KR102229962B1 - 반도체 장치의 구동 방법 - Google Patents

반도체 장치의 구동 방법 Download PDF

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Publication number
KR102229962B1
KR102229962B1 KR1020140063152A KR20140063152A KR102229962B1 KR 102229962 B1 KR102229962 B1 KR 102229962B1 KR 1020140063152 A KR1020140063152 A KR 1020140063152A KR 20140063152 A KR20140063152 A KR 20140063152A KR 102229962 B1 KR102229962 B1 KR 102229962B1
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KR
South Korea
Prior art keywords
transistor
wiring
potential
bit line
electrically connected
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Expired - Fee Related
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KR1020140063152A
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English (en)
Korean (ko)
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KR20140141472A (ko
Inventor
히로키 이노우에
다카노리 마츠자키
도모아키 아츠미
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20140141472A publication Critical patent/KR20140141472A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020140063152A 2013-05-30 2014-05-26 반도체 장치의 구동 방법 Expired - Fee Related KR102229962B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2013-114562 2013-05-30
JP2013114562 2013-05-30
JP2013114564 2013-05-30
JPJP-P-2013-114564 2013-05-30

Publications (2)

Publication Number Publication Date
KR20140141472A KR20140141472A (ko) 2014-12-10
KR102229962B1 true KR102229962B1 (ko) 2021-03-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140063152A Expired - Fee Related KR102229962B1 (ko) 2013-05-30 2014-05-26 반도체 장치의 구동 방법

Country Status (4)

Country Link
US (1) US9196345B2 (enExample)
JP (1) JP6305829B2 (enExample)
KR (1) KR102229962B1 (enExample)
TW (1) TWI618081B (enExample)

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US9153699B2 (en) * 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
WO2016055903A1 (en) 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US9424890B2 (en) 2014-12-01 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US10522693B2 (en) * 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
JP6444745B2 (ja) * 2015-01-22 2018-12-26 東芝メモリ株式会社 半導体装置及びその製造方法
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US9647132B2 (en) 2015-01-30 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US9653613B2 (en) * 2015-02-27 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US10424671B2 (en) 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
US10008502B2 (en) * 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
WO2018073708A1 (en) * 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
CN114637232B (zh) * 2020-12-16 2024-06-21 致新科技股份有限公司 物理参数产生器
JP7638768B2 (ja) 2021-04-05 2025-03-04 キオクシア株式会社 半導体記憶装置

Citations (2)

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US20050146928A1 (en) * 2004-01-05 2005-07-07 International Business Machines Corporation 3T1D memory cells using gated diodes and methods of use thereof
US20090059653A1 (en) * 2007-01-16 2009-03-05 International Business Machines Corporation Multi-port dynamic memory methods

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JP4373647B2 (ja) * 2002-06-19 2009-11-25 独立行政法人産業技術総合研究所 強誘電体不揮発性記憶装置及びその駆動方法
DE10344604B4 (de) * 2003-09-25 2011-08-11 Infineon Technologies AG, 81669 Speichereinheit mit Sammelelektroden
JP5181423B2 (ja) * 2006-03-20 2013-04-10 ソニー株式会社 半導体メモリデバイスとその動作方法
US7889553B2 (en) * 2007-04-24 2011-02-15 Novelics, Llc. Single-poly non-volatile memory cell
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
US8009459B2 (en) * 2008-12-30 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit for high speed dynamic memory
US8328105B2 (en) 2009-03-31 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101788521B1 (ko) 2009-10-30 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104600074A (zh) 2009-11-06 2015-05-06 株式会社半导体能源研究所 半导体装置
KR101761432B1 (ko) * 2009-11-06 2017-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) * 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011114868A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011114905A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101904445B1 (ko) 2010-04-16 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8279681B2 (en) * 2010-06-24 2012-10-02 Semiconductor Components Industries, Llc Method of using a nonvolatile memory cell
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8339831B2 (en) * 2010-10-07 2012-12-25 Ememory Technology Inc. Single polysilicon non-volatile memory
US8760907B2 (en) * 2010-11-30 2014-06-24 Radiant Technologies, Inc. Analog memories utilizing ferroelectric capacitors
KR20150128820A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
KR20150128823A (ko) 2013-03-14 2015-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법 및 반도체 장치
JP6093726B2 (ja) 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050146928A1 (en) * 2004-01-05 2005-07-07 International Business Machines Corporation 3T1D memory cells using gated diodes and methods of use thereof
US20090059653A1 (en) * 2007-01-16 2009-03-05 International Business Machines Corporation Multi-port dynamic memory methods

Also Published As

Publication number Publication date
TWI618081B (zh) 2018-03-11
US20140355339A1 (en) 2014-12-04
TW201515005A (zh) 2015-04-16
US9196345B2 (en) 2015-11-24
JP6305829B2 (ja) 2018-04-04
JP2015008030A (ja) 2015-01-15
KR20140141472A (ko) 2014-12-10

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