TWI618081B - 半導體裝置的驅動方法 - Google Patents
半導體裝置的驅動方法 Download PDFInfo
- Publication number
- TWI618081B TWI618081B TW103117143A TW103117143A TWI618081B TW I618081 B TWI618081 B TW I618081B TW 103117143 A TW103117143 A TW 103117143A TW 103117143 A TW103117143 A TW 103117143A TW I618081 B TWI618081 B TW I618081B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- potential
- wiring
- bit line
- electrically connected
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 139
- 238000000034 method Methods 0.000 title claims description 54
- 239000013078 crystal Substances 0.000 claims description 32
- 230000007423 decrease Effects 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000010408 film Substances 0.000 description 172
- 230000006870 function Effects 0.000 description 42
- 229910044991 metal oxide Inorganic materials 0.000 description 42
- 150000004706 metal oxides Chemical class 0.000 description 42
- 239000011701 zinc Substances 0.000 description 33
- 238000010586 diagram Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 17
- 239000004020 conductor Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 239000012212 insulator Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000000470 constituent Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 238000003917 TEM image Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000003381 stabilizer Substances 0.000 description 6
- 229910052777 Praseodymium Inorganic materials 0.000 description 5
- 229910020994 Sn-Zn Inorganic materials 0.000 description 5
- 229910009069 Sn—Zn Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 4
- 229910018137 Al-Zn Inorganic materials 0.000 description 3
- 229910018573 Al—Zn Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013114562 | 2013-05-30 | ||
| JP2013114564 | 2013-05-30 | ||
| JP2013-114562 | 2013-05-30 | ||
| JP2013-114564 | 2013-05-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201515005A TW201515005A (zh) | 2015-04-16 |
| TWI618081B true TWI618081B (zh) | 2018-03-11 |
Family
ID=52338192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103117143A TWI618081B (zh) | 2013-05-30 | 2014-05-15 | 半導體裝置的驅動方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9196345B2 (enExample) |
| JP (1) | JP6305829B2 (enExample) |
| KR (1) | KR102229962B1 (enExample) |
| TW (1) | TWI618081B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9153699B2 (en) * | 2012-06-15 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with multiple oxide semiconductor layers |
| WO2016055903A1 (en) | 2014-10-10 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
| US9424890B2 (en) | 2014-12-01 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US10522693B2 (en) * | 2015-01-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| JP6444745B2 (ja) * | 2015-01-22 | 2018-12-26 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
| US9647132B2 (en) | 2015-01-30 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| US9653613B2 (en) * | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10424671B2 (en) | 2015-07-29 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, circuit board, and electronic device |
| US10008502B2 (en) * | 2016-05-04 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| WO2018073708A1 (en) * | 2016-10-20 | 2018-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Storage device, driving method thereof, semiconductor device, electronic component, and electronic device |
| CN114637232B (zh) * | 2020-12-16 | 2024-06-21 | 致新科技股份有限公司 | 物理参数产生器 |
| JP7638768B2 (ja) | 2021-04-05 | 2025-03-04 | キオクシア株式会社 | 半導体記憶装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6898105B2 (en) * | 2002-06-19 | 2005-05-24 | National Institute Of Advanced Industrial Science And Technology | Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device |
| US7440334B2 (en) * | 2003-09-25 | 2008-10-21 | Infineon Technologies | Multi-transistor memory cells |
| US7889553B2 (en) * | 2007-04-24 | 2011-02-15 | Novelics, Llc. | Single-poly non-volatile memory cell |
| US20110134683A1 (en) * | 2009-11-06 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8009459B2 (en) * | 2008-12-30 | 2011-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit for high speed dynamic memory |
| TW201212032A (en) * | 2010-06-24 | 2012-03-16 | Semiconductor Components Ind | Method of using a nonvolatile memory cell |
| US20120087170A1 (en) * | 2010-10-07 | 2012-04-12 | Lu Hau-Yan | Single Polysilicon Non-Volatile Memory |
| US20120134196A1 (en) * | 2010-11-30 | 2012-05-31 | Evans Jr Joseph T | Analog memories utilizing ferroelectric capacitors |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7027326B2 (en) * | 2004-01-05 | 2006-04-11 | International Business Machines Corporation | 3T1D memory cells using gated diodes and methods of use thereof |
| JP5181423B2 (ja) * | 2006-03-20 | 2013-04-10 | ソニー株式会社 | 半導体メモリデバイスとその動作方法 |
| US7466617B2 (en) * | 2007-01-16 | 2008-12-16 | International Business Machines Corporation | Multi-port dynamic memory structures |
| WO2010047288A1 (en) | 2008-10-24 | 2010-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductordevice |
| US8328105B2 (en) | 2009-03-31 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101788521B1 (ko) | 2009-10-30 | 2017-10-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN104600074A (zh) | 2009-11-06 | 2015-05-06 | 株式会社半导体能源研究所 | 半导体装置 |
| KR101928723B1 (ko) * | 2009-11-20 | 2018-12-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011114868A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2011114905A1 (en) | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| KR101904445B1 (ko) | 2010-04-16 | 2018-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI555128B (zh) | 2010-08-06 | 2016-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的驅動方法 |
| US8422272B2 (en) | 2010-08-06 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US8634228B2 (en) | 2010-09-02 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
| KR20150128820A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
| KR20150128823A (ko) | 2013-03-14 | 2015-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 및 반도체 장치 |
| JP6093726B2 (ja) | 2013-03-22 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2014
- 2014-05-15 TW TW103117143A patent/TWI618081B/zh not_active IP Right Cessation
- 2014-05-26 KR KR1020140063152A patent/KR102229962B1/ko not_active Expired - Fee Related
- 2014-05-28 US US14/288,894 patent/US9196345B2/en active Active
- 2014-05-29 JP JP2014110882A patent/JP6305829B2/ja not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6898105B2 (en) * | 2002-06-19 | 2005-05-24 | National Institute Of Advanced Industrial Science And Technology | Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device |
| US7440334B2 (en) * | 2003-09-25 | 2008-10-21 | Infineon Technologies | Multi-transistor memory cells |
| US7889553B2 (en) * | 2007-04-24 | 2011-02-15 | Novelics, Llc. | Single-poly non-volatile memory cell |
| US8009459B2 (en) * | 2008-12-30 | 2011-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit for high speed dynamic memory |
| US20110134683A1 (en) * | 2009-11-06 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| TW201212032A (en) * | 2010-06-24 | 2012-03-16 | Semiconductor Components Ind | Method of using a nonvolatile memory cell |
| US20120087170A1 (en) * | 2010-10-07 | 2012-04-12 | Lu Hau-Yan | Single Polysilicon Non-Volatile Memory |
| US20120134196A1 (en) * | 2010-11-30 | 2012-05-31 | Evans Jr Joseph T | Analog memories utilizing ferroelectric capacitors |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102229962B1 (ko) | 2021-03-18 |
| US20140355339A1 (en) | 2014-12-04 |
| TW201515005A (zh) | 2015-04-16 |
| US9196345B2 (en) | 2015-11-24 |
| JP6305829B2 (ja) | 2018-04-04 |
| JP2015008030A (ja) | 2015-01-15 |
| KR20140141472A (ko) | 2014-12-10 |
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