TWI624879B - Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component - Google Patents

Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component Download PDF

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Publication number
TWI624879B
TWI624879B TW104144060A TW104144060A TWI624879B TW I624879 B TWI624879 B TW I624879B TW 104144060 A TW104144060 A TW 104144060A TW 104144060 A TW104144060 A TW 104144060A TW I624879 B TWI624879 B TW I624879B
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TW
Taiwan
Prior art keywords
layer
electronic component
aln
initial
roughness
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TW104144060A
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English (en)
Chinese (zh)
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TW201635394A (zh
Inventor
萩本和德
篠宮勝
土屋慶太郎
後藤博一
佐藤憲
鹿內洋志
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信越半導體股份有限公司
三墾電氣股份有限公司
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Publication of TW201635394A publication Critical patent/TW201635394A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3256—Microstructure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
TW104144060A 2015-01-08 2015-12-28 Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component TWI624879B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015002047A JP6261523B2 (ja) 2015-01-08 2015-01-08 電子デバイス用エピタキシャル基板の製造方法、並びに電子デバイスの製造方法
JP2015-002047 2015-01-08

Publications (2)

Publication Number Publication Date
TW201635394A TW201635394A (zh) 2016-10-01
TWI624879B true TWI624879B (zh) 2018-05-21

Family

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Family Applications (1)

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TW104144060A TWI624879B (zh) 2015-01-08 2015-12-28 Epitaxial substrate for electronic component, electronic component, method for producing epitaxial substrate for electronic component, and method for manufacturing electronic component

Country Status (6)

Country Link
US (1) US10115589B2 (OSRAM)
JP (1) JP6261523B2 (OSRAM)
KR (1) KR20170101932A (OSRAM)
CN (1) CN107112242B (OSRAM)
TW (1) TWI624879B (OSRAM)
WO (1) WO2016110906A1 (OSRAM)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6239017B2 (ja) * 2015-03-31 2017-11-29 クアーズテック株式会社 窒化物半導体基板
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same
US11316041B2 (en) 2017-11-20 2022-04-26 Rohm Co., Ltd. Semiconductor device
JP2019125737A (ja) * 2018-01-18 2019-07-25 株式会社サイオクス 窒化物半導体エピタキシャル基板
US11515408B2 (en) 2020-03-02 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Rough buffer layer for group III-V devices on silicon
US20220122838A1 (en) * 2020-10-21 2022-04-21 University Of South Carolina Approaches for Fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices
US20230031662A1 (en) * 2021-04-02 2023-02-02 Innoscience (Suzhou) Technology Co., Ltd. Iii nitride semiconductor wafers

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WO2011016304A1 (ja) * 2009-08-07 2011-02-10 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
JP2011114267A (ja) * 2009-11-30 2011-06-09 Sanken Electric Co Ltd 半導体装置
JP2013042032A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 化合物半導体装置及びその製造方法

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JP2008078613A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd 窒化物半導体の製造方法及び窒化物半導体素子
JP4677499B2 (ja) * 2008-12-15 2011-04-27 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
JP2011023677A (ja) * 2009-07-21 2011-02-03 Hitachi Cable Ltd 化合物半導体エピタキシャルウェハおよびその製造方法
JP5378128B2 (ja) 2009-09-18 2013-12-25 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびｉｉｉ族窒化物電子デバイス用エピタキシャル基板
US9006865B2 (en) * 2010-06-25 2015-04-14 Dowa Electronics Materials Co., Ltd. Epitaxial growth substrate, semiconductor device, and epitaxial growth method
KR101820327B1 (ko) * 2010-08-07 2018-01-19 티피케이 홀딩 컴퍼니 리미티드 표면 매립 첨가제를 가진 디바이스 콤포넌트 및 이와 관련된 제조 방법
JP6035721B2 (ja) * 2011-09-27 2016-11-30 住友電気工業株式会社 半導体装置の製造方法
JP6130995B2 (ja) * 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
JP6152700B2 (ja) * 2013-05-23 2017-06-28 住友電気工業株式会社 半導体装置の製造方法
TWI523222B (zh) * 2013-10-14 2016-02-21 國立交通大學 含氮化鎵之半導體結構
KR102145205B1 (ko) * 2014-04-25 2020-08-19 삼성전자주식회사 반도체 소자 제조방법 및 증착 장치의 유지보수방법
US9337023B1 (en) * 2014-12-15 2016-05-10 Texas Instruments Incorporated Buffer stack for group IIIA-N devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011016304A1 (ja) * 2009-08-07 2011-02-10 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
JP2011114267A (ja) * 2009-11-30 2011-06-09 Sanken Electric Co Ltd 半導体装置
JP2013042032A (ja) * 2011-08-18 2013-02-28 Fujitsu Ltd 化合物半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP6261523B2 (ja) 2018-01-17
WO2016110906A1 (ja) 2016-07-14
CN107112242A (zh) 2017-08-29
JP2016127223A (ja) 2016-07-11
US20170352537A1 (en) 2017-12-07
CN107112242B (zh) 2020-11-13
US10115589B2 (en) 2018-10-30
KR20170101932A (ko) 2017-09-06
TW201635394A (zh) 2016-10-01

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