TW201724162A - Method for processing target object - Google Patents

Method for processing target object Download PDF

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TW201724162A
TW201724162A TW105131997A TW105131997A TW201724162A TW 201724162 A TW201724162 A TW 201724162A TW 105131997 A TW105131997 A TW 105131997A TW 105131997 A TW105131997 A TW 105131997A TW 201724162 A TW201724162 A TW 201724162A
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film
processing
gas
processing container
etching
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TW105131997A
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TWI709996B (en
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Yoshihide Kihara
Toru Hisamatsu
Masanobu Honda
Tomoyuki Oishi
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

A method for processing a target object includes a formation step of forming a silicon oxide film in a processing chamber by repeatedly executing a sequence including a first step of supplying a first gas containing aminosilane-based gas, a second step of purging a space in the processing chamber after the first step, a third step of generating a plasma of a second gas containing oxygen gas after the second step, and a fourth step of purging the space after the third step. The method further includes a preparation step executed before the target object is accommodated in the processing chamber and a processing step of performing an etching process on the target object. The preparation step is performed before the processing step. The formation step is performed in the preparation step and the processing step. In the first step, a plasma of the first gas is not generated.

Description

被處理體之處理方法 Processing method of processed object

本發明之實施形態係關於一種被處理體之處理方法，尤其關於一種使用電漿來進行半導體基板之表面處理之方法。 Embodiments of the present invention relate to a method of treating a processed object, and more particularly to a method of performing surface treatment of a semiconductor substrate using plasma.

半導體元件等電子元件之製造程序中，有時會使用電漿處理裝置來進行被處理體之電漿處理。電漿處理之一種為電漿蝕刻。進行電漿蝕刻係用以將設置於被蝕刻層上的遮罩圖案轉印於該被蝕刻層。遮罩一般係使用阻劑遮罩。阻劑遮罩係以光微影技術所形成。從而，於被蝕刻層所形成之圖案之極限尺寸係取決於藉由光微影技術所形成之阻劑遮罩之解析度。但是，阻劑遮罩之解析度有解析極限。對於電子元件高積體化之要求日益提高，而需要形成較阻劑遮罩之解析極限來得小尺寸之圖案。因此，如專利文獻1所記載般，提議一種技術，係藉由在阻劑遮罩上形成矽氧化膜來調整該阻劑遮罩之尺寸，來縮小由該阻劑遮罩所提供之開口寬度。 In a manufacturing process of an electronic component such as a semiconductor element, a plasma processing apparatus may be used to perform plasma processing of the object to be processed. One of the plasma treatments is plasma etching. Plasma etching is performed to transfer a mask pattern disposed on the layer to be etched to the layer to be etched. Masks typically use a resist mask. The resist mask is formed by photolithography. Thus, the extreme dimensions of the pattern formed by the etched layer are dependent on the resolution of the resist mask formed by photolithography. However, the resolution of the resist mask has an analytical limit. There is an increasing demand for high integration of electronic components, and it is necessary to form a pattern of smaller size than the resolution limit of the resist mask. Therefore, as described in Patent Document 1, a technique is proposed in which the size of the resist mask is reduced by forming a tantalum oxide film on the resist mask to reduce the width of the opening provided by the resist mask. .

先前技術文獻 Prior technical literature

專利文獻1 日本特開2004-80033號公報 Patent Document 1 Japanese Patent Laid-Open Publication No. 2004-80033

另一方面，近年來電子元件高積體化所伴隨的微細化，在被處理體上之圖案形成方面係要求高精度之最小線寬(CD：Critical Dimension)之控制。再者，從電子元件之量產性觀點來看，也要求長期安定之最小線寬的再現性等。 On the other hand, in recent years, the miniaturization associated with the high integration of electronic components requires control of a minimum precision (CD: Critical Dimension) in terms of pattern formation on a target object. Furthermore, from the viewpoint of mass production of electronic components, reproducibility of minimum line width for long-term stability is also required.

電漿蝕刻中成為最少線寬變動主因，一般可舉出於生成電漿之處理空間 所露出之電漿處理裝置之構成零件(例如產生電漿之處理容器的內壁面、連接於處理容器之各種配管的內壁面等)之表面狀態出現變化，電漿狀態出現變化。露出於處理空間之電漿處理裝置之構成零件的表面狀態出現變化之主因，可舉出電漿之長期使用導致該零件表面被消耗。如此之消耗會造成該零件之表面溫度出現變動，自由基之附著率也因著此表面溫度之變動而變動。 Plasma etching has become the main cause of minimum line width variation, generally can be used to generate plasma processing space. The surface state of the components of the exposed plasma processing apparatus (for example, the inner wall surface of the processing container for generating plasma, the inner wall surface of various pipes connected to the processing container, and the like) changes, and the plasma state changes. The main cause of the change in the surface state of the components of the plasma processing apparatus exposed to the processing space is that the surface of the part is consumed due to long-term use of the plasma. Such consumption causes a change in the surface temperature of the part, and the adhesion rate of the radical changes due to the change in the surface temperature.

此外，電漿處理中，會有發生成為製品缺陷主因的粒子之情況。粒子可從露出於處理空間之電漿處理裝置之構成零件表面產生，附著於晶圓上會導致製品不良。由於粒子附著於圖案上會妨礙轉印，有可能妨礙高精度之最小線寬的實現、以及安定最小線寬之再現性等的實現。 In addition, in the plasma processing, there are cases where particles which are the main cause of product defects occur. The particles may be generated from the surface of the constituent parts of the plasma processing apparatus exposed to the processing space, and adhesion to the wafer may result in defective products. Since the adhesion of the particles to the pattern hinders the transfer, it is possible to hinder the realization of the minimum line width with high precision and the reproducibility of the minimum line width.

基於以上情事，在被處理體上之圖案形成方面，為了伴隨高積體化之微細化，用以實現高精度之最小線寬的控制、以及安定最小線寬之再現性等之方法成為必要。 In view of the above, in order to form a pattern on the object to be processed, it is necessary to control the minimum line width with high precision and the reproducibility of the minimum line width in order to achieve high integration.

一態樣中係提供一種被處理體之處理方法。本態樣之方法具備下述製程：(a)形成製程，係使得包含：第1製程，係對電漿處理裝置之處理容器內供給含胺基矽烷系氣體之第1氣體；第2製程，係於第1製程之實行後沖洗處理容器內之空間；第3製程，係於第2製程之實行後在處理容器內生成含氧氣體之第2氣體的電漿；以及第4製程，係於第3製程之實行後沖洗處理容器內之空間；之序列反覆實行以於處理容器內形成矽氧化膜；(b)準備製程，係於將被處理體收容於處理容器內之前所進行；(c)處理製程，係對收容於處理容器內之被處理體進行蝕刻處理。準備製程係於處理製程之前進行。形成製程係於準備製程中實行、且於處理製程中實行。第1製程不生成第1氣體之電漿。 In one aspect, a method of treating a treated object is provided. The method of the present aspect comprises the following processes: (a) forming a process comprising: a first process for supplying a first gas containing an amine-based decane-based gas to a processing vessel of the plasma processing apparatus; and a second process The space in the processing container is rinsed after the execution of the first process; the third process is the plasma of the second gas containing the oxygen-containing gas in the processing container after the execution of the second process; and the fourth process is in the fourth process. (3) rinsing the space in the processing container after the execution of the process; the sequence is repeated to form a tantalum oxide film in the processing container; (b) preparing the process, before the object to be processed is contained in the processing container; (c) The processing process etches the object to be processed contained in the processing container. The preparation process is performed prior to the processing process. The formation process is carried out in the preparation process and is carried out in the process. The first process does not generate plasma of the first gas.

依據上述方法，於第1製程中，不進行電漿之生成而將含胺基矽烷系氣體之第1氣體供給於處理容器內，此後，於第3製程中，生成含氧氣體之第2氣體的電漿來形成薄膜之矽氧化膜。從而，藉由處理製程中所實行之第1製程~第4製程使得薄膜之矽氧化膜在被處理體之表面來均一、保形地形成。然後，在處理製程所實行之形成製程中，由於反覆實行第1製程~第4製程，而可高精度控制被處理體之表面所形成之矽氧化膜之厚度。從而，可藉由 形成製程所形成之矽氧化膜來高精度降低被處理體之表面的圖案之最小線寬，伴隨高積體化之微細化成為可能。此外，藉由處理製程中所實行之形成製程，於被處理體之表面形成矽氧化膜，再者，對處理容器之內側表面以及連接於處理容器之各種配管的內側表面也以和該矽氧化膜為同樣的厚度來形成矽氧化膜做為保護膜。從而，由於可藉由在處理容器之內側表面以及連接於處理容器之各種配管的內側表面所形成之矽氧化膜來充分抑制從此等各表面產生粒子以及該各表面之狀態變化，而使得安定最小線寬之再現等成為可能。此外，和處理製程所實行之形成製程為獨立地，在處理製程之前所實行之準備製程中也實行形成製程。從而，由於可使得和處理製程中藉由蝕刻所去除之矽氧化膜之厚度對應之所希望之厚度的矽氧化膜在處理容器之內側表面以及連接於處理容器之各種配管之內側表面以保護膜的形式來形成，故可不受到處理製程中所進行之蝕刻程度的影響，來充分抑制從此等各表面所致粒子之產生與該各表面之狀態變化。 According to the above method, in the first process, the first gas containing the amine-based decane-based gas is supplied to the processing container without generating plasma, and thereafter, the second gas containing the oxygen-containing gas is generated in the third process. The plasma is used to form a tantalum oxide film of the film. Therefore, the first oxide to the fourth processing performed in the processing process allows the tantalum oxide film of the film to be uniformly and conformally formed on the surface of the object to be processed. Then, in the forming process carried out by the processing process, since the first to fourth processes are repeatedly performed, the thickness of the tantalum oxide film formed on the surface of the object to be processed can be controlled with high precision. Thus, by The tantalum oxide film formed by the process is formed to reduce the minimum line width of the pattern on the surface of the object to be processed with high precision, and it is possible to reduce the thickness of the integrated body. Further, a tantalum oxide film is formed on the surface of the object to be processed by a forming process carried out in the processing process, and the inner surface of the processing container and the inner surface of each of the pipes connected to the processing container are also oxidized with the tantalum. The film has the same thickness to form a tantalum oxide film as a protective film. Therefore, since the particles generated from the surfaces and the state changes of the surfaces can be sufficiently suppressed by the ruthenium oxide film formed on the inner surface of the processing container and the inner surface of the various tubes connected to the processing container, the stability is minimized. The reproduction of line widths and the like is possible. In addition, the forming process performed by the processing process is independent, and the forming process is also performed in the preparation process performed before the processing process. Therefore, since the desired thickness of the tantalum oxide film corresponding to the thickness of the tantalum oxide film removed by the etching in the process can be made to be on the inner surface of the processing container and the inner surface of the various tubes connected to the processing container as a protective film Since the form is formed, it is possible to sufficiently suppress the generation of particles and the state changes of the respective surfaces from the respective surfaces without being affected by the degree of etching performed in the processing.

於一實施形態中，第1氣體可含單胺基矽烷。從而，可使用含單胺基矽烷之第1氣體來進行形成處理。 In one embodiment, the first gas may contain monoamine decane. Therefore, the formation treatment can be performed using the first gas containing monoamine-based decane.

一實施形態中，第1氣體之胺基矽烷系氣體可含具1~3個矽原子之胺基矽烷。第1氣體之胺基矽烷系氣體可含具1~3個胺基之胺基矽烷。如此般於第1氣體之胺基矽烷系氣體可使用含1~3個矽原子之胺基矽烷。此外，第1氣體之胺基矽烷系氣體可使用含1~3個胺基之胺基矽烷。 In one embodiment, the amine-based decane-based gas of the first gas may contain an amino-based decane having 1 to 3 germanium atoms. The amine-based decane-based gas of the first gas may contain an amino decane having 1 to 3 amine groups. As the amine-based decane-based gas of the first gas, an amino decane having 1 to 3 ruthenium atoms can be used. Further, as the amine-based decane-based gas of the first gas, an amino decane having 1 to 3 amine groups can be used.

於一實施形態，可進而具備於處理製程之後且為將被處理體從處理容器搬出後，將處理容器內所具矽氧化膜加以去除之製程。從而，即便當處理製程之後在處理容器內以及連接於處理容器之各種配管內殘存矽氧化膜之情況，也可從處理容器內以及連接於處理容器之各種配管內確實去除矽氧化膜。 In one embodiment, a process of removing the ruthenium oxide film in the processing container after the process is carried out and after the object to be processed is carried out from the processing container may be further provided. Therefore, even when the ruthenium oxide film remains in the processing container and in various pipes connected to the processing container after the processing, the ruthenium oxide film can be surely removed from the inside of the processing container and the various pipes connected to the processing container.

一實施形態中，被處理體可具備被蝕刻層以及設置於該被蝕刻層上之有機膜；處理製程可具備有藉由處理容器內所產生之電漿來蝕刻有機膜之製程；形成製程於處理製程可在蝕刻有機膜之製程之前所實行；直到蝕刻有機膜之製程之前，於處理容器內所形成之矽氧化膜之膜的厚度可較直到蝕刻有機膜之製程結束為止之矽氧化膜當中被蝕刻去除之膜的厚度來得厚。 從而，即使有機膜之蝕刻結束後，由於在處理容器之內側表面以及連接於處理容器之各種配管之內側表面殘存矽氧化膜，故可避免出現以下之事態、亦即避免蝕刻中矽氧化膜被去除造成此等各表面露出而使得該各表面之狀態發生變化而從該各表面產生粒子等之事態。此外，由於在有機膜蝕刻之實行前進行形成矽氧化膜之形成製程，而可避免因有機膜之蝕刻所生活性種(例如氫自由基)和處理容器之內側表面以及連接於處理容器之各種配管之內側表面起反應，從而，可充分抑制從此等各表面產生粒子以及該各表面之狀態之變化。 In one embodiment, the object to be processed may include an etched layer and an organic film disposed on the etched layer; and the process may include a process of etching the organic film by using a plasma generated in the processing container; The processing process can be performed before the process of etching the organic film; until the process of etching the organic film, the thickness of the film of the germanium oxide film formed in the processing container can be compared to the thickness of the germanium oxide film until the end of the process of etching the organic film. The thickness of the film removed by etching is made thick. Therefore, even after the etching of the organic film is completed, since the ruthenium oxide film remains on the inner surface of the processing container and the inner surface of the various tubes connected to the processing container, the following state can be avoided, that is, the ruthenium oxide film is prevented from being etched during etching. The state in which the surfaces are exposed and the states of the respective surfaces are changed to generate particles or the like from the respective surfaces is removed. In addition, since the formation process of the tantalum oxide film is performed before the organic film etching is performed, the living species (for example, hydrogen radicals) which are etched by the organic film, the inner surface of the processing container, and the various surfaces connected to the processing container can be avoided. The inner surface of the pipe reacts, so that generation of particles from the respective surfaces and changes in the state of the respective surfaces can be sufficiently suppressed.

一實施形態中，直到蝕刻有機膜之製程之前於處理容器內所形成之矽氧化膜之膜的厚度可較被蝕刻層之膜的厚度來得薄。從而，由於在處理容器內以及連接於處理容器之各種配管內所形成之矽氧化膜之厚度較被蝕刻層之膜的厚度來得薄使得處理容器內以及連接於處理容器之各種配管內之矽氧化膜藉由被蝕刻層之蝕刻而去除，故於處理製程之後所進行之處理容器內以及連接於處理容器之各種配管內之潔淨時，將處理容器內以及連接於處理容器之各種配管內之矽氧化膜加以去除之處理將變得不必要。 In one embodiment, the thickness of the film of the tantalum oxide film formed in the processing container until the process of etching the organic film may be thinner than the thickness of the film of the layer to be etched. Therefore, since the thickness of the tantalum oxide film formed in the processing container and the various tubes connected to the processing container is thinner than the thickness of the film of the layer to be etched, the ruthenium in the processing container and the various tubes connected to the processing container are oxidized. Since the film is removed by etching by the etched layer, the inside of the processing container and the various pipes connected to the processing container are cleaned in the processing container and in the various pipes connected to the processing container. The treatment of removing the oxide film will become unnecessary.

一實施形態中，被處理體可具備被蝕刻層以及設置於被蝕刻層上之有機膜；處理製程可具備藉由在處理容器內所產生之電漿來蝕刻有機膜之製程；形成製程於處理製程中可於蝕刻有機膜之製程之前實行；有機膜上可設有第1遮罩；處理製程可進而具有：藉由處理容器內所產生之電漿來將上面具有阻劑遮罩之抗反射膜加以蝕刻而從抗反射膜形成第1遮罩之製程；蝕刻有機膜之製程可於蝕刻抗反射膜之製程之後來實行；於處理製程，形成製程可於蝕刻抗反射膜之製程與蝕刻有機膜之製程之間來實行；處理製程可進而具有：於形成製程與蝕刻有機膜之製程之間，藉由處理容器內所產生之電漿來將藉由形成製程所形成之矽氧化膜當中之有機膜之表面上的區域加以去除之製程。 In one embodiment, the object to be processed may include an etched layer and an organic film disposed on the etched layer; the process may include a process of etching the organic film by using plasma generated in the processing container; and forming a process for processing The process can be performed before the process of etching the organic film; the first mask can be disposed on the organic film; the processing process can further have: anti-reflection with a resist mask on the surface by processing the plasma generated in the container The process of etching the film to form the first mask from the anti-reflection film; the process of etching the organic film can be performed after the process of etching the anti-reflection film; in the process of processing, forming a process for etching the anti-reflection film and etching organic The processing of the film is carried out; the processing process may further comprise: between the process of forming the process and etching the organic film, by processing the plasma generated in the container to form the tantalum oxide film formed by the forming process The process of removing the area on the surface of the organic film.

一實施形態中，被處理體可具備有被蝕刻層、設置於被蝕刻層上之有機膜、以及設置於有機膜上之抗反射膜；處理製程可具備：藉由處理容器內所產生之電漿來蝕刻有機膜之製程；形成製程於處理製程中可於蝕刻有機膜之製程之前來實行；可於抗反射膜上設有第1遮罩；處理製程可包含下述 製程：藉由形成製程在第1遮罩上以及抗反射膜上形成了矽氧化膜之後，利用處理容器內所產生之電漿來將矽氧化膜當中之抗反射膜上之區域與第1遮罩之上面之上之區域加以去除，來形成基於矽氧化膜當中之第1遮罩之側面上之區域的第2遮罩之製程；藉由處理容器內所產生之電漿來去除第1遮罩之製程；以及藉由處理容器內所產生之電漿來蝕刻抗反射膜之製程；蝕刻有機膜之製程可於蝕刻抗反射膜之製程之後來實行，而形成由有機膜所構成之第3遮罩。 In one embodiment, the object to be processed may include an etched layer, an organic film provided on the etched layer, and an anti-reflection film provided on the organic film; and the processing process may include: generating electricity by processing the inside of the container The process of etching the organic film by the slurry; the forming process is performed before the process of etching the organic film in the processing process; the first mask may be disposed on the anti-reflection film; the processing process may include the following Process: After forming a tantalum oxide film on the first mask and the anti-reflection film by forming a process, the plasma generated in the processing container is used to treat the region on the anti-reflection film among the tantalum oxide film and the first mask. The area above the upper surface of the cover is removed to form a second mask based on the area on the side of the first mask in the tantalum oxide film; the first mask is removed by processing the plasma generated in the container The process of the hood; and the process of etching the anti-reflection film by processing the plasma generated in the container; the process of etching the organic film can be performed after the process of etching the anti-reflection film to form the third layer composed of the organic film Mask.

一實施形態中，當形成製程係於處理製程中實行之情況，第1製程中之被處理體之溫度可為攝氏0度以上且為該第1遮罩所含材料之玻璃轉化溫度(玻璃轉化點)以下。從而，當使用單胺基矽烷之情況，由於可將被處理體之溫度設定為攝氏0度以上且為第1遮罩之遮罩材料之玻璃轉化溫度以下之相對低溫來實行第1製程，故加熱晶圓之處理成為不必要。 In one embodiment, when the forming process is performed in the processing process, the temperature of the object to be processed in the first process may be 0 degrees Celsius or more and the glass transition temperature of the material contained in the first mask (glass conversion) Point) below. Therefore, when monoamine-based decane is used, since the temperature of the object to be processed can be set to 0 degrees Celsius or more and the relative temperature of the glass transition temperature of the mask material of the first mask is lower than the glass temperature, the first process is performed. The processing of heating the wafer becomes unnecessary.

如以上說明般，於被處理體上之圖案形成方面，可實現高精度之最小線寬之控制以及安定最小線寬之再現性等，以因應於高積體化所伴隨之微細化。 As described above, in the pattern formation on the object to be processed, it is possible to realize the control of the minimum line width with high precision and the reproducibility of the minimum line width, in order to achieve miniaturization in accordance with the high integration.

10‧‧‧電漿處理裝置 10‧‧‧ Plasma processing unit

12‧‧‧處理容器 12‧‧‧Processing container

12e‧‧‧排氣口 12e‧‧‧Exhaust port

12g‧‧‧搬出入口 12g‧‧‧ moving out of the entrance

14‧‧‧支撐部 14‧‧‧Support

18a‧‧‧第1板 18a‧‧‧1st board

18b‧‧‧第2板 18b‧‧‧2nd board

22‧‧‧直流電源 22‧‧‧DC power supply

23‧‧‧開關 23‧‧‧ switch

24‧‧‧冷媒流路 24‧‧‧Refrigerant flow path

26a,26b‧‧‧配管 26a, 26b‧‧‧ piping

30‧‧‧上部電極 30‧‧‧Upper electrode

32‧‧‧絕緣性遮蔽構件 32‧‧‧Insulating shielding members

34‧‧‧電極板 34‧‧‧Electrode plate

34a‧‧‧氣體噴出孔 34a‧‧‧ gas ejection holes

36‧‧‧電極支撐體 36‧‧‧Electrode support

36a‧‧‧氣體擴散室 36a‧‧‧Gas diffusion chamber

36b‧‧‧氣體通流孔 36b‧‧‧ gas flow hole

36c‧‧‧氣體導入口 36c‧‧‧ gas inlet

38‧‧‧氣體供給管 38‧‧‧ gas supply pipe

40‧‧‧氣體源群 40‧‧‧ gas source group

42‧‧‧閥群 42‧‧‧ valve group

45‧‧‧流量控制器群 45‧‧‧Flow controller group

46‧‧‧沉積屏蔽件 46‧‧‧Sedimentation shield

48‧‧‧排氣板 48‧‧‧Exhaust plate

50‧‧‧排氣裝置 50‧‧‧Exhaust device

52‧‧‧排氣管 52‧‧‧Exhaust pipe

54‧‧‧閘閥 54‧‧‧ gate valve

62‧‧‧第1高頻電源 62‧‧‧1st high frequency power supply

64‧‧‧第2高頻電源 64‧‧‧2nd high frequency power supply

66,68‧‧‧匹配器 66,68‧‧‧matcher

70‧‧‧電源 70‧‧‧Power supply

A1,A2,A3,A4‧‧‧狀態 A1, A2, A3, A4‧‧‧ Status

AL1,AL2‧‧‧抗反射膜 AL1, AL2‧‧‧ anti-reflection film

ALM1,MK11,MK12,MK21,MK22,MK32,MS1,OLM1‧‧‧遮罩 ALM1, MK11, MK12, MK21, MK22, MK32, MS1, OLM1‧‧ ‧ mask

Cnt‧‧‧控制部 Cnt‧‧‧Control Department

EL1,EL2‧‧‧被蝕刻層 EL1, EL2‧‧‧ etched layer

ESC‧‧‧靜電夾頭 ESC‧‧‧Electroic chuck

FR‧‧‧聚焦環 FR‧‧‧ Focus ring

G1‧‧‧第1氣體 G1‧‧‧1st gas

HP‧‧‧加熱器電源 HP‧‧‧heater power supply

HT‧‧‧加熱器 HT‧‧‧heater

LE‧‧‧下部電極 LE‧‧‧ lower electrode

Ly1,Ly2‧‧‧層 Ly1, Ly2‧‧ layer

MT‧‧‧方法 MT‧‧‧ method

OL1,OL2‧‧‧有機膜 OL1, OL2‧‧ organic film

P1‧‧‧第2氣體之電漿 P1‧‧‧2nd gas plasma

PD‧‧‧載置台 PD‧‧‧ mounting table

PF1,SX1,SX2,SXa,SXa1,SXa2‧‧‧保護膜 PF1, SX1, SX2, SXa, SXa1, SXa2‧‧‧ protective film

R11,R12,R21,R22,R31,R32‧‧‧區域 R11, R12, R21, R22, R31, R32‧‧‧ areas

SB1,SB2‧‧‧基板 SB1, SB2‧‧‧ substrate

Sp‧‧‧處理空間 Sp‧‧‧Processing space

W,W1,W2‧‧‧晶圓 W, W1, W2‧‧‧ wafer

圖1係顯示一實施形態之方法的流程圖。 Figure 1 is a flow chart showing a method of an embodiment.

圖2係顯示電漿處理裝置之一例之圖。 Fig. 2 is a view showing an example of a plasma processing apparatus.

圖3係顯示處理容器12之內側之保護膜形成態樣之圖。 Fig. 3 is a view showing a state of formation of a protective film on the inner side of the processing container 12.

圖4係顯示圖1所示晶圓之處理製程一實施形態之相關內容之流程圖。 4 is a flow chart showing the relevant content of an embodiment of the processing process of the wafer shown in FIG. 1.

圖5係顯示圖4所示各製程之實施前以及實施後之被處理體狀態的截面圖。 Fig. 5 is a cross-sectional view showing the state of the object to be processed before and after the execution of each process shown in Fig. 4.

圖6係顯示圖4所示各製程之實施後之被處理體之狀態之截面圖。 Fig. 6 is a cross-sectional view showing the state of the object to be processed after the execution of each process shown in Fig. 4.

圖7係顯示形成圖4所示保護膜之序列中之保護膜形成模樣之示意顯示圖。 Fig. 7 is a schematic view showing the formation of a protective film in the sequence of forming the protective film shown in Fig. 4.

圖8係顯示形成圖4所示保護膜之序列中之電漿生成相關時機圖。 Fig. 8 is a timing chart showing the generation of plasma in the sequence of forming the protective film shown in Fig. 4.

圖9係顯示圖1所示晶圓之處理製程之其他實施形態之相關內容之流程圖。 Figure 9 is a flow chart showing the related content of another embodiment of the processing process of the wafer shown in Figure 1.

圖10係顯示圖9所示各製程之實施前以及實施後之被處理體狀態之截面圖。 Fig. 10 is a cross-sectional view showing the state of the object to be processed before and after the execution of each process shown in Fig. 9.

圖11係顯示圖9所示各製程之實施後之被處理體狀態之截面圖。 Fig. 11 is a cross-sectional view showing the state of the object to be processed after the execution of each process shown in Fig. 9.

圖12係顯示圖9所示各製程之實施後之被處理體狀態之截面圖。 Fig. 12 is a cross-sectional view showing the state of the object to be processed after the execution of each process shown in Fig. 9.

以下，參見圖式針對各種實施形態來詳細說明。此外，各圖式中針對相同或是對應部分係賦予相同符號。 Hereinafter, the drawings will be described in detail with reference to various embodiments. In addition, the same symbols are assigned to the same or corresponding parts in the respective drawings.

圖1係顯示一實施形態之方法之流程圖。圖1所示一實施形態之方法MT係對被處理體(以下也稱為「晶圓」)進行處理之方法。此外，一實施形態之方法MT，可使用單一之電漿處理裝置來實行一連串的製程。 1 is a flow chart showing a method of an embodiment. The method MT of the embodiment shown in Fig. 1 is a method of processing a target object (hereinafter also referred to as "wafer"). Further, in the method MT of an embodiment, a series of processes can be performed using a single plasma processing apparatus.

圖2係顯示電漿處理裝置一例之圖。圖2中係示意顯示在被處理體之處理方法的各種實施形態所能利用之電漿處理裝置10之截面構造。如圖2所示般，電漿處理裝置10為電容耦合型電漿蝕刻裝置。 Fig. 2 is a view showing an example of a plasma processing apparatus. Fig. 2 is a schematic cross-sectional view showing the plasma processing apparatus 10 which can be utilized in various embodiments of the processing method of the object to be processed. As shown in FIG. 2, the plasma processing apparatus 10 is a capacitive coupling type plasma etching apparatus.

電漿處理裝置10具備有：處理容器12、排氣口12e、搬出入口12g、支撐部14、載置台PD、直流電源22、開關23、冷媒流路24、配管26a、配管26b、上部電極30、絕緣性遮蔽構件32、電極板34、氣體噴出孔34a、電極支撐體36、氣體擴散室36a、氣體通流孔36b、氣體導入口36c、氣體供給管38、氣體源群40、閥群42、流量控制器群45、沉積屏蔽件46、排氣板48、排氣裝置50、排氣管52、閘閥54、第1高頻電源62、第2高頻電源64、匹配器66、匹配器68、電源70、控制部Cnt、聚焦環FR、加熱器電源HP、加熱器HT。載置台PD具備有靜電夾頭ESC、下部電極LE。下部電極LE具備有第1板18a、第2板18b。處理容器12係區劃出處理空間Sp。 The plasma processing apparatus 10 includes a processing container 12, an exhaust port 12e, a carry-out port 12g, a support unit 14, a mounting table PD, a DC power source 22, a switch 23, a refrigerant flow path 24, a pipe 26a, a pipe 26b, and an upper electrode 30. The insulating shielding member 32, the electrode plate 34, the gas ejection hole 34a, the electrode support 36, the gas diffusion chamber 36a, the gas passage hole 36b, the gas introduction port 36c, the gas supply pipe 38, the gas source group 40, and the valve group 42 Flow controller group 45, deposition shield 46, exhaust plate 48, exhaust device 50, exhaust pipe 52, gate valve 54, first high frequency power source 62, second high frequency power source 64, matcher 66, matcher 68. Power supply 70, control unit Cnt, focus ring FR, heater power supply HP, heater HT. The mounting table PD includes an electrostatic chuck ESC and a lower electrode LE. The lower electrode LE includes a first plate 18a and a second plate 18b. The processing container 12 is zoned to divide the processing space Sp.

處理容器12具有大致圓筒形狀。處理容器12例如由鋁所構成。處理容器12之內壁面被施以陽極氧化處理。處理容器12被安全接地。 The processing container 12 has a substantially cylindrical shape. The processing container 12 is made of, for example, aluminum. The inner wall surface of the treatment vessel 12 is subjected to anodizing treatment. The processing vessel 12 is safely grounded.

支撐部14於處理容器12之內側係設置於處理容器12之底部上。支撐部14具備有大致圓筒狀之形狀。支撐部14例如由絕緣材料所構成。構成支撐部14之絕緣材料可為石英般含氧物。支撐部14於處理容器12內係從處理容器12之底部往鉛直方向延伸。 The support portion 14 is disposed on the bottom of the processing container 12 on the inner side of the processing container 12. The support portion 14 is provided in a substantially cylindrical shape. The support portion 14 is made of, for example, an insulating material. The insulating material constituting the support portion 14 may be a quartz-like oxygenate. The support portion 14 extends in the vertical direction from the bottom of the processing container 12 in the processing container 12.

載置台PD係設置於處理容器12內。載置台PD被支撐部14所支撐。載置台PD於載置台PD之上面係保持晶圓W(例如圖5所示晶圓W1、圖10所示晶圓W2等，以下同樣)。晶圓W為被處理體。載置台PD具有下部電極LE以及靜電夾頭ESC。 The mounting table PD is disposed in the processing container 12. The mounting table PD is supported by the support portion 14. The mounting table PD holds the wafer W on the upper surface of the mounting table PD (for example, the wafer W1 shown in FIG. 5, the wafer W2 shown in FIG. 10, and the like, the same applies hereinafter). The wafer W is a processed object. The mounting table PD has a lower electrode LE and an electrostatic chuck ESC.

下部電極LE包含第1板18a以及第2板18b。第1板18a以及第2板18b例如由鋁等金屬所構成。第1板18a以及第2板18b具備大致圓盤狀之形狀。第2板18b係設置於第1板18a上。第2板18b係電性連接於第1板18a。 The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of, for example, a metal such as aluminum. The first plate 18a and the second plate 18b have a substantially disk shape. The second plate 18b is provided on the first plate 18a. The second plate 18b is electrically connected to the first plate 18a.

靜電夾頭ESC係設置於第2板18b上。靜電夾頭ESC具有於一對的絕緣層之間或是一對的絕緣片之間配置著導電膜電極之構造。直流電源22經由開關23而電性連接於靜電夾頭ESC之電極。靜電夾頭ESC可藉由來自直流電源22之直流電壓所生庫倫力等靜電力來吸附晶圓W。藉此，靜電夾頭ESC可保持晶圓W。 The electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which a conductive film electrode is disposed between a pair of insulating layers or between a pair of insulating sheets. The DC power source 22 is electrically connected to the electrodes of the electrostatic chuck ESC via the switch 23. The electrostatic chuck ESC can adsorb the wafer W by an electrostatic force such as a Coulomb force generated by a DC voltage from the DC power source 22. Thereby, the electrostatic chuck ESC can hold the wafer W.

聚焦環FR係以包圍晶圓W邊緣以及靜電夾頭ESC的方式配置於第2板18b之周緣部上。聚焦環FR係基於提升蝕刻均一性所設者。聚焦環FR係依據蝕刻對象之膜的材料而從適宜選擇之材料所構成，例如能由石英所構成。 The focus ring FR is disposed on the peripheral edge portion of the second plate 18b so as to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is based on the enhancement of the etching uniformity. The focus ring FR is composed of a material selected from the material of the film to be etched, and can be composed of, for example, quartz.

冷媒流路24係設置於第2板18b之內部。冷媒流路24係構成溫調機構。冷媒流路24係從設置於處理容器12外部之冷凝器單元經由配管26a而被供給冷媒。供給於冷媒流路24之冷媒係經由配管26b而回到冷凝器單元。如此般，冷媒流路24係被循環供給冷媒。藉由控制此冷媒之溫度，來控制被靜電夾頭ESC所支撐之晶圓W的溫度。氣體供給管線28係將來自傳熱氣體供給機構的傳熱氣體例如He氣體供給至靜電夾頭ESC之上面與晶圓W之內面之間。 The refrigerant flow path 24 is provided inside the second plate 18b. The refrigerant flow path 24 constitutes a temperature adjustment mechanism. The refrigerant flow path 24 is supplied with a refrigerant from a condenser unit provided outside the processing container 12 via a pipe 26a. The refrigerant supplied to the refrigerant flow path 24 is returned to the condenser unit via the pipe 26b. In this manner, the refrigerant flow path 24 is circulated and supplied with the refrigerant. The temperature of the wafer W supported by the electrostatic chuck ESC is controlled by controlling the temperature of the refrigerant. The gas supply line 28 supplies a heat transfer gas such as He gas from the heat transfer gas supply means between the upper surface of the electrostatic chuck ESC and the inner surface of the wafer W.

加熱器HT為加熱元件。加熱器HT係例如埋入第2板18b內。加熱器電源HP係連接於加熱器HT。藉由從加熱器電源HP對加熱器HT供給電力，來調整載置台PD之溫度，此外，載置於該載置台PD上之晶圓W的溫度受到調整。此外，加熱器HT可內建於靜電夾頭ESC。 The heater HT is a heating element. The heater HT is embedded in the second plate 18b, for example. The heater power source HP is connected to the heater HT. The heater HT is supplied with electric power from the heater power source HP to adjust the temperature of the mounting table PD, and the temperature of the wafer W placed on the mounting table PD is adjusted. In addition, the heater HT can be built into the electrostatic chuck ESC.

上部電極30在載置台PD之上方係和載置台PD成為對向配置。下部電極LE與上部電極30係相互大致平行設置。上部電極30與下部電極LE之間係提供處理空間Sp。處理空間Sp乃用以對晶圓W進行電漿處理之空間區域。 The upper electrode 30 is disposed opposite to the mounting table PD on the upper side of the mounting table PD. The lower electrode LE and the upper electrode 30 are disposed substantially in parallel with each other. A processing space Sp is provided between the upper electrode 30 and the lower electrode LE. The processing space Sp is a space region for plasma processing the wafer W.

上部電極30係經由絕緣性遮蔽構件32而被支撐於處理容器12之上部。絕緣性遮蔽構件32係由絕緣材料所構成，例如可為石英般之含氧物。上部電極30可包含電極板34以及電極支撐體36。電極板34面向於處理空間Sp。電極板34具備複數氣體噴出孔34a。電極板34於一實施形態可由矽所構成。其他實施形態，電極板34可由氧化矽所構成。 The upper electrode 30 is supported by the upper portion of the processing container 12 via the insulating shielding member 32. The insulating shielding member 32 is made of an insulating material, and may be, for example, an oxygen-containing substance such as quartz. The upper electrode 30 may include an electrode plate 34 and an electrode support 36. The electrode plate 34 faces the processing space Sp. The electrode plate 34 is provided with a plurality of gas ejection holes 34a. In one embodiment, the electrode plate 34 can be constructed of tantalum. In other embodiments, the electrode plate 34 may be composed of yttrium oxide.

電極支撐體36係裝卸自如地支撐電極板34，可由例如鋁等導電性材料所構成。電極支撐體36可具有水冷構造。氣體擴散室36a係設置於電極支撐體36之內部。複數氣體通流孔36b分別連通於氣體噴出孔34a。複數氣體通流孔36b分別從氣體擴散室36a往下方(朝向載置台PD側)延伸。 The electrode support 36 detachably supports the electrode plate 34, and may be made of a conductive material such as aluminum. The electrode support 36 may have a water-cooled configuration. The gas diffusion chamber 36a is provided inside the electrode support 36. The plurality of gas passage holes 36b are respectively communicated with the gas discharge holes 34a. The plurality of gas passage holes 36b extend downward from the gas diffusion chamber 36a (toward the stage PD side).

氣體導入口36c對氣體擴散室36a導入處理氣體。氣體導入口36c設置於電極支撐體36。氣體供給管38係連接於氣體導入口36c。 The gas introduction port 36c introduces a processing gas into the gas diffusion chamber 36a. The gas introduction port 36c is provided in the electrode support 36. The gas supply pipe 38 is connected to the gas introduction port 36c.

氣體源群40係經由閥群42以及流量控制器群45而連接於氣體供給管38。氣體源群40具有複數氣體源。複數氣體源可包含胺基矽烷系氣體源、鹵化矽氣體源、氧氣體源、氫氣體源、氮氣體源、氟碳氣體源、以及稀有氣體源。胺基矽烷系氣體可使用胺基數相對少之分子構造者，例如可使用單胺基矽烷(H3-Si-R(R為含有機而可被取代之胺基))。上述胺基矽烷系氣體(後述第1氣體G1所含氣體)可含有具1~3個矽原子之胺基矽烷，或是可含具1~3個胺基之胺基矽烷。具1~3個矽原子之胺基矽烷可為具1~3個胺基之單矽烷(單胺基矽烷)、具1~3個胺基之二矽烷、或是具1~3個胺基之三矽烷。再者，上述胺基矽烷可具有可被取代之胺基。再者，上述胺基可被甲基、乙基、丙基、以及丁基中任一所取代。再者，上述甲基、乙基、丙基或是丁基可被鹵素所取代。鹵化矽氣體可使用DCS(二氯矽烷)氣體。氟碳氣體可使用CF4氣體、C4F6氣體、C4F8氣體等任意的氟碳氣體。此外，稀有氣體可使用He氣體、Ar氣體等任意的稀有氣體。 The gas source group 40 is connected to the gas supply pipe 38 via the valve group 42 and the flow controller group 45. Gas source group 40 has a plurality of gas sources. The plurality of gas sources may include an amine-based decane-based gas source, a cesium halide gas source, an oxygen gas source, a hydrogen gas source, a nitrogen gas source, a fluorocarbon gas source, and a rare gas source. As the amino decane-based gas, a molecular structure having a relatively small number of amine groups can be used. For example, a monoamino decane (H 3 -Si-R (R is an organic group which can be substituted by an organic group) can be used). The above-described amino decane-based gas (a gas contained in the first gas G1 to be described later) may contain an amino decane having 1 to 3 fluorene atoms or an amino decane having 1 to 3 amine groups. The amino decane having 1 to 3 ruthenium atoms may be monodecane (monoamine decane) having 1 to 3 amine groups, dioxane having 1 to 3 amine groups, or 1 to 3 amine groups. Trioxane. Further, the above aminodecane may have an amine group which may be substituted. Further, the above amine group may be substituted with any of a methyl group, an ethyl group, a propyl group, and a butyl group. Further, the above methyl group, ethyl group, propyl group or butyl group may be substituted by halogen. A DCS (dichloromethane) gas can be used as the hafnium halide gas. As the fluorocarbon gas, any fluorocarbon gas such as CF 4 gas, C 4 F 6 gas or C 4 F 8 gas can be used. Further, as the rare gas, any rare gas such as He gas or Ar gas can be used.

閥群42包含複數閥。流量控制器群45包含質流控制器等複數流量控制器。氣體源群40之複數氣體源分別經由閥群42之對應的閥以及流量控制器群45之對應的流量控制器而連接於氣體供給管38。從而，電漿處理裝置10可將從氣體源群40之複數氣體源中所選擇之一以上的氣體源而來之氣體以個別調整過之流量來供給於處理容器12內。此外，電漿處理裝置10係沿著 處理容器12之內壁來裝卸自如地設有沉積屏蔽件46。沉積屏蔽件46也設置於支撐部14之外周。沉積屏蔽件46係防止於處理容器12附著著蝕刻副產物(沉積物)，可於鋁材被覆Y2O3等陶瓷而構成。沉積屏蔽件除了Y2O3以外也可為例如石英般含氧材料所構成。 The valve block 42 includes a plurality of valves. The flow controller group 45 includes a plurality of flow controllers such as a mass flow controller. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via respective valves of the valve group 42 and corresponding flow controllers of the flow controller group 45. Therefore, the plasma processing apparatus 10 can supply the gas from one or more of the plurality of gas sources of the gas source group 40 to the processing container 12 at an individually adjusted flow rate. Further, the plasma processing apparatus 10 is detachably provided with a deposition shield 46 along the inner wall of the processing container 12. The deposition shield 46 is also disposed on the outer circumference of the support portion 14. The deposition shield 46 is formed by preventing an etching by-product (deposit) from adhering to the processing container 12, and coating the aluminum material with a ceramic such as Y 2 O 3 . The deposition shield may be composed of, for example, a quartz-like oxygen-containing material in addition to Y 2 O 3 .

排氣板48係設置於處理容器12之底部側且為支撐部14與處理容器12之側壁之間。排氣板48例如可藉由於鋁材被覆Y2O3等陶瓷所構成。排氣口12e在排氣板48之下方係設置於處理容器12。排氣裝置50係經由排氣管52而連接於排氣口12e。排氣裝置50具有渦輪分子泵等真空泵，可將處理容器12內之空間減壓至所希望之真空度。搬出入口12g為晶圓W之搬出入口。搬出入口12g設置於處理容器12之側壁。搬出入口12g可藉由閘閥54來開閉。 The exhaust plate 48 is disposed on the bottom side of the processing container 12 and between the support portion 14 and the side wall of the processing container 12. The exhaust plate 48 can be formed, for example, by coating a ceramic such as Y 2 O 3 with aluminum. The exhaust port 12e is provided in the processing container 12 below the exhaust plate 48. The exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a vacuum pump such as a turbo molecular pump, and can decompress the space in the processing container 12 to a desired degree of vacuum. The carry-out port 12g is a carry-in/out port of the wafer W. The carry-out port 12g is provided on the side wall of the processing container 12. The carry-out port 12g can be opened and closed by the gate valve 54.

第1高頻電源62為產生電漿生成用之第1高頻電力的電源，產生27~100〔MHz〕之頻率、一例中為產生40〔MHz〕之高頻電力。第1高頻電源62係經由匹配器66而連接於上部電極30。匹配器66係用以使得第1高頻電源62之輸出阻抗與負荷側(下部電極LE側)之輸入阻抗取得匹配之電路。此外，第1高頻電源62也可經由匹配器66而連接於下部電極LE。 The first high-frequency power source 62 is a power source for generating the first high-frequency power for plasma generation, and generates a frequency of 27 to 100 [MHz], and an example of a high-frequency power of 40 [MHz]. The first high frequency power source 62 is connected to the upper electrode 30 via the matching unit 66. The matching unit 66 is a circuit for matching the output impedance of the first high-frequency power source 62 with the input impedance of the load side (the lower electrode LE side). Further, the first high frequency power source 62 may be connected to the lower electrode LE via the matching unit 66.

第2高頻電源64為用以產生將離子拉引至晶圓W之第2高頻電力、亦即高頻偏壓電力的電源，係產生400〔kHz〕~40.68〔MHz〕之範圍內的頻率、一例中產生3.2〔MHz〕之高頻偏壓電力。第2高頻電源64係經由匹配器68而連接於下部電極LE。匹配器68係使得第2高頻電源64之輸出阻抗與負荷側(下部電極LE側)之輸入阻抗取得匹配之電路。此外，電源70連接於上部電極30。電源70係將電壓(用以將存在於處理空間Sp內之正離子拉入電極板34)施加於上部電極30。一例中，電源70係產生負直流電壓之直流電源。若如此之電壓從電源70施加於上部電極30，則存在於處理空間Sp之正離子會衝撞於電極板34。藉此，從電極板34釋放二次電子以及/或是矽。 The second high-frequency power source 64 is a power source for generating a second high-frequency power that draws ions to the wafer W, that is, a high-frequency bias power, and is generated in a range of 400 [kHz] to 40.68 [MHz]. In the case of one frequency, a high frequency bias power of 3.2 [MHz] is generated. The second high frequency power source 64 is connected to the lower electrode LE via the matching unit 68. The matching unit 68 is a circuit that matches the output impedance of the second high-frequency power source 64 with the input impedance of the load side (the lower electrode LE side). Further, a power source 70 is connected to the upper electrode 30. The power source 70 applies a voltage (to pull positive ions existing in the processing space Sp into the electrode plate 34) to the upper electrode 30. In one example, the power source 70 is a DC power source that generates a negative DC voltage. When such a voltage is applied from the power source 70 to the upper electrode 30, the positive ions existing in the processing space Sp collide with the electrode plate 34. Thereby, secondary electrons and/or ruthenium are released from the electrode plate 34.

控制部Cnt為具備處理器、記憶部、輸入裝置、顯示裝置等之電腦，控制電漿處理裝置10之各部。具體而言，控制部Cnt係連接於閥群42、流量控制器群45、排氣裝置50、第1高頻電源62、匹配器66、第2高頻電源64、匹配器68、電源70、加熱器電源HP、以及冷凝器單元。 The control unit Cnt is a computer including a processor, a memory unit, an input device, a display device, and the like, and controls each unit of the plasma processing apparatus 10. Specifically, the control unit Cnt is connected to the valve group 42, the flow controller group 45, the exhaust device 50, the first high-frequency power source 62, the matching unit 66, the second high-frequency power source 64, the matching unit 68, the power source 70, Heater power supply HP, and condenser unit.

控制部Cnt係依據基於所輸入之配方的程式而動作，送出控制訊號。可 藉由來自控制部Cnt之控制訊號來控制從氣體源群所供給之氣體的選擇以及流量、排氣裝置50之排氣、來自第1高頻電源62以及第2高頻電源64之電力供給、來自電源70之電壓施加、加熱器電源HP之電力供給、來自冷凝器單元之冷媒流量以及冷媒溫度。此外，本說明書中所揭示之被處理體之處理方法的各製程可藉由控制部Cnt之控制使得電漿處理裝置10之各部產生動作而實行之。 The control unit Cnt operates in response to a program based on the entered recipe, and sends a control signal. can The selection of the gas supplied from the gas source group and the flow rate, the exhaust of the exhaust device 50, and the power supply from the first high-frequency power source 62 and the second high-frequency power source 64 are controlled by the control signal from the control unit Cnt. The voltage is applied from the power source 70, the power supply to the heater power source HP, the refrigerant flow rate from the condenser unit, and the refrigerant temperature. Further, each of the processes of the processing method of the object to be processed disclosed in the present specification can be carried out by causing the respective portions of the plasma processing apparatus 10 to operate by the control of the control unit Cnt.

再次參見圖1，針對方法MT來詳細說明。以下，針對於方法MT之實施上使用電漿處理裝置10之例來說明。此外，以下之說明中係參見圖3、圖4、圖5、圖9、圖10。圖3係顯示處理容器12之內側的保護膜形成之態樣之圖。圖4係顯示圖1所示晶圓之處理製程之一實施形態之相關內容之流程圖。圖5係顯示圖4所示各製程之實施前以及實施後之被處理體之狀態之截面圖。圖9係顯示圖1所示晶圓之處理製程之其他實施形態之相關內容之流程圖。圖10係顯示圖9所示各製程之實施前以及實施後之被處理體之狀態之截面圖。 Referring again to Figure 1, a detailed description will be given for the method MT. Hereinafter, an example in which the plasma processing apparatus 10 is used in the implementation of the method MT will be described. In addition, in the following description, reference is made to FIG. 3, FIG. 4, FIG. 5, FIG. 9, and FIG. Fig. 3 is a view showing a state in which a protective film on the inner side of the processing container 12 is formed. 4 is a flow chart showing the relevant content of one embodiment of the processing process of the wafer shown in FIG. 1. Fig. 5 is a cross-sectional view showing the state of the object to be processed before and after the execution of each process shown in Fig. 4. Figure 9 is a flow chart showing the related content of another embodiment of the processing process of the wafer shown in Figure 1. Fig. 10 is a cross-sectional view showing the state of the object to be processed before and after the execution of each process shown in Fig. 9.

圖1所示方法MT，首先，於製程S1中，在處理容器12之載置台PD載置仿真晶圓，對處理容器12內實施風乾(seasoning)處理，風乾處理之實施後從處理容器12內搬出仿真晶圓。製程S1中，如圖3之狀態A1所示般，位於處理容器12內側之電漿處理裝置10之全部構成零件的表面(例如產生電漿之處理容器12之內壁面、連接於處理容器12之氣體供給管38等各種配管的內壁面等，以下同樣)係露出於處理空間Sp。連接於處理容器12之氣體供給管38等各種配管也連通於處理空間Sp，從而對處理空間Sp露出。 In the method MT shown in FIG. 1, first, in the process S1, a dummy wafer is placed on the mounting table PD of the processing container 12, and a seasoning process is performed on the inside of the processing container 12, and the air-drying process is performed from the processing container 12 after the air-drying process is performed. Move out the simulated wafer. In the process S1, as shown in the state A1 of FIG. 3, the surface of all the components of the plasma processing apparatus 10 located inside the processing container 12 (for example, the inner wall surface of the processing container 12 for generating plasma, and the processing container 12 are connected thereto). The inner wall surface of each of the pipes such as the gas supply pipe 38 and the like are exposed to the processing space Sp in the following manner. Various pipes such as the gas supply pipe 38 connected to the processing container 12 are also communicated with the processing space Sp to expose the processing space Sp.

於後續製程S2(準備製程)中，在將做為被處理體之晶圓W搬入處理容器12內之前，對於露出在處理空間Sp等之電漿處理裝置10之全部構成零件的表面來形成屬矽氧化膜(SiO2)之保護膜SXa1。在製程S2所進行之保護膜SXa1之形成製程可藉由和圖4所示序列SQ1以及圖9所示序列SQ2為同樣序列來實施。序列SQ1以及序列SQ2包含在做為矽氧化膜(SiO2)之保護膜(序列SQ1之情況為保護膜SX1，序列SQ2之情況為保護膜SX2。)之形成製程中，而包含在下述之製程S4(處理製程)中。關於製程S2所進行之保護膜SXa1之形成製程係於序列SQ1之說明以及序列SQ2之說明中來詳細說明。如圖3之狀態A2所示般，藉由在製程S2所實施之保護膜SXa1之形成製程，保護膜 SXa1會對於露出在處理空間Sp之電漿處理裝置10之全部構成零件的表面以(不受到該表面形狀之影響的方式以均一厚度(LC1)來保形地形成。 In the subsequent process S2 (preparation process), before the wafer W as the object to be processed is carried into the processing container 12, the genus is formed on the surface of all the components of the plasma processing apparatus 10 exposed to the processing space Sp or the like. A protective film SXa1 of a tantalum oxide film (SiO 2 ). The formation process of the protective film SXa1 performed in the process S2 can be carried out by the same sequence as the sequence SQ1 shown in FIG. 4 and the sequence SQ2 shown in FIG. The sequence SQ1 and the sequence SQ2 are included in the formation process of the protective film of the tantalum oxide film (SiO 2 ) (the protective film SX1 in the case of the sequence SQ1 and the protective film SX2 in the case of the sequence SQ2), and are included in the process described below. In S4 (Processing Process). The formation process of the protective film SXa1 by the process S2 is described in detail in the description of the sequence SQ1 and the description of the sequence SQ2. As shown in the state A2 of FIG. 3, the protective film SXa1 is formed on the surface of all the constituent parts of the plasma processing apparatus 10 exposed in the processing space Sp by the formation process of the protective film SXa1 performed in the process S2 (not The manner affected by the shape of the surface is conformally formed with a uniform thickness (LC1).

於後續製程S3，將被處理體之晶圓W(圖5(a)部所示晶圓W1或是圖10(a)部所示晶圓W2)搬入處理容器12內，載置於處理容器12內之載置台PD。 In the subsequent process S3, the wafer W of the object to be processed (the wafer W1 shown in FIG. 5(a) or the wafer W2 shown in FIG. 10(a)) is carried into the processing container 12, and placed in the processing container. The PD PD in 12 is placed.

於後續製程S4(處理製程)，對於收容在處理容器12內之晶圓W實施蝕刻處理。製程S4之具體的處理內容之一實施形態如圖4所示，將於後述。製程S4之具體的處理內容之其他實施形態如圖9所示，將於後述。在製程S4所含序列SQ1(圖4)中當保護膜SX1形成於晶圓W1(圖5)之時、或是在製程S4所含序列SQ2(圖9)中當保護膜SX2形成於晶圓W2(圖10)之時，如圖3之狀態A3所示般，屬矽氧化膜(SiO2)之保護膜SXa2可對於保護膜SXa1之表面全體以不受到保護膜SXa1之該表面形狀的影響的方式而以均一厚度(LC2a)來保形地形成。保護膜SXa1與保護膜SXa2皆由矽氧化膜所構成，具有相同材料以及相同構造，保護膜SXa1與保護膜SXa2係構成單一之保護膜SXa。保護膜SXa具有均一厚度(LC1+LC2a)。從而，保護膜SXa對於露出在處理空間Sp等之電漿處理裝置10之全部構成零件的表面能以不受到該表面形狀之影響的方式而以均一厚度(LC2a)來保形地形成。 In the subsequent process S4 (processing process), the wafer W accommodated in the processing container 12 is subjected to an etching process. An embodiment of the specific processing content of the process S4 is as shown in FIG. 4 and will be described later. Other embodiments of the specific processing contents of the process S4 are as shown in FIG. 9 and will be described later. In the sequence SQ1 (FIG. 4) included in the process S4, when the protective film SX1 is formed on the wafer W1 (FIG. 5) or in the sequence SQ2 (FIG. 9) included in the process S4, the protective film SX2 is formed on the wafer. At the time of W2 (Fig. 10), as shown in the state A3 of Fig. 3, the protective film SXa2 which is an antimony oxide film (SiO2) can be affected by the surface shape of the protective film SXa1 without being affected by the surface shape of the protective film SXa1. In a manner, it is formed conformally in a uniform thickness (LC2a). Both the protective film SXa1 and the protective film SXa2 are composed of a tantalum oxide film, and have the same material and the same structure. The protective film SXa1 and the protective film SXa2 constitute a single protective film SXa. The protective film SXa has a uniform thickness (LC1+LC2a). Therefore, the protective film SXa is formed in a conformal shape with a uniform thickness (LC2a) so as not to be affected by the surface shape of all the components of the plasma processing apparatus 10 exposed to the processing space Sp or the like.

然後，於後續製程S5，從處理容器12內搬出晶圓W。後續製程S6中，將在處理容器12之內側以及連接於處理容器12之氣體供給管38等各種配管之內側所殘存之保護膜SXa予以去除。藉由此處理，如圖3之狀態A4所示般，處理空間Sp中電漿處理裝置10之全部構成零件之表面相對於處理空間Sp係全部露出。此外，當製程S4中進行保護膜SXa被全部去除之蝕刻處理的情況，製程S6之實施將成為不必要。 Then, in the subsequent process S5, the wafer W is carried out from the processing container 12. In the subsequent process S6, the protective film SXa remaining inside the processing container 12 and the inside of various pipes connected to the gas supply pipe 38 of the processing container 12 is removed. By this processing, as shown in the state A4 of FIG. 3, the surfaces of all the components of the plasma processing apparatus 10 in the processing space Sp are all exposed with respect to the processing space Sp. Further, in the case where the etching process of the protective film SXa is completely removed in the process S4, the execution of the process S6 becomes unnecessary.

後續製程S7中，當對於其他晶圓進行製程S2~製程S6之序列之情況(製程S7：NO)係移往製程S2，當無進行製程S2~製程S6之序列的其他晶圓之情況(製程S7：YES)乃結束方法MT之實行。 In the subsequent process S7, when the sequence of the process S2 to the process S6 is performed for other wafers (process S7: NO) is transferred to the process S2, when there is no other wafer in the sequence of the process S2 to the process S6 (process) S7: YES) is the end of the method MT.

其次，參見圖4來詳細說明圖1之製程S4之處理內容之一實施形態。於以下之說明中係參見圖5、圖6、圖7、圖8。圖6係顯示圖4所示方法之各製程之實施後之被處理體狀態之截面圖。圖7係示意顯示圖4所示形成保護膜之序列中之保護膜之形成模樣之圖。圖8係關於形成圖4所示保護膜之序列中 之電漿生成之時機圖。 Next, an embodiment of the processing of the process S4 of Fig. 1 will be described in detail with reference to Fig. 4 . See Figure 5, Figure 6, Figure 7, and Figure 8 for the following description. Fig. 6 is a cross-sectional view showing the state of the object to be processed after the execution of each process of the method shown in Fig. 4. Fig. 7 is a view schematically showing the formation of a protective film in the sequence of forming the protective film shown in Fig. 4. Figure 8 is a view showing the formation of the protective film shown in Figure 4 The timing of the plasma generation.

製程S1、S2、S3之處理後之製程S4如圖4所示。首先，於製程S41a中，做為圖2所示晶圓W係準備圖5(a)部所示晶圓W1。在製程S41a中所準備之晶圓W1如圖5(a)部所示般具有基板SB1、被蝕刻層EL1、有機膜OL1、抗反射膜AL1、以及遮罩MK11。被蝕刻層EL1係設置於基板SB1上。被蝕刻層EL1為相對於有機膜OL1受到選擇性蝕刻之材料所構成之層，係使用絕緣膜。被蝕刻層EL1例如可由氧化矽(SiO2)所構成。被蝕刻層EL1具有厚度LD。此外，被蝕刻層EL1可從多晶矽等其他材料所構成。 The process S4 after the processing of the processes S1, S2, and S3 is as shown in FIG. First, in the process S41a, the wafer W1 shown in Fig. 5 (a) is prepared as the wafer W shown in Fig. 2 . The wafer W1 prepared in the process S41a has a substrate SB1, an etched layer EL1, an organic film OL1, an anti-reflection film AL1, and a mask MK11 as shown in Fig. 5(a). The layer to be etched EL1 is provided on the substrate SB1. The layer to be etched EL1 is a layer composed of a material selectively etched with respect to the organic film OL1, and an insulating film is used. The layer to be etched EL1 can be composed, for example, of yttrium oxide (SiO 2 ). The layer to be etched EL1 has a thickness LD. Further, the layer to be etched EL1 may be composed of other materials such as polysilicon.

有機膜OL1設置於被蝕刻層EL1上。有機膜OL1為含碳之層，例如為SOH(旋塗硬遮罩)層。抗反射膜AL1為含矽之抗反射膜，設置於有機膜OL1上。 The organic film OL1 is disposed on the layer to be etched EL1. The organic film OL1 is a carbon-containing layer, for example, an SOH (spin-coated hard mask) layer. The anti-reflection film AL1 is an anti-reflection film containing antimony and is provided on the organic film OL1.

遮罩MK11係設置於抗反射膜AL1上。遮罩MK11為由阻劑材料所構成之阻劑遮罩，係藉由光微影技術使得阻劑層被圖案化所製作。遮罩MK11係部分覆蓋著抗反射膜AL1。遮罩MK11係區劃出使得抗反射膜AL1部分性露出之開口。遮罩MK11之圖案為例如線-空間圖案。此外，遮罩MK11可具有提供俯視上為圓形開口的圖案。或是，遮罩MK11可具有提供俯視上橢圓形狀開口的圖案。 The mask MK11 is disposed on the anti-reflection film AL1. The mask MK11 is a resist mask composed of a resist material, and is formed by patterning a resist layer by photolithography. The mask MK11 is partially covered with an anti-reflection film AL1. The mask MK11 lined out an opening that partially exposes the anti-reflection film AL1. The pattern of the mask MK11 is, for example, a line-space pattern. Further, the mask MK11 may have a pattern that provides a circular opening in a plan view. Alternatively, the mask MK11 may have a pattern that provides an elliptical shaped opening in plan view.

製程S41a係準備圖5(a)部所示晶圓W1，晶圓W1被收容在電漿處理裝置10之處理容器12內，載置於載置台PD上。 In the process S41a, the wafer W1 shown in FIG. 5(a) is prepared, and the wafer W1 is housed in the processing container 12 of the plasma processing apparatus 10, and placed on the mounting table PD.

接續於製程S41a，實行製程S41b。製程S41b中，對晶圓W1照射二次電子。具體而言，對處理容器12內供給氫氣體以及稀有氣體，自第1高頻電源62供給高頻電力，以生成電漿。此外，藉由電源70對上部電極30施加負直流電壓。藉此，處理空間Sp中之正離子被拉入上部電極30，該正離子會衝撞於上部電極30。若正離子衝撞於上部電極30，則自上部電極30釋放二次電子。若所釋放之二次電子照射於晶圓W1，則遮罩MK11受到改質。此外，當施加於上部電極30之負直流電壓之絕對值等級高的情況，則正離子衝撞於電極板34會使得該電極板34之構成材料亦即矽連同二次電子被釋放。所釋放之矽會和暴露於電漿中之電漿處理裝置10之構成零件所釋放之氧產生結合。該氧例如從支撐部14、絕緣性遮蔽構件32、以及沉積屏蔽件46等構 件被釋放。藉由如此之矽與氧之結合會生成氧化矽化合物，該氧化矽化合物會沉積於晶圓W1上而覆蓋保護遮罩MK11。藉由此等改質與保護之效果，可抑制後續製程所致遮罩MK11之損傷。此外，製程S41b中為了藉由二次電子之照射來達到改質、保護膜之形成，也可將第2高頻電源64之偏壓電力最小化來抑制矽的釋放。 Following the process S41a, a process S41b is performed. In the process S41b, the wafer W1 is irradiated with secondary electrons. Specifically, hydrogen gas and rare gas are supplied into the processing container 12, and high-frequency power is supplied from the first high-frequency power source 62 to generate plasma. Further, a negative DC voltage is applied to the upper electrode 30 by the power source 70. Thereby, the positive ions in the processing space Sp are pulled into the upper electrode 30, and the positive ions collide with the upper electrode 30. When the positive ions collide with the upper electrode 30, secondary electrons are released from the upper electrode 30. If the released secondary electrons are irradiated onto the wafer W1, the mask MK11 is modified. Further, when the absolute value of the negative DC voltage applied to the upper electrode 30 is high, the collision of the positive ions with the electrode plate 34 causes the constituent material of the electrode plate 34, that is, the enthalpy together with the secondary electrons to be released. The released helium will combine with the oxygen released by the constituent parts of the plasma processing apparatus 10 exposed to the plasma. The oxygen is configured, for example, from the support portion 14, the insulating shielding member 32, and the deposition shield 46. The pieces are released. By combining the ruthenium with oxygen, a ruthenium oxide compound is formed, which is deposited on the wafer W1 to cover the protective mask MK11. By the effect of such modification and protection, the damage of the mask MK11 caused by the subsequent process can be suppressed. Further, in the process S41b, in order to achieve reformation and formation of a protective film by irradiation of secondary electrons, the bias power of the second high-frequency power source 64 can be minimized to suppress the release of ruthenium.

後續製程S41c中係蝕刻抗反射膜AL1。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將含氟碳氣體之處理氣體供給於處理容器12內。然後，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50進行動作，將處理容器12內之空間壓力設定為既定壓力。藉此生成氟碳氣體之電漿。所生成之電漿中含氟之活性種會將抗反射膜AL1之全區域當中從遮罩MK11露出之區域加以蝕刻。藉此，如圖5(b)部所示般，從抗反射膜AL1形成遮罩ALM1。對於由製程S41c所形成之有機膜OL1的遮罩(第1遮罩)具有遮罩MK11與遮罩ALM1。 The anti-reflection film AL1 is etched in the subsequent process S41c. Specifically, the processing gas of the fluorine-containing carbon gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. Then, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by operating the exhaust device 50. Thereby, a plasma of a fluorocarbon gas is generated. The fluorine-containing active species in the generated plasma etches the region of the entire area of the anti-reflection film AL1 exposed from the mask MK11. Thereby, as shown in part (b) of FIG. 5, the mask ALM1 is formed from the anti-reflection film AL1. The mask (first mask) of the organic film OL1 formed by the process S41c has a mask MK11 and a mask ALM1.

後續製程S41d中，和製程S41b之方法同樣，於遮罩MK11之表面、遮罩ALM1之表面、有機膜OL1之表面形成氧化矽之保護膜(保護膜PF1)。 In the subsequent process S41d, similarly to the method of the process S41b, a protective film (protective film PF1) of ruthenium oxide is formed on the surface of the mask MK11, the surface of the mask ALM1, and the surface of the organic film OL1.

接續於製程S41d，在圖4所示製程S4中係使得序列SQ1實行一次以上。序列SQ1包含製程S41e(第1製程)、製程S41f(第2製程)、製程S41g(第3製程)以及製程S41h(第4製程)。製程S41e係對於處理容器12內導入含矽之第1氣體G1。第1氣體G1係胺基矽烷系氣體。從氣體源群40之複數氣體源當中所選擇之氣體源來將胺基矽烷系氣體之第1氣體G1供給於處理容器12內。第1氣體G1在胺基矽烷系氣體方面係使用單胺基矽烷(H3-Si-R(R為胺基))。製程S41e並未生成第1氣體G1之電漿。 Following the process S41d, the sequence SQ1 is caused to be executed more than once in the process S4 shown in FIG. The sequence SQ1 includes a process S41e (first process), a process S41f (second process), a process S41g (third process), and a process S41h (fourth process). The process S41e introduces the first gas G1 containing ruthenium into the processing container 12. The first gas G1 is an amine decane-based gas. The first gas G1 of the amino decane-based gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. The first gas G1 is a monoamino decane (H 3 -Si-R (R is an amine group)) in terms of an amino decane-based gas. The process S41e does not generate the plasma of the first gas G1.

如圖7(a)部所示般，第1氣體G1之分子係做為反應前驅體附著於晶圓W1之表面。第1氣體G1之分子(單胺基矽烷)係藉由基於化學鍵結之化學吸附來附著於晶圓W1之表面，並未使用電漿。製程S41e中，晶圓W1之溫度為攝氏0度以上且為遮罩MK11所含材料之玻璃轉化溫度以下(例如攝氏200度以下)之程度。此外，只要是在該溫度範圍可藉由化學鍵結來附著於表面且含矽者，則也可利用單胺基矽烷以外之氣體。關於二胺基矽烷(H2-Si-R2(R為胺基))以及三胺基矽烷(H-Si-R3(R為胺基))由於具有較單胺基矽烷來得複 雜之分子構造，故做為第1氣體G1來使用之情況為了實現均一膜的形成有時為了讓胺基自分解而進行熱處理。 As shown in Fig. 7 (a), the molecular system of the first gas G1 is attached to the surface of the wafer W1 as a reaction precursor. The molecule of the first gas G1 (monoamine decane) is attached to the surface of the wafer W1 by chemical adsorption by chemical bonding, and no plasma is used. In the process S41e, the temperature of the wafer W1 is 0 degrees Celsius or more and is equal to or less than the glass transition temperature of the material of the mask MK11 (for example, 200 degrees Celsius or less). Further, a gas other than monoamine-based decane may be used as long as it is bonded to the surface by chemical bonding in this temperature range. Regarding diamino decane (H 2 -Si-R 2 (R is an amine group)) and triamine decane (H-Si-R 3 (R is an amine group)), a complex molecule having a smaller amino group decane Since it is used as the first gas G1, in order to realize formation of a uniform film, heat treatment may be performed in order to self-decompose the amine group.

第1氣體G1選擇單胺基矽烷系氣體之理由是因為單胺基矽烷因其所具有之分子構造而具有相對高的負電度且具有極性，可使得化學吸附相對容易進行。第1氣體G1之分子附著於晶圓W1之表面所形成之層Ly1，由於該附著為化學吸附故成為接近單分子層(單層)之狀態。單胺基矽烷之胺基(R)愈小，則吸附於晶圓W1之表面的分子之分子構造愈小，故起因於分子大小之立體障害會降低，從而第1氣體G1之分子可均一吸附於晶圓W1之表面，層Ly1相對於晶圓W1之表面能以均一膜厚來形成。例如，第1氣體G1所含單胺基矽烷(H3-Si-R)和晶圓W1之表面的OH基起反應會形成反應前驅體之H3-Si-O，從而形成H3-Si-O之單分子層亦即層Ly1。從而，反應前驅體之層Ly1相對於晶圓W1之表面能不依存於晶圓W1之圖案密度而以均一膜厚來保形地形成。 The reason why the first gas G1 selects the monoamine-based decane-based gas is because the mono-amino decane has a relatively high degree of negative electric power and has a polarity due to the molecular structure thereof, and chemical adsorption can be relatively easily performed. The layer of the first gas G1 adheres to the layer Ly1 formed on the surface of the wafer W1, and since the adhesion is chemical adsorption, it is in a state close to the monolayer (single layer). The smaller the amine group (R) of the monoamino decane, the smaller the molecular structure of the molecule adsorbed on the surface of the wafer W1, so that the steric hindrance due to the molecular size is reduced, so that the molecules of the first gas G1 can be uniformly adsorbed. On the surface of the wafer W1, the layer Ly1 can be formed with a uniform film thickness with respect to the surface of the wafer W1. For example, the monoamine decane (H 3 -Si-R) contained in the first gas G1 reacts with the OH group on the surface of the wafer W1 to form H 3 -Si-O of the reaction precursor, thereby forming H 3 -Si. The monolayer of -O is also the layer Ly1. Therefore, the layer Ly1 of the reaction precursor is formed conformally with respect to the surface energy of the wafer W1 in a uniform film thickness irrespective of the pattern density of the wafer W1.

製程S41e中，不光是對於晶圓W1之表面、也對於露出在處理容器12之處理空間Sp等(包含連接於處理容器12之各種配管的內側)之保護膜SXa1之表面，藉由第1氣體G1而在形成層Ly1之同時也使得和層Ly1為同樣的層(單分子層)不受保護膜SXa1之表面形狀的影響而以均一膜厚來保形地形成。 In the process S41e, not only the surface of the wafer W1 but also the surface of the protective film SXa1 exposed to the processing space Sp of the processing container 12 (including the inside of various pipes connected to the processing container 12), the first gas is used. G1 forms the layer Ly1 at the same time as the layer Ly1 is the same layer (monolayer), and is formed conformally with a uniform film thickness without being affected by the surface shape of the protective film SXa1.

後續製程S41f中係對處理容器12內之空間進行沖洗。具體而言，於製程S41e中所供給之第1氣體G1受到排氣。製程S41f中，做為沖洗氣體也可將氮氣體等惰性氣體供給於處理容器12。亦即，製程S41f之沖洗可為使得惰性氣體流入處理容器12內之氣體沖洗、或是基於抽真空之沖洗。製程S41f中，也可將過度地附著於晶圓W1上之分子加以去除。藉由以上方式，反應前驅體之層Ly1會成為極薄的單分子層。 The space in the processing container 12 is flushed in the subsequent process S41f. Specifically, the first gas G1 supplied in the process S41e is exhausted. In the process S41f, an inert gas such as a nitrogen gas may be supplied to the processing container 12 as a flushing gas. That is, the flushing of the process S41f may be a flushing of the gas into which the inert gas flows into the processing vessel 12, or a flushing based on vacuuming. In the process S41f, molecules excessively attached to the wafer W1 can also be removed. By the above manner, the layer Ly1 of the reaction precursor becomes an extremely thin monolayer.

後續製程S41g中，在處理容器12內生成含氧氣體之第2氣體的電漿P1。製程S41g中，生成第2氣體之電漿P1之際的晶圓W1之溫度為攝氏0度以上且為遮罩MK11所含材料之玻璃轉化溫度以下(例如攝氏200度以下)。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將含氧氣體之第2氣體供給於處理容器12內。此外，從第1高頻電源62供給高頻電力。於此情況，也可施加第2高頻電源64之偏壓電力。此外，也可不使用第1高頻電源62而 僅使用第2高頻電源64來生成電漿。藉由使得排氣裝置50動作，將處理容器12內之空間壓力設定為既定壓力。 In the subsequent process S41g, the plasma P1 of the second gas containing the oxygen gas is generated in the processing container 12. In the process S41g, the temperature of the wafer W1 when the plasma P1 of the second gas is generated is 0 degrees Celsius or more and is equal to or lower than the glass transition temperature of the material contained in the mask MK11 (for example, 200 degrees Celsius or less). Specifically, the second gas containing the oxygen-containing gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. Further, high frequency power is supplied from the first high frequency power source 62. In this case, the bias power of the second high-frequency power source 64 can also be applied. In addition, the first high frequency power source 62 may not be used. The plasma is generated using only the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by operating the exhaust device 50.

藉由上述製程S41e之實行而附著於晶圓W1表面的分子(構成層Ly1之單分子層之分子)係含矽與氫之鍵結。矽與氫之鍵結能量低於矽與氧之鍵結能量。從而，如圖7(b)部所示般，若生成含氧氣體之第2氣體之電漿P1，會生成氧活性種(例如氧自由基)，構成層Ly1之單分子層的分子氫會被氧所取代，如圖7(c)部所示般，屬矽氧化膜之層Ly2係以單分子層來形成。 The molecules attached to the surface of the wafer W1 (the molecules constituting the monolayer of the layer Ly1) by the execution of the above-described process S41e contain a bond of hydrazine and hydrogen. The bond energy of helium and hydrogen is lower than the bond energy of helium and oxygen. Therefore, as shown in part (b) of FIG. 7 , when the plasma P1 of the second gas containing the oxygen-containing gas is generated, an oxygen-active species (for example, an oxygen radical) is generated, and the molecular hydrogen of the monolayer of the layer Ly1 is formed. Substituted by oxygen, as shown in part (c) of Fig. 7, the layer Ly2 which is a tantalum oxide film is formed as a monolayer.

後續製程S41h係對處理容器12內之空間進行沖洗。具體而言，製程S41g中所供給之第2氣體受到排氣。製程S41h中，做為沖洗氣體也可將氮氣體等惰性氣體供給於處理容器12。亦即，製程S41h之沖洗可為使得惰性氣體流經處理容器12內之氣體沖洗、或是基於抽真空之沖洗。 Subsequent process S41h flushes the space within the processing vessel 12. Specifically, the second gas supplied in the process S41g is exhausted. In the process S41h, an inert gas such as a nitrogen gas may be supplied to the processing container 12 as a flushing gas. That is, the flushing of the process S41h may be such that the inert gas flows through the gas in the processing vessel 12 or is flushed based on vacuum.

以上所說明之序列SQ1中，在製程S41f進行沖洗，於後續製程S41g中，構成層Ly1之分子氫被氧所取代。從而，和ALD法同樣地，藉由1次之序列SQ1之實行，可使得矽氧化膜之層Ly2在晶圓W1之表面上不受到遮罩MK11之疏密影響而以薄薄的均一膜厚來保形地形成。 In the sequence SQ1 described above, the process S41f is performed, and in the subsequent process S41g, the molecular hydrogen constituting the layer Ly1 is replaced by oxygen. Therefore, in the same manner as the ALD method, by the execution of the sequence SQ1 once, the layer Ly2 of the tantalum oxide film can be prevented from being affected by the denseness of the mask MK11 on the surface of the wafer W1 with a thin uniform film thickness. To form conformal formation.

於序列SQ1之後之後續製程S41i，判定是否結束序列SQ1之實行。具體而言，製程S41i中，判定序列SQ1之實行次數是否達既定次數。序列SQ1之實行次數之決定係決定在晶圓W1上所形成之保護膜SX1之膜厚。亦即，以利用1次的序列SQ1之實行所形成之矽氧化膜之膜厚與序列SQ1之實行次數的乘積來實質決定最終於晶圓W1上所形成之保護膜SX1之膜厚。從而，因應於晶圓W1上所形成之保護膜SX1所希望之厚度來設定序列SQ1之實行次數。 Following the sequence S41i subsequent to the sequence SQ1, it is determined whether or not the execution of the sequence SQ1 is ended. Specifically, in the process S41i, it is determined whether or not the number of executions of the sequence SQ1 has reached a predetermined number of times. The determination of the number of executions of the sequence SQ1 determines the film thickness of the protective film SX1 formed on the wafer W1. That is, the film thickness of the protective film SX1 finally formed on the wafer W1 is substantially determined by the product of the film thickness of the tantalum oxide film formed by the execution of the sequence SQ1 once and the number of times of the sequence SQ1. Therefore, the number of executions of the sequence SQ1 is set in accordance with the desired thickness of the protective film SX1 formed on the wafer W1.

當判定製程S41i中序列SQ1之實行次數未達既定次數之情況(製程S41i：NO)，再次反覆序列SQ1之實行。另一方面，當判定製程S41i中序列SQ1之實行次數達到既定次數之情況(製程S41i：YES)，乃結束序列SQ1之實行。藉此，如圖5(d)部所示般，於晶圓W1之表面上形成屬於矽氧化膜之保護膜SX1。亦即，藉由使得序列SQ1反覆既定次數，則具有既定膜厚之保護膜SX1可不受到遮罩MK11之疏密影響而以均一膜厚在晶圓W1之表面來保形地形成。 When it is determined that the number of executions of the sequence SQ1 in the process S41i has not reached the predetermined number of times (process S41i: NO), the execution of the sequence SQ1 is repeated again. On the other hand, when it is determined that the number of executions of the sequence SQ1 in the process S41i reaches a predetermined number of times (process S41i: YES), the execution of the sequence SQ1 is ended. Thereby, as shown in part (d) of FIG. 5, a protective film SX1 belonging to the tantalum oxide film is formed on the surface of the wafer W1. That is, by repeating the sequence SQ1 by a predetermined number of times, the protective film SX1 having a predetermined film thickness can be conformally formed on the surface of the wafer W1 with a uniform film thickness without being affected by the density of the mask MK11.

此處，序列SQ1中電漿之生成時機顯示於圖8。圖8中顯示序列SQ1至少反覆3次之模樣。圖8所示「ON」表示生成有電漿之狀態，圖8所示「OFF」表示未生成電漿之狀態。如圖8所示般，序列SQ1中，在製程S41e並未生成電漿，僅在製程S41g生成電漿。 Here, the timing of plasma generation in the sequence SQ1 is shown in FIG. The sequence SQ1 is shown in Fig. 8 at least three times. "ON" shown in Fig. 8 indicates that plasma is generated, and "OFF" shown in Fig. 8 indicates that plasma is not generated. As shown in Fig. 8, in the sequence SQ1, no plasma is generated in the process S41e, and only plasma is generated in the process S41g.

保護膜SX1如圖5(d)部所示般，包含區域R11、區域R21以及區域R31。區域R31為在遮罩MK11之側面上以及遮罩ALM1之側面上沿著該側面而延伸之區域。區域R31從有機膜OL1之表面延伸至區域R11之下側。區域R11延伸於遮罩MK11之上面之上以及區域R31上。區域R21於鄰接區域R31之間且於有機膜OL1之表面上延伸。如上述般，序列SQ1由於和ALD法同樣地形成保護膜SX1，故不受遮罩MK11之疏密的影響，區域R11、區域R21以及區域R31之個別膜厚會相互成為大致相等之膜厚。 The protective film SX1 includes a region R11, a region R21, and a region R31 as shown in part (d) of Fig. 5 . The region R31 is a region extending along the side surface of the mask MK11 and the side surface of the mask ALM1. The region R31 extends from the surface of the organic film OL1 to the lower side of the region R11. The region R11 extends over the upper surface of the mask MK11 and on the region R31. The region R21 extends between the adjacent regions R31 and on the surface of the organic film OL1. As described above, since the sequence SQ1 forms the protective film SX1 in the same manner as the ALD method, the film thickness of the region R11, the region R21, and the region R31 is substantially equal to each other without being affected by the density of the mask MK11.

此處，針對序列SQ1之實行時之處理容器12內的保護膜之形成態樣來說明。於晶圓W1之表面形成保護膜SX1之同時，藉由反覆實行序列SQ1，則圖3之狀態A3所示保護膜SXa2會形成於處理空間Sp等所具保護膜SXa1之表面。從而，保護膜SX1之厚度(LC2b)會成為和保護膜SXa2之厚度(LC2a)大致相同。亦即，圖4所示製程S4中藉由反覆序列SQ1，則具有和保護膜SX1之厚度為同樣厚度之保護膜SXa2會以均一膜厚在保護膜SXa1之表面來保形地形成。 Here, the formation of the protective film in the processing container 12 at the time of execution of the sequence SQ1 will be described. When the protective film SX1 is formed on the surface of the wafer W1, and the sequence SQ1 is repeatedly performed, the protective film SXa2 shown in the state A3 of FIG. 3 is formed on the surface of the protective film SXa1 such as the processing space Sp. Therefore, the thickness (LC2b) of the protective film SX1 is substantially the same as the thickness (LC2a) of the protective film SXa2. That is, in the process S4 shown in FIG. 4, by the reverse sequence SQ1, the protective film SXa2 having the same thickness as the thickness of the protective film SX1 is formed conformally on the surface of the protective film SXa1 with a uniform film thickness.

此外，圖3之狀態A2以及狀態A3所示保護膜SXa1也藉由和序列SQ1為同樣的序列在製程S2中來形成。從而，於製程S2中藉由使得該序列反覆既定次數，可對於在處理空間Sp等所露出之電漿處理裝置10之全部構成零件之表面，使得具有既定膜厚(LC1)之保護膜SXa1在處理空間Sp等中以均一膜厚來保形地形成。 Further, the protective film SXa1 shown in the state A2 and the state A3 of FIG. 3 is also formed in the process S2 by the same sequence as the sequence SQ1. Therefore, in the process S2, by repeating the sequence a predetermined number of times, the protective film SXa1 having a predetermined film thickness (LC1) can be made on the surface of all the constituent parts of the plasma processing apparatus 10 exposed in the processing space Sp or the like. The processing space Sp or the like is formed in a conformal shape with a uniform film thickness.

回到圖4來說明。接續於製程S41i之後續製程S41j中，係以去除區域R11以及區域R21的方式來蝕刻(回蝕)保護膜SX1。為了去除區域R11以及區域R21，必須採異向性蝕刻條件。因此，製程S41j中，從氣體源群40之複數氣體源當中所選擇之氣體源來將含氟碳氣體之處理氣體供給於處理容器12內。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50動作，將處理容器12內之空間壓力設定為既 定壓力。藉此，生成氟碳氣體之電漿。所生成之電漿中的含氟活性種會因著高頻偏壓電力所致鉛直方向之拉引而將區域R11以及區域R21加以優先蝕刻。其結果，如圖6(a)部所示般，區域R11以及區域R21被選擇性去除，藉由殘存之區域R31來形成遮罩MS1。遮罩MS1、保護膜PF1以及遮罩ALM1係構成有機膜OL1之表面上的遮罩MK21。 Return to Figure 4 to illustrate. In the subsequent process S41j following the process S41i, the protective film SX1 is etched (etched back) by removing the region R11 and the region R21. In order to remove the region R11 and the region R21, an anisotropic etching condition must be employed. Therefore, in the process S41j, the processing gas of the fluorine-containing carbon gas is supplied into the processing container 12 from the gas source selected from the plurality of gas sources of the gas source group 40. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. By operating the exhaust device 50, the space pressure in the processing container 12 is set to Constant pressure. Thereby, a plasma of a fluorocarbon gas is generated. The fluorine-containing active species in the generated plasma preferentially etches the region R11 and the region R21 by pulling in the vertical direction due to the high-frequency bias power. As a result, as shown in part (a) of Fig. 6, the region R11 and the region R21 are selectively removed, and the mask MS1 is formed by the remaining region R31. The mask MS1, the protective film PF1, and the mask ALM1 constitute a mask MK21 on the surface of the organic film OL1.

後續製程S41k係蝕刻有機膜OL1。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源將含氮氣體與氫氣體之處理氣體供給於處理容器12內。此外，從第1高頻電源62來供給高頻電力。從第2高頻電源64來供給高頻偏壓電力。藉由使得排氣裝置50動作，將處理容器12內之空間壓力設定為既定壓力。藉此，生成含氮氣體與氫氣體之處理氣體之電漿。所生成之電漿中的氫活性種亦即氫自由基係將有機膜OL1之全區域當中從遮罩MK21所露出之區域加以蝕刻。藉此，如圖6(b)部所示般，從有機膜OL1形成遮罩OLM1。此外，做為蝕刻有機膜OL1之氣體也可使用含氧之處理氣體。此外，遮罩OLM1所提供之開口寬度係和遮罩MK21所提供之開口寬度成為大致相同。 The subsequent process S41k etches the organic film OL1. Specifically, a gas source selected from a plurality of gas sources of the gas source group 40 supplies a processing gas containing a nitrogen gas and a hydrogen gas into the processing container 12. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by operating the exhaust device 50. Thereby, a plasma of a processing gas containing a nitrogen gas and a hydrogen gas is generated. The hydrogen active species in the generated plasma, that is, the hydrogen radicals, etch the region exposed from the mask MK21 in the entire region of the organic film OL1. Thereby, as shown in part (b) of FIG. 6, the mask OLM1 is formed from the organic film OL1. Further, as the gas for etching the organic film OL1, an oxygen-containing processing gas can also be used. Further, the width of the opening provided by the mask OLM1 is substantially the same as the width of the opening provided by the mask MK21.

後續製程S41m中係蝕刻被蝕刻層EL1。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將處理氣體供給於處理容器12內。處理氣體可因應於構成被蝕刻層EL1之材料來適宜選擇。例如，當被蝕刻層EL1由氧化矽所構成之情況，處理氣體可含氟碳氣體。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。使得排氣裝置50產生動作來將處理容器12內之空間壓力設定為既定壓力。藉此生成電漿。所生成之電漿中的活性種係將被蝕刻層EL1之全區域當中從遮罩OLM1露出的區域加以蝕刻。藉此，如圖6(c)部所示般，遮罩OLM1之圖案被轉印至被蝕刻層EL1。 The etched layer EL1 is etched in the subsequent process S41m. Specifically, the processing gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. The processing gas can be appropriately selected in accordance with the material constituting the layer to be etched EL1. For example, when the etched layer EL1 is composed of yttrium oxide, the process gas may be a fluorocarbon gas. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The exhaust device 50 is caused to operate to set the space pressure in the processing container 12 to a predetermined pressure. Thereby generating a plasma. The active species in the generated plasma is etched by the region exposed from the mask OLM1 in the entire region of the etched layer EL1. Thereby, as shown in part (c) of FIG. 6, the pattern of the mask OLM1 is transferred to the layer to be etched EL1.

此處，針對在處理容器12內所形成之保護膜SXa的厚度來說明。直到蝕刻有機膜OL1之製程S41k前之於處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)係較在蝕刻有機膜OL1之製程S41k之結束為止之保護膜SXa當中被蝕刻去除之膜的厚度(LE)來得厚，滿足LE<(LC1+LC2a)之關係。此外，直到蝕刻有機膜OL1之製程S41k之前，在處理容器12內所形成之 保護膜SXa之膜的厚度(LC1+LC2a)係較被蝕刻層EL1之膜的厚度(LD)來得薄，滿足(LC1+LC2a)<LD之關係。此外，保護膜SXa之膜的厚度(LC1+LC2a)可同時滿足上述大小關係。亦即，可滿足LE<(LC1+LC2a)<LD之關係。此外，尤其是(LC1+LC2a)<LD之情況，由於在製程S41m之結束前，處理容器12內之保護膜SXa被全部去除，故無需製程S6之處理。 Here, the thickness of the protective film SXa formed in the processing container 12 is demonstrated. The thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 before the process S41k for etching the organic film OL1 is etched out of the protective film SXa at the end of the process S41k of etching the organic film OL1. The thickness (LE) of the removed film is made thicker to satisfy the relationship of LE<(LC1+LC2a). Further, it is formed in the processing container 12 until the process S41k of etching the organic film OL1 is performed. The thickness (LC1+LC2a) of the film of the protective film SXa is thinner than the thickness (LD) of the film of the etching layer EL1, and satisfies the relationship of (LC1+LC2a)<LD. Further, the thickness (LC1+LC2a) of the film of the protective film SXa can satisfy the above-described size relationship. That is, the relationship of LE<(LC1+LC2a)<LD can be satisfied. Further, in particular, in the case of (LC1+LC2a)<LD, since the protective film SXa in the processing container 12 is completely removed before the end of the process S41m, the process of the process S6 is not required.

藉由以上說明之圖4所示製程S4之實行，可發揮下述之效果。製程S41e中，不進行電漿之生成而將含胺基矽烷系氣體之第1氣體G1供給於處理容器12內，再者於此之後，於製程S41g中，生成含有氧氣體之第2氣體的電漿P1來形成薄膜之矽氧化膜的保護膜SX1。從而，藉由圖4所示製程S4中所實行之製程41e~製程S41h(序列SQ1)使得保護膜SX1於晶圓W1之表面來均一且保形地形成。然後，直到圖4所示製程S4中所實行之形成製程(從製程41d之後到製程S41i(YES)為止之製程)中，由於反覆實行序列SQ1，而可高精度地控制於晶圓W1之表面所形成之保護膜SX1之厚度。從而，藉由以包含複數次序列SQ1之形成製程所形成之保護膜SX1，可高精度降低晶圓W1表面之圖案的最小線寬，使得伴隨高積體化之微細化成為可能。 The effect described below can be exerted by the execution of the process S4 shown in Fig. 4 described above. In the process S41e, the first gas G1 containing the amine-based decane-based gas is supplied to the processing container 12 without generating plasma, and thereafter, the second gas containing the oxygen gas is generated in the process S41g. The plasma P1 forms a protective film SX1 of a tantalum oxide film of a film. Therefore, the protective film SX1 is uniformly and conformally formed on the surface of the wafer W1 by the process 41e to the process S41h (sequence SQ1) performed in the process S4 shown in FIG. Then, up to the formation process (from the process after the process 41d to the process S41i (YES)) in the process S4 shown in FIG. 4, since the sequence SQ1 is repeatedly executed, the surface of the wafer W1 can be controlled with high precision. The thickness of the formed protective film SX1. Therefore, by the protective film SX1 formed by the formation process including the plurality of sequence SQ1, the minimum line width of the pattern on the surface of the wafer W1 can be reduced with high precision, and the miniaturization with high integration can be made possible.

此外，藉由圖4所示製程S4中所實行之形成製程(從製程41d後至製程S41i(YES)為止的製程)，於晶圓W1之表面形成矽氧化膜之保護膜SX1，再者，對於處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面也以和保護膜SX1為同樣的厚度來形成矽氧化膜做為保護膜(保護膜SXa2)。從而，由於可藉由在處理容器12之內側表面以及連接於處理容器12之各種配管的內側表面所形成之保護膜SXa2，而充分抑制從此等各表面所致粒子之產生與該各表面狀態之變化，使得安定最小線寬之再現等成為可能。 Further, a protective film SX1 of a tantalum oxide film is formed on the surface of the wafer W1 by a forming process (process from the process 41d to the process S41i (YES)) performed in the process S4 shown in FIG. The inner surface of the processing container 12 and the inner surface of each of the pipes connected to the processing container 12 are also formed to have a tantalum oxide film as a protective film (protective film SXa2) with the same thickness as the protective film SX1. Therefore, since the protective film SXa2 formed on the inner side surface of the processing container 12 and the inner side surface of the various pipes connected to the processing container 12 can sufficiently suppress the generation of particles and the surface states from the respective surfaces. The change makes it possible to reproduce the minimum line width of stability.

此外，和圖4所示製程S4所實行之形成製程(從製程41d之後至製程S41i(YES)為止之製程)為獨立地，於圖4所示製程S4之前所實行之準備製程之製程S2中也實行形成製程(從製程41d後至製程S41i(YES)為止之製程)。從而，由於可使得和圖4所示製程S4中藉由蝕刻所去除之矽氧化膜之厚度對應之所希望之厚度的矽氧化膜在處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面以保護膜的形式來形成，故可不受到圖4所示製程 S4中所進行之蝕刻程度的影響，來充分抑制從此等各表面所致粒子之產生與該各表面之狀態變化。 Further, the forming process (the process from the process 41d to the process S41i (YES)) performed by the process S4 shown in FIG. 4 is independently, in the process S2 of the preparatory process which is performed before the process S4 shown in FIG. The process of forming the process (from the process of the process 41d to the process of the process S41i (YES)) is also carried out. Therefore, the inner surface of the processing container 12 and the various pipes connected to the processing container 12 can be made to have a desired thickness of the tantalum oxide film corresponding to the thickness of the tantalum oxide film removed by etching in the process S4 shown in FIG. The inner side surface is formed in the form of a protective film, so it may not be subjected to the process shown in FIG. The influence of the degree of etching performed in S4 sufficiently suppresses the generation of particles and the state changes of the respective surfaces from the respective surfaces.

此外，由於可使用含單胺基矽烷(H3-Si-R(R為胺基))之第1氣體G1來進行形成處理(從製程41d之後到製程S41i(YES)為止之製程)，故和ALD法之情況同樣，可使得保護膜SX1、保護膜SXa相對於表面形狀以均一厚度來高精度地保形地形成。 Further, since the first gas G1 containing monoamine-based decane (H 3 -Si-R (R is an amine group)) can be used for the formation treatment (from the process after the process 41d to the process of the process S41i (YES)), As in the case of the ALD method, the protective film SX1 and the protective film SXa can be formed in a conformal shape with high uniformity with respect to the surface shape with high precision.

此外，當使用單胺基矽烷之情況，由於可將晶圓W1之溫度設定在攝氏0度以上且為遮罩MK11所含材料之玻璃轉化溫度以下之相對低溫下來對晶圓W1實行處理，故無需加熱晶圓W1之處理。 In addition, when monoamine-based decane is used, since the temperature of the wafer W1 can be set to be above 0 degrees Celsius and the wafer W1 is processed at a relatively low temperature below the glass transition temperature of the material contained in the mask MK11, There is no need to heat the wafer W1.

此外，於圖4所示製程S4之後，即便於處理容器12內以及連接於處理容器12之各種配管內殘存矽氧化膜之情況，可藉由實行製程S6而從處理容器12內以及連接於處理容器12之各種配管內來確實去除矽氧化膜。 Further, after the process S4 shown in FIG. 4, even if the tantalum oxide film remains in the processing container 12 and in the various pipes connected to the processing container 12, it can be processed from the processing container 12 and connected to the process by executing the process S6. The various oxide tubes of the container 12 are surely removed from the tantalum oxide film.

此外，直到蝕刻有機膜OL1之製程S41k之前，於處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)係較蝕刻有機膜OL1之製程S41k之結束為止之保護膜SXa當中被蝕刻去除之膜的厚度(LE)來得厚。如此般，由於即使在製程S41k所做有機膜OL1之蝕刻結束後，於處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面會成為殘留矽氧化膜，而可避免出現以下之事態、亦即避免蝕刻中矽氧化膜被去除造成此等各表面露出，該各表面之狀態發生變化而從該各表面產生粒子等之事態。此外，由於在基於製程S41k之有機膜OL1之蝕刻實行前係進行形成保護膜SX1之形成製程(從製程41d後至製程S41i(YES)之製程)，而可避免有機膜OL1之蝕刻所生活性種(例如氫自由基)和處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面起反應，從而可充分抑制從此等各表面產生粒子以及該各表面狀態之變化。 Further, before the process S41k of etching the organic film OL1, the thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 is higher than that of the protective film SXa until the end of the process S41k of the etching organic film OL1. The thickness (LE) of the film removed by etching is made thick. In this manner, even after the etching of the organic film OL1 by the process S41k is completed, the inner surface of the processing container 12 and the inner surface of the various tubes connected to the processing container 12 become residual oxide films, thereby avoiding the following In the event, that is, the etching of the tantalum oxide film is prevented, and the surfaces are exposed, and the state of each surface changes, and particles or the like are generated from the respective surfaces. In addition, since the formation process of the protective film SX1 is performed before the etching of the organic film OL1 based on the process S41k is performed (from the process of the process 41d to the process of the process S41i (YES)), the etching life of the organic film OL1 can be avoided. The species (for example, hydrogen radicals) reacts with the inner surface of the processing container 12 and the inner surfaces of the various tubes connected to the processing container 12, so that generation of particles from the respective surfaces and changes in the state of the respective surfaces can be sufficiently suppressed.

此外，直到蝕刻有機膜OL1之製程S41k之前，於處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)係較被蝕刻層EL1之膜的厚度(LD)來得薄。如此般，藉由在處理容器12內以及連接於處理容器12之各種配管內所形成之保護膜SXa之厚度較被蝕刻層EL1之膜的厚度來得薄，處理容器12內以及連接於處理容器12之各種配管內的保護膜SXa利用被蝕刻層EL1之蝕 刻而被去除，故於製程S4之後所進行之處理容器12內以及連接於處理容器12之各種配管內的潔淨時，毋須將處理容器12內以及連接於處理容器12之各種配管內的矽氧化膜加以去除之處理(製程S6)。 Further, the thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 is thinner than the thickness (LD) of the film of the layer to be etched EL1 until the process S41k for etching the organic film OL1. In this manner, the thickness of the protective film SXa formed in the processing container 12 and the various pipes connected to the processing container 12 is thinner than the thickness of the film of the etched layer EL1, and the inside of the processing container 12 and the processing container 12 are connected. The protective film SXa in the various pipes utilizes the etched layer EL1 Since it is removed in order to clean the inside of the processing container 12 and the various pipes connected to the processing container 12 after the process S4, it is not necessary to oxidize the inside of the processing container 12 and the various pipes connected to the processing container 12. The film is removed (process S6).

其次，參見圖9來詳細說明圖1之製程S4之處理內容的其他實施形態。於以下之說明中係參見圖10、圖11以及圖12。圖11以及圖12係顯示圖9所示各製程之實施後之被處理體狀態之截面圖。 Next, another embodiment of the processing contents of the process S4 of Fig. 1 will be described in detail with reference to Fig. 9 . See Figures 10, 11 and 12 for the following description. 11 and 12 are cross-sectional views showing the state of the object to be processed after the execution of each process shown in Fig. 9.

圖9所示製程S4，首先，於製程S42a中，準備圖10(a)部所示晶圓W2做為圖2所示晶圓W。製程S42a中所準備之晶圓W2如圖10(a)部所示般具有基板SB2、被蝕刻層EL2、有機膜OL2、抗反射膜AL2以及遮罩MK12(第1遮罩)。被蝕刻層EL2係設於基板SB2上。被蝕刻層EL2係由相對於有機膜OL2受到選擇性蝕刻之材料所構成之層。被蝕刻層EL2例如可由氧化矽(SiO2)所構成。此外，被蝕刻層EL2可由多晶矽等其他材料所構成。有機膜OL2係設於被蝕刻層EL2。有機膜OL2為含碳之層，例如為SOH(旋塗硬遮罩)層。抗反射膜AL2為含矽抗反射膜，設於有機膜OL2上。 In the process S4 shown in FIG. 9, first, in the process S42a, the wafer W2 shown in FIG. 10(a) is prepared as the wafer W shown in FIG. As shown in FIG. 10(a), the wafer W2 prepared in the process S42a has a substrate SB2, an etched layer EL2, an organic film OL2, an anti-reflection film AL2, and a mask MK12 (first mask). The layer to be etched EL2 is provided on the substrate SB2. The layer to be etched EL2 is a layer composed of a material selectively etched with respect to the organic film OL2. The layer to be etched EL2 can be composed, for example, of yttrium oxide (SiO2). Further, the layer to be etched EL2 may be composed of other materials such as polysilicon. The organic film OL2 is provided on the layer to be etched EL2. The organic film OL2 is a carbon-containing layer, for example, an SOH (spin-coated hard mask) layer. The anti-reflection film AL2 is a ruthenium-containing antireflection film and is provided on the organic film OL2.

遮罩MK12係設於抗反射膜AL2上。遮罩MK12為由阻劑材料所構成之阻劑遮罩，係藉由光微影技術使得阻劑層經圖案化所製作。遮罩MK12係部分覆蓋著抗反射膜AL2。遮罩MK12區劃有使得抗反射膜AL2部分性露出之開口。遮罩MK12之圖案為例如線-空間圖案。此外，遮罩MK12可具有提供俯視上圓形開口的圖案。或是，遮罩MK12可具有提供俯視上橢圓形狀開口的圖案。 The mask MK12 is provided on the anti-reflection film AL2. The mask MK12 is a resist mask composed of a resist material, which is formed by patterning a resist layer by photolithography. The mask MK12 is partially covered with an anti-reflection film AL2. The mask MK12 is partitioned with an opening that partially exposes the anti-reflection film AL2. The pattern of the mask MK12 is, for example, a line-space pattern. Further, the mask MK12 may have a pattern that provides a circular opening in a plan view. Alternatively, the mask MK12 may have a pattern that provides an elliptical shaped opening in plan view.

製程S42a中，準備圖10(a)部所示晶圓W2，晶圓W2被收容於電漿處理裝置10之處理容器12內，載置於載置台PD上。 In the process S42a, the wafer W2 shown in FIG. 10(a) is prepared, and the wafer W2 is housed in the processing container 12 of the plasma processing apparatus 10, and placed on the mounting table PD.

接續於製程S42a來實行製程S42b。由於製程S42b之處理內容和製程S41b之處理內容同樣，是以藉由製程S42b之處理讓遮罩MK12獲得改質，再者，氧化矽沉積於晶圓W2上，此氧化矽之保護膜會覆蓋保護遮罩MK12。 Process S42b is carried out in connection with process S42a. Since the processing content of the process S42b is the same as that of the process S41b, the mask MK12 is modified by the process of the process S42b, and further, the yttrium oxide is deposited on the wafer W2, and the protective film of the yttrium oxide is covered. Protect the mask MK12.

接續於製程S42b來實行序列SQ2以及製程S42g。製程S42g係接續於序列SQ2來實行。序列SQ2包含製程S42c(第1製程)、製程S42d(第2製程)、製程S42e(第3製程)、以及製程S42f(第4製程)。製程S42c、製程S42d、製程S42e以及製程S42f分別和圖4所示序列SQ1之製程S41e、製程S41f、製程S41g以 及製程S41h為同樣的處理。亦即，序列SQ2係和圖4所示序列SQ1為同樣的處理。製程S42g和圖4所示製程S41i為同樣的處理。從而，當判定於製程S42g中之序列SQ2之實行次數達到既定次數之情況(製程S42g：YES)乃結束序列SQ2之實行，如圖10(b)部所示般，於晶圓W2之表面上形成屬於矽氧化膜之保護膜SX2。亦即，序列SQ2反覆既定次數，藉此，具有既定膜厚之保護膜SX2會不受到遮罩MK12之疏密的影響而以均一膜厚來保形地形成於晶圓W2之表面。 The sequence SQ2 and the process S42g are carried out in the process S42b. The process S42g is carried out in the sequence SQ2. The sequence SQ2 includes a process S42c (first process), a process S42d (second process), a process S42e (third process), and a process S42f (fourth process). The process S42c, the process S42d, the process S42e, and the process S42f are respectively performed with the process S41e, the process S41f, and the process S41g of the sequence SQ1 shown in FIG. And the process S41h is the same process. That is, the sequence SQ2 is the same as the sequence SQ1 shown in FIG. The process S42g and the process S41i shown in FIG. 4 are the same process. Therefore, when it is determined that the number of executions of the sequence SQ2 in the process S42g reaches a predetermined number of times (process S42g: YES), the execution of the sequence SQ2 is completed, as shown in part (b) of FIG. 10, on the surface of the wafer W2. A protective film SX2 belonging to the tantalum oxide film is formed. That is, the sequence SQ2 is repeated a predetermined number of times, whereby the protective film SX2 having a predetermined film thickness is conformally formed on the surface of the wafer W2 with a uniform film thickness without being affected by the density of the mask MK12.

保護膜SX2如圖10(b)部所示般包含區域R12、區域R22以及區域R32。區域R32係於遮罩MK12之側面上沿著該側面所延伸之區域。區域R32係從抗反射膜AL2之表面延伸至區域R12之下側。區域R12係延伸於遮罩MK12之上面之上以及區域R32上。區域R22係延伸於鄰接區域R32之間且延伸於抗反射膜AL2之表面上。如上述般，由於序列SQ2和ALD法同樣地形成保護膜SX2，故不受到遮罩MK12之疏密影響，區域R12、區域R22以及區域R32之個別膜厚成為相互大致相等之膜厚。 The protective film SX2 includes a region R12, a region R22, and a region R32 as shown in part (b) of Fig. 10 . The region R32 is on the side of the mask MK12 along the area where the side extends. The region R32 extends from the surface of the anti-reflection film AL2 to the lower side of the region R12. The region R12 extends over the top of the mask MK12 and over the region R32. The region R22 extends between the adjacent regions R32 and extends over the surface of the anti-reflection film AL2. As described above, since the protective film SX2 is formed in the same manner as the sequence SQ2 and the ALD method, the film thickness of the region R12, the region R22, and the region R32 is substantially equal to each other without being affected by the density of the mask MK12.

於晶圓W2之表面形成保護膜SX2之同時來反覆實行序列SQ2，藉此，圖3之狀態A3所示保護膜SXa2會形成於位於處理空間Sp等之保護膜SXa1之表面處。從而，保護膜SX2之厚度(LC2b)會成為和保護膜SXa2之厚度(LC2a)大致相同。亦即，藉由於圖9所示製程S4中反覆進行序列SQ2，具有和保護膜SX2之厚度為同樣膜厚之保護膜SXa2會以均一的膜厚來保形地形成於處理空間Sp內之保護膜SXa1之表面。於製程S42c以及製程S42e中，晶圓W2之溫度為攝氏0度以上且為遮罩MK12所含材料之玻璃轉化溫度以下(例如攝氏200度以下)之程度。 When the protective film SX2 is formed on the surface of the wafer W2 and the sequence SQ2 is repeatedly performed, the protective film SXa2 shown in the state A3 of FIG. 3 is formed on the surface of the protective film SXa1 located in the processing space Sp or the like. Therefore, the thickness (LC2b) of the protective film SX2 is substantially the same as the thickness (LC2a) of the protective film SXa2. That is, by repeating the sequence SQ2 in the process S4 shown in FIG. 9, the protective film SXa2 having the same film thickness as the thickness of the protective film SX2 is conformally formed in the processing space Sp with a uniform film thickness. The surface of the membrane SXa1. In the process S42c and the process S42e, the temperature of the wafer W2 is 0 degrees Celsius or more and is equal to or less than the glass transition temperature of the material of the mask MK12 (for example, 200 degrees Celsius or less).

此外，圖3之狀態A2以及狀態A3所示保護膜SXa1也藉由和序列SQ2為同樣的序列而於製程S2中形成。從而，製程S2中該序列以既定次數反覆，對於在處理空間Sp等所露出之電漿處理裝置10之全部構成零件之表面使得具有既定膜厚(LC1)之護膜SXa1在處理空間Sp等以均一膜厚來保形地形成。 Further, the protective film SXa1 shown in the state A2 and the state A3 of FIG. 3 is also formed in the process S2 by the same sequence as the sequence SQ2. Therefore, in the process S2, the sequence is repeated a predetermined number of times, and the film SXa1 having a predetermined film thickness (LC1) is treated in the processing space Sp or the like for the surface of all the components of the plasma processing apparatus 10 exposed in the processing space Sp or the like. Uniform film thickness is formed conformally.

回到圖9來說明。接續於製程S42g之後續製程S42h係以去除區域R12以及區域R22的方式來蝕刻(回蝕)保護膜SX2。為了去除區域R12以及區域R22，必須採異向性蝕刻條件。因此，製程S42h中，從氣體源群40之複數氣體源 當中所選擇之氣體源來將含氟碳氣體之處理氣體供給於處理容器12內。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。使得排氣裝置50產生動作以將處理容器12內之空間壓力設定為既定壓力。藉此，生成氟碳氣體之電漿。所生成之電漿中含氟活性種係藉由高頻偏壓電力所致朝鉛直方向之拉引來優先性蝕刻區域R12以及區域R22。其結果，如圖11(a)部所示般，選擇性去除區域R12以及區域R22，藉由殘存之區域R32來形成遮罩MK22(第2遮罩)。 Returning to Fig. 9, it will be explained. The subsequent process S42h following the process S42g etches (etches back) the protective film SX2 in such a manner as to remove the region R12 and the region R22. In order to remove the region R12 and the region R22, an anisotropic etching condition must be employed. Therefore, in process S42h, a plurality of gas sources from the gas source group 40 The gas source selected is used to supply the processing gas of the fluorine-containing carbon gas into the processing vessel 12. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The exhaust device 50 is caused to operate to set the space pressure within the processing vessel 12 to a predetermined pressure. Thereby, a plasma of a fluorocarbon gas is generated. The fluorine-containing active species in the generated plasma are preferentially etched into the region R12 and the region R22 by drawing in the vertical direction by the high-frequency bias power. As a result, as shown in FIG. 11(a), the region R12 and the region R22 are selectively removed, and the mask MK22 (second mask) is formed by the remaining region R32.

後續製程S42i中係去除遮罩MK12。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將含氧氣體之處理氣體供給於處理容器12內。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50產生動作，將處理容器12內之空間壓力設定為既定壓力。藉此，生成含氧氣體之處理氣體的電漿。所生成之電漿中之氧活性種如圖11(b)部所示般來蝕刻遮罩MK12。藉此去除遮罩MK12，於抗反射膜AL2上殘留遮罩MK22。 The mask MK12 is removed in the subsequent process S42i. Specifically, the processing gas of the oxygen-containing gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by causing the exhaust device 50 to operate. Thereby, a plasma of a processing gas containing an oxygen gas is generated. The oxygen active species in the generated plasma etch the mask MK12 as shown in part (b) of Fig. 11 . Thereby, the mask MK12 is removed, and the mask MK22 remains on the anti-reflection film AL2.

後續製程S42j中係蝕刻抗反射膜AL2。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源將含氟碳氣體之處理氣體供給於處理容器12內。然後，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50產生動作來將處理容器12內之空間壓力設定為既定壓力。藉此，生成氟碳氣體電漿。所生成之電漿中之含氟活性種如圖12(a)部所示般將抗反射膜AL2之全區域當中從遮罩MK22露出之區域加以蝕刻。 The anti-reflection film AL2 is etched in the subsequent process S42j. Specifically, a gas source selected from a plurality of gas sources of the gas source group 40 supplies a processing gas of a fluorine-containing carbon gas into the processing container 12. Then, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by causing the exhaust device 50 to operate. Thereby, a fluorocarbon gas plasma is generated. The fluorine-containing active species in the generated plasma are etched from the region exposed from the mask MK22 in the entire region of the anti-reflection film AL2 as shown in part (a) of Fig. 12 .

後續製程S42k係蝕刻有機膜OL2。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將含氮氣體與氫氣體之處理氣體供給於處理容器12內。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50產生動作來將處理容器12內之空間壓力設定為既定壓力。藉此，生成含氮氣體與氫氣體之處理氣體的電漿。所生成之電漿中之氫活性種亦即氫自由基係將有機膜OL2之全區域當中從遮罩MK22露出之區域加以蝕刻。藉此，如圖12(b)部所示般，從有機膜OL2形成遮罩MK32(第3遮罩)。此外，在蝕刻有機膜OL2之氣體方面也可使用含氧之 處理氣體。 The subsequent process S42k etches the organic film OL2. Specifically, a processing gas containing a nitrogen gas and a hydrogen gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by causing the exhaust device 50 to operate. Thereby, a plasma of a processing gas containing a nitrogen gas and a hydrogen gas is generated. The hydrogen active species in the generated plasma, that is, the hydrogen radicals, etch the region exposed from the mask MK22 in the entire region of the organic film OL2. Thereby, as shown in part (b) of FIG. 12, a mask MK32 (third mask) is formed from the organic film OL2. In addition, oxygen can also be used in etching the gas of the organic film OL2. Process the gas.

後續製程S42m中係將被蝕刻層EL2加以蝕刻。具體而言，從氣體源群40之複數氣體源當中所選擇之氣體源來將處理氣體供給於處理容器12內。處理氣體可因應於構成被蝕刻層EL2之材料來適宜選擇。例如，當被蝕刻層EL2係由氧化矽所構成之情況，處理氣體可含氟碳氣體。此外，從第1高頻電源62供給高頻電力。從第2高頻電源64供給高頻偏壓電力。藉由使得排氣裝置50產生動作來將處理容器12內之空間壓力設定為既定壓力。藉此生成電漿。所生成之電漿中之活性種係將被蝕刻層EL2之全區域當中從遮罩MK32露出之區域加以蝕刻。藉此，如圖12(c)部所示般，遮罩MK32之圖案轉印於被蝕刻層EL2。 The subsequent process S42m will be etched by the etch layer EL2. Specifically, the processing gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources of the gas source group 40. The processing gas can be appropriately selected in accordance with the material constituting the layer to be etched EL2. For example, when the etched layer EL2 is composed of yttrium oxide, the process gas may be a fluorocarbon gas. Further, high frequency power is supplied from the first high frequency power source 62. The high frequency bias power is supplied from the second high frequency power source 64. The space pressure in the processing container 12 is set to a predetermined pressure by causing the exhaust device 50 to operate. Thereby generating a plasma. The active species in the generated plasma are etched by the region of the entire region of the etched layer EL2 exposed from the mask MK32. Thereby, as shown in part (c) of FIG. 12, the pattern of the mask MK32 is transferred to the layer to be etched EL2.

此處，針對在處理容器12內所形成之保護膜SXa之厚度來說明。直到蝕刻有機膜OL2之製程S42k之前在處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)係較直到蝕刻有機膜OL2之製程S42k結束為止之保護膜SXa當中被蝕刻去除之膜的厚度(LE)來得厚，滿足LE<(LC1+LC2a)之關係。此外，直到蝕刻有機膜OL2之製程S42k之前在處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)係較被蝕刻層EL2之膜的厚度(LD)來得薄，滿足(LC1+LC2a)<LD之關係。此外，保護膜SXa之膜的厚度(LC1+LC2a)可同時滿足上述大小關係。亦即，可滿足LE<(LC1+LC2a)<LD之關係。此外，尤其(LC1+LC2a)<LD之情況，由於至製程S42m結束為止處理容器12內之保護膜SXa被全部去除，故無需製程S6之處理。 Here, the thickness of the protective film SXa formed in the processing container 12 is demonstrated. The thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 before the process S42k of etching the organic film OL2 is etched away from the protective film SXa until the end of the process S42k of etching the organic film OL2. The thickness (LE) of the film is made thicker to satisfy the relationship of LE<(LC1+LC2a). Further, the thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 until the process S42k of etching the organic film OL2 is thinner than the thickness (LD) of the film of the etched layer EL2, satisfies (LC1) +LC2a) <LD relationship. Further, the thickness (LC1+LC2a) of the film of the protective film SXa can satisfy the above-described size relationship. That is, the relationship of LE<(LC1+LC2a)<LD can be satisfied. Further, in particular, in the case of (LC1+LC2a)<LD, since the protective film SXa in the processing container 12 is completely removed until the end of the process S42m, the process of the process S6 is not required.

藉由以上說明之圖9所示製程S4之實行可發揮下述效果。製程S42c中，不進行電漿之生成而將含胺基矽烷系氣體之第1氣體G1供給於處理容器12內，進而此後於製程S42e中，生成含氧氣體之第2氣體的電漿P1來形成薄膜之矽氧化膜的保護膜SX2。從而，藉由圖9所示製程S4中所實行之製程42c~製程S42f(序列SQ2)，保護膜SX2於晶圓W2之表面被均一、保形地形成。然後，於圖9所示製程S4所實行之形成製程(從製程42b之後至製程S42g(YES)之製程)係反覆實行序列SQ2，故可高精度控制在晶圓W2之表面所形成之保護膜SX2之厚度。從而，藉由包括複數次序列SQ2的形成製程所形成之保護膜SX2，可高精度地降低晶圓W2之表面之圖案最小線寬，使得伴隨高積體 化之微細化成為可能。 The following effects can be exhibited by the execution of the process S4 shown in Fig. 9 described above. In the process S42c, the first gas G1 containing the amine-based decane-based gas is supplied into the processing container 12 without generating plasma, and thereafter, the plasma P1 of the second gas containing the oxygen-containing gas is generated in the process S42e. A protective film SX2 of a tantalum oxide film of a film is formed. Therefore, the protective film SX2 is uniformly and conformally formed on the surface of the wafer W2 by the process 42c to the process S42f (sequence SQ2) which are carried out in the process S4 shown in FIG. Then, the formation process (the process from the process 42b to the process S42g (YES)) executed in the process S4 shown in FIG. 9 is repeated to execute the sequence SQ2, so that the protective film formed on the surface of the wafer W2 can be controlled with high precision. The thickness of the SX2. Therefore, by the protective film SX2 formed by the formation process including the plurality of sequences SQ2, the minimum line width of the pattern of the surface of the wafer W2 can be reduced with high precision, so that the high integrated body is accompanied. The miniaturization of the process is possible.

此外，藉由圖9所示製程S4中所實行之形成製程(從製程42b之後至製程S42g(YES)為止的製程)，在晶圓W2之表面形成矽氧化膜之保護膜SX2，再者，對於處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面也以和保護膜SX2為同樣的厚度來形成矽氧化膜做為保護膜(保護膜SXa2)。從而，藉由在處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面所形成之保護膜SXa2可充分抑制此等各表面所致粒子的產生與該各表面之狀態變化，使得安定最小線寬之再現等成為可能。 Further, a protective film SX2 of a tantalum oxide film is formed on the surface of the wafer W2 by a forming process (process from the process 42b to the process S42g (YES)) which is performed in the process S4 shown in FIG. The inner surface of the processing container 12 and the inner surface of each of the pipes connected to the processing container 12 are also formed to have a tantalum oxide film as a protective film (protective film SXa2) in the same thickness as the protective film SX2. Therefore, the generation of particles caused by the respective surfaces and the state changes of the respective surfaces can be sufficiently suppressed by the protective film SXa2 formed on the inner surface of the processing container 12 and the inner surface of the various tubes connected to the processing container 12, so that It is possible to stabilize the reproduction of the minimum line width.

此外，和圖9所示製程S4中所實行之形成製程(從製程42b之後至製程S42g(YES)之製程)獨立地，於圖9所示製程S4之前所實行之準備製程之製程S2中也實行形成製程(從製程42b之後至製程S42g(YES)之製程)。從而，由於和圖9所示製程S4中藉由蝕刻所去除之矽氧化膜的厚度相對應之所希望之厚度的矽氧化膜可對於處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面以保護膜的方式形成，故不會受到圖9所示製程S4中所進行之蝕刻程度的影響，可充分抑制此等各表面所致粒子的產生與該各表面狀態之變化。 Further, the formation process (the process from the process 42b to the process S42g (YES)) performed in the process S4 shown in FIG. 9 is independently performed in the process S2 of the preparation process which is performed before the process S4 shown in FIG. The formation process is carried out (from the process of process 42b to the process of process S42g (YES)). Therefore, the tantalum oxide film having a desired thickness corresponding to the thickness of the tantalum oxide film removed by etching in the process S4 shown in FIG. 9 can be applied to the inner surface of the processing container 12 and the various pipes connected to the processing container 12. Since the inner surface is formed as a protective film, it is not affected by the degree of etching performed in the process S4 shown in Fig. 9, and the generation of particles due to the respective surfaces and the change in the state of the respective surfaces can be sufficiently suppressed.

此外，由於可使用含單胺基矽烷(H3-Si-R(R為胺基))之第1氣體G1來進行形成處理(從製程42b之後至製程S42g(YES)的製程)，故和ALD法之情況同樣地，保護膜SX2、保護膜SXa可對表面形狀以均一厚度來高精度地保形形成。 Further, since the first gas G1 containing monoamine-based decane (H 3 -Si-R (R is an amine group)) can be used for the formation treatment (from the process after the process 42b to the process of the process S42g (YES)), In the case of the ALD method, the protective film SX2 and the protective film SXa can be formed in a conformal shape with a uniform thickness with a uniform thickness.

此外，使用單胺基矽烷之情況，由於晶圓W2之溫度可設定在攝氏0度以上且為遮罩MK12所含材料之玻璃轉化溫度以下之相對低溫來實行對晶圓W2之處理，故加熱晶圓W2之處理變得不必要。 Further, in the case of using the monoamine decane, since the temperature of the wafer W2 can be set to be higher than 0 degree Celsius and the relative low temperature below the glass transition temperature of the material of the mask MK12, the processing of the wafer W2 is performed, so that the heating is performed. The processing of the wafer W2 becomes unnecessary.

此外，即便圖9所示製程S4之後在處理容器12內以及連接於處理容器12之各種配管內殘存著矽氧化膜之情況，藉由實行製程S6，可從處理容器12內以及連接於處理容器12之各種配管內來確實去除矽氧化膜。 Further, even if the tantalum oxide film remains in the processing container 12 and the various pipes connected to the processing container 12 after the process S4 shown in FIG. 9, the process S6 can be carried out from the processing container 12 and connected to the processing container. The various pipings of 12 do remove the tantalum oxide film.

此外，直到蝕刻有機膜OL2之製程S42k之前於處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)較直到蝕刻有機膜OL2之製程S42k之結束為止之保護膜SXa當中被蝕刻去除之膜的厚度(LE)來得厚。如此般，即便製 程S42k所致有機膜OL2之蝕刻結束後，由於在處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面會殘留矽氧化膜，故可避免出現以下之事態、亦即避免蝕刻中矽氧化膜被去除造成此等各表面露出而使得該各表面之狀態發生變化而從該各表面產生粒子等之事態。此外，由於基於製程S42k之有機膜OL2之蝕刻實行前係進行形成保護膜SX2之形成製程(從製程42b之後至製程S42g(YES)之製程)，而可避免因有機膜OL2之蝕刻所生活性種(例如氫自由基)和處理容器12之內側表面以及連接於處理容器12之各種配管之內側表面起反應，從而，可充分抑制從此等各表面產生粒子以及該各表面之狀態變化。 Further, the thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 until the process S42k for etching the organic film OL2 is etched out of the protective film SXa until the end of the process S42k of etching the organic film OL2 The thickness (LE) of the removed film is made thick. So, even if After the etching of the organic film OL2 by the process S42k is completed, since the ruthenium oxide film remains on the inner surface of the processing container 12 and the inner surface of the various pipes connected to the processing container 12, the following situation can be avoided, that is, etching is avoided. The intermediate oxide film is removed to cause the surfaces to be exposed, and the state of each surface is changed to generate particles or the like from the respective surfaces. In addition, since the formation process of the protective film SX2 is performed before the etching of the organic film OL2 based on the process S42k (from the process after the process 42b to the process of the process S42g (YES)), the etching life due to the etching of the organic film OL2 can be avoided. The species (for example, hydrogen radicals) reacts with the inner surface of the processing container 12 and the inner surfaces of the various tubes connected to the processing container 12, whereby particles generated from the respective surfaces and changes in the state of the respective surfaces can be sufficiently suppressed.

此外，直到蝕刻有機膜OL2之製程S42k之前於處理容器12內所形成之保護膜SXa之膜的厚度(LC1+LC2a)較被蝕刻層EL2之膜的厚度(LD)來得薄。如此般，因著處理容器12內以及連接於處理容器12之各種配管內所形成之保護膜SXa的厚度較被蝕刻層EL2之膜的厚度來得薄，處理容器12內以及連接於處理容器12之各種配管內之保護膜SXa會藉由被蝕刻層EL2之蝕刻而去除，故於製程S4之後所進行之處理容器12內以及連接於處理容器12之各種配管內之潔淨時，去除處理容器12內以及連接於處理容器12之各種配管內之矽氧化膜的處理(製程S6)將變得不必要。 Further, the thickness (LC1+LC2a) of the film of the protective film SXa formed in the processing container 12 before the process S42k of etching the organic film OL2 is thinner than the thickness (LD) of the film of the etched layer EL2. In this manner, the thickness of the protective film SXa formed in the processing container 12 and the various pipes connected to the processing container 12 is thinner than the thickness of the film of the etched layer EL2, and is disposed in the processing container 12 and connected to the processing container 12. The protective film SXa in each of the pipes is removed by etching by the etching layer EL2, so that the inside of the processing container 12 after the process S4 and the various pipes connected to the processing container 12 are cleaned, the inside of the processing container 12 is removed. And the treatment (process S6) of the tantalum oxide film connected to the various pipes of the processing container 12 becomes unnecessary.

以上，於較佳實施形態中圖示說明了本發明之原理，但本發明可在不脫離此種原理的前提下在配置以及細部上進行變更一事乃為業界人士所認知者。本發明不限於本實施形態所揭示之特定構成。從而，就申請專利範圍以及源自該精神之範圍所得全部修正以及變更請求保護權利。 The present invention has been described with reference to the preferred embodiments of the present invention, and it is understood by those skilled in the art that the present invention can be modified in the configuration and details without departing from the principles. The present invention is not limited to the specific configuration disclosed in the embodiment. Accordingly, all modifications and changes in the scope of the patent application and the scope of the spirit are claimed.

S1‧‧‧風乾 S1‧‧‧ dried

S2‧‧‧於室內形成保護膜 S2‧‧‧ Forming a protective film indoors

S3‧‧‧搬入晶圓 S3‧‧‧ Moving into the wafer

S4‧‧‧處理晶圓 S4‧‧‧Processing Wafer

S5‧‧‧搬出晶圓 S5‧‧‧ Moving out of the wafer

S6‧‧‧去除室內之保護膜 S6‧‧‧Removing protective film in the room

S7‧‧‧結束序列？ S7‧‧‧End sequence?

Claims (10)

一種被處理體之處理方法，具備下述製程：形成製程，係使得包含：第1製程，係對電漿處理裝置之處理容器內供給含胺基矽烷系氣體之第1氣體；第2製程，係於該第1製程之實行後沖洗該處理容器內之空間；第3製程，係於該第2製程之實行後在該處理容器內生成含氧氣體之第2氣體的電漿；以及第4製程，係於該第3製程之實行後沖洗該處理容器內之空間；之序列反覆實行以於該處理容器內形成矽氧化膜：準備製程，係於將該被處理體收容於該處理容器內之前所進行；以及處理製程，係對收容於該處理容器內之該被處理體進行蝕刻處理；該準備製程係於該處理製程之前進行；該形成製程係於該準備製程中實行、且於該處理製程中實行；該第1製程不生成該第1氣體之電漿。 A method for treating a target object, comprising: a process for forming a first process for supplying a first gas containing an amine-based decane-based gas into a processing container of a plasma processing apparatus; and a second process; Washing the space in the processing container after the execution of the first process; the third process is to generate a plasma of the second gas containing the oxygen gas in the processing container after the second process is performed; and the fourth The process is to rinse the space in the processing container after the execution of the third process; the sequence is repeated to form a tantalum oxide film in the processing container: the preparation process is performed to house the object to be processed in the processing container And performing a process for etching the object to be processed in the processing container; the preparation process is performed before the process; the forming process is performed in the preparation process, and The processing is performed; the first process does not generate the plasma of the first gas. 如申請專利範圍第1項之被處理體之處理方法，其中該第1氣體含單胺基矽烷。 The method of treating a treated object according to claim 1, wherein the first gas contains monoamine decane. 如申請專利範圍第1項之被處理體之處理方法，其中該第1氣體之胺基矽烷系氣體含有具1~3個矽原子之胺基矽烷。 The method for treating a target object according to the first aspect of the invention, wherein the amino-based decane-based gas of the first gas contains an amino decane having 1 to 3 germanium atoms. 如申請專利範圍第3項之被處理體之處理方法，其中該第1氣體之胺基矽烷系氣體含有具1~3個胺基之胺基矽烷。 The method for treating a target object according to claim 3, wherein the amino-based decane-based gas of the first gas contains an amino decane having 1 to 3 amine groups. 如申請專利範圍第1至3項中任一項之被處理體之處理方法，係進而具備：於該處理製程之後且為將該被處理體從該處理容器搬出後，將該處理容器內所具矽氧化膜加以去除之製程。 The processing method of the object to be processed according to any one of claims 1 to 3, further comprising: after the processing, and after the object to be processed is carried out from the processing container, the processing container is placed in the processing container A process with a ruthenium oxide film removed. 如申請專利範圍第1至3項中任一項之被處理體之處理方法，其中該被處理體具備被蝕刻層以及設置於該被蝕刻層上之有機膜；該處理製程具備有藉由該處理容器內所產生之電漿來蝕刻該有機膜之製程；該形成製程於該處理製程係在蝕刻該有機膜之該製程之前所實行；直到蝕刻該有機膜之該製程之前，於該處理容器內所形成之該矽氧化膜之膜的厚度係較直到蝕刻該有機膜之該製程結束為止之該矽氧化膜當中被蝕刻去除之膜的厚度來得厚。 The processing method of the object to be processed according to any one of claims 1 to 3, wherein the object to be processed includes an etched layer and an organic film provided on the etched layer; the process is provided by the process Processing the plasma generated in the container to etch the organic film; the forming process is performed before the process of etching the organic film; until the process of etching the organic film, the processing container The thickness of the film of the tantalum oxide film formed therein is thicker than the thickness of the film which is removed by etching in the tantalum oxide film until the end of the process of etching the organic film. 如申請專利範圍第6項之被處理體之處理方法，其中直到蝕刻該有機膜之該製程之前於該處理容器內所形成之該矽氧化膜之膜的厚度係較該被蝕刻層之膜的厚度來得薄。 The processing method of the object to be processed according to claim 6, wherein the thickness of the film of the tantalum oxide film formed in the processing container before the process of etching the organic film is smaller than the film of the layer to be etched The thickness is thin. 如申請專利範圍第1至3項中任一項之被處理體之處理方法，其中該被處理體具備被蝕刻層以及設置於該被蝕刻層上之有機膜；該處理製程具備藉由在該處理容器內所產生之電漿來蝕刻該有機膜之製程；該形成製程於該處理製程中係於蝕刻該有機膜之該製程之前實行；該有機膜上設有第1遮罩；該處理製程進而具有：藉由該處理容器內所產生之電漿來將上面具有阻劑遮罩之抗反射膜加以蝕刻而從該抗反射膜形成該第1遮罩之製程；蝕刻該有機膜之該製程係於蝕刻該抗反射膜之該製程之後所實行；於該處理製程，該形成製程係於蝕刻該抗反射膜之該製程與蝕刻該有機膜之該製程之間所實行；該處理製程進而具有：於該形成製程與蝕刻該有機膜之該製程之間，藉由該處理容器內所產生之電漿來將藉由該形成製程所形成之該矽氧化膜當中之該有機膜之表面上的區域加以去除之製程。 The processing method of the object to be processed according to any one of claims 1 to 3, wherein the object to be processed includes an etched layer and an organic film provided on the etched layer; the processing process is provided by Processing the plasma generated in the container to etch the organic film; the forming process is performed in the process prior to the process of etching the organic film; the organic film is provided with a first mask; the processing process Further, the method further comprises: etching the anti-reflection film having the resist mask thereon by etching the plasma generated in the processing container to form the first mask from the anti-reflection film; and etching the organic film After the process of etching the anti-reflective film is performed; in the process, the forming process is performed between the process of etching the anti-reflective film and the process of etching the organic film; the processing process further has Between the forming process and the etching process of the organic film, the plasma generated in the processing container is used on the surface of the organic film among the tantalum oxide films formed by the forming process. The process of removing the area. 如申請專利範圍第1至3項中任一項之被處理體之處理方法，其中該被處理體具備有被蝕刻層、設置於該被蝕刻層上之有機膜、以及設置於該有機膜上之抗反射膜；該處理製程具備：藉由該處理容器內所產生之電漿來蝕刻該有機膜之製程；該形成製程於該處理製程中係於蝕刻該有機膜之該製程之前所實行；於該抗反射膜上設有第1遮罩；該處理製程包含下述製程：藉由該形成製程在該第1遮罩上以及該抗反射膜上形成了該矽氧化膜之後，利用該處理容器內所產生之電漿來將該矽氧化膜當中之該抗反射膜上之區域與該第1遮罩之上面之上之區域加以去除，來形成基於該矽氧化膜當中之該第1遮罩之側面上之區域的第2遮罩之製程； 藉由該處理容器內所產生之電漿來去除該第1遮罩之製程；以及藉由該處理容器內所產生之電漿來蝕刻該抗反射膜之製程；蝕刻該有機膜之該製程係於蝕刻該抗反射膜之該製程之後所實行，而形成由該有機膜所構成之第3遮罩。 The method of treating a target object according to any one of claims 1 to 3, wherein the object to be processed is provided with an etched layer, an organic film provided on the etched layer, and an organic film disposed on the organic film An anti-reflection film; the process includes: a process of etching the organic film by using a plasma generated in the processing container; the forming process is performed before the process of etching the organic film in the process; Providing a first mask on the anti-reflection film; the process includes the following process: after the germanium oxide film is formed on the first mask and the anti-reflection film by the forming process, the process is utilized a plasma generated in the container to remove a region on the anti-reflection film and a region above the first mask of the tantalum oxide film to form the first mask based on the tantalum oxide film The process of the second mask in the area on the side of the cover; The process of removing the first mask by the plasma generated in the processing container; and the process of etching the anti-reflection film by the plasma generated in the processing container; and the process system for etching the organic film After the process of etching the anti-reflection film is performed, a third mask composed of the organic film is formed. 如申請專利範圍第8項之被處理體之處理方法，其中當該形成製程係於該處理製程中實行之情況，該第1製程中之該被處理體之溫度為攝氏0度以上且為該第1遮罩所含材料之玻璃轉化溫度以下。 The processing method of the object to be processed according to claim 8, wherein when the forming process is performed in the processing, the temperature of the object to be processed in the first process is 0 degrees Celsius or more and is The glass transition temperature of the material contained in the first mask is below.
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JP7071175B2 (en) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 How to process the object to be processed
KR102582762B1 (en) * 2017-05-11 2023-09-25 주성엔지니어링(주) Substrate processing method and method of manufacturing organic light emitting device using the same
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US20040018742A1 (en) * 2002-07-25 2004-01-29 Applied Materials, Inc. Forming bilayer resist patterns
US6803315B2 (en) * 2002-08-05 2004-10-12 International Business Machines Corporation Method for blocking implants from the gate of an electronic device via planarizing films
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JP5275093B2 (en) 2009-03-13 2013-08-28 東京エレクトロン株式会社 Substrate processing method
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JP5956933B2 (en) * 2013-01-15 2016-07-27 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP6230898B2 (en) * 2013-12-13 2017-11-15 東京エレクトロン株式会社 Etching method
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