TWI621173B - 基板處理裝置及載置台 - Google Patents

基板處理裝置及載置台 Download PDF

Info

Publication number
TWI621173B
TWI621173B TW103101998A TW103101998A TWI621173B TW I621173 B TWI621173 B TW I621173B TW 103101998 A TW103101998 A TW 103101998A TW 103101998 A TW103101998 A TW 103101998A TW I621173 B TWI621173 B TW I621173B
Authority
TW
Taiwan
Prior art keywords
substrate
mounting table
conductive layer
volume
ceramic substrate
Prior art date
Application number
TW103101998A
Other languages
English (en)
Chinese (zh)
Other versions
TW201438101A (zh
Inventor
多賀敏
小林義之
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=51612274&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI621173(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW201438101A publication Critical patent/TW201438101A/zh
Application granted granted Critical
Publication of TWI621173B publication Critical patent/TWI621173B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW103101998A 2013-01-24 2014-01-20 基板處理裝置及載置台 TWI621173B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013010855 2013-01-24
JP2013-010855 2013-01-24
JP2013-048172 2013-03-11
JP2013048172A JP6100564B2 (ja) 2013-01-24 2013-03-11 基板処理装置及び載置台

Publications (2)

Publication Number Publication Date
TW201438101A TW201438101A (zh) 2014-10-01
TWI621173B true TWI621173B (zh) 2018-04-11

Family

ID=51612274

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103101998A TWI621173B (zh) 2013-01-24 2014-01-20 基板處理裝置及載置台

Country Status (3)

Country Link
JP (1) JP6100564B2 (ja)
KR (1) KR102188409B1 (ja)
TW (1) TWI621173B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6070631B2 (ja) 2014-05-23 2017-02-01 トヨタ自動車株式会社 内燃機関のピストン
JP6187545B2 (ja) * 2015-03-17 2017-08-30 トヨタ自動車株式会社 内燃機関のピストン、該ピストンを備える内燃機関および該ピストンの製造方法
US10208703B2 (en) 2015-03-17 2019-02-19 Toyota Jidosha Kabushiki Kaisha Piston for internal combustion engine, internal combustion engine including this piston, and manufacturing method of this piston
US9608550B2 (en) * 2015-05-29 2017-03-28 Lam Research Corporation Lightup prevention using multi-layer ceramic fabrication techniques
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR102309790B1 (ko) * 2015-08-11 2021-10-12 삼성디스플레이 주식회사 기판 처리 시스템
KR101999838B1 (ko) 2015-08-11 2019-07-15 삼성디스플레이 주식회사 기판 처리 시스템
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
KR20210117338A (ko) 2019-02-12 2021-09-28 램 리써치 코포레이션 세라믹 모놀리식 바디를 갖는 정전 척
KR102108263B1 (ko) * 2019-09-20 2020-05-11 삼성디스플레이 주식회사 기판 처리 시스템
KR102442087B1 (ko) * 2019-09-20 2022-09-14 삼성디스플레이 주식회사 기판 처리 시스템
TWI798922B (zh) * 2021-11-08 2023-04-11 財團法人工業技術研究院 半導體結構及其製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200834804A (en) * 2006-12-15 2008-08-16 Tokyo Electron Ltd Substrate mounting table and method for manufacturing the same, substrate processing apparatus, and fluid supply mechanism
US20080314523A1 (en) * 2007-06-25 2008-12-25 Tokyo Electron Limited Gas supply mechanism and substrate processing apparatus
TW200924017A (en) * 2007-10-31 2009-06-01 Lam Res Corp Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
US20090277874A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
TW200947603A (en) * 2008-02-08 2009-11-16 Tokyo Electron Ltd Substrate mounting stand for plasma processing device, plasma processing device, and insulating coating deposition method

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3167820B2 (ja) * 1993-01-29 2001-05-21 東京エレクトロン株式会社 異常放電検出方法
JP2817585B2 (ja) * 1993-09-10 1998-10-30 住友金属工業株式会社 試料の離脱方法
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
WO1997025741A1 (de) * 1996-01-04 1997-07-17 Daimler-Benz Aktiengesellschaft Kühlkörper mit zapfen
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
JPH10107132A (ja) * 1996-09-30 1998-04-24 Kyocera Corp 静電チャック
TW439094B (en) * 1998-02-16 2001-06-07 Komatsu Co Ltd Apparatus for controlling temperature of substrate
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
JP3792999B2 (ja) * 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
WO2002065532A1 (fr) * 2001-02-15 2002-08-22 Tokyo Electron Limited Procede de traitement de piece et dispositif de traitement
JP4325301B2 (ja) 2003-01-31 2009-09-02 東京エレクトロン株式会社 載置台、処理装置及び処理方法
WO2004095531A2 (en) 2003-03-28 2004-11-04 Tokyo Electron Ltd Method and system for temperature control of a substrate
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP2006165093A (ja) * 2004-12-03 2006-06-22 Tokyo Electron Ltd プラズマ処理装置
JP2006253312A (ja) * 2005-03-09 2006-09-21 Tokyo Electron Ltd プラズマ処理装置
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
KR100854500B1 (ko) * 2007-02-12 2008-08-26 삼성전자주식회사 척 어셈블리 및 이를 구비한 고밀도 플라즈마 설비
JP2009064952A (ja) * 2007-09-06 2009-03-26 Canon Anelva Corp 表面処理装置
JP5357639B2 (ja) * 2009-06-24 2013-12-04 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200834804A (en) * 2006-12-15 2008-08-16 Tokyo Electron Ltd Substrate mounting table and method for manufacturing the same, substrate processing apparatus, and fluid supply mechanism
US20080314523A1 (en) * 2007-06-25 2008-12-25 Tokyo Electron Limited Gas supply mechanism and substrate processing apparatus
TW200924017A (en) * 2007-10-31 2009-06-01 Lam Res Corp Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
TW200947603A (en) * 2008-02-08 2009-11-16 Tokyo Electron Ltd Substrate mounting stand for plasma processing device, plasma processing device, and insulating coating deposition method
US20090277874A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate

Also Published As

Publication number Publication date
JP2014160790A (ja) 2014-09-04
TW201438101A (zh) 2014-10-01
KR102188409B1 (ko) 2020-12-08
JP6100564B2 (ja) 2017-03-22
KR20140095430A (ko) 2014-08-01

Similar Documents

Publication Publication Date Title
TWI621173B (zh) 基板處理裝置及載置台
US10941477B2 (en) Substrate processing apparatus and susceptor
KR102383357B1 (ko) 배치대 및 기판 처리 장치
TWI404163B (zh) 用於改良式半導體處理均勻性之熱傳導系統、用於處理一基板之電漿處理系統以及在一處理腔室中處理一基板之方法
TWI657526B (zh) 用於搬運供加工之基板的靜電載體及製作此靜電載體的方法
JP2015095551A (ja) シャワーヘッドアセンブリ及びプラズマ処理装置
JP5294669B2 (ja) プラズマ処理装置
JP5270310B2 (ja) 静電チャック及び基板処理装置
JP5815703B2 (ja) プラズマ処理チャンバ、プラズマ処理チャンバの部品及びその製造方法
KR20170118011A (ko) 강화된 웨이퍼 에지 성능을 갖는 세라믹 가열기 및 esc
JP6345030B2 (ja) プラズマ処理装置及びフォーカスリング
JP6064908B2 (ja) 静電チャック装置
CN108630514A (zh) 基板处理装置
TWI676234B (zh) 具有凸起的頂板及冷卻通道的靜電夾盤
JPH10149899A (ja) 円錐形ドームを有する誘電結合平行平板型プラズマリアクター
JP2016503234A (ja) 金属接合された保護層を有する基板支持アセンブリ
WO2014164910A1 (en) Multi zone heating and cooling esc for plasma process chamber
US11367597B2 (en) Electrostatic chuck and plasma processing apparatus including the same
JP5654083B2 (ja) 静電チャック及び基板処理装置
US20200035535A1 (en) Metal bonded electrostatic chuck for high power application
JP7374103B2 (ja) 静電チャック（ｅｓｃ）ペデスタル電圧分離
US20230136720A1 (en) Substrate support, plasma processing apparatus, and plasma processing method
KR20230054155A (ko) 극저온 정전척 시스템 및 이의 제어 방법