TWI632623B - 製造半導體裝置的方法 - Google Patents

製造半導體裝置的方法 Download PDF

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Publication number
TWI632623B
TWI632623B TW105137093A TW105137093A TWI632623B TW I632623 B TWI632623 B TW I632623B TW 105137093 A TW105137093 A TW 105137093A TW 105137093 A TW105137093 A TW 105137093A TW I632623 B TWI632623 B TW I632623B
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Taiwan
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solder
film
heat treatment
treatment step
weight
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TW105137093A
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English (en)
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TW201729305A (zh
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門口卓矢
武直矢
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豐田自動車股份有限公司
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Publication of TW201729305A publication Critical patent/TW201729305A/zh
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    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/262—Sn as the principal constituent
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Abstract

一種製造包括第一構件(10)及接合至該第一構件之第二構件(20)的半導體裝置(50)的方法，該方法包含：a)藉由在該第一構件之Ni膜上熔融含有0.9重量%或更高之Cu的第一Sn-Cu焊料(14)而在形成於該第一構件上之Ni膜(12)上產生(Cu,Ni)6Sn5；b)藉由在該第二構件之Ni膜上熔融含有0.9重量%或更高之Cu的第二Sn-Cu焊料(24)而在形成於該第二構件上之Ni膜(22)上產生(Cu,Ni)6Sn5；以及c)藉由熔融已經歷步驟a)之第一Sn-Cu焊料及已經歷步驟b)之第二Sn-Cu焊料以使該第一Sn-Cu焊料及該第二Sn-Cu焊料成為一體而彼此接合該第一構件及該第二構件。

Description

製造半導體裝置的方法
本發明關於製造半導體裝置的方法。
在半導體裝置中，例如二或多個構件(諸如半導體元件或引線框(lead frame))係使用焊料(solder)彼此接合。在兩個構件係使用焊料彼此接合的情況下，已廣泛進行在各構件之表面上提供Ni膜(諸如鎳(Ni)鍍覆)的技術以防止這兩個構件之間的接合界面中之金屬間化合物(intermetallic compound)過度生長。然而，在Ni膜曝露於高溫(例如，200℃)長時間的情況下，會在Ni膜與焊料之間產生金屬間化合物(例如，Ni3Sn4)。在此情況下，接合強度降低。
日本專利申請案公開第2007-67158號(JP 2007-67158 A)揭示使用含有Cu6Sn5之Sn-Cu焊料製造半導體裝置的方法。該製造方法包含：在兩個構件之間配置Sn-Cu焊料的步驟；及藉由加熱與熔融該Sn-Cu焊料而在各構件之Ni膜上產生(Cu,Ni)6Sn5的步驟。根據該製造方 法，在該Ni膜上產生的(Cu,Ni)6Sn5作為防止該Ni膜轉化成金屬間化合物的障壁層，因此可防止該焊料與該Ni膜之間的接合界面之接合強度降低。
在JP 2007-67158 A中所揭示之製造方法中，藉由熔融介於兩個構件之間的焊料，同時在該兩個構件之個別Ni膜上產生(Cu,Ni)6Sn5。在此情況下，當熔融介於該兩個構件之間的焊料時，包含在該焊料中之一部分Cu6Sn5移至一構件以產生(Cu,Ni)6Sn5，而另一部分Cu6Sn5移至另一構件以產生(Cu,Ni)6Sn5。此處，難以均勻加熱配置在該兩個構件之間的焊料。例如，加熱期間之焊料的溫度分布在其厚度方向會不均勻。此時，在焊料接觸一構件之區域中，焊料的溫度提高迅速，且焊料快速熔融；然而，在焊料接觸另一構件的區域中，焊料的溫度提高緩慢，且焊料熔融緩慢。在該情況下，在一構件中之(Cu,Ni)6Sn5的產生開始了，然而在另一構件中之(Cu,Ni)6Sn5的產生則延遲。結果，焊料中所包含的大部分Cu6Sn5在一構件中消耗，因而無法在另一構件中產生預定量的(Cu,Ni)6Sn5。
為了解決此問題，可考慮例如提高所使用之Sn-Cu焊料中的Cu濃度之技術。當Cu濃度提高時，焊料中所包含的Cu6Sn5之量亦增加。當焊料含有豐富量之Cu6Sn5時，即使(Cu,Ni)6Sn5係在兩個構件之間不均勻產生的情況下亦可產生這兩個構件各表面所需的(Cu,Ni)6Sn5量。然而，當Sn-Cu焊料中之Cu濃度提高時，熔融溫度 (液相溫度(liquidus temperature))亦提高(參考圖22)。因此，當所使用之Sn-Cu焊料的Cu濃度提高時，在焊料熔融步驟中必須將焊料加熱至更高溫度。例如，在JP 2007-67158 A中所揭示之製造方法中，使用含有3重量%至7重量%之Cu的Sn-Cu焊料，且其熔融溫度為約330℃至400℃。
本發明提供在各構件之Ni膜上產生預定量的(Cu,Ni)6Sn5之技術(即使是在二或多個構件係經由Sn-Cu焊料彼此接合之半導體裝置的製造方法中使用具有相對低Cu濃度之Sn-Cu焊料的情況下)。
根據本發明之一態樣的製造半導體裝置的方法係製造包括第一構件及接合至第一構件之第二構件的半導體裝置的方法，該方法包含：a)藉由在第一構件之Ni膜上熔融含有0.9重量%或更高之Cu的第一Sn-Cu焊料而在形成於第一構件上之Ni膜上產生(Cu,Ni)6Sn5；b)藉由在第二構件之Ni膜上熔融含有0.9重量%或更高之Cu的第二Sn-Cu焊料而在形成於第二構件上之Ni膜上產生(Cu,Ni)6Sn5；以及c)藉由熔融已經歷步驟a)之第一Sn-Cu焊料及已經歷步驟b)之第二Sn-Cu焊料以使第一Sn-Cu焊料及第二Sn-Cu焊料成為一體(become integrated)而令第一構件及第二構件彼此接合。第一熱處理步驟及第二熱處理步驟可同時或不同時進行。第一熱處理步驟及第二熱 處理步驟之順序無特別限制。Ni膜不限於純Ni膜，且可包括磷(P)或其他元素。
在上述製造方法中，於組合第一構件與第二構件之前，可在第一構件上進行步驟a)，且可在第二構件上進行步驟b)。在步驟a)中，使用第一Sn-Cu焊料在第一構件之Ni膜上產生(Cu,Ni)6Sn5。在步驟b)中，使用與第一Sn-Cu焊料不同之第二Sn-Cu焊料在第二構件之Ni膜上產生(Cu,Ni)6Sn5。不同於JP 2007-67158 A中所揭示之製造方法，兩個元件不共用包括在一焊料中之Cu6Sn5。因此，即使在第一及第二Sn-Cu焊料中之Cu濃度相對低的情況下，可在第一構件及第二構件之各Ni膜上產生預定量(predetermined amount)的(Cu,Ni)6Sn5。在第一Sn-Cu焊料中之Cu濃度為0.9重量%或更高之情況下，在第一構件之Ni膜上產生可作為障壁層之量的(Cu,Ni)6Sn5。此亦適用於第二Sn-Cu焊料。在步驟a)及步驟b)之後，組合第一構件及第二構件，並於其上進行步驟c)。結果，第一構件及第二構件可彼此接合。
根據上述態樣，第一Sn-Cu焊料及第二Sn-Cu焊料於步驟c)中之熔融時間可比第一Sn-Cu焊料於步驟a)中之熔融時間以及第二Sn-Cu焊料於步驟b)中之熔融時間還短。
根據上述態樣，第一Sn-Cu焊料或第二Sn-Cu焊料中至少一者可含有1.6重量%或更高之Cu。
根據上述態樣，第一構件或第二構件中至少 一者可為功率半導體元件(power semiconductor element)。
D0‧‧‧初始厚度
D1‧‧‧厚度
D2‧‧‧厚度
10‧‧‧第一構件
10a‧‧‧表面
12、22、101-104‧‧‧Ni膜
14、91a-97a‧‧‧第一焊料
16、26‧‧‧Cu6Sn5
18、28‧‧‧(Cu,Ni)6Sn5
20‧‧‧第二構件
20a‧‧‧表面
24、91b-97b‧‧‧第二焊料
30‧‧‧焊料接合層
50‧‧‧半導體裝置
52‧‧‧第一電晶體元件
52a‧‧‧底部電極
52b‧‧‧頂部電極
54‧‧‧第二電晶體元件
54a‧‧‧底部電極
54b‧‧‧頂部電極
56‧‧‧第一二極體元件
58‧‧‧第二二極體元件
60‧‧‧樹脂封裝
60a‧‧‧底表面
60b‧‧‧頂表面
62、64、66、68‧‧‧散熱件
65‧‧‧散熱件64之接頭
67‧‧‧散熱件66之接頭
69‧‧‧散熱件68之接頭
72、74、76、78‧‧‧間隔件
82‧‧‧正電極端子
84‧‧‧負電極端子
86‧‧‧輸出端子
88‧‧‧控制端子
89‧‧‧銲線
91-97‧‧‧焊料接合層
本發明之例示實施態樣的特徵、優點及技術和工業重要性將於下文參照所附圖式描述，該等圖式中相似編號表示相似元件，其中：圖1為顯示在焊接(soldering)方法之步驟中，配置有第一焊料14之第一構件10及配置有第二焊料24之第二構件20的圖；圖2為顯示在焊接方法之步驟中，已經歷第一熱處理步驟之第一構件10及已經歷第二熱處理步驟之第二構件20的圖；圖3為顯示在焊接方法之步驟中，組合已經歷第一熱處理步驟之第一構件10及已經歷第二熱處理步驟之第二構件20的狀態之圖；圖4為顯示在焊接方法之步驟中，已經歷第三熱處理步驟之第一構件10及第二構件20的圖；圖5A為顯示Ni膜12(Ni-P)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片(electron micrograph)；圖5B為顯示Ni膜12(Ni-P)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片； 圖5C為顯示Ni膜12(Ni-P)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖5D為顯示Ni膜12(Ni-P)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖5E為顯示Ni膜12(Ni-P)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖6A為顯示Ni膜12(Ni)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖6B為顯示Ni膜12(Ni)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖6C為顯示Ni膜12(Ni)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖6D為顯示Ni膜12(Ni)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片；圖6E為顯示Ni膜12(Ni)與已經歷經歷焊接(第三熱處理步驟)之焊料接合層30之間的接合界面之電子顯微照片； 圖7為顯示當改變第一焊料14與第二焊料24中之Cu濃度時進行焊接的結果之表；圖8為顯示在高溫耐久性測試(high-temperature durability test)中於第一焊料14及第二焊料24在各Cu濃度下所測量的富P層(P-rich layer)之生長的圖；圖9A為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為0.7重量%；圖9B為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為0.9重量%；圖9C為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為1.4重量%；圖9D為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為1.5重量%；圖9E為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu 濃度為1.6重量%；圖10A為顯示在進行高溫耐久性測試250小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為0.7重量%；圖10B為顯示在進行高溫耐久性測試250小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為0.9重量%；圖10C為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為1.4重量%；圖10D為顯示在進行高溫耐久性測試500小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為1.5重量%；圖10E為顯示在進行高溫耐久性測試1000小時之後介於Ni膜12(Ni-P)與焊料接合層30之間的接合界面之電子顯微照片，其中該第一焊料14及第二焊料24中的Cu濃度為1.6重量%；圖11為示意顯示半導體裝置50之透視圖；圖12為示意顯示半導體裝置50之分解圖，其中未顯示樹脂封裝60； 圖13為顯示半導體裝置50之電配置(electrical configuration)的電路圖(circuit diagram)；圖14為沿著圖11之線XIV-XIV的剖視圖；圖15為顯示圖14之XV部分的放大圖；圖16為顯示在製造半導體裝置50之方法的一個步驟中已經歷第一熱處理步驟或第二熱處理步驟之各構件的圖；圖17為顯示在製造半導體裝置50之方法的一個步驟中已組合部分構件之半成品的圖；圖18為顯示在製造半導體裝置50之方法的一個步驟中已經歷第三熱處理步驟之半成品的圖；圖19為顯示在製造半導體裝置50之方法的一個步驟中亦組合了另外之構件的半成品之圖；圖20為顯示在製造半導體裝置50之方法的一個步驟中再次經歷第三熱處理步驟之半成品的圖；圖21為顯示在製造半導體裝置50之方法的一個步驟中形成樹脂封裝60之半導體裝置50的圖；及圖22為Sn-Cu焊料的狀態圖(相圖(phase diagram))。
首先，茲將描述本說明書中所揭示的焊接方法(soldering method)。在該焊接方法中，如圖1至4所示，第一構件10及第二構件20係使用第一焊料14及第二焊料24彼此接合。該焊接方法可應用於各種工業產品 的製造。因此，第一構件10及第二構件20不限於特定構件。例如，第一構件10及第二構件20為構成半導體裝置的複數個構件其中二者。在該情況下，本說明書中所揭示的焊接方法可應用於半導體元件及導電構件(例如，引線框)之間的焊接、導電構件及導電構件之間的焊接、或半導體元件及半導體元件之間的焊接。
首先，如圖1中所示，第一焊料14係配置在第一構件10之表面10a上，而第二焊料24係配置在第二構件20之表面20a上。Ni膜12係形成於第一構件10之表面10a上。此處，Ni膜係指含有鎳(Ni)作為主要組分之金屬層，且為例如無電Ni-P鍍層(electroless Ni-P plating layer)或電鍍Ni層(electroplating Ni layer)。提供Ni膜12以防止介於第一構件10與第一焊料14之間的接合界面(joint interface)中之金屬間化合物(intermetallic compound)過度生長(excessive growth)。Ni膜12之初始厚度D0無特別限制，例如為數微米至數百微米。同樣的，Ni膜22係形成於第二構件20之表面20a上。Ni膜12、22可被金(Au)、Ag(銀)等所形成之另一金屬膜覆蓋，以防止腐蝕。在下述第一熱處理步驟或第二熱處理步驟期間當焊料14、24熔融時，金屬膜擴散至焊料14、24內。
第一焊料14及第二焊料24各為藉由將銅(Cu)添加至錫(Sn)所獲得之Sn-Cu焊料，且包括為Cu及Sn之金屬間化合物的Cu6Sn5(符號16、26)。雖然下文將說明細節，但較佳係焊料14、24各含有0.9重量%或更高 之Cu。焊料14、24各可具有不同形式，諸如薄片形式、線(wire)形式、或糊劑形式。第一焊料14中之Cu濃度及第二焊料24中之Cu濃度可相同或彼此不同。
其次，如圖2所示，進行加熱配置在第一構件10上之第一焊料14的第一熱處理步驟及加熱配置在第二構件20上之第二焊料24的第二熱處理步驟。第一熱處理步驟及第二熱處理步驟可同時或不同時進行。第一熱處理步驟及第二熱處理步驟可在彼此完全分開(physically separated)的位置進行。在第一熱處理步驟中，藉由加熱第一焊料14而將該第一焊料14熔融在第一構件10的Ni膜12上。即，在第一熱處理步驟中，該第一焊料14係加熱至熔融溫度(melting temperature)(液相點(liquid phase point))或更高。此處，從圖22之相圖可看出，Sn-Cu焊料之熔融溫度視Sn-Cu焊料中之Cu濃度而變化。當Cu濃度提高時，熔融溫度亦提高。例如，在Cu濃度為0.9重量%之情況下，Sn-Cu焊料之熔融溫度為230℃至235℃。關於此點，第一焊料14中之Cu濃度愈低愈佳。此亦適用於下述之第二焊料24。
當第一焊料14熔融時，包括在該第一焊料14中之Cu6Sn5移至Ni膜12而產生(Cu,Ni)6Sn5(符號18)。結果，第一構件10與第一焊料14彼此牢固地連接。(Cu,Ni)6Sn5覆蓋Ni膜12因而作為防止Ni3Sn4產生的障壁層。在第一熱處理步驟中，第一焊料14維持熔融的熔融時間為例如3分鐘至10分鐘。然而，熔融時間不限於 3分鐘至10分鐘，且可考慮產生預定量之(Cu,Ni)6Sn5所需時間而適當地設定。於Ni膜12上產生之(Cu,Ni)6Sn5的量視第一焊料14中之Cu濃度而變化。當Cu濃度提高時，所產生之(Cu,Ni)6Sn5的量亦增加。關於此點，第一焊料14中之Cu濃度愈低愈佳。此亦適用於下述之第二焊料24。
同樣的，在第二熱處理步驟中，藉由加熱第二焊料24而將該第二焊料24熔融在第二構件20的Ni膜22上。即，在第二熱處理步驟中，該第二焊料24係加熱至熔融溫度(液相點)或更高。當第二焊料24熔融時，包括在該第二焊料24中之Cu6Sn5移至Ni膜22而產生(Cu,Ni)6Sn5(符號28)。(Cu,Ni)6Sn5覆蓋Ni膜22因而作為防止Ni3Sn4產生的障壁層。在第二熱處理步驟中，第二焊料24維持熔融的熔融時間為例如3分鐘至10分鐘。然而，熔融時間可考慮產生預定量之(Cu,Ni)6Sn5所需時間而適當地設定。第二熱處理步驟中之熔融時間可與第一熱處理步驟中之熔融相同或不同。在第一構件10之Ni膜12及第二構件20之Ni膜22係經其他金屬膜(諸如Au或Ag)覆蓋的情況下，當焊料14、24熔融時，該等金屬膜係擴散至焊料14、24中。因此，(Cu,Ni)6Sn5亦在Ni膜12、22上產生。
其次，如圖3所示，將第一構件10及第二構件20組合以使第一焊料14及第二焊料24彼此相對。此時，第一焊料14及第二焊料24可彼此直接接觸，或可在 第一焊料14與第二焊料24之間提供其他焊料或其他構件。
其次，如圖4所示，進行加熱第一焊料14及第二焊料24之第三熱處理步驟。在該第三熱處理步驟中，將已經歷第一熱處理步驟之第一焊料14及已經歷第二熱處理步驟之第二焊料24熔融，以使第一及第二焊料14、24成為一體(become integrated)。其次，當第一焊料14及第二焊料24固化時，第一構件10與第二構件20之間形成焊料14、24成為一體之焊料接合層(solder joint layer)30，以使第一構件10與第二構件20彼此接合。在第三熱處理步驟中，當焊料14、24各僅熔融短時間時，焊料14、24可成為一體。因此，在第三熱處理步驟中，焊料14、24維持熔融的熔融時間可設為例如數秒。因此，第三熱處理步驟中之熔融時間可考慮各種條件而適當設定，及可設得比第一熱處理步驟及第二熱處理步驟中之各熔融時間更短。
在上述焊接方法中，在組合第一構件10及第二構件20之前，在第一構件10上進行第一熱處理步驟，且在第二構件20上進行第二熱處理步驟。在第一熱處理步驟中，使用第一焊料14在第一構件10之Ni膜12上產生(Cu,Ni)6Sn5。在第二熱處理步驟中，使用與第一焊料14不同之第二焊料24在第二構件20的Ni膜22上產生(Cu,Ni)6Sn5。另一方面，在相關技術之焊接方法中，係藉由熔融兩個構件之間的共用焊料，同時在兩個構件之個別 Ni膜上產生(Cu,Ni)6Sn5。在該方法中，包括在焊料中之Cu6Sn5係由這兩個構件共用。因此，在一構件中產生過量(Cu,Ni)6Sn5之情況下，另一構件中無法充分產生(Cu,Ni)6Sn5。另一方面，根據本說明書所揭示之焊接方法，包括在一焊料中之Cu6Sn5不為第一構件10及第二構件20共用。因此，即使第一焊料14及第二焊料24中之Cu濃度相對低的情況下，可在第一構件10及第二構件20之Ni膜12、22各者上產生預定量的(Cu,Ni)6Sn5。在第一焊料14及第二焊料24中之Cu濃度降低的情況下，第一焊料14及第二焊料24之熔融溫度亦各降低(參見圖22)。因此，在第一熱處理步驟中加熱第一焊料14之目標溫度以及在第二熱處理步驟中加熱第二焊料24之目標溫度可降低。在目標溫度可降低之情況下，例如，各熱處理步驟所需的能源消耗量係可減少。或者，可避免對於與第一焊料14或第二焊料24一起加熱之各種構件的負面影響。
其次，研究第一焊料14及第二焊料24中之Cu濃度。如上述，當第一焊料14中之Cu濃度提高時，於Ni膜12上產生之(Cu,Ni)6Sn5的量增加，且可形成較佳障壁層。由於此亦適用於第二焊料24，下文將說明第一焊料14作為實例。圖5A至5E顯示介於Ni膜12與已經歷焊接之焊料接合層30之間的接合界面之電子顯微照片。在圖5A至5E之各顯微照片中，第一構件10為Cu，Ni膜12為無電Ni-P鍍層。圖5A至5E之第一焊料14中的Cu濃度分別為0.7重量%、1.7重量%、2.7重量%、3.0 重量%、及3.2重量%。如圖5A所示，在第一焊料14中之Cu濃度為0.7重量%之情況下，發現(Cu,Ni)6Sn5之產生不足，以及廣泛產生Ni3SnP。所產生之富P層(產生Ni3P之層)的厚度D1亦是大的。此處，富P層(P-rich layer)之厚度D1與Ni膜12中所消耗的Ni量相關。當富P層之厚度D1增加時，Ni膜12中所消耗的Ni量增加。另一方面，如圖5B至5E所示，在第一焊料14中之Cu濃度高於1.7重量%之情況下，未發現Ni3SnP產生，且發現充分產生(Cu,Ni)6Sn5。發現富P層之厚度D1亦相對小，以及(Cu,Ni)6Sn5覆蓋Ni膜12且作為障壁層(barrier layer)。
圖6A至6E之顯微照片與圖5A至5E之顯微照片不同之處在於使用電鍍(electroplating)Ni層作為Ni膜12。圖6A至6E之第一焊料14中的Cu濃度分別為0.7重量%、1.7重量%、2.7重量%、3.0重量%、及3.2重量%。如圖6A所示，在第一焊料14中之Cu濃度為0.7重量%之情況下，發現(Cu,Ni)6Sn5之產生不足，以及廣泛產生(Ni,Cu)3Sn4。Ni膜12之厚度D2比起初始厚度D0係顯著縮減。即，已發現Ni膜12中消耗大量Ni。另一方面，如圖6B至6E所示，在第一焊料14中之Cu濃度高於1.7重量%之情況下，未發現(Ni,Cu)3Sn4產生，且發現充分產生(Cu,Ni)6Sn5。已發現Ni膜12之損失量(即，D0與D2之間的差)亦相對小，以及(Cu,Ni)6Sn5覆蓋Ni膜12且作為障壁層。
已發現上述實驗結果，在第一焊料14及第二焊料24中之Cu濃度為1.7重量%或更高的情況下，造成在Ni膜12、22各者上產生可作為障壁層之量的(Cu,Ni)6Sn5。然而，在Cu濃度為1.7重量%之情況下，Sn-Cu焊料之熔融溫度為250℃至260℃(參見圖22)。如上述，在Sn-Cu焊料中，當Cu濃度降低時，熔融溫度降低。結果，可降低第一熱處理步驟及第二熱處理步驟中之目標加熱溫度。此處，從圖5A至5E及圖6A至6E之上述實驗結果認為，在第一焊料14及第二焊料24之Cu濃度低於1.7重量%的情況下，可在Ni膜12、22各者上產生可作為障壁層之量的(Cu,Ni)6Sn5。以下，進一步研究第一焊料14及第二焊料24之Cu濃度係在0.7重量%至1.7重量%之範圍的情況。
圖9A至10E顯示由本案發明人所進行之實驗的結果。該實驗中，進行高溫耐久性測試(high-temperature durability test)，其中將具有不同第一焊料14及第二焊料24中之Cu濃度的樣本留置於200℃之高溫環境中。在該實驗中，Ni膜12、22為無電Ni-P鍍層，而第一構件10及第二構件20為Cu。在各樣本之評估中，參考Cu濃度為0.7重量%之參考實例測定「Ni損失量小之程度(Smallness of Amount of Ni Loss)」及「(Ni,Cu)3Sn4產生之不可能性(Unlikeliness of Production of (Ni,Cu)3Sn4)」。在圖7所示之表中，圓圈「○」表示評估項目比參考物(Ref)更令人滿意。圓圈數目愈多愈佳。此 處，項目「焊接」顯示在焊接之後立即觀察及測量個別樣本的結果，而項目「高溫耐久性(200℃)」顯示在高溫耐久性測試後觀察及測量個別樣本的結果。圖8為顯示在高溫耐久性測試中之停留時間(retention time)(各樣本留置於200℃之高溫環境(high-temperature atmosphere)中的時間)與所測量富P層之厚度D1之間的關係之圖。此處，根據圖8所示的富P層之厚度D1評估圖7中所示的「Ni損失量小之程度」。
從圖8、9A至9E、及10A至10E可看出，在Cu濃度為0.7重量%之樣本中，在進行高溫耐久性測試500小時之後，Ni膜12幾乎完全損失，且(Ni,Cu)3Sn4之產生明顯。另一方面，在Cu濃度為0.9重量%或更高的情況下，在進行高溫耐久性測試500小時之後仍留有Ni膜12，且(Ni,Cu)3Sn4之產生減少。根據上述結果判定，在第一焊料14及第二焊料24中之Cu濃度為0.9重量%或更高的情況下，即使在會曝露於200℃高溫之工業產品上亦可進行可行的(practicable)焊接。
此外，根據圖8所示之圖，當Cu濃度提高時，所產生之富P層的厚度縮減。此顯示：當Cu濃度提高時，於Ni膜12、22上產生之(Cu,Ni)6Sn5的厚度大，且由(Cu,Ni)6Sn5所獲得的障壁性質令人滿意。特別是，已發現在Cu濃度為1.6重量%之樣本中，即使在進行高溫耐久性測試500小時至1000小時之後亦可安定地防止富P層產生，且(Cu,Ni)6Sn5層展現更令人滿意的障壁性質。根據 上述結果判定第一焊料14及第二焊料24中之Cu濃度更佳為1.6重量%或更高。
本說明書中所揭示之焊接方法可應用於各種工業產品的製造。下文，茲說明應用本說明書中所揭示之焊接方法製造半導體裝置50的方法作為實例。最後，將參照圖11至15說明半導體裝置50之構造。半導體裝置50為用於電動車(electric vehicle)(包括油電混合車(hybrid car)及燃料電池車(fuel cell vehicle))中之馬達(motor)的電力供應路徑(power supply path)中的電力模組(power module)。
如圖11至13所示，半導體裝置50包括複數個半導體元件52、54、56、58以及密封該等半導體元件52、54、56、58之樹脂封裝60。該複數個半導體元件52、54、56、58為第一電晶體元件52、第二電晶體元件54、第一二極體元件56、及第二二極體元件58。半導體元件52、54、56、58各具有100A或更高之容許電流(allowable current)，且屬於功率半導體元件(power semiconductor element)。如圖13所示，第一電晶體元件52及第二電晶體元件54係彼此串聯(in series)電連接。第一二極體元件56係反向並聯(in reverse parallel)電連接至第一電晶體元件52，且第二二極體元件58係反向並聯電連接至第二電晶體元件54。
半導體裝置50另外包括複數個散熱件(heat sink)62、64、66、68及複數個間隔件72、74、76、78。 該複數個散熱件62、64、66、68及該複數個間隔件72、74、76、78各為導電構件，且係由例如金屬材料(諸如銅)形成。散熱件62、64、66、68各曝露於樹脂封裝60之底表面60a或頂表面60b，且使該複數個半導體元件52、54、56、58的熱散逸至外部。如圖14所示，第一電晶體元件52之底部電極(bottom electrode)52a及散熱件62彼此焊接(solder)，且在該底部電極52a與該散熱件62之間形成焊料接合層(solder joint layer)91。第一電晶體元件52之頂部電極(top electrode)52b及間隔件(spacer)72之底表面彼此焊接，且在該頂部電極52b與該間隔件72之底表面之間形成焊料接合層92。間隔件72之頂表面及散熱件66彼此焊接，且在該間隔件72之頂表面與該散熱件66之間形成焊料接合層93。
同樣的，第二電晶體元件54之底部電極54a及散熱件64彼此焊接，且在該底部電極54a與該散熱件64之間形成焊料接合層94。第二電晶體元件54之頂部電極54b及間隔件74之底表面彼此焊接，且在該頂部電極54b與該間隔件74之底表面之間形成焊料接合層95。間隔件74之頂表面及散熱件68彼此焊接，且在該間隔件74之頂表面與該散熱件68之間形成焊料接合層96。散熱件64之接頭(joint)65及散熱件66之接頭67彼此焊接，且在該接頭65與該接頭67之間形成焊料接合層97。雖然圖式中未顯示，但如第一電晶體元件52及第二電晶體元件54之情況，第一二極體元件56及第二二極體元件 58係藉由焊接固定至散熱件62、64、66、68及間隔件76、78。
如圖14及15所示，Ni膜101、102分別形成於散熱件62及第一電晶體元件52之接觸焊料接合層91的表面上。Ni膜103、104分別形成於第一電晶體元件52及間隔件72之接觸焊料接合層92的表面上。雖然圖式中未顯示，但Ni膜亦分別形成於兩構件之接觸焊料接合層93至97各者的表面上。
如圖11及12所示，半導體裝置50另外包括正電極端子(positive electrode terminal)82、負電極端子(negative electrode terminal)84、輸出端子(output terminal)86、及複數個控制端子(control terminal)88。正電極端子82與散熱件62一體形成。負電極端子84係焊接至散熱件68之接頭69。輸出端子86與散熱件64一體形成(formed integrally)。此處，散熱件62、64、66、68分別電連接至複數個半導體元件52、54、56、58，以形成導電路徑(conductive path)。各控制端子88經由銲線(bonding wire)89連接至第一電晶體元件52或第二電晶體元件54之閘極墊(gate pad)或另一電極墊(electrode pad)。
下文，茲參照圖16至21說明製造上述半導體裝置50之方法。首先，如圖16所示，第一熱處理步驟及第二熱處理步驟係在待彼此焊接的兩個構件上進行。結果，焊料係焊接(solder)至各構件。例如，關於待彼此焊接之散熱件62及第一電晶體元件52，在散熱件62上進 行第一熱處理步驟，且在第一電晶體元件52上進行第二熱處理步驟。在第一熱處理步驟中，將為Sn-Cu焊料之第一焊料91a熔接於形成在散熱件62上的Ni膜101，以在該Ni膜101上產生(Cu,Ni)6Sn5。另一方面，在第二熱處理步驟中，將為Sn-Cu焊料之第二焊料91b熔接於形成在第一電晶體元件52上的Ni膜102上，以在該Ni膜102上產生(Cu,Ni)6Sn5。此處，如上述，第一焊料91a及第二焊料91b含有0.9重量%或更高之Cu，較佳為1.6重量%或更高之Cu。同樣的，關於其他焊接位置，在各構件上進行第一熱處理步驟或第二熱處理步驟，以使第一焊料92a至97a或第二焊料92b至97b焊接至各構件(此亦適用於第一二極體元件56及圖16中未顯示的其他構件)。
其次，如圖17所示，第一電晶體元件52及間隔件72係配置在散熱件62上彼此重疊，而第二電晶體元件54及間隔件74係配置在散熱件64上彼此重疊。此時，焊接至散熱件62之第一焊料91a接觸或面對焊接至第一電晶體元件52之底表面的第二焊料91b，而焊接至第一電晶體元件52之頂表面的第一焊料92a接觸或面對焊接至間隔件72之底表面的第二焊料92b。關於第二電晶體元件54側，相似地，第一焊料94a、95a分別接觸或面對對應之第二焊料94b、95b。雖然圖式中未顯示，但第一二極體元件56及間隔件76另配置在散熱件62上而彼此重疊，且第二二極體元件58及間隔件78另配置在散熱件64上而彼此重疊。散熱件62及散熱件64可製備作 為與複數個控制端子88等一體形成的引線框。
其次，如圖18所示，藉由進行第三熱處理步驟，使焊接至個別構件之第一焊料91a、92a、94a、95a及焊接至個別構件之第二焊料91b、92b、94b、95b熔融，以分別使第一及第二焊料成為一體。結果，第一電晶體元件52經由焊料接合層91接合至散熱件62，且係經由焊料接合層92接合至間隔件72。第二電晶體元件54經由焊料接合層94接合至散熱件64，且係經由焊料接合層95接合至間隔件74。雖然圖式中未顯示，但相似地，第一二極體元件56係經由焊料接合層接合至散熱件62及間隔件76，而第二二極體元件58係經由焊料接合層接合至散熱件64及間隔件78。其次，在控制端子88上進行銲線連接(wire bonding)。
其次，如圖19所示，散熱件66、68係於已經歷上述第三熱處理步驟之半成品中組合。此時，焊接至間隔件72之頂表面的第一焊料93a接觸或面對焊接至散熱件66之底表面的第二焊料93b，而焊接至間隔件74之頂表面的第一焊料96a接觸或面對焊接至散熱件68之底表面的第二焊料96b。焊接至散熱件64之接頭65的第一焊料97a接觸或面對焊接至散熱件66之接頭67的第二焊料97b。
其次，如圖20所示，再次藉由進行第三熱處理步驟，使焊接至個別構件之第一焊料93a、96a、97a及焊接至個別構件之第二焊料93b、96b、97b熔融，以分別 使第一及第二焊料成為一體。結果，散熱件66經由焊料接合層93接合至間隔件72，而散熱件68經由焊料接合層96接合至間隔件74。散熱件66之接頭67經由焊料接合層97接合至散熱件64之接頭65。雖然圖式中未顯示，但散熱件66焊接至在第一二極體元件56上之間隔件76，而散熱件68焊接至在第二二極體元件58上之間隔件78。其次，如圖21所示，樹脂封裝(resin package)60係藉由模製成形(mold forming)形成，且進行引線框裁切步驟及其他必要步驟。結果，完成半導體裝置50。
製造半導體裝置50之方法僅為例示，且本說明書中所揭示之焊接方法可應用於製造具有各種不同構造的半導體裝置之方法。然而，半導體裝置50包括功率半導體元件52、54、56、58，且藉由對其施加高電流，焊接位置的溫度可達200℃。關於此點，根據上述製造方法，在各構件之Ni膜(例如，Ni膜101、102、103)上產生充分量的(Cu,Ni)6Sn5。結果，即使在200℃之高溫下，可形成可防止Ni膜轉化成金屬間化合物的障壁層。因此，上述製造方法可適當地應用至製造包括功率半導體元件52、54、56、58之半導體裝置50的方法。在製造半導體裝置50之方法中，本說明書中所揭示之焊接方法係應用於複數個焊接位置。本說明書中所揭示之焊接方法可僅應用於該複數個焊接位置中的一些。
前文已詳細說明一些具體實例。然而，該等實例僅為例示且不侷限申請專利範圍。申請專利範圍中所 描述之技術包括上述具體實例的各種修飾及替換。以下，將以從本說明書之揭露內容所得之技術特徵為例。以下所述之技術特徵相互獨立，且可單獨或以各種組合在技術上使用。
本說明書揭示製造包括第一構件及接合至該第一構件之第二構件的半導體裝置之方法。該製造方法包含：藉由在第一構件之Ni膜上熔融含有0.9重量%或更高之Cu的第一Sn-Cu焊料而在形成於第一構件上之Ni膜上產生(Cu,Ni)6Sn5的第一熱處理步驟；藉由在第二構件之Ni膜上熔融含有0.9重量%或更高之Cu的第二Sn-Cu焊料而在形成於第二構件上之Ni膜上產生(Cu,Ni)6Sn5的第二熱處理步驟；以及藉由熔融已經歷第一熱處理步驟之第一Sn-Cu焊料及已經歷第二熱處理步驟之第二Sn-Cu焊料以使該第一及第二Sn-Cu焊料成為一體而使該第一構件及該第二構件彼此接合的第三熱處理步驟。根據該製造方法，即使在第一及第二Sn-Cu焊料中之Cu濃度相對低的情況下，可在第一構件及第二構件之各Ni膜上產生預定量的(Cu,Ni)6Sn5。
在上述製造方法中，第一Sn-Cu焊料及第二Sn-Cu焊料於第三熱處理步驟中熔融的時間可比第一Sn-Cu焊料於第一熱處理步驟中熔融的時間及第二Sn-Cu焊料於第二熱處理步驟熔融的時間短。第三熱處理步驟不是僅為了金屬間化合物之產生而進行。第一Sn-Cu焊料及第二Sn-Cu焊料可藉由使彼等在第三熱處理步驟中簡單地熔 融而成為一體。因此，焊料於第三熱處理步驟中熔融的時間可比焊料於第一熱處理步驟中熔融的時間及焊料於第二熱處理步驟中熔融的時間短。結果，可減少製造半導體裝置所需時間。
在上述製造方法中，較佳係第一Sn-Cu焊料或第二Sn-Cu焊料中至少一者含有1.6重量%或更高之Cu。結果，可在第一構件或第二構件中至少一者的Ni膜上產生可展現更令人滿意之障壁性質的量之(Cu,Ni)6Sn5。
在上述製造方法中，較佳係第一構件或第二構件中至少一者為功率半導體元件。在包括功率半導體元件之半導體裝置中，藉由對其施加高電流，焊接位置的溫度可達例如200℃。關於此點，根據上述製造方法，在各構件之Ni膜上產生充分量的(Cu,Ni)6Sn5。結果，即使在200℃之高溫下，可形成可長時間防止Ni膜轉化成金屬間化合物的障壁層。因此，包括功率半導體元件之半導體裝置的耐熱性可獲得顯著改善。

Claims (4)

  1. 一種製造包括第一構件(10)及接合至該第一構件之第二構件(20)的半導體裝置(50)的方法，該方法包含：a)藉由在該第一構件之Ni膜上熔融含有0.9重量%或更高之Cu的第一Sn-Cu焊料(14)而在形成於該第一構件上之Ni膜(12)上產生(Cu,Ni)6Sn5；b)藉由在該第二構件之Ni膜上熔融含有0.9重量%或更高之Cu的第二Sn-Cu焊料(24)而在形成於該第二構件上之Ni膜(22)上產生(Cu,Ni)6Sn5；以及c)藉由熔融已經歷步驟a)之第一Sn-Cu焊料及已經歷步驟b)之第二Sn-Cu焊料以使該第一Sn-Cu焊料及該第二Sn-Cu焊料成為一體而彼此接合該第一構件及該第二構件。
  2. 如申請專利範圍第1項之製造半導體裝置的方法，其中該第一Sn-Cu焊料及該第二Sn-Cu焊料於步驟c)中之熔融時間比該第一Sn-Cu焊料於步驟a)中之熔融時間以及該第二Sn-Cu焊料於步驟b)中之熔融時間短。
  3. 如申請專利範圍第1或2項之製造半導體裝置的方法，其中該第一Sn-Cu焊料或該第二Sn-Cu焊料之至少一者含有1.6重量%或更高之Cu。
  4. 如申請專利範圍第1或2項之製造半導體裝置的方法，其中該第一構件或該第二構件之至少一者為功率半導體元件。
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