TWI604758B - Plasma processing device - Google Patents

Plasma processing device Download PDF

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Publication number
TWI604758B
TWI604758B TW105143327A TW105143327A TWI604758B TW I604758 B TWI604758 B TW I604758B TW 105143327 A TW105143327 A TW 105143327A TW 105143327 A TW105143327 A TW 105143327A TW I604758 B TWI604758 B TW I604758B
Authority
TW
Taiwan
Prior art keywords
workpiece
cylindrical electrode
rotating platform
electron inducing
processing apparatus
Prior art date
Application number
TW105143327A
Other languages
English (en)
Chinese (zh)
Other versions
TW201724919A (zh
Inventor
Daisuke Ono
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW201724919A publication Critical patent/TW201724919A/zh
Application granted granted Critical
Publication of TWI604758B publication Critical patent/TWI604758B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
TW105143327A 2015-12-28 2016-12-27 Plasma processing device TWI604758B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015257353 2015-12-28
JP2016251556A JP6800009B2 (ja) 2015-12-28 2016-12-26 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201724919A TW201724919A (zh) 2017-07-01
TWI604758B true TWI604758B (zh) 2017-11-01

Family

ID=59272139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105143327A TWI604758B (zh) 2015-12-28 2016-12-27 Plasma processing device

Country Status (4)

Country Link
JP (1) JP6800009B2 (ko)
KR (1) KR102322816B1 (ko)
CN (1) CN107012436B (ko)
TW (1) TWI604758B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7000083B2 (ja) * 2017-09-07 2022-01-19 芝浦メカトロニクス株式会社 成膜装置
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
CN109603450A (zh) * 2019-02-20 2019-04-12 北京卓昱科技有限公司 一种智能电子烟气净化系统
WO2020246449A1 (ja) * 2019-06-06 2020-12-10 芝浦メカトロニクス株式会社 成膜装置
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663107B2 (ja) * 1984-11-14 1994-08-17 東京エレクトロン山梨株式会社 平行平板型ドライエツチング装置
JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
JP4212210B2 (ja) * 1999-12-07 2009-01-21 株式会社小松製作所 表面処理装置
JP4428873B2 (ja) * 2001-02-28 2010-03-10 芝浦メカトロニクス株式会社 スパッタリング装置
US20090266703A1 (en) * 2005-08-02 2009-10-29 Nan Jiang Plasma generating device and film deposition method in which the plasma generating device is used
JP4854235B2 (ja) * 2005-08-22 2012-01-18 芝浦メカトロニクス株式会社 プラズマ処理装置
KR101247198B1 (ko) * 2005-09-09 2013-03-25 가부시키가이샤 알박 이온원 및 플라스마 처리장치
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
JP2017120781A (ja) 2017-07-06
CN107012436B (zh) 2019-08-16
KR102322816B1 (ko) 2021-11-08
TW201724919A (zh) 2017-07-01
JP6800009B2 (ja) 2020-12-16
CN107012436A (zh) 2017-08-04
KR20170077840A (ko) 2017-07-06

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