TWI638098B - 用於保護一目標泵浦內部之方法及裝置 - Google Patents

用於保護一目標泵浦內部之方法及裝置 Download PDF

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TWI638098B
TWI638098B TW103109618A TW103109618A TWI638098B TW I638098 B TWI638098 B TW I638098B TW 103109618 A TW103109618 A TW 103109618A TW 103109618 A TW103109618 A TW 103109618A TW I638098 B TWI638098 B TW I638098B
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target pump
target
pump
intake manifold
exhaust line
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TW201502377A (zh
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提摩 瑪琳恩
哈瑞 瓦哈瑪奇
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芬蘭商皮寇桑公司
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract

一種用於保護一目標泵浦內部之裝置及方法，於該處一目標泵浦入口設有一進氣歧管，及一目標泵浦出口設有一排氣歧管，及藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過排氣歧管排放，同時目標泵浦維持運轉，該目標泵浦內部係循序暴露於自飽和表面反應。

Description

用於保護一目標泵浦內部之方法及裝置 發明領域
本發明大致上係有關於原子層沈積(ALD)。更明確言之，本發明係有關於利用ALD提供保護塗層。
發明背景
原子層磊晶(ALE)方法係由Tuono Suntola博士於1970年代早期發明。該方法之另一俗名為原子層沈積(ALD)，今日使用ALD以替代ALE。ALD乃基於循序導入至少兩種反應性前驅物至至少一個基體的一種特殊化學沈積方法。
藉ALD之薄膜生長為緻密、不含針孔且具有均一厚度。舉例言之，於一實驗中，氧化鋁已經由熱ALD而從三甲基鋁(CH3)3Al，又名TMA長出，及又在基體晶圓上方只導致約1%之不均勻。
ALD技術之一項關注應用為於表面上提供保護塗層。
發明概要
依據本發明之第一面向實施例，提出一種用於保護一目標泵浦內部之方法，該方法包含：對一目標泵浦入口設置一進氣歧管且對一目標泵浦出口設置一排氣歧管；及當該目標泵浦維持運轉中，藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣歧管排放，將該目標泵浦內部暴露於循序自飽和表面反應。
循序自飽和表面反應(根據ALD)於泵浦內部產生期望的保護塗層。據此，目標泵浦內部可藉使用ALD保護使得在該目標泵浦內部可能接觸反應性氣體的全部表面被塗覆。於整個塗覆處理期間，目標泵浦可運轉。
於某些具體實施例中，該方法包含附接該進氣歧管至該目標泵浦入口及附接該排氣歧管至目標泵浦出口。
於某些具體實施例中，該等反應性氣體及無活性掃除氣體經由該進氣歧管而進入目標泵浦內部。於某些具體實施例中，該等反應性殘餘物及掃除氣體經由該排氣歧管而離開目標泵浦內部。
目標泵浦內部可用作為ALD反應之反應腔室。可單純地藉維持目標泵浦運轉獲得ALD反應之期望製程溫度。可能無需額外加熱。據此，於某些具體實施例中，該方法包含未使用其它加熱手段，藉維持該目標泵浦運轉提供一所要求的處理溫度。
於某些具體實施例中，該進氣歧管包含ALD反應 器進給設備。該進給設備包含進給管線，及至少該期望前驅物及無活性氣體流控制元件，諸如閥、質量流量控制器等，及其控制系統。
控制系統例如可藉軟體於膝上型電腦等執行。據此，於某些具體實施例中，該進氣歧管包含一或多個進給管線，其具有藉一電腦執行的控制系統控制的控制元件。合宜的可更換前驅物及無活性氣體源可附接至該進給管線。
於某些具體實施例中，排氣歧管包含一真空泵浦。於某些具體實施例中，該方法包含藉附接至該排氣歧管的一真空泵浦將反應殘餘物及掃除氣體從該目標泵浦內部泵送出。真空泵浦可提供下列效果中之一或多者：可經組配以透過該目標泵浦出口而將反應殘餘物從該目標泵浦內部泵送出。其可用以將該目標泵浦內部泵送成真空。
於某些具體實施例中，目標泵浦為真空泵浦。於某些具體實施例中，循序自飽和表面反應係於從周圍溫度延伸至150℃之一溫度範圍內進行，亦即ALD處理溫度係於此一範圍內。於某些具體實施例中，ALD處理溫度係於120-150℃之範圍。於某些具體實施例中，處理溫度係藉運轉目標泵浦本身達成。於某些其它具體實施例中，目標泵浦另外地或額外地係在ALD處理之前及/或之中藉一分開加熱器加熱。
於某些具體實施例中，如前文陳述，目標泵浦之類別為真空泵浦。於其它實施例中，目標泵浦屬於另一類。於又其它實施例中，泵浦一詞係廣義地解譯為也涵蓋壓縮 機，其內部係藉所揭示之方法塗覆。
於某些具體實施例中，該方法包含透過目標泵浦排成一列而形成一流道，及藉使用該流道提供該等目標泵浦之該等內部的同時保護。於某些具體實施例中，該方法包含藉將一前一泵浦的排氣歧管附接至在該列中之該隨後泵浦之一泵浦入口而形成該流道。
根據本發明之第二實施例面向，提出一種用於保護一目標泵浦內部之方法，該方法包含：被設計成附接至一目標泵浦入口之一進氣歧管；及被設計成附接至一目標泵浦出口之一排氣歧管，該裝置當使用時進行第一實施例面向或第三實施例面向之方法。
據此，於某些具體實施例中，該裝置當使用時係被組配成，(當該目標泵浦維持運轉或維持關閉中)藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣歧管排放，而將該目標泵浦內部暴露於循序自飽和表面反應。
於某些具體實施例中，進氣歧管包含前驅物蒸氣及掃除氣體之進給管線及其控制元件。
於某些具體實施例中，排氣歧管包含一真空泵浦。
於某些具體實施例中，該裝置為可移動。包含該進氣歧管及排氣歧管的保護裝置可為可移動，故可移動而滿足使用者的需要。於某些具體實施例中，進氣歧管及排 氣歧管為設計以在一目標泵浦內部保護方法中一起工作的分開裝置。於某些具體實施例中，進氣歧管包含附接至目標泵浦入口的一目標泵浦專一性附接部件。據此，於某些具體實施例中，進氣歧管包含一目標泵浦專一性附接部件經組配以附接進氣歧管至目標泵浦入口。於某些具體實施例中，排氣歧管包含一目標泵浦專一性附接部件以附接至目標泵浦出口。
根據本發明之第三實施例面向，提出一種用於保護一目標泵浦內部之方法，該方法包含：對一目標泵浦入口設置一進氣歧管且對一目標泵浦出口設置一排氣歧管；及當該目標泵浦不運轉中，藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣歧管排放，將該目標泵浦內部暴露於循序自飽和表面反應。
目標泵浦不運轉表示目標泵浦為「關閉」。於某些具體實施例中，循序自飽和表面反應係於周圍溫度執行。於某些其它具體實施例中，循序自飽和表面反應係於升溫執行(亦即高於周溫之溫度)。於某些具體實施例中，循序自飽和表面反應係於周溫至150℃之溫度範圍內執行。於某些具體實施例中，目標泵浦係藉一分開加熱器於ALD處理之前及/或之中加熱目標泵浦。關聯第一面向描述之實施例及其組合也適用於第三面向，及反之亦然。
前文已經例示本發明之不同非結合實施例面向及實施例。前述實施例僅用以解說所選面向或步驟其可用 於本發明之執行。若干實施例只呈現本發明之某個實施例面向。須瞭解相對應實施例可應用至其它實施例面向。可執行實施例之任何合宜組合。
10‧‧‧目標泵浦
11‧‧‧目標泵浦入口
12、13‧‧‧體積
14‧‧‧目標泵浦出口
15‧‧‧箭頭
16‧‧‧加熱器
20‧‧‧進氣歧管
21‧‧‧第一前驅物來源
22‧‧‧第二前驅物來源
23‧‧‧掃除/惰性氣體來源
24‧‧‧第一附接部件
30‧‧‧排氣歧管
31‧‧‧第二附接部件
32‧‧‧排氣管線
33‧‧‧真空泵浦
41‧‧‧第一前驅物進給管線
42‧‧‧第二前驅物進給管線
43‧‧‧掃除氣體進給管線
51、52、53‧‧‧質量流量控制器
61‧‧‧第一前驅物進給閥
62‧‧‧第二前驅物進給閥
63‧‧‧掃除氣體進給閥
70‧‧‧進給設備
71‧‧‧控制系統
72‧‧‧控制連結
73‧‧‧電氣連結
81-87‧‧‧步驟
現在將參考附圖舉例說明本發明，附圖中：圖1顯示依據一具體實施例一種裝置及其使用之示意圖，及圖2顯示依據一具體實施例之一種方法。
較佳實施例之詳細說明
於後文詳細說明部分中，原子層沈積(ALD)技術係用作為實施例。ALD生長機制之基礎為熟諳技藝人士所已知。如本專利申請案之引言部分所述，ALD乃基於循序導入至少兩個反應性前驅物至至少一個基體的特殊化學沈積方法。該至少一個基體係於反應室內暴露於時間上分開的前驅脈衝以藉循序自飽和表面反應而沈積材料至基體表面上。於本案之脈絡中，ALD一詞包含全部應用的以ALD為基礎之技術及任何相當的或密切相關的技術，諸如分子層沈積(MLD)技術。
基本ALD沈積循環包含四個接續步驟：脈衝A、掃除A、脈衝B、掃除B。脈衝A包含第一前驅蒸氣，及脈衝B包含另一前驅蒸氣。惰性氣體及一真空泵浦典型地用於掃除A及掃除B期間，從該反應空間掃除氣態反應副產物及殘餘反應物分子。沈積順序包含至少一個沈積循環。沈積循 環重複直到沈積順序已經製造具有期望厚度的薄膜或塗層。沈積循環也可更複雜。舉例言之，該等循環可包括由掃除步驟隔開的三個或以上反應物蒸氣脈衝。全部此等沈積循環形成一定時沈積順序，其係由一邏輯單元或微處理器控制。
於如後文描述之若干具體實施例中，提出一種以一保護塗層保護一泵浦(後文稱作為目標泵浦)內部之方法及裝置。該目標泵浦本身形成一反應室，並無分開的基體，但目標泵浦之內部表面形成一基體(基體一詞於此處表示於其上進行處理之材料)。全部此等表面可藉ALD處理塗覆，其中前驅蒸氣係透過一進氣歧管而循序地進入該目標泵浦內部。反應殘餘物係透過排氣歧管而從該目標泵浦內部排出。於沈積製程期間該目標泵浦維持運轉。於目標泵浦內部ALD反應之期望製程溫度可單純藉保持該目標泵浦的運轉獲得。於其它實施例中，該目標泵浦為「關閉」。於全部實施例中，於ALD處理之前及/或之中該目標泵浦可藉一加熱器選擇性地加熱。
圖1顯示於某些具體實施例中之方法及相關裝置。用以保護一目標泵浦10之內部的裝置包含一進氣歧管20及一排氣歧管30。該裝置可為可動裝置。若有所需，可動裝置可方便地移動至欲保護的泵浦附近。
進氣歧管20係經組配以附接至該目標泵浦入口11。圖1顯示該進氣歧管20藉一第一附接部件24而附接至該目標泵浦入口11。該第一附接部件24可為目標泵浦專一部 件。排氣歧管30係經組配以附接至該目標泵浦出口14。圖1顯示該排氣歧管30藉一第二附接部件31而附接至該目標泵浦出口14。該第二附接部件31可為目標泵浦專一部件。
該進氣歧管20包含ALD反應器進給設備70。該進給設備70包含所要求的進給管線及其控制元件。附接至圖1中第一附接部件24者為一第一前驅蒸氣進給管線41、一第二前驅物進給管線42及一掃除氣體進給管線43。該第一前驅物進給管線41係源自於一第一前驅物來源21，該第二前驅物進給管線42係源自於一第二前驅物來源22，及該掃除氣體進給管線43係源自於一掃除/惰性氣體來源23。
該等進給管線控制元件包含流量及時間控制元件。於該第一前驅物進給管線41中之一第一前驅物進給閥61及質量流量控制器51控制第一前驅物脈衝之時間及流量。相對應地，於該第二前驅物進給管線42中之一第二前驅物進給閥62及質量流量控制器52控制第二前驅物脈衝之時間及流量。最後，一掃除氣體進給閥63及質量流量控制器53控制掃除氣體之時間及流量。
於圖1顯示之實施例中，進給設備70之操作係藉控制系統控制。圖1顯示該進給設備70與一控制系統71間之一控制連結72。控制系統71例如可藉膝上型電腦或類似裝置中的軟體執行。
於某些具體實施例中，於該目標泵浦內部的ALD處理係於減壓下進行。排氣歧管30選擇性地包含一真空泵浦33。於某些具體實施例中，該真空泵浦33係位在附接入 該目標泵浦出口14內部的一排氣管線32末端。真空泵浦33可透過一選擇性電氣連結73(其係介於該控制系統71與該真空泵浦33間)藉控制系統71選擇性地控制。取決於目標泵浦之類別，該真空泵浦33將該目標泵浦10之整個內部或至少其中一部分泵送成為真空。目標泵浦10可包含不同的壓力區。於圖1中，體積12及13描繪此等區。箭頭15描繪在目標泵浦10內部之流動方向，換言之，從目標泵浦入口11經由目標泵浦內部(適用時，透過體積12及然後13)至目標泵浦出口14。若目標泵浦10也是真空泵浦，則圖1之體積12可視為一真空壓力區，及體積13可視為該目標泵浦10之一周圍壓力區。當該目標(真空)泵浦10運轉時，體積12維持真空。然後使用排氣管線真空泵浦33將體積13也泵送成真空。
進一步參考圖1，須注意於其它實施例中，進氣歧管及排氣歧管1可以不同方式配置。替代分開的進給管線，至少可共用部分進給管線。閥門類別可各異。流量控制元件位置可各異等。舉例言之，可使用三通閥替代雙通閥，即刻地反映進給管線路徑安排之變化。至於前驅物來源及掃除氣體，其選擇係取決於執行及期望的塗覆。目標泵浦可藉一選擇性加熱器16加熱。加熱器之操作可選擇性地由控制系統71透過一連結控制。
適用之泵浦材料例如為金屬，諸如鋼及鋁，但並不限於此等材料。適用的塗層例如為金屬氧化物，諸如氧化鋁、氧化鈦、氧化鉭、及碳化鎢、及其組合，但塗層並不限於此等材料。於某些具體實施例中，適用的ALD處理 溫度為周圍溫度至150℃，但其它範圍也適用。於某些具體實施例中，目標泵浦的類別為真空泵浦。於其它實施例中，目標泵浦為其它類別。於又其它實施例中，泵浦一詞係廣義解譯為也涵蓋壓縮機，但其內部係藉所揭示方法塗覆。
圖2顯示依據圖1已經揭示之方法步驟。首先，一可動泵浦保護裝置係攜帶於欲保護的該目標泵浦10旁，或該目標泵浦10係在可動或固定泵浦保護裝置旁移動。進氣歧管20係附接至目標泵浦入口11(步驟81)，及排氣歧管30係附接至目標泵浦出口14(步驟82)。目標泵浦10被選擇性地啟動(步驟83)。根據ALD，目標泵浦內部暴露於前驅蒸氣之循序導入，中間藉掃除步驟分開。反應殘餘物及掃除氣體被泵送入真空泵浦33(步驟84)。於該沈積方法中，獲得隨形保護塗層。泵浦被關閉(步驟85)，及進氣歧管20從目標泵浦入口11卸下(步驟86)，及排氣歧管30從目標泵浦出口14卸下(步驟87)。
於進一步具體實施例中，提供泵浦鏈用以保護形成該鏈的該等泵浦內部。於此等實施例中，進氣歧管係附接至第一目標泵浦入口，類似如先前實施例所示。第一排氣歧管之第一端係附接至第一目標泵浦出口，及該排氣歧管之相對端係附接至第二目標泵浦入口。第二排氣歧管之第一端係附接至第二目標泵浦出口，及該相對端係附接至第三目標泵浦入口等等。藉由此種配置，排列成一鏈的多個泵浦可藉一次ALD處理同時保護。氣體經由進氣歧管進入第一目標泵浦內部，及經由前一泵浦的排氣歧管進入額 外目標泵浦內部，直到終結於位在該鏈末端的一真空泵浦。據此，透過位在一列的目標泵浦形成一流道，及藉使用該流道提供目標泵浦內部的同時保護。目標泵浦本身可為真空泵浦或任何其它適用的泵浦。
不欲受本案申請專利範圍各項之範圍之所限，此處揭示之具體實施例中之一或多者的某些技術效果列舉如下：一項技術效果係藉隨形保護性塗層保護泵浦內部。另一項技術效果係保護現成(已組裝妥的)泵浦含其密封表面。若該保護欲在組裝之前針對各個泵浦部件分開地施行，如此將使得該等部件於組裝期間易受刮擦。另一項技術效果係藉於沈積處理期間維持目標泵浦之運轉而使用目標泵浦本身以提供目標泵浦內部的加熱。
須注意前文討論的部分功能或方法步驟可以不同順序及/或彼此同時進行。此外，前文討論之功能或方法步驟中之一或多者可為選擇性者或可經組合。
已經藉由特定執行之非限制性實施例及由發明人執行本發明目前預期的最佳模式之完整的資訊性描述提供前文說明。但熟諳技藝人士顯然易知本發明並不限於前文呈示之實施例之細節，反而未偏離本發明之特點，使用相當手段於其它實施例中執行。
此外，前文揭示本發明之實施例之若干特徵可優異地使用而未相對應地使用其它特徵。如此，前文詳細說明部分須視為僅作為本發明之原理的例示性但非限制性，因此，本發明之範圍係僅受隨附之申請專利範圍各項之範 圍所限。

Claims (16)

  1. 一種用於保護一目標泵浦內部之方法，該方法包含：對一目標泵浦入口設置一進氣歧管且對一目標泵浦出口設置一排氣管線，其係藉由附接該進氣歧管至該目標泵浦入口及附接該排氣管線至目標泵浦出口而設置；當該目標泵浦維持運轉中，藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣管線排放，將該目標泵浦內部暴露於循序自飽和表面反應；及自該目標泵浦入口卸下該進氣歧管及自該目標泵浦出口卸下該排氣管線。
  2. 如請求項1之方法，其中該方法係藉由一可動泵浦保護裝置來執行，該可動泵浦保護裝置包含該進氣歧管及該排氣管線。
  3. 如請求項1之方法，其包含藉附接至該排氣管線的一真空泵浦從該目標泵浦內部泵送反應殘餘物及掃除氣體。
  4. 如請求項1至3中任一項之方法，其包含未使用其它加熱手段，藉維持該目標泵浦運轉提供一所要求的處理溫度。
  5. 如請求項1至3中任一項之方法，其中該進氣歧管包含一或多個進給(in-feed)管線，其具有藉一電腦執行的控制系統控制的控制元件。
  6. 如請求項1至3中任一項之方法，其包含透過將該目標泵浦排成一列而形成一流道(flow)，及藉使用該流道提供該等目標泵浦之該等內部的同時保護。
  7. 如請求項6之方法，其包含藉將一前一泵浦的排氣管線附接至在該列中隨後的泵浦之一泵浦入口而形成該流道。
  8. 如請求項1至3中任一項之方法，其包含將該目標泵浦內部暴露於從周圍溫度延伸至150℃之一溫度範圍內的循序自飽和表面反應。
  9. 如請求項1至3中任一項之方法，其中該目標泵浦為一真空泵浦。
  10. 一種用於保護一目標泵浦內部之方法，該方法包含：對一目標泵浦入口設置一進氣歧管且對一目標泵浦出口設置一排氣管線，其係藉由附接該進氣歧管至該目標泵浦入口及附接該排氣管線至目標泵浦出口而設置；當該目標泵浦不運轉時，藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣管線排放，將該目標泵浦內部暴露於循序自飽和表面反應；及自該目標泵浦入口卸下該進氣歧管及自該目標泵浦出口卸下該排氣管線。
  11. 一種用於保護一目標泵浦內部之裝置，其包含：被設計成附接至一目標泵浦入口之一進氣歧管；及 被設計成附接至一目標泵浦出口之一排氣管線，當使用時，該裝置進行如請求項1至10中任一項定義之方法。
  12. 如請求項11之裝置，其中該裝置當使用時係被組配成，當該目標泵浦維持運轉中，藉反應性氣體透過該進氣歧管而循序地進入該目標泵浦內部及反應殘餘物透過該排氣管線排放，而將該目標泵浦內部暴露於循序自飽和表面反應。
  13. 如請求項11之裝置，其中該進氣歧管包含前驅物蒸氣及掃除氣體之進給管線及其控制元件。
  14. 如請求項11至13中任一項之裝置，其中該排氣管線包含一真空泵浦。
  15. 如請求項11至13中任一項之裝置，其中該進氣歧管包含一經組配以附接該進氣歧管至該目標泵浦內部之目標泵浦專一性附接部件。
  16. 如請求項11至13中任一項之裝置，其中該裝置為可動的。
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