TWI602258B - Integrated multi-cavity and substrate processing system - Google Patents
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- 239000000758 substrate Substances 0.000 title claims description 82
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- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 5
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- 238000000034 method Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Description
本發明關於半導體加工設備領域，具體是指一種整合多功能腔以及基板處理系統。 The invention relates to the field of semiconductor processing equipment, and in particular to an integrated multifunctional cavity and a substrate processing system.
目前的半導體處理系統中，在傳輸腔(Transfer Chamber)和前端模組(EFEM)之間設有真空鎖(load lock)，同時，傳輸腔還分別與多個標準反應腔連接，例如可以是需要高精度、長時間對基板進行蝕刻的電漿蝕刻腔等；在蝕刻過程中首先需要在基板上旋塗一層光阻劑(photoresist)層，通過曝光使光阻劑上形成精確的蝕刻圖形。然後直接以光阻劑為遮罩或者利用光阻劑遮罩蝕刻下方的硬遮罩材料層，最終蝕刻下方的蝕刻目標層。在這些蝕刻製程完成後或者過程中需要將剩餘的光阻劑層去除，以進入下一個處理步驟。習知技術中表面帶有光阻劑的基板無法在同一個處理系統中去除，在標準反應腔內的蝕刻反應完成後再依次反向通過傳輸腔→真空鎖→前端模組以到達另一個基板處理系統進行額外的輔助處理，例如剝除(strip)光阻劑製程； 受光阻劑厚度和標準反應腔中蝕刻製程對光阻劑層的影響，導致剝光製程的耗時差別很大，可以在10秒到2分鐘的範圍內變動，可見剝光的加工速度影響著整個系統的吞吐量；同時，在剝光過程中傳統的反應腔頂部設置的是遠程電漿源(Remote Plasma Source)，其向下注入反應腔內並經過足夠大的擴散空間後擴散到反應腔下方的晶圓並 對其進行剝光製程，因遠程電漿源的結構複雜成本高、操作窗口、噴口、可選氣壓及氣流範圍都較小，導致了其到達晶圓時基體(radical)的密度均一性比較差，加工速度也比較慢。 In the current semiconductor processing system, a load lock is provided between the transfer chamber and the front end module (EFEM), and the transfer chamber is also respectively connected to a plurality of standard reaction chambers, for example, may be required A high-precision plasma etching chamber for etching a substrate for a long time; in the etching process, a photoresist layer is first spin-coated on the substrate, and a precise etching pattern is formed on the photoresist by exposure. The underlying etch target layer is then etched directly with a photoresist as a mask or with a photoresist mask to etch the underlying hard mask material layer. The remaining photoresist layer needs to be removed after or during these etching processes to proceed to the next processing step. In the prior art, the substrate with the photoresist on the surface cannot be removed in the same processing system. After the etching reaction in the standard reaction chamber is completed, the reverse transfer through the transfer chamber → vacuum lock → front end module to reach another substrate. The processing system performs additional auxiliary processing, such as stripping the photoresist process; Due to the thickness of the photoresist and the influence of the etching process in the standard reaction chamber on the photoresist layer, the time-consuming difference of the stripping process is very large, and can be varied within a range of 10 seconds to 2 minutes, and the processing speed of the stripping light is affected. The throughput of the whole system; at the same time, in the stripping process, the top of the traditional reaction chamber is set with a remote plasma source, which is injected into the reaction chamber and diffused into the reaction chamber after a large enough diffusion space. The wafer below The stripping process is carried out because the structure of the remote plasma source is complicated and costly, the operating window, the nozzle, the optional air pressure and the airflow range are small, resulting in poor density uniformity of the substrate when it reaches the wafer. The processing speed is also slower.
本發明的目的在於提供一種整合多功能腔以及基板處理系統，其能夠提高系統的吞吐量、減少基板處理的流轉時間，同時保證了電漿到達晶圓時的密度均一性。 It is an object of the present invention to provide an integrated multi-functional cavity and substrate processing system that can increase the throughput of the system, reduce the flow time of the substrate processing, and ensure the uniformity of density when the plasma reaches the wafer.
為了達到上述目的，本發明藉由以下技術手段實現：一種整合多功能腔，其位於一基板處理系統中。基板處理系統具有前端模組和傳輸腔，其中整合多功能腔的一端連接所述的前端模組，其另一端連接傳輸腔。整合多功能腔包含：處理腔，其設置在整合多功能腔內上部，其一端連接前端模組，用於在前端模組與處理腔之間傳輸基板，其另一端連接傳輸腔，用於在處理腔與傳輸腔之間傳輸基板；ICP電漿源，其連接處理腔，用於對處理腔內的基板進行製程處理；真空鎖，其設置在整合多功能腔內下部，其一端連接前端模組，用於在真空鎖與前端模組之間傳輸基板，其另一端連接傳輸腔，用於在真空鎖與傳輸腔之間傳輸基板。 In order to achieve the above object, the present invention is achieved by the following technical means: an integrated multi-function chamber located in a substrate processing system. The substrate processing system has a front end module and a transmission cavity, wherein one end of the integrated multi-function cavity is connected to the front end module, and the other end is connected to the transmission cavity. The integrated multi-function cavity comprises: a processing chamber disposed in an upper part of the integrated multi-function cavity, one end of which is connected to the front end module for transmitting the substrate between the front end module and the processing cavity, and the other end is connected to the transmission cavity for The substrate is transported between the processing chamber and the transfer chamber; the ICP plasma source is connected to the processing chamber for processing the substrate in the processing chamber; the vacuum lock is disposed in the lower part of the integrated multi-function chamber, and one end is connected to the front end mold The group is configured to transfer the substrate between the vacuum lock and the front end module, and the other end is connected to the transfer cavity for transferring the substrate between the vacuum lock and the transfer cavity.
較佳地，真空鎖與處理腔通過兩者之間的一隔板相互隔離。 Preferably, the vacuum lock and the processing chamber are isolated from each other by a partition therebetween.
較佳地，ICP電漿源為頂部設有進氣口、底部設有圓柱形注入端的ICP電漿發生器，該注入端下方開口與處理腔連接。 Preferably, the ICP plasma source is an ICP plasma generator having an inlet port at the top and a cylindrical injection end at the bottom, and the lower opening of the injection end is connected to the processing chamber.
較佳地，ICP電漿發生器的注入端下方開口直徑大於基板直徑的一半、且小於基板直徑。 Preferably, the diameter of the opening below the injection end of the ICP plasma generator is greater than half the diameter of the substrate and smaller than the diameter of the substrate.
較佳地，處理腔內設有位於底部的基座，用於放置基板，基座內設有加熱裝置。 Preferably, the processing chamber is provided with a base at the bottom for placing the substrate, and a heating device is arranged in the base.
較佳地，處理腔的一端通過第二門閥與前端模組連接，其另一端通過第三門閥與傳輸腔連接。 Preferably, one end of the processing chamber is connected to the front end module through a second gate valve, and the other end is connected to the transfer chamber through a third gate valve.
本發明還提供一種基板處理系統，其包含：前端模組；傳輸腔；一個或多個整合多功能腔，每個整合多功能腔的一端分別對應連接前端模組，每個整合多功能腔的另一端分別對應連接傳輸腔；標準反應腔，其連接傳輸腔。其中，每個整合多功能腔分別包含：處理腔，其設置在整合多功能腔內上部，其一端連接前端模組，用於在前端模組與處理腔之間傳輸基板，其另一端連接傳輸腔，用於在處理腔與傳輸腔之間傳輸基板；ICP電漿源，其連接處理腔，用於對處理腔內的基板進行製程處理；真空鎖，其設置在整合多功能腔內下部，其一端連接前端模組，用於在真空鎖與前端模組之間傳輸基板，其另一端連接傳輸腔，用於在真空鎖與傳輸腔之間傳輸基板。 The present invention also provides a substrate processing system, comprising: a front end module; a transfer cavity; one or more integrated multi-functional cavities, one end of each integrated multi-function cavity is respectively connected to the front end module, and each integrated multi-function cavity The other end is correspondingly connected to the transmission cavity; the standard reaction cavity is connected to the transmission cavity. Each of the integrated multi-function cavities respectively includes: a processing chamber disposed in an upper portion of the integrated multi-function cavity, and one end of which is connected to the front end module for transmitting the substrate between the front end module and the processing chamber, and the other end is connected and transmitted a cavity for transporting the substrate between the processing chamber and the transfer chamber; an ICP plasma source connected to the processing chamber for processing the substrate in the processing chamber; and a vacuum lock disposed in the lower portion of the integrated multifunctional cavity One end is connected to the front end module for transferring the substrate between the vacuum lock and the front end module, and the other end is connected to the transfer cavity for transferring the substrate between the vacuum lock and the transfer cavity.
較佳地，真空鎖與處理腔通過兩者之間的一隔板相互隔離。 Preferably, the vacuum lock and the processing chamber are isolated from each other by a partition therebetween.
較佳地，ICP電漿源為頂部設有進氣口、底部設有圓柱形注入端的ICP電漿發生器，該注入端下方開口與所述的處理腔連接。 Preferably, the ICP plasma source is an ICP plasma generator having an inlet port at the top and a cylindrical injection end at the bottom, and the lower opening of the injection end is connected to the processing chamber.
較佳地，ICP電漿發生器的注入端下方開口直徑大於基板直徑的一半、且小於基板直徑。 Preferably, the diameter of the opening below the injection end of the ICP plasma generator is greater than half the diameter of the substrate and smaller than the diameter of the substrate.
較佳地，ICP電漿源垂直設置在處理腔的頂部中央。 Preferably, the ICP plasma source is disposed vertically in the center of the top of the processing chamber.
較佳地，處理腔內設有位於底部的基座，用於放置基板，基座內設有加熱裝置。 Preferably, the processing chamber is provided with a base at the bottom for placing the substrate, and a heating device is arranged in the base.
較佳地，處理腔的一端通過第二門閥與前端模組連接，其 另一端通過第三門閥與傳輸腔連接。 Preferably, one end of the processing chamber is connected to the front end module through a second gate valve, The other end is connected to the transfer chamber through a third gate valve.
本發明與習知技術相比具有以下優點：1、將處理腔集成到一個基板處理系統中，並設置在前端模組和傳輸腔之間，使得反應完成的晶圓可以不用再依次反向通過傳輸腔→真空鎖→前端模組以到達另一個基板處理系統進行額外的輔助處理，而直接在本發明中位於真空鎖位置的處理腔進行處理即可，大大減少基板處理的流轉時間；2、在集成了處理腔的基板處理系統中，由於受到剝光製程加工速度的限制從而影響了整個系統的吞吐量，所以將遠程電漿源用圓柱形的ICP電漿源代替，能夠全面提升系統整體吞吐量，並能更快而且均一的實現剝光製程。 Compared with the prior art, the present invention has the following advantages: 1. The processing chamber is integrated into a substrate processing system and disposed between the front end module and the transfer cavity, so that the completed wafer can be reversed without passing through. The transfer chamber→vacuum lock→front module can be used to reach another substrate processing system for additional auxiliary processing, and can be directly processed in the processing chamber of the vacuum lock position in the present invention, thereby greatly reducing the circulation time of the substrate processing; In the substrate processing system with integrated processing chamber, the throughput of the stripping process is limited, which affects the throughput of the whole system. Therefore, replacing the remote plasma source with a cylindrical ICP plasma source can improve the overall system. Throughput, and a faster and uniform stripping process.
1‧‧‧前端模組 1‧‧‧ front-end module
2‧‧‧處理腔 2‧‧‧Processing chamber
3‧‧‧真空鎖 3‧‧‧Vacuum lock
4‧‧‧傳輸腔 4‧‧‧Transport chamber
21‧‧‧ICP電漿發生器 21‧‧‧ICP plasma generator
201‧‧‧第二門閥 201‧‧‧Second gate valve
202‧‧‧基座 202‧‧‧Base
203‧‧‧第三門閥 203‧‧‧third gate valve
204‧‧‧基板 204‧‧‧Substrate
211‧‧‧進氣口 211‧‧‧air inlet
圖1為本發明的基板處理系統的實施例整體結構示意圖；圖2為本發明的ICP電漿源與處理腔的整體結構示意圖。 1 is a schematic overall structural view of an embodiment of a substrate processing system of the present invention; and FIG. 2 is a schematic view showing the overall structure of an ICP plasma source and a processing chamber of the present invention.
以下結合圖式，藉由詳細說明一個較佳的具體實施例，對本發明做進一步闡述。 The invention will be further illustrated by the following detailed description of a preferred embodiment.
如圖1所示，本發明提供的一種整合多功能腔，其位於一基板處理系統中，所述的基板處理系統具有前端模組1和傳輸腔4，其中，所述的整合多功能腔的一端連接所述的前端模組1，其另一端連接所述的傳輸腔4，該整合多功能腔包含：處理腔2，其設置在所述的整合 多功能腔內上部，其一端連接所述的前端模組1，用於在前端模組1與處理腔2之間傳輸基板204，其另一端連接所述的傳輸腔4，用於在處理腔2與傳輸腔4之間傳輸基板204；ICP電漿源，其連接所述的處理腔2，用於對處理腔2內的基板204進行製程處理；真空鎖3，其設置在所述的整合多功能腔內下部，其一端連接所述的前端模組1，用於在真空鎖3與前端模組1之間傳輸基板204，其另一端連接所述的傳輸腔4，用於在真空鎖3與傳輸腔4之間傳輸基板204。 As shown in FIG. 1 , an integrated multi-functional cavity is provided in a substrate processing system, and the substrate processing system has a front end module 1 and a transfer cavity 4, wherein the integrated multi-functional cavity One end of the front end module 1 is connected, and the other end is connected to the transfer cavity 4. The integrated multi-function cavity comprises: a processing chamber 2, which is disposed in the integration The upper part of the multi-function chamber is connected at one end to the front end module 1 for transferring the substrate 204 between the front end module 1 and the processing chamber 2, and the other end is connected to the transfer chamber 4 for processing in the processing chamber 2 and a transfer substrate 4 between the transfer substrate 204; ICP plasma source, which is connected to the processing chamber 2 for processing the substrate 204 in the processing chamber 2; vacuum lock 3, which is disposed in the integration a lower part of the multi-function chamber, one end of which is connected to the front end module 1 for transferring the substrate 204 between the vacuum lock 3 and the front end module 1, and the other end of which is connected to the transfer chamber 4 for vacuum lock The substrate 204 is transferred between the transfer chamber 4 and the transfer chamber 4.
所述的真空鎖3與處理腔2通過位於中間的隔離板藉由兩者之間的一隔板相互隔離，以減少占地面積，使得處理腔2內反應氣體不能洩露到真空鎖3。 The vacuum lock 3 and the processing chamber 2 are separated from each other by a partition plate between the two in order to reduce the footprint, so that the reaction gas in the processing chamber 2 cannot leak to the vacuum lock 3.
在所述的整合多功能腔的兩端分別設置第一門閥。 A first gate valve is respectively disposed at both ends of the integrated multi-function chamber.
如圖2所示，所述的ICP電漿源為頂部設有進氣口211、底部設有圓柱形注入端的ICP電漿發生器21，該注入端下方開口與所述的處理腔2連接，反應氣體(含氧氣體)通過進氣口211噴入ICP電漿發生器21的發生腔，隨後流入下方的處理腔2；本實施例中，所述的ICP電漿發生器21的注入端下方開口直徑大於基板204直徑的一半、且小於基板204直徑；本實施例中，所述處理腔2內設有位於底部的基座202，用於放置基板204，基座202內設有加熱裝置，以達到合適的去光阻劑的溫度(200度左右)；所述處理腔2的一端藉由第二門閥201與所述的前端模組1連接，其另一端通過第三門閥203與所述的傳輸腔4連接，用於基板204在不同環境的進出；所述的ICP電漿發生器21的注入端垂直設置在所述處理腔2的頂部中央。由於ICP電漿源結構較遠程電漿源結構簡單、成本更低，且操作窗口、可選氣壓和氣流範圍也更大，所以在待剝除的光阻劑厚度不同時可以通過選擇不同的製程參數來最佳化反 應速率和剝除製程質量的平衡。習知技術由於採用遠程電漿源激勵反應氣體形成電漿和自由基，最後通過狹小的下方開口將富含自由基的反應氣體送入處理腔，反應氣體擴散均勻需要氣體噴口和下方的基板204間距更大，而且遠程電漿源可選的工作範圍很小，無法優化整體基板處理系統的效率。本發明中向下的電漿注入端大小接近晶圓的直徑，確保了反應氣體到達晶圓時的電漿或者自由基(radical)密度均一性。 As shown in FIG. 2, the ICP plasma source is an ICP plasma generator 21 having an inlet 211 at the top and a cylindrical injection end at the bottom, and the lower opening of the injection end is connected to the processing chamber 2, The reaction gas (oxygen-containing gas) is injected into the generating chamber of the ICP plasma generator 21 through the gas inlet 211, and then flows into the lower processing chamber 2; in this embodiment, the injection end of the ICP plasma generator 21 is below The opening diameter is greater than half of the diameter of the substrate 204 and smaller than the diameter of the substrate 204. In the embodiment, the processing chamber 2 is provided with a base 202 at the bottom for placing the substrate 204, and the base 202 is provided with a heating device. To achieve a suitable temperature of the photoresist (about 200 degrees); one end of the processing chamber 2 is connected to the front end module 1 by a second gate valve 201, and the other end is passed through the third gate valve 203 The transfer chamber 4 is connected for the entry and exit of the substrate 204 in different environments; the injection end of the ICP plasma generator 21 is vertically disposed at the top center of the processing chamber 2. Since the ICP plasma source structure is simpler in structure, lower in cost, and has a larger operating window, optional gas pressure, and gas flow range, it is possible to select different processes when the thickness of the photoresist to be stripped is different. Parameters to optimize the inverse The balance between the rate and the quality of the stripping process. The prior art uses a remote plasma source to excite the reaction gas to form plasma and free radicals, and finally sends a radical-rich reaction gas into the processing chamber through a narrow lower opening, and the reaction gas diffusion uniformly requires a gas nozzle and a substrate 204 below. The spacing is greater and the remote plasma source has a small operating range that does not optimize the efficiency of the overall substrate processing system. In the present invention, the downward plasma injection end is close in size to the diameter of the wafer, ensuring plasma or radical density uniformity when the reaction gas reaches the wafer.
一種基板處理系統，其包含：前端模組1；傳輸腔4；一個或多個上述的整合多功能腔，每個所述整合多功能腔的一端分別對應連接所述的前端模組1，每個所述整合多功能腔的另一端分別對應連接所述的傳輸腔4；標準反應腔，其連接所述的傳輸腔4。 A substrate processing system, comprising: a front end module 1; a transmission cavity 4; one or more integrated multi-functional cavities, and one end of each of the integrated multi-functional cavities is respectively connected to the front end module 1 The other ends of the integrated multi-functional chambers are respectively connected to the transmission chamber 4; a standard reaction chamber, which is connected to the transmission chamber 4.
本發明的基板處理系統的工作原理是：將整合多功能腔大氣端的第一門閥打開，前端模組1中的基板204傳送到真空鎖3，隨後整合多功能腔大氣端的第一門閥關閉，而真空端的第一門閥保持關閉，開啟抽真空泵抽出真空鎖3中的空氣使真空鎖3處於真空狀態，接下來打開真空側第一門閥，基板204依次從真空鎖3傳送到傳輸腔4再到標準反應腔，並在標準反應腔內進行反應，例如蝕刻製程；蝕刻完成的晶圓覆有薄膜需要進行剝除製程，因此晶圓再從標準反應腔傳送到傳輸腔4，整合多功能腔真空端的第一閥門打開，基板204傳送到位於整合多功能腔內上部空間的處理腔2，處理腔2上方ICP電漿源注入處理腔2內，以對晶圓進行剝除光阻劑製程；應當瞭解的是，以上基板204或晶圓的傳送移動均是藉由系統中的傳輸機器人來完成的。 The working principle of the substrate processing system of the present invention is that the first gate valve integrating the atmospheric end of the multi-function chamber is opened, the substrate 204 in the front end module 1 is transferred to the vacuum lock 3, and then the first gate valve integrating the atmospheric end of the multi-function chamber is closed, and The first valve of the vacuum end is kept closed, the vacuum pump is opened, the air in the vacuum lock 3 is taken out to make the vacuum lock 3 in a vacuum state, and then the vacuum side first valve is opened, and the substrate 204 is sequentially transferred from the vacuum lock 3 to the transfer chamber 4 to the standard. The reaction chamber is reacted in a standard reaction chamber, such as an etching process; the etched wafer is covered with a film and needs to be stripped, so that the wafer is transferred from the standard reaction chamber to the transfer chamber 4, and the vacuum chamber of the multi-function chamber is integrated. The first valve is opened, the substrate 204 is transferred to the processing chamber 2 located in the upper space of the integrated multi-function chamber, and the ICP plasma source is injected into the processing chamber 2 above the processing chamber 2 to strip the wafer from the photoresist process; The transfer movement of the above substrate 204 or wafer is performed by a transfer robot in the system.
綜上所述，將處理腔設置在真空鎖位置後大大簡化了基板的流轉時間，使用ICP電漿源後整個系統的處理速度也變得更快。 In summary, setting the processing chamber to the vacuum lock position greatly simplifies the flow time of the substrate, and the processing speed of the entire system is also faster after using the ICP plasma source.
儘管本發明的內容已經藉由上述較佳實施例作了詳細介 紹，但應當理解到上述的描述不應被認為是對本發明的限制。在本發明所屬技術領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由申請專利範圍來限定。 Although the content of the present invention has been described in detail by the above preferred embodiment It is to be understood that the above description should not be taken as limiting the invention. Various modifications and alterations of the present invention will become apparent to those skilled in the <RTIgt; Therefore, the scope of protection of the present invention should be defined by the scope of the patent application.
1‧‧‧前端模組 1‧‧‧ front-end module
2‧‧‧處理腔 2‧‧‧Processing chamber
3‧‧‧真空鎖 3‧‧‧Vacuum lock
4‧‧‧傳輸腔 4‧‧‧Transport chamber
21‧‧‧ICP電漿發生器 21‧‧‧ICP plasma generator
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