TWI649569B - Method for checking the continuity of electrical characteristics of electronic components of wafers - Google Patents

Method for checking the continuity of electrical characteristics of electronic components of wafers Download PDF

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TWI649569B
TWI649569B TW104112571A TW104112571A TWI649569B TW I649569 B TWI649569 B TW I649569B TW 104112571 A TW104112571 A TW 104112571A TW 104112571 A TW104112571 A TW 104112571A TW I649569 B TWI649569 B TW I649569B
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electronic component
wafer
electrical characteristics
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TW201602599A (en
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野中智
藤田清久
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日商慧萌高新科技有限公司
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Abstract

提供不會隨著檢查工程之延長而可以抑制晶片電子零件之電特性之連續性的檢查方法實施時被發現的檢查精度下降的方法。 Provided is a method for reducing the inspection accuracy which is found when the inspection method which can suppress the continuity of the electrical characteristics of the electronic components of the wafer without the extension of the inspection process.

屬於使用在表面同心圓狀地形成三列以上之透孔之列的晶片電子零件搬運圓盤的晶片電子零件之電特性之連續性檢查方法,其係組入下述操作的方法:藉由在測量被收容於在晶片電子零件搬運圓盤之半徑方向排列一列之各透孔的晶片電子零件之內之一個晶片電子零件之電特性之期間,對與其他之一個或者更多之晶片電子零件接觸之電極端子施加直流電流,除去生成在該電極端子之前端的氧化物皮膜。 A method for inspecting electrical characteristics of a wafer electronic component using a wafer electronic component transporting disk in which three or more rows of through holes are formed concentrically on the surface, which is a method of assembling the following operation: Measuring the electrical characteristics of one of the electronic components of the wafer contained in the electronic components of the wafers arranged in a row in the radial direction of the electronic component handling disk of the wafer, and contacting one or more other electronic components of the wafer A direct current is applied to the electrode terminal to remove the oxide film formed at the front end of the electrode terminal.

Description

晶片電子零件之電特性的連續性檢查方法 Method for checking the continuity of electrical characteristics of electronic components of wafers

本發明係關於使用自動化之晶片電子零件檢查分選裝置以高速且連續性地檢查大量之晶片電子零件之電特性的方法。 The present invention relates to a method for inspecting the electrical characteristics of a large number of wafer electronic parts at high speed and continuously using an automated wafer electronic part inspection sorting apparatus.

隨著行動電話、智慧型手機、液晶電視、電子遊戲機等之小型電子產品之生產量的增加,組裝於如此之電子產品之微小的晶片電子零件之生產量顯著增加。晶片電子零件之大部分係由本體部和在本體部之相向的兩端面分別具有的電極所構成。就以如此之構成之晶片電子零件之例而言,可以舉出晶片電容器(也稱為晶片電容),晶片電阻器(包含晶片變阻器)及晶片電感器。 With the increase in the production of small electronic products such as mobile phones, smart phones, LCD TVs, and electronic game machines, the production of tiny chip electronic components assembled in such electronic products has increased significantly. Most of the electronic components of the wafer are composed of a body portion and electrodes respectively provided on opposite end faces of the body portion. Examples of the wafer electronic component thus constituted include a wafer capacitor (also referred to as a wafer capacitor), a wafer resistor (including a wafer varistor), and a chip inductor.

近年來,因應組裝晶片電子零件之電子產品的更小型化,還有組裝於電子產品之晶片電子零件之數量的增加,晶片電子零件極端地變小。例如,針對晶片電容器,近年來使用極小之尺寸(例如,被稱為0402晶片,0.2mm×0.2mm×0.4mm之尺寸)的電容器。如此之微小之晶片電子零件係藉由大量生產,一批量以數萬~數十萬個 的單位來生產。 In recent years, in response to the miniaturization of electronic products for assembling electronic components of wafers, and the increase in the number of electronic components of wafers assembled in electronic products, electronic components of wafers have become extremely small. For example, for wafer capacitors, capacitors having a very small size (for example, a size called 0402 wafer, 0.2 mm × 0.2 mm × 0.4 mm) have been used in recent years. Such tiny chip electronic parts are produced in large quantities, ranging from tens of thousands to hundreds of thousands in batches. The unit comes to production.

在組裝晶片電子零件之電子產品中,為了降低由於晶片電子零件之缺陷所引起的電子產品之不良品率,針對大量製造之晶片電子零件進行全數檢查為一般性。例如,針對晶片電容器,針對其全數,進行靜電電容或洩漏電流等之電特性的檢查。 In electronic products in which electronic components for wafers are assembled, in order to reduce the defective rate of electronic products due to defects in electronic components of the wafers, it is common to perform a total inspection of a large number of electronic components for wafers. For example, for the wafer capacitor, inspection of electrical characteristics such as electrostatic capacitance or leakage current is performed for all of the wafer capacitors.

大量的晶片電子零件之電特性之檢查必須高速進行,就以用以自動性地進行其高速之檢查的裝置而言,近年來,一般使用具備形成有多數透孔之晶片電子零件搬運圓盤(晶片電子零件暫時保持板)之晶片電子零件之電特性之檢查和用以分選之自動化裝置(即是,晶片電子零件檢查分選裝置)。該晶片電子零件搬運圓盤通常在暫時性地收容保持檢查對象之晶片電子零件之多數透孔沿著圓周以三列以上之複數列被排列的狀態下被形成。而且,於該晶片電子零件檢查分選裝置之使用時,處於旋轉狀態之晶片電子零件搬運圓盤之透孔暫時性地收容保持晶片電子零件之後,使在被保持於其晶片電子零件搬運圓盤之晶片電子零件,沿著該晶片電子零件搬運圓盤之旋轉路徑而被附設的一對電極端子(檢查用接觸端子)接觸於晶片電子零件之各電極而測量該晶片電子零件之特定的電特性,接著根據其測量結果,以從晶片電子零件搬運圓盤之透孔被收容至特定容器之方式使晶片電子零件排出而實施分選(或分類)之作業。 In the inspection of the electrical characteristics of a large number of electronic components of a chip, it is necessary to perform the inspection of the high-speed inspection automatically. In recent years, a wafer electronic component carrying disk having a plurality of through holes is generally used ( The electronic component of the wafer electronic component temporarily holds the electrical characteristics of the wafer electronic component and the automated device for sorting (ie, the wafer electronic component inspection sorting device). The wafer electronic component transporting disk is usually formed in a state in which a plurality of through holes for temporarily holding the electronic components of the wafer to be inspected are arranged in a plurality of rows of three or more rows along the circumference. Moreover, when the wafer electronic component inspection sorting device is used, the through hole of the wafer electronic component transporting disk in the rotating state temporarily accommodates the electronic component of the wafer, and is held in the electronic component carrying disk of the wafer. a chip electronic component, a pair of electrode terminals (inspection contact terminals) attached along a rotation path of the wafer electronic component transporting disk are in contact with respective electrodes of the chip electronic component to measure a specific electrical characteristic of the electronic component of the chip Then, according to the measurement result, the electronic component of the wafer is discharged from the through hole of the wafer electronic component transporting disk to be stored in a specific container, and the sorting (or sorting) operation is performed.

即是,被自動化之最近的晶片電子零件之檢 查分選裝置可以稱為包含有下述構件之電子零件檢查分選裝置:基台、可旋轉地被樞軸支撐於基台之晶片電子零件搬運圓盤(但是,在該晶片電子零件搬運圓盤,沿著圓周形成有三列以上可以暫時性地收容在相向之端面分別具有電極之晶片電子零件的透孔),還有沿著該晶片電子零件搬運圓盤之旋轉路徑而順序設置之使晶片電子零件供給收容至該晶片電子零件搬運圓盤之透孔的晶片電子零件供給收容部(供給收容區域)、進行晶片電子零件之電特性之檢查的晶片電子零件電特性檢查部(檢查區域),還有根據檢查結果對檢查完之晶片電子零件進行分類之晶片電子零件分類部(分類區域)。 That is, the most recent inspection of the electronic components of the wafer The sorting device may be referred to as an electronic component inspection sorting device including: a base, a wafer electronic component transporting disc rotatably pivotally supported on the base (however, the electronic component handling disc on the wafer) And three or more rows of through holes formed in the opposite end faces of the wafer electronic components having electrodes, and the wafer electronic circuits are sequentially disposed along the rotation path of the electronic component carrying disks of the wafers The chip is supplied with a chip electronic component supply accommodating portion (supply accommodating region) that is accommodated in the through hole of the wafer electronic component transporting disk, and an electronic component electrical property inspection unit (inspection region) for performing electrical property inspection of the electronic component of the wafer. There is a wafer electronic component classification section (classification area) for classifying the electronic components of the wafer to be inspected based on the inspection result.

例如,於進行晶片電容器之靜電電容之檢查時,在電特性檢查部,從晶片電子零件檢查分選裝置所具備之檢查器(電特性測量裝置)經檢查用電極端子,對晶片電容器施加持有特定頻率之檢查用電壓。而且,藉由該檢查用電壓之施加,以檢查器檢測出在晶片電容器產生之電流的電流值,根據該檢測電流值和檢查用電壓之電壓值,進行檢查對象之晶片電容器之靜電電容之檢查。 For example, in the inspection of the electrostatic capacitance of the wafer capacitor, the electrical property inspection unit holds the wafer capacitor from the inspection electrode terminal (the electrical property measuring device) included in the wafer electronic component inspection sorting device. The voltage for inspection at a specific frequency. Further, by the application of the voltage for inspection, the inspector detects the current value of the current generated in the wafer capacitor, and performs the inspection of the electrostatic capacitance of the wafer capacitor to be inspected based on the detected current value and the voltage value of the inspection voltage. .

就以晶片電子零件檢查分選裝置之例而言,可以舉出記載於專利文獻1之裝置。即是,在專利文獻1中,記載著連續性檢查晶片電子零件之電特性的方法之改良方法,其包含下述工程:使用上述構成之晶片電子零件檢查分選裝置,在使分別根據相同規格而被製造成表示特定之相同電特性的檢查對象之晶片電子零件互相接近配置 之狀態下,收容保持於晶片電子零件搬運圓盤之透孔,接著,將檢查器分別電性連接於晶片電子零件,然後從該檢查器分別對晶片電子零件施加檢查用電壓,藉由該檢查用電壓之施加,以檢查器檢測出在各晶片電子零件上產生的電流值。 An example of the wafer electronic component inspection sorting apparatus is the apparatus described in Patent Document 1. In the patent document 1, a method for improving the electrical characteristics of the electronic component of the wafer is described, and the method includes the following steps: using the electronic component inspection and sorting device of the above-described configuration, and respectively, according to the same specification The electronic components of the wafer that are manufactured to indicate the specific electrical characteristics of the same are closely arranged to each other. In the state, the through hole of the electronic component transporting disk of the wafer is received, and then the inspector is electrically connected to the electronic component of the chip, and then the inspection voltage is applied to the electronic component of the chip from the inspection device, and the inspection is performed by the inspection device. With the application of voltage, the inspector detects the current value generated on the electronic components of each wafer.

另外,在專利文獻2揭示有為了除去於進行電子零件之電阻測量時引起其電阻測量之精度下降的生成於電子零件之電極面的氧化皮膜等之高電阻之雜質,將電壓以直流電流施加至其氧化皮膜之方法為具有效果。 Further, Patent Document 2 discloses that a high-resistance impurity such as an oxide film formed on an electrode surface of an electronic component is reduced in order to reduce the accuracy of resistance measurement when the resistance measurement of the electronic component is performed, and a voltage is applied to the DC current to the DC current. The method of oxidizing the film has an effect.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]WO2014/010623A1 [Patent Document 1] WO2014/010623A1

[專利文獻2]日本特開2006-30131號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2006-30131

於實施使用持有上述各種構成之晶片電子零件檢查分選裝置之晶片電子零件之檢查、分類操作時,首先使晶片電子零件搬運圓盤間歇性地旋轉,在該晶片電子零件搬運圓盤之旋轉停止之期間,在晶片電子零件供給收容部,將晶片電子零件收容在該晶片電子零件搬運圓盤之各列之透孔,接著,藉由該晶片電子零件搬運圓盤之間歇性的旋轉,使被收容在各列之透孔的晶片電子零件移動至 電特性檢查部,並在該電特性檢查部,使電性連接於電特性測量裝置(檢查器)之電極端子接觸於被收容於各列之透孔的各晶片電子零件,在該接觸狀態下,自動性地進行順序測量與該晶片電子零件搬運圓盤之半徑方向鄰接之透孔的晶片電子零件之電特性的操作,之後,重覆實施該晶片電子零件搬運圓盤之旋轉和在停止狀態下將晶片電子零件收容至透孔還有電特性之測量的操作。 When performing the inspection and classification operation of the electronic component of the wafer using the wafer electronic component inspection and sorting apparatus having the above various configurations, the wafer electronic component transporting disk is first intermittently rotated, and the disk electronic component carrying disk is rotated. During the cessation period, the chip electronic component is housed in the accommodating portion, and the chip electronic component is housed in the through hole of each row of the chip electronic component transporting disk, and then the intermittent rotation of the disk electronic component transporting disk is performed. The electronic components of the wafer that are housed in the through holes of each column are moved to In the electrical property inspection unit, the electrode terminals electrically connected to the electrical property measuring device (inspector) are brought into contact with the respective chip electronic components housed in the through holes of the respective columns, and in the contact state And automatically performing an operation of sequentially measuring electrical characteristics of the wafer electronic component of the through hole adjacent to the radial direction of the wafer electronic component transporting disk, and then repeatedly performing the rotation of the wafer electronic component carrying disk and in the stopped state The operation of accommodating the electronic components of the wafer to the through-hole and measuring the electrical characteristics.

本發明之發明者在進行研究使用至此所敘述的檢查分選裝置之晶片電子零件之電特性之連續性檢查方法的期間,注意到當在長期間持續如此之檢查時,有出現電特性之測量值之精度下降之情形,而進行用以調查其原因之研究。而且,根據其研究之結果,本發明者發現該電特性之測量值之精度下降的原因係為了進行測量,在與數量龐大的晶片電子零件高速且重覆接觸的電極端子(探針)之前端生成氧化物皮膜,產生了藉由其氧化物皮膜之生成而產生的電極端子之前端和晶片電子零件之電極面的接觸不良。 The inventors of the present invention have conducted a study to examine the continuity of the electrical characteristics of the electronic components of the wafers of the wafer sorting apparatus described herein, and note that the measurement of electrical characteristics occurs when such inspections are continued for a long period of time. A study to investigate the cause of the decrease in the accuracy of the value. Moreover, based on the results of the research, the inventors have found that the reason for the decrease in the accuracy of the measurement of the electrical characteristics is for the measurement, at the front end of the electrode terminal (probe) which is in high speed and repeated contact with a large number of wafer electronic parts. The oxide film is formed, and the contact failure between the front end of the electrode terminal and the electrode surface of the chip electronic component due to the formation of the oxide film is generated.

一般而言,為了除去生成在電子零件之電極面的氧化物皮膜,可以利用將電壓以直流電流施加至其氧化物皮膜之方法,揭示於上述專利文獻2。因此,本發明者係針對藉由對該電極端子以直流電流施加電壓來除去生成在電極端子(探針)之前端的氧化物皮膜。即是,研究有加追下述工程的改良方法:於進行檢查對象之晶片電子零件之電特性之測量之前,或是測量之後,在使電極端子 接觸於晶片電子零件之電極面之狀態下,施加電壓,依此除去電極端子之前端之氧化物皮膜。而且,本發明者根據其研究之結果,確認出藉由追加用以除去如此之電極端子之前端的氧化物皮膜的工程,可以除去生成在期待之電極端子之前端的氧化物皮膜。 In general, in order to remove the oxide film formed on the electrode surface of the electronic component, a method of applying a voltage to the oxide film by a direct current can be disclosed in Patent Document 2 described above. Therefore, the inventors of the present invention have removed the oxide film formed at the front end of the electrode terminal (probe) by applying a voltage to the electrode terminal with a direct current. That is, the research has improved the following methods: before the measurement of the electrical characteristics of the electronic components of the wafer to be inspected, or after the measurement, the electrode terminals are made. A voltage is applied in contact with the electrode surface of the electronic component of the wafer, thereby removing the oxide film at the front end of the electrode terminal. Further, according to the results of the study, the inventors have confirmed that the oxide film formed at the front end of the desired electrode terminal can be removed by adding a process for removing the oxide film at the front end of the electrode terminal.

但是,同時也證明在晶片電子零件之電特性之連續性檢查方法之工程中組入上述氧化物皮膜之除去工程會產生問題。即是,使用如上述之檢查分選裝置之晶片電子零件之電特性之連續性的檢查方法因係以高速實施數量龐大的晶片電子零件之檢查為目的而被開發出的方法,故在其檢查作業追加上述電極端子之氧化物皮膜之除去工程,必然地會引起檢查所需之時間的延長,因此對晶片電子零件之自動化檢查的工業性實施不利。 However, it has also been confirmed that the removal of the above oxide film in the process of the continuity inspection method for the electrical characteristics of the electronic components of the wafer causes problems. In other words, the inspection method using the continuity of the electrical characteristics of the electronic components of the wafers of the above-described inspection sorting apparatus is developed for the purpose of performing inspection of a large number of electronic components of the wafer at a high speed, and therefore, the inspection is performed. The addition of the oxide film of the electrode terminal to the operation inevitably leads to an increase in the time required for the inspection. Therefore, the industrial implementation of the automated inspection of the electronic component of the wafer is disadvantageous.

因此,本發明者更進一步研究之結果,找出在測量被收容在與晶片電子零件搬運圓盤之半徑方向鄰接之各透孔的晶片電子零件和處於接觸狀態之電極端子內之一個晶片電子零件之電特性之期間,對與其他之一個或者更多之晶片電子零件(為了進行電特性之測量而待機的晶片電子零件)接觸之電極端子施加直流電流,進行該電極端子之前端之氧化物皮膜之除去,依此不會引起晶片電子零件之檢查作業時間之延長,在晶片電子零件之電特性之連續性檢查方法組入電極端子之前端之氧化物皮膜之除去工程。本發明係根據藉由如此本發明者發現的新見解而完成的發明。 Therefore, the inventors have further studied the results of finding a wafer electronic component in the electrode terminal that is accommodated in each of the through holes adjacent to the radial direction of the wafer electronic component carrying disk, and a wafer electronic component in the contact electrode terminal. During the electrical characteristics, a direct current is applied to the electrode terminals that are in contact with one or more other chip electronic components (wafer electronic components that are standby for measurement of electrical characteristics), and the oxide film at the front end of the electrode terminal is applied. In addition, the inspection time of the electronic component of the wafer is not prolonged, and the method of checking the continuity of the electrical characteristics of the electronic component of the wafer is incorporated into the electrode film before the electrode terminal. The present invention is based on the invention accomplished by the novel findings discovered by the inventors of the present invention.

因此,本發明係使在表面同心圓狀地形成至少三列之透孔之列,且以能夠進行間歇性旋轉之方式在同心圓之中心被樞軸支撐於基台而構成的晶片電子零件搬運圓盤間歇性旋轉,且在該晶片電子零件搬運圓盤之旋轉停止之期間,在晶片電子零件供給收容部,將晶片電子零件收容在該晶片電子零件搬運圓盤之各列之透孔,接著藉由該晶片電子零件搬運圓盤之間歇性旋轉,使被收容在各列之透孔的晶片電子零件移動至電特性檢查部,且在該電特性檢查部,使電性連接於電特性測量裝置之電極端子接觸於被收容於在各列之半徑方向排列一列之透孔的各晶片電子零件,在其接觸狀態下,順序測量被收容於在該晶片電子零件搬運圓盤之半徑方向排列一列之透孔的晶片電子零件之電特性,之後,重覆實施在該晶片電子零件搬運圓盤之旋轉和停止狀態下將晶片電子零件收容至透孔還有電特性之測量,該晶片電子零件之電特性的連續性檢查方法之特徵在於:藉由在測量被收容於在該晶片電子零件圓盤之半徑方向排列一列之各透孔的晶片電子零件之內之一個的晶片電子零件之電特性之期間,對與其他之一個或者更多之晶片電子零件接觸之電極端子施加直流電流,除去生成在該電極端子之前端的氧化物皮膜。 Therefore, the present invention is a wafer electronic component handling in which at least three rows of through holes are formed concentrically on the surface and pivotally supported on the base at the center of the concentric circle so as to be intermittently rotatable. The disk is intermittently rotated, and while the rotation of the electronic component transporting disk of the wafer is stopped, the electronic component supply portion of the wafer is housed in the through hole of each row of the electronic component carrying disk of the wafer, and then By intermittently rotating the wafer electronic component transporting disk, the electronic components of the wafer accommodated in the through holes of the respective rows are moved to the electrical property inspection portion, and the electrical property inspection portion is electrically connected to the electrical characteristic measurement. The electrode terminals of the device are in contact with the electronic components of the wafers that are accommodated in the through holes arranged in the radial direction of each column, and in the contact state, the sequential measurement is arranged in a row arranged in the radial direction of the electronic component carrying disk of the wafer. The electrical characteristics of the through-hole wafer electronic component, and then repeated implementation of the wafer electronics in the rotating and stopped state of the wafer electronic component handling disk The device is accommodated in the through hole and has electrical characteristics. The method for checking the electrical characteristics of the electronic component of the chip is characterized in that: by measuring a row arranged in a radial direction of the disk of the electronic component of the wafer During the electrical characteristics of the chip electronic component of one of the wafer electronic components of the hole, a direct current is applied to the electrode terminal that is in contact with the other one or more of the chip electronic components, and the oxide film formed at the front end of the electrode terminal is removed. .

本發明之晶片電子零件之電特性之連續性檢查方法之最佳實施態樣如同下述。 The preferred embodiment of the method for inspecting the electrical characteristics of the electronic components of the wafer of the present invention is as follows.

(1)晶片電子零件為在頂部和底部各具備電極面之柱狀的晶片電子零件,該電極端子係由分別與該晶片電子 零件之頂部之電極面和底部之電極面接觸之至少一對探針所構成。 (1) The chip electronic component is a column-shaped chip electronic component having electrode faces at the top and the bottom, and the electrode terminal is respectively connected to the chip electronic The electrode surface at the top of the part and the electrode surface of the bottom are in contact with at least one pair of probes.

(2)該電極端子係由分別電性連接於電特性測量裝置之Hcur、Hpot、Lcur、Lpot之各端子的四根探針所構成。 (2) The electrode terminal is composed of four probes electrically connected to respective terminals of Hcur, Hpot, Lcur, and Lpot of the electrical property measuring device.

因藉由使用本發明之晶片電子零件之電特性之連續檢查方法,可自動性迴避成為引起電特性之測量精度下降之原因的電極端子之前端的氧化物皮膜等之汙染物之蓄積,故提升大量之微小晶片電子零件之電特性之高速且高精度之檢查分選功能。 By using the continuous inspection method of the electrical characteristics of the electronic component of the wafer of the present invention, the accumulation of contaminants such as an oxide film at the front end of the electrode terminal, which causes a decrease in the measurement accuracy of the electrical characteristics, can be automatically avoided. The high-speed and high-precision inspection sorting function of the electrical characteristics of the microchip electronic components.

10‧‧‧晶片電子零件檢查分選裝置 10‧‧‧Whip electronic parts inspection and sorting device

11‧‧‧晶片電子零件搬運圓盤 11‧‧‧ wafer electronic parts handling disc

11a‧‧‧透孔 11a‧‧‧through hole

12a、12b、12c、12d、12e、12f‧‧‧一方之電極端子 Electrode terminals of 12a, 12b, 12c, 12d, 12e, 12f‧‧‧

13a、13b、13c、13d、13e、13f‧‧‧另一方之電極端子 13a, 13b, 13c, 13d, 13e, 13f‧‧‧ the other electrode terminal

14a、14b‧‧‧檢查器(電容計) 14a, 14b‧‧‧ inspector (capacitance meter)

15‧‧‧控制器 15‧‧‧ Controller

19‧‧‧晶片電子零件(晶片電容器) 19‧‧‧Whip electronic parts (wafer capacitors)

19a、19b、19c‧‧‧晶片電子零件(晶片電容器) 19a, 19b, 19c‧‧‧ Chip electronic parts (wafer capacitors)

19d、19e、19f‧‧‧晶片電子零件(晶片電容器) 19d, 19e, 19f‧‧‧ wafer electronic parts (wafer capacitors)

21‧‧‧電容器本體 21‧‧‧ Capacitor body

22a、22b‧‧‧電極 22a, 22b‧‧‧ electrodes

31‧‧‧晶片電子零件供給口 31‧‧‧ Chip electronic parts supply port

32‧‧‧料斗 32‧‧‧ hopper

33‧‧‧區隔壁 33‧‧‧ next door

41‧‧‧基台 41‧‧‧Abutment

42‧‧‧中心軸 42‧‧‧ center axis

43‧‧‧旋轉驅動裝置 43‧‧‧Rotary drive

45‧‧‧基板(基準台) 45‧‧‧Substrate (reference table)

101‧‧‧晶片電子零件供給收容部(供給收容區域) 101‧‧‧Whip electronic parts supply and storage unit (supply storage area)

102‧‧‧晶片電子零件電特性檢查部(檢查區域) 102‧‧‧Electronic characteristics inspection department for wafer electronic parts (inspection area)

103‧‧‧晶片電子零件電子零件分類部(分類區域) 103‧‧‧Whip electronic parts electronic parts classification department (classification area)

圖1為以晶片電容器之例表示檢查對象之晶片電子零件之構成的斜視圖。 Fig. 1 is a perspective view showing a configuration of a wafer electronic component to be inspected by an example of a wafer capacitor.

圖2為表示晶片電子零件檢查分選裝置之全體構成之例的前視圖。 Fig. 2 is a front elevational view showing an example of the overall configuration of a wafer electronic component inspection sorting apparatus.

圖3表示晶片電子零件檢查分選裝置之晶片電子零件搬運圓盤和在該晶片電子零件搬運圓盤之旋轉路徑沿著其旋轉方向依序被配置之晶片電子零件供給收容部(供給收容區域)、晶片電子零件電特性檢查部(檢查區域)還有 晶片電子零件分類部(分類區域)。 3 shows a wafer electronic component transporting disk of a wafer electronic component inspection sorting device, and a wafer electronic component supply accommodating portion (supply receiving region) in which the rotational path of the wafer electronic component transporting disk is sequentially arranged along the rotational direction thereof. , electronic component inspection unit (inspection area) of chip electronic parts Chip Electronic Parts Classification Department (Classification Area).

圖4為晶片電子零件搬運圓盤之前視圖,還有晶片電子零件搬運圓盤和其背後之支撐構造的剖面圖。 4 is a front elevational view of the wafer electronic component handling disk, and a cross-sectional view of the wafer electronic component handling disk and the support structure behind it.

圖5表示晶片電子零件供給收容部之前視圖和側面圖。並且,虛線係為了表示晶片電子零件供給收容部之內部構造而描繪。 Fig. 5 is a front view and a side view showing the electronic component supply and storage portion of the wafer. Further, the broken line is drawn to indicate the internal structure of the chip electronic component supply and storage unit.

圖6為表示晶片電子零件供給收容部所具備之料斗之內部構造的圖示,(a)為表示料斗之內部構造的前視圖,(b)表示料斗之側面剖面圖。並且,在後者之料斗之側面剖面圖,也表示晶片電子零件搬運圓盤和晶片電子零件搬運圓盤之背後所具備之基板(基準台)之側面的剖面。 6 is a view showing an internal structure of a hopper provided in a chip electronic component supply and storage unit, wherein (a) is a front view showing the internal structure of the hopper, and (b) is a side cross-sectional view showing the hopper. Further, the side cross-sectional view of the latter hopper also shows a cross section of the side surface of the substrate (reference table) provided behind the wafer electronic component transfer disk and the wafer electronic component transfer disk.

圖7為表示在晶片電子零件供給收容部對晶片電子零件搬運圓盤的透孔供給和收容晶片電子零件之狀態的剖面圖,表示在晶片電子零件搬運圓盤上沿著圓周而被圓弧狀排列配置的透孔收容晶片電子零件,且被搬運狀態的圖示。箭號表示晶片電子零件搬運圓盤之旋轉方向(透孔之移動方向)。 7 is a cross-sectional view showing a state in which a wafer electronic component supply accommodating portion supplies a through hole to a wafer electronic component transporting disk and accommodates a wafer electronic component, and shows that the wafer electronic component carrying disk is arc-shaped along a circumference. The through holes arranged in series are arranged to accommodate the electronic components of the wafer and are in a state of being transported. The arrow indicates the direction of rotation of the wafer electronic component handling disk (the direction of movement of the through hole).

圖8表示在檢查部檢查被收容在晶片電子零件搬運圓盤之透孔的晶片電子零件之電特性之狀態的剖面圖。 Fig. 8 is a cross-sectional view showing a state in which the inspection unit checks the electrical characteristics of the electronic components of the wafer housed in the through holes of the wafer electronic component transporting disk.

圖9表示被收容在晶片電子零件搬運圓盤之透孔,以分類部排出在檢查部的檢查結束之晶片電子零件之狀態的圖示。 FIG. 9 is a view showing a state in which the through-holes of the wafer electronic component transporting disk are accommodated in the sorting section and the electronic components of the wafer are completed after the inspection of the inspection section is completed.

圖10表示本發明之晶片電子零件之電特性之連續性 檢查方法中所採用的從檢查器(電容計)連接至電極端子(四端子)之電性系統之例的電路圖。 Figure 10 shows the continuity of electrical characteristics of the electronic components of the wafer of the present invention. A circuit diagram of an example of an electrical system in which an inspector (capacitance meter) is connected to an electrode terminal (four terminals) used in the inspection method.

圖11表示本發明之晶片電子零件之電特性之連續性檢查方法中所採用的從檢查器(電容計)連接至電極端子(二端子)之電性系統之例的電路圖。 Fig. 11 is a circuit diagram showing an example of an electrical system from an inspector (capacitance meter) connected to an electrode terminal (two terminals) used in the method for inspecting the electrical characteristics of the electronic component of the wafer of the present invention.

最初,針對有利於本發明之晶片電子零件之電特性之連續性檢查方法之實施而使用的晶片電子零件檢查分選裝置之構成例,一面參照附件圖面一面進行說明。 First, a configuration example of a wafer electronic component inspection sorting apparatus which is used for the implementation of the continuity inspection method for the electrical characteristics of the wafer electronic component of the present invention will be described with reference to the attached drawings.

圖1為表示以一般的晶片電容器為例表示檢查對象之晶片電子零件之構成的斜視圖,晶片電子零件(晶片電容器)19係由以介電體所構成之電容器本體21和與其兩端相向而被設置之一對電極22a、22b所構成。通常之晶片電容器19係使用陶瓷當作介電體的晶片陶磁電容器。並且,通常之晶片電子零件之電極之表面附設有用以將晶片電子零件安裝至各種基板之焊接層。 1 is a perspective view showing a configuration of a wafer electronic component to be inspected by taking a general wafer capacitor as an example. The chip electronic component (wafer capacitor) 19 is formed by a capacitor body 21 composed of a dielectric body and opposite ends thereof. One of the counter electrodes 22a and 22b is provided. A typical wafer capacitor 19 is a wafer ceramic capacitor using ceramic as a dielectric. Moreover, the surface of the electrode of the usual chip electronic component is provided with a solder layer for mounting the chip electronic component to various substrates.

以在本發明之晶片電子零件檢查分選裝置被檢查之晶片電子零件之代表例而言,可舉出晶片電容器、晶片電阻器(包含晶片變阻器)及晶片電感器。 Representative examples of the wafer electronic component to be inspected by the wafer electronic component inspection sorting apparatus of the present invention include a wafer capacitor, a wafer resistor (including a wafer varistor), and a wafer inductor.

檢查對象之晶片電子零件係以表示特定之相同電特性之方式,按照相同之規格而製造出。 The wafer electronic parts to be inspected are manufactured in accordance with the same specifications in such a manner as to indicate specific electrical characteristics.

因此,上述檢查對象之晶片電子零件雖然為相同之製造批量者為多,但是即使為在如此之相同之製造 批量之晶片電子零件中混合另外的批量的晶片電子零件者亦可。但是,兩者之製造批量之晶片電子零件係以表示互相相同之電特性之方式,按照相同之規格而製造出者(通常,係以販賣互相相同之製品為目的而製造出者)為一般。 Therefore, although the wafer electronic parts to be inspected are the same in the same manufacturing lot, even if they are manufactured in the same manner It is also possible to mix additional batches of wafer electronic components in batch wafer electronic parts. However, the wafer electronic parts of the manufacturing lot of the two are generally manufactured in accordance with the same specifications so that they are manufactured in the same manner (generally, they are manufactured for the purpose of selling products having the same product).

圖2表示晶片電子零件檢查分選裝置之構成例的前視圖,圖3表示晶片電子零件檢查分選裝置之晶片電子零件搬運圓盤和在該晶片電子零件搬運圓盤之旋轉路徑沿著其旋轉方向依序被配置之晶片電子零件供給收容部(供給收容區域)、晶片電子零件電特性檢查部(檢查區域)還有晶片電子零件分類部(分類區域)。圖2之晶片電子零件檢查分選裝置係在晶片電子零件搬運圓盤沿著其圓周排列6列多數之透孔的配置之裝置。並且,圖3之晶片電子零件搬運圓盤為了簡化,將晶片電子零件搬運圓盤以排列3列沿著其圓周的多數之透孔來表示。圖4(a)為圖3所示之晶片電子零件搬運圓盤之前視圖,還有圖4(b)為表示晶片電子零件搬運圓盤和其背後之支撐構造的剖面圖。 2 is a front view showing a configuration example of a wafer electronic component inspection sorting apparatus, and FIG. 3 is a view showing a wafer electronic component transporting disk of the wafer electronic component inspection sorting device and a rotation path of the electronic component carrying disk of the wafer rotating along the wafer The wafer electronic component supply storage portion (supply storage region), the wafer electronic component electrical property inspection portion (inspection region), and the wafer electronic component classification portion (classification region) are sequentially arranged. The wafer electronic component inspection sorting apparatus of Fig. 2 is a device in which a wafer electronic component carrying disk is arranged with a plurality of rows of through holes arranged along the circumference thereof. Further, in order to simplify the wafer electronic component transporting disk of Fig. 3, the wafer electronic component transporting disk is represented by a plurality of through holes arranged in three rows along the circumference thereof. Fig. 4 (a) is a front view of the wafer electronic component carrying disk shown in Fig. 3, and Fig. 4 (b) is a cross-sectional view showing the wafer electronic component carrying disk and the supporting structure behind it.

在圖2所示之晶片電子零件檢查分選裝置10中,以在圓盤狀材料之表面上沿著圓周排列配置而形成可以暫時性地收容晶片電子零件(例如,晶片電容器)之兩個以上之透孔11a的晶片電子零件搬運圓盤11,以可進行沿著圓盤之平面的旋轉之方式,被樞軸支撐於基台41。晶片電子零件搬運圓盤11之旋轉路徑係如圖3所示 般,設置有晶片電子零件之供給收容部(供給收容區域)101、晶片電子零件電特性之檢查部(檢查區域)102、還有晶片電子零件之分類部(分類區域)103。在檢查部102中,在接近晶片電子零件搬運圓盤11之各列之各透孔11a之兩開口部的位置具備有電特性測量用之電極端子。在電極端子電性連接有檢查器14a、14b,而且具備有以對檢查器供給與檢查處理有關之訊號之方式被電性連接於檢查器之控制器15。並且,檢查對象之晶片電子零件被放入至漏斗47,從晶片電子零件供給口31經料斗(參照圖5、6)而被供給至晶片電子零件搬運圓盤11之透孔。 In the wafer electronic component inspection and sorting apparatus 10 shown in FIG. 2, two or more wafer electronic components (for example, wafer capacitors) can be temporarily accommodated by arranging on the surface of the disk-shaped material along the circumference. The wafer electronic component transporting disk 11 of the through hole 11a is pivotally supported by the base 41 so as to be rotatable along the plane of the disk. The rotation path of the wafer electronic component handling disk 11 is as shown in FIG. In general, a supply accommodating portion (supply accommodating region) 101 for a wafer electronic component, an inspection portion (inspection region) 102 for electrical characteristics of a wafer electronic component, and a classification portion (classification region) 103 for a chip electronic component are provided. In the inspection unit 102, electrode terminals for measuring electrical characteristics are provided at positions close to the openings of the respective through holes 11a of the respective rows of the wafer electronic component transporting disks 11. The inspectors 14a and 14b are electrically connected to the electrode terminals, and the controller 15 is electrically connected to the inspector so as to supply a signal related to the inspection process to the inspector. Then, the electronic component of the wafer to be inspected is placed in the funnel 47, and is supplied from the wafer electronic component supply port 31 to the through hole of the wafer electronic component transporting disk 11 via the hopper (see FIGS. 5 and 6).

晶片電子零件搬運圓盤11之透孔11a通常在晶片電子零件搬運圓盤之表面,以複數之同心圓狀,被配置在將該同心圓予以等分割的位置上。 The through hole 11a of the wafer electronic component carrying disk 11 is usually placed on the surface of the wafer electronic component carrying disk in a plurality of concentric circles, and is disposed at a position where the concentric circles are equally divided.

在附件圖面所示之晶片電子零件檢查分選裝置10中,在晶片電子零件搬運圓盤11之中心和周緣之間設置有在直徑方向排列的合計6個的透孔,對被收容在各透孔之合計6個的每個晶片電子零件,進行晶片電子零件之電特性的檢查。在晶片電子零件搬運圓盤11之中心和周緣之間排列在直徑方向之透孔的數量以在3~20個之範圍內為佳,以在3~12個之範圍內為更佳。 In the wafer electronic component inspection sorting apparatus 10 shown in the attached drawing, a total of six through holes arranged in the diameter direction are provided between the center and the periphery of the wafer electronic component transporting disk 11 so as to be accommodated in each Each of the six electronic components of the through hole is inspected for electrical characteristics of the electronic components of the wafer. The number of through holes arranged in the diameter direction between the center and the periphery of the wafer electronic component carrying disk 11 is preferably in the range of 3 to 20, more preferably in the range of 3 to 12.

晶片電子零件搬運圓盤11係透過例如基板(基準台)45,還有中心軸42而可旋轉地被設置(固定)在基台41,藉由使被配設在其背面側之旋轉驅動裝 置43動作,使中心軸42之周圍間歇性地旋轉。 The wafer electronic component transporting disk 11 is rotatably provided (fixed) to the base 41 via, for example, a substrate (reference table) 45 and a center shaft 42, and is driven by rotation on the back side thereof. The operation 43 is performed to intermittently rotate the periphery of the center shaft 42.

在晶片電子零件搬運圓盤11之透孔11a,因在晶片電子零件供給收容部101檢查對象之晶片電子零件進行其電特性之檢查,故暫時性被收容。 In the through hole 11a of the wafer electronic component transporting disk 11, the electronic component of the wafer to be inspected by the chip electronic component supply and storage unit 101 is inspected for electrical characteristics, and is temporarily accommodated.

晶片電子零件供給收容部101之詳細構成表示在圖5和圖6。晶片電子零件供給收容部101被稱為料斗部,為用以將從外部由晶片電子零件供給口31被供給之晶片電子零件經料斗32而收容至晶片電子零件搬運圓盤11之透孔11a的區域。在圖5和圖6中,料斗32藉由區隔壁33使用以使晶片電子零件以3列圓弧狀地下降之3列的溝部分離而形成,以作為對被設置在晶片電子零件搬運圓盤11之3列(為了簡化成與圖3相同,以3列表示)之透孔群供給晶片電子零件的構成。藉由晶片電子零件供給口31被供給,在料斗32之內部沿著區隔壁33下降的晶片電子零件係在料斗32之底部附近,經被形成在基板(基準台)45之氣體吸引通路45a藉由也對晶片電子零件搬運圓盤11之透孔11a帶來強烈的吸引力而被吸引收容至透孔11a。並且,該晶片電子零件往晶片電子零件搬運圓盤11之透孔11a的吸引收容通常係在使晶片電子零件搬運圓盤成為靜止狀態之下進行。 The detailed configuration of the wafer electronic component supply accommodating portion 101 is shown in Figs. 5 and 6 . The chip electronic component supply accommodating portion 101 is referred to as a hopper portion, and is used for accommodating the wafer electronic component supplied from the outside from the wafer electronic component supply port 31 through the hopper 32 to the through hole 11a of the wafer electronic component conveying disk 11. region. In FIGS. 5 and 6, the hopper 32 is formed by separating the groove portions of the three rows of the electronic components of the wafer in three rows by the partition walls 33, and is disposed as a pair of wafer electronic component transporting discs. The through-hole group of 11 columns and 3 columns (in order to simplify the same as FIG. 3) is supplied to the wafer electronic component. The wafer electronic component supply port 31 is supplied, and the wafer electronic component descending along the partition wall 33 inside the hopper 32 is near the bottom of the hopper 32, and is borrowed by the gas suction passage 45a formed on the substrate (reference table) 45. The through hole 11a is also attracted to the through hole 11a of the wafer electronic component transporting disk 11 and is attracted to the through hole 11a. Further, the suction of the chip electronic component to the through hole 11a of the wafer electronic component transporting disk 11 is usually performed while the wafer electronic component transporting disk is in a stationary state.

圖7表示晶片電子零件朝晶片電子零件搬運圓盤11之透孔11a被吸引收容之狀態。即是,積體在料斗32之底部附近的晶片電子零件19係經被形成在基板(基準台)45之氣體吸引通路45a而藉由也對晶片電子 零件搬運圓盤11之透孔11a帶來強烈的吸引力,被吸引收容在透孔11a。並且,積體在該料斗32之底部附近的晶片電子零件19朝透孔11a吸引收容之時,在料斗32之底部附近從外部吹入空氣而生成氣流,使晶片電子零件19在攪拌狀態下浮游,因順暢地進行晶片電子零件之吸引收容故為佳。如此從外部吹入空氣至料斗32之底部附近例如可以利用圖6所示之空氣吹出37而進行。 Fig. 7 shows a state in which the chip electronic component is sucked and housed in the through hole 11a of the wafer electronic component carrying disk 11. That is, the wafer electronic component 19 in the vicinity of the bottom of the hopper 32 is formed in the gas suction path 45a formed in the substrate (reference table) 45 by also on the wafer electron The through hole 11a of the component carrying disk 11 brings a strong attraction force and is sucked and accommodated in the through hole 11a. Further, when the wafer electronic component 19 near the bottom of the hopper 32 is sucked into the through hole 11a, air is blown from the outside near the bottom of the hopper 32 to generate an air flow, so that the chip electronic component 19 floats while stirring. It is preferable to smoothly carry out the attraction and reception of the electronic components of the wafer. Thus, blowing air from the outside to the vicinity of the bottom of the hopper 32 can be performed, for example, by the air blowing 37 shown in FIG.

如上述般,在晶片電子零件搬運圓盤11之背側或裝置之後方側(在圖7之右側)配設有基板45。在基板45形成有分別在晶片電子零件搬運圓盤11之側的表面開口的複數氣體吸引通路45a。各個的氣體吸引通路係被連接對透孔供給強烈吸引力的氣體吸引裝置46。當使氣體吸引裝置46動作時,氣體吸引通路45a內之氣體被強烈吸引力吸引,被形成在晶片電子零件搬運圓盤11和基板45之間的間隙成為減壓狀態。 As described above, the substrate 45 is disposed on the back side of the wafer electronic component transporting disk 11 or on the rear side of the device (on the right side of FIG. 7). A plurality of gas suction passages 45a that are open on the surface of the side of the wafer electronic component transporting disk 11 are formed on the substrate 45. Each of the gas suction passages is connected to a gas suction device 46 that supplies a strong attraction to the through holes. When the gas suction device 46 is operated, the gas in the gas suction passage 45a is attracted by the strong suction force, and the gap formed between the wafer electronic component conveying disk 11 and the substrate 45 is in a decompressed state.

一面使晶片電子零件搬運圓盤11朝記載在圖7中之箭號所示之方向做間歇性旋轉,一面將晶片電子零件經晶片電子零件供給口31和料斗32而供給至晶片電子零件搬運圓盤之表面,使氣體吸引裝置46動作而使晶片電子零件搬運圓盤11和基板45之間的間隙成為減壓狀態時,在晶片電子零件搬運圓盤11之各透孔11a吸引收容晶片電子零件19。 While the wafer electronic component carrying disk 11 is intermittently rotated in the direction indicated by the arrow shown in FIG. 7, the wafer electronic component is supplied to the wafer electronic component handling circle through the chip electronic component supply port 31 and the hopper 32. When the gas suction device 46 is operated on the surface of the disk and the gap between the wafer electronic component transporting disk 11 and the substrate 45 is decompressed, the wafer electronic components are sucked and received in the respective through holes 11a of the wafer electronic component transporting disk 11. 19.

藉由上述晶片電子零件搬運圓盤11之間歇性之旋轉移動,被收容在晶片電子零件搬運圓盤11之透孔 11a之晶片電子零件19接著被送至圖2及圖3所示之檢查部102。並且,晶片電子零件搬運圓盤11和基板45之間的間隙係於晶片電子零件19朝透孔11a內收容完成之後,晶片電子零件搬運圓盤11旋轉,被收容在透孔11a之晶片電子零件19移動至檢查部102,又到達至分類部103為止,處於弱的減壓狀態。因此,在晶片電子零件供給收容部101被收容在晶片電子零件搬運圓盤11之透孔11a之晶片電子零件19,藉由晶片電子零件搬運圓盤11之後的旋轉,經由檢查部102而到達至分類部103為止,不會從透孔11a脫落。 Through the intermittent rotational movement of the wafer electronic component transporting disk 11, the through hole of the electronic component transporting disk 11 of the wafer is received. The wafer electronic component 19 of 11a is then sent to the inspection unit 102 shown in FIGS. 2 and 3. Further, the gap between the wafer electronic component transporting disk 11 and the substrate 45 is such that after the wafer electronic component 19 is housed in the through hole 11a, the wafer electronic component carrying disk 11 is rotated, and the chip electronic component housed in the through hole 11a is mounted. 19 moves to the inspection unit 102 and reaches the classification unit 103 again, and is in a weakly decompressed state. Therefore, the wafer electronic component 19 accommodated in the through hole 11a of the wafer electronic component transporting disk 11 in the wafer electronic component supply and storage unit 101 is rotated by the wafer electronic component transporting disk 11 and then passed through the inspection unit 102. The classification unit 103 does not fall off from the through hole 11a.

檢查部係如圖8所示般,為了將晶片電子零件電性連接於其電特性之檢查器,在接近晶片電子零件搬運圓盤11之透孔11a之兩開口部的位置,配置有分別以一對所構成的電極端子12a、13a、12b、13b、12c、13c、12d、13d、12e、13e、12f、13f。 As shown in FIG. 8, the inspection unit is disposed at a position close to the opening of the through hole 11a of the wafer electronic component transporting disk 11 in order to electrically connect the electronic component of the chip to the inspector having electrical characteristics. A pair of electrode terminals 12a, 13a, 12b, 13b, 12c, 13c, 12d, 13d, 12e, 13e, 12f, 13f are formed.

一方之電極端子(12a、其他)係經被配設在其周圍的電性絕緣性的筒體,而被固定在基板45。電極端子及基板45之晶片電子零件搬運圓盤側之表面通常藉由研磨加工等成為平滑的平面。 One of the electrode terminals (12a, others) is fixed to the substrate 45 via an electrically insulating cylindrical body disposed around the electrode terminal. The surface of the electrode terminal and the wafer electronic component transporting disk side of the substrate 45 is usually a smooth plane by polishing or the like.

另一方之電極端子(13a、其他)被固定在電極端子支撐板53。 The other electrode terminal (13a, others) is fixed to the electrode terminal support plate 53.

藉由使電極端子支撐板53移動至晶片電子零件搬運圓盤11之側,被支撐於電極端子支撐板53的電極端子(13a、其他)也移動晶片電子零件搬運圓盤11之 側。藉由該電極端子(13a,其他)之移動,晶片電子零件被夾在成為一對的電極端子(12a、13a、其他)之間而成為接觸狀態。因此,晶片電子零件之電極22a電性連接於電極端子(12a、其他),而且電極22b被電性連接於電極端子(13a、其他)。依此,晶片電子零件經成為一對之電極端子(12a、13a、其他),而被電性連接於檢查器。 By moving the electrode terminal support plate 53 to the side of the wafer electronic component transporting disk 11, the electrode terminal (13a, other) supported by the electrode terminal supporting plate 53 also moves the wafer electronic component carrying disk 11 side. By the movement of the electrode terminals (13a, others), the electronic components of the wafer are sandwiched between the pair of electrode terminals (12a, 13a, and others) to be in a contact state. Therefore, the electrode 22a of the chip electronic component is electrically connected to the electrode terminal (12a, others), and the electrode 22b is electrically connected to the electrode terminal (13a, others). Accordingly, the chip electronic component is electrically connected to the inspector via a pair of electrode terminals (12a, 13a, and others).

並且,與配置有成為一對之電極端子的晶片電子零件搬運圓盤之各透孔之兩開口部「接近的位置」係指於在各透孔收容有晶片電子零件之時,各電極端子電性連接於各晶片電子零件之電極的位置,或是成為各電極端子可移動之構成之時,藉由使各電極端子移動,電性連接於晶片電子零件之電極的位置之意。 Further, the "close position" between the two openings of the through-holes of the wafer electronic component transporting disk in which the pair of electrode terminals are disposed means that the electrode terminals are electrically connected when the through-holes contain the chip electronic components. When the electrodes are connected to the positions of the electrodes of the electronic components of the wafer or when the electrode terminals are movable, the positions of the electrodes of the electronic components of the wafer are electrically connected by moving the respective electrode terminals.

而且,在檢查部102中,針對被收容配置在晶片電子零件搬運圓盤11之直徑方向排列一列的6個的各晶片電子零件19a、19b、19c、19d、19e、19f,進行特定之電特性檢查。 In the inspection unit 102, specific electrical characteristics are performed for each of the six wafer electronic components 19a, 19b, 19c, 19d, 19e, and 19f that are arranged in a row in the diameter direction of the wafer electronic component transporting disk 11. an examination.

檢查電特性的晶片電子零件接著藉由晶片電子零件搬運圓盤11之間歇性旋轉移動,被送往圖2及圖3所示之晶片電子零件之分類部103。 The electronic component of the wafer inspecting the electrical characteristics is then sent to the sorting unit 103 of the electronic component of the wafer shown in FIGS. 2 and 3 by intermittent rotational movement of the wafer electronic component transporting disk 11.

如圖9所示般,在分類部103於晶片電子零件搬運圓盤11之表側或裝置之前面側(在圖9中為左側)配設有形成有複數個透孔61a之管件支撐蓋61。在管件支撐蓋61之各透孔61a連接有構成晶片電子零件19a 之排出通路的管件62。並且,在圖2中,僅表示被連接於管件支撐蓋61之各透孔61a的管件62中之一部的管件。 As shown in FIG. 9, the sorting unit 103 is provided with a tube support cover 61 on which a plurality of through holes 61a are formed on the front side of the wafer electronic component transporting disk 11 or on the front side of the apparatus (the left side in FIG. 9). The through-holes 61a of the tube supporting cover 61 are connected to constitute the chip electronic component 19a. The tube 62 of the discharge passage. Further, in Fig. 2, only the tube member connected to one of the tubes 62 of the respective through holes 61a of the tube support cover 61 is shown.

再者,配置在晶片電子零件搬運圓盤11之背側或裝置之後方側(在圖9中之右側)的基板45,係在分類部103之區域,形成有分別在晶片電子零件搬運圓盤11之側之表面開口的複數氣體供給通路45b。各個氣體供給通路45b被連接於加壓氣體供給裝置63。 Further, the substrate 45 disposed on the back side of the wafer electronic component transporting disk 11 or on the rear side of the device (on the right side in FIG. 9) is formed in the region of the sorting portion 103, and is formed in the wafer electronic component carrying disk. A plurality of gas supply passages 45b having a surface opening on the side of 11. Each of the gas supply passages 45b is connected to the pressurized gas supply device 63.

當使加壓氣體供給裝置63動作時,加壓氣體被供給至氣體供給通路45b,且加壓氣體被噴射至收容在晶片電子零件搬運圓盤11之透孔11a之晶片電子零件19a。依此,晶片電子零件被排出至管件62。 When the pressurized gas supply device 63 is operated, the pressurized gas is supplied to the gas supply path 45b, and the pressurized gas is ejected to the wafer electronic component 19a accommodated in the through hole 11a of the wafer electronic component transporting disk 11. Accordingly, the wafer electronic parts are discharged to the tube member 62.

晶片電子零件19a係通過例如圖2所示被形成在管件支撐蓋61之複數個透孔61a中,位於最外周側之合計10個透孔61a。該10個透孔61a分別經管件62而連接於晶片電子零件收容容器64。 The chip electronic component 19a is formed in a plurality of through holes 61a of the pipe support cover 61 as shown in FIG. 2, and has a total of ten through holes 61a on the outermost peripheral side. The ten through holes 61a are connected to the wafer electronic component storage container 64 via the tube member 62, respectively.

因此,在分類部103藉由透孔被排出之晶片電子零件係經連接於管件支撐蓋61之10個透孔61a的合計10根管件62中之任一者,根據檢查之結果證明的電特性,收容在事先決定的晶片電子零件收容容器64。 Therefore, the wafer electronic component discharged through the through hole in the classifying portion 103 is connected to the total of ten pipe members 62 connected to the ten through holes 61a of the pipe support cover 61, and the electricity is proved according to the result of the inspection. The characteristics are stored in a predetermined electronic component storage container 64.

接著,針對本發明之晶片電子零件之電特性的連續檢查方法中之特徵性操作的電極端子之前端的氧化物皮膜之除去操作,一面參照圖10一面予以詳細說明。 Next, the operation of removing the oxide film at the front end of the electrode terminal which is characteristically operated in the continuous inspection method for the electrical characteristics of the electronic component of the wafer of the present invention will be described in detail with reference to FIG.

圖10表示本發明之晶片電子零件之電特性之 連續性檢查方法中所採用的從檢查器連接至電極端子之電性系統(利用四端子法)之例的電路圖。圖10之電路圖係對圖2所示之檢查器(例如,電容計)14a進行直流電流之施加的電路圖,該直流電流之施加係用以進行被收容在圖8所示之晶片電子零件搬運圓盤之透孔的晶片電子零件之內的三組19a、19b、19c(在晶片電子零件搬運圓盤之半徑方向排列的狀態下被收容的透孔)之晶片電子零件之檢查(電特性之測量)和與各晶片電子零件之電極接觸的電極端子之前端的氧化物皮膜之除去,該電路所示係可以在各晶片電子零件19a、19b、19c接觸二對電極端子(即是,四端子)之狀態下順序實施直流電流之施加的電性電路,該直流電流之施加係用以進行晶片電子零件之電特性之測量和電極端子之前端的氧化物皮膜之除去。即是,該電性電路可以如藉由晶片電子零件之四端子法的電特性之測量電路,在各晶片電子零件之測量電路中,被設置成可以經連接切換開關連接直流電流施加用的電路(連結往外部電源的端子+DCV和端子-DCV的電路)。 Figure 10 shows the electrical characteristics of the electronic component of the wafer of the present invention. A circuit diagram of an example of an electrical system (using a four-terminal method) connected from an inspector to an electrode terminal used in the continuity inspection method. 10 is a circuit diagram of the application of a direct current to an inspector (eg, a capacitance meter) 14a shown in FIG. 2 for applying a wafer electronic component handling circle as shown in FIG. Inspection of electronic components of the wafers of the three sets of 19a, 19b, 19c (through holes accommodated in the radial direction of the wafer electronic component transporting disc) in the electronic components of the through-hole of the disk (measurement of electrical characteristics) And removing the oxide film at the front end of the electrode terminal that is in contact with the electrodes of the electronic components of the wafer, the circuit is shown to be capable of contacting the two pairs of electrode terminals (ie, four terminals) in each of the chip electronic components 19a, 19b, and 19c. In the state, an electric circuit for applying a direct current is sequentially applied, and the direct current is applied to measure the electrical characteristics of the electronic component of the wafer and remove the oxide film at the front end of the electrode terminal. That is, the electrical circuit can be configured as a circuit for applying a DC current through a connection switch in a measurement circuit of each chip electronic component, such as a measurement circuit for electrical characteristics of a four-terminal method of a wafer electronic component. (Connect the circuit to the external power supply terminal + DCV and terminal - DCV).

在圖10中,檢查器(電容計)14a具備有可以經連接切換開關而與晶片電子零件接觸之四個電極端子電性連接的四個端子(Hcur、Hpot、Lcur、Lpot)。 In Fig. 10, an inspector (capacitance meter) 14a is provided with four terminals (Hcur, Hpot, Lcur, Lpot) that can be electrically connected to four electrode terminals that are in contact with the wafer electronic components via a connection switch.

接著說明使用圖10所示之電性電路而進行的晶片電子零件之電特性測量之操作和除去電極端子之前端的氧化物皮膜之操作的例。在晶片電子零件搬運圓盤之半徑方向排列而被收容在晶片電子零件搬運圓盤之透孔之各 晶片電子零件19a、19b、19c接觸電極端子之狀態下,首先連接切換開關動作,與晶片電子零件19a接觸之四個電極端子和檢查器14a電性連接,測量晶片電子零件19a之電特性。另外,在進行該晶片電子零件19a之電特性之測量之期間,直流電路(連接端子+DCV和端子-DCV的電路)藉由連接切換開關之動作,被連接於與晶片電子零件19b還有晶片電子零件19c之雙方或其中之任一方連接的電極端子,進行直流電流之施加。藉由該直流電流之施加,除去與晶片電子零件19b還有晶片電子零件19c之雙方或其中之任一方連接之電極端子之前端之氧化物皮膜。 Next, an operation of measuring the electrical characteristics of the electronic component of the wafer and an operation of removing the oxide film at the front end of the electrode terminal using the electrical circuit shown in Fig. 10 will be described. Arranged in the radial direction of the wafer electronic component transporting disc and housed in the through hole of the wafer electronic component transporting disc In the state in which the chip electronic components 19a, 19b, and 19c are in contact with the electrode terminals, first, the switching operation is connected, and the four electrode terminals that are in contact with the chip electronic component 19a are electrically connected to the inspector 14a, and the electrical characteristics of the wafer electronic component 19a are measured. In addition, during the measurement of the electrical characteristics of the electronic component 19a of the wafer, the DC circuit (the circuit connecting the terminal + DCV and the terminal-DCV) is connected to the wafer electronic component 19b and the wafer by the operation of the connection switching switch. The electrode terminals connected to either or both of the electronic components 19c are applied with a direct current. By the application of the direct current, the oxide film at the front end of the electrode terminal connected to either or both of the chip electronic component 19b and the chip electronic component 19c is removed.

接著,藉由連接切換開關之動作,與晶片電子零件19b接觸之四個電極端子和檢查器14a電性連接,測量晶片電子零件19b之電特性。另外,在進行該晶片電子零件19b之電特性之測量之期間,直流電路(連接端子+DCV和端子-DCV的電路)藉由連接切換開關之動作,被連接於與晶片電子零件19c還有晶片電子零件19a之雙方或其中之任一方連接的電極端子,進行直流電流之施加。藉由該直流電流之施加,除去與晶片電子零件19c還有晶片電子零件19a之雙方或其中之任一方連接之電極端子之前端之氧化物皮膜。並且,針對已進行了上述晶片電子零件19a之電特性之測量和在同時期所實施的藉由對與其他的晶片電子零件接觸之電極端子施加直流電流而除去氧化物皮膜之操作的電極端子,亦可以省略重新施加直流電流。 Next, by connecting the switching switches, the four electrode terminals that are in contact with the wafer electronic component 19b are electrically connected to the inspector 14a, and the electrical characteristics of the wafer electronic component 19b are measured. In addition, during the measurement of the electrical characteristics of the electronic component 19b of the wafer, the DC circuit (the circuit connecting the terminal + DCV and the terminal-DCV) is connected to the wafer electronic component 19c and the wafer by the operation of the connection switching switch. The electrode terminals connected to either or both of the electronic components 19a are applied with a direct current. By the application of the direct current, the oxide film at the front end of the electrode terminal connected to either or both of the chip electronic component 19c and the chip electronic component 19a is removed. Further, an electrode terminal for performing an operation of removing the oxide film by applying a DC current to an electrode terminal that is in contact with another chip electronic component, which has been subjected to measurement of electrical characteristics of the chip electronic component 19a, and which is performed at the same time, It is also possible to omit re-application of DC current.

又接著,藉由連接切換開關之動作,與晶片電子零件19c接觸之四個電極端子和檢查器14a電性連接,測量晶片電子零件19c之電特性。另外,在進行該晶片電子零件19c之電特性之測量之期間,直流電路(連接端子+DCV和端子-DCV的電路)藉由連接切換開關之動作,被連接於與晶片電子零件19a還有晶片電子零件19b之雙方或其中之任一方連接的電極端子,進行直流電流之施加。藉由該直流電流之施加,除去生成在與晶片電子零件19a還有晶片電子零件19b之雙方或其中之任一方連接之電極端子之前端之氧化物皮膜。並且,針對已進行了上述晶片電子零件19a或晶片電子零件19b之電特性之測量和在同時期所實施的藉由對與其他的晶片電子零件接觸之電極端子施加直流電流而除去氧化物皮膜之操作的電極端子,亦可以省略重新施加直流電流。 Further, by connecting the switching switches, the four electrode terminals that are in contact with the chip electronic component 19c are electrically connected to the inspector 14a, and the electrical characteristics of the chip electronic component 19c are measured. Further, during the measurement of the electrical characteristics of the electronic component 19c of the wafer, the DC circuit (the circuit of the connection terminal + DCV and the terminal-DCV) is connected to the wafer electronic component 19a and the wafer by the operation of the connection switching switch. The electrode terminals connected to either or both of the electronic components 19b are applied with a direct current. The oxide film formed at the front end of the electrode terminal connected to either or both of the wafer electronic component 19a and the chip electronic component 19b is removed by the application of the DC current. Further, the measurement of the electrical characteristics of the wafer electronic component 19a or the wafer electronic component 19b and the application of the direct current to the electrode terminals in contact with the other wafer electronic components during the same period are performed to remove the oxide film. The electrode terminals that are operated may also omit the re-application of DC current.

如上述說明般,若藉由本發明之晶片電子零件之電特性之連續性檢查方法時,被收容在晶片電子零件搬運圓盤之半徑方向排列之透孔的一個晶片電子零件之電特性之測量中,藉由對與其他之一個或兩個以上之晶片電子零件之電極接觸的電極端子施加供給直流電流進行除去生成在電極端子之前端的氧化物皮膜。因此,可以不會引起檢查時間之延長地實施用以除去生成在電極端子之前端的氧化物皮膜的直流電流的施加操作。 As described above, when the continuity check method of the electrical characteristics of the electronic component of the wafer of the present invention is carried out, the electrical characteristics of one of the electronic components of the wafer which are accommodated in the radial direction of the wafer electronic component transporting disk are measured. The oxide film formed at the front end of the electrode terminal is removed by applying a direct current to the electrode terminal that is in contact with the electrode of one or more other electronic components of the wafer. Therefore, the application operation for removing the direct current that generates the oxide film at the front end of the electrode terminal can be performed without causing an extension of the inspection time.

並且,在本發明之晶片電子零件之電特性之連續性檢查方法中除去電極端子前端部之氧化物皮膜,即 使於使用其電極端子測量晶片電子零件之電特性後,藉由對該電極端子施加直流電流來實施亦可。即是,本發明之晶片電子零件之電特性之連續性檢查方法因使用被自動化之檢查裝置而高速並且連續地進行,故被使用於一個晶片電子零件之電特性之測量,接著藉由施加直流電流被進行氧化物皮膜之除去的電極端子,原樣地被使用於收容在相同列之透孔的下一個晶片電子零件之電特性的測量。 Further, in the method for inspecting the continuity of electrical characteristics of the electronic component of the wafer of the present invention, the oxide film at the tip end portion of the electrode terminal is removed, that is, After measuring the electrical characteristics of the electronic component of the wafer using the electrode terminal, it is also possible to apply a direct current to the electrode terminal. That is, the method for inspecting the electrical characteristics of the electronic components of the wafer of the present invention is performed at high speed and continuously using an automated inspection apparatus, and is used for measurement of electrical characteristics of a wafer electronic component, followed by application of direct current. The electrode terminals whose current is removed by the oxide film are used as they are for the measurement of the electrical characteristics of the next wafer electronic component housed in the same column of the through holes.

在圖10中,表示用以實施利用四端子法測量晶片電子零件之電特性,並且進行除去電極端子之前端之氧化物皮膜之方法的電路圖,按照本發明進行除去電極端子之前端之氧化物皮膜的方法亦可以利用在藉由二端子法測量晶片電子零件之電特性之電路中附加直流電流施加用之電路的電路來實施。圖11表示實施如此之方法所使用的電路之例。 In Fig. 10, there is shown a circuit diagram for carrying out a method of measuring an electrical characteristic of a wafer electronic component by a four-terminal method, and performing an oxide film on the front end of the electrode terminal, and removing an oxide film at a front end of the electrode terminal according to the present invention. The method can also be implemented by a circuit in which a circuit for applying a direct current is added to a circuit for measuring electrical characteristics of a chip electronic component by a two-terminal method. Figure 11 shows an example of a circuit used to implement such a method.

並且,在本說明書中,雖然晶片電子零件檢查分選裝置之構成的說明,還有本發明所提供之改良構成的晶片電子零件氧化物皮膜除去手段之說明,係以專利文獻1所記載之在垂直方向配置晶片電子零件搬運圓盤而動作的裝置為例而進行說明,但是在本發明之晶片電子零件之電特性之連續性檢查方法中所使用之晶片電子零件檢查分選裝置即使為在晶片電子零件搬運圓盤以傾斜之狀態被樞軸支撐於基台的裝置當然亦可。 Further, in the present specification, the description of the configuration of the wafer electronic component inspection sorting apparatus and the method for removing the oxide film of the wafer electronic component provided by the present invention are described in Patent Document 1. The apparatus for operating the wafer electronic component transporting disk in the vertical direction is described as an example. However, the wafer electronic component inspection sorting apparatus used in the method for checking the electrical characteristics of the electronic component of the wafer of the present invention is even in the wafer. It is a matter of course that the electronic component carrying disk is pivotally supported on the base in an inclined state.

Claims (3)

一種晶片電子零件之電特性的連續性檢查方法,其係使在表面同心圓狀地形成至少三列之透孔之列,且以能夠進行間歇性旋轉之方式在同心圓之中心被樞軸支撐於基台而構成的晶片電子零件搬運圓盤間歇性旋轉,且在該晶片電子零件搬運圓盤之旋轉停止之期間,在晶片電子零件供給收容部,將晶片電子零件收容在該晶片電子零件搬運圓盤之各列之透孔,接著藉由該晶片電子零件搬運圓盤之間歇性旋轉,使被收容在各列之透孔的晶片電子零件移動至電特性檢查部,且在該電特性檢查部,使電性連接於電特性測量裝置之電極端子接觸於被收容於在各列之半徑方向排列一列之透孔的各晶片電子零件,在其接觸狀態下,順序測量被收容於在該晶片電子零件搬運圓盤之半徑方向排列一列之透孔的晶片電子零件之電特性,之後,重覆實施在該晶片電子零件搬運圓盤之旋轉和停止狀態下將晶片電子零件收容至透孔還有電特性之測量,該晶片電子零件之電特性的連續性檢查方法之特徵在於:藉由在測量被收容於在該晶片電子零件圓盤之半徑方向排列一列之各透孔的晶片電子零件之內之一個的晶片電子零件之電特性之期間,對與其他之一個或者更多之晶片電子零件接觸之電極端子施加直流電流,除去生成在該電極端子之前端的氧化物皮膜。 A method for inspecting electrical characteristics of a chip electronic component by forming at least three rows of through holes concentrically on a surface and pivotally supported at a center of a concentric circle in an intermittent manner The wafer electronic component transporting disk formed on the base is intermittently rotated, and during the rotation of the electronic component transporting disk of the wafer, the electronic component is stored in the electronic component supply and the electronic component is stored in the electronic component of the wafer. The through holes of the rows of the discs are then moved by the intermittent rotation of the electronic component transporting discs of the wafers to move the electronic components of the wafers received in the through holes of the respective columns to the electrical property inspection portion, and the electrical characteristics are checked. The electrode terminals electrically connected to the electrical property measuring device are in contact with the respective chip electronic components housed in the through holes arranged in the radial direction of each column, and in the contact state, the sequential measurement is carried in the wafer. The electrical characteristics of the electronic components of the through-holes are arranged in the radial direction of the electronic component handling disk, and then the electronic component handling of the wafer is repeated. The electronic component is accommodated in the through hole and the electrical characteristic is measured in the rotating and stopping state of the disk, and the method for checking the electrical characteristics of the electronic component of the chip is characterized in that the electronic component is accommodated in the chip by measurement A DC current is applied to an electrode terminal that is in contact with one or more other electronic components of the wafer during a period in which the disk is radially aligned with the electrical characteristics of one of the electronic components of the wafer in each of the through holes. An oxide film is formed at the front end of the electrode terminal. 如請求項1所記載之晶片電子零件之電特性的連續性檢查方法,其中 晶片電子零件為在頂部和底部各具備電極面之柱狀的晶片電子零件,該電極端子係由分別與該晶片電子零件之頂部之電極面和底部之電極面接觸之至少一對探針所構成。 A method for inspecting continuity of electrical characteristics of a wafer electronic component as recited in claim 1, wherein The chip electronic component is a column-shaped chip electronic component having electrode faces at the top and the bottom, and the electrode terminal is composed of at least one pair of probes respectively contacting the electrode faces of the top and the bottom of the chip electronic component. . 如請求項2所記載之晶片電子零件之電特性的連續性檢查方法,其中該電極端子係由分別電性連接於電特性測量裝置之Hcur、Hpot、Lcur、Lpot之各端子的四根探針所構成。 The method for inspecting continuity of electrical characteristics of a chip electronic component according to claim 2, wherein the electrode terminal is four probes electrically connected to respective terminals of Hcur, Hpot, Lcur, and Lpot of the electrical property measuring device. Composition.
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