JP2003117818A - Method and device for grinding substrate - Google Patents

Method and device for grinding substrate

Info

Publication number
JP2003117818A
JP2003117818A JP2001312925A JP2001312925A JP2003117818A JP 2003117818 A JP2003117818 A JP 2003117818A JP 2001312925 A JP2001312925 A JP 2001312925A JP 2001312925 A JP2001312925 A JP 2001312925A JP 2003117818 A JP2003117818 A JP 2003117818A
Authority
JP
Japan
Prior art keywords
grinding
substrate
wheel type
cup wheel
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001312925A
Other languages
Japanese (ja)
Inventor
Satoru Ide
悟 井出
Hiroaki Kida
浩章 喜田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okamoto Machine Tool Works Ltd
Original Assignee
Okamoto Machine Tool Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okamoto Machine Tool Works Ltd filed Critical Okamoto Machine Tool Works Ltd
Priority to JP2001312925A priority Critical patent/JP2003117818A/en
Publication of JP2003117818A publication Critical patent/JP2003117818A/en
Pending legal-status Critical Current

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Landscapes

  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for grinding a substrate capable of preventing the substrate from being broken by solving such a problem with a substrate having a diameter of as large as 300 mm or more that grinding waste penetrates into a clearance between a film and a device pattern face together with grinding fluid and the substrate is broken. SOLUTION: When the rear surface of the substrate is ground by slidably moving a cup wheel type grinding wheel on the surface of the substrate by using a grinding device having the cup wheel type grinding wheel 50 and a grinding fluid feeding mechanism 59, fluid adhered to the blade tip 55 of the cup wheel type grinding wheel apart from the surface of the substrate is removed by allowing the blade tip 55 to pass through the inside of the groove of a fluid cutting board 90 installed on the outside of a chuck 4. Since the grinding fluid adhered to the blade tip is removed by the fluid cutting board 90, the possibility of presence of the grinding waste between the film and the device pattern face in a grinding system can be eliminated to prevent the substrate from being broken.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、シリコンウエハ、
ゲルマニウムウエハ、アルミニウムウエハ、ガラス基板
等の半導体基板を研削するのに適した平面研削装置およ
び半導体基板表面の研削方法に関する。
TECHNICAL FIELD The present invention relates to a silicon wafer,
The present invention relates to a surface grinding apparatus suitable for grinding a semiconductor substrate such as a germanium wafer, an aluminum wafer, and a glass substrate, and a method for grinding the surface of a semiconductor substrate.

【従来の技術】半導体基板の研削には、基板のチャック
機構とスピンドルに軸承されたカップホイ−ル型砥石お
よび研削液供給機構を備える平面研削装置が使用されて
いる(特開平2−274462号、同3−154773
号、同11−254318号、特開2000−9434
2号公報)。
2. Description of the Related Art For grinding a semiconductor substrate, a surface grinding machine having a substrate chuck mechanism, a cup wheel type grindstone supported by a spindle, and a grinding liquid supply mechanism is used (Japanese Patent Laid-Open No. 2-274462). Same as 3-154773
No. 11-254318, JP-A-2000-9434.
No. 2).

【0002】かかる平面研削装置の一例として、例え
ば、図6に示す平面研削装置が挙げられる(特開平11
−254318号公報)。図中、1は平面研削装置、A
は本体基台、2は回転軸、3はウエハ(基板)、4はチ
ャック、5はカップホイ−ル型砥石、6は本体ケ−シン
グ、7は昇降装置、8はスピンドル、9は軸受、10は
スピンドルケ−シング、11はカップホイ−ル型砥石を
取り付けるヘッド、12はスピンドルケ−シングを昇降
機構に据え付ける取付部材、13は後述する傾斜調整ボ
ルト駆動用モ−タ−、14はスピンドル軸を回転駆動さ
せるビルド・イン・モ−タ−、15はX軸方向の傾斜調
整ボルト、15aは皿バネ、15'はY軸方向の傾斜調
整ボルト、16は昇降装置を垂直方向に昇降可能とする
凹状溝を有するレ−ル、18はスピンドル軸ケ−シング
に設けられた半球状凸部、19は昇降装置の前面に前記
半球状凸部と若干の隙間を持って嵌合できるように形成
された半球状凹部、21はロッド、22は空気軸受であ
る。
An example of such a surface grinding apparatus is a surface grinding apparatus shown in FIG.
-254318). In the figure, 1 is a surface grinding machine, A
Is a main body base, 2 is a rotation axis, 3 is a wafer (substrate), 4 is a chuck, 5 is a cup wheel type grindstone, 6 is a body casing, 7 is a lifting device, 8 is a spindle, 9 is a bearing, and 10 is a bearing. Is a spindle casing, 11 is a head for mounting a cup wheel type grindstone, 12 is a mounting member for mounting the spindle casing on an elevating mechanism, 13 is a motor for driving a tilt adjusting bolt described later, and 14 is a spindle shaft. A built-in motor driven to rotate, 15 is an X-axis tilt adjustment bolt, 15a is a disc spring, 15 'is a Y-axis tilt adjustment bolt, and 16 is a vertical movement device. A rail having a concave groove, 18 is a hemispherical convex portion provided on the spindle shaft casing, and 19 is formed so that it can be fitted on the front surface of the elevating device with a slight gap with the hemispherical convex portion. Hemispherical recess, 1 rod, 22 is an air bearing.

【0003】研削テ−ブル4上に載せられたウエハ3の
表面にスピンドル8を昇降装置により下降させてカップ
ホイ−ル型砥石をウエハ面に圧接し、両スピンドル軸
2,8を同一方向または逆方向に回転させることにより
ウエハ表面に砥石を摺動させてウエハ表面を研削する。
A spindle 8 is lowered by an elevating device onto the surface of the wafer 3 placed on the grinding table 4 to press a cup wheel type grindstone against the wafer surface, and both spindle shafts 2 and 8 are moved in the same direction or in the reverse direction. The wafer is ground by sliding a grindstone on the wafer surface by rotating the wafer in the direction.

【0004】カップホイ−ル型砥石5としては、図7に
示す環状の周壁5aと、その一端に設けられた底壁5b
とを備えたカップ状台金の前記周壁の底壁とは反対面の
上面に扇状の砥石小片(刃先)5dを環状に接着剤で隣
接する砥石小片5d,5d間に研削液の流通するスリッ
ト5fを形成させるようにして固定したカップホイ−ル
型砥石(実開昭61−144959号、同61−144
961号、同61−144962号、特開昭62−18
1875号公報)が使用されている。前記砥石小片は、
高さが3〜7mm、幅が3〜10mm、長さが3〜7m
mの環状扇体であるのが一般である。
As the cup wheel type grindstone 5, an annular peripheral wall 5a shown in FIG. 7 and a bottom wall 5b provided at one end thereof.
A fan-shaped grindstone piece (blade edge) 5d is annularly formed on the upper surface of the cup-shaped base metal opposite to the bottom wall of the cup-shaped base metal with an adhesive so that a grinding fluid flows between the grindstone pieces 5d and 5d. Cup wheel type grinding wheel fixed so as to form 5f (No. 61-144959, No. 61-144)
961, 61-149,962, JP-A-62-18
1875). The grindstone pieces are
Height 3-7mm, width 3-10mm, length 3-7m
It is generally an annular fan of m.

【0005】また、特開2000−94342号公報に
開示されるように、環状の周壁と、その一端に設けられ
た底壁とを備えたカップ状台金の前記周壁の底壁とは反
対面の上面に環状砥石を固定したカップホイ−ル型砥石
であって、前記台金は底壁の外面に周壁と同心に設けら
れた環状溝(a)と該環状溝内に供給される研削液を周
壁の内側へ導入するために該環状溝の底面から前記底壁
を貫通して設けられ、該周壁の他端側へ向かう程度外周
側へ傾斜して、かつ、周壁に同心に多数等間隔に設けら
れた研削液導入孔(b)を有し、底壁とは反対面の周壁
の上面に固定された環状の砥石は周壁の頂面より突出し
ている部分において周壁および環状溝が共有する軸心と
該軸心に直交する環状砥石の起立面に対し、軸心側から
砥石外側に向かって30〜60度傾斜した研削液排出用
スリット(c)が多数等間隔に設けられているカップホ
イ−ル型砥石も使用されている。
Further, as disclosed in Japanese Patent Application Laid-Open No. 2000-94342, a surface of a cup-shaped base metal having an annular peripheral wall and a bottom wall provided at one end of the cup-shaped base metal is opposite to the bottom wall of the peripheral wall. Is a cup-wheel type grindstone in which an annular grindstone is fixed to the upper surface of the base metal, and the base metal includes an annular groove (a) provided concentrically with the peripheral wall on the outer surface of the bottom wall and a grinding liquid supplied into the annular groove. It is provided so as to penetrate the bottom wall from the bottom surface of the annular groove so as to be introduced into the inner side of the peripheral wall, is inclined toward the outer peripheral side toward the other end side of the peripheral wall, and is equidistant from the peripheral wall at many equal intervals. An annular grindstone having a grinding fluid introduction hole (b) provided and fixed to the upper surface of the peripheral wall opposite to the bottom wall is a shaft shared by the peripheral wall and the annular groove in a portion protruding from the top surface of the peripheral wall. With respect to the upright surface of the circular grindstone that is orthogonal to the axis and the axis, face the outer side of the wheel from the axis side. 30 to 60 degrees inclined grinding liquid discharge slit (c) is provided in a number equal intervals Kappuhoi - and Le grinding wheel also be used.

【0006】このカップホイ−ル型砥石において、スリ
ットの高さが3〜10mmであり、砥石幅2〜7mm、
スリットで区分けされた砥石刃の長さが10〜50mm
である。研削液導入孔の径は2〜6mm、周壁高さは2
5〜45mmである。
In this cup wheel type grindstone, the height of the slit is 3 to 10 mm, the grindstone width is 2 to 7 mm,
Length of grindstone blade divided by slit is 10-50mm
Is. The diameter of the grinding fluid introduction hole is 2 to 6 mm, and the peripheral wall height is 2
It is 5 to 45 mm.

【0007】図5に示す研削装置は、後者のカップホイ
−ル型砥石を備えた研削装置1の砥石ヘッド構造を示す
ものである。
The grinding machine shown in FIG. 5 shows a grindstone head structure of a grinding machine 1 equipped with the latter cup wheel type grindstone.

【0008】図5に示す平面研削装置のヘッド構造にお
いて、6は本体ケ−シング、8はスピンドル軸、9は軸
受、11はカップホイ−ル型砥石の取付板、12はスピ
ンドル軸ケ−シング取付部材、13は傾斜調整ボルト駆
動用モ−タ−、14はスピンドル軸を回転駆動させるビ
ルド・イン・モ−タ−、22は空気軸受、23は空気供
給管、24は取付板11とスピンドル軸を軸承する固定
板25との連結軸、26はスピンドル軸ケ−シング10
冷却液供給管、27は空気軸受22と該空気軸受の周壁
下に設けた囲板(砥石カバ−)28とからなるヘッドH
内に設けられた空間部、50はカップホイ−ル型砥石、
51は周壁、52は底壁、53はカップ状台金、55は
砥石、56は環状溝、57は研削液導入孔、59は研削
液供給ノズル、60は研削液供給管、61は研削液取入
口であり、この研削液供給管は図示されていないが、昇
降機構の取付部材に固定されており、研削液タンクと可
撓性ホ−スで接続されている。
In the head structure of the surface grinding apparatus shown in FIG. 5, 6 is a main body casing, 8 is a spindle shaft, 9 is a bearing, 11 is a cup wheel type grindstone mounting plate, and 12 is a spindle shaft casing mounting. Reference numeral 13 is a motor for driving the tilt adjusting bolt, 14 is a build-in motor for rotationally driving the spindle shaft, 22 is an air bearing, 23 is an air supply pipe, 24 is a mounting plate 11 and a spindle shaft. A connecting shaft with a fixed plate 25 for supporting the spindle shaft 26 is a spindle shaft casing 10.
A cooling liquid supply pipe 27 is a head H composed of an air bearing 22 and a surrounding plate (grinding wheel cover) 28 provided below the peripheral wall of the air bearing 22.
A space provided inside, 50 is a cup wheel type grindstone,
51 is a peripheral wall, 52 is a bottom wall, 53 is a cup-shaped base metal, 55 is a grindstone, 56 is an annular groove, 57 is a grinding liquid introduction hole, 59 is a grinding liquid supply nozzle, 60 is a grinding liquid supply pipe, and 61 is a grinding liquid. Although not shown, this grinding fluid supply pipe is an intake port, is fixed to a mounting member of the lifting mechanism, and is connected to the grinding fluid tank by a flexible hose.

【0009】カップホイ−ル型砥石50は、ビルド・イ
ン・モ−タ−14の回転駆動をスピンドル軸8、固定板
25、連結軸24、取付板11を経て伝達し、回転させ
る。ヘッドは取付部材12に固定されているので砥石5
0が回転しても、ヘッド自信は回転駆動しない。従っ
て、研削液供給ノズル59と研削液供給タンクを連結す
る可撓性ホ−スが捻れて破損することはない。研削液供
給ノズル59より砥石50の環状溝56に供給された研
削液は、導入孔57,57…を経て砥石周壁内56面に
導かれ、さらにスリット50fを通過して砥石の周壁外
側へ排出される。
The cup wheel type grindstone 50 transmits the rotational drive of the build-in motor 14 through the spindle shaft 8, the fixed plate 25, the connecting shaft 24, and the mounting plate 11 to rotate it. Since the head is fixed to the mounting member 12, the grindstone 5
Even if 0 rotates, the head confidence does not rotate. Therefore, the flexible hose connecting the grinding fluid supply nozzle 59 and the grinding fluid supply tank is not twisted and damaged. The grinding fluid supplied from the grinding fluid supply nozzle 59 to the annular groove 56 of the grindstone 50 is guided to the inner surface 56 of the grindstone circumferential wall through the introduction holes 57, 57, and further passes through the slit 50f and is discharged to the outer side of the grindstone circumferential wall. To be done.

【0010】カップホイ−ル型砥石50の刃先55群の
直径rは基板の半径より4/3〜2倍と大きく、カップ
ホイ−ル型砥石の刃先が前記基板の略中心点を通過する
ようにスピンドル8を回転させる。基板の研削は、前記
チャック4に保持された基板を水平方向に回転させつ
つ、研削液を基板表面に供給しつつカップホイ−ル型砥
石を該砥石の刃先55が前記基板の略中心点oを通過す
るようにスピンドルを回転させてカップホイ−ル型砥石
を基板面上で摺動させて基板表面を研削する。
The diameter r of the blade edge group 55 of the cup wheel type grindstone 50 is 4/3 to 2 times larger than the radius of the substrate, and the spindle is set so that the blade edge of the cup wheel type grindstone passes substantially the center point of the substrate. Rotate 8. To grind the substrate, while rotating the substrate held by the chuck 4 in the horizontal direction and supplying a grinding liquid to the surface of the substrate, the blade edge 55 of the cup wheel type grindstone moves the substantially central point o of the substrate. The spindle is rotated so as to pass, and the cup wheel type grindstone is slid on the substrate surface to grind the substrate surface.

【0011】図4に示すように、直径が300mm、4
00mm、表面にデバイスパタ−ン3aが設けられ、こ
のデバイスパタ−ンにダイサ−切り込み溝3bが設けら
れた半導体基板の裏面研削は、デバイスパタ−ン表面を
保護フィルム(粘着テ−プ)80で覆い、保護フィルム
80がチャック面に接するように、かつ、基板裏面3c
がカップホイ−ル型砥石55(5)に対向するように半
導体基板3をチャック4上に載置し、カップホイ−ル型
砥石による基板の裏面研削が行なわれる。
As shown in FIG. 4, the diameter is 300 mm, 4
00 mm, the device pattern 3a is provided on the front surface, and the back surface grinding of the semiconductor substrate having the dicer cut groove 3b provided on the device pattern is performed by protecting the surface of the device pattern with a protective film (adhesive tape) 80. With the protective film 80 in contact with the chuck surface, and the back surface 3c of the substrate.
The semiconductor substrate 3 is placed on the chuck 4 so as to face the cup wheel type grindstone 55 (5), and the back surface of the substrate is ground by the cup wheel type grindstone.

【0012】[0012]

【発明が解決しようとする課題】ベアシリコンの研削
や、直径が200mm以下の半導体基板では、研削に問
題がなかったが、基板径が300mm以上と拡径した半
導体基板では、保護フィルム80と半導体基板3のデバ
イスパタ−ン3a間に研削屑を含んだ研削液が浸入し、
研削屑が悪さを働いて裏面研削時に、または研削後の基
板搬送時に半導体基板3が割れてしまう現象が稀に生じ
ることが判明した。
There was no problem in grinding bare silicon or in a semiconductor substrate having a diameter of 200 mm or less, but in a semiconductor substrate having a substrate diameter of 300 mm or more, the protective film 80 and semiconductor The grinding fluid containing grinding dust enters between the device patterns 3a of the substrate 3,
It has been found that a phenomenon in which the semiconductor chips 3 are broken due to the grinding dust working badly during the back surface grinding or during the transportation of the substrate after grinding rarely occurs.

【0013】この割れの原因は、半導体基板の端部(エ
ッジ部)3dが丸みを帯びた尖りを有しており、研削時
に保護フィルム80の端部が基板のデバイスパタ−ン3
a面より剥離し、保護フィルム80と半導体基板3のデ
バイスパタ−ン3a間に研削屑を含んだ研削液が浸入
し、ダイサ−溝3bを通って研削液が浸透し、特に、研
削屑がデバイスパタ−ンのダイサ−溝3bに留まった際
は、ヘッドHより半導体基板にかかる圧力が研削屑に集
中し、基板の強度の弱いダイサ−溝3b部に外部応力が
作用するため、半導体基板の割れに繋がるものと思われ
る。
The cause of this crack is that the end portion (edge portion) 3d of the semiconductor substrate has a rounded sharp point, and the end portion of the protective film 80 during grinding is the device pattern 3 of the substrate.
When peeled from the surface a, the grinding liquid containing grinding dust penetrates between the protective film 80 and the device pattern 3a of the semiconductor substrate 3, and the grinding liquid penetrates through the dicer groove 3b. When remaining in the dicer groove 3b of the device pattern, the pressure applied to the semiconductor substrate from the head H concentrates on the grinding dust, and external stress acts on the dicer groove 3b portion of the substrate, which is weak in strength. It seems that this will lead to cracking.

【0014】本発明は、径が大きい半導体基板の裏面研
削であっても、かかる基板の割れを生じることが無い基
板の研削方法およびそれに用いる研削装置の提供を目的
とする。
It is an object of the present invention to provide a substrate grinding method and a grinding apparatus used therefor, which do not cause such cracking of the substrate even in the case of backside grinding of a semiconductor substrate having a large diameter.

【0015】[0015]

【課題を解決するための手段】本発明の請求項1は、基
板を保持するチャックと、スピンドルに軸承された基板
の半径よりも大きい直径を有するカップホイ−ル型砥石
と、研削液供給機構を備える研削装置を用い、前記チャ
ックに保持された基板を水平方向に回転させつつ、研削
液を基板表面に供給しつつカップホイ−ル型砥石を該砥
石の刃先が前記基板の略中心点を通過するようにスピン
ドルを回転させてカップホイ−ル型砥石を基板面上で摺
動させて基板表面を研削する方法において、基板面より
離れたカップホイ−ル型砥石の刃先をチャック外に設け
た液切り堰の溝内を通過させて刃先に付着した液体を除
去することを特徴とする、基板の研削方法を提供するも
のである。
According to a first aspect of the present invention, there is provided a chuck for holding a substrate, a cup wheel type grindstone having a diameter larger than a radius of the substrate supported by a spindle, and a grinding fluid supply mechanism. Using a grinding device provided, while rotating the substrate held by the chuck in the horizontal direction, while supplying the grinding liquid to the substrate surface, the blade edge of the cup wheel type grinding stone passes the substantially central point of the substrate. In the method of grinding the substrate surface by rotating the spindle in such a manner that the cup wheel type grinding stone slides on the substrate surface, the cutting edge of the cup wheel type grinding stone separated from the substrate surface is provided outside the chuck. The present invention provides a method for grinding a substrate, which is characterized in that the liquid adhering to the blade edge is removed by passing through the groove.

【0016】液切り堰の溝内をカップホイ−ル型砥石の
刃先が通過する際、高速で回転している刃先に付着して
いる研削液等の液体は、液切り堰の溝と刃先の隙間が狭
いので液切りされるとともに、研削液中に含有された研
削屑は液切り堰に当接して飛ばされるので、再び刃先が
研削系に戻る際には刃先には研削屑が付着していない。
よって、保護フィルム80と半導体基板3のデバイスパ
タ−ン3a間に研削屑が浸透する機会が失なわれるの
で、半導体基板3が割れることはない。
When the cutting edge of the cup wheel type grindstone passes through the groove of the liquid cutting weir, the liquid such as the grinding liquid adhering to the cutting edge rotating at a high speed is a gap between the groove of the liquid cutting weir and the cutting edge. Since it is drained, the grinding dust contained in the grinding fluid comes into contact with the liquid cutting weir and is blown away, so when the blade tip returns to the grinding system, no grinding dust is attached to the blade tip. .
Therefore, the opportunity for grinding dust to penetrate between the protective film 80 and the device pattern 3a of the semiconductor substrate 3 is lost, so that the semiconductor substrate 3 is not cracked.

【0017】本発明の請求項2は、前記の基板の研削方
法において、液切り堰の溝は、該溝の側壁がカップホイ
−ル型砥石の刃先の側面より10〜1000μm、溝の
底部が刃先の下面より10〜1000μm離れている寸
法であることを特徴とする。
According to a second aspect of the present invention, in the method for grinding a substrate described above, the groove of the liquid draining weir has a side wall of the groove of 10 to 1000 μm from a side surface of a cutting edge of a cup wheel type grinding stone, and a bottom of the groove has a cutting edge. It is characterized in that it is 10 to 1000 μm away from the lower surface of the.

【0018】液の表面張力と、カップホイ−ル型砥石の
回転数から考慮して、研削屑が液切り堰の溝を通過しな
い溝と刃先との隙間距離である。
Considering the surface tension of the liquid and the number of rotations of the cup wheel type grindstone, this is the gap distance between the groove and the cutting edge where the grinding dust does not pass through the groove of the liquid cutting weir.

【0019】本発明の請求項3は、基板を保持するチャ
ック、該チャックの回転機構、スピンドルに軸承された
基板の半径よりも大きい直径を有するカップホイ−ル型
砥石、該スピンドルの回転機構ならびに昇降機構、研削
液供給機構、およびカップホイ−ル型砥石の刃先に付着
した液体を除去する液切り堰を備える研削装置を提供す
るものである。
According to a third aspect of the present invention, a chuck for holding a substrate, a rotating mechanism of the chuck, a cup wheel type grindstone having a diameter larger than a radius of a substrate supported by a spindle, a rotating mechanism of the spindle, and a lifting mechanism. A grinding device provided with a mechanism, a grinding liquid supply mechanism, and a liquid cutting weir for removing the liquid adhering to the blade edge of a cup wheel type grindstone.

【0020】スピンドルに軸承された基板の半径よりも
大きい直径を有するカップホイ−ル型砥石を用いるの
で、液切り堰をチャックの外側に設けることができる。
Since the cup wheel type grindstone having a diameter larger than the radius of the substrate supported by the spindle is used, the liquid draining weir can be provided outside the chuck.

【0021】[0021]

【発明の実施の形態】以下、図面を用いて本発明をさら
に詳細に説明する。図1は、砥石カバ−に設けた支持部
材に液切り堰を設けた研削装置の部分正面図、図2は、
研削装置のカップホイ−ル型砥石の刃先回転方向と、基
板の回転方向と研削液供給位置と、液切り堰の位置の相
対関係を示す平面図、図3は、液切り堰の斜視図、図4
は、チャック上に載置された半導体基板とカップホイ−
ル型砥石と、液切り堰と、研削液供給機構の位置関係を
示す部分正面図である。
BEST MODE FOR CARRYING OUT THE INVENTION The present invention will be described in more detail below with reference to the drawings. FIG. 1 is a partial front view of a grinding device in which a liquid cutting weir is provided in a support member provided in a grindstone cover, and FIG.
FIG. 3 is a perspective view of a liquid cutting weir, and FIG. 3 is a perspective view showing the relative relationship among the blade tip rotation direction of the cup wheel type grinding stone of the grinding device, the substrate rotation direction, the grinding liquid supply position, and the position of the liquid cutting weir. Four
Is a semiconductor substrate mounted on the chuck and a cup wheel.
It is a partial front view which shows the positional relationship of a grinding wheel, a liquid cutting weir, and a grinding fluid supply mechanism.

【0022】カップホイ−ル型砥石:カップホイ−ル型
砥石は、前述の実開昭61−144959号、同61−
144961号、同61−144962号、特開昭62
−181875号、特開2000−94342号公報に
記載のカップホイ−ル型砥石を含め、公知のカップホイ
−ル型砥石を用いることができる。カップホイ−ル型砥
石は、株式会社 岡本工作機械製作所、旭ダイアモンド
株式会社、三菱マテリアル株式会社から入手できる。
Cup-wheel type grindstone: The cup-wheel type grindstone is the same as the above-mentioned No. 61-144959, Ukaikai Sho 61-149959.
No. 144961, No. 61-144962, JP-A-62.
Known cup wheel type grindstones can be used, including the cup wheel type grindstones described in JP-A-181875 and JP-A-2000-94342. The cup wheel type grindstone is available from Okamoto Machine Tool Co., Ltd., Asahi Diamond Co., Ltd., and Mitsubishi Materials Co., Ltd.

【0023】カップホイ−ル型砥石の刃先55は、ダイ
ヤモンド砥粒、CBN砥粒をフェノ−ル樹脂、エポキシ
樹脂等の接着剤で環状扇体に成型したものである。環状
扇体(砥石刃先)55の寸法は、高さが3〜7mm、幅
が3〜10mm、スリットで区分けされた砥石刃の長さ
が10〜50mmであるのが一般である。スリット幅は
1〜3mmである。カップホイ−ル型砥石の刃先55群
が形成する直径は、研削される基板の半径の4/3〜
2.2倍であり、好ましくは2倍である。カップホイ−
ル型砥石を該砥石の刃先が前記基板の略中心点を通過す
るようにスピンドルを回転させてカップホイ−ル型砥石
を基板面上で摺動させて基板表面を研削するので、液切
り堰90をチャック4外に設けることができる(図1、
図2参照)。
The blade edge 55 of the cup wheel type grindstone is formed by molding diamond abrasive grains and CBN abrasive grains into an annular fan with an adhesive such as phenol resin or epoxy resin. As for the dimensions of the annular fan body (grinding blade tip) 55, the height is generally 3 to 7 mm, the width is 3 to 10 mm, and the length of the grindstone blade divided by the slit is 10 to 50 mm. The slit width is 1 to 3 mm. The diameter formed by the blade group 55 of the cup wheel type grinding stone is 4/3 of the radius of the substrate to be ground.
2.2 times, preferably 2 times. Cup hoo
Since the cup wheel type grinding stone is slid on the substrate surface to grind the substrate surface by rotating the spindle so that the blade edge of the grinding wheel passes the substantially central point of the substrate, the liquid cutting weir 90 Can be provided outside the chuck 4 (FIG. 1,
See FIG. 2).

【0024】研削装置:研削装置は、前述の図5に示し
た研削装置は勿論、市販の裏面研削装置、例えば株式会
社 岡本工作機械製作所のGNX(商品名)シリ−ズ、
GNX−P(商品名)シリ−ズ(特開平11−3074
89号、株式会社東京精密のPG(商品名)シリ−ズも
使用できる。これら裏面研削装置の砥石カバ−28に、
図1に示すように支持部材91を設け、この支持部材に
液切り堰90をボルト92で固定する。砥石カバ−28
は、その一部材をスライド可能に設け、カップホイ−ル
型砥石50の刃先55の磨耗状態を観察できるようにす
るのが好ましい。
Grinding device: The grinding device is not limited to the grinding device shown in FIG. 5, but a commercially available back surface grinding device, for example, GNX (trade name) series manufactured by Okamoto Machine Tool Co., Ltd.
GNX-P (trade name) series (JP-A-11-3074)
No. 89, Tokyo Seimitsu Co., Ltd. PG (trade name) series can also be used. In the grindstone cover 28 of these backside grinding devices,
As shown in FIG. 1, a support member 91 is provided, and the liquid draining weir 90 is fixed to the support member with bolts 92. Whetstone cover-28
It is preferable that one of the members is slidably provided so that the wear state of the cutting edge 55 of the cup wheel type grindstone 50 can be observed.

【0025】液切り堰90は、図3で示すように断面凹
状の溝90aを有し、この溝の寸法は、該溝の側壁がカ
ップホイ−ル型砥石の刃先の側面より10〜1000μ
m、好ましくは30〜100μm、溝の底部が刃先の下
面より10〜1000μm、好ましくは30〜600μ
m離れる寸法とする。液切り堰90の溝幅wは10〜3
0mmで充分である。
As shown in FIG. 3, the liquid draining weir 90 has a groove 90a having a concave cross section. The size of this groove is such that the side wall of the groove is 10 to 1000 .mu.m from the side surface of the cutting edge of the cup wheel type grindstone.
m, preferably 30 to 100 μm, the bottom of the groove is 10 to 1000 μm from the lower surface of the cutting edge, preferably 30 to 600 μm
The distance is m. The groove width w of the liquid cutting weir 90 is 10 to 3
0 mm is sufficient.

【0026】液切り堰90の素材としては、セラミック
の素焼き、ポリ(テトラフルオロエチレン)、ポリ(ジ
クロロジフロロエチレン)、ポリアセタ−ル等の樹脂成
形品が挙げられる。
Examples of the material for the liquid draining weir 90 include resin moldings such as ceramic unglazed, poly (tetrafluoroethylene), poly (dichlorodifluoroethylene), and polyacetal.

【0027】液切り堰90の取り付け位置は、カップホ
イ−ル型砥石の刃先が基板を研削し、チャックから離れ
る位置に近いチャック外位置であり、研削液供給位置よ
り遠い位置である。
The attachment position of the liquid cutting weir 90 is a position outside the chuck near a position where the blade edge of the cup wheel type grindstone grinds the substrate and moves away from the chuck, and is a position far from the grinding liquid supply position.

【0028】基板の裏面研削は、基板3の裏面を上向き
としてポ−ラスセラミックチャック4を軸承する中空ス
ピンドル2を減圧して基板をチャック4に保持し、中空
スピンドル2をモ−タ2aで水平方向に回転させること
により前記チャック2に保持された基板を水平方向に回
転させつつ、研削液1〜15リットル/分を研削液供給
管59より基板表面に供給しつつカップホイ−ル型砥石
50を該砥石の刃先55が前記基板の略中心点を通過す
るようにスピンドル8を回転させてカップホイ−ル型砥
石を基板面上で摺動させて基板表面を研削する。なお、
研削液は、図5に示すように砥石50の環状溝56を経
由して基板3上に供給してもよいし、図2に示すように
直接基板上に供給してもよい。
For backside grinding of the substrate, the hollow spindle 2 bearing the porous ceramic chuck 4 is depressurized with the backside of the substrate 3 facing upward to hold the substrate on the chuck 4, and the hollow spindle 2 is horizontally moved by the motor 2a. By rotating the substrate held by the chuck 2 in the horizontal direction by supplying the grinding fluid 1 to 15 liters / minute to the surface of the substrate from the grinding fluid supply pipe 59, the cup wheel type grindstone 50 is rotated. The spindle 8 is rotated so that the blade edge 55 of the grindstone passes through the substantially center point of the substrate, and the cup wheel type grindstone is slid on the substrate surface to grind the substrate surface. In addition,
The grinding liquid may be supplied onto the substrate 3 via the annular groove 56 of the grindstone 50 as shown in FIG. 5, or may be supplied directly onto the substrate as shown in FIG.

【0029】中空スピンドル2の回転数は、30〜30
0rpm、スピンドル8の回転数は1000〜4000
rpmである。
The number of revolutions of the hollow spindle 2 is 30 to 30.
0 rpm, the rotation speed of the spindle 8 is 1000 to 4000
rpm.

【0030】[0030]

【実施例】実施例1 半導体基板として、厚みが約700μm、直径が300
mmのシリコンウエハ表面に、縦20mm、横20mm
角のデバイスパタ−ン複数をダイサ−幅200μm、ダ
イサ−溝深さ10μmで格子状に仕切ったデバイスパタ
−ンを有する半導体基板の前記デバイスパタ−ン面に保
護フィルムを貼着したものを用いた。
Example 1 A semiconductor substrate having a thickness of about 700 μm and a diameter of 300
20 mm long and 20 mm wide on the surface of a silicon wafer of mm
A device having a device pattern in which a plurality of square device patterns are divided into a grid pattern with a dicer width of 200 μm and a dicer groove depth of 10 μm and a protective film is attached to the device pattern surface. I was there.

【0031】裏面研削盤として、株式会社 岡本工作機
械製作所の裏面研削盤GNX300(商品名)の砥石カ
バ−に取り付けた支持部材にアルミナ粒子素焼きのセラ
ミック製液切り堰をボルトで固定した研削装置を用い
た。液切り堰の弧状溝の寸法は、裏面研削当初、該溝の
側壁がカップホイ−ル型砥石の刃先の側面より100μ
m、溝の底部が刃先の下面より200μm離れている寸
法で、弧状溝幅は15mmである。半導体基板の裏面シ
リコン層の取り代は、100μmと設定した。
As the backside grinding machine, a grinding machine in which a ceramic liquid draining weir made of alumina particle biscuit is fixed with bolts to a support member attached to a grindstone cover of a backside grinding machine GNX300 (trade name) manufactured by Okamoto Machine Tool Co., Ltd. Using. The size of the arc-shaped groove of the liquid cutting weir is 100 μm from the side surface of the cutting edge of the cup wheel type grinding stone when the back surface is initially ground.
m, the bottom of the groove is 200 μm away from the lower surface of the cutting edge, and the arcuate groove width is 15 mm. The margin of the back surface silicon layer of the semiconductor substrate was set to 100 μm.

【0032】前記半導体基板を、該保護フィルムがポ−
ラスセラミックチャック面に当接するように半導体基板
をチャック上に載せ、中空スピンドルを減圧して半導体
基板をチャックに固定した。ついで、中空スピンドルを
100rpmで回転させることにより半導体基板を水平
方向に回転させ、直径300mm径のカップホイ−ル型
砥石を軸承するスピンドルを3000rpmで回転させ
つつ、下降させてカップホイ−ル型砥石の刃先が半導体
基板の中心点を通過する位置で半導体基板のシリコン基
板に当接させ、半導体基板表面に研削液を6リットル/
分の割合で供給しつつ、液切り堰で刃先に付着した液を
切りながら基板の裏面研削を行なった。
The semiconductor substrate is covered with the protective film.
The semiconductor substrate was placed on the chuck so as to abut the lath ceramic chuck surface, and the hollow spindle was depressurized to fix the semiconductor substrate to the chuck. Next, the semiconductor substrate is horizontally rotated by rotating the hollow spindle at 100 rpm, and the spindle supporting the cup wheel type grinding wheel with a diameter of 300 mm is rotated at 3000 rpm while being lowered to make the blade edge of the cup wheel type grinding wheel. Is brought into contact with the silicon substrate of the semiconductor substrate at a position where it passes the center point of the semiconductor substrate, and 6 liters / liter of grinding liquid is applied to the surface of the semiconductor substrate.
The back surface of the substrate was ground while the liquid adhering to the blade was cut off by the liquid cutting weir while being supplied at a rate of min.

【0033】約100μm厚のシリコン層剥離の裏面研
削が終了したら、スピンドルを上昇させてカップホイ−
ル砥石を半導体基板面より遠ざけ、ついで、中空スピン
ドルの回転ならびに減圧を止め、中空スピンドルに圧空
を供給して半導体基板のチャック離れを容易とした。
When the back surface grinding for peeling off the silicon layer of about 100 μm thickness is completed, the spindle is raised and the cup wheel is moved.
The grinding wheel was moved away from the surface of the semiconductor substrate, and then rotation and depressurization of the hollow spindle were stopped, and compressed air was supplied to the hollow spindle to facilitate the chuck separation of the semiconductor substrate.

【0034】チャック上の半導体基板を搬送パッドに吸
着し、洗浄機構に搬送し、洗浄機構でスピン洗浄、スピ
ン乾燥し、ついで搬送ロボットで収納カセット内に裏面
研削された半導体基板を搬送した。
The semiconductor substrate on the chuck was adsorbed to the transfer pad, transferred to the cleaning mechanism, spin-cleaned and spin-dried by the cleaning mechanism, and then the back-ground semiconductor substrate was transferred into the storage cassette by the transfer robot.

【0035】上記の半導体基板200枚の裏面研削を同
様にして200枚連続して行なったが、半導体基板が破
損したものは皆無であった。
The backside grinding of 200 semiconductor substrates was continuously performed in the same manner, but none of the semiconductor substrates was damaged.

【0036】[0036]

【発明の効果】本発明の液切り堰を設けた研削装置は、
カップホイ−ル型砥石を用いて半導体基板を裏面研削す
る際、裏面研削により生じた研削屑を含有する研削液が
カップホイ−ル型砥石の刃先に付着しても、再び刃先が
研削系に戻る際に液切り堰により刃先に付着した研削屑
が除去されるので、研削屑が保護フィルムと基板のデバ
イスパタ−ン面の間に浸透する機会が失われ、よって、
研削時および基板搬送時に半導体基板が破損することが
ない。
EFFECTS OF THE INVENTION The grinding device provided with the liquid cutting dam of the present invention is
When back grinding a semiconductor substrate using a cup wheel type grindstone, even if the grinding fluid containing grinding dust generated by the back side grinding adheres to the blade edge of the cup wheel type grindstone, when the blade edge returns to the grinding system again. Since the grinding dust adhering to the blade edge is removed by the liquid cutting weir, the opportunity for the grinding dust to penetrate between the protective film and the device pattern surface of the substrate is lost.
The semiconductor substrate will not be damaged during grinding or substrate transfer.

【図面の簡単な説明】[Brief description of drawings]

【図1】砥石カバ−に設けた支持部材に液切り堰を設け
た研削装置の部分正面図である。
FIG. 1 is a partial front view of a grinding apparatus in which a support member provided on a grindstone cover is provided with a liquid cutting dam.

【図2】研削装置のカップホイ−ル型砥石の刃先回転方
向と、基板の回転方向と研削液供給位置と、液切り堰の
位置の相対関係を示す平面図である。
FIG. 2 is a plan view showing a relative relationship among a rotation direction of a cutting edge of a cup wheel type grindstone of a grinding device, a rotation direction of a substrate, a grinding liquid supply position, and a position of a liquid cutting weir.

【図3】液切り堰の斜視図である。FIG. 3 is a perspective view of a liquid draining weir.

【図4】チャック上に載置された半導体基板とカップホ
イ−ル型砥石と、液切り堰と、研削液供給機構の位置関
係を示す部分正面図である。
FIG. 4 is a partial front view showing a positional relationship among a semiconductor substrate mounted on a chuck, a cup wheel type grindstone, a liquid cutting dam, and a grinding liquid supply mechanism.

【図5】裏面研削装置のヘッド部分を示す正面図であ
る。(公知)
FIG. 5 is a front view showing a head portion of a backside grinding device. (Public)

【図6】裏面研削装置の正面図である。(公知)FIG. 6 is a front view of a backside grinding device. (Public)

【図7】カップホイ−ル型砥石の斜視図である。(公
知)
FIG. 7 is a perspective view of a cup wheel type grindstone. (Public)

【符号の説明】[Explanation of symbols]

1 研削装置 2 中空スピンドル 3 基板 3a デバイスパタ−ン 3b ダイサ−溝 4 チャック 5,50 カップホイ−ル型砥石 55 刃先 8 スピンドル 14 ビルト・イン・モ−タ− 28 砥石カバ− 59 研削液供給ノズル 80 保護フィルム 90 液切り堰 91 取付部材 1 grinding machine 2 hollow spindle 3 substrates 3a Device pattern 3b Dicer groove 4 chuck 5,50 cup wheel type grindstone 55 cutting edge 8 spindles 14 Built-in Motor 28 Whetstone cover 59 Grinding liquid supply nozzle 80 Protective film 90 draining weir 91 Mounting member

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 基板を保持するチャックと、スピンドル
に軸承された基板の半径よりも大きい直径を有するカッ
プホイ−ル型砥石と、研削液供給機構を備える研削装置
を用い、前記チャックに保持された基板を水平方向に回
転させつつ、研削液を基板表面に供給しつつカップホイ
−ル型砥石を該砥石の刃先が前記基板の略中心点を通過
するようにスピンドルを回転させてカップホイ−ル型砥
石を基板面上で摺動させて基板表面を研削する方法にお
いて、 基板面より離れたカップホイ−ル型砥石の刃先をチャッ
ク外に設けた液切り堰の溝内を通過させて刃先に付着し
た液体を除去することを特徴とする、基板の研削方法。
1. A chuck for holding a substrate, a cup wheel type grindstone having a diameter larger than the radius of the substrate supported by a spindle, and a grinding apparatus equipped with a grinding fluid supply mechanism are used to hold the chuck. While rotating the substrate in the horizontal direction, while supplying the grinding liquid to the substrate surface, the cup wheel type grindstone is rotated by rotating the spindle so that the blade edge of the grindstone passes through the substantially central point of the substrate. In the method of grinding the substrate surface by sliding on the substrate surface, the blade tip of the cup wheel type grindstone distant from the substrate surface is passed through the groove of the liquid cutting weir provided outside the chuck, and the liquid adhered to the blade tip. A method for grinding a substrate, characterized in that
【請求項2】 液切り堰の溝は、該溝の側壁がカップホ
イ−ル型砥石の刃先の側面より10〜1000μm、溝
の底部が刃先の下面より10〜1000μm離れている
寸法であることを特徴とする、請求項1に記載の基板の
研削方法。
2. The size of the groove of the liquid draining weir is such that the side wall of the groove is 10 to 1000 μm away from the side surface of the cutting edge of the cup wheel type grindstone, and the bottom of the groove is apart from 10 to 1000 μm from the lower surface of the cutting edge. The method for grinding a substrate according to claim 1, wherein the method is for grinding a substrate.
【請求項3】 基板を保持するチャック、該チャックの
回転機構、スピンドルに軸承された基板の半径よりも大
きい直径を有するカップホイ−ル型砥石、該スピンドル
の回転機構ならびに昇降機構、研削液供給機構、および
カップホイ−ル型砥石の刃先に付着した液体を除去する
液切り堰を備える研削装置。
3. A chuck for holding a substrate, a rotating mechanism for the chuck, a cup wheel type grindstone having a diameter larger than a radius of a substrate supported by a spindle, a rotating mechanism for the spindle, a lifting mechanism, and a grinding fluid supply mechanism. , And a grinding device equipped with a liquid cutting weir for removing the liquid adhering to the blade of the cup wheel type grindstone.
JP2001312925A 2001-10-10 2001-10-10 Method and device for grinding substrate Pending JP2003117818A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001312925A JP2003117818A (en) 2001-10-10 2001-10-10 Method and device for grinding substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001312925A JP2003117818A (en) 2001-10-10 2001-10-10 Method and device for grinding substrate

Publications (1)

Publication Number Publication Date
JP2003117818A true JP2003117818A (en) 2003-04-23

Family

ID=19131494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001312925A Pending JP2003117818A (en) 2001-10-10 2001-10-10 Method and device for grinding substrate

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008258554A (en) * 2007-03-12 2008-10-23 Disco Abrasive Syst Ltd Grinding machine of wafer
JP2012169487A (en) * 2011-02-15 2012-09-06 Disco Abrasive Syst Ltd Grinding apparatus
CN116276337A (en) * 2023-04-23 2023-06-23 南京茂莱光学科技股份有限公司 Processing method and processing device for high-flatness planar glass

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008258554A (en) * 2007-03-12 2008-10-23 Disco Abrasive Syst Ltd Grinding machine of wafer
JP2012169487A (en) * 2011-02-15 2012-09-06 Disco Abrasive Syst Ltd Grinding apparatus
CN116276337A (en) * 2023-04-23 2023-06-23 南京茂莱光学科技股份有限公司 Processing method and processing device for high-flatness planar glass
CN116276337B (en) * 2023-04-23 2023-11-07 南京茂莱光学科技股份有限公司 Processing method and processing device for high-flatness planar glass

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