TWI666302B - 用於氧化銦層的蝕刻劑組合物，蝕刻方法，使用它們的液晶顯示器陣列基板及其製造方法 - Google Patents
用於氧化銦層的蝕刻劑組合物，蝕刻方法，使用它們的液晶顯示器陣列基板及其製造方法 Download PDFInfo
- Publication number
- TWI666302B TWI666302B TW105102697A TW105102697A TWI666302B TW I666302 B TWI666302 B TW I666302B TW 105102697 A TW105102697 A TW 105102697A TW 105102697 A TW105102697 A TW 105102697A TW I666302 B TWI666302 B TW I666302B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- indium oxide
- etchant composition
- etching
- layer
- Prior art date
Links
- 229910003437 indium oxide Inorganic materials 0.000 title claims abstract description 83
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 239000000203 mixture Substances 0.000 title claims abstract description 73
- 238000005530 etching Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229910002651 NO3 Inorganic materials 0.000 claims abstract description 19
- -1 nitrate compound Chemical class 0.000 claims abstract description 19
- 150000001805 chlorine compounds Chemical class 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 10
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000011161 development Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 235000002639 sodium chloride Nutrition 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 124
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??10-2015-0025012 | 2015-02-23 | ||
| KR1020150025012A KR102282955B1 (ko) | 2015-02-23 | 2015-02-23 | 인듐산화막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201634666A TW201634666A (zh) | 2016-10-01 |
| TWI666302B true TWI666302B (zh) | 2019-07-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105102697A TWI666302B (zh) | 2015-02-23 | 2016-01-28 | 用於氧化銦層的蝕刻劑組合物，蝕刻方法，使用它們的液晶顯示器陣列基板及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR102282955B1 (ko) |
| CN (2) | CN105907396A (ko) |
| TW (1) | TWI666302B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108930038B (zh) * | 2017-05-22 | 2021-03-16 | 东友精细化工有限公司 | 银薄膜蚀刻液组合物、蚀刻方法和金属图案的形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911156A (zh) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | 用于金属氧化物层的蚀刻剂组合物 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB499627A (en) * | 1937-04-08 | 1939-01-26 | Aluminium Walzwerke Singen | Improvements in and relating to methods of making electrodes for electrolytic condensers |
| JPH02111886A (ja) * | 1988-10-18 | 1990-04-24 | Sumitomo Special Metals Co Ltd | リードフレーム用Ａｌ部分クラッド板のＮｉ―Ｆｅ合金の選択的エッチング液 |
| JP2002184748A (ja) * | 2000-12-12 | 2002-06-28 | Matsushita Electric Ind Co Ltd | エッチング液及びそれを使用したエッチング方法 |
| KR20070053957A (ko) * | 2005-11-22 | 2007-05-28 | 주식회사 동진쎄미켐 | 투명도전막 식각조성물 |
| KR101294968B1 (ko) * | 2006-11-20 | 2013-08-09 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 식각방법 |
| KR20090082772A (ko) * | 2008-01-28 | 2009-07-31 | 주식회사 동진쎄미켐 | 산화 인듐 주석막 식각용 식각액 조성물 및 이를 이용한산화 인듐 주석막 식각 방법 |
| KR101507159B1 (ko) * | 2008-09-02 | 2015-03-31 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
| JP5767796B2 (ja) * | 2010-09-28 | 2015-08-19 | 林純薬工業株式会社 | エッチング液組成物およびエッチング方法 |
| KR101774484B1 (ko) | 2011-02-15 | 2017-09-05 | 삼성디스플레이 주식회사 | 인듐 산화막의 비할로겐성 식각액 및 이를 이용한 표시 기판의 제조 방법 |
| KR20130084717A (ko) * | 2012-01-18 | 2013-07-26 | 솔브레인 주식회사 | 식각 조성물 및 이를 이용한 표시 기판의 제조 방법 |
| CN102732252A (zh) * | 2012-06-21 | 2012-10-17 | 江阴润玛电子材料股份有限公司 | 一种新型王水系ito蚀刻液及制备方法 |
| CN102732253A (zh) * | 2012-06-30 | 2012-10-17 | 江阴润玛电子材料股份有限公司 | 一种三氯化铁系ito蚀刻液及其制备方法 |
| KR101953215B1 (ko) * | 2012-10-05 | 2019-03-04 | 삼성디스플레이 주식회사 | 식각 조성물, 금속 배선 및 표시 기판의 제조방법 |
| KR20140086666A (ko) * | 2012-12-28 | 2014-07-08 | 동우 화인켐 주식회사 | 금속 산화물막의 식각액 조성물 |
-
2015
- 2015-02-23 KR KR1020150025012A patent/KR102282955B1/ko active IP Right Grant
-
2016
- 2016-01-28 TW TW105102697A patent/TWI666302B/zh active
- 2016-02-04 CN CN201610079267.3A patent/CN105907396A/zh active Pending
- 2016-02-04 CN CN201910679544.8A patent/CN110484258B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911156A (zh) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | 用于金属氧化物层的蚀刻剂组合物 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110484258B (zh) | 2022-01-14 |
| KR102282955B1 (ko) | 2021-07-28 |
| TW201634666A (zh) | 2016-10-01 |
| CN110484258A (zh) | 2019-11-22 |
| KR20160102662A (ko) | 2016-08-31 |
| CN105907396A (zh) | 2016-08-31 |
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