TWI619261B - 太陽能電池元件及其製造方法及太陽能電池模組 - Google Patents

太陽能電池元件及其製造方法及太陽能電池模組 Download PDF

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Publication number
TWI619261B
TWI619261B TW102125999A TW102125999A TWI619261B TW I619261 B TWI619261 B TW I619261B TW 102125999 A TW102125999 A TW 102125999A TW 102125999 A TW102125999 A TW 102125999A TW I619261 B TWI619261 B TW I619261B
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TW
Taiwan
Prior art keywords
passivation
solar cell
group
passivation layer
forming
Prior art date
Application number
TW102125999A
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English (en)
Chinese (zh)
Other versions
TW201409731A (zh
Inventor
織田明博
吉田誠人
野尻剛
倉田靖
田中徹
足立修一郎
早坂剛
服部孝司
松村三江子
渡邉敬司
森下真年
濱村浩孝
Original Assignee
日立化成股份有限公司
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Application filed by 日立化成股份有限公司 filed Critical 日立化成股份有限公司
Publication of TW201409731A publication Critical patent/TW201409731A/zh
Application granted granted Critical
Publication of TWI619261B publication Critical patent/TWI619261B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
TW102125999A 2012-07-19 2013-07-19 太陽能電池元件及其製造方法及太陽能電池模組 TWI619261B (zh)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2012160336 2012-07-19
JP2012-160336 2012-07-19
JP2012-218389 2012-09-28
JP2012218389 2012-09-28
JP2013-011934 2013-01-25
JP2013011934 2013-01-25
JP2013040153 2013-02-28
JP2013-040155 2013-02-28
JP2013040155 2013-02-28
JP2013-040153 2013-02-28

Publications (2)

Publication Number Publication Date
TW201409731A TW201409731A (zh) 2014-03-01
TWI619261B true TWI619261B (zh) 2018-03-21

Family

ID=49948933

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102125999A TWI619261B (zh) 2012-07-19 2013-07-19 太陽能電池元件及其製造方法及太陽能電池模組

Country Status (4)

Country Link
JP (1) JP6295953B2 (ja)
CN (1) CN104508831B (ja)
TW (1) TWI619261B (ja)
WO (1) WO2014014113A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102173644B1 (ko) * 2014-01-29 2020-11-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN107425083A (zh) * 2017-07-26 2017-12-01 顺德中山大学太阳能研究院 一种叠层背钝化太阳能电池及其制备方法
CN108389914A (zh) * 2018-03-09 2018-08-10 中国科学院宁波材料技术与工程研究所 一种钝化隧穿层材料制备及其在太阳电池的应用

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
JP2004006565A (ja) * 2002-04-16 2004-01-08 Sharp Corp 太陽電池とその製造方法
JP2004266023A (ja) * 2003-02-28 2004-09-24 Sharp Corp 太陽電池およびその製造方法
US20110083735A1 (en) * 2009-10-13 2011-04-14 Ips Ltd. Solar cell and method of fabricating the same
JP2012033538A (ja) * 2010-07-28 2012-02-16 Meiji Univ 太陽電池
TW201225309A (en) * 2010-12-06 2012-06-16 Big Sun Energy Tech Inc Method of fabricating rear surface point contact of solar cells

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031104B2 (ja) * 1979-08-24 1985-07-20 三菱電機株式会社 シリコン半導体素子パツシベ−シヨン用ガラス
JPS5823486A (ja) * 1981-08-04 1983-02-12 Toshiba Corp 太陽電池の製造方法
JPS59178778A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 太陽電池及びその製造方法
JPS6281070A (ja) * 1985-10-03 1987-04-14 Sharp Corp 薄型ＧａＡｓ太陽電池の製造方法
US6548912B1 (en) * 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
JP2004193350A (ja) * 2002-12-11 2004-07-08 Sharp Corp 太陽電池セルおよびその製造方法
US7144751B2 (en) * 2004-02-05 2006-12-05 Advent Solar, Inc. Back-contact solar cells and methods for fabrication
JP4883559B2 (ja) * 2006-03-10 2012-02-22 独立行政法人産業技術総合研究所 光電変換電極
JP4813416B2 (ja) * 2007-04-27 2011-11-09 株式会社堀場製作所 接液部を有するセンサおよびこれを用いた測定方法
JP5477220B2 (ja) * 2010-08-05 2014-04-23 信越化学工業株式会社 太陽電池及びその製造方法
RU2013117118A (ru) * 2010-09-16 2014-10-27 Спекмет, Инк. Способ, процесс и технология изготовления высокоэффективных недорогих кристаллических кремниевых солнечных элементов

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
JP2004006565A (ja) * 2002-04-16 2004-01-08 Sharp Corp 太陽電池とその製造方法
JP2004266023A (ja) * 2003-02-28 2004-09-24 Sharp Corp 太陽電池およびその製造方法
US20110083735A1 (en) * 2009-10-13 2011-04-14 Ips Ltd. Solar cell and method of fabricating the same
JP2012033538A (ja) * 2010-07-28 2012-02-16 Meiji Univ 太陽電池
TW201225309A (en) * 2010-12-06 2012-06-16 Big Sun Energy Tech Inc Method of fabricating rear surface point contact of solar cells

Also Published As

Publication number Publication date
CN104508831A (zh) 2015-04-08
WO2014014113A9 (ja) 2014-07-31
JPWO2014014113A1 (ja) 2016-07-07
JP6295953B2 (ja) 2018-03-20
TW201409731A (zh) 2014-03-01
CN104508831B (zh) 2017-05-03
WO2014014113A1 (ja) 2014-01-23

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