TWI652320B - 半導體基板用潤濕劑及研磨用組合物 - Google Patents

半導體基板用潤濕劑及研磨用組合物 Download PDF

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Publication number
TWI652320B
TWI652320B TW103145560A TW103145560A TWI652320B TW I652320 B TWI652320 B TW I652320B TW 103145560 A TW103145560 A TW 103145560A TW 103145560 A TW103145560 A TW 103145560A TW I652320 B TWI652320 B TW I652320B
Authority
TW
Taiwan
Prior art keywords
less
wetting agent
semiconductor substrate
polishing composition
present
Prior art date
Application number
TW103145560A
Other languages
English (en)
Chinese (zh)
Other versions
TW201533185A (zh
Inventor
松下隆幸
Original Assignee
日商霓塔哈斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商霓塔哈斯股份有限公司 filed Critical 日商霓塔哈斯股份有限公司
Publication of TW201533185A publication Critical patent/TW201533185A/zh
Application granted granted Critical
Publication of TWI652320B publication Critical patent/TWI652320B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/02—Oxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08B—POLYSACCHARIDES; DERIVATIVES THEREOF
    • C08B11/00—Preparation of cellulose ethers
    • C08B11/02—Alkyl or cycloalkyl ethers
    • C08B11/04—Alkyl or cycloalkyl ethers with substituted hydrocarbon radicals
    • C08B11/08—Alkyl or cycloalkyl ethers with substituted hydrocarbon radicals with hydroxylated hydrocarbon radicals; Esters, ethers, or acetals thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L1/00—Compositions of cellulose, modified cellulose or cellulose derivatives
    • C08L1/08—Cellulose derivatives
    • C08L1/26—Cellulose ethers
    • C08L1/28—Alkyl ethers
    • C08L1/284—Alkyl ethers with hydroxylated hydrocarbon radicals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW103145560A 2013-12-25 2014-12-25 半導體基板用潤濕劑及研磨用組合物 TWI652320B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013267255A JP6266337B2 (ja) 2013-12-25 2013-12-25 半導体基板用濡れ剤及び研磨用組成物
JP2013-267255 2013-12-25

Publications (2)

Publication Number Publication Date
TW201533185A TW201533185A (zh) 2015-09-01
TWI652320B true TWI652320B (zh) 2019-03-01

Family

ID=53478634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103145560A TWI652320B (zh) 2013-12-25 2014-12-25 半導體基板用潤濕劑及研磨用組合物

Country Status (5)

Country Link
JP (1) JP6266337B2 (fr)
KR (1) KR102267568B1 (fr)
CN (1) CN105849219B (fr)
TW (1) TWI652320B (fr)
WO (1) WO2015098777A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7026043B2 (ja) * 2016-08-02 2022-02-25 株式会社フジミインコーポレーテッド シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法
WO2018025655A1 (fr) * 2016-08-02 2018-02-08 株式会社フジミインコーポレーテッド Concentré de composition pour meulage de dégrossissage de tranche de silicium
CN109996853A (zh) 2016-11-22 2019-07-09 福吉米株式会社 研磨用组合物
TWI787224B (zh) 2016-12-28 2022-12-21 日商日揮觸媒化成股份有限公司 二氧化矽粒子分散液之製造方法
KR102495158B1 (ko) 2017-01-20 2023-02-01 닛키 쇼쿠바이카세이 가부시키가이샤 실리카 입자 분산액 및 그 제조 방법
US20200010727A1 (en) 2017-02-20 2020-01-09 Fujimi Incorporated Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate
KR102513062B1 (ko) 2017-03-31 2023-03-22 닛키 쇼쿠바이카세이 가부시키가이샤 실리카 입자 분산액의 제조 방법
US11939491B2 (en) 2019-03-27 2024-03-26 Fujimi Incorporated Method of polishing object to be polished containing material having silicon-silicon bond

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7211122B2 (en) 2002-09-30 2007-05-01 Fujimi Incorporated Polishing composition and rinse composition

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP4532149B2 (ja) * 2004-03-30 2010-08-25 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
JP2008078233A (ja) * 2006-09-19 2008-04-03 Nissan Chem Ind Ltd 研磨用組成物
WO2009041697A1 (fr) * 2007-09-28 2009-04-02 Nitta Haas Incorporated Composition de polissage
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
JP5575735B2 (ja) 2008-07-03 2014-08-20 株式会社フジミインコーポレーテッド 研磨用組成物濃縮物
SG187691A1 (en) * 2010-08-03 2013-03-28 Basf Se Carrier fluids for abrasives

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7211122B2 (en) 2002-09-30 2007-05-01 Fujimi Incorporated Polishing composition and rinse composition

Also Published As

Publication number Publication date
KR20160102198A (ko) 2016-08-29
JP2015124231A (ja) 2015-07-06
WO2015098777A1 (fr) 2015-07-02
CN105849219A (zh) 2016-08-10
CN105849219B (zh) 2018-11-23
TW201533185A (zh) 2015-09-01
KR102267568B1 (ko) 2021-06-18
JP6266337B2 (ja) 2018-01-24

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