TWI620346B - 發光裝置及其製造方法 - Google Patents

發光裝置及其製造方法 Download PDF

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TWI620346B
TWI620346B TW102124946A TW102124946A TWI620346B TW I620346 B TWI620346 B TW I620346B TW 102124946 A TW102124946 A TW 102124946A TW 102124946 A TW102124946 A TW 102124946A TW I620346 B TWI620346 B TW I620346B
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group iii
iii nitride
light
nanotube
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派翠克 諾倫 葛理洛特
艾塞克 赫許曼 威德森
泰格蘭 尼許安
帕里傑 普拉米爾 戴伯
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皇家飛利浦有限公司
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Abstract

本發明之實施例包含：一Ⅲ族氮化物發光層，其佈置於一n型區域與一p型區域之間；一Ⅲ族氮化物層，其包含一奈米管缺陷；及一奈米管終止層，其佈置於該Ⅲ族氮化物發光層與包括一奈米管缺陷之該Ⅲ族氮化物層之間。奈米管終止於該奈米管終止層。

Description

減少或消除III族氮化物結構中的奈米管缺陷
本發明係關於減少或消除Ⅲ族氮化物結構中的奈米管缺陷。
包含發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊射型雷射之半導體發光裝置係當前可用之最有效率光源中之一。製造能夠橫跨可見光譜而操作之高亮度發光裝置時所關注之當前材料系統包含III-V族半導體，尤其是鎵、鋁、銦及氮之二元合金、三元合金及四元合金(亦被稱為Ⅲ族氮化物材料)。通常，藉由有機金屬化學氣相沈積(MOCVD)、分子束磊晶法(MBE)或其他磊晶技術，通過在一藍寶石、碳化矽、Ⅲ族氮化物或其他適合基板上磊晶生長不同組分及摻雜劑濃度之一堆疊之半導體層而製造Ⅲ族氮化物發光裝置。該堆疊通常包含形成於基板上之摻雜有(例如)Si之一或多個n型層、形成於該或該等n型層上之一作用區域中之一或多個發光層及形成於該作用區域上之摻雜有(例如)Mg之一或多個p型層。電接觸件形成於n型區域及p型區域上。
Ⅲ族氮化物裝置通常生長於藍寶石、Si或SiC基板上。歸因於基板材料與Ⅲ族氮化物半導體材料之間之晶格常數及熱膨脹係數之差異，缺陷在生長期間形成於半導體中，其會限制Ⅲ族氮化物裝置之效率。
本發明之一目的為減少或消除Ⅲ族氮化物結構中的奈米管缺陷。
本發明之實施例包含：一Ⅲ族氮化物發光層，其佈置於一n型區域與一p型區域之間；一Ⅲ族氮化物層，其包含一奈米管缺陷；及一奈米管終止層，其佈置於該Ⅲ族氮化物發光層與包括一奈米管缺陷之該Ⅲ族氮化物層之間。奈米管終止於該奈米管終止層。
本發明之實施例包含：一Ⅲ族氮化物發光層，其佈置於一n型區域與一p型區域之間；及一Ⅲ族氮化物層，其可摻雜有一受體。該n型區域佈置於摻雜有一受體之該Ⅲ族氮化物層與該發光層之間。該受體可為(例如)鎂。
根據本發明之實施例之一方法包含：在一生長基板上生長一Ⅲ族氮化物層，該Ⅲ族氮化物層包含一奈米管缺陷；在該Ⅲ族氮化物層上生長一奈米管終止層；及在該奈米管終止層上生長一Ⅲ族氮化物發光層。奈米管終止於該奈米管終止層。
10‧‧‧基板
12‧‧‧成核層
14‧‧‧島狀物
16‧‧‧高溫Ⅲ族氮化物層/高溫層/高溫GaN層/高溫含奈米管層
18A‧‧‧島狀物
18B‧‧‧島狀物
18C‧‧‧島狀物
18D‧‧‧島狀物
20‧‧‧奈米管
22‧‧‧發光區域/作用區域
24‧‧‧受損區域
26‧‧‧奈米管終止結構(NTS)
28‧‧‧n型區域
30‧‧‧作用區域/發光區域
32‧‧‧p型區域
40‧‧‧層
42‧‧‧層
44‧‧‧層
46‧‧‧層
48‧‧‧層
50‧‧‧層
52‧‧‧層
60‧‧‧金屬p接觸件
62‧‧‧金屬n接觸件
64‧‧‧間隙/第一金屬接觸件
66‧‧‧第二金屬接觸件
70‧‧‧半導體結構
80‧‧‧電連接件
82‧‧‧電連接件
84‧‧‧箭頭
86‧‧‧箭頭
88‧‧‧靜電放電保護二極體
90‧‧‧發光二極體(LED)
圖1繪示生長於一基板上之一Ⅲ族氮化物成核層。
圖2繪示生長於圖1中所繪示之結構上之一高溫層及一作用區域中的一奈米管之形成。
圖3繪示包含一奈米管終止結構之一Ⅲ族氮化物結構。
圖4繪示包含多個受體摻雜層之一奈米管終止結構。
圖5繪示包含一受體摻雜層及一附加層之一奈米管終止結構。
圖6繪示一超晶格奈米管終止結構。
圖7繪示形成為一覆晶裝置之圖3之結構。
圖8繪示併入至一靜電放電保護電路中之一奈米管終止結構。
圖9係圖8中所繪示之結構之一電路圖。
圖1及圖2繪示在本文中被稱為一奈米管之一類型之缺陷之形成。奈米管因其大尺寸(通常為數微米長，及數十或數百埃直徑)而尤其是有問題之缺陷。例如，在Ⅲ族氮化物材料中，一奈米管在一些實施例中可為至少10埃寬及在一些實施例中不超過500埃寬。在一些材料(諸如SiC)中，奈米管可為1微米寬或甚至更寬。奈米管可由雜質(諸如氧、矽、鎂、鋁及GaN薄膜中之銦)引起。奈米管亦可相關於基板表面上之雜質或缺陷(諸如劃痕)，或奈米管可存在於基板本身中，且可自基板延續至生長於基板上之Ⅲ族氮化物材料中。奈米管通常以每平方公分約106之一密度形成於Ⅲ族氮化物裝置中，該密度遠低於典型Ⅲ族氮化物裝置中之位錯密度(其可自每平方公分約107變動至每平方公分約1010)。
圖1中，一低溫成核層12(通常為GaN或AIN)沈積於一基板10上，該基板可為(例如)藍寶石、SiC、Si、一複合基板或任何另一適合基板。成核層12通常為在(例如)低於800℃之一溫度處所沈積之多晶或非晶層。接著，在高於該沈積溫度之一溫度處使成核層12退火。當使成核層12退火時，成核層在基板上形成成核層之小分離島狀物14。
在圖2中，一高溫Ⅲ族氮化物層16(通常為GaN)生長於成核層12上，以減小裝置中之穿透位錯之密度且產生其上可生長作用區域及其他裝置層之一光滑均勻表面。高溫層16最初成核於島狀物14上，以導致最終聚結成一光滑均勻薄膜之個別島狀物18A、18B、18C及18D。島狀物之間之大多數邊界聚結以形成一光滑均勻薄膜，但此等邊界(諸如島狀物18A與18B之間之邊界或島狀物18C與18D之間之邊界)可含有一或多個位錯以因此引起每平方公分約107至每平方公分1010之一穿透位錯密度。雖然大多數島狀物已聚結，但一些島狀物之間留有間隙，且此等間隙形成通常被稱為奈米管之長窄缺陷。圖2中繪示島狀 物18B與18C之間之此一奈米管20。在Ⅲ族氮化物裝置(諸如LED)中，一發光或作用區域22生長於高溫層16上。奈米管20可在作用區域22附近蔓延或蔓延至作用區域22中以形成一受損區域24。作用區域中之此等受損區域可引起不佳之LED效能及不佳之可靠性，且因此係非所要的。
在本發明之實施例中，於作用區域之前生長防止一奈米管蔓延至一後續生長層中或減小該奈米管之尺寸之一結構(在本文中被稱為一「奈米管終止結構」或NTS)。圖3繪示包含一NTS之一Ⅲ族氮化物結構。在圖3中，一高溫層16(通常為一未摻雜或n型GaN層)生長於一基板上之一成核層(圖中未展示)上，如上文圖1及圖2中所描述。該高溫層可包含一或多個奈米管20。一NTS 26生長於包含奈米管20之高溫層16上。NTS 26之至少一部分可未經有意摻雜，摻雜有受體(諸如鎂)，或摻雜有施體(諸如Si)。
一n型區域28生長於NTS 26上，隨後依序為作用區域30、一p型區域32。適合發光區域30之實例包含：一單一較厚或較薄之發光層；或一多量子井發光區域，其包含由障壁層分離之多個較薄或較厚發光層。在發射可見光之一裝置中，作用區域30中之該等發光層通常為InGaN。在發射UV光之一裝置中，作用區域30中之該等發光層可為GaN或AlGaN。n型區域28及p型區域32之各者可包含不同組分、厚度及摻雜劑濃度之多個層，其包含未經有意摻雜之層或相反導電性類型之層。在一實例中，n型區域28包含摻雜有Si之至少一n型GaN層，作用區域30包含由GaN障壁層分離之InGaN量子井層，及p型區域32包含摻雜有Mg之至少一p型GaN或AlGaN層。
在一些實施例中，NTS 26係一低溫GaN層。例如，可在比高溫GaN層16之生長溫度低約100℃至約200℃之一溫度處生長一低溫GaN NTS。此低溫GaN NTS在一些實施例中可為至少10奈米厚，在一些實 施例中不超過40奈米，在一些實施例中為25奈米厚，在一些實施例中為至少100奈米厚，在一些實施例中不超過1微米厚，及在一些實施例中為0.5微米厚。該低溫GaN層實質上為一單晶層，且其可經摻雜或未經摻雜。
在一些實施例中，NTS 26為包含鋁之一Ⅲ族氮化物層，諸如AlN、AlGaN、AlBGaN或AlInGaN。一AlxGa1-xN NTS中之組分x在一些實施例中可為至少0.1，在一些實施例中不超過0.5，在一些實施例中為至少0.2，及在一些實施例中不超過0.3。在一實例中，當x=0.25時，一AlxGa1-xN NTS層為150埃厚。厚度及組分之上限取決於在GaN上生長AlGaN時之破裂臨限，所以若NTS 26足夠薄以避免破裂，則可使用AlN。因此，最大允許厚度隨Al組分增大而減小。一含鋁NTS之厚度在一些實施例中可為至少50埃厚，在一些實施例中不超過0.5微米厚，在一些實施例中為至少100埃厚，及在一些實施例中不超過500埃厚。一含鋁NTS可未經摻雜或摻雜有一受體(諸如鎂)。在一些實施例中，該含鋁層包含未摻雜有Si或未經n型摻雜之至少某一最小厚度。例如，此最小厚度在一些實施例中為至少2奈米及在一些實施例中為至少5奈米。
在一些實施例中，NTS 26為摻雜有受體缺陷之一Ⅲ族氮化物層。鎂為較佳受體，但亦可使用其他受體缺陷。此等受體缺陷之其他可能候選者包含碳、鈹或天然缺陷。一鎂摻雜NTS 26可為(例如)包含GaN、InGaN、AlGaN或AlInGaN之任何適合Ⅲ族氮化物材料。在一些實施例中，可在使成核層12退火之後即時生長一鎂摻雜NTS 26，使得通常未經摻雜之高溫層16被省略。鎂濃度在一些實施例中可在自每立方公分1x1017至每立方公分1x1020之範圍內及在一些實施例中在自每立方公分1x1017至每立方公分1x1019之範圍內。此層中之鎂摻雜劑無需在生長之後被活化。
在一些實施例中，一鎂摻雜NTS 26中之鎂的濃度被分級。如本文中所使用，術語「分級」在描述一裝置之一層或若干層中之摻雜劑濃度時意指涵蓋依除組分單步法之外之任何方式達成摻雜劑濃度之一變化的任何結構。各分級層可為一堆疊之子層，該等子層之各者具有不同於其任一相鄰子層之摻雜劑濃度。若該等子層具有可分解厚度，則分級層係一步級(step-graded)層。在一些實施例中，一步級層中之子層可具有在自數十埃至數千埃範圍內之一厚度。在其中個別子層之厚度接近為零之極限情況中，分級層係一連續分級區域。構成各分級層之子層可經配置以形成摻雜劑濃度對厚度之各種分佈，其包含(但不限於)線性坡度、拋物線坡度及冪律坡度。此外，分級層或分級區域不受限於一單梯度分佈，而是可包含具有不同梯度分佈之部分及具有實質上恆定摻雜劑濃度之一或多個部分。例如，在一分級鎂摻雜NTS 26中，鎂濃度可隨NTS 26生長而依一線性方式增大，使得接近於作用區域之NTS 26之一部分中之鎂濃度高於遠離作用區域之NTS 26之一部分中之鎂濃度。
在一些實施例中，NTS 26包含多個層。圖4、圖5及圖6繪示具有多個層之奈米管終止結構。
圖4繪示摻雜有鎂或任何其他適合受體之一NTS 26。層40、42及44之各者可具有一不同摻雜劑濃度。例如，層40可具有0(未摻雜有Mg)至每立方公分2x1018之間之一鎂濃度，層42在一些實施例中可具有每立方公分1x1017至每立方公分1x1020之間之一鎂濃度及在一些實施例中具有每立方公分2x1017至每立方公分5x1019之間之一鎂濃度，及層44可具有0(未摻雜有Mg)至每立方公分1x1019之間之一鎂濃度。在一些實施例中，NTS 26中最接近於作用區域30之層可具有最高摻雜劑濃度。在一些實施例中，NTS 26中最接近於生長基板10之層可具有最低摻雜劑濃度。儘管圖4已繪示三個層，但具有多個受體摻雜 層之一NTS可包含三個以上或三個以下層。層40、42及44可具有相同組分，但其等無需如此。例如，層40、42及44可為GaN、InGaN、AlGaN、AlN或AlInGaN。
在圖5中，NTS 26包含至少兩個層46及48。層46生長於高溫含奈米管層16上。層46可摻雜有鎂或另一受體。層46通常為GaN，但其可為InGaN、AlGaN或AlInGaN。層48生長於層46上。層48可包含鋁及/或銦。例如，層48可為AlGaN、InGaN或AlInGaN。替代地，層48可為在比高溫層16之溫度低100℃至200℃之一溫度處生長之一GaN層。該低溫GaN層可經摻雜或未經摻雜。一作用區域30生長於層48上。作用區域30可生長成與層48直接接觸，或可藉由(例如)一n型區域28而與層48間隔開，如圖3中所繪示。
在圖6中，NTS 26係一超晶格。該超晶格可經摻雜或未經摻雜。該超晶格包含層50及52之多個對。層50與52交替。儘管圖中已繪示三個層對，但可使用更多或更少層對。一作用區域30生長於該超晶格上。作用區域30可生長成與該超晶格直接接觸，或藉由(例如)一n型區域28而與該超晶格間隔開，如圖3中所繪示。儘管該超晶格繪示為開始於與高溫層16直接接觸之一層50且終止於佈置於作用區域30下方之一層52，但該超晶格可開始或終止於一層50或一層52且該超晶格可包含不完全層對。在一實施例中，層50為GaN且層52為AlaGa1-aN，其中一鋁組分a介於0.05與1之間。在一實施例中，層50為GaN及層52為AlN。在一些實施例中，層50為AlbGa1-bN及層52為AlcGa1-cN，其中在一實施例中b≠c，在一些實施例中b>c，及在一些實施例中b<c。在一實施例中，層50及52可具有組分b=0.05及組分c=1。亦可使用應變補償層對，其中(諸如)藉由使用InGaN或另一含銦層而使層50及52之一者壓縮應變，且(諸如)藉由使用AlGaN、AlN或AlInGaN而使層50及52之另一者經受拉伸應變。層50及52之各者在一些實施例中可為(例如) 至少1奈米厚及在一些實施例中不超過50奈米厚。該超晶格之總厚度在一些實施例中可為至少10奈米厚及在一些實施例中不超過1000奈米厚。
在一些實施例中，NTS 26與作用區域30間隔開。例如，NTS 26(其可為上述NTS之任何者)可藉由n型區域28而與作用區域30間隔開。NTS 26在一些實施例中可與作用區域30間隔至少500奈米，在一些實施例中與作用區域30間隔至少1微米，及在一些實施例中與作用區域30間隔不超過5微米。在裝置之作用區域之前生長NTS 26，使得其上生長作用區域30之模板中包含NTS 26。在生長之後，可維持定向，使得NTS位於作用區域下方，或可翻轉裝置，使得NTS位於作用區域上方。
在一些實施例中，作用區域佈置於一n型區域與一p型區域之間。金屬接觸件形成於該n型區域及該p型區域上以使作用區域正向偏壓。在一些實施例中，無金屬接觸件形成於NTS上，使得NTS在裝置中不具有意電作用性，其意謂：NTS並非位於自該等接觸件流動通過半導體結構之電子及電洞之直接路徑中。在一些實施例中，某一電流可非有意地流入至NTS中或非有意地流動通過NTS。
圖3、圖4、圖5及圖6中所繪示之半導體結構可形成為任何適當裝置。圖7繪示一適當裝置之一實例(一覆晶)。半導體結構70可包含成核層12、高溫層16、NTS 26、n型區域28、作用區域30及p型區域32之一或多者，且可包含此等結構或上述此等結構之特徵之任何組合。一金屬p接觸件60形成於p型區域上。若透過與該p接觸件相對之一表面而自半導體結構向外導引大多數光，則p接觸件60可具反射性。可藉由用標準光微影操作來圖案化半導體結構且蝕刻半導體結構以移除p型區域之整個厚度之一部分及發光區域之整個厚度之一部分而形成一覆晶裝置以形成一台面，該台面顯露其上形成一金屬n接觸 件62之n型區域之一表面。可填充有一介電材料之一間隙64使該p接觸件與該n接觸件彼此電隔離。可依任何適合方式形成該台面及該p接觸件與該n接觸件。熟習技術者已熟知該台面及該p接觸件與該n接觸件之形成。如圖7中所繪示，基板10可被移除或薄化，或可仍為裝置之部分。若移除基板10，則可移除或薄化成核層12、高溫層16及NTS 26之任何者或全部。
在一些實施例中，金屬接觸件可形成於NTS及高溫區域兩者上，使得NTS可形成一次級電保護電路(諸如一靜電放電保護電路)之部分。圖8繪示一裝置之一橫截面，其包含形成一靜電放電保護電路之部分的一NTS。圖9係圖8中所繪示之結構之一電路圖。在圖8及圖9之裝置中，NTS 26電連接至n型區域28，及p型區域32電連接至高溫層16，使得NTS 26及高溫層16形成一靜電放電(ESD)保護二極體，該ESD保護二極體反並聯連接至由包圍作用區域30之n型區域28及p型區域32形成之二極體。如圖8中所繪示，第一金屬接觸件64及第二金屬接觸件66分別形成於NTS 26及高溫層16上。台面以及曝露其上形成接觸件62之n型區域的台面可經蝕刻以曝露其上形成接觸件64之NTS 26及曝露其上形成接觸件66之高溫層16。接觸件62與接觸件64之間之電連接件80及接觸件60與66之間之電連接件82可為形成於具有適當介電隔離層之晶片上之金屬層，或可透過外部電路而形成於一基座上。
圖8及圖9中之LED包含n型區域28、作用區域30及p型區域32。藉由將電流施加至分別電連接至p型區域32及n型區域28之金屬接觸件60及62而使LED正向偏壓。該ESD保護二極體包含分別連接至接觸件66及64之高溫層16及NTS 26。
圖9係圖8中所繪示之裝置之一電路圖。圖9中繪示LED 90及靜電放電保護二極體88。箭頭84繪示正常LED操作期間之電流流動。箭頭86繪示在一靜電放電事件期間之電流流動。
儘管在以下實例中半導體發光裝置為發射藍光或UV光之Ⅲ族氮化物LED，但除LED之外之半導體發光裝置(諸如雷射二極體)可在本發明之範疇內。
儘管已詳細描述本發明，但熟習技術者應瞭解，就本發明而言，可在不脫離本文中所描述之發明概念之精神之情況下對本發明作出修改。因此，並不意欲使本發明之範疇受限於所繪示及所描述之特定實施例。

Claims (19)

  1. 一種發光裝置，其包括：一Ⅲ族氮化物發光層，其設置於一n型區域與一p型區域之間；一Ⅲ族氮化物層，其摻雜有一受體，該受體具有呈現一線性坡度(linearly graded)之濃度，摻雜有一受體之該Ⅲ族氮化物層經定位使得該n型區域設置於摻雜有一受體之該Ⅲ族氮化物層與該Ⅲ族氮化物發光層之間；及一層，該層包括一奈米管缺陷，其中摻雜有一受體之該Ⅲ族氮化物層設置於包括一奈米管缺陷之該層與該Ⅲ族氮化物發光層之間，其中該奈米管缺陷終止於摻雜有一受體之該Ⅲ族氮化物層。
  2. 如請求項1之發光裝置，其中該受體係鎂。
  3. 如請求項2之發光裝置，其中摻雜有一受體之該Ⅲ族氮化物層與該n型區域電連接。
  4. 如請求項1之發光裝置，其中摻雜有一受體之該Ⅲ族氮化物層係一第一鎂摻雜層，該裝置進一步包括設置於該第一鎂摻雜層與該Ⅲ族氮化物發光層之間之一第二鎂摻雜層。
  5. 如請求項4之發光裝置，其中該第一鎂摻雜層經摻雜以具有低於該第二鎂摻雜層之一鎂濃度。
  6. 如請求項1之發光裝置，進一步包括一層，該層包括設置於摻雜有一受體之該Ⅲ族氮化物層與該Ⅲ族氮化物發光層之間之鋁。
  7. 如請求項1之發光裝置，其中該Ⅲ族氮化物發光層與摻雜有一受體之該Ⅲ族氮化物層間隔至少1微米。
  8. 一種發光裝置，其包括：一Ⅲ族氮化物發光層，其設置於一n型區域與一p型區域之間；一Ⅲ族氮化物層，其包括一奈米管缺陷；及一奈米管終止層，其包括設置於該Ⅲ族氮化物發光層與該Ⅲ族氮化物層之間之一超晶格(superlattice)，其中該奈米管終止於該奈米管終止層中。
  9. 如請求項8之發光裝置，其中該奈米管終止層包括鋁。
  10. 如請求項9之發光裝置，其中該奈米管終止層含有鎂。
  11. 如請求項8之發光裝置，其中該超晶格包括複數個交替的第一層及第二層。
  12. 如請求項11之發光裝置，其中該等第一層為GaN且該等第二層為AlxGa1-xN，其中0.05
    Figure TWI620346B_C0001
    x
    Figure TWI620346B_C0002
    1。
  13. 如請求項11之發光裝置，其中該等第一層為AlbGa1-bN且該等第二層為AlcGa1-cN，其中b≠c。
  14. 如請求項8之發光裝置，其中該Ⅲ族氮化物發光層與該奈米管終止層間隔至少1微米。
  15. 如請求項8之發光裝置，其中該奈米管終止層與該n型區域電連接。
  16. 如請求項8之發光裝置，其中該奈米管終止層包括一靜電放電保護電路之部分。
  17. 一種製造一發光裝置之方法，該方法包括：在一第一溫度下在一生長基板上生長一Ⅲ族氮化物層，該Ⅲ族氮化物層包括一奈米管缺陷；在比該第一溫度低100℃至200℃之一第二溫度下在該Ⅲ族氮化物層上生長一奈米管終止層，該奈米管終止於該奈米管終止層中；及在該奈米管終止層上生長一Ⅲ族氮化物發光層。
  18. 一種發光裝置，其包括：一Ⅲ族氮化物發光層，其設置於一n型區域與一p型區域之間；及一Ⅲ族氮化物層，其包括一奈米管缺陷；一奈米管終止層，其非經刻意摻雜於該Ⅲ族氮化物發光層與該Ⅲ族氮化物層之間，其中該奈米管終止於該奈米管終止層中。
  19. 如請求項之18之發光裝置，其中該奈米管終止層包括鋁。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105374912B (zh) * 2015-10-28 2017-11-21 厦门市三安光电科技有限公司 发光二极管及其制作方法
CN105895526B (zh) * 2016-04-26 2019-02-01 中国科学院微电子研究所 一种GaN基功率电子器件及其制备方法
US10199532B1 (en) * 2017-09-08 2019-02-05 Mikro Mesa Technology Co., Ltd. Light-emitting diode and method for manufacturing the same
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
CN112956029B (zh) * 2021-01-26 2022-07-08 英诺赛科(苏州)科技有限公司 半导体器件及其制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
TW201001743A (en) * 2008-06-24 2010-01-01 Advanced Optoelectronic Tech Semiconductor device fabrication method and structure thereof
TW201135976A (en) * 2009-12-30 2011-10-16 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and use of an AlGaN-based interlayer
US20110272670A1 (en) * 2003-09-25 2011-11-10 Panasonic Corporation Nitride semiconductor device and production method thereof
US20110309327A1 (en) * 2010-06-21 2011-12-22 Lg Innotek Co., Ltd. Light emitting device, method for fabricating light emitting device, light emitting device package, and lighting system
TW201228026A (en) * 2010-12-30 2012-07-01 Advanced Optoelectronic Tech Method for manufacturing light emitting chip

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3705637B2 (ja) * 1995-11-21 2005-10-12 豊田合成株式会社 ３族窒化物半導体発光素子及びその製造方法
JP3787202B2 (ja) * 1997-01-10 2006-06-21 ローム株式会社 半導体発光素子
US6054716A (en) 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
JP4783483B2 (ja) * 1997-11-07 2011-09-28 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 半導体基板および半導体基板の形成方法
JP3505405B2 (ja) * 1998-10-22 2004-03-08 三洋電機株式会社 半導体素子及びその製造方法
JP3580169B2 (ja) * 1999-03-24 2004-10-20 日亜化学工業株式会社 窒化物半導体素子
JP4583523B2 (ja) * 1999-05-21 2010-11-17 シャープ株式会社 Ｉｉｉ−ｖ族窒化物半導体発光素子及びその製造方法
JP3786544B2 (ja) * 1999-06-10 2006-06-14 パイオニア株式会社 窒化物半導体素子の製造方法及びかかる方法により製造された素子
JP2001077412A (ja) * 1999-09-02 2001-03-23 Sanyo Electric Co Ltd 半導体素子およびその製造方法
US6441393B2 (en) * 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
US6447604B1 (en) 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP3811624B2 (ja) * 2001-04-27 2006-08-23 松下電器産業株式会社 半導体装置
KR100765004B1 (ko) * 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP4019284B2 (ja) 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法
JP2007095873A (ja) * 2005-09-28 2007-04-12 Sumitomo Chemical Co Ltd 電界効果トランジスタ用エピタキシャル基板
JP2007129011A (ja) * 2005-11-02 2007-05-24 Seiko Epson Corp 光半導体素子
KR100665364B1 (ko) * 2005-12-28 2007-01-09 삼성전기주식회사 질화물 반도체 발광 소자
US8519437B2 (en) * 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007057674A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht
WO2009120998A2 (en) * 2008-03-27 2009-10-01 Nitek, Inc. Low resistance ultraviolet light emitting device and method of fabricating the same
CN101621094B (zh) * 2008-06-30 2012-10-17 展晶科技(深圳)有限公司 半导体元件的制造方法及其结构
JP5287406B2 (ja) 2009-03-24 2013-09-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
DE112010003214B4 (de) * 2009-08-07 2016-06-16 Ngk Insulators, Ltd. Epitaxiesubstrat für eine halbleitervorrichtung, verfahren zur herstellung eines epitaxiesubstrats für eine halbleitervorrichtung, und halbleitervorrichtung
JP4681684B1 (ja) 2009-08-24 2011-05-11 Ｄｏｗａエレクトロニクス株式会社 窒化物半導体素子およびその製造方法
WO2011055774A1 (ja) * 2009-11-06 2011-05-12 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法
JP4852174B2 (ja) * 2010-03-01 2012-01-11 Ｄｏｗａエレクトロニクス株式会社 半導体素子およびその製造方法
KR101766719B1 (ko) * 2010-03-25 2017-08-09 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
JP2012033708A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US20110272670A1 (en) * 2003-09-25 2011-11-10 Panasonic Corporation Nitride semiconductor device and production method thereof
TW201001743A (en) * 2008-06-24 2010-01-01 Advanced Optoelectronic Tech Semiconductor device fabrication method and structure thereof
TW201135976A (en) * 2009-12-30 2011-10-16 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and use of an AlGaN-based interlayer
US20110309327A1 (en) * 2010-06-21 2011-12-22 Lg Innotek Co., Ltd. Light emitting device, method for fabricating light emitting device, light emitting device package, and lighting system
TW201228026A (en) * 2010-12-30 2012-07-01 Advanced Optoelectronic Tech Method for manufacturing light emitting chip

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