TWI612880B - Undercarriage and portable machine - Google Patents

Undercarriage and portable machine Download PDF

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TWI612880B
TWI612880B TW103144745A TW103144745A TWI612880B TW I612880 B TWI612880 B TW I612880B TW 103144745 A TW103144745 A TW 103144745A TW 103144745 A TW103144745 A TW 103144745A TW I612880 B TWI612880 B TW I612880B
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layer
chassis
thickness
alloy
heat
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TW103144745A
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Chinese (zh)
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TW201542080A (en
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Yoshimitsu Oda
Shinji Yamamoto
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Hitachi Metals Ltd
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets

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  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Laminated Bodies (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Casings For Electric Apparatus (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

底架及攜帶式機器 Undercarriage and portable machine

本發明係關於頗適用於內建有例如會伴隨發熱電子零件的機器之較佳底架(chassis)、及具備有該底架的攜帶式機器。 The present invention relates to a preferred chassis that is suitable for use in a machine having, for example, a heat-generating electronic component, and a portable machine provided with the chassis.

習知攜帶式機器等為保護供顯示影像用的顯示部遭受來自外部衝擊,而有使用底架。例如日本專利特開2006-113589號公報所揭示的顯示裝置,係具備有:面板單元、以及供固定及支撐面板單元用且由SUS構成的底架。 A conventional portable device or the like protects a display portion for displaying an image from an external impact, and a chassis is used. For example, the display device disclosed in Japanese Laid-Open Patent Publication No. 2006-113589 includes a panel unit and a chassis for fixing and supporting the panel unit and made of SUS.

另一方面,近年就攜帶式機器等電子機器期待輕量化。此時,因為SUS的比重較大(比重:約7.8),因而就日本專利特開2006-113589號公報所記載的構成,較難達底架及顯示裝置的輕量化。所以,為求底架的輕量化,便有提案使用比重較小於SUS之Al(比重:約2.7)的底架。此種底架係例如日本專利特開2008-177275號公報所揭示。 On the other hand, in recent years, electronic devices such as portable devices have been expected to be lightweight. At this time, since the SUS has a large specific gravity (specific gravity: about 7.8), it is difficult to reduce the weight of the chassis and the display device in the configuration described in Japanese Laid-Open Patent Publication No. 2006-113589. Therefore, in order to reduce the weight of the chassis, it is proposed to use a chassis having a smaller specific gravity than SUS Al (specific gravity: about 2.7). Such a chassis is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2008-177275.

日本專利特開2008-177275號公報所揭示的行動電話終端,係具備有:顯示器等電子零件、以及構成收納電子零件且在樹脂中嵌入鋁零件而成形的殼體部(底架)。該行動電話終端中,為確保熱傳導之含石墨的散熱片,係黏貼於電子迴路等熱源與殼體部之間。 The mobile phone terminal disclosed in Japanese Laid-Open Patent Publication No. 2008-177275 includes an electronic component such as a display, and a casing portion (a chassis) that is formed by accommodating an electronic component and embedding an aluminum component in the resin. In the mobile phone terminal, a graphite-containing heat sink for ensuring heat conduction is adhered between a heat source such as an electronic circuit and a casing portion.

然而,日本專利特開2008-177275號公報所記載行動 電話終端的殼體部,雖能謀求殼體部的輕量化,但另一方面,因Al的熱傳導性尚嫌不足,而造成從熱源經由散熱片傳導給殼體部之鋁零件的熱,不會充分傳導於鋁零件全體,導致在殼體部中會有無法充分進行散熱的問題。 However, the action described in Japanese Patent Laid-Open Publication No. 2008-177275 Although the casing portion of the telephone terminal can reduce the weight of the casing portion, on the other hand, the heat conductivity of Al is insufficient, and the heat of the aluminum component that is conducted from the heat source to the casing portion via the heat sink is not It is sufficiently conducted to the entire aluminum component, and there is a problem that heat cannot be sufficiently radiated in the casing portion.

本發明係為解決如上述問題而完成,本發明之一目的在於提供:於謀求輕量化的同時,能充分進行散熱的底架、及具備有該底架的攜帶式機器。 The present invention has been made to solve the above problems, and an object of the present invention is to provide a chassis that can sufficiently dissipate heat while achieving weight reduction, and a portable device including the chassis.

根據本發明第1態樣的底架,係由Al層與Cu層相接合的被覆材形成;而,該Al層係由Al或Al合金構成;該Cu層係由Cu或Cu合金構成,且熱傳導率較大於Al層。 A chassis according to a first aspect of the present invention is formed of a cladding material in which an Al layer and a Cu layer are bonded; and the Al layer is composed of Al or an Al alloy; the Cu layer is composed of Cu or a Cu alloy, and The thermal conductivity is larger than the Al layer.

根據本發明第1態樣的底架,如上述,利用由Al層、與熱傳導率較大於Al層的Cu層相接合之被覆材構成,藉由熱傳導率較大於Al層的Cu層,相較於底架僅由Al層形成的情況,可提升底架的熱傳導性。藉此,可將熱迅速傳導於底架全體,所以在底架中可充分地進行散熱。又,藉由使用比重較小的Al層,相較於底架僅由Cu層形成的情況,可達底架的輕量化。又,藉由底架係由Al層與Cu層相接合的被覆材構成,因為Al層與Cu層係直接地接合,因而相較於Al板材與Cu板材經由接著劑間接性接合的情況,即便Al層與Cu層的界面處仍可效率佳地進行熱傳導。藉此,可將熱迅速傳導於底架全體,所以在底架中可充分地進行散熱。 According to the first aspect of the present invention, the chassis is formed of a coating material in which an Al layer and a Cu layer having a thermal conductivity higher than that of the Al layer are bonded, and the thermal conductivity is larger than that of the Cu layer of the Al layer. In the case where the chassis is formed only of the Al layer, the thermal conductivity of the chassis can be improved. Thereby, heat can be quickly conducted to the entire chassis, so that heat can be sufficiently radiated in the chassis. Further, by using the Al layer having a small specific gravity, the weight of the chassis can be reduced as compared with the case where the chassis is formed only of the Cu layer. Further, since the chassis is composed of a coating material in which the Al layer and the Cu layer are joined, since the Al layer and the Cu layer are directly bonded to each other, even when the Al plate and the Cu plate are indirectly joined via the adhesive, even Heat conduction can still be performed efficiently at the interface between the Al layer and the Cu layer. Thereby, heat can be quickly conducted to the entire chassis, so that heat can be sufficiently radiated in the chassis.

另外,本發明中所謂「底架」,係指需要某程度散熱性能與機械強度用途的殼體、箱體、框架、外框等。例如:將供顯示影像用的顯示部予以固定的底架、供保護在攜帶式機器的基板上 所安裝積體電路的底架等,涵蓋供保護攜帶式機器的電子零件用之底架。又,亦涵蓋例如:具有攜帶式機器之框架(frame)機能的底架、具有供電性連接用引線機能的底架、及供阻斷電磁波用的底架等。 Further, the term "undercarriage" as used in the present invention refers to a casing, a casing, a frame, an outer frame, and the like that require a certain degree of heat dissipation performance and mechanical strength. For example, a chassis for fixing a display portion for displaying images, for protection on a substrate of a portable device The chassis of the integrated circuit to be mounted, etc., covers a chassis for protecting electronic components of the portable machine. Further, for example, a chassis having a frame function of a portable device, a chassis having a lead function for power supply connection, and a chassis for blocking electromagnetic waves are also included.

根據上述第1態樣的底架,較佳係Al層由0.2%耐力達200MPa以上的Al合金構成。根據如此構成,因為Al層的機械強度變大,所以可充分確保底架的機械強度。故,可獲得除輕量化及高散熱性能之外,機械強度亦高的底架。 According to the chassis of the first aspect described above, it is preferable that the Al layer is composed of an Al alloy having a 0.2% endurance of 200 MPa or more. According to this configuration, since the mechanical strength of the Al layer is increased, the mechanical strength of the chassis can be sufficiently ensured. Therefore, a chassis having high mechanical strength in addition to light weight and high heat dissipation performance can be obtained.

根據上述第1態樣的底架,較佳Al層的厚度係達Al層與Cu層之合計厚度的60%以上。根據如此構成,因為可增加比重較小的Al層比例,所以可更加達底架的輕量化。 According to the chassis of the first aspect described above, the thickness of the Al layer is preferably 60% or more of the total thickness of the Al layer and the Cu layer. According to this configuration, since the ratio of the Al layer having a small specific gravity can be increased, the weight of the chassis can be further reduced.

根據上述第1態樣的底架,較佳Cu層的厚度係較大於Al層與Cu層之合計厚度的40%。根據如此構成,因為可增加熱傳導率較大於Al層的Cu層比例,所以可更加提高底架的散熱性能。 According to the chassis of the first aspect described above, it is preferable that the thickness of the Cu layer is larger than 40% of the total thickness of the Al layer and the Cu layer. According to this configuration, since the ratio of the Cu layer having a larger thermal conductivity than that of the Al layer can be increased, the heat dissipation performance of the chassis can be further improved.

根據上述第1態樣的底架,較佳Cu層係由Cu構成。根據如此構成,利用由熱傳導率較高於Cu合金的Cu形成Cu層,便可更加提高底架的散熱性能。 According to the chassis of the first aspect described above, it is preferable that the Cu layer is made of Cu. According to this configuration, by forming the Cu layer from Cu having a higher thermal conductivity than the Cu alloy, the heat dissipation performance of the chassis can be further improved.

根據上述第1態樣的底架,較佳係Al層含有:在Cu層其中一表面上接合於Cu層且由Al或Al合金構成的第1Al層、以及在Cu層另一表面上接合於Cu層且由Al或Al合金構成的第2Al層;而,被覆材係具有由第1Al層、Cu層及第2Al層依序積層的3層構造。依此若具有由第1Al層與第2Al層從二側夾置Cu層之3層構造的被覆材,便可抑制因Al層與Cu層間之延展性差異而造成底架發生翹曲情形。此外,藉由被覆材具有由第1Al層與第2Al層夾置Cu層的3層構造,便可抑制耐蝕性差的Cu層表面露出於外 部,俾可提升底架的耐蝕性。 According to the chassis of the first aspect described above, preferably, the Al layer includes: a first Al layer bonded to the Cu layer on one surface of the Cu layer and composed of Al or an Al alloy, and bonded to the other surface of the Cu layer A Cu layer and a second Al layer made of Al or an Al alloy; and the covering material has a three-layer structure in which the first Al layer, the Cu layer, and the second Al layer are sequentially laminated. According to this, if the covering material having the three-layer structure in which the Cu layer is sandwiched between the first Al layer and the second Al layer from both sides is provided, it is possible to suppress the warpage of the chassis due to the difference in ductility between the Al layer and the Cu layer. Further, since the covering material has a three-layer structure in which a Cu layer is interposed between the first Al layer and the second Al layer, it is possible to suppress the surface of the Cu layer having poor corrosion resistance from being exposed. Department, 俾 can improve the corrosion resistance of the chassis.

在上述具有第1Al層、Cu層及第2Al層之3層構造的被覆材構成中,較佳第2Al層的厚度平均值係第1Al層的厚度平均值之95%以上且105%以下。根據此構成,可使底架在厚度方向形成略對稱構造。即,因為第1Al層與第2Al層係由同種(Al系)金屬材料構成、且可形成在±5%以內的略相等厚度,因而可抑制因第1Al層與第2Al層間之板厚差異而造成的翹曲。所以,可更加抑制底架發生翹曲情形。 In the above-described coating material structure having a three-layer structure of the first Al layer, the Cu layer, and the second Al layer, the average thickness of the second Al layer is preferably 95% or more and 105% or less of the average thickness of the first Al layer. According to this configuration, the chassis can be formed in a slightly symmetrical configuration in the thickness direction. In other words, since the first Al layer and the second Al layer are made of the same (Al-based) metal material and can be formed to have a thickness equal to or less than ±5%, the difference in thickness between the first Al layer and the second Al layer can be suppressed. Caused by warping. Therefore, it is possible to further suppress the warpage of the chassis.

在上述具有第1Al層、Cu層及第2Al層之3層構造的被覆材構成中,較佳第1Al層與第2Al層係由具有同一組成的Al合金構成。根據如此構成,因為可使Cu層二側的延展性成為略同,所以可更加抑制底架發生翹曲情形。又,當將第2Al層的厚度平均值設為第1Al層的厚度平均值之95%以上且105%以下時,因為第1Al層與第2Al層係由具有同一組成的Al合金構成,且可設為±5%以內的略相等厚度,所以不需要區分底架的表背面,且可使底架製造過程等中的操作更為容易。 In the above-described coating material structure having a three-layer structure of a first Al layer, a Cu layer, and a second Al layer, it is preferable that the first Al layer and the second Al layer are made of an Al alloy having the same composition. According to this configuration, since the ductility on both sides of the Cu layer can be made almost the same, it is possible to further suppress the warpage of the chassis. In addition, when the average thickness of the second Al layer is 95% or more and 105% or less of the average thickness of the first Al layer, the first Al layer and the second Al layer are made of an Al alloy having the same composition, and It is set to a slightly equal thickness within ±5%, so it is not necessary to distinguish the front and back of the chassis, and the operation in the chassis manufacturing process or the like can be made easier.

在上述具有第1Al層、Cu層及第2Al層之3層構造的被覆材構成中,較佳第1Al層的厚度及第2Al層的厚度合計,係達第1Al層、Cu層及第2Al層的合計厚度之60%以上。根據如此構成,因為可增加比重較小的第1Al層與第2Al層之比例,所以可更加達底架的輕量化。 In the above-described coating material structure having a three-layer structure of a first Al layer, a Cu layer, and a second Al layer, it is preferable that the thickness of the first Al layer and the thickness of the second Al layer are the first Al layer, the Cu layer, and the second Al layer. The total thickness is 60% or more. According to this configuration, since the ratio of the first Al layer to the second Al layer having a small specific gravity can be increased, the weight of the chassis can be further reduced.

在上述具有第1Al層、Cu層及第2Al層之3層構造的被覆材構成中,較佳Cu層的厚度係較大於第1Al層、Cu層及第2Al層的合計厚度之40%。根據如此構成,因為可增加熱傳導率較 大於第1Al層及第2Al層的Cu層比例,所以可更加提高底架的散熱性能。 In the above-described coating material structure having a three-layer structure of the first Al layer, the Cu layer, and the second Al layer, the thickness of the Cu layer is preferably larger than 40% of the total thickness of the first Al layer, the Cu layer, and the second Al layer. According to this configuration, since the thermal conductivity can be increased Since the ratio of the Cu layer is larger than that of the first Al layer and the second Al layer, the heat dissipation performance of the chassis can be further improved.

根據上述第1態樣的底架,較佳Al層係由Al-Mg合金構成。根據如此構成,藉由使用含有比重較小於Al的Mg、且機械強度較高於Al的Al-Mg合金,便可獲得除高散熱化之外,尚更可達輕量化及機械強度的底架。 According to the chassis of the first aspect described above, the Al layer is preferably made of an Al-Mg alloy. According to this configuration, by using an Al-Mg alloy containing Mg having a specific gravity smaller than that of Al and having a higher mechanical strength than Al, it is possible to obtain a chassis which is more lightweight and mechanically strong in addition to high heat dissipation. .

再者,本發明的底架係可使用為內建有會伴隨發熱電子零件的攜帶式機器之底架。藉由針對要求輕量化的攜帶式機器,使用上述本發明能達輕量化的底架,便可利用底架輕量化的份量,達攜帶式機器的輕量化。又,因為來自容易發熱電子零件的熱可經由本發明的底架效率佳地散熱,所以可抑制蓄熱於電子零件中,俾可抑制因蓄熱而造成電子零件發生錯誤動作。又,當底架接觸到會伴隨發熱電子零件的情況,來自電子零件的熱可效率更佳地進行散熱。另外,「電子零件」不僅包括顯示器、積體電路(IC)等利用電力的零件,亦涵蓋電池等供應電力的零件。 Further, the chassis of the present invention can be used as a chassis in which a portable machine that incorporates heat-generating electronic components is built. By using the portable device of the present invention to achieve a lightweight chassis, the lightweight weight of the chassis can be utilized to reduce the weight of the portable device. Moreover, since the heat from the electronic component which is easy to generate heat can be efficiently dissipated through the chassis of the present invention, heat storage in the electronic component can be suppressed, and malfunction of the electronic component due to heat storage can be suppressed. Moreover, when the chassis is in contact with the heat-generating electronic components, the heat from the electronic components can be more efficiently dissipated. In addition, "electronic parts" include not only parts that use electric power such as displays and integrated circuits (ICs), but also parts that supply electric power such as batteries.

根據上述第1態樣的底架,較佳在底架表面至少其中一部分形成由Sn或Sn合金構成的鍍Sn層。根據如此構成,因為當未設有鍍Sn層的底架焊接於支撐部等的情況,會導致焊料中所含的Sn出現異常成長(晶鬚)情形,所以藉由在底架表面至少會參與焊接的一部分處形成鍍Sn層,便可抑制Sn的異常成長。 According to the chassis of the first aspect described above, it is preferable that at least a part of the surface of the chassis forms a Sn-plated layer composed of Sn or a Sn alloy. According to this configuration, when the chassis in which the Sn-plated layer is not provided is soldered to the support portion or the like, abnormal growth (whisker) of Sn contained in the solder is caused, so at least participation is caused on the surface of the chassis. A Sn-plated layer is formed on a part of the solder to suppress abnormal growth of Sn.

根據上述第1態樣的底架,較佳在底架表面至少其中一部分形成由Ni或Ni合金構成的Ni層。根據如此構成,當底架接觸到電氣迴路的情況,藉由使電氣迴路接觸到底架的Ni層,便可抑制底架與電氣迴路間之接觸部分處的電阻(接觸電阻)增加情 形,所以亦可將底架使用為使電氣迴路接地(earth)用的電流迴路。又,因為Ni層的耐蝕性較高,所以可更加提升底架的耐蝕性。 According to the chassis of the first aspect described above, it is preferable that at least a part of the surface of the chassis forms a Ni layer made of Ni or a Ni alloy. According to this configuration, when the chassis is in contact with the electric circuit, by making the electric circuit contact the Ni layer of the chassis, the resistance (contact resistance) at the contact portion between the chassis and the electric circuit can be suppressed. Shape, so the chassis can also be used as a current loop for grounding the electrical circuit. Moreover, since the corrosion resistance of the Ni layer is high, the corrosion resistance of the chassis can be further improved.

根據上述第1態樣的底架,較佳由被覆材構成的底架厚度係0.1mm以上且1.0mm以下。根據如此構成,能在確保作為底架所需的充分機械強度狀態下,可抑制因厚度過大而造成使用底架的機器呈大型化情形。 According to the chassis of the first aspect described above, the thickness of the chassis formed of the covering material is preferably 0.1 mm or more and 1.0 mm or less. According to this configuration, it is possible to suppress an increase in the size of the machine using the undercarriage due to an excessive thickness while ensuring sufficient mechanical strength required for the chassis.

根據上述第1態樣的底架,較佳被覆材係具有Al層與Cu層依序積層的雙層構造。根據如此構成,相較於被覆材係具有第1Al層、Cu層及第2Al層依序積層的3層構造情況下,因為可更靠近會伴隨發熱電子零件等附近配置熱傳導率較大於Al層的Cu層,所以可更加提高底架的散熱性能。 According to the chassis of the first aspect described above, the preferred covering material has a two-layer structure in which the Al layer and the Cu layer are sequentially laminated. According to this configuration, in the case of the three-layer structure in which the first Al layer, the Cu layer, and the second Al layer are sequentially laminated, the thermal conductivity is higher in the vicinity of the heat-generating electronic component or the like than in the Al layer. The Cu layer can improve the heat dissipation performance of the chassis.

根據本發明第2態樣的攜帶式機器,係具備有:會伴隨發熱的電子零件;由Al或Al合金構成的Al層,以及由Cu或Cu合金構成、且與熱傳導率較大於Al層的Cu層相接合之被覆材形成,並釋放出來自電子零件之熱的底架。 A portable device according to a second aspect of the present invention includes: an electronic component that generates heat; an Al layer made of Al or an Al alloy; and an aluminum layer made of Cu or a Cu alloy and having a thermal conductivity higher than that of the Al layer; The Cu layer is joined to the coated material to form a chassis that releases heat from the electronic parts.

根據本發明第2態樣的攜帶式機器,如上述,藉由具備有Al層、以及由與熱傳導率較大於Al層的Cu層相接之被覆材形成的底架,利用熱傳導率較大於Al層的Cu層,相較於底架僅由Al層構成的情況下,可提升底架的熱傳導性。藉此,可將熱迅速傳導於底架全體,所以在底架中可充分地進行散熱。又,藉由使用比重較小的Al層,相較於底架僅於Cu層構成的情況下,可達底架的輕量化。又,藉由底架係由Al層與Cu層相接合的被覆材構成,Al層與Cu層便直接地接合,所以相較於Al板材與Cu板材經由接著劑進行間接式接合情況下,在Al層與Cu層的界面處可效率佳進 行熱傳導。藉此,可將熱迅速傳導於底架全體,所以在底架中可充分地進行散熱。 According to the portable device of the second aspect of the present invention, as described above, the chassis having the Al layer and the covering material which is in contact with the Cu layer having a thermal conductivity higher than that of the Al layer has a larger thermal conductivity than Al. The Cu layer of the layer can improve the thermal conductivity of the chassis as compared with the case where the chassis is composed only of the Al layer. Thereby, heat can be quickly conducted to the entire chassis, so that heat can be sufficiently radiated in the chassis. Further, by using an Al layer having a small specific gravity, the weight of the chassis can be reduced as compared with the case where the chassis is formed only of the Cu layer. Further, since the chassis is composed of a coating material in which the Al layer and the Cu layer are joined, the Al layer and the Cu layer are directly bonded to each other. Therefore, in the case of indirect bonding between the Al plate and the Cu plate via the adhesive, The interface between the Al layer and the Cu layer is more efficient Conduct heat conduction. Thereby, heat can be quickly conducted to the entire chassis, so that heat can be sufficiently radiated in the chassis.

根據上述第2態樣的攜帶式機器,較佳Al層係由0.2%耐力達200MPa以上的Al合金構成。根據如此構成,使用輕量化及高散熱性能之外,機械強度亦高的底架,便可構成攜帶式機器。 According to the portable apparatus of the second aspect described above, it is preferable that the Al layer is composed of an Al alloy having a 0.2% withstand force of 200 MPa or more. According to this configuration, a portable device can be constructed by using a chassis having high mechanical strength and high light weight and high heat dissipation performance.

根據上述第2態樣的攜帶式機器,較佳底架係抵接於會伴隨發熱的電子零件。根據如此構成,藉由抵接於電子零件的底架,便可更確實地釋放出電子零件的熱。 According to the portable device of the second aspect described above, preferably, the chassis is in contact with an electronic component that is accompanied by heat. According to this configuration, by abutting against the chassis of the electronic component, the heat of the electronic component can be more reliably released.

根據上述第2態樣的攜帶式機器,較佳係更進一步具備有:在上面上設置有電子零件的基板、以及依包圍電子零件的方式配置於基板的上面上且抵接於底架的支撐部。根據如此構成,即便具有電子零件未抵接於底架,且利用基板、支撐部及底架將電子零件與外部隔離之構成的攜帶式機器,因為具有高散熱性能的底架係配置於電子零件的附近,因而可在將來自容易發熱電子零件的熱從底架有效率散熱狀態下,能將設有基板的攜帶式機器輕量化。 Preferably, the portable device according to the second aspect of the invention further includes: a substrate on which the electronic component is provided on the upper surface, and a support that is disposed on the upper surface of the substrate and that is in contact with the chassis according to the surrounding electronic component; unit. According to this configuration, even if the portable device in which the electronic component is not in contact with the chassis and the electronic component is separated from the outside by the substrate, the support portion, and the chassis, the chassis having high heat dissipation performance is disposed in the electronic component. In the vicinity of this, it is possible to reduce the weight of the portable device provided with the substrate while efficiently dissipating heat from the easily heat-generating electronic component from the chassis.

1‧‧‧顯示器 1‧‧‧ display

2、202、402‧‧‧底架 2, 202, 402‧‧‧ chassis

3、303、403‧‧‧基板 3, 303, 403‧‧‧ substrate

4、304‧‧‧電池 4, 304‧‧‧ battery

21、221‧‧‧Cu層 21, 221‧‧‧Cu layer

21a‧‧‧Z1側表面 21a‧‧‧Z1 side surface

21b‧‧‧Z2側表面 21b‧‧‧Z2 side surface

22、23、222‧‧‧Al層 22, 23, 222‧‧‧Al layer

31‧‧‧CPU 31‧‧‧CPU

31a‧‧‧加熱器 31a‧‧‧heater

100、300‧‧‧攜帶式機器 100, 300‧‧‧ portable machines

105‧‧‧輥 105‧‧‧roll

121‧‧‧Cu板材 121‧‧‧Cu plate

122、123‧‧‧Al板材 122, 123‧‧‧Al plate

402a、433a‧‧‧鍍Sn層 402a, 433a‧‧‧Sn coating

432‧‧‧焊料 432‧‧‧ solder

433‧‧‧支撐部 433‧‧‧Support

502b‧‧‧Ni層 502b‧‧‧Ni layer

圖1係本發明一實施形態的攜帶式機器之內部構成立體示意圖。 Fig. 1 is a perspective view showing the internal structure of a portable device according to an embodiment of the present invention.

圖2係本發明一實施形態的攜帶式機器之內部構成分解立體示意圖。 Fig. 2 is an exploded perspective view showing the internal structure of a portable device according to an embodiment of the present invention.

圖3係本發明一實施形態的攜帶式機器之底架構造剖視圖。 Fig. 3 is a cross-sectional view showing the structure of a chassis of a portable device according to an embodiment of the present invention.

圖4係本發明一實施形態的攜帶式機器之底架製造程序說明示 意圖。 4 is an explanatory view showing a manufacturing process of a chassis of a portable machine according to an embodiment of the present invention; intention.

圖5係為確認本發明效果而施行的底架及板材之溫度狀態觀察說明示意圖。 Fig. 5 is a schematic view showing the temperature state of the chassis and the sheet which are performed to confirm the effects of the present invention.

圖6係為確認本發明效果而施行的測定結果等之表。 Fig. 6 is a table showing measurement results and the like which are performed to confirm the effects of the present invention.

圖7係為確認本發明效果而施行的實施例之Cu比率、與最高溫度及熱傳導率間之關係圖。 Fig. 7 is a graph showing the relationship between the Cu ratio, the maximum temperature, and the thermal conductivity of the examples which were carried out to confirm the effects of the present invention.

圖8係為確認本發明效果而施行的實施例之Cu比率與比重間之關係圖。 Fig. 8 is a graph showing the relationship between the Cu ratio and the specific gravity of the examples which were carried out to confirm the effects of the present invention.

圖9係本發明一實施形態的第1變化例之底架構造剖視圖。 Fig. 9 is a cross-sectional view showing the structure of a chassis according to a first modification of the embodiment of the present invention.

圖10係本發明一實施形態的第2變化例之攜帶式機器內部構造分解立體示意圖。 Fig. 10 is an exploded perspective view showing the internal structure of a portable device according to a second modification of the embodiment of the present invention.

圖11係本發明一實施形態的第3變化例之底架構造剖視圖。 Figure 11 is a cross-sectional view showing the structure of a chassis according to a third modification of the embodiment of the present invention.

圖12係本發明一實施形態的第4變化例之底架構造剖視圖。 Figure 12 is a cross-sectional view showing the structure of a chassis according to a fourth modification of the embodiment of the present invention.

以下,針對本發明具體化的實施形態,根據圖式進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

首先,參照圖1~圖3,針對本發明一實施形態的攜帶式機器100之內部構成進行說明。 First, the internal configuration of the portable device 100 according to an embodiment of the present invention will be described with reference to Figs. 1 to 3 .

本實施形態的攜帶式機器100,如圖1與圖2所示,從上方(Z1側)起依序配置有:顯示器1、底架2、基板3、及電池4。另外,顯示器1、底架2及基板3俯視形成具有長邊方向約100mm長度L1,且短邊方向約50mm長度L2的略長方形形狀。又,電池4係俯視形成較小於基板3的略長方形形狀。 As shown in FIGS. 1 and 2, the portable device 100 of the present embodiment has the display 1, the chassis 2, the substrate 3, and the battery 4 arranged in this order from the upper side (Z1 side). Further, the display 1, the chassis 2, and the substrate 3 are formed in a substantially rectangular shape having a length L1 of about 100 mm in the longitudinal direction and a length L2 of about 50 mm in the short-side direction. Further, the battery 4 is formed into a substantially rectangular shape smaller than the substrate 3 in plan view.

顯示器1係由液晶顯示器、有機EL顯示器等構成, 具有在Z1側的上面顯示出影像的機能。該顯示器1的Z2側之下面係抵接(接觸)於底架2的Z1側之上面。即,顯示器1係配置於底架2的附近。另外,顯示器1係在顯示影像時會發熱,構成在顯示器1中產生的熱,主要經由底架2釋放出於外部。又,顯示器1係本發明的「電子零件」一例。 The display 1 is composed of a liquid crystal display, an organic EL display, or the like. It has the function of displaying an image on the upper side of the Z1 side. The lower side of the Z2 side of the display 1 abuts (contacts) the upper side of the Z1 side of the chassis 2. That is, the display 1 is disposed in the vicinity of the chassis 2. Further, the display 1 generates heat when displaying an image, and heat generated in the display 1 is mainly released to the outside via the chassis 2. Further, the display 1 is an example of the "electronic component" of the present invention.

底架2係由Z方向上具有約0.2mm厚度t1的略長方形形狀板材構成。該底架2係具有:保護顯示器1受來自外部衝擊的機能、以及將來自顯示器1與CPU31的熱釋放出於外部的機能。電池4係具有對顯示器1、基板3等供應電力的機能。 The chassis 2 is composed of a substantially rectangular plate material having a thickness t1 of about 0.2 mm in the Z direction. The chassis 2 has a function of protecting the display 1 from an external impact and releasing the heat from the display 1 and the CPU 31 to the outside. The battery 4 has a function of supplying electric power to the display 1, the substrate 3, and the like.

再者,基板3的Z1側上面設有執行為控制攜帶式機器100的程式等之CPU31。該CPU31的Z1側上面係抵接(接觸)於底架2的Z2側下面。即,CPU31係配置於底架2的附近。另外,CPU31係因執行為控制攜帶式機器100全體的程式等而發熱,構成在CPU31中產生的熱主要經由底架2釋放出於外部。另外,CPU31係本發明「電子零件」一例。 Further, on the Z1 side of the substrate 3, a CPU 31 that executes a program or the like for controlling the portable device 100 is provided. The upper side of the Z1 side of the CPU 31 abuts (contacts) the lower side of the Z2 side of the chassis 2. That is, the CPU 31 is disposed in the vicinity of the chassis 2. In addition, the CPU 31 generates heat by executing a program or the like for controlling the entire portable device 100, and heat generated in the CPU 31 is mainly released to the outside via the chassis 2. Further, the CPU 31 is an example of the "electronic component" of the present invention.

此處,本實施形態如圖3所示,底架2係由含有Cu層21、Al層22、及Al層23之3層構造(Al層/Cu層/Al層)被覆材構成;該Cu層21係由Cu構成;該Al層22係接合於Cu層21的Z1側表面21a,且由Al-Mg合金構成;該Al層23係接合於Cu層21的Z2側表面21b,且由Al-Mg合金構成。即,底架2係由Al層22、Cu層21及Al層23依序積層的3層構造(Al層/Cu層/Al層)被覆材構成。又,Cu層21、Al層22與23係利用軋延接合而相互牢固地接合。另外,Al層22與23分別係本發明「第1Al層」與「第2Al層」一例。又,表面21a與21b分別係本發明「其中一表面」 及「另一表面」一例。 Here, in the present embodiment, as shown in FIG. 3, the chassis 2 is composed of a three-layer structure (Al layer/Cu layer/Al layer) covering material including a Cu layer 21, an Al layer 22, and an Al layer 23; The layer 21 is made of Cu; the Al layer 22 is bonded to the Z1 side surface 21a of the Cu layer 21, and is composed of an Al-Mg alloy; the Al layer 23 is bonded to the Z2 side surface 21b of the Cu layer 21, and is made of Al. -Mg alloy composition. In other words, the chassis 2 is composed of a three-layer structure (Al layer/Cu layer/Al layer) covering material in which the Al layer 22, the Cu layer 21, and the Al layer 23 are sequentially stacked. Further, the Cu layer 21 and the Al layers 22 and 23 are firmly joined to each other by rolling and bonding. Further, the Al layers 22 and 23 are examples of the "first Al layer" and the "second Al layer" of the present invention, respectively. Moreover, the surfaces 21a and 21b are respectively "one of the surfaces" of the present invention. And an example of "another surface."

Cu層21係由無氧銅、精煉銅及磷脫氧銅等純度99.9%以上的Cu形成。又,Al層22與23係由Al-Mg合金中之A5052(JIS規格)或GM55(UACJ股份有限公司製)構成。又,Al層22與Al層23係由同一組成的Al-Mg合金構成。 The Cu layer 21 is formed of Cu having a purity of 99.9% or more such as oxygen-free copper, refined copper, and phosphorus deoxidized copper. Further, the Al layers 22 and 23 are composed of A5052 (JIS standard) or GM55 (manufactured by UACJ Co., Ltd.) in the Al-Mg alloy. Further, the Al layer 22 and the Al layer 23 are composed of an Al-Mg alloy having the same composition.

再者,構成Cu層21的Cu係具有約390W/(m×K)的熱傳導率、與約8.9的比重。另一方面,構成Al層22與23的Al-Mg合金中,A5052係具有約138W/(m×K)的熱傳導率、與約2.7的比重,GM55係具有約117W/(m×K)的熱傳導率、與約2.7的比重。即,Cu層21係較Al層22與23具有較高熱傳導率、且較大比重。 Further, the Cu system constituting the Cu layer 21 has a thermal conductivity of about 390 W/(m × K) and a specific gravity of about 8.9. On the other hand, in the Al-Mg alloy constituting the Al layers 22 and 23, the A5052 has a thermal conductivity of about 138 W/(m×K) and a specific gravity of about 2.7, and the GM55 has a specific gravity of about 117 W/(m×K). Thermal conductivity, with a specific gravity of about 2.7. That is, the Cu layer 21 has a higher thermal conductivity and a larger specific gravity than the Al layers 22 and 23.

再者,構成Cu層21的Cu係具有約210MPa的0.2%耐力。另一方面,構成Al層22與23的Al-Mg合金中,A5052係具有約270MPa的0.2%耐力,GM55係具有約310MPa的0.2%耐力。即,Al層22與23的0.2%耐力係構成約200MPa以上狀態。另外,為能在底架2約0.2mm薄板化狀態下,可確保機械強度,3層構造被覆材的0.2%耐力越大越佳。 Further, the Cu system constituting the Cu layer 21 has a 0.2% proof stress of about 210 MPa. On the other hand, in the Al-Mg alloy constituting the Al layers 22 and 23, the A5052 has a 0.2% proof stress of about 270 MPa, and the GM55 system has a 0.2% proof force of about 310 MPa. That is, the 0.2% proof of the Al layers 22 and 23 is in a state of about 200 MPa or more. In addition, in order to ensure the mechanical strength in the state in which the chassis 2 is thinned by about 0.2 mm, the 0.2% proof resistance of the three-layer structure covering material is preferably as large as possible.

再者,Cu層21、Al層22及、Al層23分別在Z方向上具有厚度t2、t3及t4。此處,Al層22的厚度t3、與Al層23的厚度t4係略相等。具體而言,Al層23的厚度t4之平均值係構成Al層22的厚度t3之平均值的95%以上且105%以下狀態。此處,Cu層21、Al層22及Al層23的各自界面係有非呈平坦面狀而形成波浪的情況。此種情況,當Al層23的厚度t4之平均值係Al層22的厚度t3之平均值的95%以上且105%以下時,在實際製造時,即便將Al層22的厚度t3與Al層23的厚度t4視為略相同進行操 作仍不會有問題。 Further, the Cu layer 21, the Al layer 22, and the Al layer 23 have thicknesses t2, t3, and t4, respectively, in the Z direction. Here, the thickness t3 of the Al layer 22 is slightly equal to the thickness t4 of the Al layer 23. Specifically, the average value of the thickness t4 of the Al layer 23 is in a state of 95% or more and 105% or less of the average value of the thickness t3 of the Al layer 22. Here, the respective interfaces of the Cu layer 21, the Al layer 22, and the Al layer 23 are not formed into a flat surface and are formed into waves. In this case, when the average value of the thickness t4 of the Al layer 23 is 95% or more and 105% or less of the average value of the thickness t3 of the Al layer 22, even in the actual production, even if the thickness t3 of the Al layer 22 is different from the Al layer. The thickness t4 of 23 is regarded as slightly the same There will still be no problems with this.

再者,本實施形態,當底架2的輕量化或高散熱性能中,較重視底架2的高散熱性能情況,相對於Cu層21、Al層22及Al層23的合計厚度(底架2的厚度)t1(=t2+t3+t4)之下,較佳係Cu層21的厚度t2較大於40%。又,當重視底架2的輕量化時,則底架2的厚度t1相對於Al層22與23的合計厚度(=t3+t4)較佳係達60%以上。即,相對於底架2的厚度t1,Al層22的厚度t3與Al層23的厚度t4最好均達30%以上。 Furthermore, in the present embodiment, in the weight reduction or high heat dissipation performance of the chassis 2, the high heat dissipation performance of the chassis 2 is emphasized, and the total thickness of the Cu layer 21, the Al layer 22, and the Al layer 23 (the chassis) Below the thickness of 2) t1 (= t2 + t3 + t4), it is preferable that the thickness t2 of the Cu layer 21 is larger than 40%. Further, when the weight of the chassis 2 is emphasized, the thickness t1 of the chassis 2 is preferably 60% or more with respect to the total thickness (= t3 + t4) of the Al layers 22 and 23. That is, the thickness t3 of the Al layer 22 and the thickness t4 of the Al layer 23 are preferably both 30% or more with respect to the thickness t1 of the chassis 2.

再者,當重視底架2的輕量化情況,底架2的比重最好大約在5以下。 Furthermore, when the weight of the chassis 2 is emphasized, the specific gravity of the chassis 2 is preferably about 5 or less.

再者,本實施形態,在底架2的表面上均無任何配置。即,底架2的表面並沒有配置為散熱用的石墨片。藉此,可抑制當接著石墨片時,因氣泡侵入於片材與底架2之間而造成熱傳導性降低情形,且可削減接著薄石墨片的步驟。 Further, in the present embodiment, there is no arrangement on the surface of the chassis 2. That is, the surface of the chassis 2 is not disposed as a graphite sheet for heat dissipation. Thereby, when the graphite sheet is continued, the thermal conductivity is lowered due to the intrusion of air bubbles between the sheet and the chassis 2, and the step of continuing the thin graphite sheet can be reduced.

其次,參照圖1、圖3及圖4,針對本發明一實施形態的底架2之製造程序進行說明。 Next, a manufacturing procedure of the underframe 2 according to an embodiment of the present invention will be described with reference to Figs. 1, 3, and 4.

首先,如圖4所示,準備:由Cu構成的Cu板材121,以及由A5052或GM55中之任一Al-Mg合金構成的Al板材122與Al板材123。此時,Al板材122的厚度與Al板材123的厚度係設為略相同,且Cu板材121的厚度、Al板材122的厚度、及Al板材123的厚度係配合所製成底架2的性質(輕量化及高散熱性能)進行調節。具體而言,當底架2重視高散熱性能的情況,便將Cu板材121的厚度設為較大於Cu板材121、Al板材122及123的合計厚度40%。又,當底架2重視輕量化的情況,便將Al板材122的 厚度與Al板材123的厚度分別設為Cu板材121、Al板材122及Al板材123的合計厚度之30%以上。 First, as shown in FIG. 4, a Cu plate 121 made of Cu and an Al plate 122 and an Al plate 123 made of any of A5052 or GM55 are prepared. At this time, the thickness of the Al plate 122 is slightly the same as the thickness of the Al plate 123, and the thickness of the Cu plate 121, the thickness of the Al plate 122, and the thickness of the Al plate 123 match the properties of the chassis 2 ( Lightweight and high heat dissipation performance). Specifically, when the chassis 2 emphasizes high heat dissipation performance, the thickness of the Cu plate 121 is made larger than the total thickness of the Cu plate 121 and the Al plates 122 and 123 by 40%. Moreover, when the chassis 2 is focused on weight reduction, the Al plate 122 is The thickness and the thickness of the Al plate member 123 are each 30% or more of the total thickness of the Cu plate 121, the Al plate 122, and the Al plate 123.

再者,在Al板材122與Al板材123之間配置Cu板材121的狀態下,使用輥105依約60%軋縮率連續式施行軋延接合。藉此連續式形成具有約0.4mm厚度、且由Al層22、Cu層21及Al層23依序積層的被覆材102。 In the state in which the Cu plate 121 is disposed between the Al plate 122 and the Al plate 123, the roll 105 is continuously rolled at a rolling reduction ratio of about 60%. Thereby, the covering material 102 having a thickness of about 0.4 mm and sequentially laminated by the Al layer 22, the Cu layer 21, and the Al layer 23 is formed.

然後,在約500℃還原環境下,使被覆材102進行約1分鐘的擴散退火。然後,將被覆材102施行連續式軋延直到成為約0.24mm為止。然後,在約500℃還原環境下,被覆材102再度進行約1分鐘的擴散退火後,依既定軋縮率施行連續性軋延。藉此,連續式形成具有約0.2mm厚度t1(參照圖3)的被覆材102。此時,藉由在Cu層21的表面21a與21b上,分別接合由具有同一組成的Al-Mg合金構成、且厚度略同等的Al層22與23,便可抑制被覆材102的翹曲情形。 Then, the covering material 102 was subjected to diffusion annealing for about 1 minute in a reducing environment of about 500 °C. Then, the covering material 102 is continuously rolled until it becomes about 0.24 mm. Then, in a reducing environment of about 500 ° C, the covering material 102 is again subjected to diffusion annealing for about 1 minute, and then continuous rolling is performed at a predetermined rolling reduction ratio. Thereby, the covering material 102 having a thickness t1 (refer to FIG. 3) of about 0.2 mm is continuously formed. At this time, by bonding the Al layers 22 and 23 which are composed of Al-Mg alloys having the same composition and having the same thickness on the surfaces 21a and 21b of the Cu layer 21, the warpage of the covering material 102 can be suppressed. .

然後,如圖1所示,藉由將被覆材102(參照圖4)打穿成為長邊方向具有約100mm長度L1、且短邊方向具有約50mm長度L2的略長方形形狀,便製得底架2。另外,底架2係利用衝壓加工等加工成為既定形狀。 Then, as shown in FIG. 1, the cover member 102 (see FIG. 4) is formed into a substantially rectangular shape having a length L1 of about 100 mm in the longitudinal direction and a length L2 of about 50 mm in the short-side direction, thereby producing a chassis. 2. Further, the chassis 2 is processed into a predetermined shape by press working or the like.

本實施形態係可獲得如下述效果。 In the present embodiment, the following effects can be obtained.

本實施形態,如上述,底架2係由:具有熱傳導率較高於Al層22與23的Cu層21、由Al-Mg合金構成的Al層22、以及由Al-Mg合金構成的Al層23相接合之3層構造(Al/Cu/Al)被覆材構成。藉此,利用熱傳導率較大於Al層22與23的Cu層21,相較於底架2僅由Al層構成的情況下,可提升底架2的熱傳導性。 藉此,因為可將熱迅速地傳導於底架2全體,因而在底架2中可充分地進行散熱。又,藉由使用比重較小的Al層22與23,相較於底架2僅由Cu層21構成的情況下,可達底架2的輕量化。又,藉由底架2係由Cu層21、Al層22及Al層23相接合的被覆材構成,因為Al層22與23、及Cu層21係直接地接合,所以相較於Al板材與Cu板材經由接著劑進行間接式接合的情況下,即便在Al層22與23、及Cu層21的界面處仍可效率佳地進行熱傳導。藉此,因為可將熱迅速地傳導於底架2全體,所以在底架2中可充分地進行散熱。 In the present embodiment, as described above, the chassis 2 is composed of a Cu layer 21 having a thermal conductivity higher than that of the Al layers 22 and 23, an Al layer 22 composed of an Al-Mg alloy, and an Al layer composed of an Al-Mg alloy. It consists of a 23-layer bonded 3-layer structure (Al/Cu/Al) cladding material. Thereby, the thermal conductivity of the chassis 2 can be improved by using the Cu layer 21 having a thermal conductivity higher than that of the Al layers 22 and 23, compared to the case where the chassis 2 is composed only of the Al layer. Thereby, since heat can be quickly conducted to the entire chassis 2, heat can be sufficiently radiated in the chassis 2. Further, by using the Al layers 22 and 23 having a small specific gravity, the chassis 2 can be made lighter than when the chassis 2 is composed only of the Cu layer 21. Further, the chassis 2 is composed of a cladding material in which the Cu layer 21, the Al layer 22, and the Al layer 23 are joined, and since the Al layers 22 and 23 and the Cu layer 21 are directly bonded to each other, compared with the Al plate and In the case where the Cu plate material is indirectly joined via the adhesive, heat conduction can be performed efficiently even at the interface between the Al layers 22 and 23 and the Cu layer 21. Thereby, since heat can be quickly conducted to the entire chassis 2, heat can be sufficiently radiated in the chassis 2.

再者,本實施形態,因為藉由Al層22與23係由0.2%耐力達200MPa以上的Al-Mg合金構成,而提高Al層22與23的機械強度,所以充分確保底架2的機械強度。故,可獲得除輕量化及高散熱性能外,機械強度亦高的底架2。 Further, in the present embodiment, since the Al layers 22 and 23 are composed of an Al-Mg alloy having a 0.2% proof resistance of 200 MPa or more, the mechanical strength of the Al layers 22 and 23 is improved, so that the mechanical strength of the chassis 2 is sufficiently ensured. . Therefore, the chassis 2 having high mechanical strength in addition to light weight and high heat dissipation performance can be obtained.

再者,本實施形態,當重視底架2的輕量化情況,相對於Cu層21、Al層22及Al層23的合計厚度(底架2的厚度)t1,藉由將Al層22與23的合計厚度(=t3+t4)設為達60%以上,便可充分增加比重較小Al層22與23的比例,所以可更加達底架2的輕量化。 Further, in the present embodiment, when the weight of the chassis 2 is emphasized, the Al layer 22 and 23 are formed with respect to the total thickness of the Cu layer 21, the Al layer 22, and the Al layer 23 (thickness of the chassis 2) t1. When the total thickness (= t3 + t4) is set to 60% or more, the ratio of the Al layers 22 and 23 having a small specific gravity can be sufficiently increased, so that the weight of the chassis 2 can be further reduced.

再者,本實施形態,當重視底架2之高散熱性能的情況,相對於Cu層21、Al層22及Al層23的合計厚度(底架2的厚度)t1,藉由將Cu層21的厚度t2設為較大於40%,便可充分增加熱傳導率較大於Al層22與23的Cu層21比例,所以可更加提高底架2的散熱性能。 Further, in the present embodiment, when the high heat dissipation performance of the chassis 2 is emphasized, the Cu layer 21 is formed by the total thickness (thickness of the chassis 2) t1 of the Cu layer 21, the Al layer 22, and the Al layer 23. When the thickness t2 is set to be larger than 40%, the ratio of the thermal conductivity higher than that of the Cu layers 21 of the Al layers 22 and 23 can be sufficiently increased, so that the heat dissipation performance of the chassis 2 can be further improved.

再者,本實施形態,藉由底架2的Cu層21係由Cu 構成,一般Cu的熱傳導率係較高於Cu合金,而藉由Cu構成Cu層21,便可更加提高底架2的散熱性能。 Furthermore, in the present embodiment, the Cu layer 21 of the chassis 2 is made of Cu. In general, the thermal conductivity of Cu is higher than that of the Cu alloy, and the Cu layer 21 is formed of Cu, so that the heat dissipation performance of the chassis 2 can be further improved.

再者,本實施形態,底架2係由含有:由Cu構成的Cu層21、接合於Cu層21的Z1側表面21a且由Al-Mg合金構成的Al層22、以及接合於Cu層21的Z2側表面21b且由Al-Mg合金構成的Al層23之3層構造(Al層/Cu層/Al層)被覆材構成。藉此,藉由被覆材具有利用Al層22與Al層23從二側夾置Cu層21的3層構造,便可抑制因Al層22與23、及Cu層21間之延展性差異,而造成底架2發生翹曲情形。又,藉由被覆材係具有由Al層22與Al層23從二側夾置Cu層21的3層構造,便可抑制耐蝕性差的Cu層21之表面21a及21b露出於外部,所以可提升底架2的耐蝕性。 Further, in the present embodiment, the chassis 2 includes a Cu layer 21 made of Cu, an Al layer 22 made of an Al-Mg alloy bonded to the Z1 side surface 21a of the Cu layer 21, and bonded to the Cu layer 21. The Z2 side surface 21b is composed of a three-layer structure (Al layer/Cu layer/Al layer) of the Al layer 23 composed of an Al-Mg alloy. By the three-layer structure in which the Cu layer 21 is sandwiched between the Al layer 22 and the Al layer 23 by the Al layer 22 and the Al layer 23, the difference in ductility between the Al layers 22 and 23 and the Cu layer 21 can be suppressed. Causes the chassis 2 to warp. In addition, since the covering material has a three-layer structure in which the Cu layer 21 is interposed between the Al layer 22 and the Al layer 23, the surfaces 21a and 21b of the Cu layer 21 having poor corrosion resistance can be prevented from being exposed to the outside, so that the coating can be lifted. The corrosion resistance of the chassis 2.

再者,本實施形態,由同一組成(A5052或GM55)形成的Al層22與Al層23,係設為厚度(t3及t4)略相同。即,Al層23的厚度t4之平均值設定為Al層22厚度t3的平均值之95%以上且105%以下。藉此,可使底架2在厚度方向(Z方向)形成略對稱的構造。即,因為Al層22與Al層23係由具有同一組成的Al-Mg合金構成,且可設為±5%以內略相等厚度,所以不需要區分底架2的表背面,且可使在底架2製造過程等中的操作更為容易。又,藉由將厚度(t3與t4)設為略相同,便可抑制因Al層22與Al層23間之板厚差異而造成翹曲情形,所以能更加抑制底架2發生翹曲情形。 Further, in the present embodiment, the Al layer 22 and the Al layer 23 formed of the same composition (A5052 or GM55) are slightly the same in thickness (t3 and t4). That is, the average value of the thickness t4 of the Al layer 23 is set to 95% or more and 105% or less of the average value of the thickness t3 of the Al layer 22. Thereby, the chassis 2 can be formed in a slightly symmetrical configuration in the thickness direction (Z direction). That is, since the Al layer 22 and the Al layer 23 are composed of an Al-Mg alloy having the same composition and can be set to a thickness equal to or less within ±5%, it is not necessary to distinguish the front and back surfaces of the chassis 2, and it is possible to The operation in the manufacturing process of the rack 2 and the like is easier. Further, by setting the thicknesses (t3 and t4) to be slightly the same, it is possible to suppress the warpage caused by the difference in the thickness between the Al layer 22 and the Al layer 23, so that the warpage of the chassis 2 can be further suppressed.

再者,本實施形態,藉由Al層22與23係由含有比重較小於Al的Mg、且機械強度較高於Al的A5052或GM55之Al-Mg合金構成,便可獲得除高散熱化外,更能達輕量化及機械強度的底架2。 Further, in the present embodiment, the Al layers 22 and 23 are composed of an Al-Mg alloy containing A5052 or GM55 having a specific gravity smaller than that of Al and having a higher mechanical strength than Al, thereby achieving high heat dissipation. In addition, the chassis 2 is more lightweight and mechanically strong.

再者,本實施形態,如圖1所示,藉由將顯示器1、CPU31配置於具有高散熱性能的底架2附近,便可將來自顯示器1、CPU31的熱,有效地從底架2進行散熱。又,藉由使顯示器1、CPU31抵接於具有高散熱性能的底架2,便可將來自顯示器1、CPU31的熱,更有效率地從底架2進行散熱。藉此,可抑制在顯示器1、CPU31中囤積熱,所以能抑制因熱而造成顯示器1、CPU31出現錯誤動作。 Further, in the present embodiment, as shown in FIG. 1, the heat from the display 1 and the CPU 31 can be efficiently carried out from the chassis 2 by arranging the display 1 and the CPU 31 in the vicinity of the chassis 2 having high heat dissipation performance. Cooling. Further, by bringing the display 1 and the CPU 31 into contact with the chassis 2 having high heat dissipation performance, heat from the display 1 and the CPU 31 can be more efficiently dissipated from the chassis 2 by heat. Thereby, it is possible to suppress the accumulation of heat in the display 1 and the CPU 31, so that it is possible to suppress an erroneous operation of the display 1 and the CPU 31 due to heat.

再者,本實施形態,藉由將由被覆材構成的底架2之厚度t1設為約0.2mm,便可在確保作為底架2用的充分機械強度狀態下,抑制因厚度t1過大而導致使用底架2的攜帶式機器100呈大型化情形。 Further, in the present embodiment, by setting the thickness t1 of the chassis 2 made of the covering material to about 0.2 mm, it is possible to suppress the use of the thickness t1 excessively while ensuring sufficient mechanical strength for the chassis 2. The portable machine 100 of the chassis 2 is in a large size.

再者,本實施形態,攜帶式機器100係構成會伴隨發熱的顯示器1之Z2側下面,抵接(接觸)於底架2的Z1側上面,且伴隨發熱的CPU31之Z1側上面,抵接(接觸)於底架2的Z2側下面。藉此,利用抵接於顯示器1及CPU31的底架2,便可更確實地將顯示器1及CPU31的熱釋放出。 Further, in the present embodiment, the portable device 100 is configured such that the Z2 side underside of the display 1 that generates heat is abutted (contacted) on the Z1 side of the chassis 2, and the Z1 side of the CPU 31 that is accompanied by heat is abutted. (Contact) under the Z2 side of the chassis 2. Thereby, the heat of the display 1 and the CPU 31 can be more reliably released by the chassis 2 that is in contact with the display 1 and the CPU 31.

(實施例) (Example)

其次,參照圖2、圖3、圖5~圖8,針對為確認本發明效果而施行的散熱性能測定與機械強度測定進行說明。另外,在無特別聲明之前提下,「厚度」與「板厚」係指平均值。 Next, the heat dissipation performance measurement and the mechanical strength measurement performed to confirm the effects of the present invention will be described with reference to Figs. 2, 3, and 5 to 8. In addition, "thickness" and "thickness" refer to the average value unless otherwise stated.

本實施例中,使用圖3所示上述實施形態的底架2。具體而言,實施例1~4係具備有:由Cu構成的Cu層21、以及由.Al-Mg合金中之A5052構成的Al層22與23,且由Al層22、Cu 層21及Al層23依序積層的被覆材。此時,實施例1~4中,將平板狀被覆材(底架2)的厚度t1(=t2+t3+t4、總板厚)設為0.2mm,且將Al層22的厚度t3與Al層23的厚度t4設為相同。然後,藉由將平板狀被覆材如圖5所示,設為在長邊方向(X方向)具有100mm長度L1、且在短邊方向(Y方向)具有50mm長度L2的略長方形形狀,便製得實施例1~4的底架2。 In the present embodiment, the chassis 2 of the above embodiment shown in Fig. 3 is used. Specifically, Examples 1 to 4 include a Cu layer 21 made of Cu and Al layers 22 and 23 made of A5052 in an .Al-Mg alloy, and an Al layer 22 and Cu. The layer 21 and the Al layer 23 are sequentially laminated with a covering material. At this time, in the examples 1 to 4, the thickness t1 (= t2 + t3 + t4, total thickness) of the flat coating material (the underframe 2) was set to 0.2 mm, and the thickness t3 of the Al layer 22 was made to be Al. The thickness t4 of the layer 23 is set to be the same. Then, as shown in FIG. 5, the flat-shaped covering material has a substantially rectangular shape having a length L1 of 100 mm in the longitudinal direction (X direction) and a length L2 of 50 mm in the short-side direction (Y direction). The chassis 2 of the embodiments 1 to 4 was obtained.

此處,如圖6所示,實施例1~4係將構成底架2的Al層22、Cu層21及Al層23的厚度比率(t3:t2:t4),分別設為1:2:1、1:1:1、2:1:2、及4.5:1:4.5。即,將Cu層21的厚度t2相對於底架2的厚度t1之比率(Cu比率)分別設為50%、33%、20%及10%。又,將Al層22與Al層23的合計厚度(=t3+t4)相對於底架2的厚度t1之比率(Al比率),分別設為50%、67%、80%及90%。 Here, as shown in FIG. 6, in Examples 1 to 4, the thickness ratio (t3: t2: t4) of the Al layer 22, the Cu layer 21, and the Al layer 23 constituting the chassis 2 is set to 1:2: 1, 1:1: 1, 2:1:2, and 4.5:1:4.5. That is, the ratio (Cu ratio) of the thickness t2 of the Cu layer 21 to the thickness t1 of the chassis 2 is set to 50%, 33%, 20%, and 10%, respectively. Moreover, the ratio (Al ratio) of the total thickness (=t3+t4) of the Al layer 22 and the Al layer 23 with respect to the thickness t1 of the chassis 2 was 50%, 67%, 80%, and 90%, respectively.

再者,比較例1係使用由具有0.2mm厚度的Cu單體構成之平板狀板材。又,比較例2係使用具有0.2mm厚度的A5052單體構成之平板狀板材。另外,比較例1與2的板材亦是與實施例1~4的底架2同樣,形成長邊方向具有100mm長度L1、短邊方向具有50mm長度L2的略長方形形狀。 Further, in Comparative Example 1, a flat plate material composed of a Cu monomer having a thickness of 0.2 mm was used. Further, in Comparative Example 2, a flat plate material made of A5052 monomer having a thickness of 0.2 mm was used. Further, in the same manner as the chassis 2 of the first to fourth embodiments, the plates of Comparative Examples 1 and 2 have a substantially rectangular shape having a length L1 of 100 mm in the longitudinal direction and a length L2 of 50 mm in the short side direction.

再者,使用比較例1及2(Cu及A5052)的比重及熱傳導率,從Cu層21、Al層22及Al層23的厚度比率,分別求取實施例1~4的底架2之比重及熱傳導率。 Further, using the specific gravity and thermal conductivity of Comparative Examples 1 and 2 (Cu and A5052), the specific gravity of the chassis 2 of Examples 1 to 4 was determined from the thickness ratios of the Cu layer 21, the Al layer 22, and the Al layer 23, respectively. And thermal conductivity.

(散熱性能) (heat dissipation performance)

散熱性能的評價中,針對實施例1~4的底架2、與比較例1及2的板材,觀察當在表面上配置發熱源時的溫度分佈。具體而言, 如圖5所示,將本實施形態發熱源的CPU31(參照圖2)所對應加熱器31a,黏貼於底架2及板材的Z2側下面上。該加熱器31a係在X方向及Y方向上具有10mm長度L3。 In the evaluation of the heat dissipation performance, with respect to the chassis 2 of Examples 1 to 4 and the plates of Comparative Examples 1 and 2, the temperature distribution when the heat source was placed on the surface was observed. in particular, As shown in Fig. 5, the heater 31a corresponding to the CPU 31 (see Fig. 2) of the heat source of the present embodiment is adhered to the lower surface of the chassis 2 and the Z2 side of the board. The heater 31a has a length L3 of 10 mm in the X direction and the Y direction.

然後,對加熱器31a供應1W電力而將加熱器31a予以加熱。然後,使用紅外線熱像儀裝置從上方(Z1側)觀察經5分鐘後的底架2及板材之溫度分佈。然後,測定底架2及板材中成為溫度最高地方的溫度,並將該測定值設為最高溫度。 Then, 1 W of electric power is supplied to the heater 31a to heat the heater 31a. Then, the temperature distribution of the chassis 2 and the sheet material after 5 minutes was observed from the upper side (Z1 side) using an infrared camera apparatus. Then, the temperature at the highest temperature in the chassis 2 and the sheet material was measured, and the measured value was set to the highest temperature.

圖6及圖7所示散熱性能的結果,實施例1~4的底架2係隨Cu比率的增加(Al比率變小),最高溫度隨之降低。此現象可認為藉由增加高熱傳導率Cu(390W/(m×K))的比例,而提升底架2的散熱性能,結果導致最高溫度降低的緣故所致。 As a result of the heat dissipation performance shown in Figs. 6 and 7, the chassis 2 of the embodiments 1 to 4 increased in accordance with the Cu ratio (the Al ratio became smaller), and the maximum temperature was lowered. This phenomenon is considered to increase the heat dissipation performance of the chassis 2 by increasing the ratio of the high thermal conductivity Cu (390 W / (m × K)), resulting in a decrease in the maximum temperature.

特別係Cu比率大於40%的實施例1(50%),最高溫度成為43.8℃,呈現低於44℃。藉此,可確認實施例1的底架2能有效率提高散熱性能。又,由圖7所示圖中可確認到當Cu比率大於40%的情況,可將使高溫度成為44.5℃以下,能充分提高散熱性能。 In particular, Example 1 (50%) having a Cu ratio of more than 40%, the maximum temperature was 43.8 ° C, and it was lower than 44 ° C. Thereby, it was confirmed that the chassis 2 of the first embodiment can efficiently improve the heat dissipation performance. Further, it can be confirmed from the graph shown in Fig. 7 that when the Cu ratio is more than 40%, the high temperature can be made 44.5 ° C or lower, and the heat dissipation performance can be sufficiently improved.

再者,實施例1~4的底架2,可確認到隨Cu比率增加(Al比率變小),熱傳導率亦隨之變大。由此現象可確認到藉由增加Cu比率,便可充分提高散熱性能。 Further, in the chassis 2 of Examples 1 to 4, it was confirmed that the Cu ratio increased (the Al ratio became small), and the thermal conductivity also increased. From this phenomenon, it was confirmed that the heat dissipation performance can be sufficiently improved by increasing the Cu ratio.

(比重) (proportion)

由圖6及圖8所示比重得知,實施例1~4的底架2,隨Cu比率變小(Al比率變大),比重亦隨之變小。特別係Cu比率在40%以下的實施例2(33%)、3(20%)及4(10%),確認到比重均小於5。藉此可確認到實施例2~4的底架2能有效地達輕量化。又,由圖8所示 圖中得知,Cu比率在40%以下(Al比率達60%以上)的情況,可使比重在5以下,可確認到能充分達輕量化。 As is apparent from the specific gravity shown in Figs. 6 and 8, the chassis 2 of the first to fourth embodiments has a smaller specific gravity as the Cu ratio becomes smaller (the Al ratio becomes larger). In particular, in Examples 2 (33%), 3 (20%), and 4 (10%) having a Cu ratio of 40% or less, it was confirmed that the specific gravity was less than 5. From this, it was confirmed that the chassis 2 of the embodiments 2 to 4 can be effectively reduced in weight. Also, as shown in Figure 8 As shown in the figure, when the Cu ratio is 40% or less (the Al ratio is 60% or more), the specific gravity can be made 5 or less, and it can be confirmed that the weight can be sufficiently reduced.

(機械強度) (Mechanical strength)

再者,為進行機械強度的評價,針對實施例1~4的底架2與比較例1及2的板材,測定應力-應變圖(stress-strain diagram),求取生成0.2%永久應變(permanent strain)時的應力(0.2%耐力)。 Further, in order to evaluate the mechanical strength, the stress-strain diagrams of the chassis 2 of Examples 1 to 4 and the plates of Comparative Examples 1 and 2 were measured to obtain a 0.2% permanent strain (permanent). Stress at strain) (0.2% endurance).

圖6所示結果得知,實施例1~4的底架2,隨Cu比率變小(Al比率變大),0.2%耐力亦隨之變大。此現象可認為構成Al層22與23的A5052,相較於構成Cu層21的Cu,0.2%耐力較大的緣故所致。另外,將底架2薄板化為0.1mm以上且0.3mm以下的情況,底架2的0.2%耐力達200MPa以上,能確保作為底架時的充分機械強度,故屬較佳。由此現象可認為實施例1~4的底架2即便薄板化至0.1mm以上且0.3mm以下,仍可確保充分的機械強度。 As shown in the results of Fig. 6, it was found that the chassis 2 of Examples 1 to 4 became smaller as the Cu ratio became smaller (the Al ratio became larger), and the 0.2% endurance also became larger. This phenomenon is considered to be caused by the fact that A5052 constituting the Al layers 22 and 23 is larger than 0.2% of the Cu constituting the Cu layer 21. Further, when the chassis 2 is thinned to 0.1 mm or more and 0.3 mm or less, the 0.2% proof force of the chassis 2 is 200 MPa or more, and it is preferable to ensure sufficient mechanical strength as a chassis. From this phenomenon, it is considered that the chassis 2 of the first to fourth embodiments can ensure sufficient mechanical strength even when the thickness is reduced to 0.1 mm or more and 0.3 mm or less.

從上述散熱性能、比重及機械強度的評價得知,隨Cu比率變大,能提升散熱性能,另一方面則比重會變大。又,藉由使用由Cu構成的Cu層、與由達200MPa以上的Al-Mg合金(A5052)所構成一對Al層,便可使機械強度達200MPa以上。其中,得知當重視高散熱性能的情況,藉由將Cu比率設為大於40%,便可充分提高底架的散熱性能,當重視輕量化的情況,藉由將Al比率設為60%以上,便可充分達底架的輕量化。又,Cu比率在40%(Al比率60%)或其附近比率的底架,判斷高散熱性能、低比重、及高機械強度均能充分滿足。 From the evaluation of the above heat dissipation performance, specific gravity, and mechanical strength, it is known that as the Cu ratio increases, the heat dissipation performance can be improved, and on the other hand, the specific gravity becomes large. Further, by using a Cu layer composed of Cu and a pair of Al layers composed of an Al-Mg alloy (A5052) of 200 MPa or more, the mechanical strength can be made 200 MPa or more. In addition, it is known that when the high heat dissipation performance is emphasized, the heat dissipation performance of the chassis can be sufficiently improved by setting the Cu ratio to more than 40%, and the Al ratio is set to 60% or more when weight reduction is emphasized. , can fully achieve the weight of the chassis. Further, the chassis having a Cu ratio of 40% (Al ratio of 60%) or its vicinity can be sufficiently satisfied by high heat dissipation performance, low specific gravity, and high mechanical strength.

另外,本次所揭示實施形態及實施例均全部僅止於例示而已,並應認為係屬限制。本發明範圍並非上述實施形態及實施例的說明,而是依申請專利範圍所示,又舉凡與申請專利範圍具均等含義、及範圍內的所有變更均涵蓋在內。 In addition, the embodiments and examples disclosed herein are all illustrative only and should be considered as limiting. The scope of the present invention is not intended to be limited by the description of the embodiments and the embodiments, but the scope of the claims and the scope of the claims and the scope of the claims.

例如,上述實施形態,底架2係例示由Al層22、Cu層21及Al層23依序積層的3層構造被覆材(Al層/Cu層/Al層)構成例,惟本發明並不僅侷限於此。如本發明圖9所示上述實施形態的第1變化例,底架202亦可由含有:由Cu構成的Cu層221、以及接合於Cu層221的Z1側表面221a且由Al-Mg合金構成的Al層222之雙層構造(Al層/Cu層)被覆材構成,此情況,最好在產生較多熱之一側(例如CPU側)配置高熱傳導率Cu層221。藉此,相較於被覆材係具有由Al層22、Cu層21及Al層23依序積層的3層構造情況(上述實施形態),能更靠近會伴隨發熱電子零件(顯示器、CPU等)配置熱傳導率較大於Al層222的Cu層221,所以可更加提高底架202的散熱性能。又,當重視底架202的高散熱性能情況,相對於Cu層221與Al層222的合計厚度(底架202的厚度)t1(=t2+t3),Cu層221的厚度t2最好大於40%。又,當重視底架202的輕量化情況,相對於底架202的厚度t1,Al層222的厚度t3最好達60%以上。又,底架亦可達4層構造以上的被覆材。此時,被覆材最好主要由Al層與Cu層構成的被覆材。 For example, in the above-described embodiment, the chassis 2 is exemplified by a three-layer structural covering material (Al layer/Cu layer/Al layer) which is sequentially laminated by the Al layer 22, the Cu layer 21, and the Al layer 23, but the present invention is not limited to Limited to this. According to the first modification of the above-described embodiment shown in FIG. 9 of the present invention, the chassis 202 may include a Cu layer 221 made of Cu and a Z1 side surface 221a bonded to the Cu layer 221 and made of an Al-Mg alloy. The double layer structure (Al layer/Cu layer) of the Al layer 222 is composed of a cladding material. In this case, it is preferable to arrange the high thermal conductivity Cu layer 221 on one side (for example, the CPU side) where a large amount of heat is generated. Thereby, compared with the case where the covering material has a three-layer structure in which the Al layer 22, the Cu layer 21, and the Al layer 23 are sequentially stacked (the above-described embodiment), it is possible to bring the electronic components (display, CPU, etc.) closer together. The thermal conductivity is configured to be larger than the Cu layer 221 of the Al layer 222, so that the heat dissipation performance of the chassis 202 can be further improved. Moreover, when the high heat dissipation performance of the chassis 202 is emphasized, the thickness t2 of the Cu layer 221 is preferably greater than 40 with respect to the total thickness of the Cu layer 221 and the Al layer 222 (thickness of the chassis 202) t1 (= t2 + t3). %. Further, when the weight of the chassis 202 is emphasized, the thickness t3 of the Al layer 222 is preferably 60% or more with respect to the thickness t1 of the chassis 202. Further, the chassis can also have a coating material of four or more layers. In this case, the covering material is preferably a covering material mainly composed of an Al layer and a Cu layer.

再者,上述實施形態在圖1中所例示係將電池4配置於基板3的Z2側下面側之例,惟本發明並不僅侷限於此。本發明亦可如圖10所示上述實施形態的第2變化例之攜帶式機器300,依短邊方向(Y方向)與基板303呈相鄰狀態配置電池304,且CPU31 與電池304一起抵接於底架2。藉此,不僅來自顯示器1、CPU31的熱,就連來自電池304的熱亦能從底架2效率佳地釋放出。另外,電池304係本發明「電子零件」一例。 In the above embodiment, the battery 4 is disposed on the lower side of the Z2 side of the substrate 3 as exemplified in FIG. 1, but the present invention is not limited thereto. According to the present invention, as shown in FIG. 10, the portable device 300 according to the second modification of the above-described embodiment may be configured such that the battery 304 is disposed adjacent to the substrate 303 in the short-side direction (Y direction), and the CPU 31 is provided. Abutting the chassis 2 together with the battery 304. Thereby, not only the heat from the display 1, the CPU 31, but also the heat from the battery 304 can be efficiently released from the chassis 2. Further, the battery 304 is an example of the "electronic component" of the present invention.

再者,上述實施形態在圖1中所例示係使CPU31的Z1側上面抵接於底架2的Z2側下面例,惟本發明並不僅侷限於此。本發明亦可使CPU未抵接於底架。例如圖11所示上述實施形態的第3變化例,在基板403的上面(Z1側之一面),使用焊料432接合包圍CPU31的框狀支撐部433。然後,亦可依使由3層構造被覆材構成的蓋狀底架402之下面(Z2側之一面),抵接於支撐部433的上面方式,將底架402固定於支撐部433上。藉此,即便具有CPU31未抵接於底架402,且CPU31利用基板403、支撐部433及底架402而與外部呈隔離狀態的行動終端(未圖示),因為具有高散熱性能的底架402配置於CPU31的附近,因而能在有效率地將來自容易發熱CPU31的熱從底架402散熱狀態下,達設有基板403的行動終端之輕量化。 In the above embodiment, the Z1 side of the CPU 31 is abutted on the Z2 side of the chassis 2, and the present invention is not limited thereto. The invention can also make the CPU not abut against the chassis. For example, in the third modification of the above-described embodiment shown in FIG. 11, the frame-shaped support portion 433 surrounding the CPU 31 is joined by solder 432 on the upper surface (one surface on the Z1 side) of the substrate 403. Then, the bottom frame 402 may be fixed to the support portion 433 by abutting against the upper surface (one surface on the Z2 side) of the lid-shaped chassis 402 formed of the three-layer structure covering material against the upper surface of the support portion 433. Therefore, even if the CPU 31 is not in contact with the chassis 402, and the CPU 31 is separated from the outside by the substrate 403, the support portion 433, and the chassis 402, the mobile terminal (not shown) has a high heat dissipation performance. Since the 402 is disposed in the vicinity of the CPU 31, it is possible to reduce the weight of the mobile terminal provided with the substrate 403 while efficiently dissipating heat from the heat generating CPU 31 from the chassis 402.

此情況,如圖11所示,最好在底架402的表面上形成鍍Sn層402a。又,最好在支撐部433的表面上形成鍍Sn層433a。底架402對支撐部433的安裝係可利用機械式的螺絲或鉚接進行,但若微小零件的安裝則大多利用未圖示的焊接實施。當將未設有鍍Sn層的底架焊接於支撐部等的情況時,會有焊料中所含的Sn出現異常成長(晶鬚)情形。所以,最好針對底架402至少會參與焊接的部分,預先形成鍍Sn層402a。該鍍Sn層402a係可形成於在形成底架402形狀之前的被覆材表面上,亦可形成於經形成底架402形狀後的底架402之表面上。另外,若考慮生產性、電鍍形成所需要 的工具(tooling)等,最好在形成底架402的形狀後,才於底架402的表背面(雙面)略全面上形成鍍Sn層402a。另外,鍍Sn係可使用由Sn或Sn合金構成者,更佳係由純度99%以上的Sn構成者。 In this case, as shown in FIG. 11, it is preferable to form the Sn-plated layer 402a on the surface of the chassis 402. Further, it is preferable to form the Sn-plated layer 433a on the surface of the support portion 433. The attachment of the chassis 402 to the support portion 433 can be performed by mechanical screws or caulking, but the mounting of the minute components is often performed by welding (not shown). When the chassis in which the Sn-plated layer is not provided is soldered to the support portion or the like, there is a case where abnormal growth (whiskers) of Sn contained in the solder occurs. Therefore, it is preferable to form the Sn-plated layer 402a in advance for the portion where the chassis 402 is at least involved in soldering. The Sn-plated layer 402a may be formed on the surface of the covering material before forming the shape of the chassis 402, or may be formed on the surface of the chassis 402 formed in the shape of the chassis 402. In addition, if it is necessary to consider productivity and electroplating formation Preferably, after forming the shape of the chassis 402, the Sn-plated layer 402a is formed on the front and back sides (double-sided sides) of the chassis 402. Further, the Sn-plated layer may be made of Sn or a Sn alloy, and more preferably made of Sn having a purity of 99% or more.

再者,上述實施形態係例示底架2設置於具備有顯示器1的攜帶式機器100之例,惟本發明並不僅侷限於此。例如亦可將底架設置於未設有顯示器的能攜帶式路由器等。此情況,可將來自路由器的電池、來自CPU的熱,利用底架效率佳地釋放出。又,亦可將底架使用於固定式小型機器。又,亦可將底架使用為SSD(Solid State Drive,固態硬碟)的殼體。 Furthermore, the above embodiment is an example in which the chassis 2 is provided in the portable device 100 including the display 1, but the present invention is not limited thereto. For example, the chassis can be placed on a portable router that does not have a display. In this case, the battery from the router and the heat from the CPU can be efficiently released using the chassis. Alternatively, the chassis can be used in a stationary small machine. Alternatively, the chassis can be used as a housing of an SSD (Solid State Drive).

再者,上述實施形態係例示底架2的厚度t1大約0.2mm的例子,惟本發明並不僅侷限於此。本發明中,底架的厚度亦可小於0.2mm、亦可大於0.2mm。另外,若底架的厚度大約0.1mm以上便較能確保作為底架時的充分機械強度,故屬較佳。又,若底架的厚度大約在1.0mm以下,則可抑制因厚度過大而造成使用底架的機器大型化情形,故屬較佳。另外,相較於如攜帶式機器之類非常重視小型化的情況下,比較不重視小型化的SSD所使用底架,亦可將底架的厚度設定為大約0.6mm以上且1.0mm以下。此情況,即便將0.2%耐力較小的Al(Al000系)使用為構成本發明Al層的金屬材料,但因為底架厚度較大,因而可充分確保機械強度。 Further, the above embodiment is an example in which the thickness t1 of the chassis 2 is about 0.2 mm, but the present invention is not limited thereto. In the present invention, the thickness of the chassis may also be less than 0.2 mm or more than 0.2 mm. Further, if the thickness of the chassis is about 0.1 mm or more, it is preferable to ensure sufficient mechanical strength as a chassis. Further, when the thickness of the chassis is about 1.0 mm or less, it is possible to suppress an increase in the size of the machine using the chassis due to an excessive thickness. Further, in the case where the miniaturization is highly emphasized as in a portable type of machine, the thickness of the chassis can be set to be approximately 0.6 mm or more and 1.0 mm or less, without paying attention to the chassis used for the miniaturized SSD. In this case, even if Al (Al000 type) having a low 0.2% proof stress is used as the metal material constituting the Al layer of the present invention, since the thickness of the chassis is large, the mechanical strength can be sufficiently ensured.

再者,上述實施形態係例示容易發熱的電子零件為使用顯示器1及CPU31的例子,而上述第2變化例係例示容易發熱的電子零件為使用顯示器1、CPU31及電池304的例子,惟本發明並不僅侷限於此。本發明中容易發熱的電子零件亦可使用例如電源迴路等電子零件。 In the above embodiment, the electronic component that is likely to generate heat is exemplified by the use of the display 1 and the CPU 31, and the second variation is exemplified by the use of the display 1, the CPU 31, and the battery 304. Not limited to this. In the electronic component which is likely to generate heat in the present invention, electronic components such as a power supply circuit can be used.

再者,上述實施形態係例示使用1個由3層被覆材構成的底架2之例子,惟本發明並不僅侷限於此。本發明中,為將供顯示影像用的顯示部予以固定之底架、以及為保護基板中所安裝積體電路用的底架等,由被覆材構成的底架用構件,亦可使用複數個構成攜帶式機器。 Further, the above embodiment is an example in which one chassis 2 composed of three layers of covering materials is used, but the present invention is not limited thereto. In the present invention, the chassis for fixing the display portion for displaying images and the chassis for the integrated circuit to be mounted on the protective substrate, etc., the plurality of members for the chassis formed of the covering material may be used. Form a portable machine.

再者,上述實施形態係例示Al層22(第1Al層)與Al層23(第2Al層)均由同一Al-Mg合金構成的例子,惟本發明並不僅侷限於此。本發明中,第1Al層及第2Al層亦可由不同的Al或Al合金構成。 In the above embodiment, the Al layer 22 (first Al layer) and the Al layer 23 (second Al layer) are both formed of the same Al-Mg alloy, but the invention is not limited thereto. In the present invention, the first Al layer and the second Al layer may be composed of different Al or Al alloys.

再者,上述實施形態係例示Al層22(第1Al層)與Al層23(第2Al層)均由A5052或GM55構成的例子,惟本發明並不僅侷限於此。本發明中,第1Al層及第2Al層亦可由A5052及GM55以外的Al或Al合金構成。例如第1Al層及第2Al層係由Al-Mg合金(A5000系)、A606l等Al-Mg-Si合金(A6000系)、或A2219等Al-Cu合金(A2000系)構成時,利用板材製作時的適當處理(硬質化處理等)便可將0.2%耐力成為約200MPa以上,因而能確保作為底架時的機械強度,故屬較佳。又,當依照使用環境等而不需特別要求機械強度的情況,第1Al層及第2Al層亦可由0.2%耐力小於約200MPa的Al(Al000系)、Al合金構成。 In the above embodiment, the example in which the Al layer 22 (first Al layer) and the Al layer 23 (second Al layer) are both composed of A5052 or GM55 is exemplified, but the present invention is not limited thereto. In the present invention, the first Al layer and the second Al layer may be composed of Al or an Al alloy other than A5052 and GM55. For example, when the first Al layer and the second Al layer are composed of an Al-Mg alloy (A5000 system), an Al-Mg-Si alloy (A6000 system) such as A6061, or an Al-Cu alloy (A2000 system) such as A2219, when the sheet material is used. The appropriate treatment (hardening treatment, etc.) can achieve a 0.2% proof force of about 200 MPa or more, and thus it is preferable to ensure mechanical strength as a chassis. Further, when the mechanical strength is not particularly required depending on the use environment or the like, the first Al layer and the second Al layer may be composed of Al (Al000-based) or Al alloy having a 0.2% proof stress of less than about 200 MPa.

再者,上述實施形態係例示Cu層21由純度99.9%以上的Cu形成之例子,惟本發明並不僅侷限於此。本發明中,Cu層亦可由Cu-2.30Fe-0.10Zn-0.03P構成的C19400(CDA規格)等,Cu純度約97%以上的Cu合金形成。因為該等Cu合金的機械強度較高於上述Cu,所以能更加提升底架的機械強度。 In the above embodiment, the Cu layer 21 is exemplified by Cu having a purity of 99.9% or more, but the present invention is not limited thereto. In the present invention, the Cu layer may be formed of a Cu alloy having a Cu purity of about 97% or more, such as C19400 (CDA specification) composed of Cu-2.30Fe-0.10Zn-0.03P. Since the mechanical strength of the Cu alloy is higher than that of the above Cu, the mechanical strength of the chassis can be further improved.

再者,上述實施形態係例示在底架2的表面上沒有任何配置的例子,惟本發明並不僅侷限於此。本發明中,亦可在底架表面上形成供熱傳導用的Cu箔層,亦可在底架表面上形成供接著顯示器用的熱傳導性接著片材、供傳熱用的石墨片等片材。若具有此種構成的底架,則具有高散熱性能的薄板底架,可認為能更加提高市場有用性。又,上述片材係只要在底架表面上,至少形成於會與攜帶式機器之電子零件相接觸的位置處便可。又,如圖12所示上述實施形態的第4變化例,亦可在底架2的表面(上下雙面)形成Ni層502b。另外,該Ni層502b係可利用電鍍形成,亦可當作被覆材而與底架2一體形成。藉此,可抑制底架2與未圖示電氣迴路間之相接觸部分處的電阻(接觸電阻)增加,所以亦可將底架2使用為使電氣迴路成為接地(earth)用的電流迴路。又,利用Ni層502b亦可提升底架2的耐蝕性。另外,構成Ni層502b的金屬材料係可使用由Ni、或Ni-P合金等Ni合金構成者。又,Ni層502b係只要在底架2的表面上,至少形成於會與攜帶式機器之電子零件相接觸的位置處便可,亦可僅設置於上下雙面中之任一面。 Furthermore, the above embodiment exemplifies an example in which no arrangement is made on the surface of the chassis 2, but the present invention is not limited thereto. In the present invention, a Cu foil layer for heat conduction may be formed on the surface of the chassis, or a sheet such as a heat conductive adhesive sheet for a display and a graphite sheet for heat transfer may be formed on the surface of the chassis. According to the chassis having such a configuration, a thin-plate chassis having high heat dissipation performance can be considered to further enhance market usefulness. Further, the sheet may be formed at least at a position to be in contact with the electronic component of the portable device as long as it is on the surface of the chassis. Further, as shown in the fourth modification of the above embodiment, as shown in Fig. 12, the Ni layer 502b may be formed on the surface (upper and lower surfaces) of the chassis 2. Further, the Ni layer 502b may be formed by plating or may be formed integrally with the chassis 2 as a covering material. Thereby, the increase in the electric resistance (contact resistance) at the portion where the chassis 2 and the electric circuit (not shown) are in contact with each other can be suppressed. Therefore, the chassis 2 can be used as a current circuit for making the electric circuit an earth. Moreover, the corrosion resistance of the chassis 2 can also be improved by the Ni layer 502b. Further, the metal material constituting the Ni layer 502b can be made of a Ni alloy such as Ni or a Ni-P alloy. Further, the Ni layer 502b may be formed at least at a position where it contacts the electronic component of the portable device as long as it is on the surface of the chassis 2, or may be provided only on either of the upper and lower surfaces.

再者,上述實施形態係例示CPU31的Z1側上面抵接於底架2的Z2側下面之例子,惟本發明並不僅侷限於此。本發明中,CPU與底架亦可經由熱傳導性接著劑進行接著,亦可經由其他構件配置CPU與底架。 In the above embodiment, the example in which the upper surface of the Z1 side of the CPU 31 abuts on the lower side of the Z2 side of the chassis 2 is exemplified, but the present invention is not limited thereto. In the present invention, the CPU and the chassis may be followed by a thermally conductive adhesive, or the CPU and the chassis may be disposed via other members.

2‧‧‧底架 2‧‧‧ Chassis

21‧‧‧Cu層 21‧‧‧Cu layer

21a‧‧‧Z1側表面 21a‧‧‧Z1 side surface

21b‧‧‧Z2側表面 21b‧‧‧Z2 side surface

22、23‧‧‧Al層 22, 23‧‧‧Al layer

Claims (20)

一種底架,係由使Al層與Cu層相接合的被覆材所構成;該Al層係由Al或Al合金構成;該Cu層係由Cu或Cu合金構成,且熱傳導率較大於上述Al層;上述Al層係含有:在上述Cu層其中一表面上接合於上述Cu層且由Al或Al合金構成的第1Al層、以及在上述Cu層另一表面上接合於上述Cu層且由Al或Al合金構成的第2Al層。 A chassis consisting of a cladding material that joins an Al layer and a Cu layer; the Al layer is composed of Al or an Al alloy; the Cu layer is composed of Cu or a Cu alloy, and the thermal conductivity is larger than the Al layer. The Al layer includes: a first Al layer bonded to the Cu layer on one surface of the Cu layer and composed of Al or an Al alloy, and a Cu layer bonded to the Cu layer on the other surface of the Cu layer and composed of Al or A second Al layer composed of an Al alloy. 如申請專利範圍第1項之底架,其中,上述Al層係由0.2%耐力達200MPa以上的Al合金構成。 The underframe of claim 1, wherein the Al layer is composed of an Al alloy having a 0.2% endurance of 200 MPa or more. 如申請專利範圍第1或2項之底架,其中,上述Al層的厚度係達上述Al層與上述Cu層之合計厚度的60%以上。 The underframe of claim 1 or 2, wherein the thickness of the Al layer is 60% or more of a total thickness of the Al layer and the Cu layer. 如申請專利範圍第1或2項之底架,其中,上述Cu層的厚度係較大於上述Al層與上述Cu層之合計厚度的40%。 The underframe of claim 1 or 2, wherein the thickness of the Cu layer is greater than 40% of the total thickness of the Al layer and the Cu layer. 如申請專利範圍第1或2項之底架,其中,上述Cu層係由Cu構成。 The underframe of claim 1 or 2, wherein the Cu layer is composed of Cu. 如申請專利範圍第1或2項之底架,其中,上述被覆材係具有由上述第1Al層、上述Cu層及上述第2Al層依序積層的3層構造。 The underframe according to claim 1 or 2, wherein the covering material has a three-layer structure in which the first Al layer, the Cu layer, and the second Al layer are sequentially laminated. 如申請專利範圍第6項之底架,其中,上述第2Al層的厚度平均值係上述第1Al層的厚度平均值之95%以上且105%以下。 The underframe of the sixth aspect of the invention, wherein the average thickness of the second Al layer is 95% or more and 105% or less of the average thickness of the first Al layer. 如申請專利範圍第6項之底架,其中,上述第1Al層與上述第2Al層係由具有同一組成的Al合金構成。 The underframe of claim 6, wherein the first Al layer and the second Al layer are made of an Al alloy having the same composition. 如申請專利範圍第6項之底架,其中,上述第1Al層的厚度及上述第2Al層的厚度合計,係達上述第1Al層、上述Cu層及上述第2Al層的合計厚度之60%以上。 The underframe of the sixth aspect of the invention, wherein the thickness of the first Al layer and the thickness of the second Al layer are 60% or more of a total thickness of the first Al layer, the Cu layer, and the second Al layer. . 如申請專利範圍第6項之底架,其中,上述Cu層的厚度係較大於上述第1Al層、上述Cu層及上述第2Al層的合計厚度之40%。 The underframe of claim 6, wherein the thickness of the Cu layer is greater than 40% of a total thickness of the first Al layer, the Cu layer, and the second Al layer. 如申請專利範圍第1或2項之底架,其中,上述Al層係由Al-Mg合金構成。 The underframe of claim 1 or 2, wherein the Al layer is composed of an Al-Mg alloy. 如申請專利範圍第1或2項之底架,其中,可使用為內建有會伴隨發熱電子零件的攜帶式機器之底架。 For example, the chassis of claim 1 or 2 can be used as a chassis in which a portable machine with built-in heat-generating electronic components is built. 如申請專利範圍第1或2項之底架,其中,在上述底架表面至少其中一部分形成由Sn或Sn合金構成的鍍Sn層。 A chassis according to claim 1 or 2, wherein at least a part of the surface of the chassis is formed with a Sn-plated layer made of Sn or a Sn alloy. 如申請專利範圍第1或2項之底架,其中,在上述底架表面至少其中一部分形成由Ni或Ni合金構成的Ni層。 A chassis according to claim 1 or 2, wherein at least a part of the surface of the chassis is formed with a Ni layer made of Ni or a Ni alloy. 如申請專利範圍第1或2項之底架,其中,上述被覆材構成的上述底架厚度係0.1mm以上且1.0mm以下。 The underframe according to claim 1 or 2, wherein the thickness of the chassis formed of the covering material is 0.1 mm or more and 1.0 mm or less. 如申請專利範圍第1或2項之底架,其中,上述被覆材係具有上述Al層與上述Cu層依序積層的雙層構造。 The underframe according to claim 1 or 2, wherein the covering material has a two-layer structure in which the Al layer and the Cu layer are sequentially laminated. 一種攜帶式機器,係具備有:會伴隨發熱之電子零件;以及底架,其乃使由Al或Al合金構成的Al層、以及由Cu或Cu合金構成且與熱傳導率較大於Al層的Cu層相接合之被覆材所形成,並釋放出來自上述電子零件之熱;上述Al層係含有:在上述Cu層其中一表面上接合於上述Cu層且由Al或Al合金構成的第1Al層、以及在上述Cu層另一表面上接合於上述Cu層且由Al或Al合金構成的第2Al層。 A portable machine comprising: an electronic component that is accompanied by heat generation; and a chassis that is an Al layer composed of Al or an Al alloy, and Cu composed of Cu or a Cu alloy and having a thermal conductivity greater than that of the Al layer Forming a layer-bonded covering material and releasing heat from the electronic component; the Al layer comprising: a first Al layer bonded to the Cu layer on one surface of the Cu layer and composed of Al or an Al alloy, And a second Al layer bonded to the Cu layer on the other surface of the Cu layer and made of Al or an Al alloy. 如申請專利範圍第17項之攜帶式機器,其中,上述底架的上述Al層係由0.2%耐力達200MPa以上的Al合金構成。 The portable machine of claim 17, wherein the Al layer of the chassis is made of an Al alloy having a 0.2% endurance of 200 MPa or more. 如申請專利範圍第17或18項之攜帶式機器,其中,上述底架係抵接於會伴隨發熱的上述電子零件。 The portable device of claim 17 or 18, wherein the chassis is abutted against the electronic component that is accompanied by heat. 如申請專利範圍第17或18項之攜帶式機器,其中,更進一步具備有:基板,係於其上面上設置有上述電子零件;以及支撐部,其乃依包圍上述電子零件的方式配置於上述基板的上面上且抵接於上述底架。 The portable device of claim 17 or 18, further comprising: a substrate on which the electronic component is provided; and a support portion disposed on the substrate so as to surround the electronic component The upper surface is abutted against the above-mentioned chassis.
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