TWI635561B - Semiconductor manufacturing equipment - Google Patents

Abstract

An embodiment of the present invention is to reduce the fluctuation of the substrate.

A semiconductor manufacturing apparatus according to an embodiment includes a guide rail capable of supporting a substrate and extending in a first direction; a heating plate disposed below the guide rail; a first jig disposed above the guide rail; and a first protrusion And the second protruding portion, which can sandwich the substrate between the heating plate and the first protruding portion, and are arranged side by side in a second direction crossing the first direction; compared with the second protruding portion The first protruding portion can clamp the position of the substrate closer to the central portion, and the distance between the front end of the first protruding portion and the heating plate side surface of the first jig is longer than the front end of the second protruding portion and the first The distance of the above-mentioned side surface of the heating plate of the jig is longer.

Description

Semiconductor manufacturing equipment [Related applications]

This application has priority over Japanese Patent Application No. 2015-222346 (application date: November 12, 2015) as the base application. This application contains the entire contents of the basic application by referring to the basic application.

This embodiment relates to a semiconductor manufacturing apparatus.

In a semiconductor manufacturing apparatus, it may be pressed against a substrate.

An embodiment of the present invention provides a semiconductor manufacturing apparatus capable of reducing fluctuations in a substrate.

The semiconductor manufacturing apparatus according to the embodiment includes: a guide rail capable of supporting a substrate and extending in a first direction; a heating plate disposed below the guide rail; a first jig disposed above the guide rail; and a first protruding portion and The second protruding portion is capable of sandwiching the substrate between the heating plate and the second protruding portion. The second protruding portion is disposed in the first jig and is arranged side by side in a second direction crossing the first direction. Compared with the second protruding portion, The first protruding portion can clamp the position of the substrate closer to the central portion, and the distance between the front end of the first protruding portion and the heating plate side surface of the first jig is longer than the front end of the second protruding portion and the first jig. The distance between the side surfaces of the heating plate is longer.

5‧‧‧Semiconductor manufacturing equipment

10‧‧‧ Supply Department

20‧‧‧Transportation Department

25‧‧‧rail

25a‧‧‧ Upper rail section

25b‧‧‧ Lower rail section

30‧‧‧Exhaust

40‧‧‧ substrate

45‧‧‧First chip area

50‧‧‧ semiconductor wafer

55‧‧‧ bonding wire

70‧‧‧pre-heating plate

80‧‧‧ heating plate

85‧‧‧ first zone

85a‧‧‧first zone

85b‧‧‧first zone

85c‧‧‧First Zone

85d‧‧‧First Zone

85e‧‧‧first zone

85a '~ 85e'‧‧‧ first zone

100‧‧‧ Fixture

100'‧‧‧ Fixture

100 "‧‧‧Fixture

100 '' '‧‧‧Fixture

100a, 100b‧‧‧Jig

105‧‧‧hole

105a‧‧‧hole

105a'‧‧‧hole

105b‧‧‧hole

105b'‧‧‧hole

105c‧‧‧hole

105c'‧‧‧hole

105d‧‧‧hole

105d'‧‧‧hole

105e‧‧‧hole

105e'‧‧‧hole

200‧‧‧Body

200'‧‧‧Body

200 "‧‧‧Body

200 '' '‧‧‧Body

200a ~ 200f‧‧‧Body

200a '~ 200f'‧‧‧Body

205‧‧‧ opening

205'‧‧‧ opening

210‧‧‧Spring section

220‧‧‧pin

230‧‧‧ protrusion

230'‧‧‧ protrusion

230 "‧‧‧ protrusion

230 '' '‧‧‧ protrusion

230a‧‧‧ protrusion

230b‧‧‧ protrusion

230c‧‧‧ protrusion

230d‧‧‧ protrusion

230e‧‧‧ protrusion

230a '~ 230e'‧‧‧ protrusion

235‧‧‧Elastic material

235a ~ 235e‧‧‧Elastic material

300‧‧‧Vacuum pump

310‧‧‧Piping

310'‧‧‧Piping

310a‧‧‧Piping

310a'‧‧‧Piping

310b‧‧‧Piping

310b'‧‧‧Piping

310c‧‧‧Piping

310c'‧‧‧Piping

320‧‧‧ Valve

320a‧‧‧valve

320b‧‧‧valve

340‧‧‧ Cavity

340a‧‧‧cavity

340b‧‧‧cavity

350‧‧‧ Valve

350a‧‧‧ valve

350b‧‧‧ valve

360‧‧‧Control Department

a‧‧‧ pressure

t1‧‧‧time

t2‧‧‧time

t3‧‧‧time

X‧‧‧ direction

Y‧‧‧ direction

FIG. 1 is a schematic plan view illustrating a semiconductor manufacturing apparatus according to a first embodiment. Illustration.

FIG. 2 is a schematic perspective view illustrating the semiconductor manufacturing apparatus according to the first embodiment.

FIG. 3 (A) is a sectional view schematically showing an entire image of the jig of the first embodiment.

FIG. 3 (B) is a cross-sectional view schematically showing an enlarged image of a protruding portion of the jig of the first embodiment.

4 is a cross-sectional view schematically showing an entire image of a jig of a comparative example of the first embodiment.

5 (A) to 5 (C) are schematic cross-sectional views illustrating a procedure for pressing a jig against a substrate in a comparative example of the first embodiment.

6 (A) to 6 (C) are schematic cross-sectional views illustrating the steps of pressing the jig against the substrate according to the first embodiment.

7 (A) and 7 (B) are schematic cross-sectional views illustrating a modification example of the jig of the first embodiment.

FIG. 8 is a schematic cross-sectional view illustrating a modification example of the jig of the first embodiment.

FIG. 9 is a schematic perspective view illustrating a modification example of the jig of the first embodiment.

FIG. 10 is a schematic plan view illustrating a semiconductor manufacturing apparatus according to a second embodiment.

FIG. 11 is a schematic cross-sectional view illustrating a connection relationship between a hole disposed on a surface of a heating plate and a vacuum pump in a semiconductor manufacturing apparatus according to a second embodiment.

FIG. 12 is a schematic graph showing the relationship between time and pressure of each pipe in the second embodiment.

FIG. 13 illustrates a modification example of the semiconductor manufacturing apparatus according to the second embodiment. Schematic top view.

FIG. 14 is a schematic cross-sectional view illustrating a connection relationship between a hole disposed on a surface of a heating plate and a vacuum pump in a semiconductor manufacturing apparatus according to a modification of the second embodiment.

FIG. 15 is a schematic cross-sectional view illustrating a connection relationship between a hole disposed on a surface of a heating plate and a vacuum pump in a semiconductor manufacturing apparatus according to a modification of the second embodiment.

FIG. 16 is a schematic cross-sectional view illustrating a connection relationship between a hole disposed on a surface of a heating plate and a vacuum pump in a semiconductor manufacturing apparatus according to a third embodiment.

FIG. 17 is a schematic graph showing the relationship between time and the pressure of each pipe in the third embodiment.

FIG. 18 is a schematic perspective view illustrating a semiconductor manufacturing apparatus according to a fourth embodiment.

FIG. 19 is a cross-sectional view schematically showing an entire image of a jig according to a fifth embodiment.

Hereinafter, embodiments will be described with reference to the drawings. In the following description, the same reference numerals are assigned to substantially the same functions and components. Furthermore, in this specification, the contact of two or more objects such as "pressed", "pressed", "pressed", "connected", "pressed", "pressed", or two or more The expression of mutual force between objects includes situations where force is not directly applied but indirectly applied. That is, expressions such as "the protrusion is in contact with the substrate" and "the protrusion is pressed against the substrate" also include the following situations: there are other objects between the protrusion and the substrate, and the protrusion or the substrate is in contact with the object to face Force is applied by the other of the protrusion or the substrate.

(First Embodiment)

FIG. 1 is a schematic plan view illustrating a semiconductor manufacturing apparatus 5 according to this embodiment.

The semiconductor manufacturing apparatus 5 includes a supply unit 10, a transfer unit 20, and a discharge unit 30.

The supply unit 10 supplies the substrate 40 to the transfer unit 20. For example, the supply unit 10 supports plural The substrates 40 are sequentially supplied to the transfer unit 20. Alternatively, the supply unit 10 may be a guide rail in other steps. That is, the substrate 40 may be directly supplied to the transfer unit 20 from the guide rails in other steps.

The transfer unit 20 transfers the supplied substrate 40 to the discharge unit 30 and performs a specific process in the process. Specific processing includes, for example, mounting the semiconductor wafer 50 on the substrate 40 or wire bonding between the semiconductor wafer 50 and the substrate 40.

The substrate 40 transferred from the transfer unit 20 is discharged to the discharge unit 30. The discharge unit 30 can support a plurality of substrates 40, for example. Alternatively, the discharge portion 30 may be a guide rail in other steps. That is, the substrate 40 may be discharged to the guide rails of other steps. The substrate 40 discharged from the discharge unit 30 is carried to another semiconductor manufacturing apparatus or another semiconductor manufacturing step.

(About the transportation department 20)

Hereinafter, the details of the conveyance unit 20 will be described in more detail using FIGS. 1 and 2.

FIG. 2 is a perspective view schematically showing the transfer unit 20. In FIG. 2, a part of a portion where the preheating plate 70 and the heating plate 80 overlap with other elements is indicated by a dotted line. It should be noted that all parts of the pre-heating plate 70 and the heating plate 80 are not necessarily described for the convenience of observation.

The transport unit 20 includes, for example, a guide rail 25. The rail 25 includes, for example, an upper rail portion 25a and a lower rail portion 25b. The substrate 40 is supported between the upper rail portion 25a and the lower rail portion 25b. The extending direction of the guide rail 25 is the X direction. A direction crossing the X direction, for example, a straight direction is set to the Y direction. Furthermore, the upper rail portion 25a and the lower rail portion 25b may be integrally disposed, or may be one of them.

The substrate 40 is a circuit substrate or an interposer of a semiconductor device. The substrate 40 may be provided with components (not shown). The substrate 40 is transported in the extending direction of the guide rail 25 by, for example, hanging a jig (not shown) on a hole (not shown) arranged in the substrate 40 and pulled by the jig.

As shown in FIG. 1, the substrate 40 includes, for example, four first wafer regions 45 in the Y direction. The first wafer region 45 corresponds to a region of a semiconductor device when the substrate 40 is separated in a subsequent step. As shown in FIG. 1, the substrate 40 also has a plurality of firsts in the X direction, for example. Wafer area 45. In addition, the number of the first wafer regions 45 included in one substrate 40 is arbitrary, and is not limited to the example shown in FIG. 1.

A pre-heating plate 70 and a heating plate 80 are arranged below the substrate 40. The pre-heating plate 70 and the heating plate 80 can heat the substrate 40 above it. In FIGS. 1 and 2, the pre-heating plate 70 and the heating plate 80 are spaced apart as different configurations. In addition, the pre-heating plate 70 and the heating plate 80 may be integrally arranged as one structure.

The substrate 40 is pre-heated by a pre-heating plate 70. By the preheating, when the substrate 40 is heated by the heating plate 80, the substrate 40 can be prevented from being shifted. That is, as described below, the substrate 40 is heated on the heating plate 80 and pressed by the clamp 100. The substrate 40 may be displaced due to thermal expansion. Therefore, by heating the substrate 40 on the preheating plate 70 in advance, the thermal expansion of the substrate 40 caused by the heating of the heating plate 80 can be reduced. In this way, it is possible to reduce the displacement of the substrate 40 caused by the thermal expansion on the heating plate 80.

Above the heating plate 80, the substrate 40 is pressed against the heating plate 80 by the clamps 100a and 100b. In other words, the substrate 40 is sandwiched between the clamps 100 a and 100 b and the heating plate 80. The jig 100a is arranged on the supply unit 10 side, and the jig 100b is arranged on the discharge unit 30 side. The clamps 100a and 100b extend in the Y direction. In the following description, when it is not necessary to distinguish between the jig 100a and the jig 100b, it is simply referred to as the jig 100.

The heating plate 80 has holes (not shown) on its upper surface. This hole is connected to a vacuum pump (not shown). The substrate 40 is attracted to the upper surface of the heating plate 80 by suction by a vacuum pump.

The substrate 40 is heated by the heating plate 80 in a region pressed between the clamps 100a and 100b. The first wafer region 45 pressed against the heating plate 80 is subjected to a wire bonding process. Since the substrate 40 is pressed onto the heating plate 80, wire bonding can be performed stably. In addition, the substrate 40 can be wire-bonded by the heat supplied from the heating plate 80. As shown in FIG. 1, a bonding wire 55 is formed between the semiconductor wafer 50 and the substrate 40.

The operation of pressing the substrate 40 with respect to the jig 100 will be described in detail. The structure of the jig 100 will be described in detail after FIG. 3.

The jig 100 is disposed above the substrate 40 away from the substrate 40 in advance. When the substrate 40 is transported to a specific position, the jig 100 and the heating plate 80 approach. When the fixture 100 and the heating plate 80 approach, the substrate 40 is sandwiched between the fixture 100 and the heating plate 80. In addition, it can be brought close by lowering the jig 100, it can also be brought close by raising the heating plate 80 toward the jig 100, or both can be moved.

Further, in FIGS. 1 and 2, the jig 100 presses the substrate 40 on the heating plate 80. The jig 100 presses a part of the substrate 40 in the Y direction. That is, the length in the Y direction of the substrate 40 is longer than the length in the Y direction of the jig 100. The size and arrangement of the jig 100 are not limited to this. For example, the length in the Y direction of the jig 100 may be longer than the length in the Y direction of the substrate 40. In addition, the jig 100 may be disposed in a region on the outer side that does not overlap the heating plate 80 when viewed from above. That is, the jig 100 may be capable of pressing against the substrate 40 together with the heating plate 80. The jig 100 may have any size and shape except for the following conditions.

FIG. 3 is a schematic cross-sectional view illustrating details of the jig 100 according to this embodiment. FIG. 3 (A) is a schematic cross-sectional view showing an overall view of the jig 100, and FIG. 3 (B) is a schematic cross-sectional view of an arbitrary protrusion 230 of the jig 100 in an enlarged manner.

The jig 100 includes main body portions 200a to 200f and protruding portions 230a to 230e. In the following description, when there is no need to distinguish them, they are simply referred to as a main body portion 200 and a protruding portion 230. The jig 100 includes a spring portion 210 and a pin 220 around the protruding portion 230.

The main body portions 200 a to 200 f are connected to the front or rear of FIG. 3 (A) (not shown), and constitute an integrated main body portion 200. The protruding portions 230a to 230e are arranged between the main body portions 200a to 200f. If viewed in another way, the protrusions 230 a to 230 e are arranged in the opening 205 of the main body 200.

A protruding portion disposed near the center of the substrate 40 in the Y-axis direction is a protruding portion 230c. The protrusions 230 b and 230 d are protrusions that are pressed further outside the substrate 40 than the protrusions 230 c. The protrusions 230a and 230e are protrusions that can be pressed against the outer portions. In addition, although five protrusions are shown in FIG. 3 as an example, it is not limited to this. The jig 100 may have any number of protrusions 230.

The protruding portion 230 is formed such that an upper portion thereof is larger than the opening portion 205 and is arranged to be hung on the main body portion 200. The protruding portion 230 is provided so that the surrounding protruding portion is shorter than the protruding portion in the center. Specifically, the protrusions 230b and 230d on the outer side are shorter than the protrusions 230a on the center. Furthermore, the protrusions 230a and 230e on the outer side are shorter than the protrusions 230b and 230d.

In other words, the distance between the central protrusion 230a and the substrate 40 is shorter than the distance between the outer protrusions 230b and 230d and the substrate 40. Furthermore, the distance between the protrusions 230b and 230d and the substrate 40 is shorter than the distance between the protrusions 230a and 230e on the outside and the substrate 40.

Furthermore, in other words, the distance between the central protruding portion 230a and the heating plate 80 is shorter than the distance between the outer protruding portions 230b and 230d and the heating plate 80. Furthermore, the distance between the projections 230b and 230d and the heating plate 80 is shorter than the distance between the projections 230a and 230e on the outer side and the heating plate 80.

Each projection 230 is provided with a spring portion 210 and a pin 220 around the projection 230. For example, when the protrusion 230 is pressed against the substrate 40, the protrusion 230 is urged in a direction opposite to the substrate 40, that is, an upward direction, as a reaction. When the protruding portion 230 is urged upward, the protruding portion 230 is pushed up with respect to the main body portion 200. When the protruding portion 230 is pushed up, the spring portion 210 is sandwiched between the pin 220 and the body portion 200, and the spring portion 210 is shortened. When the spring portion 210 is shortened, the spring portion 210 reversely pushes the main body portion 200 and the pin 220 corresponding to the shortened length thereof. That is, the protruding portion 230 is pressed against the substrate 40 by the rebound force of the spring portion 210.

A process in which the jig 100 approaches the substrate 40 and the jig 100 presses the substrate 40 against the heating plate 80 will be described.

First, the longest central projection 230c presses the substrate 40 against the heating plate 80. Next, the protrusions 230b and 230d on the outer side are pressed against the substrate 40. Then, the protrusions 230 a and 230 e on the outer side are pressed against the substrate 40. That is, the protruding portion 230 in the center of the jig 100 is pressed against the substrate 40, and the protruding portions 230 on the outer side are sequentially pressed against the substrate 40.

(Effect of the first embodiment)

By using the jig 100 of this embodiment, it is possible to stably press the substrate 40 with less deviation from the heating plate 80.

Fig. 4 shows a jig 100 'of a comparative example. This comparative example differs from this embodiment in that the length of the protruding portion 230 ′ is not substantially fixed depending on the location.

5 (A) to 5 (C) are diagrams schematically illustrating a case where the substrate 40 is pressed by the jig 100 'of the comparative example. FIG. 5A is a diagram schematically showing a state before the substrate 40 is transported and the jig 100 and the heating plate 80 are approached. FIG. 5 (B) is a diagram schematically showing a state in which the clamp 100 and the heating plate 80 are approaching and the clamp 100 is in contact with the substrate 40. FIG. 5 (C) is a diagram schematically showing a state where the jig 100 approaches the heating plate 80 and the substrate 40 is sandwiched between the jig 100 and the heating plate 80.

As shown in FIG. 5 (A), the substrate 40 is not necessarily flat with respect to the upper surface of the heating plate 80. For example, in addition to the warpage of the substrate 40 itself, the substrate 40 may also have warpage or undulation due to an unillustrated part provided on the substrate 40 or the attachment of the semiconductor wafer 50. In particular, when the substrate 40 is formed into a thin film, warpage or undulations tend to increase.

As shown in FIG. 5 (B) to FIG. 5 (C), when the substrate 40 is pressed against the substrate 40 by the jig 100 'having the protrusions 230' having approximately equal lengths, the substrate 40 is sandwiched by each of the protrusions 230 'and the heating plate 80. The timing of pinching is almost constant at each protrusion. As shown in FIG. 5 (B), the warpage or undulation of the substrate 40 generated in the center of the substrate 40 cannot be sufficiently retreated to the outside of the jig 100 '. That is, as shown in FIG. 5 (C), when the substrate 40 is sandwiched between the holder 100 and the heating plate 80, warpage, undulations, bulges, wrinkles, and the like remain in the central portion of the substrate 40. In addition, in FIG. 5 (C), actually, the protrusion part 230 'has a part which protrudes upwards from the main-body part 200', but the description is abbreviate | omitted in a drawing. The central portion refers to a portion including the center of the substrate 40 when viewed from the X direction. The area on both sides of the central portion when the substrate 40 is viewed from the X direction is referred to as the outside of the substrate 40. Alternatively, the central portion may be used in the sense of indicating the center of the substrate 40 when the substrate 40 is viewed from the X direction.

If warpage or undulation occurs in the center of the substrate 40, there will be a substrate on the heating plate Uplift situation. In addition, the bonding load may be unstable and the bonding load may not be accurately applied to the substrate 40. That is, if warpage or undulation occurs in the central portion of the substrate 40, there may be a cause of non-bonding. In addition, it is difficult to perform accurate bonding at the time of wire bonding, which causes a short circuit failure with an undesired place and the like.

6 (A) to 6 (C) are schematic diagrams illustrating a case where the jig 100 according to this embodiment is used. 6 (A) to 6 (C) correspond to the diagrams of FIGS. 5 (A) to 5 (C).

As shown in FIG. 6 (B), by using the jig 100 according to this embodiment, the substrate 40 is sequentially sandwiched between each protruding portion 230 and the heating plate 80 from the center to the outside. By being sandwiched in order on the outside, warpage or undulations generated on the substrate 40 are sequentially squeezed out from the center to the outside. In this way, as shown in FIG. 6 (C), in a state where the jig 100 and the heating plate 80 are sandwiched, warpage and the like occurring in the substrate 40 are reduced. By reducing warpage or the like, non-bonding defects or short-circuit defects in wire bonding are reduced.

Furthermore, according to this embodiment, the substrate 40 is pressed against the heating plate 80 by both the clamps 100 a and 100 b arranged to sandwich the heating plate 80. That is, the substrate 40 is sandwiched between the two sides of the heating plate 80 in the Y direction. By sandwiching the substrate 40 at two positions in the Y direction as described above, the substrate 40 can be more stably clamped.

Furthermore, in the above description, as shown in FIG. 3, the length of the protrusion 230c in the central portion has been described as the longest, but this embodiment is not limited to this. That is, the front end of the protrusion (for example, the protrusion 230c) near the central portion may be disposed closer to the surfaces of the substrate 40 and the heating plate 80 than the protrusions (for example, 230a and 230e) on the outside.

This will be described more specifically. For example, the length of the protruding portion 230 above the body portion 200 is arbitrary. That is, the length of the protrusions 230c disposed on the central portion above the body portion 200 may be shorter than the length of the protrusions 230c disposed on the outside (eg, 230a or 230e) above the body portion 200. That is, the total length of the protrusions 230c arranged near the center may be shorter than the total length of the protrusions 230a or 230e arranged outside.

(Modification of the first embodiment)

7 (A) and 7 (B) are schematic diagrams of a jig 100 showing a modified example of the first embodiment. As shown in FIG. 7 (A), only the central protruding portion 230 "can be made longer and the other protruding portions 230" can be made shorter. Alternatively, as shown in FIG. 7 (B), the central three protrusions 230 '' 'can be made longer, and only the outermost protrusions 230' '' can be made shorter.

In other words, as shown in FIG. 7 (A), the distance between the central protrusion 230 "and the heating plate 80 may be shorter than the distance between the other protrusion 230" and the heating plate 80. Alternatively, as shown in FIG. 7 (B), the distance between the central three protrusions 230 '' 'and the heating plate 80 can be made shorter, and only the distance between the outer protrusion 230' '' and the heating plate 80 can be made longer. .

In the case of the modified example, since the protruding portion 230 in the central portion is made longer and the protruding portion 230 in the outer peripheral portion is made shorter, the same effects as those of the first embodiment described above are also exhibited. Moreover, in this modification, since the length of the protrusion part 230 is two types, the number of parts can be reduced. That is, there is an advantage that maintenance and the like at the time of replacement of parts of the protruding portion 230 are easy.

Furthermore, the protruding portion 230 of the jig 100 may not include the spring portion 210. For example, the protruding portion 230 may be an elastic material such as rubber. As shown in FIG. 8, only the front end of the clamp 100 may be made of the elastic material 235. That is, each of the protruding portions 230a to 230e has an elastic material 235a to 235e at its front end portion, respectively. That is, the above-mentioned effect can be obtained as long as the jig 100 has a structure that sequentially holds the substrate 40 from the center.

By using the elastic material 235 for the front end portion of the clamp 100 as in the modified example, it is possible to reduce the movement of metal friction between the front end portion of the clamp 100 and the substrate 40. That is, it is possible to reduce generation of metal contamination or dust due to metal friction with each other. Furthermore, since abrasion can be reduced, maintenance of the jig 100 is easy. In addition, the structure in which the elastic material 235 is arranged at the front end of the jig 100 can be manufactured only by mounting the resin at the front end of the same jig as in the comparative example, so that the jig 100 can be easily manufactured. That is, there is an advantage that the jig 100 can be prepared economically.

Furthermore, the jig 100 may have any number of protrusions 230, and the interval between the protrusions 230 is arbitrary.

Furthermore, as shown in FIG. 9, the jig 100 may be provided integrally with 100 a and 100 b. That is, it is not necessary to divide into two.

Although the description has been made by performing wire bonding on the heating plate 80, the present embodiment is not limited to this. For example, the semiconductor wafer 50 may be wafer-bonded on the heating plate 80 and on the substrate 40. That is, if warpage or undulation occurs in the central portion of the substrate 40 during wafer bonding, the substrate may swell on the heating plate. In addition, the bonding load may be unstable and the bonding load may not be accurately applied to the substrate 40. That is, if warpage or undulation occurs in the central portion of the substrate 40, there may be a cause of poor bonding. By using the jig 100 of this embodiment, it is possible to similarly reduce defects in wafer bonding.

(Second Embodiment)

This embodiment will be described with reference to FIGS. 10 to 12.

This embodiment is different from the first embodiment in that holes 105 are arranged on the upper surface of the heating plate 80, and the suction force of the substrate 40 passing through the holes 105 is at the position of each hole. There are differences.

FIG. 10 is a schematic plan view when viewed from above the heating plate 80 of the second embodiment. Furthermore, the heating plate 80 below the substrate 40 and the holes 105 disposed on the upper surface of the heating plate 80 are illustrated by wavy lines.

As shown in FIG. 10, the upper surface of the heating plate 80 is divided into first regions 85a to 85e. The first region 85c is the most central region in the Y direction, the first regions 85b and 85d are regions on both sides, and the first regions 85a and 85e are regions further outside.

Holes 105a to 105e are arranged in the first regions 85a to 85e, respectively. As described below, the holes 105a to 105e are connected to a vacuum pump (not shown) via a pipe. In addition, by being sucked by the vacuum pump, the holes 105a to 105e and the pipes connected thereto are depressurized and become negative pressure. That is, the heating plate 80 can suck the substrate 40 through the holes 105 arranged on the upper surface thereof.

FIG. 11 is a schematic diagram showing the connection of the hole 105, the vacuum pump 300, the piping 310, and the valve 320.

The hole 105a and the hole 105e are connected to the pipe 310c. The holes 105b and 105d are connected to the pipe 310b. The hole 105c is connected to the pipe 310a. The piping 310c is connected to the piping 310b via a valve 320b. The piping 310b is connected to the piping 310a via a valve 320a. The piping 310 a is connected to the vacuum pump 300.

By adjusting the opening degree of the valve 320a, a time difference can be set for the pressure drop method between the pipes 310a and 310b. Similarly, by adjusting the opening degree of the valve 320b, a time difference can be set for the pressure drop method between the pipes 310b and 310c.

FIG. 12 is a graph schematically showing the relationship between the pressure and time of each pipe 310. As shown in FIG. 12, the pressure of the piping 310 a first reaches a specific pressure a. In addition, the pressure of the piping 310b arrives next, and the pressure of the piping 310c arrives at the latest.

That is, among the holes on the upper surface of the heating plate 80, the hole 105c at the center is sucked fastest, followed by the holes 105b and 105d at the outer side in a later time, and the holes 105a and 105a 105e performs suction.

In other words, at the beginning of suction, the suction force of the substrate 40 through the hole 105c increases faster than the suction force through the holes 105b and 105d, and the suction force through the holes 105b and 105d is faster than that through the holes 105a and 105e. The suction force increases faster. Furthermore, in other words, the substrate 40 is adsorbed fastest in the first region 85c, followed by the substrate 40 being adsorbed in the first regions 85b and 85d, and finally the substrate 40 is adsorbed in the first regions 85a and 85e.

In addition, the suction timing of the holes 105b and 105d may be simultaneous or staggered. Similarly, the suction timing of the holes 105a and 105e is the same.

In this way, the substrate 40 is sequentially adsorbed to the heating plate 80 from the center by the difference in the time of the adsorption installation time on the upper surface of the heating plate 80. That is, warpage, undulations, and the like generated in the substrate 40 can be retracted from the center to the outside. That is, it is possible to reduce the offset and the like of the substrate 40 as in the first embodiment.

(Modification of the second embodiment)

The second embodiment can be combined with the jig 100 of the first embodiment as well as It can be combined with the jig 100 'of the comparative example of the first embodiment. Since the modification of the jig 100 is not required, the combination with the jig 100 'has the advantage that it can be economically realized.

In addition, the timing at which the substrate 40 is attracted to the upper surface of the heating plate 80 and the timing at which the substrate 40 is sandwiched between the jig 100 and the heating plate 80 may be either first or simultaneous.

FIG. 13 is a modification example in which the arrangement of the holes 105 is changed. The central hole 105c 'is suctioned first, the holes 105b' and 105d 'are suctioned later, and 105a' and 105e 'are suctioned last. As such, the configuration of the holes 105 can be any configuration.

FIG. 14 is a schematic diagram showing the connection of the hole 105, the vacuum pump 300, the piping 310, and the cavity 340 according to a modified example of changing the thickness of the piping 310 '.

The connection relationship is the same as that in FIG. 11, so only the differences will be described.

In the second embodiment, the piping 310c 'is connected to the piping 310b' via a valve, but in this modification, it is connected via a cavity 340b. Similarly, the pipe 310b 'is connected to the pipe 310a' via the cavity 340a.

The thickness of each of the pipes 310 is substantially the same as that of the second embodiment. However, in this modification, each of the pipes 310 ′ is different. Specifically, the pipe 310a 'connected to the vacuum pump 300 is the thickest, the pipe 310b' is the second thickest, and the pipe 310c 'is the thinnest.

By providing a difference in the thickness of the piping 310 ′ and arranging a cavity 340 at the connection portion, the same relationship between the pressure and time of the piping 310 as in FIG. 12 can be achieved when the vacuum pump 300 performs suction.

Furthermore, in this modification, a cavity 340 is provided between the pipes 310 '. By disposing the cavity 340, it is possible to set a time difference for the decompression of the pipe 310 according to the volume (capacity) of the cavity 340. That is, the vacuum pump 300 needs to pump a corresponding amount of the volume of the cavity 340 a more before the pressure of the pipe 310 b ′ is reduced. Therefore, the pressure drop of the pipe 310 b ′ is slower than that of the pipe 310 a ′. Similarly, the piping 310c 'and 310b' can set a difference in the timing of the pressure drop.

Furthermore, it is also possible to set a difference in timing of decompression only by the capacity of the cavity 340. That is, the thickness of the piping 310 may not be set to be different as shown in FIG. 15.

In addition, as another modification, in the second embodiment described with reference to FIG. 11, a difference in thickness of the piping may be provided.

In this way, as long as the adsorption force of the hole 105c on the inner side of the substrate 40 increases faster than that of the outer hole, for example, the hole 105b and the hole 105a, the piping 310 and the hole 105 can have any configuration.

(Third Embodiment)

This embodiment will be described with reference to Figs. 16 and 17.

This embodiment is different from the second embodiment in that the timing of opening and closing the valve 350 connected to the piping 310 is controlled by the control unit 360. The valve 350a disposed between the pipes 310a and 310b and the valve 350b disposed between the pipes 310b and 310b are, for example, solenoid valves.

The valves 350a and 350b are electrically connected to the control unit 360, respectively. The control unit 360 is a part of a computer, a microcomputer, or the semiconductor manufacturing apparatus 5. The control unit 360 can open and close the valves 350a and 350b by sending electrical signals to the valves 350a and 350b.

FIG. 17 is a graph schematically showing the relationship between the pressure and time of each pipe 310.

At time t1, the vacuum pump 300 starts suction. When the vacuum pump 300 sucks, the pressure of the pipe 310a connected to the vacuum pump 300 decreases. After time t1, and after a specific time, that is, time t2, the control unit 360 opens the valve 350a. In this way, the pressure of the pipe 310b is reduced through the pipe 310a. At time t3, the control unit 360 opens the valve 350b. In this way, the pressure of the pipe 310c is reduced through the pipes 310a and 310b.

That is, by adjusting the timing of opening the valves 350a and 350b, it is possible to set a time difference for the timing of sucking the substrate 40 with the required pressure a for the holes 105c, 105b and 105d, and the holes 105a and 105e. In other words, after the vacuum pump 300 starts to suck, the valve 350a is opened after a specific time elapses, and the valve 350b is opened after a specific time has elapsed.

That is, in the third embodiment, it is possible to reduce the offset of the substrate 40 in the same manner as in the second embodiment.

(Modification of the third embodiment)

The valves 350a and 350b are not limited to a solenoid valve, and for example, a cylinder valve may be used. For example, when the opening and closing of the cylinder valve is controlled by the pressure of air, the control unit 360 is connected to the valves 350a and 350b by a gas pipe. The control unit 360 controls the opening and closing of the valve 350a or 350b by sending air to the valve 350a or 350b.

That is, the valves 350a and 350b may be opened and closed at a desired timing from the outside, and any structure may be used.

(Fourth embodiment)

This embodiment will be described using FIG. 18.

As shown in FIG. 18, the jigs 100a and 100b of this embodiment have one protruding portion 230a and 230b at each central portion.

In particular, when the time difference is set for the adsorption force of the hole 105 provided in the heating plate 80 as in the second embodiment and the third embodiment, the jig 100 may be located only in the center. That is, as long as the holes in the upper surface of the heating plate 80 are sequentially sucked after the jig 100 presses the center portion of the substrate 40 in the Y direction, the displacement of the substrate 40 can be reduced as in the other embodiments.

(Fifth Embodiment)

This embodiment will be described using FIG. 19.

As shown in FIG. 19, the jig 100 ′ according to this embodiment includes a main body portion 200 a ′ to 200 f ′ and protrusion portions 230 a ′ to 230 e ′ similarly to the first embodiment. In the following description, when there is no need to distinguish them, they are simply referred to as a main body portion 200 'and a protruding portion 230'.

The jig 100 'of this embodiment is also the same as the first embodiment. Among the protrusions 230a' ~ 230e ', the protrusion 230' which is pressed against the center of the substrate 40 is the longest and the protrusion 230 'which is pressed against the outside of the substrate 40 Shorter.

The jig 100 of this embodiment is different from the first embodiment in that the protruding portion 230 ′ can press the substrate 40 without rising relative to the main body portion 200 ′.

Specifically, for example, the protrusion 230 'may be attached to the main body 200' using an adhesive. Alternatively, the protruding portion 230 'may be provided integrally with the main body portion 200'.

In other words, the protruding portion 230 'may be fixed to the main body portion 200'.

By using such a jig 100 ', as in the fourth embodiment, the longest projection 230c' in the center can press the substrate 40.

Furthermore, according to this embodiment, the protrusions 230 ′ having a shorter length are arranged around the protrusions 230 c ′, and the protrusions 230 ′ are fixed to the body portion 200 ′. By using the jig 100 ′, the substrate 40 is supported at a position near the heating plate 80 and is easily attracted to the heating plate 80. That is, if the substrate 40 is warped to a large extent above the heating plate 80 due to warping, undulations, or the like, it may be difficult to attract the substrate 40 to the heating plate 80. According to this embodiment, not only the central portion but also the outer peripheral portion of the substrate 40 is pressed against the protruding portion 230 ′ of the jig 100 ′, so it is easy to avoid such a problem.

Although the embodiment of the present invention has been described, this embodiment is provided as an example, and is not intended to limit the scope of the invention. This novel embodiment can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. This embodiment or a variation thereof is included in the scope or gist of the invention, and is included in the invention described in the scope of patent application and its equivalent scope.

Claims (17)

A semiconductor manufacturing device includes: a guide rail capable of supporting a substrate and extending in a first direction; a heating plate disposed below the guide rail; a first clamp disposed above the guide rail; and a first protruding portion and The second protruding portion is capable of sandwiching the substrate between the heating plate and the second protruding portion. The second protruding portion is disposed in the first jig and is arranged side by side in a second direction crossing the first direction. The first protruding portion can clamp the position of the substrate closer to the central portion, and the distance between the front end of the first protruding portion and the heating plate side surface of the first jig is larger than the front end of the second protruding portion and the first The distance of the above-mentioned side surface of the heating plate of the jig is longer. The semiconductor manufacturing apparatus according to claim 1, further comprising a third protruding portion provided in the first jig, and the third protruding portion can sandwich the outer side of the substrate than the second protruding portion, and the third The distance between the front end of the protruding portion and the heating plate side surface of the first jig is shorter than the distance between the front end of the protruding portion and the heating plate side surface of the first jig. The semiconductor manufacturing apparatus according to claim 1, further comprising: a second jig that is disposed above the guide rail; and a fourth projection and a fifth projection that can sandwich the substrate between the heating plate and the heating plate. And disposed on the second jig and arranged side by side in the second direction; compared with the fifth protrusion, the fourth protrusion can clamp a relatively central portion of the substrate, and the length of the fourth protrusion is longer than the first The five protrusions are longer, and the first jig and the second jig are disposed spaced apart from each other in the first direction via the heating plate. The semiconductor manufacturing apparatus according to claim 3, wherein the first jig is provided integrally with the second jig. The semiconductor manufacturing apparatus according to claim 1, wherein the first protruding portion has a first spring, the second protruding portion has a second spring, and the first jig can use the resilience of the first spring and the second spring to The substrate is clamped. The semiconductor manufacturing apparatus according to claim 1, wherein the first protruding portion and the second protruding portion have an elastic material at least at a front end thereof. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus further has a suction section for sucking the substrate, and the heating plate has on its upper surface a member connected to the suction section so as to be able to suck the substrate. A plurality of holes, the upper surface has a first region and a second region in a second direction crossing the first direction, and the first region is disposed closer to the center side of the substrate than the second region, and When the suction section sucks the substrate, the suction force of the first region through the hole increases faster than the suction force of the second region through the hole. The semiconductor manufacturing apparatus according to any one of claims 1 to 7, which can be bonded on the heating plate. A semiconductor manufacturing apparatus includes: a guide rail capable of supporting a substrate and extending in a first direction; a heating plate disposed below the guide rail and provided with an upper surface having a plurality of holes; and a suction portion connected to The plurality of holes can suck the substrate through the holes; the upper surface has a first region and a second region in a second direction crossing the first direction, and the first region is disposed more than the second region. It is near the center of the substrate, and the first region can suck the substrate earlier than the second region. The semiconductor manufacturing apparatus according to claim 9, wherein when the suction section starts to suck the substrate, the suction force of the first region through the hole is faster than the suction force of the second region through the hole. Increase. The semiconductor manufacturing apparatus according to claim 9, further comprising: a first pipe connected to the hole and the suction portion in the first area; and a second pipe connected to the hole in the second area and The first pipe is disposed; and a valve is disposed between the first pipe and the second pipe. The semiconductor manufacturing apparatus according to claim 9, further comprising: a first pipe connected to the hole and the suction portion in the first area; and a second pipe connected to the hole in the second area and The first pipe is disposed; and a cavity is disposed between the first pipe and the second pipe. The semiconductor manufacturing apparatus according to claim 9, further comprising: a first pipe connected to the hole and the suction portion in the first region; and a second pipe connected to the hole in the second region. And the first pipe; and the inner diameter of the first pipe is thicker than the second pipe. The semiconductor manufacturing apparatus according to claim 9, wherein the upper surface has a third region in the second direction, the third region is disposed on the outer side of the substrate than the second region, and the suction is performed by the suction portion. In the case of the substrate, the suction force through the holes in the second region increases faster than the suction force through the holes in the third region. The semiconductor manufacturing apparatus according to claim 9, further comprising: a first pipe connected to the hole and the suction portion in the first area; and a second pipe connected to the hole in the second area and The first piping is disposed; a valve is disposed between the first and second piping; and a control section capable of controlling opening and closing of the valve; and the control section passes after the suction section starts to suck. After a certain time, the valve is opened and closed. The semiconductor manufacturing apparatus according to claim 9, further comprising a first jig, which is disposed above the guide rail and has a first protruding portion capable of sandwiching the substrate with the heating plate. The semiconductor manufacturing apparatus according to any one of claims 9 to 16, which can be bonded on the heating plate.