TWI665327B - 結晶性氧化物半導體薄膜及半導體裝置 - Google Patents

結晶性氧化物半導體薄膜及半導體裝置 Download PDF

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Publication number
TWI665327B
TWI665327B TW107112140A TW107112140A TWI665327B TW I665327 B TWI665327 B TW I665327B TW 107112140 A TW107112140 A TW 107112140A TW 107112140 A TW107112140 A TW 107112140A TW I665327 B TWI665327 B TW I665327B
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Taiwan
Prior art keywords
thin film
crystalline oxide
oxide semiconductor
semiconductor thin
film
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TW107112140A
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English (en)
Chinese (zh)
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TW201829824A (zh
Inventor
Toshimi HITORA
人羅俊實
Masaya Oda
織田真也
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Flosfia Inc.
日商Ｆｌｏｓｆｉａ股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW107112140A 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜及半導體裝置 TWI665327B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014072780 2014-03-31
JP2014-072780 2014-03-31

Publications (2)

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TW201829824A TW201829824A (zh) 2018-08-16
TWI665327B true TWI665327B (zh) 2019-07-11

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TW107112140A TWI665327B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜及半導體裝置
TW104110315A TWI571525B (zh) 2014-03-31 2015-03-30 A crystalline laminated structure, and a semiconductor device
TW105143387A TWI625413B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜

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TW104110315A TWI571525B (zh) 2014-03-31 2015-03-30 A crystalline laminated structure, and a semiconductor device
TW105143387A TWI625413B (zh) 2014-03-31 2015-03-30 結晶性氧化物半導體薄膜

Country Status (5)

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US (2) US10090388B2 (https=)
EP (1) EP2933825B1 (https=)
JP (2) JP6379369B2 (https=)
CN (4) CN110176493A (https=)
TW (3) TWI665327B (https=)

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US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
JP7166522B2 (ja) * 2017-08-21 2022-11-08 株式会社Flosfia 結晶膜の製造方法
EP3712305A4 (en) * 2017-11-15 2021-11-17 Flosfia Inc. P-TYPE OXIDE SEMICONDUCTORIAL LAYER AND METHOD FOR MANUFACTURING THEREOF
TWI777078B (zh) * 2018-08-01 2022-09-11 日本商出光興產股份有限公司 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器
JP7115688B2 (ja) * 2019-01-25 2022-08-09 株式会社デンソー 成膜装置及び半導体装置の製造方法
JP7306640B2 (ja) * 2019-08-28 2023-07-11 信越化学工業株式会社 結晶性酸化物膜
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
CN114423883B (zh) * 2019-09-30 2024-03-12 日本碍子株式会社 α－Ga2O3系半导体膜
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7200205B2 (ja) 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置
TWM633282U (zh) 2021-04-28 2022-10-21 日商信越化學工業股份有限公司 積層結構體、半導體裝置以及積層結構體的製造系統

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TWI625413B (zh) 2018-06-01
CN104952927A (zh) 2015-09-30
EP2933825B1 (en) 2017-07-05
US20190013384A1 (en) 2019-01-10
US11038026B2 (en) 2021-06-15
JP2018203614A (ja) 2018-12-27
JP2015199649A (ja) 2015-11-12
TW201713790A (zh) 2017-04-16
EP2933825A1 (en) 2015-10-21
TWI571525B (zh) 2017-02-21
CN110310996B (zh) 2020-09-08
JP6379369B2 (ja) 2018-08-29
US20150279944A1 (en) 2015-10-01
CN110310996A (zh) 2019-10-08
CN110176493A (zh) 2019-08-27
TW201536945A (zh) 2015-10-01
TW201829824A (zh) 2018-08-16
CN110299414A (zh) 2019-10-01
JP6539921B2 (ja) 2019-07-10
US10090388B2 (en) 2018-10-02
CN104952927B (zh) 2019-08-13

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