TWI668848B - 陣列基板的製作方法以及通過該方法製得的陣列基板 - Google Patents

陣列基板的製作方法以及通過該方法製得的陣列基板 Download PDF

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TWI668848B
TWI668848B TW104116346A TW104116346A TWI668848B TW I668848 B TWI668848 B TW I668848B TW 104116346 A TW104116346 A TW 104116346A TW 104116346 A TW104116346 A TW 104116346A TW I668848 B TWI668848 B TW I668848B
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高逸群
林欣樺
李誌隆
方國龍
施博理
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鴻海精密工業股份有限公司
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Abstract

一種陣列基板的製作方法，該方法包括：提供薄膜電晶體，該薄膜電晶體包括通道層；形成覆蓋所述薄膜電晶體的絕緣覆蓋層；以及通過紫外光照射所述絕緣覆蓋層並用一遮擋物遮蔽所述通道層，所述絕緣覆蓋層未被所述遮擋物遮蔽的部分在所述紫外光的照射下由半透明變為透明。

Description

陣列基板的製作方法以及通過該方法製得的陣列基板
本發明涉及一種陣列基板的製作方法以及一種通過該方法製得的陣列基板。
液晶顯示面板通常包括陣列基板、對向基板以及夾設在所述陣列基板與對向基板之間的液晶層。其中，該陣列基板靠近液晶層的一側通常會覆蓋有一絕緣覆蓋層，例如是平坦化層等。為提高所述絕緣覆蓋層的透光率，通常會用紫外光漂白所述絕緣覆蓋層。然而，紫外光的照射容易破壞陣列基板中的通道層。
鑑於此，有必要提供一種陣列基板的製作方法，該方法包括：提供薄膜電晶體，該薄膜電晶體包括通道層；形成覆蓋所述薄膜電晶體的絕緣覆蓋層；以及通過紫外光照射所述絕緣覆蓋層並用一遮擋物遮蔽所述通道層，所述絕緣覆蓋層未被所述遮擋物遮蔽的部分在所述紫外光的照射下由半透明變為透明。
還有必要提供一種通過上述方法製得的陣列基板。
一種陣列基板，該陣列基板包括基板、形成在所述基板上的薄膜 電晶體以及覆蓋所述薄膜電晶體的絕緣覆蓋層，所述薄膜電晶體包括通道層，所述絕緣覆蓋層對應所述通道層的位置是半透明的，所述絕緣覆蓋層對應所述通道層以外的位置是透明的。
相較於習知技術，本發明所提供的陣列基板的製作方法以及通過該方法製得的陣列基板由於在漂白絕緣覆蓋層時通道層被遮擋物遮擋，該通道層不會被破壞，從而能夠得到更加穩定的陣列基板。
1‧‧‧顯示面板
10‧‧‧陣列基板
11‧‧‧對向基板
12‧‧‧液晶層
101‧‧‧基板
102‧‧‧閘極
103‧‧‧閘極絕緣層
104‧‧‧通道層
105‧‧‧源極
106‧‧‧汲極
107‧‧‧數據絕緣層
108‧‧‧絕緣覆蓋層
151‧‧‧閘極線
152‧‧‧數據線
153‧‧‧圖元電極
161‧‧‧通孔
108a‧‧‧第一區域
108b‧‧‧第二區域
300‧‧‧掩膜
圖1是本發明具體實施方式的顯示面板。
圖2是本發明具體實施方式的陣列基板。
圖3是沿圖2中III-III切割線所做的剖視圖。
圖4是本發明陣列基板製作方法的第一實施方式的流程圖。
圖5至圖9是圖4中各步驟的分步示意圖。
圖10是本發明陣列基板製作方法的第二實施方式的流程圖。
圖11-12是圖10中各步驟的分步示意圖。
下面結合附圖將對本發明實施方式作進一步的詳細說明。
請參閱圖1，本發明具體實施方式所提供的顯示面板1包括陣列基板10、對向基板11以及液晶層12。所述液晶層12夾設於所述陣列基板10與對向基板11之間。在本實施方式中，所述陣列基板10為薄膜電晶體基板，所述對向基板11為彩色濾光片基板。
請一併參閱圖2與圖3，本發明具體實施方式所提供的陣列基板10 包括基板101、閘極102、閘極絕緣層103、通道層104、源極105、汲極106、資料絕緣層107、絕緣覆蓋層108、閘極線151、資料線152以及畫素電極153。其中，所述閘極102、閘極絕緣層103、通道層104、源極105與汲極106共同構成一薄膜電晶體。
具體地，所述閘極102與閘極線151形成在所述基板101上。所述閘極絕緣層103覆蓋所述閘極102與閘極線151。所述通道層104設置在所述閘極絕緣層103上且位置正對所述閘極102。所述源極105、汲極106以及資料線152形成在所述閘極絕緣層103上，且所述源極105與汲極106分別覆蓋所述通道層104的兩端。所述資料絕緣層107覆蓋所述閘極絕緣層103、通道層104、源極105、汲極106以及資料線152。所述畫素電極153形成在所述資料絕緣層107上，並通過一開設在所述資料絕緣層107上的通孔161與所述汲極106電性連接。所述絕緣覆蓋層108形成在所述資料絕緣層107上並覆蓋所述畫素電極153。在本實施方式中，所述絕緣覆蓋層108為一平坦化層，所述絕緣覆蓋層108遠離所述資料絕緣層107的表面呈一平坦的表面。
所述絕緣覆蓋層108包括對應所述通道層104的第一區域108a以及對應所述通道層104以外的位置的第二區域108b。所述第一區域108a是半透明的，有時會呈現一定的黃色。所述第二區域108b是透明的。所述第二區域108b是在紫外光的照射下由半透明變為透明的。
在本實施方式中，所述基板101的材質選自透明基材，例如玻璃、石英或有機聚合物等。所述閘極102、閘極線151、源極105、汲極106以及資料線152的材質選自金屬，例如鋁、鈦、鉬、鉭、 銅等。所述通道104的材質選自半導體，例如金屬氧化物、非晶矽或多晶矽等。所述閘極絕緣層103以及資料絕緣層107的材質選自透明絕緣材料，例如氧化矽、氮化矽、氧化鋁以及氮氧化矽等。所述畫素電極153的材質選自透明導電材料，如氧化銦錫(ITO)。所述絕緣覆蓋層108選自能夠在紫外光的照射下變透明的有機材料，例如採用日本JSR公司的PC(聚碳酸酯)系列、富士膠片株式會社的平坦層材料以及苯並環乙烯(BCB)等。
下面將會通過兩個具體實施方式對本發明陣列基板10的製作方法進行描述。本發明具體實施方式所提供的陣列基板10的製作方法主要是通過在紫外光照射絕緣覆蓋層108時使用一遮擋物遮蔽所述通道層104，從而避免所述通道層104被紫外光破壞。
請參閱圖4，為本發明陣列基板10製作方法的第一實施方式的流程圖。所應說明的是，本發明陣列基板10製作方法並不受限於下述步驟的順序，且在其他實施方式中，本發明陣列基板10製作方法可以只包括以下所述步驟的其中一部分，或者其中的部分步驟可以被刪除。下面結合圖4各流程步驟的說明對本發明陣列基板10製作方法的第一實施方式進行詳細介紹。
步驟S201，請參閱圖5，提供基板101，並在所述基板101上形成閘極102。
具體地，首先提供基板101，在所述基板101上形成一金屬層，並通過黃光製程圖案化所述金屬層以形成所述閘極102。
可以理解，所述閘極線151與所述閘極102在同一黃光製程中形成。
在本實施方式中，所述基板101的材質選自透明基材，例如玻璃、石英或有機聚合物等。所述金屬例如是鋁、鈦、鉬、鉭、銅等。
步驟S202，請參閱圖6，在所述基板101上形成覆蓋所述閘極102的閘極絕緣層103，在所述閘極絕緣層103上形成一半導體層，並在一掩膜300的遮蔽下通過黃光製程圖案化所述半導體層以形成通道層104。
在本實施方式中，所述閘極絕緣層103的材質選自透明絕緣材料，例如氧化矽、氮化矽、氧化鋁以及氮氧化矽等。所述半導體層例如是金屬氧化物、非晶矽或多晶矽等。
步驟S203，請參閱圖7，在所述閘極絕緣層103上形成源極105與汲極106，所述源極105與汲極106分別覆蓋所述通道層104的兩端。
具體地，首先在所述閘極絕緣層103上形成一金屬層，並通過黃光製程圖案化所述金屬層以形成所述源極105與汲極106。
可以理解，所述資料線152與所述源極105與汲極106在同一步驟中形成。
在本實施方式中，所述金屬例如是鋁、鈦、鉬、鉭、銅等。
步驟S204，請參閱圖8，形成覆蓋所述閘極絕緣層103、通道層104、源極105以及汲極106的資料絕緣層107，並在所述資料絕緣層107上形成絕緣覆蓋層108。
在本實施方式中，所述資料絕緣層107的材質選自透明絕緣材料 ，例如氧化矽、氮化矽、氧化鋁以及氮氧化矽等。所述絕緣覆蓋層108選自能夠在紫外光的照射下變透明的有機材料，例如採用日本JSR公司的PC(聚碳酸酯)系列、富士膠片株式會社的平坦層材料以及苯並環乙烯(BCB)等。
步驟S205，請參閱圖9，通過紫外光照射所述絕緣覆蓋層108並用所述掩膜300遮蔽所述通道層104，所述絕緣覆蓋層108未被所述掩膜300遮蔽的部分108b在所述紫外光的照射下由半透明變為透明。
由此，在本實施方式中，通過在形成通道層104時的掩膜300作為紫外光照射絕緣覆蓋層108時使用的遮擋物，能夠避免通道層108被紫外光破壞，從而得到更加穩定的陣列基板10。
請參閱圖10，為本發明陣列基板10製作方法的第二實施方式的流程圖。所應說明的是，本發明陣列基板10製作方法並不受限於下述步驟的順序，且在其他實施方式中，本發明陣列基板10製作方法可以只包括以下所述步驟的其中一部分，或者其中的部分步驟可以被刪除。下面結合圖10各流程步驟的說明對本發明陣列基板10製作方法的第二實施方式進行詳細介紹。
步驟S301，請參閱圖11，提供陣列基板半成品包括閘極102、通道層104以及絕緣覆蓋層108，所述通道層104位於所述閘極102與所述絕緣覆蓋層108之間。
具體地，所述陣列基板半成品還包括基板101、閘極絕緣層103，、源極105、汲極106以及資料絕緣層107。其中，所述閘極102形成在所述基板101上。所述閘極絕緣層103形成在所述基板101上 並覆蓋所述閘極102。所述通道層104形成在所述閘極絕緣層103上且位置正對所述閘極102。所述源極105與汲極106形成在所述閘極絕緣層103上且分別覆蓋所述通道層104兩端。所述資料絕緣層107覆蓋所述閘極絕緣層103、通道層104、源極105以及汲極106。所述絕緣覆蓋層108覆蓋所述資料絕緣層107。
在本實施方式中，所述基板101的材質選自透明基材，例如玻璃、石英或有機聚合物等。所述閘極102、源極105以及汲極106的材質選自金屬，例如鋁、鈦、鉬、鉭、銅等。所述通道104的材質選自半導體，例如金屬氧化物、非晶矽或多晶矽等。所述閘極絕緣層103以及資料絕緣層107的材質選自透明絕緣材料，例如氧化矽、氮化矽、氧化鋁以及氮氧化矽等。所述絕緣覆蓋層108選自能夠在紫外光的照射下變透明的有機材料，例如採用日本JSR公司的PC(聚碳酸酯)系列、富士膠片株式會社的平坦層材料以及苯並環乙烯(BCB)等。
步驟S302，請參閱圖12，通過紫外光從所述閘極103遠離所述絕緣覆蓋層108的一側照射所述絕緣覆蓋層108，，所述絕緣覆蓋層108未被所述閘極103遮蔽的部分在所述紫外光的照射下由半透明變為透明。
由此，在本實施方式中，通過閘極103作為紫外光照射絕緣覆蓋層108時使用的遮擋物，能夠避免通道層108被紫外光破壞，從而得到更加穩定的陣列基板10。相較於製作方法的第一實施方式，本實施方式由於無需再次使用所述掩膜300，製程更加簡單。
綜上所述，本創作符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本創作之較佳實施例，本創作之範圍並不以上 述實施例為限，舉凡熟習本案技藝之人士爰依本創作之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。

Claims (5)

  1. 一種陣列基板的製作方法，該方法包括：提供薄膜電晶體，該薄膜電晶體包括通道層；形成覆蓋所述薄膜電晶體的絕緣覆蓋層；以及通過紫外光照射所述絕緣覆蓋層並用一遮擋物遮蔽所述通道層，所述絕緣覆蓋層未被所述遮擋物遮蔽的部分在所述紫外光的照射下由半透明變為透明；所述薄膜電晶體還包括閘極，所述通道層位於所述閘極與所述絕緣覆蓋層之間，所述紫外光從所述閘極遠離所述絕緣覆蓋層的一側照射所述絕緣覆蓋層，所述閘極作為所述遮擋物。。
  2. 如請求項1所述的陣列基板的製作方法，其中，所述閘極的材質為金屬。
  3. 如請求項1所述的陣列基板的製作方法，其中，該通道層的形成方法包括：形成一半導體層，並在一掩膜的遮蔽下通過黃光製程圖案化所述半導體層以形成通道層。
  4. 如請求項1所述的陣列基板的製作方法，其中，所述紫外光照射所述絕緣覆蓋層未被所述遮擋物遮蔽的部分，所述絕緣覆蓋層未被所述遮擋物遮蔽的部分在所述紫外光的照射下由半透明被漂白為透明。
  5. 如請求項1所述的陣列基板的製作方法，其中，所述絕緣覆蓋層遠離所述薄膜電晶體的表面呈一平坦的表面。
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