TWI779109B - Grinding method of workpiece - Google Patents
Grinding method of workpiece Download PDFInfo
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- TWI779109B TWI779109B TW107135335A TW107135335A TWI779109B TW I779109 B TWI779109 B TW I779109B TW 107135335 A TW107135335 A TW 107135335A TW 107135335 A TW107135335 A TW 107135335A TW I779109 B TWI779109 B TW I779109B
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- workpiece
- water
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- back surface
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000004575 stone Substances 0.000 claims abstract description 54
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000006061 abrasive grain Substances 0.000 claims abstract description 21
- 230000001681 protective effect Effects 0.000 claims abstract description 13
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 12
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
[課題]在被加工物的背面形成環狀補強部的研削方法中,防止以研削中的脫落砥粒的捲入為要因之對背面的刮痕的形成或被加工物的破裂的發生。 [解決手段]本發明之被加工物之研削方法係以研削砥石(42b)研削在表面(Wa)具有元件區域(Wa1)與外周剩餘區域(Wa2)的被加工物(W)的背面(Wb)的方法,其包含:以保護構件(T1)覆蓋被加工物(W)的表面(Wa)的保護步驟;在實施保護步驟後,在以相對鉛直方向以45度~180度的角度傾斜的旋轉軸(33)進行旋轉的吸盤平台(30)的保持面(30a),保持保護構件(T1)側的步驟;及利用以與保持面(30a)呈正交的旋轉軸(40)進行旋轉的研削砥石(42b),將對應元件區域(Wa1)的被加工物背面(Wb)一邊供給研削水一邊研削,形成圓形凹部(Wb1)、及包圍圓形凹部(Wb1)的環狀補強部(Wb2)的研削步驟,在該研削步驟中,係藉由被加工物(W)的傾斜而促進包含脫落砥粒的研削水的排出。[Problem] In the grinding method of forming a ring-shaped reinforcing part on the back surface of the workpiece, it is necessary to prevent the formation of scratches on the back surface or the occurrence of cracks in the workpiece due to the entanglement of the abrasive grains that fall out during grinding. [Solution] The grinding method of the workpiece of the present invention is to use the grinding stone (42b) to grind the back surface (Wb) of the workpiece (W) having the element region (Wa1) and the peripheral remaining region (Wa2) on the surface (Wa). ) method, comprising: a protection step of covering the surface (Wa) of a workpiece (W) with a protection member (T1); The holding surface (30a) of the suction cup platform (30) that the rotating shaft (33) rotates, the step of holding the protective member (T1) side; and utilizing the rotating shaft (40) that is orthogonal to the holding surface (30a) to rotate The grinding whetstone (42b) grinds the back surface (Wb) of the workpiece corresponding to the element area (Wa1) while supplying grinding water to form a circular concave portion (Wb1) and an annular reinforcing portion surrounding the circular concave portion (Wb1). (Wb2) The grinding step, in which the discharge of the grinding water including the dropped abrasive grains is promoted by the inclination of the workpiece (W).
Description
本發明係關於以研削砥石研削半導體晶圓等板狀被加工物的方法。The present invention relates to a method of grinding a plate-shaped workpiece such as a semiconductor wafer with a grinding whetstone.
在表面形成有複數IC或LSI等元件的被加工物係其背面被研削而被薄化成預定的厚度,此外,藉由切割裝置等分割裝置被分割成各個元件晶片而被利用在各種電子機器。 研削被加工物的背面的研削裝置係具備有:保持貼附有由樹脂等所成之表面保護構件的被加工物的吸盤平台;可旋轉地支持研削被保持在吸盤平台的被加工物的研削砥石的研削單元;及通過形成在構成研削單元的心軸的軸心的流路而對研削砥石供給研削水的研削水供給手段,可效率佳地研削被加工物。A workpiece with a plurality of components such as ICs or LSIs formed on the surface is ground to a predetermined thickness on the back, and is divided into individual component wafers by a dicing device or other dividing device and used in various electronic devices. The grinding device that grinds the back of the workpiece is equipped with: a suction cup table that holds the workpiece to which a surface protection member made of resin or the like is attached; a grinding machine that rotatably supports and grinds the workpiece held on the suction cup table The grinding unit of the grinding stone; and the grinding water supply means for supplying grinding water to the grinding grinding stone through the flow path formed in the shaft center of the spindle constituting the grinding unit can efficiently grind the workpiece.
近年來,為達成元件晶片的輕量化、小型化,在晶圓的研削方法中被要求被加工物的厚度更薄。但是,如上所示被形成為更薄的晶圓係剛性降低,不易處理,有在晶圓搬送時等破損之虞。因此,有一種研削方法係例如將被加工物研削較薄成為100μm以下,此外,僅將被加工物的背面之中對應表面之形成有元件的區域的區域研削較薄,並且使背面殘留對應表面之圍繞元件區域的外周剩餘區域的環狀的補強部,藉此使變薄的被加工物的處理更為容易(參照例如專利文獻1)。 [先前技術文獻] [專利文獻]In recent years, in order to achieve weight reduction and miniaturization of element wafers, thinner workpieces are required in wafer grinding methods. However, a thinner wafer as described above has lower rigidity, is difficult to handle, and may be damaged during wafer transfer or the like. Therefore, there is a grinding method that, for example, grinds the workpiece to be thinner to 100 μm or less. In addition, only the area on the back surface of the workpiece corresponding to the area where the device is formed is thinned, and the corresponding surface remains on the back surface. The ring-shaped reinforcing part surrounding the remaining area of the outer periphery of the element area makes it easier to handle the thinned workpiece (see, for example, Patent Document 1). [Prior Art Document] [Patent Document]
[專利文獻1]日本特開2007-19461號公報[Patent Document 1] Japanese Unexamined Patent Publication No. 2007-19461
(發明所欲解決之課題)(Problem to be solved by the invention)
但是,在如上所述之研削方法中,由於在被加工物的背面形成環狀補強部,因此在研削中,該環狀補強部形成堤防,包含由研削砥石脫落下來的砥粒的研削水會滯留在被加工物的圓形凹部內。接著,滯留在被加工物的圓形凹部內的脫落砥粒會被捲入在研削中的研削砥石而附著在研削砥石的前端的研削面。若以脫落砥粒附著在前端的研削面的狀態的研削砥石繼續進行研削時,會在被加工物的被研削面形成刮痕或發生被加工物破裂。However, in the above-mentioned grinding method, since the annular reinforcing portion is formed on the back surface of the workpiece, the annular reinforcing portion forms an embankment during grinding, and the grinding water including the abrasive grains falling off from the grinding stone will Stuck in the circular recess of the workpiece. Then, the dropped abrasive grains remaining in the circular concave portion of the workpiece are drawn into the grinding stone being ground and adhere to the grinding surface of the front end of the grinding stone. If grinding is continued with the grinding stone in the state where the dropped abrasive grains are attached to the grinding surface at the tip, scratches will be formed on the ground surface of the workpiece or the workpiece will be broken.
因此,本發明之目的在提供在研削被加工物的背面中對應元件區域的區域,形成圓形狀的凹部,且在對應圍繞元件區域的外周剩餘區域的晶圓的背面的區域形成環狀補強部的研削方法中,可防止在被加工物的背面形成刮痕或發生被加工物破裂的被加工物之研削方法。 (解決課題之手段)Therefore, the object of the present invention is to provide a circular concave portion formed in a region corresponding to the device region on the back surface of the grinding workpiece, and to form a ring-shaped reinforcing portion in a region corresponding to the back surface of the wafer surrounding the remaining region of the outer periphery of the device region. Among the grinding methods, the grinding method of the workpiece can prevent the formation of scratches on the back surface of the workpiece or the occurrence of cracks in the workpiece. (means to solve the problem)
藉由本發明,提供一種被加工物之研削方法,其係以研削砥石研削在表面具有形成有複數元件的元件區域、及圍繞該元件區域的外周剩餘區域的被加工物的背面的被加工物之研削方法,其係具備有:表面保護步驟,其係以保護構件覆蓋被加工物的表面;保持步驟,其係在實施該表面保護步驟之後,在以相對鉛直方向以45度~180度的角度傾斜的旋轉軸進行旋轉的吸盤平台的保持面,保持被加工物的保護構件側;及研削步驟,其係利用以與該保持面呈正交的旋轉軸進行旋轉的研削砥石,將對應該元件區域的被加工物的背面一邊供給研削水一邊研削,形成圓形凹部、及對應該外周剩餘區域且圍繞該圓形凹部的環狀補強部,在該研削步驟中,係藉由被加工物的傾斜而促進包含由研削砥石脫落下來的砥粒的研削水的排出。According to the present invention, there is provided a grinding method of a workpiece, which is to use a grinding whetstone to grind a workpiece having an element region in which a plurality of elements are formed on the surface, and a back surface of the workpiece having a remaining area around the periphery of the element region. A grinding method comprising: a surface protection step of covering the surface of a workpiece with a protective member; and a holding step of, after the surface protection step is carried out, grinding the surface at an angle of 45 degrees to 180 degrees relative to the vertical direction. The holding surface of the suction table that rotates on the inclined rotation axis holds the protection member side of the workpiece; and the grinding step uses the grinding stone that rotates on the rotation axis perpendicular to the holding surface to grind the corresponding element The back surface of the workpiece in the area is ground while supplying grinding water to form a circular concave portion and a ring-shaped reinforcing portion that surrounds the circular concave portion corresponding to the remaining area of the outer periphery. In this grinding step, the The inclination promotes the discharge of the grinding water including the abrasive grains dropped from the grinding stone.
較佳為前述保護構件係由黏著帶所構成。It is preferable that the said protective member is comprised from an adhesive tape.
較佳為在前述研削步驟中,包含由前述研削砥石脫落下來的砥粒的研削水的排出位置係成為前述旋轉軸呈傾斜的吸盤平台的最下點,因此以該研削砥石的旋轉軌跡與研削水的該排出位置不相重疊的方式將該研削砥石定位。 (發明之效果)Preferably, in the above-mentioned grinding step, the discharge position of the grinding water containing the abrasive grains dropped from the grinding stone is the lowest point of the suction cup platform whose rotation axis is inclined, so that the rotation track of the grinding stone and the grinding stone The grinding stone is positioned in such a way that the discharge positions of the water do not overlap. (Effect of Invention)
藉由本發明,在研削步驟中,藉由被加工物的傾斜,促進包含由研削砥石脫落下來的砥粒的研削水的排出,因此在研削中,研削砥石捲入脫落砥粒的情形減少,且可防止在被加工物的背面形成有刮痕、或發生被加工物破裂的情形。According to the present invention, in the grinding step, the inclination of the workpiece promotes the discharge of the grinding water including the abrasive grains that have fallen off from the grinding stone, so that during grinding, the grinding stone is less likely to be involved in the falling abrasive grains, and Prevents scratches from being formed on the back of the workpiece or breakage of the workpiece.
在研削步驟中,包含由研削砥石脫落下來的砥粒的研削水的排出位置係成為旋轉軸呈傾斜的吸盤平台的最下點,因此形成為以研削砥石的旋轉軌跡與研削水的該排出位置不相重疊的方式將研削砥石定位者,藉此包含由研削砥石脫落下來的砥粒的研削水的排出可更效率佳地進行。In the grinding step, the discharge position of the grinding water including the abrasive grains dropped from the grinding stone is the lowest point of the sucker platform whose rotation axis is inclined. The grinding stones are positioned in such a way that they do not overlap, whereby the discharge of the grinding water including the abrasive grains falling off from the grinding stones can be performed more efficiently.
圖1所示之被加工物W係例如將矽作為母材的外形為圓形板狀的半導體晶圓,在其表面Wa係設有:元件區域Wa1、及圍繞元件區域Wa1的外周剩餘區域Wa2。外周剩餘區域Wa2係在圖1中比被加工物W的表面Wa中以二點鏈線所示之假想線L1更為外側的區域。元件區域Wa1係以呈正交叉的複數分割預定線S被區劃成格子狀,在被區劃成格子狀的各區域係分別形成有IC等元件D。被加工物W的背面Wb係成為被施行研削加工的被研削面。其中,被加工物W係除了矽以外,亦可由砷化鎵、藍寶石、氮化鎵、或矽碳化物等所構成。The workpiece W shown in FIG. 1 is, for example, a circular plate-shaped semiconductor wafer that uses silicon as a base material. On its surface Wa, there are: an element region Wa1 and an outer peripheral remaining region Wa2 surrounding the element region Wa1. . The remaining outer peripheral area Wa2 is an area outside of the imaginary line L1 shown by the two-dot chain line on the surface Wa of the workpiece W in FIG. 1 . The element region Wa1 is partitioned into a grid by a plurality of dividing lines S crossing at right angles, and devices D such as ICs are formed in each of the regions partitioned into the grid. The back surface Wb of the workpiece W becomes a ground surface to be ground. Wherein, besides silicon, the workpiece W may also be composed of gallium arsenide, sapphire, gallium nitride, or silicon carbide.
以下說明實施本發明之研削方法而將圖1所示之被加工物W研削至預定厚度時的各步驟。The steps for grinding the workpiece W shown in FIG. 1 to a predetermined thickness by implementing the grinding method of the present invention will be described below.
(1)表面保護步驟 在對被加工物W施行研削加工時,在被加工物W的表面Wa係貼附有例如與被加工物W為大致同徑的圓形的保護構件T1,元件區域Wa1及外周剩餘區域Wa2係形成為以保護構件T1予以覆蓋且保護的狀態。保護構件T1係例如具備基材層及黏著層的黏著帶,但是並非為限定於此者,亦可將玻璃基板等具剛性的硬板以接著劑貼附在表面Wa而形成為保護構件,亦可在表面Wa塗佈液體樹脂之後,對該樹脂加熱或照射紫外線等,使該樹脂硬化,形成覆蓋被加工物W的表面Wa的保護構件。(1) Surface protection step When the workpiece W is ground, the surface Wa of the workpiece W is attached with, for example, a circular protective member T1 having substantially the same diameter as the workpiece W, and the element region Wa1 And the remaining outer periphery area Wa2 is formed in the state covered and protected by the protection member T1. The protective member T1 is, for example, an adhesive tape provided with a base material layer and an adhesive layer, but it is not limited to this, and a rigid hard plate such as a glass substrate may be attached to the surface Wa with an adhesive to form a protective member. After the liquid resin is applied to the surface Wa, the resin may be cured by heating or irradiating with ultraviolet light, thereby forming a protective member covering the surface Wa of the object W to be processed.
(2)保持步驟 以保護構件T1覆蓋表面Wa的被加工物W係被搬送至圖2所示之研削裝置2。研削裝置2係具備有:吸引保持被加工物W的吸盤平台3;及以旋轉的研削砥石42b研削被加工物W的研削單元4。吸盤平台3係例如其外形為圓形狀,由多孔構件等所成,具備有:吸引保持被加工物W的保持部30、及支持保持部30的框體31。保持部30係透過配管及旋轉接頭等而連通至由真空發生裝置及壓縮機等所成之未圖示的吸引源,因未圖示的吸引源進行吸引所衍生的吸引力被傳達至保持面30a,藉此吸盤平台3係在保持面30a上吸引保持被加工物W。(2) Holding step The workpiece W whose surface Wa is covered with the protective member T1 is transported to the
吸盤平台3係可藉由未圖示的Y軸方向進給手段而以Y軸方向往返移動。此外,在吸盤平台3的底面側係連接有旋轉軸33的一端,在該旋轉軸33的另一端係連接有馬達34。旋轉軸33係相對鉛直方向(Z軸方向)以45度~180度的角度傾斜,吸盤平台3亦以與旋轉軸33的傾斜角度為相同角度,相對鉛直方向呈傾斜。馬達34使旋轉軸33旋轉,藉此,吸盤平台3亦繞著以預定角度傾斜的旋轉軸33的軸心旋轉。The
研削單元4係具備有:旋轉軸40;將旋轉軸40旋轉驅動的未圖示的馬達;連接於旋轉軸40的下端的圓形狀的架座41;及可安裝卸下地連接於架座41的下面的研削輪42。接著,研削輪42係具備有:輪基台42a、及環狀配設在輪基台42a的底面的外周部的大致長方體形狀的複數研削砥石42b。研削砥石42b係以例如樹脂結合或金屬結合等固接鑽石砥粒等而成形。配列成環狀的研削砥石42b係例如形成為:其最外周的直徑大於被加工物W的元件區域Wa1的半徑且小於元件區域Wa1的直徑,而且,其最內周的直徑小於元件區域Wa1的半徑。The
此外,旋轉軸40係與吸盤平台3的旋轉軸33同樣地,相對鉛直方向(Z軸方向)以45度~180度的角度傾斜,研削單元4全體亦相對鉛直方向,以與旋轉軸40的傾斜角度為相同角度,以鉛直方向傾斜。亦即,例如若吸盤平台3的旋轉軸33相對鉛直方向傾斜45度時,旋轉軸40亦相對鉛直方向傾斜45度,研削砥石42b係一邊繞著與吸盤平台3的保持面30a呈正交的旋轉軸40的軸心旋轉一邊研削被加工物W的背面Wb。 以鉛直方向傾斜預定角度的研削單元4係可以與呈傾斜的吸盤平台3的保持面30a間離或接近的方向(旋轉軸40的軸方向),藉由未圖示的研削進給手段進行移動。In addition, the
在旋轉軸40的內部,以旋轉軸40的軸方向貫穿形成有成為研削水的通道的流路43。該流路43係通過架座41,其下端側形成有開口,俾可在輪基台42a的底面朝向研削砥石42b噴出研削水。此外,在流路43的上端側係連通有對流路43供給純水等研削水的研削水供給手段44。Inside the rotating
如圖2所示,在保持步驟中,首先,在表面Wa貼附有保護構件T1的被加工物W形成為例如旋轉軸33相對鉛直方向以45度的角度傾斜的狀態的吸盤平台3的保持面30a的中心與被加工物W的中心大致相一致且背面Wb露出,而被載置於保持面30a上。接著,藉由未圖示的吸引源所衍生的吸引力被傳達至保持面30a,藉此形成為吸盤平台3以保持面30a吸引保持被加工物W的保護構件T1側的狀態。As shown in FIG. 2 , in the holding step, first, the workpiece W with the protective member T1 attached to the surface Wa is held, for example, in a state where the rotating
(3)研削步驟 接著,保持有被加工物W的吸盤平台3朝Y軸方向移動至相對鉛直方向以45度的角度傾斜的狀態的研削單元4之下,進行研削單元4所配備的研削輪42與被加工物W的對位。該對位係例如在被加工物W的外周剩餘區域Wa2的內周緣,亦即背面Wb,假想線L1與研削砥石42b的旋轉軌道的最外周的一部分相重疊,而且,以研削砥石42b的旋轉軌道通過被加工物W的旋轉中心的方式進行。此外,在本研削步驟中,包含從後述之研削砥石42b脫落下來的砥粒的研削水的排出位置係成為相對鉛直方向傾斜45度的吸盤平台3之圖2、3所示的最下點。因此,為使圖3中以虛線所示之研削砥石42b的旋轉軌跡與研削水的排出位置不相重疊,如圖2所示,例如研削砥石42b由被加工物W的+Y方向側的排出位置,被定位在以中央為基準之相反側的-Y方向側的預定的位置。其中,研削砥石42b的定位並非限定於本實施形態中之例,亦可將研削砥石42b定位在被加工物W的背面Wb中描繪圖3中以一點鏈線所示之任何旋轉軌跡的預定位置,以使包含脫落下來的砥粒的研削水的排出位置與研削砥石42b的旋轉軌跡不相重疊。(3) Grinding step Next, the chuck table 3 holding the workpiece W is moved in the Y-axis direction under the
如圖2所示,在進行研削砥石42b與被加工物W的對位之後,伴隨未圖示的馬達旋轉驅動旋轉軸40,研削砥石42b進行旋轉。此外,研削單元4朝向接近吸盤平台3的保持面30a之圖2所示之箭號E方向被研削進給,旋轉的研削砥石42b抵接於被加工物W的背面Wb,藉此進行背面Wb的研削。此外,研削加工中,伴隨吸盤平台3繞著相對鉛直方向以45度的角度呈傾斜的旋轉軸33的軸心旋轉,被保持在吸盤平台3上的被加工物W亦旋轉。As shown in FIG. 2 , after the grinding
研削加工中,例如被加工物W的旋轉中心恒常位於比研削砥石42b的旋轉軌道的最外周更為內側而且比旋轉軌道的內周更為外側,研削砥石42b進行旋轉。此外,該研削砥石42b的旋轉軌道的最外周以不會接觸被加工物W之對應外周剩餘區域Wa2的背面Wb的外周區域的方式,亦即,不會大於假想線L1而突出於外側的方式,研削砥石42b進行旋轉。因此,研削砥石42b將被加工物W之對應元件區域Wa1的背面Wb的中央區域研削成圓形凹狀,如圖4所示,在對應元件區域Wa1的背面Wb的中央區域形成圓形凹部Wb1。此外,在被加工物W的背面Wb,以朝向+Z方向突出的方式形成有對應外周剩餘區域Wa2且圍繞圓形凹部Wb1的環狀補強部Wb2。During grinding, for example, the center of rotation of the workpiece W is always located inside the outermost circumference of the orbit of rotation of the grinding
研削加工中,係將研削水M通過旋轉軸40中的流路43而對研削砥石42b與被加工物W的接觸部位進行供給,而將研削砥石42b與被加工物W的背面Wb的接觸部位進行冷卻/洗淨。已到達該接觸部位的洗淨水係藉由因吸盤平台3旋轉所發生的離心力,連同研削屑及從研削砥石42b脫落下來的砥粒一起由各研削砥石42b彼此的間隙流出至外部。接著,在本發明之研削方法中,藉由被吸引保持在相對鉛直方向傾斜45度的吸盤平台3上的被加工物W的傾斜,包含從研削砥石42b脫落下來的砥粒的研削水M係朝向圖4所示的排出位置而在圓形凹部Wb1上流動。接著,研削水M係藉由被加工物W的傾斜而被加速,在排出位置越過環狀補強部Wb2而被排出至被加工物W外。此外,由於研削水M的排出位置與研削砥石42b的旋轉軌跡不相重疊,因此,並不會有妨礙包含由研削砥石42b脫落下來的砥粒的研削水M的排出的情形。在一邊供給研削水M一邊將被加工物W研削至所希望的厚度為止之後,研削單元4由被加工物W分離而研削結束。During the grinding process, the grinding water M is supplied to the contact portion of the grinding
如上所述,在本發明之研削方法中係具備有:以保護構件T1覆蓋被加工物W的表面Wa的表面保護步驟;在實施表面保護步驟後,在以相對鉛直方向以45度~180度的角度傾斜的旋轉軸33進行旋轉的吸盤平台3的保持面30a,保持被加工物W的保護構件T1側的保持步驟;及利用以與保持面30a呈正交的旋轉軸40進行旋轉的研削砥石42b,將對應元件區域Wa1的被加工物W的背面Wb一邊供給研削水M一邊研削,形成圓形凹部Wb1、及對應外周剩餘區域Wa2且圍繞圓形凹部Wb1的環狀補強部Wb2的研削步驟,因此,在研削步驟中,係藉由被加工物W的傾斜而促進包含由研削砥石42b脫落下來的砥粒的研削水M的排出,因此在研削中,研削砥石42b捲入脫落砥粒的情形減少,可防止在被加工物W的背面Wb形成有刮痕、或發生被加工物W破裂的情形。As mentioned above, in the grinding method of the present invention, it is provided with: the surface protection step of covering the surface Wa of the workpiece W with the protection member T1; The holding
此外,在研削步驟中,包含由研削砥石42b脫落下來的砥粒的研削水M的排出位置係成為旋轉軸33呈傾斜的吸盤平台3的最下點,因此形成為以研削砥石42b的旋轉軌跡與研削水M的排出位置不相重疊的方式將研削砥石42b定位者,藉此更效率佳地進行包含由研削砥石42b脫落下來的砥粒的研削水M的排出。In addition, in the grinding step, the discharge position of the grinding water M containing the abrasive grains dropped by the grinding
其中,本發明之研削方法並非限定於上述實施形態,此外,關於所附圖式中所圖示的研削裝置2的各構成,亦非限定於此,可在可發揮本發明之效果的範圍內適當變更。例如,亦可形成為使用噴射噴嘴,由外側對研削砥石42b與被加工物W的接觸部位供給研削水者,而非使其通過研削單元4的旋轉軸40來進行對研削砥石42b與被加工物W的接觸部位的研削水的供給。However, the grinding method of the present invention is not limited to the above-mentioned embodiments. In addition, the respective configurations of the grinding
W‧‧‧被加工物Wa‧‧‧被加工物的表面Wa1‧‧‧元件區域Wa2‧‧‧外周剩餘區域S‧‧‧分割預定線D‧‧‧元件Wb‧‧‧被加工物的背面Wb1‧‧‧圓形凹部Wb2‧‧‧環狀補強部L1‧‧‧假想線M‧‧‧研削水T1‧‧‧保護構件2‧‧‧研削裝置3‧‧‧吸盤平台30‧‧‧保持部30a‧‧‧保持面31‧‧‧框體33‧‧‧旋轉軸34‧‧‧馬達4‧‧‧研削單元40‧‧‧旋轉軸41‧‧‧架座42‧‧‧研削輪42a‧‧‧輪基台42b‧‧‧研削砥石43‧‧‧流路44‧‧‧研削水供給手段W‧‧‧Workpiece Wa‧‧‧Surface of Workpiece Wa1‧‧‧Component Area Wa2‧‧‧Residual Perimeter Area S‧‧‧Separation Schedule D‧‧‧Component Wb‧‧‧Backside of Workpiece Wb1‧‧‧circular recess Wb2‧‧‧annular reinforcing part L1‧‧‧imaginary line M‧‧‧grinding water T1‧‧‧
圖1係顯示被加工物及保護被加工物的表面的保護構件之一例的斜視圖。 圖2係顯示以研削砥石研削被保持在吸盤平台的被加工物的狀態的剖面圖。 圖3係說明研削砥石的旋轉軌跡與研削水的排出位置不相重疊的狀態的模式斜視圖。 圖4係顯示研削水從經研削的被加工物的背面上被排出的狀態的剖面圖。Fig. 1 is a perspective view showing an example of a workpiece and a protection member protecting the surface of the workpiece. Fig. 2 is a cross-sectional view showing a state in which a workpiece held on a chuck table is ground with a grinding stone. Fig. 3 is a schematic perspective view illustrating a state where the rotation track of the grinding stone and the discharge position of the grinding water do not overlap. Fig. 4 is a cross-sectional view showing a state in which grinding water is discharged from the back surface of a ground workpiece.
2‧‧‧研削裝置 2‧‧‧Grinding device
3‧‧‧吸盤平台 3‧‧‧Suction cup platform
4‧‧‧研削單元 4‧‧‧Grinding unit
30‧‧‧保持部 30‧‧‧Maintenance Department
30a‧‧‧保持面 30a‧‧‧Retaining surface
31‧‧‧框體 31‧‧‧frame
33‧‧‧旋轉軸 33‧‧‧rotation axis
34‧‧‧馬達 34‧‧‧Motor
40‧‧‧旋轉軸 40‧‧‧rotation axis
41‧‧‧架座 41‧‧‧Frame
42‧‧‧研削輪 42‧‧‧Grinding wheel
42a‧‧‧輪基台 42a‧‧‧wheel abutment
42b‧‧‧研削砥石 42b‧‧‧grinding whetstone
43‧‧‧流路 43‧‧‧flow path
44‧‧‧研削水供給手段 44‧‧‧Development of water supply means
L1‧‧‧假想線 L1‧‧‧imaginary line
M‧‧‧研削水 M‧‧‧Grinding water
T1‧‧‧保護構件 T1‧‧‧protective components
W‧‧‧被加工物 W‧‧‧processed object
Wa‧‧‧被加工物的表面 Wa‧‧‧surface of workpiece
Wa1‧‧‧元件區域 Wa1‧‧‧component area
Wa2‧‧‧外周剩餘區域 Wa2‧‧‧outer peripheral area
Wb‧‧‧被加工物的背面 Wb‧‧‧back side of workpiece
Wb1‧‧‧圓形凹部 Wb1‧‧‧circular recess
Wb2‧‧‧環狀補強部 Wb2‧‧‧ring reinforcement part
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JP6341709B2 (en) * | 2014-03-18 | 2018-06-13 | 株式会社ディスコ | Wafer processing method |
KR20160115369A (en) * | 2015-03-27 | 2016-10-06 | 주식회사 케이씨텍 | Chemical mechanical polishing apparatus |
-
2017
- 2017-10-12 JP JP2017198406A patent/JP7049801B2/en active Active
-
2018
- 2018-10-03 SG SG10201808745WA patent/SG10201808745WA/en unknown
- 2018-10-05 KR KR1020180119044A patent/KR20190041414A/en not_active Application Discontinuation
- 2018-10-05 US US16/153,302 patent/US20190111537A1/en not_active Abandoned
- 2018-10-08 TW TW107135335A patent/TWI779109B/en active
- 2018-10-10 CN CN201811176230.8A patent/CN109659226A/en active Pending
- 2018-10-11 DE DE102018217410.5A patent/DE102018217410A1/en active Pending
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TW200403798A (en) * | 2002-08-19 | 2004-03-01 | Dainippon Screen Mfg | Substrate processing apparatus and substrate cleaning unit |
TW201350263A (en) * | 2012-04-24 | 2013-12-16 | Koyo Machine Ind Co Ltd | Double-end surface grinding method and double-end surface grindin |
JP2015100865A (en) * | 2013-11-22 | 2015-06-04 | 株式会社ディスコ | Grinding device |
Also Published As
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TW201914744A (en) | 2019-04-16 |
SG10201808745WA (en) | 2019-05-30 |
CN109659226A (en) | 2019-04-19 |
US20190111537A1 (en) | 2019-04-18 |
DE102018217410A1 (en) | 2019-04-18 |
KR20190041414A (en) | 2019-04-22 |
JP2019075408A (en) | 2019-05-16 |
JP7049801B2 (en) | 2022-04-07 |
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