JP2001328069A - Method and device for cleaning of dresser in grinding device - Google Patents
Method and device for cleaning of dresser in grinding deviceInfo
- Publication number
- JP2001328069A JP2001328069A JP2000153399A JP2000153399A JP2001328069A JP 2001328069 A JP2001328069 A JP 2001328069A JP 2000153399 A JP2000153399 A JP 2000153399A JP 2000153399 A JP2000153399 A JP 2000153399A JP 2001328069 A JP2001328069 A JP 2001328069A
- Authority
- JP
- Japan
- Prior art keywords
- dresser
- liquid
- dressing
- polishing
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエハ等の
基板を研磨する研磨装置の研磨面のドレッシング（目立
て）を行うドレッサーのドレッシング面を洗浄する研磨
装置のドレッサー洗浄方法及び装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dresser cleaning method and a polishing apparatus for cleaning a dressing surface of a dresser for dressing a dressing surface of a polishing device for polishing a substrate such as a semiconductor wafer. .
【０００２】[0002]
【従来の技術】半導体ウエハ等の基板を研磨する研磨装
置は、通常スラリーと研磨布（若しくは砥石）を用い、
該研磨布（若しくは砥石）に基板を押付け、研磨布（若
しくは砥石）と基板の相対運動により基板の研磨を行っ
ている。この研磨工程において、研磨布（若しくは砥
石）はスラリーや研磨かすにより溝若しくは微細孔が詰
まったり（目詰まり）、溝の表面形状自体の変化（目潰
れ）、研磨面の形状変化（面ダレ）が生じる。2. Description of the Related Art A polishing apparatus for polishing a substrate such as a semiconductor wafer usually uses a slurry and a polishing cloth (or whetstone).
The substrate is pressed against the polishing cloth (or grindstone), and the substrate is polished by the relative movement between the polishing cloth (or grindstone) and the substrate. In this polishing process, the polishing cloth (or whetstone) becomes clogged with grooves or fine holes (clogging) due to slurry or polishing debris, changes in the surface shape itself of the grooves (closed up), changes in the shape of the polished surface (surface sagging). Occurs.
【０００３】これにより、研磨装置は研磨時間によって
研磨特性が変化してしまうため、この目詰まり、目潰
れ、面ダレを除去するために、ドレッサー（ダイヤモン
ド砥石、セラミック砥石、ブラシ等を使用することが多
い）を用いて研磨面をドレッシングしている。このドレ
ッシングでは、ドレッサーが研磨面を削るため削りかす
が発生する。また、ドレッサーの研磨面に当接するドレ
ッシング面自体も目詰まりを起こしてしまう。そのた
め、好適なドレッシングを行うためにはドレッサーのド
レッシング面に付着した削りかすによる目詰まりを完全
に除去しなければならない。As a result, the polishing characteristics of the polishing apparatus change depending on the polishing time. In order to remove the clogging, crushing, and sagging, it is necessary to use a dresser (a diamond grindstone, a ceramic grindstone, a brush, or the like). ) Is dressed on the polished surface. In this dressing, shavings are generated due to the dresser shaving the polished surface. In addition, the dressing surface itself in contact with the polishing surface of the dresser also causes clogging. Therefore, in order to perform a suitable dressing, it is necessary to completely remove clogging caused by shavings attached to the dressing surface of the dresser.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上述の点に鑑
みてなされたもので、ドレッサーのドレッシング面に付
着した研磨面の削りかすや該削りかすによる目詰の除去
能力を向上させ、効率よく目詰まりを除去できる研磨装
置のドレッサー洗浄方法及び装置を提供することを目的
とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and has an object to improve the ability to remove shavings on a polished surface adhered to a dressing surface of a dresser and clogging due to the shavings, thereby improving efficiency. It is an object of the present invention to provide a dresser cleaning method and apparatus for a polishing apparatus that can remove clogging well.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
請求項１に記載の発明は、研磨装置の研磨面をドレッシ
ングするドレッサーの該研磨面に当接するドレッシング
面を洗浄する研磨装置のドレッサー洗浄方法であって、
ドレッサーのドレッシング面を液中に浸漬し、もしくは
ドレッシング面を液に接触させ、この状態で該ドレッシ
ング面にキャビテーションを伴う液流を噴射し、又は該
液を超音波振動により加振し、又は該液中に微細な気泡
を発生させドレッシング面に当接させ、又はこれら２以
上を組み合わせて、該ドレッシング面を洗浄することを
特徴とする。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a first aspect of the present invention is a dresser for dressing a polishing surface of a polishing apparatus. The method
The dressing surface of the dresser is immersed in the liquid, or the dressing surface is brought into contact with the liquid, and in this state, a liquid flow with cavitation is sprayed on the dressing surface, or the liquid is vibrated by ultrasonic vibration, or The method is characterized in that fine dressing is generated in the liquid and brought into contact with the dressing surface, or the dressing surface is washed by combining two or more of them.
【０００６】上記のようにドレッサーのドレッシング面
にキャビテーションを伴う液流を噴射することにより、
該キャビテーションが破壊するときに発生する衝撃波エ
ネルギーにより、ドレッシング面に付着した削りかすや
該削りかすによる目詰まりを効率よく除去できる。ま
た、液を超音波振動で加振することにより、超音波振動
による液振動がドレッサーのドレッシング面に伝わり、
その振動エネルギーでドレッシング面に付着した削りか
すや該削りかすによる目詰まりを効率よく除去できる。
また、微細な気泡をドレッシング面に当接させることに
より、この気泡が破れるときのエネルギーによりドレッ
シング面に付着した削りかすや該削りかすによる目詰ま
りを効率よく除去できる。また、これらを２以上組合せ
ることにより、その相乗効果により、より効率的にドレ
ッシング面に付着した削りかすや該削りかすによる目詰
まりを除去できる。[0006] By injecting a liquid flow with cavitation onto the dressing surface of the dresser as described above,
By the shock wave energy generated when the cavitation is broken, it is possible to efficiently remove shavings attached to the dressing surface and clogging due to the shavings. Also, by vibrating the liquid with ultrasonic vibration, liquid vibration due to ultrasonic vibration is transmitted to the dressing surface of the dresser,
With the vibration energy, the shavings adhered to the dressing surface and the clogging due to the shavings can be efficiently removed.
In addition, by bringing the fine bubbles into contact with the dressing surface, it is possible to efficiently remove shavings attached to the dressing surface and clogging due to the shavings due to energy at the time when the air bubbles are broken. Also, by combining two or more of them, the synergistic effect can more effectively remove the shavings adhered to the dressing surface and clogging due to the shavings.
【０００７】また、請求項２に記載の発明によれば、研
磨装置の研磨面をドレッシングするドレッサーの該研磨
面に当接するドレッシング面を洗浄する研磨装置のドレ
ッサー洗浄装置であって、液を収容する液槽を設けると
共に、該液槽の液にドレッサーを接触した状態でそのド
レッシング面にキャビテーションを伴う液流を噴射する
液流噴射手段、又は液槽の液に超音波の振動を加える超
音波振動手段、又は液槽の液中に気泡を拡散させドレッ
シング面に当接させる気泡発生手段のいずれか１又は２
以上を設けたことを特徴とする。According to a second aspect of the present invention, there is provided a dresser cleaning device for a polishing apparatus for cleaning a dressing surface of the dresser which is in contact with the polishing surface of the dresser for dressing the polishing surface of the polishing apparatus. Liquid jetting means for injecting a liquid flow with cavitation to the dressing surface while a dresser is in contact with the liquid in the liquid tank, or an ultrasonic wave applying ultrasonic vibration to the liquid in the liquid tank Either one of vibrating means or bubble generating means for diffusing air bubbles in the liquid in the liquid tank and bringing the air bubbles into contact with the dressing surface
The above is provided.
【０００８】上記構成の洗浄装置によれば、上記のよう
に液流噴射手段、又は超音波振動手段、気泡発生手段の
いずれか１又は２以上を設けたので、上記洗浄方法と同
じ作用により、ドレッシング面の削りかすや目詰まりを
効率的に除去することができる。According to the cleaning apparatus having the above-described structure, one or more of the liquid jetting means, the ultrasonic vibration means, and the bubble generating means are provided as described above. The shavings and clogging of the dressing surface can be efficiently removed.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態例を図
面に基づいて説明する。図１は本発明に係るドレッサー
洗浄装置を具備する研磨装置の概略構成を示す図であ
る。本研磨装置はターンテーブル１を具備し、該ターン
テーブル１の上面には研磨面を構成する研磨布２が貼り
付けられている。３は半導体ウエハ等の被研磨基板Ｗを
保持するトップリングで、該トップリング３はトップリ
ングヘッド４に回転自在で且つ上下動自在に取付けられ
ている。また、トップリングヘッド４は旋回軸５を介し
て旋回できるようになっており、この旋回によりトップ
リング３をターンテーブル１の上部の研磨位置とターン
テーブル１の外側の待機位置（退避位置）に移動できる
ようになっている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a schematic configuration of a polishing apparatus provided with a dresser cleaning device according to the present invention. The polishing apparatus has a turntable 1, and a polishing cloth 2 constituting a polishing surface is attached to an upper surface of the turntable 1. Reference numeral 3 denotes a top ring for holding a substrate W to be polished such as a semiconductor wafer. The top ring 3 is attached to a top ring head 4 so as to be rotatable and vertically movable. In addition, the top ring head 4 can be turned through a turning shaft 5, and the turning causes the top ring 3 to be moved to a polishing position above the turntable 1 and a standby position (retreat position) outside the turntable 1. It can be moved.
【００１０】６は研磨布２の研磨面をドレッシングする
ドレッサーであり、該ドレッサー６はドレッサーヘッド
７に回転及び上下動自在に取付けられている。ドレッサ
ーヘッド７は、旋回軸８を介して旋回できるようになっ
ており、この旋回によりドレッサー６をターンテーブル
１の上部のドレッシング位置とターンテーブル１の外側
の待機位置（退避位置）に移動できるようになってい
る。Reference numeral 6 denotes a dresser for dressing the polishing surface of the polishing pad 2. The dresser 6 is attached to a dresser head 7 so as to rotate and move up and down. The dresser head 7 can be turned via a turning shaft 8, and the turning allows the dresser 6 to move to a dressing position above the turntable 1 and a standby position (retreat position) outside the turntable 1. It has become.
【００１１】上記ドレッサー６の待機位置には、洗浄液
１０（主に純水）を収容する液槽９が配置されており、
ドレッサー６は待機中はそのドレッシング面（ドレッシ
ング中に研磨布２の研磨面に当接する面）を該液槽９の
洗浄液１０中に浸漬している。液槽９の底部にはドレッ
サー６のドレッシング面に向かってキャビテーションを
伴う洗浄液流（主に純水）を噴出する複数の噴出ノズル
１１が配置されている。At a standby position of the dresser 6, a liquid tank 9 containing a cleaning liquid 10 (mainly pure water) is disposed.
The dressing surface of the dresser 6 (the surface that comes into contact with the polishing surface of the polishing pad 2 during dressing) is immersed in the cleaning liquid 10 in the liquid tank 9 during standby. A plurality of ejection nozzles 11 for ejecting a cleaning liquid flow (mainly pure water) accompanied by cavitation toward the dressing surface of the dresser 6 are arranged at the bottom of the liquid tank 9.
【００１２】上記構成の研磨装置において、被研磨基板
Ｗをトップリング３で保持し、該被研磨基板Ｗを研磨布
２の研磨面上に所定の圧力で押圧し、図示しない砥液供
給ノズルから該研磨面上に砥液を供給し、ターンテーブ
ル１とトップリング３を回転させることにより、被研磨
基板Ｗと研磨布２の相対運動により、被研磨基板Ｗの表
面を平坦、且つ鏡面に研磨する。この研磨工程におい
て、研磨布２は砥液中のスラリーや研磨かすによりその
溝若しくは微細孔が詰まったり（目詰まり）、溝の表面
形状自体の変化（目潰れ）、研磨面の形状変化（面ダ
レ）が生じる。このため次に、ドレッサーを用いて研磨
面をドレッシングするドレッシング工程を行う。ただ、
ドレッサーのドレッシング面自体も目詰まりを起こして
しまう場合がある。In the polishing apparatus having the above configuration, the substrate W to be polished is held by the top ring 3, and the substrate W to be polished is pressed against the polishing surface of the polishing cloth 2 with a predetermined pressure, and is then fed from a polishing liquid supply nozzle (not shown). A polishing liquid is supplied onto the polishing surface, and the turntable 1 and the top ring 3 are rotated to polish the surface of the substrate W to be polished to a flat and mirror surface by the relative movement between the substrate W and the polishing cloth 2. I do. In this polishing step, the grooves or the fine holes of the polishing pad 2 are clogged (clogged) by the slurry or the polishing residue in the polishing liquid, the surface shape itself of the grooves is changed (closed), and the shape of the polished surface is changed. (Drip) occurs. Therefore, next, a dressing step of dressing the polished surface using a dresser is performed. However,
The dressing surface of the dresser itself may also cause clogging.
【００１３】そこでドレッサー６のドレッシング面に付
着した削れかすや目詰まりを除去し、ドレッシング能力
の回復を図る必要がある。ここでは、ドレッサー６がタ
ーンテーブル１の外側に配置された液槽９の洗浄液１０
の中に浸漬され、待機している間に噴出ノズル１１から
ドレッサー６のドレッシング面に向かってキャビテーシ
ョンの伴う洗浄液流を噴出し、該キャビテーションが破
壊するときの衝撃波エネルギーにより、ドレッシング面
の削りかすや該削りかすによる目詰まりを効率よく除去
している。Therefore, it is necessary to remove shavings and clogging adhered to the dressing surface of the dresser 6 to recover the dressing ability. Here, the dresser 6 is used for cleaning liquid 10 in a liquid tank 9 disposed outside the turntable 1.
The washing liquid flow accompanied by cavitation is ejected from the ejection nozzle 11 toward the dressing surface of the dresser 6 while waiting, and the shock wave energy generated when the cavitation is broken causes shavings of the dressing surface. Clogging due to the shavings is efficiently removed.
【００１４】図２は上記噴出ノズル１１の構成例を示す
図である。図示するように、噴出ノズル１１はノズル本
体１１−１を具備し、該ノズル本体１１−１には内孔１
１−２に連続して絞り部１１−３が形成され、絞り部１
１−３の下流側には急拡大部１１−４が形成された構成
である。該噴出ノズル１１は液槽９の底部に突出して配
置されている。FIG. 2 is a view showing a configuration example of the jet nozzle 11. As shown in the drawing, the ejection nozzle 11 has a nozzle body 11-1.
A throttle section 11-3 is formed continuously from 1-2, and the throttle section 1 is formed.
The configuration is such that a sudden enlargement portion 11-4 is formed downstream of 1-3. The jet nozzle 11 is arranged to protrude from the bottom of the liquid tank 9.
【００１５】上記構成の噴出ノズル１１において、該内
孔１１−２に高圧の洗浄液を供給すると、該洗浄液は絞
り部１１−３を通って高速洗浄液噴流Ｊとなって、ドレ
ッサー６のドレッシング面６ａに向かって噴射される。
噴出ノズル１１の外部の洗浄液１０が高速洗浄液噴流Ｊ
の流れに誘起され、洗浄液１０の一部が急拡大部１１−
４に逆流し、循環流Ｓが発生し、この循環流Ｓと高速洗
浄液噴流Ｊの間に極めて複雑で顕著な速度剪断層が生じ
る。When the high-pressure cleaning liquid is supplied to the inner hole 11-2 in the jetting nozzle 11 having the above-described structure, the cleaning liquid passes through the throttle portion 11-3 to form a high-speed cleaning liquid jet J, and the dressing surface 6a of the dresser 6 is formed. Injected toward.
The cleaning liquid 10 outside the jet nozzle 11 is a high-speed cleaning liquid jet J.
And a part of the cleaning solution 10 is suddenly expanded
4, a circulating flow S is generated, and an extremely complicated and remarkable velocity shear layer is generated between the circulating flow S and the high-speed cleaning liquid jet J.
【００１６】そして、この剪断層内に多数の微細な渦が
発生し、それらの渦の中心に非常に多くのキャビテーシ
ョン核が生成し、高速洗浄液噴流Ｊと共に下流側に流出
して充分に発達したキャビテーション噴流ＣＪとなり、
ドレッサー６のドレッシング面６ａに当接する。そして
キャビテーションの破壊するときの衝撃波エネルギーに
より、ドレッシング面６ａに付着した削りかすや目詰ま
りが除去される。この時、ドレッサー６を低速で回転さ
せることより、ドレッシング面６ａが均一に洗浄され
る。A large number of fine vortices are generated in the shear layer, and an extremely large number of cavitation nuclei are generated at the center of the vortices, and flow out downstream with the high-speed cleaning liquid jet J to develop sufficiently. Cavitation jet CJ
It comes into contact with the dressing surface 6a of the dresser 6. The shavings and clogging attached to the dressing surface 6a are removed by the shock wave energy at the time of the cavitation breaking. At this time, the dressing surface 6a is uniformly cleaned by rotating the dresser 6 at a low speed.
【００１７】なお、上記キャビテーションを伴う液流を
噴出するノズルは、図２に示す構成のものに限定される
ものではなく、キャビテーションを伴う液流を発生する
ものであればよい。The nozzle for ejecting the liquid flow with cavitation is not limited to the one shown in FIG. 2, but may be any nozzle that generates liquid flow with cavitation.
【００１８】図３は液槽の底部に超音波振動装置を配置
した例を示す図である。図示するように、液槽９の底部
に超音波振動装置１２を設け、該液槽９の洗浄液１０の
中にドレッサー６のドレッシング面６ａを浸漬し、この
状態で洗浄液１０に超音波の振動を加える。これによ
り、この超音波振動による洗浄液振動１３がドレッシン
グ面６ａに伝播し、その振動エネルギーによりドレッシ
ング面６ａに付着した削りかすや該削りかすによる目詰
まりが効率よく除去される。この際ドレッサー６を低速
で回転させることにより、ドレッシング面６ａが均一に
洗浄される。FIG. 3 is a view showing an example in which an ultrasonic vibration device is arranged at the bottom of the liquid tank. As shown in the figure, an ultrasonic vibration device 12 is provided at the bottom of the liquid tank 9, the dressing surface 6 a of the dresser 6 is immersed in the cleaning liquid 10 of the liquid tank 9, and the ultrasonic vibration is applied to the cleaning liquid 10 in this state. Add. As a result, the cleaning liquid vibration 13 due to the ultrasonic vibration propagates to the dressing surface 6a, and the shavings adhered to the dressing surface 6a and clogging due to the shavings are efficiently removed by the vibration energy. At this time, the dressing surface 6a is uniformly cleaned by rotating the dresser 6 at a low speed.
【００１９】図４は液槽の底部に気泡発生装置を配置し
た例を示す図である。図示するように、液槽９の底部に
空気（Ａｉｒ）や窒素（Ｎ2）ガス等の気泡を発生する
気泡発生装置１４を配置し、該気泡発生装置１４に空気
や窒素ガスを供給することにより、該気泡発生装置１４
から発生した空気や窒素ガスの多数の微細な気泡１５が
洗浄液１０の中に拡散する。そして気泡１５が上昇しド
レッサー６のドレッシング面６ａに当接して破れるとき
のエネルギーによりドレッシング面６ａに付着した削り
かすや該削りかすによる目詰まりが効率よく除去され
る。この際ドレッサー６を回転させることにより、ドレ
ッシング面６ａが均一に洗浄される。FIG. 4 is a view showing an example in which a bubble generator is arranged at the bottom of the liquid tank. As shown in the figure, a bubble generator 14 that generates bubbles such as air (Air) and nitrogen (N 2 ) gas is disposed at the bottom of the liquid tank 9, and air and nitrogen gas are supplied to the bubble generator 14. The bubble generator 14
Many fine bubbles 15 of air or nitrogen gas generated from the gas diffuse into the cleaning liquid 10. The energy generated when the bubble 15 rises and comes into contact with the dressing surface 6a of the dresser 6 to break it can efficiently remove the shavings attached to the dressing surface 6a and the clogging due to the shavings. At this time, by rotating the dresser 6, the dressing surface 6a is uniformly cleaned.
【００２０】上記例では、液槽９内にキャビテーション
を伴う液流を噴出する噴出ノズル１１、超音波振動波を
発生する超音波振動装置１２、気泡を発生する気泡発生
装置１４をそれぞれ単独に設けた例を示したが、これら
を２つ以上組み合わせその相乗効果により、ドレッシン
グ面６ａの削りかすや目詰まりを除去する能力を向上さ
せるように構成してもよい。In the above example, a jet nozzle 11 for jetting a liquid flow with cavitation into the liquid tank 9, an ultrasonic vibration device 12 for generating ultrasonic vibration waves, and a bubble generating device 14 for generating bubbles are provided independently. Although the above example has been described, a combination of two or more of these may be configured to improve the ability to remove shavings and clogging of the dressing surface 6a by a synergistic effect.
【００２１】なお、上記実施例では研磨装置として、タ
ーンテーブル１の上面に研磨布２を貼り付けた例を示し
たが、ターンテーブル１の上面に砥石を貼り付けた構成
でもよい。また、研磨面と研磨対象物である基板の相対
運動により基板を研磨する構成の研磨装置であれば、本
発明のドレッサー洗浄方法及び装置は適用できる。In the above-described embodiment, the polishing apparatus has been described as an example in which the polishing cloth 2 is attached to the upper surface of the turntable 1, but a configuration in which a grindstone is attached to the upper surface of the turntable 1 may be used. The dresser cleaning method and apparatus of the present invention can be applied to any polishing apparatus configured to polish a substrate by a relative movement between a polishing surface and a substrate to be polished.
【００２２】[0022]
【発明の効果】以上説明したように、各請求項に記載の
発明によれば下記のような優れた効果が得られる。As described above, according to the present invention, the following excellent effects can be obtained.
【００２３】請求項１に記載の発明によれば、ドレッサ
ーのドレッシング面を液に接触させ、この状態で該ドレ
ッシング面にキャビテーションを伴う液体流を噴射、又
該液を超音波振動により加振し、又は該液中に微細な気
泡を発生させドレッシング面に当接させ、又はこれら２
以上を組み合わせて、該ドレッシング面を洗浄するか
ら、キャビテーションが破壊するときに発生する衝撃
波、超音波による液振動エネルギー、微細な気泡がはじ
ける衝撃でドレッシング面に付着した削りかすや削りか
すによる目詰まりを効率よく除去できる。According to the first aspect of the present invention, the dressing surface of the dresser is brought into contact with a liquid, and in this state, a liquid flow accompanied by cavitation is jetted onto the dressing surface, and the liquid is vibrated by ultrasonic vibration. Or generate fine air bubbles in the liquid and make it contact the dressing surface.
In combination with the above, the dressing surface is cleaned, so that the shock wave generated when cavitation is broken, the liquid vibration energy by ultrasonic waves, and the clogging due to the shavings and swarf adhering to the dressing surface due to the impact of fine bubbles popping out. Can be efficiently removed.
【００２４】また、請求項２に記載の発明によれば、液
槽の液にドレッサーを接触した状態でそのドレンシング
面にキャビテーションを伴う液流を噴射する液流噴射手
段、又は液槽の液に超音波の振動を加える超音波振動手
段、又は液槽の液中に気泡を拡散させドレッシング面に
当接させる気泡発生手段のいずれか１又は２以上を設け
たので、請求項１に記載の発明と同様な作用により、ド
レッシング面の削りかすや該削りかすによる目詰まりを
効率的に除去できる。According to the second aspect of the present invention, in a state where the dresser is in contact with the liquid in the liquid tank, the liquid jetting means for injecting the liquid flow with cavitation to the draining surface thereof or the liquid in the liquid tank. 2. The invention according to claim 1, wherein one or two or more of an ultrasonic vibrating means for applying ultrasonic vibration and a bubble generating means for diffusing bubbles in the liquid in the liquid tank and abutting against the dressing surface are provided. By the same operation as described above, shavings on the dressing surface and clogging due to the shavings can be efficiently removed.
【図１】本発明に係るドレッサー洗浄装置を具備する研
磨装置の概略構成を示す図である。FIG. 1 is a diagram showing a schematic configuration of a polishing apparatus provided with a dresser cleaning device according to the present invention.
【図２】本発明に係る研磨装置のドレッサー洗浄装置の
構成例を示す図である。FIG. 2 is a diagram showing a configuration example of a dresser cleaning device of the polishing device according to the present invention.
【図３】本発明に係る研磨装置のドレッサー洗浄装置の
構成例を示す図である。FIG. 3 is a diagram showing a configuration example of a dresser cleaning device of the polishing device according to the present invention.
【図４】本発明に係る研磨装置のドレッサー洗浄装置の
構成例を示す図である。FIG. 4 is a diagram showing a configuration example of a dresser cleaning device of the polishing device according to the present invention.
１ ターンテーブル ２ 研磨布 ３ トップリング ４ トップリングヘッド ５ 旋回軸 ６ ドレッサー ７ ドレッサーヘッド ８ 旋回軸 ９ 液槽 １０ 洗浄液 １１ 噴出ノズル １２ 超音波振動装置 １３ 洗浄液振動 １４ 気泡発生装置 １５ 気泡 DESCRIPTION OF SYMBOLS 1 Turntable 2 Polishing cloth 3 Top ring 4 Top ring head 5 Revolving axis 6 Dresser 7 Dresser head 8 Revolving axis 9 Liquid tank 10 Cleaning liquid 11 Spray nozzle 12 Ultrasonic vibrator 13 Cleaning liquid vibration 14 Air bubble generator 15 Bubbles
Claims (2)
レッサーの該研磨面に当接するドレッシング面を洗浄す
る研磨装置のドレッサー洗浄方法であって、 前記ドレッサーのドレッシング面を液に接触させ、この
状態で該ドレッシング面にキャビテーションを伴う液流
を噴射し、又は該液を超音波振動により加振し、又は該
液中に微細な気泡を発生させドレッシング面に当接さ
せ、又はこれら２以上を組み合わせて、該ドレッシング
面を洗浄することを特徴とする研磨装置のドレッサー洗
浄方法。1. A dresser cleaning method for a dressing device for cleaning a dressing surface of a dresser for dressing a polishing surface of the polishing device, the dressing surface being in contact with the polishing surface, wherein the dressing surface of the dresser is brought into contact with a liquid. Inject a liquid flow with cavitation on the dressing surface, or vibrate the liquid by ultrasonic vibration, or generate fine bubbles in the liquid to contact the dressing surface, or a combination of two or more A dresser cleaning method for a polishing apparatus, comprising: cleaning the dressing surface.
レッサーの該研磨面に当接するドレッシング面を洗浄す
る研磨装置のドレッサー洗浄装置であって、 液を収容する液槽を設けると共に、該液槽の液に前記ド
レッサーを接触した状態でそのドレッシング面にキャビ
テーションを伴う液流を噴射する液流噴射手段、又は液
槽の液に超音波の振動を加える超音波振動手段、又は液
槽の液中に気泡を拡散させ前記ドレッシング面に当接さ
せる気泡発生手段のいずれか１又は２以上を設けたこと
を特徴とする研磨装置のドレッサー洗浄装置。2. A dresser cleaning device for a dressing device for cleaning a dressing surface of a dresser for dressing a polishing surface of the polishing device, the dressing surface being in contact with the polishing surface. Liquid jetting means for injecting a liquid flow with cavitation to the dressing surface while the dresser is in contact with the liquid, or ultrasonic vibration means for applying ultrasonic vibration to the liquid in the liquid tank, or in the liquid in the liquid tank A dresser cleaning apparatus for a polishing apparatus, further comprising one or more of bubble generating means for diffusing bubbles and making contact with the dressing surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000153399A JP2001328069A (en) | 2000-05-24 | 2000-05-24 | Method and device for cleaning of dresser in grinding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000153399A JP2001328069A (en) | 2000-05-24 | 2000-05-24 | Method and device for cleaning of dresser in grinding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001328069A true JP2001328069A (en) | 2001-11-27 |
Family
ID=18658659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000153399A Pending JP2001328069A (en) | 2000-05-24 | 2000-05-24 | Method and device for cleaning of dresser in grinding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001328069A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006022452A2 (en) * | 2004-08-27 | 2006-03-02 | Ebara Corporation | Polishing apparatus and polishing method |
| KR100847836B1 (en) | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | Apparatus and Method for Chemical Mechanical Polishing |
| JP2008543047A (en) * | 2005-05-26 | 2008-11-27 | アプライド マテリアルズ インコーポレイテッド | Smart conditioner rinse station |
| US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
| US8545634B2 (en) | 2005-10-19 | 2013-10-01 | Freescale Semiconductor, Inc. | System and method for cleaning a conditioning device |
| CN106141905A (en) * | 2016-08-22 | 2016-11-23 | 上海华力微电子有限公司 | A kind of grinding wafer head cleans device and cleaning method |
| CN106392886A (en) * | 2015-07-30 | 2017-02-15 | 株式会社迪思科 | Grinding device |
| CN108115553A (en) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polisher and cmp method |
| CN109202724A (en) * | 2018-09-12 | 2019-01-15 | 上海华力集成电路制造有限公司 | Chemical mechanical polishing device and its operating method |
| TWI674173B (en) * | 2017-06-09 | 2019-10-11 | 日商Ｔｏｗａ股份有限公司 | Grinding device and method for manufacturing the grinding product |
-
2000
- 2000-05-24 JP JP2000153399A patent/JP2001328069A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI397103B (en) * | 2003-12-23 | 2013-05-21 | Lam Res Corp | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
| US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
| WO2006022452A3 (en) * | 2004-08-27 | 2006-06-08 | Ebara Corp | Polishing apparatus and polishing method |
| WO2006022452A2 (en) * | 2004-08-27 | 2006-03-02 | Ebara Corporation | Polishing apparatus and polishing method |
| JP2008543047A (en) * | 2005-05-26 | 2008-11-27 | アプライド マテリアルズ インコーポレイテッド | Smart conditioner rinse station |
| US8545634B2 (en) | 2005-10-19 | 2013-10-01 | Freescale Semiconductor, Inc. | System and method for cleaning a conditioning device |
| KR100847836B1 (en) | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | Apparatus and Method for Chemical Mechanical Polishing |
| CN106392886A (en) * | 2015-07-30 | 2017-02-15 | 株式会社迪思科 | Grinding device |
| CN106141905A (en) * | 2016-08-22 | 2016-11-23 | 上海华力微电子有限公司 | A kind of grinding wafer head cleans device and cleaning method |
| CN106141905B (en) * | 2016-08-22 | 2018-06-29 | 上海华力微电子有限公司 | A kind of grinding wafer head cleaning device and cleaning method |
| CN108115553A (en) * | 2016-11-29 | 2018-06-05 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polisher and cmp method |
| US10453702B2 (en) | 2016-11-29 | 2019-10-22 | Semiconductor Manf. Intl. (Shanghai) Corporation | Chemical mechanical polishing device and chemical mechanical polishing method |
| CN108115553B (en) * | 2016-11-29 | 2019-11-29 | 中芯国际集成电路制造(上海)有限公司 | Chemical-mechanical polisher and cmp method |
| TWI674173B (en) * | 2017-06-09 | 2019-10-11 | 日商Ｔｏｗａ股份有限公司 | Grinding device and method for manufacturing the grinding product |
| CN109202724A (en) * | 2018-09-12 | 2019-01-15 | 上海华力集成电路制造有限公司 | Chemical mechanical polishing device and its operating method |
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