TWI617894B - 液浸構件、曝光裝置、及元件製造方法 - Google Patents
液浸構件、曝光裝置、及元件製造方法 Download PDFInfo
- Publication number
- TWI617894B TWI617894B TW102125369A TW102125369A TWI617894B TW I617894 B TWI617894 B TW I617894B TW 102125369 A TW102125369 A TW 102125369A TW 102125369 A TW102125369 A TW 102125369A TW I617894 B TWI617894 B TW I617894B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- substrate
- liquid immersion
- path
- space
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 575
- 238000007654 immersion Methods 0.000 title claims abstract description 168
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title description 23
- 238000011084 recovery Methods 0.000 claims abstract description 216
- 230000003287 optical effect Effects 0.000 claims abstract description 215
- 239000012530 fluid Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims description 427
- 230000033001 locomotion Effects 0.000 claims description 107
- 239000011148 porous material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 description 34
- 238000010586 diagram Methods 0.000 description 26
- 239000010408 film Substances 0.000 description 19
- 230000001133 acceleration Effects 0.000 description 17
- 238000005286 illumination Methods 0.000 description 15
- 230000006698 induction Effects 0.000 description 14
- 239000005871 repellent Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000002940 repellent Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000351215 Phenylobacterium mobile Species 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261674078P | 2012-07-20 | 2012-07-20 | |
| US61/674,078 | 2012-07-20 | ||
| US201361790328P | 2013-03-15 | 2013-03-15 | |
| US61/790,328 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201405256A TW201405256A (zh) | 2014-02-01 |
| TWI617894B true TWI617894B (zh) | 2018-03-11 |
Family
ID=48951526
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102125369A TWI617894B (zh) | 2012-07-20 | 2013-07-16 | 液浸構件、曝光裝置、及元件製造方法 |
| TW108108466A TWI700557B (zh) | 2012-07-20 | 2013-07-16 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
| TW106136500A TWI661277B (zh) | 2012-07-20 | 2013-07-16 | 液浸構件、曝光裝置、及元件製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108108466A TWI700557B (zh) | 2012-07-20 | 2013-07-16 | 液浸構件、曝光裝置、曝光方法、元件製造方法、程式、及記錄媒體 |
| TW106136500A TWI661277B (zh) | 2012-07-20 | 2013-07-16 | 液浸構件、曝光裝置、及元件製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US9823580B2 (enExample) |
| EP (1) | EP2875405B1 (enExample) |
| JP (1) | JP6406250B2 (enExample) |
| KR (1) | KR102139033B1 (enExample) |
| CN (2) | CN104487897B (enExample) |
| HK (1) | HK1208914A1 (enExample) |
| TW (3) | TWI617894B (enExample) |
| WO (1) | WO2014014123A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2003226A (en) | 2008-08-19 | 2010-03-09 | Asml Netherlands Bv | Lithographic apparatus, drying device, metrology apparatus and device manufacturing method. |
| US9256137B2 (en) * | 2011-08-25 | 2016-02-09 | Nikon Corporation | Exposure apparatus, liquid holding method, and device manufacturing method |
| NL2009692A (en) | 2011-12-07 | 2013-06-10 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9323160B2 (en) | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9823580B2 (en) * | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| JP6119242B2 (ja) * | 2012-12-27 | 2017-04-26 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| US9720331B2 (en) * | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| WO2015052781A1 (ja) | 2013-10-08 | 2015-04-16 | 株式会社ニコン | 液浸部材、露光装置及び露光方法、並びにデバイス製造方法 |
| US11156921B2 (en) | 2017-12-15 | 2021-10-26 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus, and method of using a fluid handling structure |
| CN112286012A (zh) * | 2020-10-29 | 2021-01-29 | 浙江启尔机电技术有限公司 | 一种浸液回收系统及采用该系统的浸液回收方法 |
Citations (4)
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|---|---|---|---|---|
| US20070291241A1 (en) * | 2006-06-15 | 2007-12-20 | Canon Kabushiki Kaisha | Immersion exposure apparatus |
| US20090231560A1 (en) * | 2008-03-17 | 2009-09-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
| US20090237631A1 (en) * | 2008-03-18 | 2009-09-24 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
| WO2011083724A1 (ja) * | 2010-01-08 | 2011-07-14 | 株式会社ニコン | 液浸部材、露光装置、露光方法、及びデバイス製造方法 |
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| CN1244018C (zh) | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 曝光方法和曝光装置 |
| US6262796B1 (en) | 1997-03-10 | 2001-07-17 | Asm Lithography B.V. | Positioning device having two object holders |
| US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US6452292B1 (en) | 2000-06-26 | 2002-09-17 | Nikon Corporation | Planar motor with linear coil arrays |
| WO2002069049A2 (en) | 2001-02-27 | 2002-09-06 | Asml Us, Inc. | Simultaneous imaging of two reticles |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| EP1788617B1 (en) | 2004-06-09 | 2013-04-10 | Nikon Corporation | Substrate holding device, exposure apparatus having the same and method for producing a device |
| TWI506674B (zh) | 2004-09-17 | 2015-11-01 | 尼康股份有限公司 | Exposure apparatus, exposure method, and device manufacturing method |
| JP4720747B2 (ja) * | 2004-12-02 | 2011-07-13 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| TWI424260B (zh) | 2005-03-18 | 2014-01-21 | 尼康股份有限公司 | A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method |
| TW200644079A (en) * | 2005-03-31 | 2006-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device production method |
| WO2007000704A1 (en) * | 2005-06-29 | 2007-01-04 | Nxp B.V. | Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber |
| US7864292B2 (en) * | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7804577B2 (en) * | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
| US7656501B2 (en) * | 2005-11-16 | 2010-02-02 | Asml Netherlands B.V. | Lithographic apparatus |
| EP1983555B1 (en) | 2006-01-19 | 2014-05-28 | Nikon Corporation | Movable body drive method, movable body drive system, pattern formation method, pattern forming apparatus, exposure method, exposure apparatus and device manufacturing method |
| EP2023378B1 (en) | 2006-05-10 | 2013-03-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| US8004651B2 (en) * | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
| US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| US8068209B2 (en) * | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
| JP2009099939A (ja) * | 2007-09-25 | 2009-05-07 | Dainippon Screen Mfg Co Ltd | アライメントマーク形成装置 |
| US8233139B2 (en) | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
| US20100328637A1 (en) | 2008-12-04 | 2010-12-30 | Nikon Corporation | Exposure apparatus, exposing method and device fabricating method |
| JP2010135794A (ja) | 2008-12-04 | 2010-06-17 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
| US8896806B2 (en) | 2008-12-29 | 2014-11-25 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US9323160B2 (en) * | 2012-04-10 | 2016-04-26 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium |
| US9268231B2 (en) | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9823580B2 (en) * | 2012-07-20 | 2017-11-21 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
| US9494870B2 (en) | 2012-10-12 | 2016-11-15 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9568828B2 (en) | 2012-10-12 | 2017-02-14 | Nikon Corporation | Exposure apparatus, exposing method, device manufacturing method, program, and recording medium |
| US9651873B2 (en) | 2012-12-27 | 2017-05-16 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
| US9720331B2 (en) | 2012-12-27 | 2017-08-01 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium |
-
2013
- 2013-07-12 US US13/940,685 patent/US9823580B2/en active Active
- 2013-07-16 CN CN201380038451.8A patent/CN104487897B/zh active Active
- 2013-07-16 CN CN201710675381.7A patent/CN107422612B/zh active Active
- 2013-07-16 TW TW102125369A patent/TWI617894B/zh active
- 2013-07-16 TW TW108108466A patent/TWI700557B/zh active
- 2013-07-16 WO PCT/JP2013/069959 patent/WO2014014123A1/en not_active Ceased
- 2013-07-16 TW TW106136500A patent/TWI661277B/zh active
- 2013-07-16 HK HK15109495.4A patent/HK1208914A1/xx unknown
- 2013-07-16 EP EP13747704.8A patent/EP2875405B1/en active Active
- 2013-07-16 KR KR1020157003887A patent/KR102139033B1/ko active Active
- 2013-07-16 JP JP2015522464A patent/JP6406250B2/ja active Active
-
2015
- 2015-01-15 US US14/597,536 patent/US10007189B2/en active Active
-
2018
- 2018-06-20 US US16/013,306 patent/US10739683B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070291241A1 (en) * | 2006-06-15 | 2007-12-20 | Canon Kabushiki Kaisha | Immersion exposure apparatus |
| US20090231560A1 (en) * | 2008-03-17 | 2009-09-17 | Nikon Corporation | Immersion lithography apparatus and method having movable liquid diverter between immersion liquid confinement member and substrate |
| US20090237631A1 (en) * | 2008-03-18 | 2009-09-24 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
| WO2011083724A1 (ja) * | 2010-01-08 | 2011-07-14 | 株式会社ニコン | 液浸部材、露光装置、露光方法、及びデバイス製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150124230A1 (en) | 2015-05-07 |
| TWI661277B (zh) | 2019-06-01 |
| CN104487897B (zh) | 2017-08-29 |
| TW201925928A (zh) | 2019-07-01 |
| HK1206435A1 (en) | 2016-01-08 |
| JP6406250B2 (ja) | 2018-10-17 |
| CN107422612A (zh) | 2017-12-01 |
| CN104487897A (zh) | 2015-04-01 |
| EP2875405B1 (en) | 2020-02-26 |
| US9823580B2 (en) | 2017-11-21 |
| CN107422612B (zh) | 2020-05-26 |
| US10007189B2 (en) | 2018-06-26 |
| US20180314166A1 (en) | 2018-11-01 |
| HK1208914A1 (en) | 2016-03-18 |
| KR20150038075A (ko) | 2015-04-08 |
| TW201405256A (zh) | 2014-02-01 |
| TWI700557B (zh) | 2020-08-01 |
| EP2875405A1 (en) | 2015-05-27 |
| US20140022522A1 (en) | 2014-01-23 |
| KR102139033B1 (ko) | 2020-08-11 |
| TW201809910A (zh) | 2018-03-16 |
| US10739683B2 (en) | 2020-08-11 |
| WO2014014123A1 (en) | 2014-01-23 |
| JP2015528132A (ja) | 2015-09-24 |
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