JP6800009B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP6800009B2
JP6800009B2 JP2016251556A JP2016251556A JP6800009B2 JP 6800009 B2 JP6800009 B2 JP 6800009B2 JP 2016251556 A JP2016251556 A JP 2016251556A JP 2016251556 A JP2016251556 A JP 2016251556A JP 6800009 B2 JP6800009 B2 JP 6800009B2
Authority
JP
Japan
Prior art keywords
rotary table
work
tubular electrode
opening
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016251556A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017120781A (ja
JP2017120781A5 (ko
Inventor
大祐 小野
大祐 小野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to TW105143327A priority Critical patent/TWI604758B/zh
Priority to CN201611242158.5A priority patent/CN107012436B/zh
Priority to KR1020160181293A priority patent/KR102322816B1/ko
Publication of JP2017120781A publication Critical patent/JP2017120781A/ja
Publication of JP2017120781A5 publication Critical patent/JP2017120781A5/ja
Application granted granted Critical
Publication of JP6800009B2 publication Critical patent/JP6800009B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2016251556A 2015-12-28 2016-12-26 プラズマ処理装置 Active JP6800009B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW105143327A TWI604758B (zh) 2015-12-28 2016-12-27 Plasma processing device
CN201611242158.5A CN107012436B (zh) 2015-12-28 2016-12-28 等离子体处理装置
KR1020160181293A KR102322816B1 (ko) 2015-12-28 2016-12-28 플라즈마 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015257353 2015-12-28
JP2015257353 2015-12-28

Publications (3)

Publication Number Publication Date
JP2017120781A JP2017120781A (ja) 2017-07-06
JP2017120781A5 JP2017120781A5 (ko) 2019-08-15
JP6800009B2 true JP6800009B2 (ja) 2020-12-16

Family

ID=59272139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016251556A Active JP6800009B2 (ja) 2015-12-28 2016-12-26 プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP6800009B2 (ko)
KR (1) KR102322816B1 (ko)
CN (1) CN107012436B (ko)
TW (1) TWI604758B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7000083B2 (ja) * 2017-09-07 2022-01-19 芝浦メカトロニクス株式会社 成膜装置
JP7144219B2 (ja) * 2018-03-22 2022-09-29 芝浦メカトロニクス株式会社 真空処理装置及びトレイ
JP7141989B2 (ja) * 2018-09-28 2022-09-26 芝浦メカトロニクス株式会社 成膜装置
CN109603450A (zh) * 2019-02-20 2019-04-12 北京卓昱科技有限公司 一种智能电子烟气净化系统
WO2020246449A1 (ja) * 2019-06-06 2020-12-10 芝浦メカトロニクス株式会社 成膜装置
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0663107B2 (ja) * 1984-11-14 1994-08-17 東京エレクトロン山梨株式会社 平行平板型ドライエツチング装置
JP3371176B2 (ja) * 1995-01-25 2003-01-27 ソニー株式会社 プラズマ処理装置および半導体装置の製造方法
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
JP4212210B2 (ja) * 1999-12-07 2009-01-21 株式会社小松製作所 表面処理装置
JP4428873B2 (ja) * 2001-02-28 2010-03-10 芝浦メカトロニクス株式会社 スパッタリング装置
US20090266703A1 (en) * 2005-08-02 2009-10-29 Nan Jiang Plasma generating device and film deposition method in which the plasma generating device is used
JP4854235B2 (ja) * 2005-08-22 2012-01-18 芝浦メカトロニクス株式会社 プラズマ処理装置
KR101247198B1 (ko) * 2005-09-09 2013-03-25 가부시키가이샤 알박 이온원 및 플라스마 처리장치
US8066857B2 (en) * 2008-12-12 2011-11-29 Fujifilm Corporation Shaped anode and anode-shield connection for vacuum physical vapor deposition
JP5350043B2 (ja) * 2009-03-31 2013-11-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
TWI604758B (zh) 2017-11-01
JP2017120781A (ja) 2017-07-06
CN107012436B (zh) 2019-08-16
KR102322816B1 (ko) 2021-11-08
TW201724919A (zh) 2017-07-01
CN107012436A (zh) 2017-08-04
KR20170077840A (ko) 2017-07-06

Similar Documents

Publication Publication Date Title
JP6800009B2 (ja) プラズマ処理装置
KR101687565B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
JP6629116B2 (ja) プラズマ処理装置
KR20110084948A (ko) 스퍼터 타겟으로의 원형 대칭의 ｒｆ 공급원 및 ｄｃ 공급원을 갖는 물리 기상 증착 반응로
US8956512B2 (en) Magnetron sputtering apparatus and film forming method
JP2012512324A (ja) 真空物理的蒸着のためのチャンバシールド
JP5944883B2 (ja) 粒子逆流防止部材及び基板処理装置
JP2002521567A (ja) 不均一性補償を伴う表面の物理的気相処理
US20220367161A1 (en) Physical vapor deposition apparatus and method thereof
TW201913145A (zh) 成膜裝置
JP7204350B2 (ja) 載置台、基板処理装置及びエッジリング
US11127574B2 (en) Plasma processing apparatus
US20150329956A1 (en) Method for continuously forming noble metal film and method for continuously manufacturing electronic component
CN110965030B (zh) 成膜装置
JP7162483B2 (ja) 成膜装置及び成膜製品の製造方法
CN114182227B (zh) 成膜装置
JP2003017472A (ja) プラズマ処理方法及び装置
US20240021415A1 (en) Film forming apparatus
JP6574588B2 (ja) プラズマ処理装置
JP2023048694A (ja) 成膜装置
JP2002190450A (ja) プラズマ処理方法とその装置
JP2020029621A (ja) プラズマ処理装置
KR100757855B1 (ko) 기판 처리 장치 및 이를 이용한 기판의 처리 방법
JP2010031383A (ja) プラズマ支援スパッタ成膜装置
JP2016225203A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190704

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190704

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200804

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201027

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201124

R150 Certificate of patent or registration of utility model

Ref document number: 6800009

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150