TWI611613B - 有機發光裝置及該裝置的製造方法 - Google Patents
有機發光裝置及該裝置的製造方法 Download PDFInfo
- Publication number
- TWI611613B TWI611613B TW104118314A TW104118314A TWI611613B TW I611613 B TWI611613 B TW I611613B TW 104118314 A TW104118314 A TW 104118314A TW 104118314 A TW104118314 A TW 104118314A TW I611613 B TWI611613 B TW I611613B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- upper electrode
- organic compound
- compound layer
- emitting device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 210
- 239000000758 substrate Substances 0.000 claims abstract description 164
- 238000000034 method Methods 0.000 claims description 85
- 238000000059 patterning Methods 0.000 claims description 30
- 238000007789 sealing Methods 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 24
- 238000000206 photolithography Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 11
- 230000010365 information processing Effects 0.000 claims description 4
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- 238000009751 slip forming Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 643
- 239000010408 film Substances 0.000 description 193
- 239000000463 material Substances 0.000 description 72
- 239000000470 constituent Substances 0.000 description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
- 239000011229 interlayer Substances 0.000 description 30
- 230000015572 biosynthetic process Effects 0.000 description 29
- 238000000926 separation method Methods 0.000 description 26
- 229910052581 Si3N4 Inorganic materials 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 25
- 238000001312 dry etching Methods 0.000 description 24
- 238000002347 injection Methods 0.000 description 22
- 239000007924 injection Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000007769 metal material Substances 0.000 description 18
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 18
- 238000001579 optical reflectometry Methods 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 14
- 239000004020 conductor Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 230000032258 transport Effects 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 238000001771 vacuum deposition Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000003086 colorant Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000012776 electronic material Substances 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229920003169 water-soluble polymer Polymers 0.000 description 3
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229940125898 compound 5 Drugs 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
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- 230000001681 protective effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001958 silver carbonate Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014124481 | 2014-06-17 | ||
| JP2014-124481 | 2014-06-17 | ||
| JP2014124480 | 2014-06-17 | ||
| JP2014-124480 | 2014-06-17 | ||
| JP2015-075000 | 2015-04-01 | ||
| JP2015075000A JP6594013B2 (ja) | 2014-06-17 | 2015-04-01 | 有機発光装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201601364A TW201601364A (zh) | 2016-01-01 |
| TWI611613B true TWI611613B (zh) | 2018-01-11 |
Family
ID=54836916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104118314A TWI611613B (zh) | 2014-06-17 | 2015-06-05 | 有機發光裝置及該裝置的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20150364716A1 (enExample) |
| JP (1) | JP6594013B2 (enExample) |
| CN (1) | CN105321980B (enExample) |
| TW (1) | TWI611613B (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102491880B1 (ko) * | 2016-06-16 | 2023-01-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR102762586B1 (ko) * | 2016-12-07 | 2025-02-05 | 엘지디스플레이 주식회사 | 유기발광소자를 이용한 조명장치 및 그 제조방법 |
| KR102606282B1 (ko) | 2017-06-19 | 2023-11-27 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| JP6935915B2 (ja) * | 2017-10-27 | 2021-09-15 | 株式会社Ｊｏｌｅｄ | 電子デバイス |
| US11107876B2 (en) | 2018-04-26 | 2021-08-31 | Sakai Display Products Corporation | Organic electroluminescent device and method for producing same |
| US11587981B2 (en) * | 2018-05-11 | 2023-02-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device including a semi-transmissive layer |
| JP7458164B2 (ja) * | 2019-10-23 | 2024-03-29 | 株式会社ジャパンディスプレイ | 半導体装置 |
| JP7109492B2 (ja) * | 2020-02-18 | 2022-07-29 | 堺ディスプレイプロダクト株式会社 | 有機ｅｌデバイスの製造方法 |
| JPWO2021201144A1 (enExample) | 2020-03-31 | 2021-10-07 | ||
| JPWO2022009803A1 (enExample) | 2020-07-10 | 2022-01-13 | ||
| WO2022239576A1 (ja) | 2021-05-11 | 2022-11-17 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置及び電子機器 |
| CN113725390B (zh) * | 2021-08-30 | 2024-07-12 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
| US20230200198A1 (en) * | 2021-12-20 | 2023-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and method for manufacturing the light-emitting element |
| JP2023179001A (ja) * | 2022-06-07 | 2023-12-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| CN119546055A (zh) * | 2023-08-30 | 2025-02-28 | 佳能株式会社 | Oled芯片、曝光头、图像形成设备以及制造oled芯片的方法 |
| JP2025036100A (ja) * | 2023-08-30 | 2025-03-14 | キヤノン株式会社 | Ｌｅｄチップ、露光ヘッド、画像形成装置、およびｌｅｄチップの製造方法 |
| WO2025182421A1 (ja) * | 2024-02-27 | 2025-09-04 | 日産化学株式会社 | 発光表示デバイスの製造方法 |
| FR3160854A1 (fr) * | 2024-03-29 | 2025-10-03 | Microoled | Dispositif électroluminescent à matrice active et haute résolution |
| WO2025202981A1 (fr) * | 2024-03-29 | 2025-10-02 | Microoled | Dispositif électroluminescent à matrice active et haute résolution |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201314884A (zh) * | 2011-09-30 | 2013-04-01 | Canon Kk | 製造有機發光裝置之方法 |
| TWI396466B (zh) * | 2007-08-29 | 2013-05-11 | Hitachi Displays Ltd | 有機ｅｌ顯示裝置 |
| TWI399125B (zh) * | 2008-03-18 | 2013-06-11 | Samsung Display Co Ltd | 有機發光裝置及包含該裝置的有機發光顯示設備 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3948082B2 (ja) * | 1997-11-05 | 2007-07-25 | カシオ計算機株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
| JP3839276B2 (ja) * | 2000-09-25 | 2006-11-01 | 大日本印刷株式会社 | エレクトロルミネッセント素子の製造方法 |
| TW522577B (en) * | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
| US6717181B2 (en) * | 2001-02-22 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Luminescent device having thin film transistor |
| JP2006004743A (ja) * | 2004-06-17 | 2006-01-05 | Toshiba Matsushita Display Technology Co Ltd | 表示装置及びその製造方法 |
| JP4816365B2 (ja) * | 2006-09-25 | 2011-11-16 | 大日本印刷株式会社 | 有機エレクトロルミネッセンス素子およびその製造方法 |
| JP2012014856A (ja) * | 2010-06-29 | 2012-01-19 | Sumitomo Chemical Co Ltd | 表示装置 |
| JP6168742B2 (ja) * | 2011-09-02 | 2017-07-26 | キヤノン株式会社 | 有機ｅｌ装置 |
| JP2013033714A (ja) * | 2012-03-23 | 2013-02-14 | Pioneer Electronic Corp | 照明装置の温度調整方法 |
| JP2013258020A (ja) * | 2012-06-12 | 2013-12-26 | Canon Inc | 有機ｅｌ表示装置の製造方法 |
| WO2013190982A1 (ja) * | 2012-06-19 | 2013-12-27 | 株式会社 日立製作所 | 有機発光層材料、有機発光層材料を用いた有機発光層形成用塗液、有機発光層形成用塗液を用いた有機発光素子、有機発光素子を用いた光源装置、およびそれらの製造方法 |
| JP2014073965A (ja) * | 2012-10-02 | 2014-04-24 | Canon Inc | 新規ベンゾインドロカルバゾール化合物、これを有する有機発光素子、表示装置、画像情報処理装置、照明装置、画像形成装置 |
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2015
- 2015-04-01 JP JP2015075000A patent/JP6594013B2/ja active Active
- 2015-06-05 TW TW104118314A patent/TWI611613B/zh active
- 2015-06-09 US US14/734,567 patent/US20150364716A1/en not_active Abandoned
- 2015-06-17 CN CN201510336507.9A patent/CN105321980B/zh active Active
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| TWI396466B (zh) * | 2007-08-29 | 2013-05-11 | Hitachi Displays Ltd | 有機ｅｌ顯示裝置 |
| TWI399125B (zh) * | 2008-03-18 | 2013-06-11 | Samsung Display Co Ltd | 有機發光裝置及包含該裝置的有機發光顯示設備 |
| TW201314884A (zh) * | 2011-09-30 | 2013-04-01 | Canon Kk | 製造有機發光裝置之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201601364A (zh) | 2016-01-01 |
| CN105321980B (zh) | 2019-03-01 |
| US20150364716A1 (en) | 2015-12-17 |
| CN105321980A (zh) | 2016-02-10 |
| JP2016021380A (ja) | 2016-02-04 |
| JP6594013B2 (ja) | 2019-10-23 |
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