TWI617903B - 用於在微影系統中測定基板的位置的系統，以及用於此系統中的基板 - Google Patents
用於在微影系統中測定基板的位置的系統，以及用於此系統中的基板 Download PDFInfo
- Publication number
- TWI617903B TWI617903B TW102138900A TW102138900A TWI617903B TW I617903 B TWI617903 B TW I617903B TW 102138900 A TW102138900 A TW 102138900A TW 102138900 A TW102138900 A TW 102138900A TW I617903 B TWI617903 B TW I617903B
- Authority
- TW
- Taiwan
- Prior art keywords
- range
- optical
- mark
- substrate
- optical position
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 238000001459 lithography Methods 0.000 title claims description 49
- 238000000034 method Methods 0.000 title description 51
- 230000003287 optical effect Effects 0.000 claims abstract description 279
- 230000008859 change Effects 0.000 claims abstract description 21
- 239000003550 marker Substances 0.000 claims description 77
- 230000011218 segmentation Effects 0.000 claims description 27
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 14
- 238000005314 correlation function Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 36
- 239000010410 layer Substances 0.000 description 20
- 238000005259 measurement Methods 0.000 description 17
- 230000008901 benefit Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 238000002474 experimental method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000013519 translation Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- ZTENZJJCFACIAK-ADWVOTLJSA-N (2r)-2-[[(1r,3s,4s)-3-[[4-(5-benzyl-2-ethylpyrazol-3-yl)piperidin-1-yl]methyl]-4-(3-fluorophenyl)cyclopentyl]-methylamino]-3-methylbutanoic acid Chemical compound C1=C(C2CCN(C[C@@H]3[C@H](C[C@H](C3)N(C)[C@H](C(C)C)C(O)=O)C=3C=C(F)C=CC=3)CC2)N(CC)N=C1CC1=CC=CC=C1 ZTENZJJCFACIAK-ADWVOTLJSA-N 0.000 description 2
- 101150100772 MRK1 gene Proteins 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261718872P | 2012-10-26 | 2012-10-26 | |
| US61/718,872 | 2012-10-26 | ||
| US201261732445P | 2012-12-03 | 2012-12-03 | |
| US61/732,445 | 2012-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201426208A TW201426208A (zh) | 2014-07-01 |
| TWI617903B true TWI617903B (zh) | 2018-03-11 |
Family
ID=49515344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102138900A TWI617903B (zh) | 2012-10-26 | 2013-10-28 | 用於在微影系統中測定基板的位置的系統，以及用於此系統中的基板 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10054863B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2912521A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6367209B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR102215545B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104885014B (cg-RX-API-DMAC7.html) |
| NL (1) | NL2011681C2 (cg-RX-API-DMAC7.html) |
| RU (1) | RU2659967C2 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI617903B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014064290A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6449985B2 (ja) | 2014-07-30 | 2019-01-09 | エーエスエムエル ネザーランズ ビー．ブイ． | アライメントセンサおよびリソグラフィ装置 |
| US9484188B2 (en) | 2015-03-11 | 2016-11-01 | Mapper Lithography Ip B.V. | Individual beam pattern placement verification in multiple beam lithography |
| DE102015211879B4 (de) * | 2015-06-25 | 2018-10-18 | Carl Zeiss Ag | Vermessen von individuellen Daten einer Brille |
| US10386173B2 (en) * | 2015-11-19 | 2019-08-20 | Kris Vossough | Integrated sensory systems |
| KR20170105247A (ko) * | 2016-03-09 | 2017-09-19 | 삼성전자주식회사 | 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법 |
| CN105845596B (zh) * | 2016-04-21 | 2018-12-04 | 京东方科技集团股份有限公司 | 一种测试设备及测试方法 |
| EP3467591A4 (en) * | 2016-05-31 | 2020-02-12 | Nikon Corporation | BRAND DETECTION APPARATUS, BRAND DETECTION METHOD, MEASURING APPARATUS, EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD |
| CN109643071B (zh) * | 2016-08-15 | 2021-04-23 | Asml荷兰有限公司 | 对准方法 |
| US10021372B2 (en) | 2016-09-16 | 2018-07-10 | Qualcomm Incorporated | Systems and methods for improved depth sensing |
| US10418290B2 (en) * | 2017-02-02 | 2019-09-17 | United Microelectronics Corp. | Method of patterning semiconductor device |
| US10585360B2 (en) * | 2017-08-25 | 2020-03-10 | Applied Materials, Inc. | Exposure system alignment and calibration method |
| US10670802B2 (en) * | 2017-08-31 | 2020-06-02 | University of Pittsburgh—of the Commonwealth System of Higher Education | Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same |
| CN107728236B (zh) * | 2017-10-26 | 2019-07-05 | 鲁东大学 | 超构表面元件的制造方法及其产生纳米尺度纵向光斑链的方法 |
| US10593509B2 (en) | 2018-07-17 | 2020-03-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US10483080B1 (en) * | 2018-07-17 | 2019-11-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| WO2020180470A1 (en) * | 2019-03-01 | 2020-09-10 | Applied Materials, Inc. | Transparent wafer center finder |
| CN115280460A (zh) | 2020-03-13 | 2022-11-01 | Asml荷兰有限公司 | 多带电粒子束检查中的调平传感器 |
| KR20220044016A (ko) | 2020-09-29 | 2022-04-06 | 삼성전자주식회사 | 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201211701A (en) * | 2010-04-12 | 2012-03-16 | Asml Netherlands Bv | Substrate handling apparatus and lithographic apparatus |
| US20120267802A1 (en) * | 2011-04-22 | 2012-10-25 | Guido De Boer | Position determination in a lithography system using a substrate having a partially reflective position mark |
| US20120268724A1 (en) * | 2011-04-22 | 2012-10-25 | Guido De Boer | Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system |
| TW201245900A (en) * | 2011-03-11 | 2012-11-16 | Asml Netherlands Bv | Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631416A (en) | 1983-12-19 | 1986-12-23 | Hewlett-Packard Company | Wafer/mask alignment system using diffraction gratings |
| AT393925B (de) | 1987-06-02 | 1992-01-10 | Ims Ionen Mikrofab Syst | Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind |
| US5523193A (en) * | 1988-05-31 | 1996-06-04 | Texas Instruments Incorporated | Method and apparatus for patterning and imaging member |
| JPH0786121A (ja) | 1993-06-30 | 1995-03-31 | Canon Inc | ずれ測定方法及びそれを用いた位置検出装置 |
| JPH07248208A (ja) * | 1994-03-11 | 1995-09-26 | Nikon Corp | 位置合わせ装置 |
| US5827629A (en) | 1995-05-11 | 1998-10-27 | Sumitomo Heavy Industries, Ltd. | Position detecting method with observation of position detecting marks |
| JPH1038514A (ja) * | 1996-07-23 | 1998-02-13 | Nikon Corp | 位置検出装置 |
| KR970028876A (ko) | 1995-11-10 | 1997-06-24 | 오노 시게오 | 위치검출장치 |
| EP1184896A4 (en) | 1999-01-18 | 2006-05-10 | Nikon Corp | MODEL COMPARISON METHOD AND APPARATUS, POSITION IDENTIFICATION METHOD AND APPARATUS, LOCATION JUSTAGEMETHODE AND APPARATUS AND APPARATUS AND ITS MANUFACTURE |
| EP1111473A3 (en) | 1999-12-23 | 2004-04-21 | ASML Netherlands B.V. | Lithographic apparatus with vacuum chamber and interferometric alignment system |
| JP3989697B2 (ja) * | 2001-05-30 | 2007-10-10 | 富士通株式会社 | 半導体装置及び半導体装置の位置検出方法 |
| US7116626B1 (en) | 2001-11-27 | 2006-10-03 | Inphase Technologies, Inc. | Micro-positioning movement of holographic data storage system components |
| JP4165871B2 (ja) | 2002-03-15 | 2008-10-15 | キヤノン株式会社 | 位置検出方法、位置検出装置及び露光装置 |
| JP4999781B2 (ja) | 2002-03-15 | 2012-08-15 | キヤノン株式会社 | 位置検出装置及び方法、露光装置、デバイス製造方法 |
| JP4222927B2 (ja) * | 2002-09-20 | 2009-02-12 | エーエスエムエル ネザーランズ ビー．ブイ． | 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム |
| EP1400860B1 (en) * | 2002-09-20 | 2013-11-06 | ASML Netherlands B.V. | Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure |
| US7425396B2 (en) | 2003-09-30 | 2008-09-16 | Infineon Technologies Ag | Method for reducing an overlay error and measurement mark for carrying out the same |
| JP2005116626A (ja) | 2003-10-03 | 2005-04-28 | Canon Inc | 位置検出装置及び位置検出方法、並びに露光装置 |
| US20060061743A1 (en) * | 2004-09-22 | 2006-03-23 | Asml Netherlands B.V. | Lithographic apparatus, alignment system, and device manufacturing method |
| US7271907B2 (en) * | 2004-12-23 | 2007-09-18 | Asml Netherlands B.V. | Lithographic apparatus with two-dimensional alignment measurement arrangement and two-dimensional alignment measurement method |
| US7626701B2 (en) * | 2004-12-27 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus with multiple alignment arrangements and alignment measuring method |
| JP4520429B2 (ja) * | 2005-06-01 | 2010-08-04 | エーエスエムエル ネザーランズ ビー．ブイ． | 位置合わせ装置への２次元フォトニック結晶の応用 |
| US7863763B2 (en) * | 2005-11-22 | 2011-01-04 | Asml Netherlands B.V. | Binary sinusoidal sub-wavelength gratings as alignment marks |
| US20080079920A1 (en) | 2006-09-29 | 2008-04-03 | Heiko Hommen | Wafer exposure device and method |
| NL2002954A1 (nl) * | 2008-06-11 | 2009-12-14 | Asml Netherlands Bv | Sub-segmented alignment mark arrangement. |
| NL2003762A (en) * | 2008-11-18 | 2010-05-20 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| NL2008111A (en) * | 2011-02-18 | 2012-08-21 | Asml Netherlands Bv | Optical apparatus, method of scanning, lithographic apparatus and device manufacturing method. |
-
2013
- 2013-10-28 KR KR1020197032495A patent/KR102215545B1/ko active Active
- 2013-10-28 NL NL2011681A patent/NL2011681C2/en active
- 2013-10-28 TW TW102138900A patent/TWI617903B/zh active
- 2013-10-28 WO PCT/EP2013/072518 patent/WO2014064290A1/en not_active Ceased
- 2013-10-28 EP EP13785411.3A patent/EP2912521A1/en not_active Withdrawn
- 2013-10-28 JP JP2015538484A patent/JP6367209B2/ja active Active
- 2013-10-28 KR KR1020157013835A patent/KR102042212B1/ko active Active
- 2013-10-28 CN CN201380068339.9A patent/CN104885014B/zh active Active
- 2013-10-28 RU RU2015119644A patent/RU2659967C2/ru active
-
2015
- 2015-02-25 US US14/630,678 patent/US10054863B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201211701A (en) * | 2010-04-12 | 2012-03-16 | Asml Netherlands Bv | Substrate handling apparatus and lithographic apparatus |
| TW201245900A (en) * | 2011-03-11 | 2012-11-16 | Asml Netherlands Bv | Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process |
| US20120267802A1 (en) * | 2011-04-22 | 2012-10-25 | Guido De Boer | Position determination in a lithography system using a substrate having a partially reflective position mark |
| US20120268724A1 (en) * | 2011-04-22 | 2012-10-25 | Guido De Boer | Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104885014A (zh) | 2015-09-02 |
| RU2015119644A (ru) | 2016-12-20 |
| RU2659967C2 (ru) | 2018-07-04 |
| JP2016500845A (ja) | 2016-01-14 |
| US20150177625A1 (en) | 2015-06-25 |
| CN104885014B (zh) | 2017-05-31 |
| US10054863B2 (en) | 2018-08-21 |
| JP6367209B2 (ja) | 2018-08-01 |
| KR102042212B1 (ko) | 2019-11-08 |
| KR20150070407A (ko) | 2015-06-24 |
| KR102215545B1 (ko) | 2021-02-16 |
| EP2912521A1 (en) | 2015-09-02 |
| KR20190126457A (ko) | 2019-11-11 |
| WO2014064290A1 (en) | 2014-05-01 |
| NL2011681C2 (en) | 2014-05-01 |
| TW201426208A (zh) | 2014-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI617903B (zh) | 用於在微影系統中測定基板的位置的系統，以及用於此系統中的基板 | |
| US9760028B2 (en) | Lithography system and method for processing a target, such as a wafer | |
| NL2008679C2 (en) | Position determination in a lithography system using a substrate having a partially reflective position mark. | |
| US8617774B2 (en) | Method and calibration mask for calibrating a position measuring apparatus | |
| TWI627513B (zh) | 用於感測或判定一工件之對準及高度之器件及方法、對準感測器及電子束微影之裝置 | |
| US7535581B2 (en) | Nanometer-level mix-and-match scanning tip and electron beam lithography using global backside position reference marks | |
| KR102554797B1 (ko) | 다중 빔 리소그래피에서의 개개의 빔 패턴 배치 검증 | |
| KR20130010845A (ko) | 하전 입자 빔 묘화 장치 및 물품 제조 방법 | |
| WO2020125793A1 (zh) | 投影物镜波像差检测装置及方法、光刻机 | |
| JP3003671B2 (ja) | 試料表面の高さ検出方法及びその装置 | |
| JPH0367103A (ja) | 位置検出装置及び方法 |