TWI618081B - 半導體裝置的驅動方法 - Google Patents

半導體裝置的驅動方法 Download PDF

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Publication number
TWI618081B
TWI618081B TW103117143A TW103117143A TWI618081B TW I618081 B TWI618081 B TW I618081B TW 103117143 A TW103117143 A TW 103117143A TW 103117143 A TW103117143 A TW 103117143A TW I618081 B TWI618081 B TW I618081B
Authority
TW
Taiwan
Prior art keywords
transistor
potential
wiring
bit line
electrically connected
Prior art date
Application number
TW103117143A
Other languages
English (en)
Chinese (zh)
Other versions
TW201515005A (zh
Inventor
Hiroki Inoue
井上広樹
Takanori Matsuzaki
松嵜徳
Tomoaki Atsumi
熱海知昭
Original Assignee
Semiconductor Energy Laboratory Co., Ltd.
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co., Ltd., 半導體能源研究所股份有限公司 filed Critical Semiconductor Energy Laboratory Co., Ltd.
Publication of TW201515005A publication Critical patent/TW201515005A/zh
Application granted granted Critical
Publication of TWI618081B publication Critical patent/TWI618081B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW103117143A 2013-05-30 2014-05-15 半導體裝置的驅動方法 TWI618081B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013114562 2013-05-30
JP2013114564 2013-05-30
JP2013-114564 2013-05-30
JP2013-114562 2013-05-30

Publications (2)

Publication Number Publication Date
TW201515005A TW201515005A (zh) 2015-04-16
TWI618081B true TWI618081B (zh) 2018-03-11

Family

ID=52338192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103117143A TWI618081B (zh) 2013-05-30 2014-05-15 半導體裝置的驅動方法

Country Status (4)

Country Link
US (1) US9196345B2 (enExample)
JP (1) JP6305829B2 (enExample)
KR (1) KR102229962B1 (enExample)
TW (1) TWI618081B (enExample)

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* Cited by examiner, † Cited by third party
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US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
KR20170069207A (ko) 2014-10-10 2017-06-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 회로 기판, 및 전자 기기
US9424890B2 (en) 2014-12-01 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JP6444745B2 (ja) * 2015-01-22 2018-12-26 東芝メモリ株式会社 半導体装置及びその製造方法
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10008502B2 (en) * 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
CN114637232B (zh) * 2020-12-16 2024-06-21 致新科技股份有限公司 物理参数产生器
JP7638768B2 (ja) * 2021-04-05 2025-03-04 キオクシア株式会社 半導体記憶装置
WO2026033397A1 (ja) * 2024-08-08 2026-02-12 株式会社半導体エネルギー研究所 半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6898105B2 (en) * 2002-06-19 2005-05-24 National Institute Of Advanced Industrial Science And Technology Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device
US7440334B2 (en) * 2003-09-25 2008-10-21 Infineon Technologies Multi-transistor memory cells
US7889553B2 (en) * 2007-04-24 2011-02-15 Novelics, Llc. Single-poly non-volatile memory cell
US20110134683A1 (en) * 2009-11-06 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8009459B2 (en) * 2008-12-30 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit for high speed dynamic memory
TW201212032A (en) * 2010-06-24 2012-03-16 Semiconductor Components Ind Method of using a nonvolatile memory cell
US20120087170A1 (en) * 2010-10-07 2012-04-12 Lu Hau-Yan Single Polysilicon Non-Volatile Memory
US20120134196A1 (en) * 2010-11-30 2012-05-31 Evans Jr Joseph T Analog memories utilizing ferroelectric capacitors

Family Cites Families (17)

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US7027326B2 (en) * 2004-01-05 2006-04-11 International Business Machines Corporation 3T1D memory cells using gated diodes and methods of use thereof
JP5181423B2 (ja) * 2006-03-20 2013-04-10 ソニー株式会社 半導体メモリデバイスとその動作方法
US7466617B2 (en) * 2007-01-16 2008-12-16 International Business Machines Corporation Multi-port dynamic memory structures
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
US8328105B2 (en) 2009-03-31 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011052488A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101824854B1 (ko) 2009-11-06 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) * 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101840797B1 (ko) 2010-03-19 2018-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치
WO2011129233A1 (en) 2010-04-16 2011-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
KR20150128823A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6898105B2 (en) * 2002-06-19 2005-05-24 National Institute Of Advanced Industrial Science And Technology Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory device
US7440334B2 (en) * 2003-09-25 2008-10-21 Infineon Technologies Multi-transistor memory cells
US7889553B2 (en) * 2007-04-24 2011-02-15 Novelics, Llc. Single-poly non-volatile memory cell
US8009459B2 (en) * 2008-12-30 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit for high speed dynamic memory
US20110134683A1 (en) * 2009-11-06 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TW201212032A (en) * 2010-06-24 2012-03-16 Semiconductor Components Ind Method of using a nonvolatile memory cell
US20120087170A1 (en) * 2010-10-07 2012-04-12 Lu Hau-Yan Single Polysilicon Non-Volatile Memory
US20120134196A1 (en) * 2010-11-30 2012-05-31 Evans Jr Joseph T Analog memories utilizing ferroelectric capacitors

Also Published As

Publication number Publication date
KR102229962B1 (ko) 2021-03-18
US20140355339A1 (en) 2014-12-04
JP6305829B2 (ja) 2018-04-04
KR20140141472A (ko) 2014-12-10
JP2015008030A (ja) 2015-01-15
TW201515005A (zh) 2015-04-16
US9196345B2 (en) 2015-11-24

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