TWI606546B - 靜電夾頭裝置 - Google Patents
靜電夾頭裝置 Download PDFInfo
- Publication number
- TWI606546B TWI606546B TW103105786A TW103105786A TWI606546B TW I606546 B TWI606546 B TW I606546B TW 103105786 A TW103105786 A TW 103105786A TW 103105786 A TW103105786 A TW 103105786A TW I606546 B TWI606546 B TW I606546B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- focus ring
- base portion
- adhesive
- concave
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 claims description 57
- 230000001070 adhesive effect Effects 0.000 claims description 57
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013048185A JP6400273B2 (ja) | 2013-03-11 | 2013-03-11 | 静電チャック装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201505123A TW201505123A (zh) | 2015-02-01 |
| TWI606546B true TWI606546B (zh) | 2017-11-21 |
Family
ID=51487526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103105786A TWI606546B (zh) | 2013-03-11 | 2014-02-21 | 靜電夾頭裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9252039B2 (enExample) |
| JP (1) | JP6400273B2 (enExample) |
| KR (1) | KR102155122B1 (enExample) |
| TW (1) | TWI606546B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6149945B2 (ja) * | 2014-09-30 | 2017-06-21 | 住友大阪セメント株式会社 | 静電チャック装置 |
| JP6540022B2 (ja) * | 2014-12-26 | 2019-07-10 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| US10755902B2 (en) * | 2015-05-27 | 2020-08-25 | Tokyo Electron Limited | Plasma processing apparatus and focus ring |
| GB201511282D0 (en) * | 2015-06-26 | 2015-08-12 | Spts Technologies Ltd | Plasma etching apparatus |
| US11024528B2 (en) * | 2015-10-21 | 2021-06-01 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device having focus ring |
| CN107316795B (zh) * | 2016-04-26 | 2020-01-03 | 北京北方华创微电子装备有限公司 | 一种聚焦环和等离子体处理装置 |
| KR20170127724A (ko) * | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| JP7228989B2 (ja) * | 2018-11-05 | 2023-02-27 | 東京エレクトロン株式会社 | 載置台、エッジリングの位置決め方法及び基板処理装置 |
| CN114843165A (zh) * | 2021-02-01 | 2022-08-02 | 中微半导体设备(上海)股份有限公司 | 一种下电极组件及等离子体处理装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6123804A (en) * | 1999-02-22 | 2000-09-26 | Applied Materials, Inc. | Sectional clamp ring |
| US6475336B1 (en) * | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| JP2003179129A (ja) * | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 静電チャック装置 |
| US7494560B2 (en) * | 2002-11-27 | 2009-02-24 | International Business Machines Corporation | Non-plasma reaction apparatus and method |
| US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4942471B2 (ja) * | 2005-12-22 | 2012-05-30 | 京セラ株式会社 | サセプタおよびこれを用いたウェハの処理方法 |
| JP5227197B2 (ja) * | 2008-06-19 | 2013-07-03 | 東京エレクトロン株式会社 | フォーカスリング及びプラズマ処理装置 |
| US9543181B2 (en) * | 2008-07-30 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Replaceable electrostatic chuck sidewall shield |
| JP5100617B2 (ja) * | 2008-11-07 | 2012-12-19 | 東京エレクトロン株式会社 | リング状部材及びその製造方法 |
| JP5395633B2 (ja) * | 2009-11-17 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置の基板載置台 |
| JP5496630B2 (ja) * | 2009-12-10 | 2014-05-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
| KR20150013627A (ko) * | 2012-04-26 | 2015-02-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치 |
-
2013
- 2013-03-11 JP JP2013048185A patent/JP6400273B2/ja active Active
-
2014
- 2014-02-21 TW TW103105786A patent/TWI606546B/zh active
- 2014-02-26 US US14/190,285 patent/US9252039B2/en active Active
- 2014-03-04 KR KR1020140025410A patent/KR102155122B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140111597A (ko) | 2014-09-19 |
| KR102155122B1 (ko) | 2020-09-11 |
| JP6400273B2 (ja) | 2018-10-03 |
| US20140254061A1 (en) | 2014-09-11 |
| TW201505123A (zh) | 2015-02-01 |
| JP2014175535A (ja) | 2014-09-22 |
| US9252039B2 (en) | 2016-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI606546B (zh) | 靜電夾頭裝置 | |
| US10304718B2 (en) | Electrostatic chuck device | |
| TWI705520B (zh) | 用於高溫製程之基板支撐組件 | |
| US11328948B2 (en) | Electrostatic chuck device and method of manufacturing electrostatic chuck device | |
| JP6640271B2 (ja) | 基板を結合する方法 | |
| US8517392B2 (en) | Electrostatic chuck and manufacturing method thereof | |
| US20150179412A1 (en) | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber | |
| US10497597B2 (en) | Electrostatic chuck assembly and substrate processing apparatus including the same | |
| JP2014179606A (ja) | 半導体製造用チャックのエッジリング冷却モジュール | |
| TW201933529A (zh) | 用於高溫處理之靜電吸座組件 | |
| CN110622291A (zh) | 基板支撑设备 | |
| TW201909330A (zh) | 靜電卡盤和電漿加工裝置 | |
| KR20160052354A (ko) | 클램프 조립체 | |
| US10957573B2 (en) | Electrostatic chuck device including a heating member | |
| JP6545613B2 (ja) | フォーカスリング | |
| JP2015029088A (ja) | 微細溝付き非付着面を有する装着装置 | |
| TWI518820B (zh) | 具有改良之衝擊保護器的噴頭組件 | |
| JP7299805B2 (ja) | 保持装置 | |
| CN108538744A (zh) | 卡盘装置以及半导体加工设备 | |
| KR102363647B1 (ko) | 베이스 플레이트 구조체 및 그 제조방법, 기판 고정 장치 | |
| JP7710891B2 (ja) | 保持装置 | |
| CN111613509A (zh) | 卡盘结构及反应腔室 | |
| CN107533997A (zh) | 用于增进工件的温度均匀性的设备 | |
| JP2021100050A (ja) | 半導体製造装置用部品 | |
| KR102869774B1 (ko) | 반도체 웨이퍼 제조 장치의 내식성 향상 방법 |