削品的製造方法特別有效。In addition, for example, when the grinding target 3 is a semiconductor package, unlike conventional silicon wafer grinding, a process of simultaneously grinding different materials such as semiconductors, metals, and resins may be required. However, when grinding different materials at the same time using the grindstone 5, the grindstone 5 is prone to blockage. Therefore, it can be considered that for grinding of the grinding object 3 such as a semiconductor package that requires a process of grinding different materials simultaneously In particular, the grinding apparatus and the method for manufacturing a ground product according to the embodiment are particularly effective.

此外,微細氣泡水32中的微細氣泡密度優選大於或等於1000個/毫升(ml)。此情況下,能提高磨石5的清洗效果。另外,微細氣泡水32中的微細氣泡密度也能設為大於或等於100萬個/ml,也能設為大於或等於10億個/ml。微細氣泡密度例如能利用冰包埋法(ice embedding method)的冷凍透射式電子顯微鏡來進行測定。In addition, the density of the fine bubbles in the fine bubble water 32 is preferably 1000 cells / ml (ml) or more. In this case, the cleaning effect of the grindstone 5 can be improved. In addition, the density of the fine bubbles in the fine bubble water 32 may be set to be 1 million pieces / ml or more, and may also be set to be 1 billion pieces / ml or more. The fine bubble density can be measured using, for example, a freezing transmission electron microscope of an ice embedding method.

另外,如圖10的示意性放大截面圖所示那樣,也能一面從微細氣泡水供給孔31使微細氣泡水朝箭頭51的方向噴出一面使磨石5浸漬在微細氣泡水32中。In addition, as shown in a schematic enlarged cross-sectional view of FIG. 10, the millstone 5 can be immersed in the fine bubble water 32 while the fine bubble water is ejected from the fine bubble water supply hole 31 in the direction of the arrow 51.

另外,如圖11的示意性平面圖所示那樣,從微細氣泡水供給孔31的微細氣泡水的噴出也能朝與磨削部11的旋轉方向即第一方向45為相反方向的第二方向46進行。此情況下,能想到能提高微細氣泡水32撞擊磨石5時的壓力,因此能提高微細氣泡水32對磨石5的由浸漬所得的清洗效果。In addition, as shown in the schematic plan view of FIG. 11, the ejection of the fine bubble water from the fine bubble water supply hole 31 can also be directed to the second direction 46 that is opposite to the first direction 45 that is the rotation direction of the grinding unit 11. get on. In this case, it is conceivable that the pressure when the fine bubble water 32 hits the grindstone 5 can be increased, so that the cleaning effect of the fine bubble water 32 on the grindstone 5 by immersion can be improved.

[實施例] <實施例1> 首先,如圖7所示那樣,將磨削裝置的微細氣泡水供給部12的微細氣泡水供給部安裝部12a固定於包圍磨削部11的周圍的外蓋21,在平台2上設置磨削對象物3。此處,關於磨削對象物3,使用在支持構件3a上具備包含混入有二氧化矽作為填料的樹脂的密封樹脂3b的磨削對象物。[Example] <Example 1> First, as shown in FIG. 7, the fine bubble water supply portion mounting portion 12 a of the fine bubble water supply portion 12 of the grinding device is fixed to an outer cover surrounding the grinding portion 11. 21. A grinding object 3 is set on the platform 2. Here, as the grinding target 3, a grinding target provided with a sealing resin 3b including a resin mixed with silicon dioxide as a filler on the support member 3a is used.

然後,利用微細氣泡水生成器14而生成微細氣泡水32,經過設於微細氣泡水收容部12b的底部12e的微細氣泡水供給孔31對微細氣泡水收容部12b供給微細氣泡水。關於微細氣泡水生成器14,使用OK工程(OK Engineering)有限公司製造的安裝有微細氣泡產生噴嘴(產品名:OKE-MB04FJA)的供水裝置。Then, the micro-bubble water generator 32 generates micro-bubble water 32, and supplies the micro-bubble water container 12b to the micro-bubble water container 12b through the micro-bubble water supply hole 31 provided in the bottom 12e of the micro-bubble water container 12b. As the micro-bubble water generator 14, a water supply device equipped with a micro-bubble generating nozzle (product name: OKE-MB04FJA) manufactured by OK Engineering Co., Ltd. was used.

接著,如圖4所示那樣,通過螺固將如圖3所示在環狀基台15上空開間隔而配置有多個磨石5的磨削輪16安裝於圖2所示的輪固定件6的底面6a,構成磨削部11。Next, as shown in FIG. 4, a grinding wheel 16 in which a plurality of grinding stones 5 are arranged at intervals on the annular base 15 as shown in FIG. 3 is attached to the wheel fixture shown in FIG. 2 by screwing. The bottom surface 6 a of 6 constitutes a grinding section 11.

然後,如圖7所示那樣,一面從磨削液供給部4向磨削對象物3的磨削面供給純水作為磨削液,一面使磨削部11以軸43為中心向第一方向45旋轉,並且使設置有磨削對象物3的平台2以軸44為中心向與第一方向45成為相反方向的第二方向46旋轉。由此,對於磨削輪16的磨石5,交替進行磨削區域41中的磨削對象物3的磨削、與非磨削區域42中的微細氣泡水收容部12b的微細氣泡水32中的浸漬。磨削對象物3的磨削是以至少磨削密封樹脂3b的一部分以減小磨削對象物3的厚度的方式進行。另外,磨削對象物3的磨削過程中,從配置有磨削對象物3的區域22以外的區域23的上方經過微細氣泡水供給部12的端面的微細氣泡水排出部12c排出微細氣泡水32。Then, as shown in FIG. 7, while supplying pure water as the grinding liquid from the grinding liquid supply unit 4 to the grinding surface of the grinding object 3, the grinding unit 11 is oriented in the first direction with the shaft 43 as the center. 45, and the stage 2 on which the grinding target 3 is provided is rotated around the axis 44 in the second direction 46 which is opposite to the first direction 45. As a result, the grinding stone 5 of the grinding wheel 16 alternates between the grinding of the grinding object 3 in the grinding area 41 and the fine bubble water 32 in the fine bubble water container 12 b in the non-grinding area 42. Of impregnation. The grinding of the grinding target 3 is performed by grinding at least a part of the sealing resin 3 b to reduce the thickness of the grinding target 3. In addition, during the grinding process of the grinding object 3, the fine bubble water is discharged from above the area 23 other than the area 22 where the grinding object 3 is arranged to pass through the fine bubble water discharge portion 12c of the end face of the fine bubble water supply portion 12 32.

此外,磨削條件如以下的表1所述。表1的“進給速度[μm/分]”一欄是指在磨削對象物3的磨削過程中,使磨削部11向平台2側沿鉛垂方向前進的每一分鐘的距離。另外,表1的“進給量[μm]”一欄是指在磨削對象物3的磨削過程中,使磨削部11向平台2側沿鉛垂方向前進的總距離。另外,表1的“無火花磨削(spark out)[秒]”一欄是指在磨削對象物3的磨削中使磨削部11向平台2側沿鉛垂方向前進的移動停止,維持磨削部11及平台2的旋轉的狀態的時間[秒]。另外,表1的“n數”一欄是指樣本數。表1的“n數”為“4”是指對四個樣本以相同條件進行磨削,四個樣本的測定資料的平均值為後述表2所示的數值。The grinding conditions are as described in Table 1 below. The column of “Feeding Speed [μm / min]” in Table 1 refers to the distance per minute during which the grinding section 11 advances the grinding section 11 to the platform 2 side in the vertical direction during the grinding of the grinding target 3. The “Feed Amount [μm]” column in Table 1 refers to the total distance that the grinding section 11 advances in the vertical direction toward the platform 2 side during the grinding of the grinding target 3. The "spark out [second]" column in Table 1 refers to stopping the movement of the grinding part 11 in the vertical direction toward the platform 2 side during the grinding of the grinding object 3, Time [sec] for maintaining the rotating state of the grinding section 11 and the table 2. The "n number" column in Table 1 refers to the number of samples. The "n number" in Table 1 is "4", which means that four samples are ground under the same conditions, and the average value of the measurement data of the four samples is the value shown in Table 2 described later.

[表1] [Table 1]

如所述那樣,對以表1所記載的條件將磨削對象物3磨削後的實施例1的磨石5的磨石磨損率[%]及磨削對象物3的磨削面的表面粗糙度Ra[μm]進行測定。結果,實施例1的磨石磨損率為19.4[%],且表面粗糙度Ra為0.188[μm]。 As described above, the grinding stone wear rate [%] of the grinding stone 5 of Example 1 after grinding the grinding target 3 under the conditions described in Table 1 and the surface of the grinding surface of the grinding target 3 Roughness Ra [μm] was measured. As a result, the abrasive stone wear rate of Example 1 was 19.4 [%], and the surface roughness Ra was 0.188 [μm].

磨石磨損率是通過以下的式(I)而算出。 The grinding stone wear rate is calculated by the following formula (I).

磨石磨損率[%]={100×(磨石5的磨損量)}/(進給量)…(I) Grindstone wear rate [%] = {100 × (wear amount of grindstone 5)} / (feed amount) ... (I)

另外,表面粗糙度Ra是利用日本工業標準(Japanese Industrial Standards,JIS)B0601:2013(國際標準組織(International Organization for Standardization,ISO)4287:1997)中記載的方法算出。 The surface roughness Ra is calculated by a method described in Japanese Industrial Standards (JIS) B0601: 2013 (International Organization for Standardization (ISO) 4287: 1997).

<實施例2> <Example 2>

在實施例2中,代替OK工程有限公司製造的安裝有微細氣泡產生噴嘴的供水裝置,而使用岡本工作機械製作所股份有限公司製造的安裝有微細氣泡產生噴嘴(產品名:格林德-比克斯(GRIND-BIX))的供水器作為微細氣泡水生成器14,除此以外,以與實施例1相同的磨削品的製造方法及相同的磨削條件將磨削對象物3磨削。 In Example 2, instead of a water supply device equipped with a fine bubble generating nozzle manufactured by OK Engineering Co., Ltd., a fine bubble generating nozzle (product name: Grindel Bix) manufactured by Okamoto Work Machinery Co., Ltd. was used. (GRIND-BIX)), except that the micro-bubble water generator 14 is used, and the grinding target 3 is ground by the same method of manufacturing a ground product and the same grinding conditions as in Example 1.

然後,對利用與實施例1相同的方法將磨削對象物3磨削後的實施例2的磨石5的磨石磨損率[%]及磨削對象物3的磨削面的表面粗糙度Ra[μm]進行測定。結果,實施例2的磨石磨損率為15.2[%],且表面粗糙度Ra為0.147[μm]。 Then, the grinding stone wear rate [%] of the grinding stone 5 of Example 2 after grinding the grinding target 3 by the same method as in Example 1 and the surface roughness of the grinding surface of the grinding target 3 Ra [μm] was measured. As a result, the abrasive stone wear rate of Example 2 was 15.2 [%], and the surface roughness Ra was 0.147 [μm].

<比較例1> <Comparative example 1>

比較例1中,不使用微細氣泡水生成器14產生微細氣泡,除 此以外,以與實施例1及實施例2相同的方法及相同的條件將磨削對象物3磨削。 In Comparative Example 1, fine bubbles were not generated using the fine bubble water generator 14, except for Other than that, the object 3 to be ground was ground in the same method and under the same conditions as those in the first and second embodiments.

然後,對以與實施例1及實施例2相同的方法將磨削對象物3磨削後的比較例1的磨石5的磨石磨損率[%]及磨削對象物3的磨削面的表面粗糙度Ra[μm]進行測定。結果,比較例1的磨石磨損率為20.7[%],且表面粗糙度Ra為0.228[μm]。 Then, the grinding stone wear rate [%] of the grinding stone 5 of Comparative Example 1 after grinding the grinding target 3 in the same manner as in Examples 1 and 2 and the grinding surface of the grinding target 3 The surface roughness Ra [μm] was measured. As a result, the abrasive stone wear rate of Comparative Example 1 was 20.7 [%], and the surface roughness Ra was 0.228 [μm].

<總結> <Summary>

以下的表2中,將實施例1、實施例2及比較例1的磨石5的磨石磨損率[%]及磨削對象物3的磨削面的表面粗糙度Ra[μm]與微細氣泡的有無、微細氣泡水生成器14的種類、進給量[μm]、及進給速度[μm/分]一併示出。 In Table 2 below, the grinding stone abrasion rate [%] of the grinding stone 5 of Example 1, Example 2 and Comparative Example 1 and the surface roughness Ra [μm] of the grinding surface of the grinding object 3 and fine The presence or absence of air bubbles, the type of the micro-bubble water generator 14, the feed amount [μm], and the feed speed [μm / min] are shown together.

由表2所示的結果可知,與未進行微細氣泡水中的浸漬的比較例1的磨石5比較,交替進行了磨削區域41中的磨削對象物3的磨削以及非磨削區域42中的微細氣泡水32中的浸漬的實施例1及實施例2的磨石5能大幅降低磨石磨損率[%],並且也能減小磨削對象物3的磨削面的表面粗糙度Ra[μm]。From the results shown in Table 2, it can be seen that the grinding of the grinding target 3 in the grinding area 41 and the non-grinding area 42 were performed alternately with the grinding stone 5 of Comparative Example 1 without immersion in fine bubble water. The grinding stone 5 of Examples 1 and 2 impregnated with the fine bubble water 32 in the water can greatly reduce the grinding stone wear rate [%], and can also reduce the surface roughness of the grinding surface of the grinding object 3. Ra [μm].

如以上所述對實施形態及實施例進行了說明,但最初也預計將所述實施形態及實施例的構成進行適當組合。The embodiments and examples have been described as above, but it is expected that the configurations of the embodiments and examples will be appropriately combined initially.

對本發明的實施形態進行了說明,但應想到,本次公開的實施形態在所有方面為例示而非限制性。本發明的範圍是由申請專利範圍所示,是指包含與申請專利範圍均等的含意及範圍內的所有變更。Although the embodiment of the present invention has been described, it should be understood that the embodiment disclosed this time is illustrative and non-restrictive in every respect. The scope of the present invention is shown by the scope of patent application, and it means all changes within the meaning and scope equivalent to the scope of patent application.

[產業上的可利用性] 此處公開的實施形態能用於磨削裝置及磨削品的製造方法,能特別有效地用於需要同時磨削不同材料的工藝的半導體封裝等磨削對象物的磨削。[Industrial Applicability] The embodiments disclosed herein can be used for a grinding device and a method for manufacturing a ground article, and can be particularly effectively used for grinding objects such as semiconductor packages that need to simultaneously process different materials. Grinding.

1‧‧‧底座1‧‧‧ base

2‧‧‧平台2‧‧‧ platform

3‧‧‧磨削對象物3‧‧‧ Grinding object

3a‧‧‧支持構件3a‧‧‧ supporting components

3b‧‧‧密封樹脂3b‧‧‧sealing resin

4‧‧‧磨削液供給部4‧‧‧Grinding fluid supply department

5‧‧‧磨石5‧‧‧ millstone

6‧‧‧輪固定件6‧‧‧ wheel fixings

6a‧‧‧底面6a‧‧‧underside

7‧‧‧主軸7‧‧‧ Spindle

8‧‧‧馬達8‧‧‧ Motor

9‧‧‧連結部9‧‧‧ Connection Department

10‧‧‧柱部10‧‧‧ pillar

11‧‧‧磨削部11‧‧‧Grinding Department

12‧‧‧微細氣泡水供給部12‧‧‧Fine Bubble Water Supply Department

12a‧‧‧微細氣泡水供給部安裝部12a‧‧‧Fine bubble water supply part mounting part

12b‧‧‧微細氣泡水收容部12b‧‧‧Fine bubble water container

12c‧‧‧微細氣泡水排出部12c‧‧‧Fine bubble water discharge part

12d‧‧‧端面壁部12d‧‧‧End wall

12e‧‧‧底部12e‧‧‧ bottom

12f‧‧‧壁部12f‧‧‧Wall

12g‧‧‧連結部12g‧‧‧Connection Department

13‧‧‧軟管13‧‧‧hose

14‧‧‧微細氣泡水生成器14‧‧‧Fine Bubble Water Generator

15‧‧‧環狀基台15‧‧‧ ring abutment

16‧‧‧磨削輪16‧‧‧Grinding wheel

21‧‧‧外蓋21‧‧‧ Cover

22、23‧‧‧區域22, 23‧‧‧ area

31‧‧‧微細氣泡水供給孔31‧‧‧Fine bubble water supply hole

32‧‧‧微細氣泡水32‧‧‧Fine Bubble Water

41‧‧‧磨削區域41‧‧‧Grinding area

42‧‧‧非磨削區域42‧‧‧Non-grinding area

43、44‧‧‧軸43, 44‧‧‧ axis

45‧‧‧第一方向45‧‧‧ first direction

46‧‧‧第二方向46‧‧‧ second direction

51‧‧‧箭頭51‧‧‧arrow

圖1為實施形態的磨削裝置的示意性側面圖。 圖2為圖1所示的輪固定件的底面的示意性平面圖。 圖3為圖1所示的磨削輪的示意性平面圖。 圖4為對將磨削輪安裝於輪固定件的方法的一例進行圖解的示意性側面圖。 圖5為圖1所示的微細氣泡水供給部的示意性平面圖。 圖6為圖5所示的微細氣泡水供給部的端面的示意性平面圖。 圖7為對實施形態的磨削品的製造方法進行圖解的示意性截面圖。 圖8為對實施形態的磨削品的製造方法進行圖解的示意性立體圖。 圖9為對實施形態的磨削品的製造方法進行圖解的示意性平面圖。 圖10為對實施形態中清洗磨石的方法的一例進行圖解的示意性放大截面圖。 圖11為對實施形態的微細氣泡水的噴出方向與磨削部的旋轉方向的關係的一例進行圖解的示意性平面圖。FIG. 1 is a schematic side view of a grinding apparatus according to the embodiment. FIG. 2 is a schematic plan view of a bottom surface of the wheel fixing member shown in FIG. 1. FIG. 3 is a schematic plan view of the grinding wheel shown in FIG. 1. FIG. 4 is a schematic side view illustrating an example of a method of mounting a grinding wheel on a wheel fixture. FIG. 5 is a schematic plan view of the fine bubble water supply section shown in FIG. 1. FIG. 6 is a schematic plan view of an end surface of the fine bubble water supply section shown in FIG. 5. FIG. 7 is a schematic cross-sectional view illustrating a method for manufacturing a ground product according to the embodiment. FIG. 8 is a schematic perspective view illustrating a method for manufacturing a ground product according to the embodiment. FIG. 9 is a schematic plan view illustrating a method for manufacturing a ground product according to the embodiment. FIG. 10 is a schematic enlarged cross-sectional view illustrating an example of a method for cleaning a grindstone in the embodiment. FIG. 11 is a schematic plan view illustrating an example of the relationship between the discharge direction of the fine bubble water and the rotation direction of the grinding unit in the embodiment.

Claims (8)

一種磨削裝置,具備以環狀配置有磨石且可旋轉的磨削部,並且所述磨削裝置的特徵在於:所述磨石是以在磨削對象物的磨削過程中對所述磨削對象物進行磨削的磨削區域與不對所述磨削對象物進行磨削的非磨削區域共存的方式配置,所述磨削裝置更包括:微細氣泡水生成器,以生成微細氣泡水的方式構成;以及微細氣泡水供給部,以能對所述非磨削區域的所述磨石供給所述微細氣泡水的方式構成,所述微細氣泡水供給部是以收容從所述微細氣泡水生成器供給的所述微細氣泡水,且浸漬所述非磨削區域的所述磨石的方式構成。 A grinding device includes a grinding unit in which a grindstone is arranged in a ring shape and is rotatable, and the grinding device is characterized in that the grindstone is configured to grind the object during grinding. The grinding area where the grinding object is ground and the non-grinding area where the grinding object is not ground are co-existed. The grinding device further includes a micro-bubble water generator to generate micro-bubbles. And a micro-bubble water supply unit configured to supply the micro-bubble water to the grinding stone in the non-grinding area, the micro-bubble water supply unit is configured to receive the micro-bubble water The fine bubble water supplied from the bubble water generator is configured to soak the millstone in the non-grinding area. 如申請專利範圍第1項所述的磨削裝置,其中所述磨削裝置更包括:底座;以及平台,設置在所述底座上,在磨削時設置所述磨削對象物,所述微細氣泡水供給部具備以能排出所述微細氣泡水的方式構成的微細氣泡水排出部,所述微細氣泡水排出部位於與所述磨削對象物的設置部位對應的區域以外的區域的所述底座的上方。 The grinding device according to item 1 of the patent application scope, wherein the grinding device further comprises: a base; and a platform provided on the base, and the grinding object is set during grinding, and the fine The bubble water supply unit includes a fine bubble water discharge unit configured to discharge the fine bubble water, and the fine bubble water discharge unit is located in a region other than a region corresponding to the installation position of the grinding object. Above the base. 如申請專利範圍第1項所述的磨削裝置,更包括:磨削液供給部,以對所述磨削對象物的磨削面供給磨削液的 方式構成。 The grinding device according to item 1 of the scope of patent application, further comprising: a grinding fluid supply unit configured to supply the grinding fluid to the grinding surface of the object to be ground. Way composition. 如申請專利範圍第1至3項中任一項所述的磨削裝置,其中所述磨削對象物具備支持構件及所述支持構件上的密封樹脂,所述磨削裝置是以至少磨削所述密封樹脂的一部分以減小所述磨削對象物的厚度的方式構成。 The grinding device according to any one of claims 1 to 3, wherein the object to be ground includes a support member and a sealing resin on the support member, and the grinding device is configured to grind at least A part of the sealing resin is configured to reduce the thickness of the object to be ground. 一種磨削品的製造方法,包括使以環狀配置有磨石的磨削部旋轉而利用所述磨石對磨削對象物進行磨削的步驟,並且所述磨削品的製造方法的特徵在於:所述磨石是以在所述磨削對象物的磨削過程中對所述磨削對象物進行磨削的磨削區域與不對所述磨削對象物進行磨削的非磨削區域共存的方式配置,且所述磨削品的製造方法包括以下步驟:利用微細氣泡水生成器而生成微細氣泡水,並供給至微細氣泡水供給部;以及對所述非磨削區域的所述磨石供給所述微細氣泡水,其中供給所述微細氣泡水的步驟包括使所述非磨削區域的所述磨石浸漬在所述微細氣泡水中的步驟。 A method for manufacturing an abrasive article, comprising the steps of rotating a grinding unit in which a grinding stone is arranged in a ring shape to grind an object to be ground with the grinding stone, and a method for producing the abrasive article The grinding stone is a grinding area where the grinding object is ground during the grinding process of the grinding object and a non-grinding area where the grinding object is not ground. It is arranged in a coexisting manner, and the method for manufacturing the abrasive article includes the steps of: generating micro-bubble water using a micro-bubble water generator, and supplying the micro-bubble water supply unit; and A grindstone supplies the fine bubble water, wherein the step of supplying the fine bubble water includes a step of immersing the grindstone in the non-grinding area in the fine bubble water. 如申請專利範圍第5項所述的磨削品的製造方法,更包括:從與所述磨削對象物的設置部位對應的區域以外的區域的上方排出所述微細氣泡水的步驟。 The manufacturing method of the abrasive article according to item 5 of the patent application scope further includes a step of discharging the fine bubble water from above a region other than a region corresponding to the installation location of the object to be ground. 如申請專利範圍第5項所述的磨削品的製造方法,更包括: 對所述磨削對象物的磨削面供給磨削液的步驟。 The manufacturing method of the abrasive article according to item 5 of the patent application scope further includes: A step of supplying a grinding liquid to a grinding surface of the grinding object. 如申請專利範圍第5至7項中任一項所述的磨削品的製造方法,其中所述磨削對象物具備支持構件及所述支持構件上的密封樹脂,所述磨削品的製造方法包括:對所述磨削對象物進行磨削的步驟包括至少磨削所述密封樹脂的一部分以減小所述磨削對象物的厚度的步驟。The method for manufacturing a ground article according to any one of claims 5 to 7, wherein the object to be ground includes a supporting member and a sealing resin on the supporting member, and the manufacturing of the ground article The method includes the step of grinding the object to be ground, including the step of grinding at least a part of the sealing resin to reduce the thickness of the object to be ground.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001328069A (en) * 2000-05-24 2001-11-27 Ebara Corp Method and device for cleaning of dresser in grinding device
JP2017501899A (en) * 2014-01-15 2017-01-19 エルジー シルトロン インコーポレイテッド Wafer grinding equipment
TW201713460A (en) * 2015-07-30 2017-04-16 Disco Corp Grinding device to maintain the grinding force of a grinding wheel when grinding a wafer by using a grinding device injecting cleaning water propagating ultrasonic wave to clean the grinding wheel

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW353203B (en) * 1995-04-10 1999-02-21 Matsushita Electric Ind Co Ltd Apparatus for holding substrate to be polished
JP4899211B2 (en) * 2006-04-14 2012-03-21 暉夫 八尋 Water-foam jet construction method, construction system, and drilling system
JP5522929B2 (en) * 2008-12-03 2014-06-18 国立大学法人九州大学 Polishing pad and polishing method
JP2010194995A (en) * 2009-02-27 2010-09-09 Toppan Printing Co Ltd Plate cleaning method and cleaning device
JP4563496B1 (en) * 2009-10-22 2010-10-13 株式会社H&S Microbubble generator
WO2011052111A1 (en) * 2009-10-27 2011-05-05 シャープ株式会社 Substrate cleaning device and substrate cleaning method
JP2013059854A (en) * 2011-08-22 2013-04-04 Shibaura Mechatronics Corp Dressing device, dressing method, and polishing device
JP2014165339A (en) 2013-02-25 2014-09-08 Disco Abrasive Syst Ltd Method of processing laminated wafer
JP6200765B2 (en) * 2013-10-24 2017-09-20 株式会社ディスコ Processing method of package substrate
JP6165020B2 (en) * 2013-10-29 2017-07-19 株式会社ディスコ Processing method
JP6366308B2 (en) * 2014-03-12 2018-08-01 株式会社ディスコ Processing method
JP6501191B2 (en) * 2014-12-02 2019-04-17 シグマテクノロジー有限会社 Micro-nano bubble cleaning method and apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001328069A (en) * 2000-05-24 2001-11-27 Ebara Corp Method and device for cleaning of dresser in grinding device
JP2017501899A (en) * 2014-01-15 2017-01-19 エルジー シルトロン インコーポレイテッド Wafer grinding equipment
TW201713460A (en) * 2015-07-30 2017-04-16 Disco Corp Grinding device to maintain the grinding force of a grinding wheel when grinding a wafer by using a grinding device injecting cleaning water propagating ultrasonic wave to clean the grinding wheel

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