TW201630063A - Processing method for wafers of two-layer structure - Google Patents
Processing method for wafers of two-layer structure Download PDFInfo
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- TW201630063A TW201630063A TW104133536A TW104133536A TW201630063A TW 201630063 A TW201630063 A TW 201630063A TW 104133536 A TW104133536 A TW 104133536A TW 104133536 A TW104133536 A TW 104133536A TW 201630063 A TW201630063 A TW 201630063A
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- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 235000012431 wafers Nutrition 0.000 title abstract description 191
- 238000005520 cutting process Methods 0.000 claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本發明是有關於一種將外周緣具備倒角部的第1晶圓貼合於第2晶圓的二層構造晶圓的加工方法。 The present invention relates to a method of processing a two-layer structure wafer in which a first wafer having a chamfered portion on an outer peripheral edge is bonded to a second wafer.
近年來，為了實現小型輕量的元件晶片，所以一直在尋求將矽等之半導體材料所形成的晶圓薄化加工的方法。例如，在以表面的切割道(分割預定線)所劃分出的區域中形成有IC等之元件的晶圓，是藉由磨削背面側而被薄化。薄化後的晶圓是沿著切割道而被分割成與各個元件對應的複數個元件晶片。 In recent years, in order to realize a small and lightweight component wafer, a method of thinning a wafer formed of a semiconductor material such as tantalum has been sought. For example, a wafer in which an element such as an IC is formed in a region defined by a dicing street (divided line of division) on the surface is thinned by grinding the back side. The thinned wafer is divided into a plurality of element wafers corresponding to the respective elements along the scribe line.
在像這樣的元件晶片之製造上所使用的晶圓之外周緣，會為了防止搬送中的缺損等而形成有倒角。然而，當以磨削來薄化已形成倒角的晶圓時，則晶圓之外周緣會薄成像刀刃一樣地尖細，反而變得容易產生缺損。 The outer periphery of the wafer used for the manufacture of the element wafer as described above is chamfered in order to prevent defects or the like during conveyance. However, when the chamfered wafer is thinned by grinding, the outer periphery of the wafer is thinned like a thin image forming blade, and the defect is easily generated.
於是，在以磨削進行的薄化之前，切削去除晶圓之已倒角的部分(倒角部)的晶圓之加工方法已被提出(參照例如專利文獻1)。在這個加工方法中，是藉由在磨削之前使切削刀切入外周緣而切削去除倒角部，來防止外周緣薄 成像刀刃一樣地尖細之情形。 Then, before the thinning by the grinding, a method of cutting a wafer in which the chamfered portion (chamfered portion) of the wafer is removed has been proposed (see, for example, Patent Document 1). In this processing method, the chamfered portion is cut and removed by cutting the cutter into the outer periphery before grinding to prevent the outer peripheral edge from being thin. The image is sharply tapered.
但是，在製造以玻璃基板等支撐元件晶片的表面側之CMOS影像感測器，或是將元件晶片於厚度方向上積層而以矽貫通電極等連接的積層元件晶片等的時候，會有形成例如已貼合有2片晶圓之二層構造晶圓之情形。 However, when manufacturing a CMOS image sensor on the surface side of a support element wafer such as a glass substrate, or a build-up element wafer in which the element wafer is laminated in the thickness direction and connected by a through electrode or the like, for example, A case where a two-layer structured wafer of two wafers has been bonded.
在此情形下，當欲如上述地於去除倒角部後貼合2片晶圓時，洗淨附著有切削屑之晶圓的步驟就會變得必要，所以一般而言，是在貼合晶圓之後再去除倒角部。 In this case, when two wafers are to be bonded after the chamfered portion is removed as described above, the step of cleaning the wafer to which the chips are attached becomes necessary, so that it is generally bonded. The chamfer is removed after the wafer.
專利文獻1：日本專利特開2000-173961號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2000-173961
在形成二層構造之晶圓之時，當將晶圓貼合成使2片晶圓各自具備的元件彼此接合時，會有導致2片晶圓的中心變得不一致的情形。 When a wafer having a two-layer structure is formed, when the wafers are bonded and the elements provided in the two wafers are bonded to each other, the centers of the two wafers may become inconsistent.
在此狀態下，例如沿著位於上方的第1晶圓之外周緣來除去第1晶圓的倒角部時，該第1晶圓就會以相對於位於下方的第2晶圓出現偏差的狀態留下。這種偏心狀態在之後的步驟中會變成問題。 In this state, for example, when the chamfered portion of the first wafer is removed along the outer periphery of the first wafer located above, the first wafer is deviated from the second wafer located below. The status is left. This eccentric state becomes a problem in the subsequent steps.
本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種已消除晶圓的中心之偏差的二層構造晶圓的加工方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method for processing a two-layer structure wafer in which variations in the center of a wafer are eliminated.
依據本發明提供的二層構造晶圓的加工方法，該二層構造晶圓是使外周緣具備倒角部的第1晶圓之表面貼合於第2晶圓之表面而形成，且第1晶圓之中心與第2晶圓之中心有偏差，該二層構造晶圓的加工方法之特徵在於包含：保持步驟，以可旋轉的工作夾台之保持面保持二層構造晶圓的第2晶圓側；輪廓算出步驟，已實施該保持步驟後，以攝像機構從第1晶圓側拍攝使第2晶圓的表面露出之區域，並檢測3點以上的第2晶圓之外周緣的座標以算出第2晶圓的輪廓；倒角部去除步驟，已實施該輪廓算出步驟後，將切削刀定位在第2晶圓的外周緣上，且藉由使該切削刀切入第1晶圓的外周緣並且使該工作夾台旋轉，來沿著第2晶圓的外周緣環狀地切削第1晶圓的外周緣，而以使第1晶圓的中心與第2晶圓的中心形成一致的方式來去除第1晶圓的倒角部；及磨削步驟，已實施該倒角部去除步驟後，將第1晶圓從背面磨削以薄化至預定的厚度。 According to the method for processing a two-layer structure wafer according to the present invention, the surface of the first wafer having the chamfered portion on the outer peripheral edge is bonded to the surface of the second wafer, and the first The center of the wafer is deviated from the center of the second wafer, and the processing method of the two-layer structure wafer includes: a holding step of holding the second layer of the wafer with the holding surface of the rotatable working chuck In the wafer side and the contour calculation step, after the holding step is performed, the imaging device detects an area in which the surface of the second wafer is exposed from the first wafer side, and detects the outer periphery of the second wafer of three or more points. The coordinate is used to calculate the contour of the second wafer; the chamfering portion removing step is performed after the contour calculation step is performed, the cutting blade is positioned on the outer periphery of the second wafer, and the cutting blade is cut into the first wafer The outer periphery of the second wafer is annularly cut along the outer periphery of the second wafer to form the outer periphery of the first wafer, so that the center of the first wafer and the center of the second wafer are formed. a method of removing the chamfered portion of the first wafer in a consistent manner; and a grinding step that has been implemented After the step of removing the corner portions, the first wafer from the back surface grinding to thinned to a predetermined thickness.
在本發明中，第1晶圓及第2晶圓宜以已將形成於各自的表面上的元件彼此位置對齊的狀態來使其貼合。 In the present invention, it is preferable that the first wafer and the second wafer are bonded to each other in such a manner that the elements formed on the respective surfaces are aligned with each other.
由於本發明的二層構造晶圓的加工方法包含從第1晶圓側拍攝使第2晶圓之表面露出的區域，而算出第2晶 圓的輪廓之輪廓算出步驟、和沿著第2晶圓的外周緣切削第1晶圓的外周緣，而以使第1晶圓的中心與第2晶圓的中心形成一致的方式來去除第1晶圓的倒角部的倒角部去除步驟，所以能夠消除晶圓的中心之偏差。 The method for processing a two-layer structure wafer according to the present invention includes calculating a region in which the surface of the second wafer is exposed from the first wafer side, thereby calculating the second crystal. The contour calculation step of the circular contour and the outer periphery of the first wafer are cut along the outer periphery of the second wafer, and the center of the first wafer is aligned with the center of the second wafer to remove the first Since the chamfering portion removing step of the chamfered portion of the wafer is performed, the variation in the center of the wafer can be eliminated.
11‧‧‧二層構造晶圓 11‧‧‧Two-layer structured wafer
2‧‧‧切削裝置 2‧‧‧Cutting device
21‧‧‧第1晶圓 21‧‧‧1st wafer
21a、31a‧‧‧表面 21a, 31a‧‧‧ surface
21b、31b‧‧‧背面 21b, 31b‧‧‧ back
21c、31c‧‧‧外周緣 21c, 31c‧‧‧ outer periphery
23、33‧‧‧切割道(分割預定線) 23, 33‧‧‧ cutting road (segmentation line)
25、35‧‧‧元件 25, 35‧‧‧ components
22‧‧‧磨削裝置 22‧‧‧ grinding device
24、4‧‧‧工作夾台 24, 4‧‧‧Working table
24a、4a‧‧‧保持面 24a, 4a‧‧‧ Keep face
26‧‧‧磨削單元 26‧‧‧ grinding unit
28‧‧‧主軸 28‧‧‧ Spindle
30‧‧‧輪座 30‧‧‧ wheel seat
31‧‧‧第2晶圓 31‧‧‧2nd wafer
32‧‧‧磨削輪 32‧‧‧ grinding wheel
34‧‧‧輪基台 34‧‧‧ wheel abutment
36‧‧‧磨削磨石 36‧‧‧ grinding grinding stone
6‧‧‧照相機(攝像手段) 6‧‧‧ camera (camera means)
8‧‧‧切削單元 8‧‧‧Cutting unit
10‧‧‧切削刀 10‧‧‧Cutter
P1、P2、P3‧‧‧點 P1, P2, P3‧‧ points
A‧‧‧區域 A‧‧‧ area
圖1(A)是模式地顯示二層構造晶圓之構成例的分解立體圖，圖1(B)是模式地顯示二層構造晶圓之構成例的立體圖。 1(A) is an exploded perspective view schematically showing a configuration example of a two-layer structure wafer, and FIG. 1(B) is a perspective view schematically showing a configuration example of a two-layer structure wafer.
圖2(A)是說明保持步驟及輪廓算出步驟的側面圖，圖2(B)是說明輪廓算出步驟的平面圖。 2(A) is a side view for explaining a holding step and a contour calculating step, and FIG. 2(B) is a plan view for explaining a contour calculating step.
圖3(A)是用於說明倒角部去除步驟的側面圖，圖3(B)是模式地顯示已去除第1晶圓之倒角部的二層構造晶圓的側面圖。 3(A) is a side view for explaining a chamfering portion removing step, and FIG. 3(B) is a side view schematically showing a two-layer structure wafer from which a chamfered portion of the first wafer has been removed.
圖4(A)是用於說明磨削步驟的側面圖，圖4(B)是模式地顯示第1晶圓已被薄化的二層構造晶圓的側面圖。 4(A) is a side view for explaining a grinding step, and FIG. 4(B) is a side view schematically showing a two-layer structure wafer in which a first wafer has been thinned.
參照所附圖式，針對本發明之實施形態進行說明。本實施形態的二層構造晶圓的加工方法包含保持步驟、輪廓算出步驟、倒角部去除步驟、以及磨削步驟。 Embodiments of the present invention will be described with reference to the accompanying drawings. The method for processing a two-layer structure wafer according to the present embodiment includes a holding step, a contour calculating step, a chamfering portion removing step, and a grinding step.
在保持步驟中，是以工作夾台之保持面保持二層構造晶圓的第2晶圓側。在輪廓算出步驟中，是從第1晶圓側拍攝第2晶圓之露出的區域，以算出第2晶圓的輪廓。 In the holding step, the second wafer side of the two-layer structure wafer is held by the holding surface of the work chuck. In the contour calculation step, the exposed area of the second wafer is imaged from the first wafer side to calculate the contour of the second wafer.
在倒角部去除步驟中，是沿著第2晶圓的外周緣 切削第1晶圓的外周緣，而以使第1晶圓的中心與第2晶圓的中心形成一致的方式來去除第1晶圓的倒角部。在磨削步驟中，是將第1晶圓磨削而薄化至預定的厚度。以下，針對本實施形態的二層構造晶圓的加工方法加以詳細說明。 In the chamfer removal step, along the outer periphery of the second wafer The outer peripheral edge of the first wafer is cut, and the chamfered portion of the first wafer is removed so that the center of the first wafer and the center of the second wafer are aligned. In the grinding step, the first wafer is ground and thinned to a predetermined thickness. Hereinafter, a method of processing a two-layer structure wafer of the present embodiment will be described in detail.
圖1(A)是模式地顯示本實施形態之二層構造晶圓之構成例的分解立體圖，圖1(B)是模式地顯示二層構造晶圓之構成例的立體圖。如圖1(A)及圖1(B)所示，本實施形態的二層構造晶圓11包含形成為圓盤狀的第1晶圓21與第2晶圓31。 1(A) is an exploded perspective view schematically showing a configuration example of a two-layer structure wafer of the embodiment, and FIG. 1(B) is a perspective view schematically showing a configuration example of a two-layer structure wafer. As shown in FIG. 1(A) and FIG. 1(B), the two-layer structure wafer 11 of the present embodiment includes a first wafer 21 and a second wafer 31 which are formed in a disk shape.
第1晶圓21的表面21a及第2晶圓31的表面31a，各自以排列成格子狀的複數條切割道(分割預定線)23、33而被劃分為複數個區域，且在各個區域中形成有IC等的元件25、35。在第1晶圓21的外周緣21c及第2晶圓31的外周緣31c各自形成有已倒角加工的倒角部。 The surface 21a of the first wafer 21 and the surface 31a of the second wafer 31 are each divided into a plurality of regions by a plurality of dicing streets (divided lines) 23 and 33 arranged in a lattice, and in each region. Elements 25 and 35 of an IC or the like are formed. A chamfered portion chamfered is formed on each of the outer peripheral edge 21c of the first wafer 21 and the outer peripheral edge 31c of the second wafer 31.
如圖1(A)所示，二層構造晶圓11是藉由將第1晶圓21的表面21a貼合於第2晶圓31的表面31a而形成。本實施形態中，是將第1晶圓21及第2晶圓31，以已將形成於各自的表面21a、31a上的元件25、35彼此位置對齊的狀態來使其貼合。 As shown in FIG. 1(A), the two-layer structure wafer 11 is formed by bonding the surface 21a of the first wafer 21 to the surface 31a of the second wafer 31. In the present embodiment, the first wafer 21 and the second wafer 31 are bonded to each other in such a manner that the elements 25 and 35 formed on the respective surfaces 21a and 31a are aligned with each other.
藉此，就能形成將第1晶圓21之元件25與第2晶圓31之元件35接合的接合元件。本實施形態中，是在去除了像這樣形成的二層構造晶圓11之第1晶圓21所具備的倒角部之後，再將第1晶圓21磨削而薄化。 Thereby, a bonding element that bonds the element 25 of the first wafer 21 and the element 35 of the second wafer 31 can be formed. In the present embodiment, after the chamfered portion of the first wafer 21 of the two-layer structure wafer 11 thus formed is removed, the first wafer 21 is ground and thinned.
但是，如上所述，當將第1晶圓21及第2晶圓31 貼合成使第1晶圓21及第2晶圓31各自具備的元件25、35相接合時，會如圖1(B)所示，有第1晶圓21及第2晶圓31的中心變得不一致之情形。 However, as described above, when the first wafer 21 and the second wafer 31 are to be used When the elements 25 and 35 provided in each of the first wafer 21 and the second wafer 31 are joined together, as shown in FIG. 1(B), the center of the first wafer 21 and the second wafer 31 are changed. Inconsistent situation.
像這樣，第1晶圓21及第2晶圓31的中心出現偏差的狀態(偏心狀態)，在之後的磨削步驟等中會成為問題。於是，在本實施形態的二層構造晶圓的加工方法中，是以可消除第1晶圓21及第2晶圓31的中心之偏差的方式來加工二層構造晶圓11。 In this manner, the state in which the centers of the first wafer 21 and the second wafer 31 are deviated (eccentric state) may become a problem in the subsequent grinding step or the like. Then, in the method of processing a two-layer structure wafer of the present embodiment, the two-layer structure wafer 11 is processed so as to eliminate variations in the centers of the first wafer 21 and the second wafer 31.
具體而言，首先會實施以切削裝置的工作夾台保持上述二層構造晶圓11的保持步驟。圖2(A)是用於說明保持步驟及接下來的輪廓算出步驟的側面圖。如圖2(A)所示，在本實施形態中所使用的切削裝置2具備有吸引保持二層構造晶圓11的工作夾台4。 Specifically, first, a holding step of holding the two-layer structure wafer 11 by the working chuck of the cutting device is performed. Fig. 2(A) is a side view for explaining a holding step and a subsequent contour calculating step. As shown in FIG. 2(A), the cutting device 2 used in the present embodiment is provided with a work chuck 4 that sucks and holds the two-layer structure wafer 11.
此工作夾台4是與馬達等的旋轉驅動源(圖未示)連結，且繞著與鉛直方向平行的旋轉軸旋轉。又，在工作夾台4的下方設有移動單元(圖未示)，且工作夾台4是利用此移動單元而在水平方向上移動。 The work chuck 4 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis parallel to the vertical direction. Further, a moving unit (not shown) is provided below the work chuck 4, and the work chuck 4 is moved in the horizontal direction by the moving unit.
工作夾台4的上表面是形成為吸引保持上述二層構造晶圓11的保持面4a。在這個保持面4a上，是通過形成於工作夾台4之內部的流路(圖未示)來使吸引源(圖未示)的負壓產生作用。 The upper surface of the work chuck 4 is a holding surface 4a formed to suck and hold the two-layer structure wafer 11. On this holding surface 4a, a negative pressure of a suction source (not shown) acts by a flow path (not shown) formed inside the working chuck 4.
在保持步驟中，首先是以使第2晶圓31的背面31b側接觸於工作夾台4的保持面4a的形式來將二層構造晶圓11載置在工作夾台4上。在此狀態下，只要使吸引源的負壓 作用在保持面4a上，就可將二層構造晶圓11吸引保持在工作夾台4上。 In the holding step, first, the two-layer structure wafer 11 is placed on the work chuck 4 such that the back surface 31b side of the second wafer 31 is in contact with the holding surface 4a of the work chuck 4. In this state, as long as the suction pressure of the suction source The two-layer structure wafer 11 can be attracted and held on the work chuck 4 by acting on the holding surface 4a.
在保持步驟之後，實施算出第2晶圓31之輪廓的輪廓算出步驟。圖2(B)是用於說明輪廓算出步驟的平面圖。在如上所述地第1晶圓21及第2晶圓31的中心出現偏差的狀態下，會如圖2(B)所示，使第2晶圓31之表面31a的一部分與第1晶圓21之背面21b一起朝上方露出。 After the holding step, a contour calculating step of calculating the contour of the second wafer 31 is performed. Fig. 2(B) is a plan view for explaining the outline calculation step. In a state where the centers of the first wafer 21 and the second wafer 31 are different as described above, a part of the surface 31a of the second wafer 31 and the first wafer are formed as shown in FIG. 2(B). The back side 21b of 21 is exposed upwards together.
在輪廓算出步驟中，是藉由拍攝該露出的區域而算出第2晶圓31的輪廓。如圖2(A)所示，在工作夾台4的上方配置有照相機(攝像機構)6。藉由將照相機6定位在第2晶圓31之外周緣31c的上方且使工作夾台4旋轉，可以如圖2(B)所示，拍攝使第2晶圓31之表面31a露出的區域A。 In the contour calculation step, the outline of the second wafer 31 is calculated by photographing the exposed region. As shown in FIG. 2(A), a camera (image pickup mechanism) 6 is disposed above the work chuck 4. By positioning the camera 6 above the outer periphery 31c of the second wafer 31 and rotating the work chuck 4, the area A where the surface 31a of the second wafer 31 is exposed can be imaged as shown in Fig. 2(B). .
已拍攝了使第2晶圓31之表面31a露出的區域A之後，根據所形成的拍攝影像，抽取(檢測)第2晶圓31之外周緣31c上的至少3點的座標。例如，如圖2(B)所示，可以根據拍攝區域A的拍攝影像而抽取出外周緣31c上之點P1、P2、P3的座標。 After the area A in which the surface 31a of the second wafer 31 is exposed is imaged, at least three points on the outer peripheral edge 31c of the second wafer 31 are extracted (detected) based on the formed captured image. For example, as shown in FIG. 2(B), the coordinates of the points P1, P2, and P3 on the outer peripheral edge 31c can be extracted based on the captured image of the imaging area A.
然後，根據所抽取出的3個點P1、P2、P3的座標，算出第2晶圓31的輪廓(亦即外周緣31c)。因為第2晶圓31的輪廓大致為圓形，所以根據所抽取出的至少3個點P1、P2、P3的座標，就能求出第2晶圓31的輪廓。 Then, the contour of the second wafer 31 (that is, the outer peripheral edge 31c) is calculated from the coordinates of the extracted three points P1, P2, and P3. Since the outline of the second wafer 31 is substantially circular, the contour of the second wafer 31 can be obtained from the coordinates of the extracted at least three points P1, P2, and P3.
在輪廓算出步驟之後，實施去除第1晶圓21之倒角部的倒角去除步驟。圖3(A)是用於說明倒角部去除步驟的側面圖。如圖3(A)所示，切削裝置2具備有切削去除第1 晶圓21的倒角部的切削單元8。切削單元8包含繞著大致水平之旋轉軸旋轉的切削刀10。 After the contour calculation step, a chamfer removal step of removing the chamfered portion of the first wafer 21 is performed. Fig. 3(A) is a side view for explaining a step of removing the chamfered portion. As shown in FIG. 3(A), the cutting device 2 is provided with cutting removal first. The cutting unit 8 of the chamfered portion of the wafer 21. The cutting unit 8 includes a cutting blade 10 that rotates about a generally horizontal axis of rotation.
在倒角部去除步驟中，首先是將切削刀10定位在第2晶圓31的外周緣31c的上方。其次，分別使工作夾台4及切削刀10旋轉，而使切削刀10切入第1晶圓21。在此，切削刀10的切入位置是配合在輪廓算出步驟中所算出的第2晶圓31之輪廓而被調整。 In the chamfering portion removing step, first, the cutting blade 10 is positioned above the outer peripheral edge 31c of the second wafer 31. Next, the work chuck 4 and the cutting blade 10 are respectively rotated, and the cutting blade 10 is cut into the first wafer 21. Here, the cutting position of the cutting blade 10 is adjusted in accordance with the contour of the second wafer 31 calculated in the contour calculating step.
藉此，就能沿著第2晶圓31的外周緣31c環狀地切削第1晶圓21的外周緣21c，而去除第1晶圓21的倒角部。圖3(B)是模式地顯示已去除第1晶圓21之倒角部的二層構造晶圓11的側面圖。 Thereby, the outer peripheral edge 21c of the first wafer 21 can be annularly cut along the outer peripheral edge 31c of the second wafer 31, and the chamfered portion of the first wafer 21 can be removed. FIG. 3(B) is a side view schematically showing the two-layer structure wafer 11 from which the chamfered portion of the first wafer 21 has been removed.
本實施形態的倒角部去除步驟中，由於是沿著第2晶圓31的外周緣31c以去除第1晶圓21的倒角部，所以如圖3(B)所示，已去除倒角部的第1晶圓21的中心會與第2晶圓31的中心形成一致。 In the chamfered portion removing step of the present embodiment, since the chamfered portion of the first wafer 21 is removed along the outer peripheral edge 31c of the second wafer 31, the chamfering has been removed as shown in FIG. 3(B). The center of the first wafer 21 of the portion is aligned with the center of the second wafer 31.
在倒角部去除步驟之後，實施磨削第1晶圓21以薄化至預定的厚度之磨削步驟。圖4(A)是用於說明磨削步驟的側面圖。如圖4(A)所示，在本實施形態中所使用的磨削裝置22具備有吸引保持二層構造晶圓11的工作夾台24。 After the chamfering portion removing step, a grinding step of grinding the first wafer 21 to a predetermined thickness is performed. Fig. 4 (A) is a side view for explaining a grinding step. As shown in FIG. 4(A), the grinding apparatus 22 used in the present embodiment is provided with a work chuck 24 that sucks and holds the two-layer structure wafer 11.
此工作夾台24是與馬達等的旋轉驅動源(圖未示)連結，且繞著與鉛直方向平行的旋轉軸旋轉。又，在工作夾台24的下方設有移動單元(圖未示)，且工作夾台24是利用此移動單元而在水平方向上移動。 The work chuck 24 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis parallel to the vertical direction. Further, a moving unit (not shown) is provided below the work chuck 24, and the work chuck 24 is moved in the horizontal direction by the moving unit.
工作夾台24的上表面是形成為吸引保持上述二 層構造晶圓11的保持面24a。在這個保持面24a上，是通過形成於工作夾台4之內部的流路(圖未示)來使吸引源(圖未示)的負壓產生作用。 The upper surface of the work clamping table 24 is formed to attract and hold the above two The holding surface 24a of the wafer 11 is layered. On this holding surface 24a, a negative pressure of a suction source (not shown) acts by a flow path (not shown) formed inside the working chuck 4.
在工作夾台24的上方配置有磨削二層構造晶圓11的磨削單元26。磨削單元26具備有構成旋轉軸的主軸28。在主軸28的下端部(前端部)上設有圓盤狀的輪座30。 A grinding unit 26 that grinds the two-layer structure wafer 11 is disposed above the work chuck 24 . The grinding unit 26 is provided with a main shaft 28 constituting a rotating shaft. A disc-shaped wheel base 30 is provided at a lower end portion (front end portion) of the main shaft 28.
輪座30的下表面裝設有與輪座30為大致相同直徑的磨削輪32。磨削輪32具備有以不銹鋼、鋁等金屬材料所形成的輪基台34。在輪基台34之下表面，是將複數個磨削磨石36固定成環狀。 The lower surface of the wheel base 30 is provided with a grinding wheel 32 having substantially the same diameter as the wheel base 30. The grinding wheel 32 is provided with a wheel base 34 formed of a metal material such as stainless steel or aluminum. On the lower surface of the wheel base 34, a plurality of grinding stones 36 are fixed in a ring shape.
在主軸28的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。磨削輪32是藉由從這個旋轉驅動源所傳達的旋轉力而繞著與鉛直方向平行的旋轉軸旋轉。 A rotary drive source (not shown) such as a motor is coupled to the upper end side (base end side) of the main shaft 28. The grinding wheel 32 is rotated about a rotation axis parallel to the vertical direction by a rotational force transmitted from this rotational drive source.
在磨削步驟中，首先，是以使第1晶圓21的背面21b側朝上方露出的形式來使二層構造晶圓11吸引保持在工作夾台24上。其次，使工作夾台24及主軸28旋轉並且使磨削盤32下降，且一邊供給純水等的磨削液一邊使磨削磨石36的下表面接觸第1晶圓21的背面21b。 In the grinding step, first, the two-layer structure wafer 11 is sucked and held on the work chuck 24 in such a manner that the back surface 21b side of the first wafer 21 is exposed upward. Then, the work chuck 24 and the main shaft 28 are rotated and the grinding disc 32 is lowered, and the lower surface of the grinding grindstone 36 is brought into contact with the back surface 21b of the first wafer 21 while supplying the grinding liquid such as pure water.
藉此，就可以磨削背面21b側而薄化第1晶圓21。圖4(B)是模式地顯示已將第1晶圓21薄化的二層構造晶圓11的側面圖。如圖4(B)所示，一旦將第1晶圓21薄化至預先設定的預定的厚度時，即結束磨削步驟。 Thereby, the first wafer 21 can be thinned by grinding the back surface 21b side. FIG. 4(B) is a side view schematically showing the two-layer structure wafer 11 in which the first wafer 21 has been thinned. As shown in FIG. 4(B), when the first wafer 21 is thinned to a predetermined thickness set in advance, the grinding step is ended.
如上所述，由於本實施形態的二層構造晶圓的加工方法包含從第1晶圓21側拍攝使第2晶圓31之表面31a露 出的區域，而算出第2晶圓31的輪廓之輪廓算出步驟、和沿著第2晶圓31的外周緣31c切削第1晶圓21的外周緣21c，而以使第1晶圓21的中心與第2晶圓31的中心形成一致的方式來去除第1晶圓21的倒角部的倒角部去除步驟，所以能夠消除晶圓的中心之偏差。 As described above, the method for processing a two-layer structure wafer according to the present embodiment includes photographing the surface 31a of the second wafer 31 from the side of the first wafer 21 In the region to be extracted, the outline calculation step of the outline of the second wafer 31 is calculated, and the outer peripheral edge 21c of the first wafer 21 is cut along the outer peripheral edge 31c of the second wafer 31 so that the first wafer 21 is formed. Since the center and the center of the second wafer 31 are aligned to remove the chamfered portion removing step of the chamfered portion of the first wafer 21, the variation in the center of the wafer can be eliminated.
再者，上述實施形態之構成、方法等，只要在不脫離本發明的目的之範圍內，皆可適當變更而實施。 In addition, the configuration, the method, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.
11‧‧‧二層構造晶圓 11‧‧‧Two-layer structured wafer
2‧‧‧切削裝置 2‧‧‧Cutting device
21‧‧‧第1晶圓 21‧‧‧1st wafer
21a、31a‧‧‧表面 21a, 31a‧‧‧ surface
21b、31b‧‧‧背面 21b, 31b‧‧‧ back
21c、31c‧‧‧外周緣 21c, 31c‧‧‧ outer periphery
31‧‧‧第2晶圓 31‧‧‧2nd wafer
4‧‧‧工作夾台 4‧‧‧Working table
4a‧‧‧保持面 4a‧‧‧ Keep face
6‧‧‧照相機(攝像手段) 6‧‧‧ camera (camera means)
P1、P2、P3‧‧‧點 P1, P2, P3‧‧ points
A‧‧‧區域 A‧‧‧ area
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| KR20210005110A (en) * | 2018-04-27 | 2021-01-13 | 도쿄엘렉트론가부시키가이샤 | Substrate processing system and substrate processing method |
| JP7187112B2 (en) * | 2018-08-13 | 2022-12-12 | 株式会社ディスコ | Carrier plate removal method |
| JP7222636B2 (en) * | 2018-09-12 | 2023-02-15 | 株式会社ディスコ | Edge trimming device |
| JP7157816B2 (en) * | 2018-10-23 | 2022-10-20 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| JP2024041253A (en) | 2022-09-14 | 2024-03-27 | 株式会社ディスコ | Wafer processing method and processing equipment |
| JP2024051279A (en) | 2022-09-30 | 2024-04-11 | 株式会社ディスコ | Wafer processing method and processing device |
| JP2024064517A (en) | 2022-10-28 | 2024-05-14 | 株式会社ディスコ | Wafer processing method |
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| JP4440808B2 (en) * | 2005-03-10 | 2010-03-24 | 信越半導体株式会社 | Perimeter grinding apparatus and bonded substrate grinding method |
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