TWI604758B - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
- Publication number
- TWI604758B TWI604758B TW105143327A TW105143327A TWI604758B TW I604758 B TWI604758 B TW I604758B TW 105143327 A TW105143327 A TW 105143327A TW 105143327 A TW105143327 A TW 105143327A TW I604758 B TWI604758 B TW I604758B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- cylindrical electrode
- rotating platform
- electron inducing
- processing apparatus
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 23
- 230000032258 transport Effects 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000005121 nitriding Methods 0.000 claims description 6
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- 230000003078 antioxidant effect Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 73
- 239000007789 gas Substances 0.000 description 25
- 239000012212 insulator Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000007254 oxidation reaction Methods 0.000 description 11
- 238000009832 plasma treatment Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000000087 stabilizing effect Effects 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015257353 | 2015-12-28 | ||
| JP2016251556A JP6800009B2 (ja) | 2015-12-28 | 2016-12-26 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201724919A TW201724919A (zh) | 2017-07-01 |
| TWI604758B true TWI604758B (zh) | 2017-11-01 |
Family
ID=59272139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105143327A TWI604758B (zh) | 2015-12-28 | 2016-12-27 | Plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6800009B2 (enExample) |
| KR (1) | KR102322816B1 (enExample) |
| CN (1) | CN107012436B (enExample) |
| TW (1) | TWI604758B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7000083B2 (ja) * | 2017-09-07 | 2022-01-19 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| JP7144219B2 (ja) * | 2018-03-22 | 2022-09-29 | 芝浦メカトロニクス株式会社 | 真空処理装置及びトレイ |
| JP7141989B2 (ja) * | 2018-09-28 | 2022-09-26 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| CN109603450A (zh) * | 2019-02-20 | 2019-04-12 | 北京卓昱科技有限公司 | 一种智能电子烟气净化系统 |
| WO2020246449A1 (ja) * | 2019-06-06 | 2020-12-10 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| JP7111380B2 (ja) * | 2020-04-01 | 2022-08-02 | 株式会社シンクロン | スパッタ装置及びこれを用いた成膜方法 |
| JP2023048694A (ja) * | 2021-09-28 | 2023-04-07 | 芝浦メカトロニクス株式会社 | 成膜装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0663107B2 (ja) * | 1984-11-14 | 1994-08-17 | 東京エレクトロン山梨株式会社 | 平行平板型ドライエツチング装置 |
| JP3371176B2 (ja) * | 1995-01-25 | 2003-01-27 | ソニー株式会社 | プラズマ処理装置および半導体装置の製造方法 |
| US5716505A (en) * | 1996-02-23 | 1998-02-10 | Balzers Prozess-Systems Gmbh | Apparatus for coating substrates by cathode sputtering with a hollow target |
| JP4212210B2 (ja) * | 1999-12-07 | 2009-01-21 | 株式会社小松製作所 | 表面処理装置 |
| JP4428873B2 (ja) * | 2001-02-28 | 2010-03-10 | 芝浦メカトロニクス株式会社 | スパッタリング装置 |
| CN101233792B (zh) * | 2005-08-02 | 2011-07-27 | 日本普瑞伦有限责任公司 | 等离子体发生装置和使用等离子体发生装置的膜沉积方法 |
| JP4854235B2 (ja) * | 2005-08-22 | 2012-01-18 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
| KR101247198B1 (ko) | 2005-09-09 | 2013-03-25 | 가부시키가이샤 알박 | 이온원 및 플라스마 처리장치 |
| US8066857B2 (en) * | 2008-12-12 | 2011-11-29 | Fujifilm Corporation | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
| JP5350043B2 (ja) * | 2009-03-31 | 2013-11-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2016
- 2016-12-26 JP JP2016251556A patent/JP6800009B2/ja active Active
- 2016-12-27 TW TW105143327A patent/TWI604758B/zh active
- 2016-12-28 KR KR1020160181293A patent/KR102322816B1/ko active Active
- 2016-12-28 CN CN201611242158.5A patent/CN107012436B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017120781A (ja) | 2017-07-06 |
| TW201724919A (zh) | 2017-07-01 |
| CN107012436A (zh) | 2017-08-04 |
| CN107012436B (zh) | 2019-08-16 |
| JP6800009B2 (ja) | 2020-12-16 |
| KR102322816B1 (ko) | 2021-11-08 |
| KR20170077840A (ko) | 2017-07-06 |
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