TWI635196B - 矽硫族化物前驅物、形成矽硫族化物前驅物之方法及形成氮化矽及半導體結構之相關方法 - Google Patents
矽硫族化物前驅物、形成矽硫族化物前驅物之方法及形成氮化矽及半導體結構之相關方法 Download PDFInfo
- Publication number
- TWI635196B TWI635196B TW106124430A TW106124430A TWI635196B TW I635196 B TWI635196 B TW I635196B TW 106124430 A TW106124430 A TW 106124430A TW 106124430 A TW106124430 A TW 106124430A TW I635196 B TWI635196 B TW I635196B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- substituted
- precursor
- reacting
- nitrogen
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 164
- 239000010703 silicon Substances 0.000 title claims abstract description 152
- 239000002243 precursor Substances 0.000 title claims abstract description 148
- 238000000034 method Methods 0.000 title claims abstract description 76
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 73
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 239000004065 semiconductor Chemical group 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 54
- -1 silicon chalcogenide Chemical class 0.000 claims abstract description 125
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 42
- 125000003368 amide group Chemical class 0.000 claims abstract description 42
- 125000005843 halogen group Chemical class 0.000 claims abstract description 39
- 150000001412 amines Chemical class 0.000 claims abstract description 31
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 20
- 125000000547 substituted alkyl group Chemical group 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 18
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011669 selenium Chemical group 0.000 claims abstract description 17
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 12
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 11
- 239000011593 sulfur Substances 0.000 claims abstract description 11
- 229910052714 tellurium Chemical group 0.000 claims abstract description 11
- 150000002431 hydrogen Chemical class 0.000 claims abstract 9
- 150000001298 alcohols Chemical class 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 48
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 238000000231 atomic layer deposition Methods 0.000 claims description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 150000001787 chalcogens Chemical class 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052798 chalcogen Inorganic materials 0.000 claims description 11
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 239000003153 chemical reaction reagent Substances 0.000 claims description 6
- 125000001979 organolithium group Chemical group 0.000 claims description 6
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 claims description 4
- 239000005049 silicon tetrachloride Substances 0.000 claims description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- XKLVLDXNZDIDKQ-UHFFFAOYSA-N butylhydrazine Chemical compound CCCCNN XKLVLDXNZDIDKQ-UHFFFAOYSA-N 0.000 claims description 2
- NNOVOXCGEFMJRK-UHFFFAOYSA-N [Li]C.[SeH2] Chemical compound [Li]C.[SeH2] NNOVOXCGEFMJRK-UHFFFAOYSA-N 0.000 claims 2
- 239000000463 material Substances 0.000 description 41
- 230000008569 process Effects 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 12
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 12
- 230000004913 activation Effects 0.000 description 9
- 230000009257 reactivity Effects 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000003446 ligand Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012686 silicon precursor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000001335 aliphatic alkanes Chemical group 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- WFXDZZWXRHZFGR-UHFFFAOYSA-N C[Se]C.[Li] Chemical compound C[Se]C.[Li] WFXDZZWXRHZFGR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- 238000001321 HNCO Methods 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OWIKHYCFFJSOEH-UHFFFAOYSA-N Isocyanic acid Chemical compound N=C=O OWIKHYCFFJSOEH-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 208000034809 Product contamination Diseases 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- JHAYEQICABJSTP-UHFFFAOYSA-N decoquinate Chemical group N1C=C(C(=O)OCC)C(=O)C2=C1C=C(OCC)C(OCCCCCCCCCC)=C2 JHAYEQICABJSTP-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BLHLJVCOVBYQQS-UHFFFAOYSA-N ethyllithium Chemical compound [Li]CC BLHLJVCOVBYQQS-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002497 iodine compounds Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- AIFMYMZGQVTROK-UHFFFAOYSA-N silicon tetrabromide Chemical compound Br[Si](Br)(Br)Br AIFMYMZGQVTROK-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/025—Silicon compounds without C-silicon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3211—Nitridation of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本發明揭示一種矽硫族化物前驅物，其包含化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。本發明亦揭示形成該矽硫族化物前驅物之方法、形成氮化矽之方法及形成半導體結構之方法。
Description
本文所揭示之實施例係關於半導體製作，其包括用於形成氮化矽之前驅物化合物、形成前驅物化合物之方法、形成氮化矽之方法及形成半導體結構之方法。更具體而言，本發明之實施例係關於矽硫族化物前驅物、形成矽硫族化物前驅物之方法、使用矽硫族化物前驅物形成氮化矽之方法及形成半導體結構之方法。
氮化矽(SiN)係製造積體電路(IC)廣泛使用之材料。由於其低反應性及高熱穩定性，氮化矽用作絕緣材料、遮罩材料、蝕刻終止材料、障壁材料、間隔材料等。 形成SiN之技術包括物理氣相沈積(PVD)及化學氣相沈積(CVD)，例如高溫熱CVD或電漿增強之CVD (PECVD)。在一個製程中，使矽烷(SiH4
)與氨(NH3
)反應以形成SiN。可使用其他矽前驅物，例如鹵化矽，包括氟化矽、氯化矽、碘化矽或溴化矽。鹵化矽之實例包括(但不限於)四氯化矽(SiCl4
)或二氯矽烷(SiCl2
H2
)、三氯矽烷(SiHCl3
)、HSiI3
、H2
SiI2
、H3
SiI、H2
Si2
I4
、H4
Si2
I2
或H5
Si2
I。為形成高品質SiN，在高溫(通常高於750℃)下進行PVD及CVD製程。然而，該等溫度與當前IC中所使用之材料不相容，其中一些具熱敏性。另外，使用鹵化矽作為矽前驅物係不合意的，此乃因產生諸如鹽酸(HCl)之反應性鹵化物物質作為副產物。已知反應性鹵化物物質蝕刻半導體製作中所用之材料，例如含矽材料。 原子層沈積(ALD)亦已用於形成SiN。矽烷、鹵化矽及氨CVD前驅物在高溫下或在電漿環境中具有足夠反應性以藉由ALD形成SiN。然而，前驅物在低溫下或無電漿之情形下無足夠反應性。儘管已使用電漿增強之ALD (PEALD)來形成SiN，且與CVD製程之保形性及沈積溫度相比，已達成增加之保形性及增加之沈積溫度，但SiN之階梯覆蓋之保形性不足以覆蓋當前IC中所存在之複雜形貌。另外，在PEALD製程之電漿部分期間所產生之激發物質對IC上之暴露材料無選擇性，且因此出現激發物質與暴露材料之間之不期望反應。即使在不存在電漿之情況下，亦需要謹慎地選擇矽前驅物以避免該等不期望之反應，該等不期望之反應可導致IC性能之退化。 亦已提出基於矽烷胺之化合物，例如雙[(二甲基胺基)甲基矽基](三-甲基矽基)胺、雙[(二乙基胺基)二甲基矽基](三甲基矽基)胺或參[(二乙基胺基)-二甲基矽基]胺作為矽前驅物用於ALD製程。 隨著SiN之沈積需求變得愈加嚴格，上文所提及之技術已不能以期望之保形度及在低溫下形成SiN。
優先權主張 本申請案主張於2016年7月20日提出申請之美國專利申請案第15/215,102號「Silicon Chalcogenate Precursors，Methods of Forming the Silicon Chalcogenate Precursors，and Related Methods of Forming Silicon Nitride and Semiconductor Structures」之申請日期之益處。 本發明揭示矽硫族化物前驅物，同樣揭示形成矽硫族化物前驅物之方法及使用矽硫族化物前驅物形成氮化矽(SiN)之方法。可在低溫及不使用電漿之情形下藉由ALD製程在基板上形成SiN。矽硫族化物前驅物可與還原劑充分反應，以在ALD製程之反應條件下形成SiN同時仍展現穩定性。藉由本發明之方法形成之SiN可具有高保形度，例如大於約90%之階梯覆蓋，使得SiN能夠在高密度、高縱橫比之半導體結構上形成。由於SiN係在低溫下形成，故本發明之方法與可在ALD製程期間暴露之熱敏性材料相容。另外，儘管矽硫族化物前驅物可包括鹵素原子，但本發明之方法不產生反應性含鹵素物質(即，不含反應性含鹵素物質)且不使用電漿(即，無電漿)。因此矽硫族化物前驅物係鹵化矽前驅物之適宜替代物。 如本文所用術語「矽硫族化物」意指並包括包含至少一個矽原子及至少一個硫族元素原子之化合物，且包括至少一個矽-硫族元素鍵。矽硫族化物類似於矽醇鹽，只是用硫原子、硒原子或碲原子替代矽醇鹽之氧原子。硫族元素包括週期表第VI族之元素，例如硫、硒或碲。 如本文所用術語「氮化矽」意指並包括包含矽原子及氮原子之化合物。氮化矽可包括化學計量量之矽及氮(例如，Si3
N4
)或可包括非化學計量量之矽及氮(例如，Six
Ny
)，其中x及y中之每一者獨立地係約0.5至約2.0之有理數。氮化矽亦可包括Si(CH)x
Ny
，其中x及y中之每一者獨立地係約0至約2.0之有理數。 如本文所用術語「基板」意指並包括在其上形成其他材料之基底材料或構築體。基板可係半導體基板、支撐結構上之基底半導體層、金屬電極或其上形成有一或多個材料、層、結構或區域之半導體基板。半導體結構上之材料可包括(但不限於)半導電材料、絕緣材料、導電材料等。該等材料中之一或多者可具熱敏性。基板可為習用矽基板或包含半導電材料層之其他塊狀基板。如本文所用術語「塊狀基板」不僅意指並包括矽晶圓，而且意指並包括絕緣體上矽(「SOI」)基板(例如，藍寶石上矽(「SOS」)基板及玻璃上矽(「SOG」)基板)、基底半導體底座上之矽之磊晶層及其他半導體或光電材料(例如，矽-鍺、鍺、砷化鎵、氮化鎵及磷化銦)。基板可經摻雜或未經摻雜。 如本文所用術語「縱橫比」意指並包括特徵之高度對特徵之寬度的比率。 以下說明提供具體細節(例如，材料類型、材料厚度及處理條件)，以便提供對本文所述實施例之透徹說明。然而，熟習此項技術者將理解，可在不採用該等具體細節之情形下實踐本文所揭示之實施例。實際上，實施例可結合半導體工業中所採用之習用製作技術來實踐。另外，本文所提供之說明不形成半導體結構之完整說明或製造半導體結構之完整製程流程，且下文所闡述之結構不形成完整之半導體結構。下文僅詳細地闡述理解本文所述實施例所必需之彼等製程措施及結構。形成包括本文所述結構之完整半導體結構之其他措施可藉由習用技術來實施。 矽硫族化物前驅物可具有化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基或鹵化物基團，且n係1、2、3或4。獨立地選擇X、R1
及R2
之每一者，以提供矽硫族化物前驅物與還原劑期望之反應性並提供矽硫族化物前驅物期望之穩定性。各R2
可獨立地包括直接或間接鍵結至矽原子之鹵素原子，而剩餘取代基(即，R1
)僅包括間接鍵結至矽原子之鹵素原子(若其存在)。因此，矽硫族化物前驅物中可存在多個鹵素原子。 如本文所用術語「烷基」意指並包括包含1個碳原子(C1
)至10個碳原子(C10
) (例如1個碳原子(C1
)至6個碳原子(C6
))之飽和、不飽和、直鏈、具支鏈或環狀烴鏈。 如本文所用術語「醇鹽」意指並包括連接至氧原子之烷基，包括(但不限於)甲氧基、乙氧基、丙氧基、丁氧基、戊氧基、己氧基、庚氧基、辛氧基、壬氧基或癸氧基，或經烷氧基取代之烷氧基(例如，聚醚基團)，例如甲氧基甲氧基、甲氧基乙氧基、乙氧基甲氧基、乙氧基乙氧基、甲氧基乙氧基乙氧基等。 如本文所用術語「經取代」意指並包括官能基之其中一或多個氫原子由另一官能基替代，例如烷基、醇鹽基、醯胺基、胺基或鹵素基團。 如本文所用術語「醯胺」意指並包括-NR'R''基團，其中R'及R''獨立地係烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團。 如本文所用術語「胺」意指並包括-NH2
基團。 如本文所用術語「鹵素」意指並包括氟、氯、溴或碘。 矽硫族化物前驅物可具有以下化學式：(Si(XR1
)(R2
)(R3
)(R4
))， 其中X、R1
及R2
係如上文所定義且R3
及R4
中之每一者獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基或鹵化物基團。矽硫族化物前驅物可替代地包括2、3或4個直接鍵結至矽原子之-X-基團，例如Si(XR1
)(XR2
)(R3
)(R4
)、Si(XR1
)(R2
)(XR3
)(R4
)、Si(XR1
)(XR2
)(R3
)(XR4
)、Si(XR1
)(XR2
)(XR3
)(R4
)、Si(XR1
)(R2
)(XR3
)(XR4
)或Si(XR1
)(XR2
)(XR3
)(XR4
)。在一個實施例中，矽硫族化物係矽四甲基硒化物(silicon tetramethylselenoate；Si(Se(CH3
)4
))。 X、R1
及R2
基團及n之值可基於SiN之期望應用來選擇。例如，若期望高度反應性及穩定性之矽硫族化物前驅物，則矽硫族化物前驅物可包括4個硫族元素原子，例如具有化學式Si(XR1
)(XR2
)(XR3
)(XR4
)之化合物。然而，若需要較低反應性及穩定性之矽硫族化物前驅物，則矽硫族化物前驅物可包括較少硫族元素原子，即具有以下化學式之化合物：Si(XR1
)(R2
)(R3
)(R4
)、Si(XR1
)(XR2
)(R3
)(R4
)、Si(XR1
)(R2
)(XR3
)(R4
)、Si(XR1
)(XR2
)(R3
)(XR4
)、Si(XR1
)(XR2
)(XR3
)(R4
)或Si(XR1
)(R2
)(XR3
)(XR4
)。 若存在鹵素原子以在與還原劑之反應性與穩定性之間提供期望之平衡，則R2
、R3
及R4
中之每一者皆可包括直接或間接鍵結至矽原子之鹵素原子。舉例而言，預計R2
、R3
及R4
中之每一者皆可包括直接或間接鍵結至矽原子之鹵素原子。若R1
上存在鹵素原子，則鹵素原子藉助硫族元素原子X間接鍵結至矽原子。在其中僅R1
包括鹵素原子之情形中，鹵素原子係藉助硫族元素原子X間接鍵結至矽硫族化物前驅物之矽原子。因此，在R1
位無直接矽-鹵素鍵，此乃因硫族元素原子直接鍵結至矽原子，且鹵素原子直接鍵結至硫族元素原子。在其中R2
、R3
或R4
中之一或多者包括鹵素原子之情形中，鹵素原子可直接或間接鍵結至矽原子。為提供矽硫族化物前驅物之反應性與穩定性之期望平衡，R2
、R3
或R4
中之一或多者獨立地包括直接或間接鍵結至矽原子之鹵素原子，而剩餘取代基(即，R1
)僅包括間接鍵結至矽原子之鹵素原子(若其存在)。 因此，本發明揭示矽硫族化物前驅物且其包含化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。 根據本發明實施例之矽硫族化物前驅物與還原劑(例如，含氮前驅物)充分反應，以藉由ALD製程形成SiN。然而，矽硫族化物前驅物亦足夠穩定以在ALD製程之蒸氣遞送條件下使用。矽硫族化物前驅物展現與習用鹵化矽前驅物相似的與還原劑之反應性。含氮前驅物可包括(但不限於)氨(NH3
)、肼(N2
H4
)、第三丁基肼、單烷基肼、二烷基肼或其組合。在一個實施例中，含氮前驅物係氨。矽硫族元素前驅物用作SiN之矽源且含氮前驅物用作SiN之氮源。 儘管根據本發明實施例之矽硫族化物前驅物可包括多個鹵素原子，然而矽硫族化物前驅物可與存在於基板上且在ALD製程期間暴露之敏感材料相容，此乃因不產生反應性含鹵素物質作為副產物。因此，在ALD製程期間未觀察到鹵化物副產物污染。 可藉由使有機鋰試劑或格氏試劑(Grignard reagent)與硫族元素源化合物反應，以產生有機鋰硫族元素化合物來形成矽硫族化物前驅物。有機鋰試劑可端視矽硫族化物前驅物之期望R1
及R2
基團來適當地選擇。有機鋰可包括烷基鋰試劑，例如甲基鋰、乙基鋰等。硫族元素源化合物可端視矽硫族化物前驅物之期望硫族元素來適當地選擇。硫族元素源化合物可係元素硫、元素硒、元素碲或其組合。然後可使有機鋰硫族元素化合物與鹵化矽化合物反應，以形成矽硫族化物前驅物。鹵化矽可包括(但不限於)矽及氟之化合物、矽及氯之化合物、矽及溴之化合物或矽及碘之化合物。有機鋰硫族元素化合物及鹵化矽可在(例如)低於室溫或低於0℃之低溫下反應，以產生矽硫族化物前驅物。 因此，本發明揭示形成矽硫族化物前驅物之方法。該方法包含使有機鋰試劑與硫族元素源化合物反應，以產生有機鋰硫族元素化合物。使有機鋰硫族元素化合物與鹵化矽化合物反應，以形成矽硫族化物前驅物。矽硫族化物前驅物包含化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。 為藉由ALD形成SiN，可將矽硫族化物前驅物及含氮前驅物相繼引入含有基板之反應器中並使前驅物與基板表面反應。可將矽硫族化物前驅物引入反應器中，使其與基板反應並將過量未反應之矽硫族化物前驅物自反應器吹掃出，以在基板上形成矽。可形成單層或較少之矽。然後可將含氮前驅物引入反應器中，使其與基板上之矽反應，並將過量未反應之含氮前驅物自反應器吹掃出，以在矽上形成氮。可形成單層或更少之氮。反應器可係習用反應室或習用沈積室，例如習用ALD反應器或習用CVD反應器，在此不對其進行詳細闡述。在ALD製程期間，使來自矽硫族化物前驅物之矽及來自含氮前驅物之氮吸附至基板表面。可逆轉引入矽硫族化物前驅物及含氮前驅物之順序，使得將含氮前驅物引入反應器中，與基板表面反應並將過量未反應之含氮前驅物自反應器吹掃出，以在基板上形成氮。然後，可將矽硫族化物前驅物引入反應器中，與氮反應，並將過量未反應之矽硫族化物前驅物自反應器吹掃出，以在氮上形成矽。矽硫族化物前驅物及含氮前驅物之引入可視情況包括載氣，例如氦、氬、氮或其組合。可將相繼引入矽硫族化物前驅物及含氮前驅物之製程重複期望之循環數，直至獲得期望厚度之SiN為止。在每次引入矽硫族化物前驅物及含氮前驅物中間，反應器可視情況經吹掃氣體吹掃，以去除未反應之矽硫族化物前驅物及含氮前驅物或反應副產物。吹掃氣體可係惰性氣體，例如氦、氬、氮或其組合。 在其中含氮前驅物係氨之實施例中，ALD製程可根據以下反應來進行： Si(XR1 n
)R2 4-n
+ NH3
à Six
Ny
+ HXR1
+ HR2
。 ALD製程可在小於或等於約350℃、例如小於或等於約250℃之溫度下進行。在發生ALD製程時，反應器內及基板之溫度可為約350℃或低於約350℃。相對於形成SiN之習用高溫熱CVD、PECVD或PVD製程之溫度，形成SiN之低溫可降低熱預算。低溫亦可使得能夠保形地形成SiN，但敏感材料存在於基板上。不受限制，敏感材料可包括(但不限於)硫族化物材料、有機(例如，碳)材料、碳同素異形體(例如，石墨)、反應性金屬(例如，鎢、鋁或鉭)或其他敏感材料。因此，SiN可毗鄰此等敏感材料形成，而不降解、分解或以其他方式負面地影響該等材料。 可將矽硫族化物前驅物、含氮前驅物及吹掃氣體中之每一者以約1標準立方公分(sccm)至約2000sccm (例如約1 sccm至約1000 sccm)之流速引入反應器中。矽硫族化物前驅物及含氮前驅物中之每一者皆可在反應器中存留約0.1秒至100秒範圍內之時間量，足以使矽硫族化物前驅物與含氮前驅物反應。 矽硫族化物前驅物及含氮前驅物可具有足夠反應性，使得不需要電漿。因此，ALD製程可在不生成電漿之情形下進行。然而，端視基板上毗鄰及暴露材料之熱敏性，可使用電漿來增加矽硫族化物前驅物與含氮前驅物之反應性。例如，若基板上之毗鄰及暴露材料不具熱敏性或具較小熱敏性，則可增加沈積溫度或可使用電漿。可在反應器中生成電漿(例如，直接電漿)或可在反應器外生成電漿並供應至反應器(例如，遠程電漿)。 不受任何理論束縛，據信根據本發明實施例之矽硫族化物前驅物穩定，但展現與習用鹵化矽前驅物相似的與含氮前驅物之反應性。因此，根據本發明實施例之矽硫族化物前驅物熱穩定且不易於分解。僅舉例而言，若矽硫族化物前驅物係矽四甲基硒化物(Si(SeCH3
)4
)，則矽硫族化物前驅物可根據以下路徑之一分解：
據信，分解路徑之高活化能(Ea
) (即，能量障壁)及吸熱性質為矽硫族化物前驅物提供期望之性質。 因此，本發明揭示形成SiN之方法。該方法包含使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽。矽硫族化物前驅物包含化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。 因此，本發明揭示另一形成SiN之方法。該方法包含使矽硫族化物前驅物與基板反應以在基板上形成矽，使矽與含氮前驅物反應以在矽上形成氮，及重複使矽硫族化物前驅物反應及使矽與含氮前驅物反應之措施。矽硫族化物前驅物包含化學式Si(XR1
)n
R2 4-n
，其中X係硫、硒或碲，R1
係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2
獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。 僅舉例而言，可形成厚度在幾個單層至約100 nm(例如約1 nm至約100 nm或約5 nm至約50 nm)範圍內之SiN。然而，亦可形成更大厚度之SiN。 本文所包括之圖解說明並非意欲為任何具體半導體結構之實際視圖，而僅係為闡述本文實施例所採用之理想化代表圖。因此，圖解說明可不按比例繪製。 如圖1中所顯示，SiN 100可在半導體結構102上保形地形成，該半導體結構具有至少一個具有高縱橫比之特徵104。半導體結構102可包括基板106，其具有界定特徵104之開口108。端視SiN 100之期望應用，基板106可係半導電材料、絕緣材料或導電材料。僅舉例而言，半導電材料可係矽、氧化矽、鎵等。僅舉例而言，絕緣材料可係二氧化矽、二氧化鉿、氧化鋁。僅舉例而言，導電材料可係金屬、導電摻雜之矽、導電摻雜之鍺、金屬矽化物、金屬碳化物、相變材料等。基板106之材料可藉由習用技術形成，例如物理氣相沈積(PVD)、化學氣相沈積(CVD)或原子層沈積(ALD)。此等技術為業內已知，且因此在本文中不進行詳細闡述。如圖1中所顯示，特徵104係自基板106之材料形成。然而，基板106可在其上包括組成特徵104之一或多個材料、層、結構或區域，例如堆疊結構。堆疊結構之材料可藉由習用技術形成，在本文中不對其進行詳細闡述。特徵104可具有高縱橫比，例如至少10:1(例如至少12:1或至少15:1)之縱橫比。根據本發明之實施例，SiN 100可於特徵104上方形成。或者，SiN 100可在半導體結構102上作為平面層形成(未顯示)。SiN可在任何半導體裝置結構(例如，電晶體、記憶體、邏輯裝置、記憶體陣列等)中用作絕緣材料、遮罩材料、蝕刻終止材料、障壁材料或間隔材料。半導體裝置結構可包括至少一個高縱橫比特徵。 因此，本發明揭示形成半導體結構之方法。該方法包含形成包含至少一個縱橫比大於約10之特徵之基板，及使矽硫族化物前驅物與含氮前驅物反應以在至少一個特徵上形成氮化矽。 儘管上文闡述藉由ALD製程形成SiN之方法，但矽硫族化物前驅物亦可在CVD製程中用作矽前驅物。該CVD製程實質上可如上文所闡述，只是矽硫族化物前驅物及含氮前驅物係同時引入CVD反應器中，且適當操作條件係針對CVD製程所選擇。 以下實例用於更詳細地解釋本發明之實施例。對於本發明之範圍而言，不應將該等實例理解為詳盡的或排他的。 實例 矽四甲基硒化物之合成 如在以下反應方案中所顯示，使略微過量之甲基鋰(MeLi)與硒(Se)在四氫呋喃或二甘二甲醚中反應，以形成甲基硒化鋰(LiSeMe)。使四當量之LiSeMe與四氯化矽在-76℃下反應，以形成矽四甲基硒化物，將其回收。。 活化能及能量變化計算 針對Si(SeCH3
)4
與NH3
之反應進行密度泛函理論(DFT)計算。為比較，針對SiCl4
與NH3
之反應進行相似計算。所計算之活化能(Ea
)及能量變化(dE)顯示於下文中：
經測定，兩個反應皆放熱並展現相似的能量障壁(分別為132.1 kJ/mol及116 kJ/mol)。 矽四甲基硒化物及四氯化矽對氨相當之反應性係另人驚訝的，此乃因其中氧原子替代硫族元素原子之類似前驅物不具相似反應性。 不同矽-配體系統對Ea
/dE之效應 計算不同矽-配體(Si-R)系統與氨之反應之活化能(Ea
) (即，能量障壁)及能量變化(dE)，以測定配體(R)對鍵強度之效應。配體包括H、I、Cl、CN、NCO或SeCH3
。圖2顯示對於每一Si-R系統活化能(Ea
)隨能量變化(dE)而變化之圖形。端視所使用之Si-R系統，產生H2
、HCl、HCN、HI、HNCO或MeSeH作為副產物。展現MeSeH消除之矽硫族化物前驅物較展現H2
消除之Si-R系統具有更低活化能。儘管其他Si-R系統較包括硒之彼等展現更低活化能，但該等Si-R系統之dE不如包括硒之Si-R系統有利。包括硒之Si-R系統較矽-氯系統具有略微更高之活化能。然而，由於矽-SeCH3
系統不產生鹵化物副產物，故未觀察到與材料之不期望蝕刻相關之問題。 儘管已結合各圖闡述某些說明性實施例，但熟習此項技術者將認識到並瞭解，本發明所涵蓋之實施例並不限於本文中明確顯示並闡述之彼等實施例。而是，可在不背離本發明所涵蓋實施例範圍之情形下對本文所闡述之實施例進行許多添加、刪除及修改，例如後文中所主張之彼等，包括合法等效內容。另外，可將來自一個所揭示實施例之特徵與另一所揭示實施例之特徵組合，同時仍涵蓋在本發明之範圍內。
100‧‧‧SiN
102‧‧‧半導體結構
104‧‧‧特徵
106‧‧‧基板
108‧‧‧開口
102‧‧‧半導體結構
104‧‧‧特徵
106‧‧‧基板
108‧‧‧開口
圖1係包括氮化矽材料之半導體結構之簡化橫斷面視圖，該氮化矽材料係根據本發明之實施例形成；且 圖2係矽-配體(Si-R)系統與氨之反應之活化能(Ea
)隨能量變化(dE)而變化之圖形。
Claims (19)
- 一種形成氮化矽之方法，其包含：使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽，該矽硫族化物前驅物包含化學式Si(XR1)nR2 4-n，其中X係硫、硒或碲，R1係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含藉由原子層沈積形成該氮化矽。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含藉由化學氣相沈積形成該氮化矽。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含在基板上保形地形成該氮化矽。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含使該矽硫族化物前驅物與氨、肼、第三丁基肼、單烷基肼、二烷基肼或其組合反應。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含在小於或等於約350℃之溫度下形成該氮化矽。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含在小於或等於約250℃之溫度下形成該氮化矽。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含使該矽硫族化物前驅物與該含氮前驅物在無電漿環境中反應。
- 如請求項1之方法，其中使矽硫族化物前驅物與含氮前驅物反應以形成氮化矽包含：使該矽硫族化物前驅物與基板反應以在該基板上形成矽；使該矽與該含氮前驅物反應以在該矽上形成氮；及重複使該矽硫族化物前驅物反應及使該矽與該含氮前驅物反應之措施，以在該基板上形成該氮化矽。
- 如請求項9之方法，其中使該矽硫族化物前驅物與基板反應以在該基板上形成矽包含使包含以下各項之矽硫族化物前驅物與該基板反應：Si(XR1)(R2)(R3)(R4)、Si(XR1)(XR2)(R3)(R4)、Si(XR1)(R2)(XR3)(R4)、Si(XR1)(XR2)(R3)(XR4)、Si(XR1)(XR2)(XR3)(R4)、Si(XR1)(R2)(XR3)(XR4)或Si(XR1)(XR2)(XR3)(XR4)，其中R3及R4中之每一者獨立地係選自氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基或鹵化物基團。
- 如請求項9之方法，其中使該矽硫族化物前驅物與基板反應以在該基板上形成矽包含使矽四甲基硒化物(silicon tetramethylselenoate)與該基板反應。
- 一種形成半導體結構之方法，其包含：形成包含至少一個具有大於約10：1之縱橫比之特徵之基板；及使矽硫族化物前驅物與含氮前驅物反應以在該至少一個特徵上形成氮化矽，該矽硫族化物前驅物包含化學式Si(XR1)nR2 4-n，其中X係硫、硒或碲，R1係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4。
- 如請求項12之方法，其中使矽硫族化物前驅物與含氮前驅物反應以在該至少一個特徵上形成氮化矽包含在該至少一個特徵上保形地形成該氮化矽。
- 如請求項12之方法，其中形成包含至少一個具有大於約10：1之縱橫比之特徵之基板包含在熱敏性基板上形成該至少一個特徵。
- 如請求項12之方法，其中使矽硫族化物前驅物與含氮前驅物反應以在該至少一個特徵上形成氮化矽包含在至少一個可經鹵化物蝕刻之特徵上形成該氮化矽。
- 一種矽硫族化物前驅物，其包含：化學式Si(XR1)nR2 4-n，其中X係硫、硒或碲，R1係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，各R2獨立地係氫、烷基、經取代之烷基、醇鹽基、經取代之醇鹽基、醯胺基、經取代之醯胺基、胺基、經取代之胺基或鹵素基團，且n係1、2、3或4，其中該矽硫族化物前驅物並非矽四甲基硒化物。
- 一種形成如請求項16之矽硫族化物前驅物之方法，該方法包含：使有機鋰試劑與硫族元素源化合物反應以產生有機鋰硫族元素化合物；及使該有機鋰硫族元素化合物與鹵化矽化合物反應以形成該矽硫族化物前驅物。
- 如請求項17之方法，其中使有機鋰試劑與硫族元素源化合物反應包含使甲基鋰與元素硒反應以形成甲基硒化鋰。
- 如請求項17之方法，其中使該有機鋰硫族元素化合物與鹵化矽化合物反應包含使甲基硒化鋰與四氯化矽反應以形成矽四甲基硒化物。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/215,102 | 2016-07-20 | ||
| US15/215,102 US9929006B2 (en) | 2016-07-20 | 2016-07-20 | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201812074A TW201812074A (zh) | 2018-04-01 |
| TWI635196B true TWI635196B (zh) | 2018-09-11 |
Family
ID=60990105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106124430A TWI635196B (zh) | 2016-07-20 | 2017-07-20 | 矽硫族化物前驅物、形成矽硫族化物前驅物之方法及形成氮化矽及半導體結構之相關方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9929006B2 (zh) |
| EP (1) | EP3488461A4 (zh) |
| KR (1) | KR102272287B1 (zh) |
| CN (1) | CN109478496A (zh) |
| TW (1) | TWI635196B (zh) |
| WO (1) | WO2018017317A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6610151B1 (en) | 1999-10-02 | 2003-08-26 | Uri Cohen | Seed layers for interconnects and methods and apparatus for their fabrication |
| US9929006B2 (en) | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
| TWI751406B (zh) * | 2018-03-06 | 2022-01-01 | 美商應用材料股份有限公司 | 形成金屬硫系化物柱體之方法 |
| US20200381623A1 (en) * | 2019-05-31 | 2020-12-03 | Applied Materials, Inc. | Methods of forming silicon nitride encapsulation layers |
| WO2021097022A1 (en) * | 2019-11-12 | 2021-05-20 | Applied Materials, Inc. | Silyl pseudohalides for silicon containing films |
| US11658025B2 (en) | 2021-01-18 | 2023-05-23 | Applied Materials, Inc. | Chalcogen precursors for deposition of silicon nitride |
| CN114231256B (zh) * | 2021-12-31 | 2024-05-10 | 苏州荣格君新材料有限公司 | 一种磁性高石墨化碳基光热复合相变材料及其应用 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201319299A (zh) * | 2011-09-13 | 2013-05-16 | Applied Materials Inc | 用於低溫電漿輔助沉積的活化矽前驅物 |
| TW201439105A (zh) * | 2013-03-14 | 2014-10-16 | Asm Ip Holding Bv | 低溫ＳｉＮ沈積用的Ｓｉ前驅物 |
| TW201514332A (zh) * | 2013-10-03 | 2015-04-16 | Air Prod & Chem | 沉積氮化矽膜的方法 |
| US20160093484A1 (en) * | 2014-09-25 | 2016-03-31 | Micron Technology, Inc. | Methods of Forming and Using Materials Containing Silicon and Nitrogen |
| US20160148806A1 (en) * | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7419903B2 (en) | 2000-03-07 | 2008-09-02 | Asm International N.V. | Thin films |
| US6875661B2 (en) * | 2003-07-10 | 2005-04-05 | International Business Machines Corporation | Solution deposition of chalcogenide films |
| KR101097112B1 (ko) * | 2006-11-02 | 2011-12-22 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체 |
| US7960205B2 (en) * | 2007-11-27 | 2011-06-14 | Air Products And Chemicals, Inc. | Tellurium precursors for GST films in an ALD or CVD process |
| KR101435001B1 (ko) * | 2007-12-20 | 2014-08-29 | 삼성전자주식회사 | 상변화 메모리 및 그 제조 방법 |
| US8318252B2 (en) * | 2008-01-28 | 2012-11-27 | Air Products And Chemicals, Inc. | Antimony precursors for GST films in ALD/CVD processes |
| US8765223B2 (en) * | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
| US8507040B2 (en) * | 2008-05-08 | 2013-08-13 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
| US8697486B2 (en) * | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
| US9240319B2 (en) * | 2010-02-03 | 2016-01-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
| US9287113B2 (en) | 2012-11-08 | 2016-03-15 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| US9576792B2 (en) | 2014-09-17 | 2017-02-21 | Asm Ip Holding B.V. | Deposition of SiN |
| KR101723546B1 (ko) | 2014-10-20 | 2017-04-05 | 주식회사 케이씨텍 | 박막 형성방법 및 원자층 증착장치 |
| WO2016065219A1 (en) | 2014-10-24 | 2016-04-28 | Air Products And Chemicals, Inc. | Compositions and methods using same for deposition of silicon-containing film |
| US9385318B1 (en) * | 2015-07-28 | 2016-07-05 | Lam Research Corporation | Method to integrate a halide-containing ALD film on sensitive materials |
| US9601693B1 (en) * | 2015-09-24 | 2017-03-21 | Lam Research Corporation | Method for encapsulating a chalcogenide material |
| US9929006B2 (en) | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
-
2016
- 2016-07-20 US US15/215,102 patent/US9929006B2/en active Active
-
2017
- 2017-07-05 EP EP17831548.7A patent/EP3488461A4/en active Pending
- 2017-07-05 KR KR1020197004142A patent/KR102272287B1/ko active IP Right Grant
- 2017-07-05 CN CN201780044631.5A patent/CN109478496A/zh active Pending
- 2017-07-05 WO PCT/US2017/040662 patent/WO2018017317A1/en unknown
- 2017-07-20 TW TW106124430A patent/TWI635196B/zh active
-
2018
- 2018-03-06 US US15/913,218 patent/US11152205B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201319299A (zh) * | 2011-09-13 | 2013-05-16 | Applied Materials Inc | 用於低溫電漿輔助沉積的活化矽前驅物 |
| TW201439105A (zh) * | 2013-03-14 | 2014-10-16 | Asm Ip Holding Bv | 低溫ＳｉＮ沈積用的Ｓｉ前驅物 |
| TW201514332A (zh) * | 2013-10-03 | 2015-04-16 | Air Prod & Chem | 沉積氮化矽膜的方法 |
| US20160093484A1 (en) * | 2014-09-25 | 2016-03-31 | Micron Technology, Inc. | Methods of Forming and Using Materials Containing Silicon and Nitrogen |
| US20160148806A1 (en) * | 2014-11-24 | 2016-05-26 | Lam Research Corporation | Method of depositing ammonia free and chlorine free conformal silicon nitride film |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102272287B1 (ko) | 2021-07-05 |
| EP3488461A4 (en) | 2020-03-04 |
| CN109478496A (zh) | 2019-03-15 |
| US20180025906A1 (en) | 2018-01-25 |
| EP3488461A1 (en) | 2019-05-29 |
| KR20190018040A (ko) | 2019-02-20 |
| US20180197735A1 (en) | 2018-07-12 |
| US9929006B2 (en) | 2018-03-27 |
| TW201812074A (zh) | 2018-04-01 |
| WO2018017317A1 (en) | 2018-01-25 |
| US11152205B2 (en) | 2021-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI635196B (zh) | 矽硫族化物前驅物、形成矽硫族化物前驅物之方法及形成氮化矽及半導體結構之相關方法 | |
| US11651955B2 (en) | Methods of forming silicon nitride including plasma exposure | |
| KR102648942B1 (ko) | 실리콘 함유 에피택셜층을 형성하기 위한 방법 및 관련 반도체 소자 구조체 | |
| TWI757922B (zh) | 用於形成含矽及含氧薄膜之氣相沉積方法 | |
| CN101404250B (zh) | 硅碳外延层的选择性形成 | |
| KR101850666B1 (ko) | 저온에서 얇은 에피택셜 필름들을 성장시키는 방법 | |
| KR101144366B1 (ko) | 실리콘 화합물로 실리콘 함유층을 증착시키는 방법 | |
| KR101699775B1 (ko) | 실리콘-함유 박막의 제조 방법 | |
| CN104599945A (zh) | 含硅外延层的形成 | |
| TWI836199B (zh) | 提高選擇性磊晶生長之生長速率的方法 | |
| CN110431204B (zh) | 沉积含硅薄膜的含双(氨基甲硅烷基)烷基胺化合物的组合物及使用其制造含硅薄膜的方法 | |
| KR101934773B1 (ko) | 저온에서의 실리콘-함유 박막 형성방법 | |
| TWI798765B (zh) | 用於鍺種子層的組合物及使用其的方法 | |
| WO2023136860A1 (en) | Methods of epitaxially growing boron-containing structures | |
| KR20200073452A (ko) | 저온 실리콘 절연막 증착 방법 |