TWI631684B - 中介基板及其製法 - Google Patents

中介基板及其製法 Download PDF

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TWI631684B
TWI631684B TW106130289A TW106130289A TWI631684B TW I631684 B TWI631684 B TW I631684B TW 106130289 A TW106130289 A TW 106130289A TW 106130289 A TW106130289 A TW 106130289A TW I631684 B TWI631684 B TW I631684B
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layer
insulating
insulating layer
interposer substrate
circuit
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TW106130289A
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TW201913944A (zh
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許詩濱
許哲瑋
張景捷
曾昭崇
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恆勁科技股份有限公司
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Priority to US15/817,450 priority patent/US10475765B2/en
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Abstract

一種中介基板及其製法，係於一基板本體上形成包含有含磷化合物之絕緣保護層，以當該中介基板之厚度極薄時，包含有含磷化合物之絕緣保護層能提供該中介基板所需之韌性，因而當該中介基板發生應力收縮或結構不對稱時，不會產生翹曲狀況。

Description

中介基板及其製法
本發明係有關一種中介基板，尤指一種封裝製程用之中介基板及其製法。
早期封裝堆疊結構係將記憶體封裝件(俗稱記憶體IC)藉由複數焊球堆疊於邏輯封裝件(俗稱邏輯IC)上，且隨著電子產品更趨於輕薄短小及功能不斷提昇之需求，記憶體封裝件之佈線密度愈來愈高，以奈米尺寸作單位，因而其接點之間的間距更小；然，邏輯封裝件的間距係以微米尺寸作單位，而無法有效縮小至對應記憶體封裝件的間距，導致雖有高線路密度之記憶體封裝件，卻未有可配合之邏輯封裝件，以致於無法有效生產電子產品。
為了克服上述問題，遂於記憶體封裝件與邏輯封裝件之間增設一中介基板(interposer substrate)，如，該中介基板之底端電性結合間距較大之具邏輯晶片之邏輯封裝件，而該中介基板之上端電性結合間距較小之具記憶體晶片之記憶體封裝件。
第1圖係為習知中介基板1之製法的剖視示意圖。如 第1圖所示，提供一覆蓋有一絕緣保護層11之基板本體10，該基板本體10係包含至少一介電層10b及設於該介電層10b上之線路層(圖中僅顯示最外側表面上之線路層10a)，該線路層10a具有複數導電線101及複數連結該導電線101之電性接觸墊100，且該絕緣保護層11係作為綠漆防焊層並具有複數開孔110，以令該些電性接觸墊100之部分頂表面對應外露於該些開孔110。
然而，該絕緣保護層11之材質係為綠漆，一般會於其中添加剛性填充物(filler)材料，如氧化鋁、碳酸鋇類等陶瓷粉末，以提升結構強度，故當該中介基板1之厚度H薄化至一定程度時(如180微米以下)，該中介基板1之韌性較差，因而當該中介基板1發生應力收縮或結構不對稱時，容易產生翹曲狀況，導致較薄之中介基板1(厚度H小於180微米)難以符合應力變化之需求。
再者，雖有以韌性佳之聚醯亞胺(Polyimide，簡稱PI)薄膜或其它柔軟材質作為該絕緣保護層11之材質，以符合應力變化之需求，但聚醯亞胺(PI)因無黏貼性與剛性而需藉由膠帶11a將其黏接至該基板本體10之介電層10b上，因而會使該中介基板1之厚度H超過180微米，致使該中介基板1難以符合薄化之需求。
又，亦有採用塗佈液態防焊材再固化之方式將該絕緣保護層11形成於該基板本體10之介電層10b上，但製程繁瑣，且容易發生塗佈不均勻之現象，致使該中介基板1之可靠度不佳。
因此，如何克服習知技術中之種種問題，實已成目前亟欲解決的課題。
鑑於上述習知技術之缺失，本發明提供一種中介基板，係包括：基板本體，係包含至少一絕緣層及結合該絕緣層之線路部，該線路部係包含設於該絕緣層上之線路層、及位於該絕緣層中且連接該線路層之複數導電柱；以及包含有含磷化合物之絕緣保護層，係形成於該基板本體上。
本發明復提供一種中介基板之製法，係包括：提供一基板本體，其包含至少一絕緣層及結合該絕緣層之線路部，該線路部係包含設於該絕緣層上之線路層、及位於該絕緣層中且連接該線路層之複數導電柱；以及形成絕緣保護層於該基板本體上，且該絕緣保護層係包含有含磷化合物。
前述之中介基板及其製法中，形成該絕緣層之材質係為鑄模化合物或底層塗料。
前述之中介基板及其製法中，該絕緣保護層之熱膨脹係數大於該絕緣層之熱膨脹係數。
前述之中介基板及其製法中，該含磷化合物中含有10000至30000ppm的磷。
前述之中介基板及其製法中，該基板本體與該絕緣保護層之兩者厚度總和係小於或等於180微米。
由上可知，本發明中介基板及其製法，主要藉由該絕 緣保護層包含有含磷化合物，以提升其韌性，使該絕緣保護層可採用具有黏性且結構強度佳的材質作為薄膜主體，而無需使用膠帶，故當該中介基板之厚度極薄時，包含有含磷化合物之絕緣保護層能提供該中介基板所需之韌性，因而當該中介基板發生應力收縮或結構不對稱時，不會產生翹曲狀況。因此，相較於習知技術，本發明之中介基板能同時符合薄化之需求與應力變化之需求。
1,2,3‧‧‧中介基板
10,2a,3a‧‧‧基板本體
10a‧‧‧線路層
10b‧‧‧介電層
100,210‧‧‧電性接觸墊
101,211,241‧‧‧導電線
11,26‧‧‧絕緣保護層
110,260,261‧‧‧開孔
20‧‧‧承載板
20a‧‧‧金屬材
21‧‧‧第一線路層
21a‧‧‧上表面
22,32‧‧‧導電柱
22a‧‧‧端面
23,33‧‧‧絕緣層
23a‧‧‧第一表面
23b‧‧‧第二表面
24,34‧‧‧第二線路層
24a‧‧‧頂表面
24c‧‧‧側面
240‧‧‧植球墊
25‧‧‧表面處理層
26a‧‧‧表面
27‧‧‧電子元件
270‧‧‧導電凸塊
28‧‧‧封裝層
29‧‧‧導電元件
30‧‧‧阻層
300‧‧‧開口區
31‧‧‧導電層
330‧‧‧盲孔
11a‧‧‧膠帶
H,h,t‧‧‧厚度
第1圖係為習知封裝基板之剖視示意圖；第2A至2F圖係為本發明之中介基板之製法之第一實施例的剖視示意圖；第2F-1圖係為係為第2F圖之另一實施例；第2G圖係為第2F圖之後續製程的剖視示意圖；以及第3A至3C圖係為本發明之中介基板之製法之第二實施例的剖視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功 效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”、“第一”、“第二”及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。
第2A至2F圖係為本發明之無核心層式(coreless)中介基板2之製法之第一實施例的剖視示意圖。於本實施例中，該中介基板2係為晶片尺寸覆晶封裝(flip-chip chip scale package，簡稱FCCSP)用之載板。
如第2A圖所示，提供一承載板20。於本實施例中，該承載板20係為基材，例如銅箔基板，但無特別限制，本實施例係以銅箔基板作說明，其兩側具有含銅之金屬材20a。
如第2B圖所示，藉由圖案化製程，以形成一第一線路層21於該承載板20上。
於本實施例中，該第一線路層21係包含複數電性接觸墊210與複數導電線211。
如第2C圖所示，藉由圖案化製程，以電鍍形成複數導電柱22於該第一線路層21之電性接觸墊210上。
於本實施例中，該些導電柱22係接觸且電性連接該第一線路層21之電性接觸墊210。
如第2D圖所示，形成一絕緣層23於該承載板20上，該絕緣層23係具有相對之第一表面23a與第二表面23b， 且該絕緣層23藉其第一表面23a結合至該承載板20上，而該導電柱22係外露於該絕緣層23之第二表面23b，其中，該導電柱22之端面22a係齊平該絕緣層23之第二表面23b。
於本實施例中，該絕緣層23係以鑄模方式、塗佈方式或壓合方式形成於該承載板20上，且形成該絕緣層23之材質係為介電材料，該介電材料可為環氧樹脂(Epoxy)，且該環氧樹脂更包含鑄模化合物(Molding Compound)或底層塗料(Primer)，如環氧模壓樹脂(Epoxy Molding Compound，簡稱EMC)，其中，該環氧模壓樹脂係含有充填物(filler)，且該充填物含量為70至90wt%。
如第2E圖所示，形成一第二線路層24於該絕緣層23之第二表面23b與該些導電柱22上，使該第一線路層21、導電柱22與該第二線路層24作為線路部，以令該絕緣層23與該線路部構成基板本體2a。接著，形成一絕緣保護層26於該基板本體之絕緣層23之第二表面23b上，且外露該基板本體2a之部分第二線路層24。
於本實施例中，該第二線路層24係包含複數供結合焊球(圖略)之植球墊240與複數連接該植球墊240之導電線241，且該植球墊240外露於該絕緣保護層26，其中，該第二線路層24之植球墊240之頂表面24a係低於該絕緣保護層26之表面26a，例如，該絕緣保護層26係形成有複數對應該植球墊240之開孔260，以令各該植球墊240對應外露於該開孔260中，但本實施例不以此為限。於其 它實施例中，如第2F-1圖所示，該第二線路層24之植球墊240之頂表面24a與側面24c係全部外露於該絕緣保護層26之開孔261中。
再者，該絕緣保護層26係為一覆蓋膜(cover layer)，其厚度t約25微米(μm)，且材質係為聚醯亞胺(Polyimide，簡稱PI)或環氧樹脂，並於該聚醯亞胺(或該環氧樹脂)中添加氫氧化鋁(Al(OH)3)及含磷化合物，以形成韌性佳之絕緣保護層26或軟性絕緣保護層26，且該含磷化合物中含有10000至30000ppm的磷。
如第2F圖所示，移除全部該承載板20，使該第一線路層21之上表面21a外露於該絕緣層23之第一表面23a，且該第一線路層21之上表面21a係低於該絕緣層23之第一表面23a。
於本實施例中，係以蝕刻方式移除該金屬材20a，故會略蝕刻該第一線路層21之上表面21a，使該第一線路層21之上表面21a係微凹於該絕緣層23之第一表面23a。
再者，可依需求形成表面處理層25於該第一線路層21之上表面21a(或該第二線路層24之外露表面)上，且該表面處理層25之表面可高於、低於或齊平該絕緣層23之第一表面23a(或該絕緣保護層26之表面)。例如，形成該表面處理層25之材質可為銅面保護劑、OSP、電鍍鎳鈀金、化鎳鈀金、電鍍鎳金、鍍錫、鍍銀或上述組合等之其中一者。
本發明之製法係藉由該絕緣保護層26包含有氫氧化 鋁及含磷化合物，以提升其韌性，使該絕緣保護層26可採用具有黏性且結構強度佳的材質作為薄膜主體，而無需使用膠帶，故當該中介基板2之厚度h極薄(例如，厚度h小於180微米)時，包含有含磷化合物之該絕緣保護層26能提供該中介基板2所需之韌性，因而當該中介基板2發生應力收縮或結構不對稱時，不會產生翹曲狀況。因此，相較於習知技術，本發明之中介基板2能同時符合薄化之需求與應力變化之需求。
再者，由於包含有含磷化合物之該絕緣保護層26之韌性佳，其熱膨脹係數(Coefficient of thermal expansion，簡稱CTE)遠大於該絕緣層23之CTE，故藉由調整該絕緣保護層26之CTE能改善該中介基板2之翹曲程度。
又，於後續製程中，如第2G圖所示，可於該基板本體2a之第一線路層21之電性接觸墊210上設置電子元件27，再以封裝層28包覆該電子元件27。或者，於該基板本體2a之第二線路層24上接置如焊球之導電元件29，俾供外接一如電路板、封裝件、晶片或封裝基板之電子裝置。
所述之電子元件27係為主動元件、被動元件或其二者組合，其中，該主動元件係例如半導體晶片，而該被動元件係例如電阻、電容及電感。例如，該電子元件27係藉由複數如焊錫材料之導電凸塊270以覆晶方式設於該第一線路層21上並電性連接該第一線路層21；或者，該電子元件27可藉由複數銲線(圖略)以打線方式電性連接該第一線路層21；亦或，該電子元件27可直接接觸該第一線路 層21。然而，有關該電子元件27電性連接該第一線路層21之方式不限於上述。
所述之封裝層28可為壓合製程用之薄膜、模壓製程用之封裝膠體或印刷製程用之膠材等，且形成該封裝層28之材質係為聚醯亞胺(PI)、乾膜(dry film)、環氧樹脂(epoxy)或封裝材。然而，有關該封裝層28之材質或形成方式並不限於上述。
第3A至3C圖係為本發明之中介基板3之製法之第二實施例的剖視示意圖。本實施例與第一實施例之差異在於該基板本體2a之製程，其它製程大致相同，故以下僅說明相異處，而不再贅述相同處，特此述明。
如第3A圖所示，係於第2B圖之製程後，形成一絕緣層33於該承載板(圖略)與該第一線路層21上，且該絕緣層33形成有複數外露部分該第一線路層21之盲孔330。
於本實施例中，形成該絕緣層33之材質係為如聚對二唑苯(Polybenzoxazole，簡稱PBO)、聚醯亞胺(Polyimide，簡稱PI)、預浸材(Prepreg，簡稱PP)等之介電材。
如第3B圖所示，於該絕緣層33上與該盲孔330中形成一導電層31，再於該導電層31上形成一阻層30，且該阻層30形成有複數開口區300，以令該盲孔330中之導電層31及該盲孔330周圍絕緣層33上之部分導電層31外露於該些開口區300。接著，於該開口區300中藉由該導電層31電鍍形成第二線路層34與導電柱32，使該第二線路層34與該導電柱32為一體成形，且該導電柱32係形成於 該盲孔330中以電性連接該第一線路層31。
如第3C圖所示，移除該阻層30及其下之導電層31，以形成基板本體3a，再於該基板本體3a之絕緣層33與第二線路層34上形成該絕緣保護層26，且該絕緣保護層26具有複數開孔260，以令部分該第二線路層34對應外露於該些開孔260。
應可理解地，於其它實施例中，該基板本體2a,3a之線路部係可包含更多層之線路層，並不限於上述實施例中之兩層線路層(即該第一線路層21與第二線路層24,34)。
本發明復提供一種中介基板2,3，係包括：一基板本體2a,3a、以及形成於該基板本體2a,3a上之絕緣保護層26。
所述之基板本體2a,3a係包含至少一絕緣層23,33及結合該絕緣層23,33之線路部。
所述之絕緣保護層26係包含有含磷化合物，且該含磷化合物中含有10000至30000ppm的磷。
於一實施例中，形成該絕緣層23,33之材質係為介電材，如鑄模化合物或底層塗料。
於一實施例中，該線路部係包含設於該絕緣層23,33上之第一線路層21與第二線路層24,34。進一步，該線路部復包含位於該絕緣層23,33中且連接該第一線路層21與第二線路層24,34之導電柱22,32。
於一實施例中，該絕緣保護層26之熱膨脹係數大於該絕緣層23,33之熱膨脹係數。
於一實施例中，該中介基板2,3之厚度h(或該基板本 體2a,3a與該絕緣保護層26之兩者厚度總和)係小於或等於180微米。
綜上所述，本發明中介基板及其製法，係藉由該絕緣保護層包含有含磷化合物，以當該中介基板之厚度極薄時，包含有含磷化合物之絕緣保護層能提供該中介基板所需之韌性，故本發明之中介基板能同時符合薄化之需求與應力變化之需求。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。

Claims (10)

  1. 一種中介基板，係包括：基板本體，係包含至少一絕緣層及結合該絕緣層之線路部，該線路部係包含設於該絕緣層上之線路層、及位於該絕緣層中且連接該線路層之複數導電柱；以及包含有含磷化合物之絕緣保護層，係形成於該基板本體上。
  2. 如申請專利範圍第1項所述之中介基板，其中，形成該絕緣層之材質係為鑄模化合物或底層塗料。
  3. 如申請專利範圍第1項所述之中介基板，其中，該絕緣保護層之熱膨脹係數大於該絕緣層之熱膨脹係數。
  4. 如申請專利範圍第1項所述之中介基板，其中，該含磷化合物中含有10000至30000ppm的磷。
  5. 如申請專利範圍第1項所述之中介基板，其中，該基板本體與該絕緣保護層之兩者厚度總和係小於或等於180微米。
  6. 一種中介基板之製法，係包括：提供一基板本體，其包含至少一絕緣層及結合該絕緣層之線路部，該線路部係包含設於該絕緣層上之線路層、及位於該絕緣層中且連接該線路層之複數導電柱；以及形成絕緣保護層於該基板本體上，且該絕緣保護層係包含有含磷化合物。
  7. 如申請專利範圍第6項所述之中介基板之製法，其中，形成該絕緣層之材質係為鑄模化合物或底層塗料。
  8. 如申請專利範圍第6項所述之中介基板之製法，其中，該絕緣保護層之熱膨脹係數大於該絕緣層之熱膨脹係數。
  9. 如申請專利範圍第6項所述之中介基板之製法，其中，該含磷化合物中含有10000至30000ppm的磷。
  10. 如申請專利範圍第6項所述之中介基板之製法，其中，該基板本體與該絕緣保護層之兩者厚度總和係小於或等於180微米。
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