TWI644125B - 具有大穩定運動範圍之多狀態干涉調變器 - Google Patents
具有大穩定運動範圍之多狀態干涉調變器 Download PDFInfo
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- TWI644125B TWI644125B TW103146134A TW103146134A TWI644125B TW I644125 B TWI644125 B TW I644125B TW 103146134 A TW103146134 A TW 103146134A TW 103146134 A TW103146134 A TW 103146134A TW I644125 B TWI644125 B TW I644125B
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- Prior art keywords
- restoring force
- movable reflector
- movable
- deformable element
- optical stack
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Links
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0051—For defining the movement, i.e. structures that guide or limit the movement of an element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/007—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Astronomy & Astrophysics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461928953P | 2014-01-17 | 2014-01-17 | |
| US61/928,953 | 2014-01-17 | ||
| US14/265,193 | 2014-04-29 | ||
| US14/265,193 US9372338B2 (en) | 2014-01-17 | 2014-04-29 | Multi-state interferometric modulator with large stable range of motion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201533471A TW201533471A (zh) | 2015-09-01 |
| TWI644125B true TWI644125B (zh) | 2018-12-11 |
Family
ID=52282975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103146134A TWI644125B (zh) | 2014-01-17 | 2014-12-29 | 具有大穩定運動範圍之多狀態干涉調變器 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9372338B2 (enExample) |
| JP (1) | JP2017504835A (enExample) |
| KR (1) | KR20160110462A (enExample) |
| CN (1) | CN105899995B (enExample) |
| TW (1) | TWI644125B (enExample) |
| WO (1) | WO2015108649A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102193091B1 (ko) * | 2014-05-22 | 2020-12-21 | 엘지디스플레이 주식회사 | 낮은 반사율을 갖는 블랙 매트릭스를 구비한 평판 표시장치 및 그 제조 방법 |
| TWI581004B (zh) * | 2015-11-18 | 2017-05-01 | 財團法人工業技術研究院 | 可調式光學裝置 |
| CN108916688B (zh) * | 2017-04-24 | 2020-08-18 | 京东方科技集团股份有限公司 | 光源和照明装置 |
| TWI822686B (zh) | 2017-07-06 | 2023-11-21 | 日商濱松赫德尼古斯股份有限公司 | 光學裝置 |
| JP6514804B1 (ja) | 2017-07-06 | 2019-05-15 | 浜松ホトニクス株式会社 | 光学デバイス |
| WO2019009393A1 (ja) | 2017-07-06 | 2019-01-10 | 浜松ホトニクス株式会社 | 光学デバイス及びその製造方法 |
| US11187872B2 (en) | 2017-07-06 | 2021-11-30 | Hamamatsu Photonics K.K. | Optical device |
| EP3650911B1 (en) * | 2017-07-06 | 2023-08-30 | Hamamatsu Photonics K.K. | Optical device |
| JP7112876B2 (ja) | 2017-07-06 | 2022-08-04 | 浜松ホトニクス株式会社 | 光学デバイス |
| WO2019009392A1 (ja) | 2017-07-06 | 2019-01-10 | 浜松ホトニクス株式会社 | 光学デバイス |
| CN107561683B (zh) | 2017-09-15 | 2023-05-16 | 京东方科技集团股份有限公司 | 像素结构、显示基板及其控制方法、显示装置 |
| CN115657296A (zh) | 2017-11-15 | 2023-01-31 | 浜松光子学株式会社 | 光学器件的制造方法 |
| DE102018217054A1 (de) * | 2018-10-05 | 2020-04-09 | Robert Bosch Gmbh | Spiegeleinrichtung für eine Interferometereinrichtung, Interferometereinrichtung, Verfahren zur Herstellung einer Spiegeleinrichtung für eine Interferometereinrichtung, und Verfahren zur Herstellung einer Interferometereinrichtung |
| DE102019212597A1 (de) * | 2019-08-22 | 2021-02-25 | Robert Bosch Gmbh | Mikromechanische Interferometereinrichtung und Verfahren zum Herstellen einer mikromechanischen Interferometereinrichtung |
| IT201900024475A1 (it) * | 2019-12-18 | 2021-06-18 | St Microelectronics Srl | Dispositivo micromeccanico con gruppo elastico a costante elastica variabile |
| FI130707B1 (en) | 2020-03-31 | 2024-01-31 | Teknologian Tutkimuskeskus Vtt Oy | Fabry-Perot interferometer that has support elements |
| DE102022211284A1 (de) * | 2022-10-25 | 2024-04-25 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanische Struktur und mikromechanischer Lautsprecher |
| DE102023207523A1 (de) * | 2023-08-04 | 2025-02-06 | Robert Bosch Gesellschaft mit beschränkter Haftung | MEMS-Bauteil mit einer Membranfeder und Verfahren zur Herstellung einer Membranfeder |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060024880A1 (en) * | 2004-07-29 | 2006-02-02 | Clarence Chui | System and method for micro-electromechanical operation of an interferometric modulator |
| TW200626942A (en) * | 2004-09-27 | 2006-08-01 | Idc Llc | Analog interferometric modulator device |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5142414A (en) * | 1991-04-22 | 1992-08-25 | Koehler Dale R | Electrically actuatable temporal tristimulus-color device |
| US6680792B2 (en) * | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
| US6710908B2 (en) | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
| EP0783124B1 (en) | 1995-12-15 | 2002-04-17 | Texas Instruments Incorporated | Improvements in or relating to spatial light modulators |
| US7532377B2 (en) | 1998-04-08 | 2009-05-12 | Idc, Llc | Movable micro-electromechanical device |
| US6329738B1 (en) | 1999-03-30 | 2001-12-11 | Massachusetts Institute Of Technology | Precision electrostatic actuation and positioning |
| KR100738064B1 (ko) | 2001-02-27 | 2007-07-12 | 삼성전자주식회사 | 비선형적 복원력의 스프링을 가지는 mems 소자 |
| US6836029B2 (en) | 2001-11-28 | 2004-12-28 | International Business Machines Corporation | Micro-electromechanical switch having a conductive compressible electrode |
| US7265477B2 (en) | 2004-01-05 | 2007-09-04 | Chang-Feng Wan | Stepping actuator and method of manufacture therefore |
| US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
| US7612932B2 (en) | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
| US7486854B2 (en) | 2006-01-24 | 2009-02-03 | Uni-Pixel Displays, Inc. | Optical microstructures for light extraction and control |
| US7724417B2 (en) * | 2006-12-19 | 2010-05-25 | Qualcomm Mems Technologies, Inc. | MEMS switches with deforming membranes |
| US8274200B2 (en) | 2007-11-19 | 2012-09-25 | Xcom Wireless, Inc. | Microfabricated cantilever slider with asymmetric spring constant |
| US8314984B2 (en) | 2008-02-14 | 2012-11-20 | Miradia Inc. | Method and system for optical MEMS with flexible landing structures |
| US8164821B2 (en) | 2008-02-22 | 2012-04-24 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with thermal expansion balancing layer or stiffening layer |
| US7859740B2 (en) | 2008-07-11 | 2010-12-28 | Qualcomm Mems Technologies, Inc. | Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control |
| US8270062B2 (en) | 2009-09-17 | 2012-09-18 | Qualcomm Mems Technologies, Inc. | Display device with at least one movable stop element |
| JP5348032B2 (ja) * | 2010-03-16 | 2013-11-20 | セイコーエプソン株式会社 | 光フィルター並びにそれを用いた分析機器及び光機器 |
| JP5177209B2 (ja) * | 2010-11-24 | 2013-04-03 | 株式会社デンソー | ファブリペロー干渉計 |
| US20130335808A1 (en) | 2012-06-14 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | Analog imod having high fill factor |
| US9096419B2 (en) | 2012-10-01 | 2015-08-04 | Qualcomm Mems Technologies, Inc. | Electromechanical systems device with protrusions to provide additional stable states |
-
2014
- 2014-04-29 US US14/265,193 patent/US9372338B2/en active Active
- 2014-12-16 JP JP2016545903A patent/JP2017504835A/ja active Pending
- 2014-12-16 KR KR1020167022216A patent/KR20160110462A/ko not_active Withdrawn
- 2014-12-16 CN CN201480072861.9A patent/CN105899995B/zh active Active
- 2014-12-16 WO PCT/US2014/070630 patent/WO2015108649A1/en not_active Ceased
- 2014-12-29 TW TW103146134A patent/TWI644125B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060024880A1 (en) * | 2004-07-29 | 2006-02-02 | Clarence Chui | System and method for micro-electromechanical operation of an interferometric modulator |
| TW200626942A (en) * | 2004-09-27 | 2006-08-01 | Idc Llc | Analog interferometric modulator device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105899995A (zh) | 2016-08-24 |
| KR20160110462A (ko) | 2016-09-21 |
| US20150205092A1 (en) | 2015-07-23 |
| CN105899995B (zh) | 2017-10-31 |
| TW201533471A (zh) | 2015-09-01 |
| JP2017504835A (ja) | 2017-02-09 |
| WO2015108649A1 (en) | 2015-07-23 |
| US9372338B2 (en) | 2016-06-21 |
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