TWI655741B - 電子封裝件 - Google Patents

電子封裝件 Download PDF

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TWI655741B
TWI655741B TW107100904A TW107100904A TWI655741B TW I655741 B TWI655741 B TW I655741B TW 107100904 A TW107100904 A TW 107100904A TW 107100904 A TW107100904 A TW 107100904A TW I655741 B TWI655741 B TW I655741B
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Taiwan
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carrier
electronic package
antenna structure
wire
metal frame
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TW107100904A
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TW201931558A (zh
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蔡明汎
邱志賢
蔡宗賢
楊超雅
陳嘉揚
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矽品精密工業股份有限公司
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Priority to TW107100904A priority Critical patent/TWI655741B/zh
Priority to CN201810269719.3A priority patent/CN110021563B/zh
Priority to US16/028,798 priority patent/US11069633B2/en
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Publication of TWI655741B publication Critical patent/TWI655741B/zh
Publication of TW201931558A publication Critical patent/TW201931558A/zh

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    • H—ELECTRICITY
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    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
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    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/526—Electromagnetic shields
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    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
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    • H01Q9/30—Resonant antennas with feed to end of elongated active element, e.g. unipole
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    • H01L2223/6661—High-frequency adaptations for passive devices
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48105—Connecting bonding areas at different heights
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract

一種電子封裝件，係於一承載件上設置電子元件、緩衝部與天線結構，其中，該天線結構包含立設於該承載件上金屬架及佈設於該承載件上且電性連接該金屬架之導線，並使該緩衝部遮蓋該導線，以降低該導線之發射波速，進而降低該導線之發射波長，故該電子封裝件可在該承載件之有限空間中滿足天線的需求長度，使該天線結構能幅射出所需之作用頻率。

Description

電子封裝件
本發明係有關一種電子封裝件，尤指一種具天線結構之電子封裝件。
隨著電子產業的蓬勃發展，電子產品也逐漸邁向多功能、高性能的趨勢。目前無線通訊技術已廣泛應用於各式各樣的消費性電子產品以利接收或發送各種無線訊號。
為了滿足消費性電子產品的外觀設計需求，無線通訊模組之製造與設計係朝輕、薄、短、小之需求作開發，其中，平面天線(Patch Antenna)因具有體積小、重量輕與製造容易等特性而廣泛利用於手機(cell phone)、個人數位助理(Personal Digital Assistant，簡稱PDA)等電子產品之無線通訊模組中。
第1圖係習知無線通訊模組之立體示意圖，該無線通訊模組1係包括：一基板10、設於該基板10上之複數電子元件11、一天線結構12以及封裝材13。該基板10係為電路板並呈矩形體。該電子元件11係設於該基板10上且電性連接該基板10。該天線結構12係為平面型且具有一天線本體120與一導線121，該天線本體120藉由該導線 121電性連接該電子元件11。該封裝材13覆蓋該電子元件11與該部分導線121。
惟，習知無線通訊模組1中，該天線結構12係為平面型，且當該天線結構12之作用頻率需為2.44GHz時，則需令該天線結構12之最小電性長度等於1/4波長，然因該天線結構12與該電子元件11之間的電磁輻射特性及該天線結構12之體積限制，在該基板10之有限空間中，難以增加該天線本體120與該導線121之長度，致使無法符合該天線結構12之作用頻率為2.44GHz之需求。
再者，因該天線結構12係為平面型，故需於該基板10之表面上增加佈設區域(未形成封裝材13之區域)以形成該天線本體120，致使該基板10之寬度難以縮減，因而難以縮小該無線通訊模組1的寬度，導致該無線通訊模組1無法達到微小化之需求。
因此，如何克服上述習知技術之種種問題，實已成目前亟欲解決的課題。
鑑於上述習知技術之種種缺失，本發明係揭露一種電子封裝件，係包括：承載件；至少一電子元件，係設於該承載件上；天線結構，係設於該承載件上並電性連接該承載件，其中，該天線結構包含立設於該承載件上之金屬架及設於該承載件上且電性連接該金屬架之導線；以及緩衝部，係遮蓋該導線且未電性連接該天線結構。
前述之電子封裝件中，該天線結構以該導線電性連接 該承載件。
前述之電子封裝件中，該天線結構之作用頻率係為2.44GHz。
前述之電子封裝件中，該金屬架包含有延伸部與至少一支撐部，該延伸部藉由該支撐部架設於該承載件上。例如，該緩衝部係位於該延伸部與該導線之間。於一實施例中，該支撐部係貫穿該緩衝部。
前述之電子封裝件中，該緩衝部係為絕緣體，如介電材，其介電係數為5至15。
前述之電子封裝件中，該緩衝部係接觸該金屬架。
前述之電子封裝件中，該緩衝部係遮蓋部分該導線或遮蓋全部該導線。
前述之電子封裝件中，復包括封裝材，係形成於該承載件上以包覆該電子元件、該緩衝部與該天線結構。
前述之電子封裝件中，復包括形成於該承載件上且遮蓋該電子元件之屏蔽結構。
由上可知，本發明之電子封裝件主要藉由該緩衝部遮蔽該導線之設計，以有效降低該導線之發射波速，而降低該導線之發射波長，故相較於習知技術，該電子封裝件可在該承載件之有限空間中滿足天線的需求長度，使該天線結構能幅射出所需之作用頻率。
再者，藉由該金屬架之立體化設計，而無需於該承載件之表面上增加佈設區域，故相較於習知技術，本發明能於預定的承載件尺寸下增加該天線結構之長度，而達到天 線運作之需求，且能使該電子封裝件符合微小化之需求。
1‧‧‧無線通訊模組
10‧‧‧基板
11,21‧‧‧電子元件
12,22‧‧‧天線結構
120‧‧‧天線本體
121,22c‧‧‧導線
13,23‧‧‧封裝材
2‧‧‧電子封裝件
20‧‧‧承載件
20c‧‧‧側面
200‧‧‧線路結構
22a‧‧‧金屬架
220‧‧‧延伸部
221‧‧‧支撐部
24‧‧‧屏蔽結構
25,35a,35b,35c‧‧‧緩衝部
350‧‧‧穿孔
A‧‧‧第一區域
B‧‧‧第二區域
第1圖係為習知無線通訊模組之立體示意圖；以及第2A至2C圖係為本發明之電子封裝件之製法的立體示意圖；其中，第2C’圖係為對應第2C圖的剖面示意圖；以及第3A至3C圖係為對應第2C’圖的其它實施例之剖面示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”、“二”及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。
第2A至2C圖係為本發明之電子封裝件2之製法之立 體示意圖。於本實施例中，該電子封裝件2係例如為系統級封裝(System in package，簡稱SiP)之無線通訊模組。
如第2A圖所示，於該承載件20上設置至少一電性連接該承載件20之電子元件及天線結構22，且於該承載件20對應該天線結構22之處配置至少一緩衝部25。
所述之承載件20係例如呈矩形體，並定義有相鄰接之第一區域A與第二區域B。於本實施例中，該承載件20係例如為具有核心層與線路結構之封裝基板(substrate)或無核心層(coreless)之線路結構，其構成係於介電材上形成複數線路結構200，如扇出(fan out)型重佈線路層(redistribution layer，簡稱RDL)。應可理解地，該承載件20亦可為其它可供承載如晶片等電子元件之承載單元，例如導線架(leadframe)(其導腳可視為線路結構)，並不限於上述。
所述之電子元件21係為主動元件、被動元件或其二者組合，且該主動元件係例如半導體晶片，而該被動元件係例如電阻、電容及電感。例如，該電子元件21係為半導體晶片，其設於該承載件20之第一區域A上。於本實施例中，該電子元件係藉由複數銲線以打線方式電性連接該線路結構200；或者，該電子元件21可藉由藉由複數如銲錫材料之導電凸塊(圖略)以覆晶方式設於該線路結構200上並電性連接該線路結構200；亦或，該電子元件21可直接接觸該線路結構200。應可理解地，有關該電子元件21電性連接該承載件20之方式繁多，不限於上述。
所述之天線結構22係設於該承載件20之第二區域B上，並包含一金屬架22a及至少一電性連接該金屬架22a之導線22c，使該天線結構22以該導線22c電性連接該承載件20。
於本實施例中，該天線結構22之作用頻率係為2.44GHz。具體地，若可降低波長，即可使天線在有限空間中滿足最小1/4波長的電性長度的條件，而令該天線結構22幅射出2.44GHz之作用頻率。
再者，該金屬架22a係為鐵架或其它材質，其具有一延伸部220與一支撐部221，該支撐部221係立設於該承載件20上，且該延伸部220藉由該支撐部221架設於該承載件20上，使該延伸部220之位置高於該電子元件21與該緩衝部25之位置，且該延伸部220係沿該承載件20之第二區域B之邊緣作相對應延伸。具體地，該延伸部220係作為天線主體，其呈彎曲或彎折狀，例如，呈現具缺口之環狀(如扣環狀或ㄇ字形)、L字型或連續環狀(如口字型)，且該支撐部221係電性連接該導線22c，其為單一柱體，但亦可依需求設計為其它形狀(如牆體)或複數個。
又，該導線22c係設於該承載件20上並電性連接該線路結構200，且其中一端部連接該支撐部221，而另一端部連接該路層200。例如，該導線22c係與該線路結構200一同製作，如RDL製程。應可理解地，該導線22c亦可分為不相連之兩線段，其中一線段連接該支撐部221，而另一線段連接該路層200。
另外，該支撐部221係作為訊號輸入端或接地端，使該電子元件21可依需求藉由至少一銲線(圖略)電性連接該延伸部220，且該延伸部220與該導線22c均可作為天線發射源，但藉由該支撐部221架高該延伸部220以強化發射源，故於強度上，該延伸部220大於該導線22c。
所述之緩衝部25係位於該第二區域B上以遮蓋該導線22c且未電性連接該天線結構22、該電子元件21與該承載件20。
於本實施例中，該緩衝部25係為絕緣體，如介電材，其介電係數(Er)係為5至15，較佳為10，如陶瓷(ceramic)。需注意，該緩衝部25因接觸該天線結構22但未電性連接該天線結構22，故其不屬於導體或半導體。應可理解地，若該緩衝部25未接觸該天線結構22且未電性連接該天線結構22，其材質可選擇絕緣體、導體或半導體。
再者，該金屬架22a架設於該承載件20上，且於該延伸部220與該承載件20之間形成容置空間，故能利用該容置空間佈設該緩衝部25，使該緩衝部25位於該延伸部220與該導線22c之間，且未接觸該延伸部220。或者，如第3A圖所示，可令該緩衝部35a接觸該金屬架22a之延伸部220。
又，該緩衝部25係遮蓋全部該導線22c。然而，於另一製程中，如第3B圖所示，可令該緩衝部35b遮蓋部分該導線22c。
另外，於其它製程中，如第3C圖所示，可令該支撐 部221貫穿該緩衝部35c。例如，該緩衝部35c形成穿孔350，以令該支撐部221插入或填入該穿孔350中。
如第2B圖所示，形成封裝材23於該承載件20上，以令該封裝材23包覆該電子元件21、該天線結構22及緩衝部25。
於本實施例中，該封裝材23係為聚醯亞胺(polyimide，簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy)或封裝材(molding compound)等，但不限於上述。
如第2C圖所示，形成一屏蔽結構24於該封裝材23上，以遮蓋該電子元件21。
於本實施例中，該屏蔽結構24係覆蓋該封裝材23之部分表面與該承載件20之部分側面，亦即僅對應形成於該承載件20之第一區域A，使其與該天線結構22未重疊，亦即該屏蔽結構24未遮蓋該天線結構22。
再者，可藉由塗佈金屬層(如銅材)之加工方式形成該屏蔽結構24於該封裝材23上，例如，濺鍍(sputtering)、蒸鍍(vaporing)、電鍍、無電電鍍或化鍍等方式；或者，利用蓋設金屬架或金屬罩、或貼膜(foiling)等設置方式形成該屏蔽結構24於該封裝材23上；亦或，可先於該承載件20上設置如金屬架或金屬罩之屏蔽結構，再以該封裝材23包覆該屏蔽結構，使外觀如第2B圖所示。
又，該屏蔽結構24可依需求選擇覆蓋該承載件20之第一區域A之垂直投影範圍，如全部、1/2或1/3，甚至可選擇覆蓋該承載件20之第一區域A之部分側面20c或全 部側面20c。
另外，藉由該屏蔽結構24之設計，使該電子元件21不會受外界之電磁干擾。具體地，該屏蔽結構24可選擇性形成或不形成，例如，當該電子元件21之感應較為靈敏或該封裝材23之厚度不足時，該電子元件21容易受電磁干擾，此時才需形成該屏蔽結構24。
於後續製程中，可將應用該電子封裝件2之產品製成捲帶式結構，如卷帶包裝(tape-on-reel)方式。
因此，由於波速正比波長之原理關係，亦即降低(減緩)波速，即可降低波長，故本發明之電子封裝件2藉由該緩衝部25,35a,35b,35c遮蔽該導線22c之設計，以有效降低(或減緩)該導線22c之發射波速，而降低該導線22c之發射波長。藉此，相較於習知技術，該電子封裝件2能在該承載件20之第二區域B之有限空間中，無需增加該導線22c之長度，即滿足該天線結構22(或該導線22c)之最小電性長度為1/4波長的條件，使該天線結構22能幅射出2.44GHz之作用頻率。
再者，該金屬架22a架設於該承載件20上而呈立體式天線本體，因而無需於該承載件20之表面上增加佈設區域，故相較於習知技術，該電子封裝件2能於預定的承載件20尺寸下增加該天線結構22之長度，因而得以達到天線運作之需求，且能使該電子封裝件2符合微小化之需求。
又，該封裝材23可用於固定該金屬架22a，使該延伸部220位於固定高度而能確保天線穩定性，且利用該封裝 材23之介電係數能縮小該天線結構22所需之電氣長度。
另外，藉由將金屬片摺疊成立體化金屬架22a，再將該延伸部220架設於該承載件20上，使該延伸部220對應第二區域B之邊緣延伸，以於製程中，該延伸部220能與該電子元件21整合製作，亦即一同進行封裝，使該封裝材23能覆蓋該電子元件21、緩衝部25,35a,35b,35c與該天線結構22，故封裝製程用之模具能對應該承載件20之尺寸，因而有利於封裝製程。
本發明復提供一種電子封裝件2，其包括：一承載件20、一設於該承載件20上之電子元件21、一設於該承載件20上之天線結構22以及設於該承載件20上之緩衝部25,35a,35b,35c。
所述之承載件20係具有複數線路結構200以電性連接該電子元件21。
所述之電子元件21係電性連接該承載件20之線路結構200。
所述之天線結構22係電性連接該承載件20，其中，該天線結構22包含一立設於該承載件20上之金屬架22a及至少一佈設於該承載件20上且電性連接該金屬架22a之導線22c。
所述之緩衝部25,35a,35b,35c係遮蓋該導線22c且未電性連接該天線結構22。
於一實施例中，該天線結構22以其導線22c電性連接該承載件20。
於一實施例中，該天線結構22之作用頻率係為2.44GHz。
於一實施例中，該金屬架22a具有一延伸部220與至少一支撐部221，該延伸部220藉由該支撐部221架設於該承載件20上。例如，該緩衝部25,35a,35b,35c係位於該延伸部220與該導線22c之間，進一步，該支撐部221係貫穿該緩衝部35c。
於一實施例中，該緩衝部25,35a,35b,35c係為絕緣體，如介電材，其介電係數為5至15。
於一實施例中，該緩衝部25,35a,35b,35c係接觸該金屬架22a之支撐部221。
於一實施例中，該緩衝部35a係接觸該金屬架22a之延伸部220。
於一實施例中，該緩衝部35b係遮蓋部分該導線22c。
於一實施例中，所述之電子封裝件2復包括封裝材23，係形成於該承載件20上以包覆該電子元件21、該緩衝部25,35a,35b,35c與該天線結構22。
於一實施例中，所述之電子封裝件2復包括一形成於該承載件20上之屏蔽結構24，係遮蓋該電子元件21而未遮蓋該天線結構22及該緩衝部25,35a,35b,35c。
綜上所述，本發明之電子封裝件中，主要藉由該緩衝部遮蔽該導線之設計，以有效降低(或減緩)該導線之發射波速，而降低發射波長，故該電子封裝件在該承載件之有限空間中能使該天線結構幅射出所需之作用頻率。
再者，藉由立體式天線結構取代習知平面式天線結構之設計，因而無需於該承載件之表面上增加佈設區域，即能增加該天線結構之長度，達到天線運作之需求。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。

Claims (12)

  1. 一種電子封裝件，係包括：承載件；至少一電子元件，係設於該承載件上；天線結構，係設於該承載件上並電性連接該承載件，其中，該天線結構包含立設於該承載件上之金屬架及設於該承載件上且電性連接該金屬架之導線；以及緩衝部，係遮蓋該導線且未電性連接該天線結構，亦未接觸該電子元件。
  2. 如申請專利範圍第1項所述之電子封裝件，其中，該天線結構以該導線電性連接該承載件。
  3. 如申請專利範圍第1項所述之電子封裝件，其中，該天線結構之作用頻率係為2.44GHz。
  4. 如申請專利範圍第1項所述之電子封裝件，其中，該金屬架包含有延伸部與至少一支撐部，該延伸部藉由該支撐部架設於該承載件上。
  5. 如申請專利範圍第4項所述之電子封裝件，其中，該緩衝部係位於該延伸部與該導線之間。
  6. 如申請專利範圍第4項所述之電子封裝件，其中，該支撐部係貫穿該緩衝部。
  7. 如申請專利範圍第1項所述之電子封裝件，其中，該緩衝部係為絕緣體。
  8. 如申請專利範圍第7項所述之電子封裝件，其中，該緩衝部係為介電材，其介電係數為5至15。
  9. 如申請專利範圍第1項所述之電子封裝件，其中，該緩衝部係接觸該金屬架。
  10. 如申請專利範圍第1項所述之電子封裝件，其中，該緩衝部係遮蓋部分該導線或遮蓋全部該導線。
  11. 如申請專利範圍第1項所述之電子封裝件，復包括封裝材，係形成於該承載件上以包覆該電子元件、該緩衝部與該天線結構。
  12. 如申請專利範圍第1項所述之電子封裝件，復包括形成於該承載件上且遮蓋該電子元件之屏蔽結構。
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