TWI637233B - 自動對準雙重圖型化用之可變空間心軸切口及其製造方法 - Google Patents

自動對準雙重圖型化用之可變空間心軸切口及其製造方法 Download PDF

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TWI637233B
TWI637233B TW106114622A TW106114622A TWI637233B TW I637233 B TWI637233 B TW I637233B TW 106114622 A TW106114622 A TW 106114622A TW 106114622 A TW106114622 A TW 106114622A TW I637233 B TWI637233 B TW I637233B
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舒杰輝
金炳燁
金平 劉
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美商格羅方德半導體公司
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Abstract

本揭露係關於半導體結構，並且更尤指自對準雙圖型化用之可變空間心軸切口及製造方法。該方法包括：在基材上形成複數個心軸；在該複數個心軸及該基材之已曝露部分附近形成間隔物；移除該複數個心軸的其中至少一者之一部分以形成開口；以及以材料在該開口中進行填充。

Description

自動對準雙重圖型化用之可變空間心軸切口及其製造方法
本揭露係關於半導體結構，並且更尤指自對準雙圖型化用之可變空間心軸切口及製造方法。
隨著半導體程序持續向下比例縮放，例如：縮小，裝置之諸元件(即間距)之間的所欲間隔小於可使用傳統光學遮罩及光微影設備來製造之間距。一種用於在更小節點(例如：20nm或更小裝置)中達到更高解析度之方法是要使用多個圖型微影。舉例而言，側壁成像技巧已用於比例縮放裝置之空間及特徵。舉例而言，在側壁成形技巧中，先(例如：以最小可用間距)形成虛設線，然後在該等虛設線上形成側壁對準之間隔物。移除虛設線但留下間隔物，然後將該等間隔物當作圖型化遮罩用於將所欲圖型轉移至下面層件。按照這種方式，可達成大約一半最小間距之線間隔。
移除虛設線前，可先在間隔物上將附加材料(例如：反轉材料層)用於附加微影圖型化及切割。就具有小間距之後段(BEOL)程序而言，該附加圖型化/切割容許 變異更大，及/或容許半導體中形成之圖型更複雜。然而，用於附加圖型化/切割之傳統技巧依賴多個步驟，這會使製造成本增加。這些技巧中有許多還會使裝置的寄生效能增加。
在本揭露之一態樣中，一種方法包含：在基材上形成複數個心軸；在該複數個心軸及該基材之已曝露部分附近形成間隔物；移除該複數個心軸的其中至少一者之一部分以形成開口；以及以材料在該開口中進行填充。
在本揭露之一態樣中，一種方法包含：在基材上形成複數個心軸；在該複數個心軸上形成間隔物；回蝕該等間隔物以使該複數個心軸之頂端表面、及部分該基材曝露；在該基材之該已曝露表面上及該等間隔物上形成塗料；移除該複數個心軸的其中至少一者之一部分以沿著其長度形成切口；以及以材料填充該切口。
在本揭露之一態樣中，一種結構包含：複數個心軸；間隔物材料，位在附近有間隔物材料之該複數個心軸之側壁上；該複數個心軸之其中至少一者，沿著其長度具有切口；以及間隔物材料，沿著該長度填充該切口。
10‧‧‧結構
12‧‧‧基材
14‧‧‧BEOL基材
16、16a、105‧‧‧心軸
18、120‧‧‧間隔物材料、間隔物
20‧‧‧塗佈材料、塗料、材料
22‧‧‧光微影材料堆疊
24‧‧‧開口
26、32‧‧‧切口
28‧‧‧材料、附加材料
30‧‧‧空間
100‧‧‧圖型化光阻
110、125‧‧‧光微影遮罩
115‧‧‧空間
130‧‧‧切口間隔物
135‧‧‧阻隔光微影硬罩
140‧‧‧銅填料
145‧‧‧低k介電材料
本揭露是藉由本揭露例示性具體實施例的非限制性實施例，參照註記的複數個圖式，在以下詳細說明中作說明。
第1圖根據本揭露之態樣，除了其它特徵 外，還展示具有間隔物之心軸、及各別製作程序。
第2圖根據本揭露之態樣，除了其它特徵外，還展示塗敷於間隔物材料上方之塗料、及各別製作程序。
第3A圖根據本揭露之態樣，除了其它特徵外，還展示位在遮罩材料中之開口、及各別製作程序。
第3B圖展示第3A圖的俯視圖。
第4A圖根據本揭露之態樣，除了其它特徵外，還展示位在心軸中之切口、及各別製作程序。
第4B圖展示第4A圖的俯視圖。
第5圖根據本揭露之態樣，除了其它特徵外，還展示藉由移除心軸其中一部分所形成之溝槽(切口)中之材料、及各別製作程序。
第6圖根據本揭露之態樣，除了其它特徵外，還展示使該材料及間隔物材料曝露之開口、及各別製作程序。
第7A及7B圖根據本揭露之態樣，除了其它特徵外，還展示介於諸心軸之間的空間、及各別製作程序。
第8A至8J圖展示兩個切口可變尖部對尖部非心軸結構之一例示性、非限制性實施例、及本文中所述自對準雙圖型化用之可變空間心軸切口之後才進行之各別製作程序。
本揭露係關於半導體結構，並且更尤指自對準雙圖型化用之可變空間心軸切口及製造方法。更具體地說，本揭露提供一種在心軸處製造可變空間之方法，用以改良設計靈活性。有助益的是，藉由在心軸提供可變空間，現有可能進一步降低結構之寄生電容。
在具體實施例中，本文中所述之方法提供一種製作程序，用來在心軸處圖型化可變的尖部對尖部空間(tip to tip space)，並且以與間隔物相同之材料填充切口區(沿著心軸之長度)，以界定心軸切口。在具體實施例中，心軸舉例來說，可以是附有TiOx間隔物之非晶矽(a-Si)。藉由使用本文中所述材料與程序之組合，有可能將結構之寄生電容另外降低約3%。
本揭露之結構可使用若干不同工具以若干方式來製造。不過，一般來說，該等方法及工具係用於形成微米及奈米級尺寸的結構。用於製造本揭露之結構的方法(即技術)已採用積體電路(IC)技術。舉例而言，此等結構係建置於晶圓上，並且在晶圓頂端藉由光微影製程所圖型化之材料膜中實現。特別的是，製造該等結構使用了三個基本建構步驟：(i)在基材上沉積材料薄膜，(ii)藉由光微影成像術在膜上塗敷圖型化遮罩，以及(iii)選擇性地對遮罩進行膜之蝕刻。
第1圖根據本揭露之態樣展示一種結構及各別製作程序。在具體實施例中，結構10包括形成於基材12上之後段(BEOL)基材14。在具體實施例中，BEOL基材 14可以是諸如SiO2或TiN之硬罩，之後可在習知有記錄之可變尖部對尖部非心軸程序期間將其移除。基材12可以是附有配接線(例如：銅或其它金屬線)之介電材料，例如：低k介電材料。
仍請參閱第1圖，複數個心軸16是在BEOL基材14上形成。在具體實施例中，心軸16可以是Si或C為基礎之材料；但其它材料亦列入本文考量範圍內。可藉由習知的沉積程序，例如：化學氣相沉積(CVD)，然後藉由微影及蝕刻程序，來形成心軸16。舉例而言，在BEOL基材14上沉積該材料之後，使該材料上方形成之阻劑曝露於能量(光)以形成圖型(開口)。具有選擇性化學作用之蝕刻程序(例如：反應性離子蝕刻(RIE))將用於透過阻劑之開口在該材料中形成一或多個空間。介於相鄰心軸16之間的空間可約為心軸16之3倍厚度。阻劑可接著藉由習知的氧氣灰化程序或其它已知的剝除劑(stripant)來移除。
阻劑移除後，在心軸16、及BEOL基材14之已曝露部分上形成間隔物材料18。在具體實施例中，間隔物材料18(例如：TiOx)可藉由習知的沉積程序來沉積，例如：CVD或原子層沉積(ALD)程序。間隔物材料18可具有與心軸16之厚度大約或實質相等之厚度，因此，在尺寸與心軸16大約相同之間隔物材料之間留下空間。
在第2圖中，間隔物材料18經受非等向性蝕刻程序以移除水平表面上方之材料；亦即，非等向性蝕刻程序移除BEOL基材14、及心軸16之頂端表面上方之 材料。按照這種方式，將使BEOL基材14之表面、及心軸16之頂端表面曝露以供進一步處理步驟之用。於間隔物材料18、BEOL基材14之已曝露部分、及心軸16之頂端表面上方塗敷塗料20。塗料20可以是旋塗玻璃。舉例而言，塗料20可以是SiO2或SiOC，是使用原子層沉積(ALD)程序或其它旋塗玻璃沉積程序來沉積。
第3A圖展示結構在進一步處理後的截面圖；而第3B圖則展示第3A圖的俯視圖。更具體地說，在第3A及3B圖中，塗料20經受回蝕程序，例如：乾蝕刻程序。在具體實施例中，該回蝕將會導致塗料20在間隔物材料18上面被移除，使心軸16之頂端表面曝露。該蝕刻程序將會造成塗料20、心軸16之頂端表面、及間隔物材料18形成平坦表面。
仍請參閱第3A及3B圖，在塗料20、心軸16之頂端表面、及間隔物材料18的平坦表面上形成光微影材料堆疊22。在光微影材料堆疊22中形成與心軸16a對準之開口24。光微影材料堆疊22舉例來說，可以是SOH、SiON、ARC材料等，其是使用使用習知的微影程序(例如，曝露於能量)來形成開口。在具體實施例中，開口24可稍微重疊相鄰於間隔物材料18之塗佈材料20。舉例而言，在具體實施例中，開口24舉例來說，可大於間隔物材料18之2倍寬度。在具體實施例中，該開口可使間隔物材料18之一部分及心軸16a之一部分曝露，之後可將其移除以形成切口。
第4A圖展示結構在心軸拉式處理(mandrel pull processing)後的截面圖；而第4B圖則展示第4A圖的俯視圖。更具體地說，在第4A及4B圖中，心軸16a之已曝露部分係藉由選擇性蝕刻化學作用來移除。心軸16a之已曝露部分之移除將會沿著心軸16a之長度產生溝槽或切口26，使下面的BEOL基材14曝露。但是，應認識的是，心軸16a之其餘部分仍在光微影材料堆疊22底下維持受到保護。
在第5圖中，在藉由部分移除心軸16a所形成之開口24及切口26內沉積材料28。在具體實施例中，材料28與間隔物材料18是相同材料，例如：TiOx，其可以是可流動材料或可藉由習知的ALD程序來沉積。在替換具體實施例中，間隔物材料18及材料28可以是TiN或對心軸材料具有選擇性之其它金屬。
進一步如第6圖所示，可將材料28回蝕至間隔物材料18、塗料20及心軸16、16a之頂端表面。在具體實施例中，該回蝕可以是終止於塗料20上之定時蝕刻、或當塗料20開始回蝕時偵測化學作用差異之終點蝕刻。在任一情境中，塗料20或間隔物18之稍微回蝕將不會顯著影響最終產品裝置之效能。
第7A圖展示結構在移除旋塗玻璃材料後的截面圖；而第7B圖展示第7A圖的俯視圖。更具體地說，如第7A及7B圖所示，光微影材料堆疊22可藉由習知的剥除技巧來移除。進行此移除後，可藉由選擇性化學作用 來移除旋塗玻璃材料，例如：材料20。所產生的結構沿著其長度包括介於相鄰間隔物材料18之間的空間30、及介於心軸16a之相鄰部分之間的切口32，該切口32填充有材料28。在具體實施例中，切口32可以是間隔物材料18之2倍或更大厚度。在具體實施例中，附加材料28可將結構之寄生電容另外降低約3%。
第8A至8J圖展示兩個切口可變尖部對尖部非心軸結構之一例示性、非限制性實施例、及本文中所述自對準雙圖型化用之可變空間心軸切口之後才進行之各別製作程序。具體而言，第8A圖展示圖型化光阻100。第8B圖展示所形成之複數個心軸105、以及圖型化光阻100之移除。可藉由習知的沉積程序，然後藉由阻劑移除，來形成心軸105。在第8C圖中，於心軸105上方形成光微影遮罩110。在第8D圖中，心軸105係藉由習知的蝕刻程序來切割。介於該等心軸之間的空間(例如：切口)115小於2倍間隔物寬度。進一步如第8E圖所示，在諸心軸105之間及空間115內沉積間隔物材料120。在結構上方形成光微影遮罩125(第8F圖)，然後形成切口間隔物130(第8G及8H圖)。在第8I圖中，藉由習知的沉積程序形成阻隔光微影硬罩135，然後接著銅填料140及低k介電材料145(第8J圖)。
本方法如以上所述，係用於製造積體電路晶片。產生之積體電路晶片可由製造商以空白晶圓形式(也就是說，作為具有多個未封裝晶片的單一晶圓)、當作裸晶 粒、或以封裝形式來配送。在已封裝的例子中，晶片係嵌裝於單一晶片封裝(諸如塑膠載體，具有黏貼至主機板或其它更高階載體之引線)中，或多晶片封裝(諸如具有表面互連或埋置型互連任一者或兩者之陶瓷載體)中。在任一例子中，該晶片接著與其它晶片、離散電路元件、及/或其它信號處理裝置整合成下列任一者之一部分：(a)諸如主機板之中間產品，或(b)最終產品。最終產品可以是包括積體電路晶片之任何產品，範圍涵蓋玩具及其它低階應用至具有顯示器、鍵盤或其它輸入裝置、及中央處理器的進階電腦產品。
本揭露之各項具體實施例的描述已為了說明目的而介紹，但用意不在於窮舉或受限於所揭示的具體實施例。許多修改及變例對於所屬技術領域中具有通常知識者將會顯而易知，但不會脫離所述具體實施例的範疇及精神。本文中使用的術語是為了最佳闡釋具體實施例之原理、對市場出現之技術所作的實務應用或技術改良、或讓所屬技術領域中具有通常知識者能夠理解本文中所揭示之具體實施例而選擇。

Claims (20)

  1. 一種製造半導體結構之方法，該方法包含：在基材上形成複數個心軸；在該複數個心軸及該基材之已曝露部分附近形成間隔物；移除該複數個心軸的其中至少一者之一部分以形成開口；以及以材料填充該開口。
  2. 如申請專利範圍第1項所述之方法，其中，填充該開口之該材料、及該等間隔物為相同材料。
  3. 如申請專利範圍第2項所述之方法，其中，該相同材料是TiOx。
  4. 如申請專利範圍第1項所述之方法，其中：介於該等間隔物之間的間隔之尺寸等於該複數個心軸之厚度，為該等間隔物之厚度；以及該複數個心軸之厚度實質相同。
  5. 如申請專利範圍第1項所述之方法，更包含回蝕該等間隔物以使該複數個心軸之表面、及該基材在該複數個心軸上介於該等間隔物之間的表面曝露。
  6. 如申請專利範圍第5項所述之方法，更包含：於該等間隔物之間，在該複數個心軸之該已曝露表面、及該基材之該已曝露表面上形成塗料；以及回蝕該塗料以使該複數個心軸之頂端表面曝露。
  7. 如申請專利範圍第6項所述之方法，其中，該塗料是旋 塗玻璃材料。
  8. 如申請專利範圍第7項所述之方法，其中，該塗料是SiO2或SiOC。
  9. 如申請專利範圍第6項所述之方法，更包含：在該塗料上形成光微影材料堆疊；在該光微影材料堆疊中形成與該複數個心軸的其中至少一者之一部分對準之遮罩開口；以及移除該至少一個心軸之一部分以沿著其長度藉由透過該遮罩開口蝕刻該至少一個心軸之已曝露部分來形成切口。
  10. 如申請專利範圍第9項所述之方法，其中，該切口大於該等間隔物之2倍寬度。
  11. 如申請專利範圍第10項所述之方法，其中，填充該切口之材料是TiOx，並且該等間隔物是TiOx。
  12. 一種製造半導體結構之方法，該方法包含：在基材上形成複數個心軸；在該複數個心軸上形成間隔物；回蝕該等間隔物以使該複數個心軸之頂端表面、及部分該基材曝露；在該基材之該已曝露表面上及該等間隔物上形成塗料；移除該複數個心軸的其中至少一者之一部分以沿著其長度形成切口；以及以材料填充該切口。
  13. 如申請專利範圍第12項所述之方法，其中，該材料及該等間隔物皆為TiOx。
  14. 如申請專利範圍第12項所述之方法，其中，該塗料是旋塗玻璃材料。
  15. 如申請專利範圍第12項所述之方法，其中，是在該複數個心軸、該塗料及該等間隔物上塗敷光阻遮罩，然後在該光阻遮罩中形成遮罩開口，並且蝕刻該複數個心軸的其中該至少一者之該部分，從而形成該切口。
  16. 如申請專利範圍第15項所述之方法，更包含在填充該切口之後將該塗料移除。
  17. 如申請專利範圍第15項所述之方法，其中，該切口大於2倍間隔物厚度。
  18. 如申請專利範圍第17項所述之方法，其中，該複數個心軸材料是不同於該塗料及該等間隔物的材料。
  19. 如申請專利範圍第18項所述之方法，其中，當於該複數個心軸的其中該至少一者之該部分中形成該切口時，藉由該光阻遮罩來保護該複數個心軸之其餘者。
  20. 一種半導體結構，包含：複數個心軸；間隔物材料，位在附近有間隔物材料之該複數個心軸之側壁上；該複數個心軸之其中至少一者，沿著其長度具有切口；以及材料，沿著該長度填充該切口。
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