TWI608090B - 用於先進節點前段及後段生產線化學機械硏磨的組成物 - Google Patents
用於先進節點前段及後段生產線化學機械硏磨的組成物 Download PDFInfo
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- TWI608090B TWI608090B TW105109458A TW105109458A TWI608090B TW I608090 B TWI608090 B TW I608090B TW 105109458 A TW105109458 A TW 105109458A TW 105109458 A TW105109458 A TW 105109458A TW I608090 B TWI608090 B TW I608090B
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- 239000000203 mixture Substances 0.000 title claims description 28
- 238000005498 polishing Methods 0.000 title description 9
- 239000000126 substance Substances 0.000 title description 2
- 239000002002 slurry Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 34
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 30
- 239000002253 acid Substances 0.000 claims description 29
- 239000003381 stabilizer Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 15
- 238000000227 grinding Methods 0.000 claims description 13
- 229920002098 polyfluorene Polymers 0.000 claims description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003139 biocide Substances 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 8
- 230000003115 biocidal effect Effects 0.000 claims description 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 7
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 6
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 5
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 5
- 235000015165 citric acid Nutrition 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- 229960002887 deanol Drugs 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 239000000174 gluconic acid Substances 0.000 claims description 3
- 235000012208 gluconic acid Nutrition 0.000 claims description 3
- 235000013905 glycine and its sodium salt Nutrition 0.000 claims description 3
- 229940102253 isopropanolamine Drugs 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000011975 tartaric acid Substances 0.000 claims description 3
- 235000002906 tartaric acid Nutrition 0.000 claims description 3
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000002280 amphoteric surfactant Substances 0.000 claims description 2
- 239000003945 anionic surfactant Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 239000003093 cationic surfactant Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 claims description 2
- 229920000867 polyelectrolyte Polymers 0.000 claims description 2
- 150000003573 thiols Chemical class 0.000 claims description 2
- 150000003852 triazoles Chemical class 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229960002449 glycine Drugs 0.000 claims 2
- BFRGSJVXBIWTCF-UHFFFAOYSA-N niobium monoxide Chemical compound [Nb]=O BFRGSJVXBIWTCF-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- 235000008504 concentrate Nutrition 0.000 description 62
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 20
- 238000010790 dilution Methods 0.000 description 15
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 150000007522 mineralic acids Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 241000724291 Tobacco streak virus Species 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
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- 235000020354 squash Nutrition 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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Description
本揭露內容係有關於用於半導體基材之化學機械研磨(CMP)之一含水漿料。更特別地，本揭露內容係有關於特別用於研磨存在於複合先進節點結構之不受限地諸如四乙基正矽酸鹽(TEOS)或相似者、層間介電體、氮化矽(SixNy)、碳化矽(SiC)、聚矽、高k材料、金屬、合金，及其等共同形成之材料之數種基材之一含水漿料。
於半導體產業，係持續需要降低積體電路尺寸，以便增加活性組份之密度。為達成較高之組份密度，現今研究係有關於利用創新基材物料及平坦化方案。產生之問題係現今研磨組成物無法達成用於最大電路性能所必要之平面性要求。
如Prince等人之美國專利第7,166,506號案中所述且於第1圖中所示般，於電晶體之形成，一層間介電體係沉積於具有一聚矽閘之元件結構上。此介電層係經由CMP
平坦化，至聚矽閘露出為止。於第1圖之方法，聚矽閘係藉由不適當之CMP移除介電層、蝕刻終止層、硬遮罩，及部份之間隔物而露出。於傳統之積體化方案，需要一種二步驟方法。諸如於美國專利第5,759,917及6,027,554號案中所揭示之一CMP組成物可被用以移除介電層，但其對蝕刻終止層會具有最小衝擊。然後，如於美國專利第6,984,588及7,217,989號案中所述之一第二組成物可被用以移除蝕刻終止層。再者，若第1圖顯示之元件結構依循一金屬閘積體化方案，聚矽閘需被移除且以諸如鋁之一金屬閘替換。鋁沉積會需要另一平坦化步驟，及一第三組成物。
美國專利第6,255,211號案係有關於碳化矽(SiC)積體化方案。第2圖顯示與3D系統階層積體化有關之一典型方案，其中，數個層係使用直通矽晶穿孔(TSV)相互連接。於3D系統階層裝置之情況，一極薄之SiC層於後段生產線(BEOL)方法作為一終止層。雖然一般之CMP化學(諸如，於美國專利第6,255,211號案中所揭示者)可達成相對較高之二氧化矽對碳化矽(50：1)之選擇率，且可用於SiC障壁方案，但不能容易地應用於3D系統階層元件積體化，因為無論選擇率數值，SiC研磨速率係相對較高。
因此，需要能使用創新基材物料及平坦化方案之一CMP漿料，及促進現今及先前之積體化方案以改良FEOL及/或BEOL CMP。現今之漿料僅用於特別應用，需使用不同種類之漿料，此明顯增加相關處理方法之成本，因為需要使用者庫存許多不同漿料。
本揭露內容提供用於使現今及下一代之半導體積體電路基材平坦化之CMP漿料及濃縮物。濃縮物包含a)一磨料、b)一酸、c)一穩定劑，及d)水。本揭露內容提供一濃縮物，其可經高度稀釋提供於2.2-3.5之較佳使用點pH範圍內提供峰值性能及性能調整能力之一研磨漿料。
藉由已證實之對各種積體電路基材之性能，本揭露內容之漿料及濃縮物藉由於現今積體電路基材提供性能維持同時對於下一代基材及積體化方案顯示顯著優點，而係與現今可獲得之漿料不同。本揭露內容之漿料能成功且可控制地移除第1圖中所示之介電層、蝕刻終止層，及硬遮罩層，提供具高處理量之成本有效率的方法。本揭露內容之漿料亦提供以第2圖所示不同金屬之移除速率為基準之一種有效率之一步驟或多步驟之移除方法，即使當討論中之元件依據一金屬閘體積化方案。再者，本揭露內容之漿料可終止於SiC，其係使3D系統階層元件成為可能且可用於先前之SiC積體化方案之一特徵。
因此，於一實施例，本揭露內容提供用以研磨用於半導體積體電路元件之基材之一種可高度稀釋之濃縮物。此濃縮物包含一磨料、一酸、一穩定劑，及水。此濃縮物之pH係於2.2與2.9間。
於另一實施例，本揭露內容提供一種以一漿料一電晶體之方法，此漿料包含一磨料、一酸、一穩定劑，及
水，此電晶體包含一聚矽閘、於聚矽閘上之一硬遮罩、於硬遮罩上之一蝕刻終止層，及於蝕刻終止層上之一介電層，此方法包含以此漿料研磨介電層、蝕刻終止層、硬遮罩，及聚矽閘之步驟。
於另一實施例，本揭露內容提供一種以一漿料研磨一多層基材之方法，此漿料包含一磨料、一酸、一穩定劑，及水。此基材包含數個層，其中，此等層之至少一者係碳化矽，且此等層之至少一者係二氧化矽材料，此方法包含以此漿料研磨所有層之步驟。
第1圖係一現今元件及用於多開口(poly-open)研磨方法之相關材料移除步驟之示意圖；第2圖顯示用於3D系統階層直通矽晶穿孔積體化方案之一典型膜堆疊物；第3圖係顯示各種之現今及下一代積體電路基材物料之典型移除速率(正規化)之圖；第4圖係顯示各種之現今及下一代積體電路基材之為使用點(POU)pH之函數之典型正規化移除速率之圖；第5圖係顯示各種之現今及下一代積體電路基材之為POU pH之函數之典型TEOS選擇率之圖；第6圖係顯示本揭露內容之漿料於使用及未使用穩定劑之為pH之函數之典型ζ電位之圖；且第7圖係顯示TEOS及鎢之正規化移除速率之為POU漿料內之殺生物劑濃度之函數之圖。
本揭露內容提供一種用於將現今及下一代半導體積體電路基材平坦化之CMP漿料及濃縮物。濃縮物包含a)一磨料、b)一酸、c)一穩定劑，及d)水。本揭露內容之濃縮物之新穎特徵係低pH範圍，其係相對應於比典型上於現今漿料中發現者更高之重量。濃縮物亦使用比現今可利用者更低重量百分率之穩定劑，特別是於使用點POU。本揭露內容之濃縮物亦可稀釋至最高達一極高範圍，0-60X，且仍達極有利之研磨特徵。如下將更詳細探討，本揭露內容之濃縮物因而可用以產生可用於許多不同材料及各種基材研磨應用之CMP漿料，其戲劇性地改良漿料使用之輕易性及成本。
於一實施例，濃縮物可基本上由磨料、酸、穩定劑，及水所構成，意指係排除助於自一基材移除物料或使漿料穩定化之任何組份。於另一實施例，濃縮物係由磨料、酸、穩定劑，及水所構成。
以濃縮物之總重量為基準，且依酸之強度及性質而定，本揭露內容之濃縮物中之酸含量可為從0.01重量%-20重量%，從0.05重量%-3重量%，從0.1重量%-1.0重量%，或其間之任何範圍。濃縮物中之酸含量係使得濃縮物之pH係於2.2與2.9之間。自此濃縮物製得之漿料被調整，使得POU漿料組成物之pH範圍係2.2-3.5。此係與習知技藝者相比時本揭露內容之濃縮物及漿料間主要差異。習知技藝
之漿料面對之問題係於低pH值時，基材物料之移除速率會有利，但濃縮物中之磨料會因低pH而衰退。於較高pH值，磨料係穩定，但需要更多之磨料以達成有利之移除速率，此顯著地提高漿料擁有者之成本。本揭露內容因而藉由提供一於濃縮物及POU漿料皆提供低pH，且亦具有高的基材物料移除速率之濃縮物而解決此問題。
組成物之pH範圍對於性能係重要，如第4圖所顯示，其顯示當以本揭露內容之漿料處理時，為pH之函數之各種基材之正規化移除速率。於低於2.2之pH值，雖然各種基材之移除速率可能有利，但嚴苛之酸性條件損及基材且產生不一致之性能。於大於3.5之pH值，於第4圖可見到聚矽之移除性能係大量增加。但是，此犧牲各種其它基材物料之性能。若最終使用者需要聚矽之選擇性能，本組成物可以指示之pH範圍外使用。但是，對於下一代積體化方案，移除各種沉積基材之選擇比率對於使下一代技術成為可能係重要。於2.2-2.9之重要pH範圍內使用之本揭露內容之濃縮物提供達成此任務之顯著優點。
本揭露內容之酸可為一有機酸，及無機酸，或一其等之混合物。使用之酸的類型不受限，只嬰其不會衝擊本揭露內容之能性功效及穩定性。用於本揭露內容之適合酸之例子可不受限地包括羧酸類，諸如，葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、乙醇酸、丙二酸、甲酸、草酸、磺酸(類)、胺基酸類、胺基乙酸類、無機酸類，諸如，氫氯酸、硝酸、硫酸、膦酸、磷酸、有機磷酸，或其等之任何
混合物。強酸類係特別有用，因為以弱酸類可能難以對濃縮物達成所欲之低Ph。於一實施例，此酸係一或多種具有少於-2.0之酸解離常數(pKa)值之酸。
濃縮物之磨料可為任何適合磨料，其不受限地包括氧化鋁、二氧化矽、氧化鈦、氧化鈰、氧化鋯、經表面處理之磨料與共同形成之產物，及/或其等之混合物。磨料可經或不經化學及/或熱處理。於一實施例，本揭露內容中之磨料係二氧化矽，其可為膠體二氧化矽。磨料可以任何適合量存在於濃縮物，例如，以濃縮物總重量為基準，從6重量%-30重量%，或10重量%-25重量%。於POU，以POU漿料之總重量為基準，磨料可為從0.2重量%-30重量%，或0.5重量%-10重量%。
本揭露內容之穩定劑可為一胺或四級銨化合物。例子不受限地包括C1-C12烷醇類及其衍生物、乙醇胺、甲基胺基乙醇、二甲基胺基乙醇、異丙醇胺、氫氧化四甲銨、氫氧化四丁銨。濃縮物中穩定劑濃度之量可為從0.001重量%-5重量%，或從0.05重量%-2重量%，但是，另外量可能需要，其係依選擇之磨料顆粒性質及酸而定。穩定劑對於本揭露內容係具重要性，以便達成具高稀釋能力之一穩定濃縮物。
使用穩定劑係用以提供於第6圖所顯示之穩定範圍內電動電位。未使用穩定劑，第6圖顯示組成物會帶有不穩定之膠體穩定性，此最終會導致顆粒之生長、聚集，及/或相分離。ζ電位係膠體系統內之電動電位之基準，意指
其係測量濃縮物內顆粒之電荷，及其彼此排斥或吸引之傾向。正或負值愈高，濃縮物或漿料愈穩定。當接近0時，濃縮物會不穩定，因為顆粒會聚集。由第6圖可見到，無穩定劑，本揭露內容之濃縮物係於一廣範圍pH值之不穩定區域。具有穩定劑，僅具有有限之pH值範圍會使濃縮物不穩定。
可高度稀釋之濃縮物之最大優點係能提供最終使用者降低之擁有成本。最終使用者能以水稀釋濃縮物，以配製供使用之POU漿料。本揭露內容提供使用者以稀釋為函數調整基材移除性能之能力，使得最終使用者能使用濃縮物降低成本及對特殊處理要求而調整。但是，使用濃縮物係一種挑戰，因為於高含量之組份濃縮(諸如，酸及磨料)，濃縮物之穩定性受不利影響。如上所探討，此現象被觀察到，因為膠體顆粒穩定性係受空間及表面作用所控制。一般，一組成物中之磨料量愈大，對於不穩定性係具更大可能性。但是，本揭露內容之濃縮物對於最高達30重量%之磨料濃度，及於極低pH值已證實穩定。
本揭露內容之濃縮物可選擇性地使用殺生物劑以避免及/或減輕。本揭露容之殺生物劑可為一有機錫、柳醯苯胺、硫醇、四級銨化合物，或過氧化氫。以濃縮物總重量為基準，本揭露內容之殺生物劑之一般範圍係0.001重量%-8重量%。當於POU稀釋添加作為補充物，殺生物劑亦被發現助於保護聚矽表面及用以促進鎢之移除。已發現於此濃縮物，較低重量範圍之殺生物劑，接近0.001重量%，
係適合，即使於濃縮物已被稀釋後，額外之殺生物劑可添加，以POU漿料之總重量為基準，最高達2重量%，最高達5重量%，且最高達8重量%。再者，於稀釋後以此等量添加殺生物劑已顯示助於保護聚矽表面。
濃縮物可進一步選擇性地包含添加劑以調整成特定能性標準。添加劑不受限地包括陽離子性表面活性劑、陰離子性表面活性劑、非離子性表面活性劑、聚電解質、兩性表面活性劑、苯并三唑、三唑、苯并咪唑、過氧化氫、甘油，及其等之化合物與混合物。
提供實施例以進一步例示說明本揭露內容之濃縮物之能力。提供之實施例非意欲且不應被解釋為限制本揭露內容之範圍。
於此實施例，濃縮物包含12重量%之膠體二氧化矽磨料(諸如，Nalco、Fuso或Nissan公司提供者)，0.10重量%之作為穩定劑之四級銨化合物，及0.26重量%之無機酸，諸如，氫氯酸、硝酸、硫酸、磷酸，以達成2.2之濃縮物pH。如第1表所示，使用水之各種稀釋被產生以測量氧化物、聚矽及氮化矽(SixNy)膜之移除性能。對於所有實施例，一AMAT Mirra研磨機係以3psi之下壓力及175毫升/分鐘之流速使用。
第1表 正規化移除速率對比於稀釋因子
第1表中之結果顯示於不同稀釋之對於氧化物、聚矽，及SixNy之可行移除速率。此等結果亦指示以適於處理要求之稀釋因子為基準調整本揭露內容。
再者，結果顯示TEOS對聚矽及對SixNy之選擇率以稀釋係維持穩定。習知技藝已廣泛地顯示自SixNy膜研磨極化之氧化物研磨組成物。美國專利第7,365,013號案顯示選擇率結果，其最佳係5：1之TEOS：SixNy，意指不同於以本揭露內容之濃度縮，需數種不同組成物用於進階結構。相似地，美國專利第6,027,554號案係聚焦於以作為研磨磨料之SixNy粉末為主之一組成物。此組成物能達成極高之氧化物移除速率，但極弱之SixNy速率，產生大於9：1之TEOS：SiN選擇率。再次地，此意指數種不同漿料需被用以研磨不同表面。於美國專利第7,365,013及6,027,554號案中所揭示之漿料，稀釋係不可能-組成物係具有12.5重量%及10重量%之磨料。此外，此等組成物具有高的鹼性pH值。
本揭露內容顯示依濃縮物之選擇磨料濃度而定稀釋高達60x之能力。本揭露內容之濃縮物因為使用一穩定劑用於膠體顆粒穩定化而能達成如此高之稀釋。再次地，
第6圖顯示本揭露內容之為pH之函數之ζ電位。於第6圖，清楚顯示未使用一穩定劑，組成物之ζ電位於膠體不穩定區係持續廣pH範圍。但是，藉由使用一穩定劑，組成物於低pH及於pH增加時顯示高程度之膠體穩定性，ζ電位經不穩定區快速下降，且再次回到高穩定性。需注意即使於組成物之等電點，藉由使用穩定劑，膠體穩定性仍被維持。此係本揭露內容優於習知技藝之一顯著優點。
於此實施例，濃縮物包含12重量%之膠體二氧化矽磨料(諸如，Nalco、Fuso，或Nissan公司所提供者)，0.10重量%之作為穩定劑之四級銨化合物，及足夠之無機酸，諸如，氫氯酸、硝酸、硫酸、磷酸，以達成2.2之濃縮物pH。包含3重量%之磨料之一POU漿料係經由以水稀釋而產生。然後，POU之pH被調整而產生範圍從1.8-7.0 pH之樣品。由第4圖之結果可見到，對於超出3.5之POU pH值，各種移除速率嚴重惡化且同時導致TEOS選擇率之嚴重變化。於低於3.5之pH量，TEOS、聚矽，及SixNy之移除速率係於可接受之量，且TEOS及聚矽或SixNv之選擇率維持於1：1-2：1間。但是，超過3.5之pH，即使當TEOS：SixNy之選擇率維持於一可接受之量內，二材料之整體移除速率戲劇性地降至不可接受之點。此外，聚矽之移除速率係隨增加之pH而逐步上升，與TEOS選擇率相反，但再次地，於高於3.5之pH量之TEOS之移除速率係不可接受。相同地，低於2.2之POU pH，由於漿料對基材之有害作用，晶圓內及晶圓對晶圓之
不一致性被觀察到。
有關於其中一理想CMP漿料能可控制地移除介電層、蝕刻終止層，及硬遮罩層之多開口研磨方法，本發明之濃縮物於2.2-3.5之POU pH範圍內顯示此能力。於此POU pH範圍內，介電體及SixNy之速率維持強烈且TEOS：SiN選擇率維持少於2：1。再者，鋁之移除速率係大於500Å/分鐘，此係一金屬閘可被使用之一有效值。
習知技藝未顯示能有效一步驟處理以移除此實施例所界定之層之一組成物。例如，美國專利第7,365,013號案，其係利用一12.5重量%之煙燻二氧化矽組成物，如於實施例1中所述係可最佳地達成5：1之TEOS：SiN選擇率，且指示無移除聚矽、鋁，或其它基材之能力。相似地，美國專利第6,027,554號案，其係利用10重量%之SixNy磨料，可最佳地達成9：1之TEOS：SiN選擇率，且移除速率對於此等應用係太具侵略性。美國專利第6,027,554號案亦顯示未指示移除聚矽、鋁，或其它基材之能力。美國專利第6,984,588號案係利用一經磨成粉之氧化鈰磨料，且顯示有效之TEOS及SIN移除速率與有利之選擇率。但是，此係利用9psi下壓力方法而達成。熟習此項技藝者會表示此對於現今及下一代CMP方法係太具侵略性之處理條件。再者，588專利案之漿料具有鹼性pH，且未顯示對於聚矽、鋁，或其它基材之能力。
於此實施例，濃縮物包含12重量%之膠體二氧化
矽磨料(諸如，Nalco、Fuso、Nissan公司所提供者)，0.10重量%之作為穩定劑之四級銨化合物，及足夠之無機酸，諸如，氫氯酸、硝酸、硫酸、磷酸，以達成2.2之濃縮物pH。於此實施例，一3重量%磨料之POU漿料係經由以水稀釋而產生。第2表顯示本揭露內容對TEOS及碳化矽(SIC)膜之正規化移除性能。
於第2圖所示之3D系統階層元件積體化之情況，一極薄之SiC層於後段生產線(BEOL)方法作為一終止層。雖然可達成相對較高之二氧化矽對碳化矽(50：1)選擇率之相似於美國專利第6,255,211號案中所述者之一般CMP化學可用於現今之SiC障壁方案，但其係不能容易地應用於3D系統階層元件積體化，因為SiC研磨速率係相對較高，典型上範圍係從100-250Å/分鐘。無論選擇率值，此等級之移除速率對於其中SiC層典型上係於300Å等級之3D TSV積體化係無效。自本發明濃縮物製得之POU漿料係能下一代3D系統階層積體化方案所需般有效地終止於SiC。第2表中之結果顯示實施軟著陸(soft-landing)金屬(Cu)平坦化，及其後於作為障壁層之一薄碳化矽層上有效終止之能力。
於此實施例，濃縮物包含12重量%之膠體二氧化矽磨料(諸如，Nalco、Fuso，或Nissan公司所提供者)，0.10重量%之作為穩定劑之四級銨化合物，及足夠之無機酸，諸如，氫氯酸、硝酸、砊酸、磷酸，以達成2.2之濃縮物pH。。於此實施例，3重量%磨料之POU漿料係經由以水稀釋而產生。此實施例於此情況係用以提供調整聚矽之表面粗糙度之能力。利用於POU漿料中之各種重量%之過氧化氫，有效降低聚矽表面粗糙度係如第3表所示般觀察到。
第3表之結果對於應用及/或應用調整係重要，使聚矽表面上之局部化蝕刻及凹陷達最小。對於美國專利第7,166,506號案中所定義且於第1圖中所示之多開口研磨積體化方案，研磨組成物對於露出之聚矽閘之衝擊可能會衝擊特徵性能。如本揭露內容所示之調整聚矽表面之能力作為使此定義之積體化方法及相關方法成為可能。
於此實施例，濃縮物包含12重量%之膠體二氧化矽磨料(諸如，Nalco、Fuso，或Nissan公司所提供者)，0.10重量%之作為穩定劑之四級銨化合物，及0.26重量%之無機酸，諸如，氫氯酸、硝酸、硫酸，或磷酸，以達成2.2之濃縮物pH。於此實施例，3重量%磨料之POU漿料係經由以水稀釋而產生。此實施例係例示殺生物劑之量如何可促進鎢基材之移除。如第7圖所示，使POU漿料中之過氧化氫從0增至6重量%於鎢移除速率產生11x之增加。第7圖亦顯示對TEOS移除速率之最小衝擊係以POU補充過氧化氫因而能依所需調整TEOS：W選擇率而觀察到。此等結果指示本揭露內容具有於本體研磨及/或拋光方法中用於移除鎢之能力。
雖然本揭露內容已參考一或多個例示實施例作說明，但熟習此項技藝者會瞭解於未偏離本揭露內容之範圍，各種改變可被為之且等化物可取代其元件。此外，於未偏離其範圍下，許多修改可被為之以使一特別之情況或材料適用於本揭露內容之教示。因此，所意欲者係本揭露內容不限於作為考量到之最佳模式而揭露之特別實施例，而是本揭露內容會包含落於所附申請專利範圍之範圍內之所有實施例。
Claims (18)
- 一種以一漿料研磨一多層基材的方法，該漿料包含一磨料、一酸、一穩定劑，及水，且具有自2.2至3.5的pH；該基材包含一聚矽閘、於該聚矽閘上之一硬遮罩、於該硬遮罩上之一蝕刻終止層，以及於該蝕刻終止層上之一介電層；該方法包含以該漿料研磨各個該介電層、該蝕刻終止層、該硬遮罩，及該聚矽閘之步驟。
- 如申請專利範圍第1項之方法，其中該漿料的pH係介於2.2及2.9間。
- 如申請專利範圍第1項之方法，其中該漿料包含：a)以該漿料的總重量為基礎，6重量%至30重量%之磨料，其係選自由氧化鋁、二氧化矽、氧化鈦、氧化鈰、氧化鋯、其等共同形成之產物，及其等之混合物所構成之族群；b)以該漿料的總重量為基礎，0.01重量%至20重量%之酸，其係選自由葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、乙醇酸、丙二酸、甲酸、草酸、磺酸、胺基酸、胺基乙酸、氫氯酸、硝酸、硫酸、膦酸、磷酸、有機磷酸，及其等之任何混合物所構成之族群；c)以該漿料的總重量為基礎，0.001重量%至5重量%之穩定劑，其係選自由C1-C12烷醇類及其衍生物、乙醇胺、甲基胺基乙醇、二甲基胺基乙醇、異丙醇胺、氫氧化四甲銨、氫氧化四丁銨，及其等之任何混合物所構成 之族群；及d)水。
- 如申請專利範圍第1項之方法，其中該磨料係膠體二氧化矽。
- 如申請專利範圍第1項之方法，其中，以該漿料之總重量為基準，該酸係以0.05重量%至3重量%之量存在於該漿料。
- 如申請專利範圍第1項之方法，其中該酸包含一選自由氫氯酸、硝酸、硫酸、膦酸、磷酸、有機磷酸，及其等之混合物所構成之族群的酸。
- 如申請專利範圍第1項之方法，其中該漿料進一步包含一殺生物劑，其係選自由有機錫、柳醯苯胺、硫醇、四級銨化合物、過氧化氫，及其等之任何混合物所構成之族群。
- 如申請專利範圍第7項之方法，其中該殺生物劑係過氧化氫。
- 如申請專利範圍第7項之方法，其中，以該漿料之總重量為基準，該殺生物劑係以0.001重量%至8重量%之量存在。
- 如申請專利範圍第1項之方法，其中該漿料進一步包含一添加劑，其係選自由陽離子性表面活性劑、陰離子性表面活性劑、非離子性表面活性劑、聚電解質、兩性表面活性劑、苯并三唑、三唑、苯并咪唑、過氧化氫、甘油，及其等之化合物與混合物所構成之族群。
- 如申請專利範圍第1項之方法，其中至少一該層包含一氧化物材料、至少一該層包含一聚矽材料、及至少一多層包含一氮化物材料。
- 如申請專利範圍第1項之方法，進一步包含在自1：1至2：1於氧化物對聚矽之移除率選擇率，研磨該包含一氧化物材料之層及該包含一聚矽材料之層。
- 如申請專利範圍第1項之方法，進一步包含在自1：1至2：1於氧化物對氮化物之移除率選擇率，研磨該包含一氧化物材料之層及該包含一氮化物材料之層。
- 一種以一漿料研磨一多層基材的方法，該漿料包含一磨料、一酸、一穩定劑，及水，且具有自2.2至3.5的pH；該基材包含多個層，其中至少一個該層包含碳化矽及至少一個該層包含一氧化矽材料；該方法包含以該漿料研磨所有該層之步驟。
- 如申請專利範圍第14項之方法，其中該漿料之pH係介於2.2及2.9間。
- 如申請專利範圍第14項之方法，其中該漿料包含：a)以該漿料的總重量為基礎，6重量%至30重量%之磨料，其係選自由氧化鋁、二氧化矽、氧化鈦、氧化鈰、氧化鋯、其等共同形成之產物，及其等之混合物所構成之族群；b)以該漿料的總重量為基礎，0.01重量%至20重量%之酸，其係選自由葡萄糖酸、乳酸、檸檬酸、酒石酸、蘋果酸、乙醇酸、丙二酸、甲酸、草酸、磺酸、胺基 酸、胺基乙酸、氫氯酸、硝酸、硫酸、膦酸、磷酸、有機磷酸，及其等之任何混合物所構成之族群；c)以該漿料的總重量為基礎，0.001重量%至5重量%之穩定劑，其係選自由C1-C12烷醇類及其衍生物、乙醇胺、甲基胺基乙醇、二甲基胺基乙醇、異丙醇胺、氫氧化四甲銨、氫氧化四丁銨，及其等之任何混合物所構成之族群；及d)水。
- 如申請專利範圍第14項之方法，其中該酸包含一選自由氫氯酸、硝酸、硫酸、膦酸、磷酸、有機磷酸，及其等之混合物所構成之族群的酸。
- 如申請專利範圍第14項之方法，進一步包含在自1：01至1：5於氧化物對聚矽之移除率選擇率，研磨該包含碳化矽之層及該包含一氧化矽材料之層。
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| US8999193B2 (en) | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
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| US10428241B2 (en) * | 2017-10-05 | 2019-10-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions containing charged abrasive |
| CN109505901A (zh) * | 2018-11-20 | 2019-03-22 | 宁国飞鹰汽车零部件股份有限公司 | 一种含芳纶纤维的摩擦材料及摩擦材料构件制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743683B2 (en) * | 2001-12-04 | 2004-06-01 | Intel Corporation | Polysilicon opening polish |
| US20090311864A1 (en) * | 2008-06-12 | 2009-12-17 | Fujifilm Corporation | Polishing slurry |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| EP0786504A3 (en) | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5759917A (en) | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US6217416B1 (en) | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6255211B1 (en) | 1998-10-02 | 2001-07-03 | Texas Instruments Incorporated | Silicon carbide stop layer in chemical mechanical polishing over metallization layers |
| JP2002231666A (ja) * | 2001-01-31 | 2002-08-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| US7217949B2 (en) | 2004-07-01 | 2007-05-15 | International Business Machines Corporation | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) |
| US7166506B2 (en) | 2004-12-17 | 2007-01-23 | Intel Corporation | Poly open polish process |
| US7678700B2 (en) | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
| US20100087065A1 (en) | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743683B2 (en) * | 2001-12-04 | 2004-06-01 | Intel Corporation | Polysilicon opening polish |
| US20090311864A1 (en) * | 2008-06-12 | 2009-12-17 | Fujifilm Corporation | Polishing slurry |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101921617B1 (ko) | 2018-11-23 |
| KR20120002924A (ko) | 2012-01-09 |
| WO2012003082A3 (en) | 2012-03-22 |
| WO2012003082A2 (en) | 2012-01-05 |
| TWI537369B (zh) | 2016-06-11 |
| US8961815B2 (en) | 2015-02-24 |
| TW201625768A (zh) | 2016-07-16 |
| US20150132957A1 (en) | 2015-05-14 |
| US20120003901A1 (en) | 2012-01-05 |
| KR20180036679A (ko) | 2018-04-09 |
| TW201209146A (en) | 2012-03-01 |
| SG177117A1 (en) | 2012-01-30 |
| US9190286B2 (en) | 2015-11-17 |
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