TWI763810B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method

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TWI763810B
TWI763810B TW107110416A TW107110416A TWI763810B TW I763810 B TWI763810 B TW I763810B TW 107110416 A TW107110416 A TW 107110416A TW 107110416 A TW107110416 A TW 107110416A TW I763810 B TWI763810 B TW I763810B
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gas
space
substrate
processing apparatus
processing
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TW201900917A (en
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小川裕之
大久保智也
清水昭貴
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本發明係提供一種對處理容器內所載置之晶圓供應氣體時，可調整氣體濃度的面內分佈之技術。 The present invention provides a technique for adjusting the in-plane distribution of gas concentration when supplying gas to a wafer placed in a processing container.

在對處理容器內所載置之晶圓供應氣體來進行處理之電漿處理裝置中，係藉由分隔部來將處理容器內區劃為會激發NF3氣體、O2氣體及H2氣體之電漿空間，與對晶圓進行自由基處理之處理空間。然後，係構成為會透過分隔部所形成之槽縫來供應在電漿空間中所激發的NF3氣體、O2氣體及H2氣體而作為自由基，且由分隔部下面之載置台中央側的中央側氣體供應部與載置台周緣側的周緣側氣體供應部來供應Ar氣體。 In a plasma processing apparatus that processes a wafer placed in a processing container by supplying a gas, the inside of the processing container is divided into electric fields that excite NF 3 gas, O 2 gas, and H 2 gas by a partition. Slurry space, and processing space for free radical processing of wafers. Then, the NF 3 gas, O 2 gas, and H 2 gas excited in the plasma space are supplied as radicals through the slit formed by the partition portion, and the center side of the mounting table under the partition portion is formed. Ar gas is supplied from the center side gas supply part and the peripheral edge side gas supply part on the peripheral side of the mounting table.

Description

基板處理裝置及基板處理方法 Substrate processing apparatus and substrate processing method

本發明關於一種對處理容器內所載置之基板供應氣體來進行處理之技術。 The present invention relates to a technology for processing a substrate placed in a processing container by supplying gas.

作為半導體製造過程的其中一種有將反應氣體電漿化來進行蝕刻、成膜處理等之電漿處理。作為上述般的電漿處理裝置，已知有一種如專利文獻1所記載般，在處理容器內而於處理容器的上部側將處理氣體激發來電漿化，且將通過離子捕集部之自由基供應至基板之電漿處理裝置。 As one of the semiconductor manufacturing processes, there is plasma treatment in which a reaction gas is plasmatized to perform etching, film formation, and the like. As a plasma processing apparatus as described above, as described in Patent Document 1, a process gas is excited to plasma in the upper part of the processing container in the processing container, and radicals passing through the ion trapping section are converted into plasma. Supply to the plasma processing device of the substrate.

有一種方法係在電漿處理中，於處理容器內激發處理氣體時會對例如天線供應高頻電功率，來使處理容器內產生感應電場，而將被供應至處理容器內之處理氣體激發再供應至半導體晶圓(以下稱作「晶圓」)。然而，由於在空間內用以激發處理氣體之感應電場並非均勻，故電漿的分佈亦會容易變得不均勻。再者，電漿的分佈會容易受到磁場或電場的影響，而有難以調整其密度之問題。於是，便難以針對被供應至晶圓之自由基的面內分佈來獲得良好的均勻性。近年來，伴隨著晶圓所形成之電路圖案的微細化，針對晶圓處理的面內均勻性而被要求更高的精確度，於是，已被要求一種在處理模組中會調整針對基板之處理的面內分佈之技術。 There is a method in plasma processing. When the processing gas is excited in the processing container, high-frequency electric power is supplied to, for example, an antenna, so that an induced electric field is generated in the processing container, and the processing gas supplied into the processing container is excited and then supplied. to semiconductor wafers (hereinafter referred to as "wafers"). However, since the induced electric field used to excite the process gas in the space is not uniform, the distribution of the plasma tends to become non-uniform. Furthermore, the distribution of plasma is easily affected by a magnetic field or an electric field, and it is difficult to adjust its density. Thus, it is difficult to obtain good uniformity for the in-plane distribution of radicals supplied to the wafer. In recent years, with the miniaturization of circuit patterns formed on wafers, higher precision has been required for the in-plane uniformity of wafer processing. Therefore, there has been a demand for a process module that adjusts the in-plane uniformity for the substrate. Techniques for in-plane distribution of processing.

專利文獻2中雖記載一種對晶圓W的周緣部供應附加氣體，並調整氣體的濃度以調整晶圓W的面內均勻性之技術，但有無法對晶圓W的中心側供應附加氣體之問題。又，亦未考慮將處理氣體電漿化來供應至晶圓之範例。 Patent Document 2 describes a technique of supplying an additional gas to the peripheral portion of the wafer W and adjusting the concentration of the gas to adjust the in-plane uniformity of the wafer W, but there is a problem that the additional gas cannot be supplied to the center side of the wafer W. question. Also, the example of plasma supplying the process gas to the wafer is not considered.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

專利文獻1：日本特開2006-324023號公報 Patent Document 1: Japanese Patent Laid-Open No. 2006-324023

專利文獻2：日本專利第5192214號公報 Patent Document 2: Japanese Patent No. 5192214

本發明係鑑於上述般情事所發明者，其目的為提供一種對處理容器內所載置之基板供應氣體時，可調整氣體濃度的面內分佈之技術。 The present invention has been made in view of the above-mentioned general circumstances, and an object thereof is to provide a technology capable of adjusting the in-plane distribution of gas concentration when supplying gas to a substrate placed in a processing container.

本發明之基板處理裝置係將基板載置於處理容器內的載置台來供應氣體而對基板進行處理之基板處理裝置，具備有：分隔部，係與該載置台呈對向設置，而設置於配置有基板的處理空間與擴散有第1氣體的擴散空間之間；第1氣體供應部，係用以將該第1氣體供應至該擴散空間；複數第1氣體噴出孔，係在厚度方向上貫穿該分隔部所形成，而用以將擴散至該擴散空間之第1氣體噴出至該處理空間；以及第2氣體供應部，係包含有開口在該分隔部中之該處理空間側的氣體噴出面之複數第2氣體噴出孔，來將獨立於該第1氣體之第2氣體供應至處理空間；該第2氣體供應部係具備有以會對處理空間中在水平方向上被分割之每個複數區域分別獨立地供應第2氣體之方式來加以構成的各區域之氣體供應部。 The substrate processing apparatus of the present invention is a substrate processing apparatus for processing a substrate by placing a substrate on a mounting table in a processing container, and supplying gas to process the substrate. between the processing space in which the substrate is disposed and the diffusion space in which the first gas is diffused; the first gas supply part is used for supplying the first gas to the diffusion space; the plurality of first gas ejection holes are arranged in the thickness direction a second gas supply part formed through the partition part for ejecting the first gas diffused into the diffusion space to the processing space; and a second gas supply part including a gas ejection opening in the partition part on the side of the processing space A plurality of second gas ejection holes on the surface are used to supply a second gas independent of the first gas to the processing space; the second gas supply part is provided with a face to face each horizontally divided gas in the processing space. The gas supply part of each area|region is comprised so that a several area|region may supply a 2nd gas independently.

本發明之基板處理方法，係使用上述基板處理裝置之基板處理方法，具有以下工序：蝕刻工序，係將被供應至該擴散空間之該第1氣體活性化並供應至該處理空間，來蝕刻該基板表面所形成的矽氮化膜；分佈調整工序，係為了調整該處理空間中該經活性化後之該第1氣體的分佈，而對橫向地並排在該處理空間中之複數區域分別供應第2氣體；以及在該蝕刻工序及該分佈調整工序後進行，會將用以去除該矽氮化膜表面處的氧化膜之氧化膜去除氣體透過該擴散空間而從該第1氣體供應部來供應至該處理空間，或從該第2氣體供應部來供應至該處理空間之工序。 The substrate processing method of the present invention is a substrate processing method using the above-mentioned substrate processing apparatus, and includes the following steps: an etching step of activating the first gas supplied to the diffusion space and supplying it to the processing space to etch the The silicon nitride film formed on the surface of the substrate; the distribution adjustment process is to adjust the distribution of the activated first gas in the processing space, and supply the first gas to a plurality of regions laterally side by side in the processing space respectively 2 gas; and performed after the etching process and the distribution adjustment process, the oxide film removal gas for removing the oxide film on the surface of the silicon nitride film is supplied from the first gas supply part through the diffusion space A process of supplying to the processing space, or from the second gas supply unit to the processing space.

本發明係在對處理容器內所載置之被處理基板供應氣體之基板處理裝置中，藉由分隔部來將處理容器內區劃為使氣體擴散之擴散區域，以及對基板進行氣體處理之處理區域，來對擴散空間供應第1氣體。被供應至擴散空間之第1氣體係透過形成於分隔部的第1氣體供應孔來做供應，並且由設置於分隔部的下面之第2氣體供應孔來獨立於第1氣體而將第2氣體供應至處理空間。再者，在供應第2氣體時，係相互獨立地設置有會對包含有基板的中心軸之中央區域供應第2氣體之中央側氣體供應部，以及從圍繞中央區域之周緣區域來供應第2氣體之周緣側氣體供應部。於是，便可在載置台的中心側與載置台的周緣側處獨立地改變第2氣體的供應量，從而可調整基板之氣體處理的面內分佈。 According to the present invention, in a substrate processing apparatus for supplying gas to a substrate to be processed placed in a processing container, the interior of the processing container is divided into a diffusion area for diffusing gas and a processing area for performing gas processing on the substrate by a partition. , to supply the first gas to the diffusion space. The first gas system supplied to the diffusion space is supplied through the first gas supply hole formed in the partition, and the second gas is supplied independently of the first gas by the second gas supply hole provided on the lower surface of the partition. Supply to the processing space. In addition, when supplying the second gas, a center-side gas supply part that supplies the second gas to the center region including the center axis of the substrate, and the second gas supply part from the peripheral region surrounding the center region are provided independently of each other. Gas supply part on the peripheral side of the gas. Therefore, the supply amount of the second gas can be independently changed at the center side of the stage and the peripheral side of the stage, and the in-plane distribution of the gas processing of the substrate can be adjusted.

2‧‧‧電漿處理裝置 2‧‧‧Plasma processing device

3‧‧‧載置台 3‧‧‧Place

4、8‧‧‧噴淋板 4. 8‧‧‧Sprinkler plate

5‧‧‧分隔部 5‧‧‧Partition

7‧‧‧噴淋頭 7‧‧‧Sprinkler

20‧‧‧處理容器 20‧‧‧Disposal container

41A‧‧‧中央側氣體噴出孔 41A‧‧‧Center side gas ejection hole

41B‧‧‧周緣側氣體噴出孔 41B‧‧‧Circumferential gas ejection hole

42‧‧‧槽縫 42‧‧‧Slots

51‧‧‧離子捕集部 51‧‧‧Ion trapping section

D‧‧‧擴散空間 D‧‧‧Diffusion space

P‧‧‧電漿空間 P‧‧‧plasma space

S‧‧‧處理空間 S‧‧‧processing space

W‧‧‧晶圓 W‧‧‧Wafer

圖1為第1實施型態相關之多腔室系統的平面圖。 FIG. 1 is a plan view of a multi-chamber system according to the first embodiment.

圖2為第1實施型態相關之電漿處理裝置的縱剖視圖。 FIG. 2 is a longitudinal cross-sectional view of the plasma processing apparatus according to the first embodiment.

圖3從上方側來觀看噴淋板之平面圖。 Fig. 3 is a plan view of the shower panel viewed from above.

圖4從下方來觀看噴淋板之平面圖。 Figure 4 is a plan view of the shower panel viewed from below.

圖5為該噴淋板的縱剖視圖。 Fig. 5 is a longitudinal sectional view of the shower plate.

圖6為該噴淋板的橫剖視圖。 FIG. 6 is a cross-sectional view of the shower plate.

圖7為該噴淋板的剖面立體圖。 FIG. 7 is a cross-sectional perspective view of the shower plate.

圖8為離子捕集部的剖視圖。 8 is a cross-sectional view of an ion trap.

圖9係顯示離子捕集部之平面圖。 FIG. 9 is a plan view showing an ion trap.

圖10係顯示電漿處理裝置的作用之說明圖。 FIG. 10 is an explanatory diagram showing the operation of the plasma processing apparatus.

圖11係顯示電漿處理裝置的作用之說明圖。 FIG. 11 is an explanatory diagram showing the operation of the plasma processing apparatus.

圖12為本發明實施型態的其他範例中之噴淋板的說明圖。 FIG. 12 is an explanatory diagram of a shower plate in another example of the embodiment of the present invention.

圖13係顯示進行有本發明基板處理的晶圓之剖視圖。 13 is a cross-sectional view showing a wafer subjected to substrate processing of the present invention.

圖14係顯示本發明實施型態之其他範例的作用之說明圖。 FIG. 14 is an explanatory diagram showing the function of another example of the embodiment of the present invention.

圖15係顯示本發明實施型態之其他範例的作用之說明圖。 FIG. 15 is an explanatory diagram showing the function of another example of the embodiment of the present invention.

圖16係顯示蝕刻處理後的晶圓之剖視圖。 FIG. 16 is a cross-sectional view showing the wafer after the etching process.

圖17係顯示第2實施型態相關之噴淋板的上面側之平面圖。 Fig. 17 is a plan view showing the upper surface side of the shower plate according to the second embodiment.

圖18係顯示第2實施型態相關之噴淋板的下面側之平面圖。 Fig. 18 is a plan view showing the lower surface side of the shower plate according to the second embodiment.

圖19係顯示第2實施型態相關之噴淋板的縱剖視圖。 Fig. 19 is a longitudinal cross-sectional view showing a shower plate according to the second embodiment.

圖20係顯示第2實施型態相關之噴淋板的縱剖視圖。 Fig. 20 is a longitudinal cross-sectional view showing a shower plate according to the second embodiment.

圖21係顯示第3實施型態相關之基板處理裝置的縱剖視圖。 FIG. 21 is a longitudinal cross-sectional view showing a substrate processing apparatus according to the third embodiment.

圖22係顯示第3實施型態相關之噴淋頭的平面圖。 Fig. 22 is a plan view showing a shower head according to the third embodiment.

圖23係顯示第3實施型態相關之噴淋頭的平面圖。 Fig. 23 is a plan view showing a shower head according to the third embodiment.

[第1實施型態] [the first embodiment]

針對將第1實施型態相關之基板處理裝置應用於電漿處理裝置之範例來加以說明。圖1係顯示具備電漿處理裝置且為多腔室系統之真空處理裝置。真空處理裝置係具備有藉由乾燥氣體(例如乾燥後的氮氣)來將其內部氛圍保持為常壓氛圍之橫向長方形的常壓搬送室12，常壓搬送室12的前方係並排地設置有用以載置搬送容器C之3台載置埠11。 An example in which the substrate processing apparatus according to the first embodiment is applied to a plasma processing apparatus will be described. FIG. 1 shows a vacuum processing apparatus having a plasma processing apparatus and being a multi-chamber system. The vacuum processing apparatus is provided with a horizontally rectangular normal-pressure transfer chamber 12 whose internal atmosphere is maintained at normal pressure by a drying gas (eg, dried nitrogen). The three placement ports 11 of the transport container C are placed.

常壓搬送室12的正面壁係安裝有會和該搬送容器C的蓋一起被開閉之門17。常壓搬送室12內係設置有用以搬送晶圓W而由關節臂所構成的搬送機構15。常壓搬送室12中之載置埠11的相反側係並排地配置有例如2個加載互鎖室13。加載互鎖室13與常壓搬送室12之間係設置有閘閥18，從加載互鎖室13的常壓搬送室12側來觀看，深處側係透過閘閥19而配置有真空搬送室10。 A door 17 that can be opened and closed together with the lid of the transfer container C is attached to the front wall of the normal-pressure transfer chamber 12 . Inside the normal-pressure transfer chamber 12, a transfer mechanism 15 composed of an articulated arm for transferring the wafer W is provided. For example, two load-lock chambers 13 are arranged side by side on the opposite side of the mounting port 11 in the normal pressure transfer chamber 12 . A gate valve 18 is provided between the load lock chamber 13 and the normal pressure transfer chamber 12 , and the vacuum transfer chamber 10 is disposed on the deep side through the gate valve 19 when viewed from the normal pressure transfer chamber 12 side of the load lock chamber 13 .

真空搬送室10係連接有會進行例如成膜處理、PHT(Post Heat Treatment)處理及電漿處理之製程模組1。真空搬送室10係設置有具備關節臂所構成的2根搬送臂之搬送機構16，藉由搬送機構16而在各加載互鎖室13及各製程模組1之間進行晶圓W的傳遞。又，真空處理裝置中的常壓搬送室12係連接有用以冷卻晶圓W之冷卻裝置14。例如，成膜裝置會例如在晶圓W成膜出氮化矽(SiN)膜，並且PHT裝置會加熱電漿處理後的晶圓W，來使電漿處理中所生成的反應生成物昇華。 The vacuum transfer chamber 10 is connected to a process module 1 that performs, for example, film formation processing, PHT (Post Heat Treatment) processing, and plasma processing. The vacuum transfer chamber 10 is provided with a transfer mechanism 16 including two transfer arms composed of articulated arms. The transfer mechanism 16 transfers wafers W between the load-lock chambers 13 and the process modules 1 . In addition, a cooling device 14 for cooling the wafer W is connected to the normal pressure transfer chamber 12 in the vacuum processing apparatus. For example, the film forming apparatus forms a silicon nitride (SiN) film on the wafer W, and the PHT apparatus heats the plasma-treated wafer W to sublimate the reaction product generated in the plasma treatment.

接著，針對真空處理裝置所設置之製程模組1中的電漿處理裝置2，亦參閱圖2來加以說明。此處係以將例如三氟化氮(NF3)氣體、氧(O2)氣、及 H2氣體激發，且使用激發後的自由基來對形成於晶圓W之SiN膜進行蝕刻之電漿處理裝置為例來加以說明。電漿處理裝置2係具有鋁等金屬製真空容器所構成的處理容器20。如圖2所示，電漿處理裝置係具有左右並排而被加以連結之2個處理容器20，被連結的2個處理容器20之前後方向一面側係形成有用以在與圖1所示的真空搬送室10之間進行晶圓W的搬出入，且為2個處理容器20所共通之搬送口22，該搬送口22係藉由閘閥21而構成為開閉自如。 Next, the plasma processing apparatus 2 in the process module 1 provided in the vacuum processing apparatus is also described with reference to FIG. 2 . Here, for example, nitrogen trifluoride (NF 3 ) gas, oxygen (O 2 ) gas, and H 2 gas are excited, and the excited radicals are used to etch the SiN film formed on the wafer W. A pulp processing apparatus will be described as an example. The plasma processing apparatus 2 has a processing chamber 20 formed of a metal vacuum vessel such as aluminum. As shown in FIG. 2 , the plasma processing apparatus has two processing containers 20 that are connected side by side and are connected, and the two connected processing containers 20 are formed with one side in the front-rear direction so as to be in a vacuum as shown in FIG. 1 . Wafers W are carried in and out between the transfer chambers 10 , and is a transfer port 22 common to the two processing containers 20 , and the transfer port 22 is configured to be freely openable and closable by a gate valve 21 .

如圖2所示，被連結的處理容器20內係藉由上部側所設置之隔壁23與隔壁23的下方所設置之區劃壁24而被區隔為各處理容器20。區劃壁24係藉由例如升降機構25而構成為升降自如，使區劃壁24下降時，雖然2個處理容器20中置放有載置台3的處理空間彼此會連通，可將晶圓W搬入至各處理容器20內，但藉由使區劃壁24上升，則2個處理空間便會被相互地加以區隔。此外，由於電漿處理裝置2中的2個處理容器20內係構成為大致相同，故以下便針對其中一處理容器20來加以說明。 As shown in FIG. 2 , the inside of the connected processing containers 20 is partitioned into each processing container 20 by a partition wall 23 provided on the upper side and a partition wall 24 provided below the partition wall 23 . The partition wall 24 is configured to be able to move up and down, for example, by the elevating mechanism 25. When the partition wall 24 is lowered, although the processing spaces in which the stage 3 is placed in the two processing containers 20 are communicated with each other, the wafer W can be loaded into the chamber. In each processing container 20, by raising the partition wall 24, the two processing spaces are mutually partitioned. In addition, since the inner structures of the two processing containers 20 in the plasma processing apparatus 2 are substantially the same, one of the processing containers 20 will be described below.

如圖1、圖2所示，處理容器2係配置有用以水平地保持晶圓W之載置台3。又，載置台3的內部係形成有調溫流道33，調溫流道係流通有例如水等調溫用媒介，在後述的自由基處理中，會將晶圓W的溫度調整為例如10~120℃。又，載置台3係於圓周方向等間隔地設置有3根從載置台表面出沒般所設置之升降銷(圖中未顯示)。 As shown in FIGS. 1 and 2 , the processing container 2 is provided with a mounting table 3 for holding the wafer W horizontally. In addition, a temperature-adjusting flow channel 33 is formed inside the mounting table 3, and a temperature-adjusting medium such as water flows through the temperature-adjusting flow channel. In the radical treatment described later, the temperature of the wafer W is adjusted to, for example, 10 ~120℃. In addition, the mounting table 3 is provided with three lift pins (not shown in the figure) which are provided so as to protrude from the surface of the mounting table at equal intervals in the circumferential direction.

各處理容器20中之頂板部分係設置有例如石英板等所構成的介電窗26。各介電窗26的上面側係載置有漩渦狀的平面線圈所構成之高頻天線27。線圈狀高頻天線27的端部係透過匹配器28而連接有會輸出例如200~1200W的高頻之高頻電源29。高頻天線27、匹配器28及高頻電源29係相當於電漿產生部。 The top plate portion of each processing container 20 is provided with a dielectric window 26 formed of, for example, a quartz plate. On the upper surface side of each dielectric window 26, a high-frequency antenna 27 composed of a spiral planar coil is mounted. The end of the coil-shaped high-frequency antenna 27 is connected to a high-frequency power supply 29 that outputs a high frequency of, for example, 200 to 1200 W through a matching device 28 . The high-frequency antenna 27, the matching device 28, and the high-frequency power source 29 correspond to the plasma generating unit.

又，各處理容器20皆形成有用以供應第1氣體之氣體供應口34，氣體供應口34係連接有氣體供應管35的一端側。氣體供應管35的另一端側係分歧為3根，各端部係分別連接有NF3氣體供應源36、H2氣體供應源37及O2氣體供應源38。此外，圖2中的V1~V3為閥體，M1~M3為流量調整部。藉此，便會構成為可分別以特定流量來將NF3氣體、H2氣體及O2氣體 供應至處理容器20內。從氣體供應口34所供應之該等氣體係相當於第1氣體。 In addition, each processing container 20 is formed with a gas supply port 34 for supplying the first gas, and the gas supply port 34 is connected to one end side of a gas supply pipe 35 . The other end side of the gas supply pipe 35 is branched into three pieces, and each end is connected with a NF 3 gas supply source 36 , an H 2 gas supply source 37 and an O 2 gas supply source 38 respectively. In addition, V1-V3 in FIG. 2 is a valve body, and M1-M3 is a flow rate adjustment part. Thereby, it is comprised so that NF 3 gas, H 2 gas, and O 2 gas can be supplied into the processing container 20 at a specific flow rate, respectively. These gas systems supplied from the gas supply port 34 correspond to the first gas.

處理容器20中之載置台3的上方係設置有分隔部5，會將處理容器20內分隔為供NF3氣體、O2氣體及H2氣體擴散之擴散空間且為激發電漿之電漿空間P，以及對載置台3所載置的晶圓W進行自由基處理之處理空間S。 A partition 5 is arranged above the mounting table 3 in the processing container 20, which divides the processing container 20 into a diffusion space for the diffusion of NF 3 gas, O 2 gas and H 2 gas and a plasma space for exciting plasma P, and a processing space S in which radical processing is performed on the wafer W mounted on the mounting table 3 .

分隔部5係具備有噴淋板4與離子捕集部51，而從下方側依此順序來加以配置。由於噴淋板4及離子捕集部51會有因相互的熱膨脹率差而摩擦便產生微粒之虞，故係使用例如間隔件等而以不會相互接觸之方式透過間隙來加以配置。 The partition part 5 is provided with the shower plate 4 and the ion trap part 51, and is arrange|positioned in this order from the downward side. Since the shower plate 4 and the ion trap 51 may generate particles due to friction due to the difference in the thermal expansion coefficients, they are arranged through the gap so as not to contact each other using, for example, a spacer.

有關噴淋板4，亦參閱圖3~圖7來加以說明。圖3係顯示從上方側來觀看各處理容器20所設置的噴淋板4之圖式，圖4係顯示從載置台3側來觀看一處理容器20內的噴淋板4之平面圖。又，圖5為噴淋板4的縱剖視圖，圖6係顯示從載置台3側來觀看噴淋板4的橫剖面之剖視圖，圖7係顯示以剖面來呈現噴淋板4的一部分之立體圖。此外圖7中，形成於凸緣400之氣體擴散流道45及氣體導入道403的頂面雖係藉由板狀的組件而被封閉，但為了便於說明，係將氣體擴散流道45及氣體導入道403的頂面開放來加以顯示。如後所述，噴淋板4內雖形成有用以將第2氣體(即非活性氣體，例如氬(Ar)氣)供應至處理空間S側之流道，但在圖2中，噴淋板4的剖面由於製圖的困難性，故係以斜線來加以顯示，而針對後述之內部的流道並未加以顯示。噴淋板4係由例如鋁板所構成，如圖3所示，將各處理容器20內加以分隔之噴淋板4係構成為相互連接之1片板狀體40。 The shower plate 4 is also described with reference to FIGS. 3 to 7 . 3 is a diagram showing the shower plate 4 provided in each processing container 20 viewed from above, and FIG. 4 is a plan view showing the shower plate 4 in one processing container 20 viewed from the mounting table 3 side. 5 is a longitudinal sectional view of the shower plate 4, FIG. 6 is a cross-sectional view showing a cross section of the shower plate 4 viewed from the side of the mounting table 3, and FIG. 7 is a perspective view showing a part of the shower plate 4 in cross section. . In addition, in FIG. 7 , although the top surfaces of the gas diffusion channels 45 and the gas introduction channels 403 formed in the flange 400 are closed by plate-shaped components, for the convenience of description, the gas diffusion channels 45 and the gas The top surface of the lead-in 403 is opened for display. As will be described later, a flow channel for supplying a second gas (that is, an inert gas, such as argon (Ar) gas) to the processing space S side is formed in the shower plate 4, but in FIG. 2 , the shower plate is Section 4 is shown with oblique lines due to the difficulty of drawing, but not shown for the internal flow path described later. The shower plate 4 is composed of, for example, an aluminum plate, and as shown in FIG. 3 , the shower plate 4 partitioning the inside of each processing container 20 is constituted as a single plate-like body 40 connected to each other.

板狀體40中之噴淋板4的周圍係形成有凸緣400，噴淋板4係構成為將凸緣400插入至處理容器20的周壁內來加以固定，而透過該凸緣400來使噴淋板4的熱在處理容器20的內壁傳遞並擴散。又，亦可構成為凸緣400的內部係形成有冷媒流道來冷卻噴淋板4。 A flange 400 is formed around the shower plate 4 of the plate-shaped body 40 , the shower plate 4 is configured such that the flange 400 is inserted into the peripheral wall of the processing container 20 to be fixed, and through the flange 400 The heat of the shower plate 4 is transferred and diffused on the inner wall of the processing container 20 . Moreover, it is good also as a structure in which a refrigerant|coolant flow path is formed in the inside of the flange 400, and the shower plate 4 is cooled.

如圖3、圖4所示，若以處理容器20的並排方向為左右，則將噴淋板4分隔為前後之2個半圓狀的區域係於左右方向並排地形成有分別延伸於前後方向，且在厚度方向上貫穿噴淋板4般所形成的槽縫42。如圖5所示，槽縫42係構成為例如寬度會較後述離子捕集部51所形成的槽縫42要廣， 且構成為會朝向下面側的開口部而口徑擴張。又，槽縫42之開口部的端部為倒角，而構成為會抑制通過槽縫42之氣體的傳導率降低。 As shown in FIGS. 3 and 4 , if the side-by-side direction of the processing containers 20 is the left and right, two semicircular regions dividing the shower plate 4 into the front and rear are formed side by side in the left-right direction, respectively extending in the front-rear direction. And it penetrates the slot 42 generally formed by the shower plate 4 in the thickness direction. As shown in FIG. 5, the slit 42 is comprised so that the width may be wider than the slit 42 formed in the ion trap part 51 mentioned later, for example, and is comprised so that the diameter may expand toward the opening part on the lower surface side. Moreover, the edge part of the opening part of the slot 42 is chamfered, and it is comprised so that the reduction of the conductivity of the gas which passes through the slot 42 may be suppressed.

又，如圖4、圖6所示，噴淋板4的內部係形成有在形成槽縫42的半圓狀區域之間而往左右方向(處理容器20的並排方向)延伸之氣體供應道43。氣體供應道43中之噴淋板4中央附近的部位係橫跨噴淋板4中央附近的圓形區域(中央區域)，而於各槽縫42的間隙形成有從氣體供應道43往正交之方向(前後方向)分歧之複數中央側氣體供應道44。又，如圖4、圖6及圖7所示，氣體供應道43中之噴淋板4的周緣側端部係連接於凸緣400內部所形成之中央側氣體導入埠402。中央側氣體導入埠402係透過中央側氣體供應管47而連接有Ar氣體供應源48，中央側氣體供應管47係自上游側設置有流量調整部M4及閥體V4。又，如圖4、圖5及圖7所示，中央側氣體供應道44係分散地形成有開口在噴淋板4的載置台3側一面(即氣體噴出面)之中央側氣體噴出孔41A。該氣體供應道43、中央側氣體供應道44、中央側氣體導入道402、中央側氣體供應管47、Ar氣體供應源48、流量調整部M4、閥體V4及中央側氣體噴出孔41A係相當於中央側氣體供應部。 4 and 6, a gas supply passage 43 extending in the left-right direction (the parallel direction of the processing containers 20) is formed between the semicircular regions where the slits 42 are formed in the shower plate 4. The portion near the center of the shower plate 4 in the gas supply channel 43 straddles the circular area (central area) near the center of the shower plate 4, and the gap from the gas supply channel 43 is formed in the gap of each slot 42 to be perpendicular to each other. A plurality of central side gas supply passages 44 diverge in the direction (front-rear direction). 4 , 6 and 7 , the peripheral end of the shower plate 4 in the gas supply channel 43 is connected to the central gas introduction port 402 formed in the flange 400 . The center-side gas introduction port 402 is connected to the Ar gas supply source 48 through the center-side gas supply pipe 47, and the center-side gas supply pipe 47 is provided with a flow rate adjustment part M4 and a valve body V4 from the upstream side. 4 , 5 and 7 , the center-side gas supply passages 44 are dispersedly formed with center-side gas ejection holes 41A opening on the surface (ie, the gas ejection surface) of the shower plate 4 on the mounting table 3 side. . The gas supply passage 43 , the center side gas supply passage 44 , the center side gas introduction passage 402 , the center side gas supply pipe 47 , the Ar gas supply source 48 , the flow rate adjustment part M4 , the valve body V4 and the center side gas ejection hole 41A are equivalent in the central gas supply part.

又，如圖4、圖6及圖7所示，噴淋板4前後周圍處的凸緣400內部係形成有沿該噴淋板4的周緣而延伸成圓弧狀之氣體擴散流道45，噴淋板4中之中央區域周圍的周緣區域內部則於各槽縫42的間隙形成有從氣體擴散流道45分歧而延伸於前後方向之周緣側氣體供應道46。各氣體擴散流道45係從在長度方向上將各個氣體擴散流道45二等分之位置起，朝向板狀體40的周緣側且延伸於前後方向般地拉出形成有連接流道404。更具體地敘述，如上所述，氣體擴散流道45雖為圓弧狀，但連接流道404係沿該圓弧的法線方向所形成。然後，該連接流道404的上游側係彎曲而形成周緣側氣體導入道405。該周緣側氣體導入道405係朝向板狀體40左右的中央部，而會與連接流道404的伸長方向正交般地伸長，該周緣側氣體導入道405的上游端係連接於周緣部側氣體導入埠403。 4, 6 and 7, a gas diffusion channel 45 extending in an arc shape along the periphery of the shower plate 4 is formed inside the flange 400 at the front and rear of the shower plate 4. Inside the peripheral region around the central region of the shower plate 4 , peripheral gas supply channels 46 branching from the gas diffusion channels 45 and extending in the front-rear direction are formed in the gaps between the slots 42 . Each gas diffusion flow channel 45 is drawn from a position that bisects each gas diffusion flow channel 45 in the longitudinal direction, and is formed with a connecting flow channel 404 extending toward the peripheral edge side of the plate-shaped body 40 so as to extend in the front-rear direction. More specifically, as described above, although the gas diffusion channel 45 is arc-shaped, the connecting channel 404 is formed along the normal direction of the arc. Then, the upstream side of the connecting flow passage 404 is bent to form the peripheral side gas introduction passage 405 . The peripheral side gas introduction passage 405 is directed toward the left and right central portion of the plate-like body 40, and is elongated perpendicular to the extending direction of the connecting flow passage 404, and the upstream end of the peripheral side gas introduction passage 405 is connected to the peripheral portion side The gas introduction port 403 .

圖6中，箭頭所指向之虛線的框內係將連接流道404及氣體擴散流道45擴大來加以顯示。如該圖6所示，連接流道404的寬度d係形成為較周緣側氣體導入道405的流道寬度D要來得細(D>d)。例如周緣側氣體導入道 405的流道寬度D為4~10mm，連接流道404的流道寬度d為2~6mm。又，連接流道404的長度L為連接流道404之流道寬度d的2倍以上長度(L≧2d)，連接流道404的長度L係形成為例如4~12mm。 In FIG. 6 , the connection flow channel 404 and the gas diffusion flow channel 45 are enlarged and shown in the frame of the dotted line pointed by the arrow. As shown in FIG. 6 , the width d of the connection flow passage 404 is formed to be thinner than the flow passage width D of the peripheral side gas introduction passage 405 (D>d). For example, the flow channel width D of the peripheral side gas introduction channel 405 is 4 to 10 mm, and the flow channel width d of the connecting flow channel 404 is 2 to 6 mm. In addition, the length L of the connecting runner 404 is equal to or more than twice the runner width d of the connecting runner 404 (L≧2d), and the length L of the connecting runner 404 is formed to be, for example, 4 to 12 mm.

周緣側氣體導入埠403係透過周緣側氣體供應管49而連接有Ar氣體供應源48。周緣側氣體供應管49係從上游側設置有流量調整部M5及閥體V5。又，如圖4、圖5及圖7所示，周緣側氣體供應道46係分散地形成有開口在噴淋板4的載置台3側一面之周緣側氣體噴出孔41B。該氣體擴散流道45、周緣側氣體供應道46、周緣側氣體導入埠403、連接流道404、周緣側氣體導入道405、周緣側氣體供應管49、Ar氣體供應源48、流量調整部M5、閥體V5及周緣側氣體噴出孔41B係相當於周緣側氣體供應部。圖4中，係以黑點來表示中央側氣體噴出孔41A，而以白點來表周緣側氣體噴出孔41B。 The peripheral side gas introduction port 403 is connected to the Ar gas supply source 48 through the peripheral side gas supply pipe 49 . The peripheral side gas supply pipe 49 is provided with the flow rate adjustment portion M5 and the valve body V5 from the upstream side. 4 , 5 and 7 , the peripheral side gas supply passages 46 are dispersedly formed with peripheral side gas ejection holes 41B opening on the surface of the shower plate 4 on the mounting table 3 side. The gas diffusion channel 45 , the peripheral gas supply channel 46 , the peripheral gas introduction port 403 , the connecting channel 404 , the peripheral gas introduction channel 405 , the peripheral gas supply pipe 49 , the Ar gas supply source 48 , and the flow rate adjustment part M5 , the valve body V5 and the peripheral side gas ejection hole 41B correspond to the peripheral side gas supply portion. In FIG. 4 , the center-side gas ejection holes 41A are indicated by black dots, and the peripheral-side gas ejection holes 41B are indicated by white dots.

離子捕集部51如圖8所示，例如係由上下配置之2片石英板51a、51b所構成。2片石英板51a、51b之間係沿著周緣部而設置有例如石英製的間隔件52，2片石英板51a、51b係透過間隙而對向般地加以配置。各石英板51a、51b如圖8、圖9所示，係形成有延伸於左右方向且分別貫穿於厚度方向之複數個槽縫53、54，從上方側來觀看各石英板51a、51b所形成的槽縫53、54時，係以其位置不會相互重疊之方式而形成為互有差異。此外，圖3~圖9中係概略地顯示槽縫42、53、54及中央側氣體噴出孔41A、周緣側氣體噴出孔41B，而未正確地記載槽縫及噴出孔的配置間隔或數量。 As shown in FIG. 8, the ion trap part 51 consists of two quartz plates 51a, 51b arrange|positioned up and down, for example. Between the two quartz plates 51a and 51b, a spacer 52 made of quartz, for example, is provided along the peripheral portion, and the two quartz plates 51a and 51b are arranged so as to face each other through a gap. As shown in FIGS. 8 and 9 , each of the quartz plates 51 a and 51 b is formed with a plurality of slits 53 and 54 extending in the left-right direction and penetrating the thickness direction, respectively. The quartz plates 51 a and 51 b are viewed from above. The slots 53 and 54 are formed to be different from each other in such a way that their positions do not overlap each other. 3 to 9 schematically show the slits 42, 53, 54, the center side gas ejection hole 41A, and the peripheral side gas ejection hole 41B, but the arrangement interval or number of the slits and the ejection holes is not accurately described.

此外，第1實施型態中，噴淋板4及形成於離子捕集板51之槽縫42、53、54係相當於第1氣體供應孔。 In addition, in the first embodiment, the shower plate 4 and the slits 42, 53, and 54 formed in the ion trap plate 51 correspond to the first gas supply holes.

回到圖2，處理容器20的底面係開口出排氣口61，排氣口61係連接有排氣道62。該排氣道62係構成為會透過例如擺錘閥(Pendulum valve)所構成的壓力調整閥等而連接有真空幫浦等真空排氣部6，可將處理容器20內減壓至特定的真空壓力。 Returning to FIG. 2 , the bottom surface of the processing container 20 is opened with an exhaust port 61 , and an exhaust port 62 is connected to the exhaust port 61 . The exhaust passage 62 is configured to be connected to a vacuum exhaust unit 6 such as a vacuum pump through a pressure regulating valve such as a pendulum valve, so that the inside of the processing chamber 20 can be decompressed to a specific vacuum. pressure.

又，如圖1所示，真空處理裝置係具有控制部9，該控制部9係具有程式、記憶體、CPU。該等程式係被收納在電腦記憶媒體(例如光碟、硬碟、磁光碟等)且被安裝在控制部9。程式係包含有步驟群來實施包含有晶圓W 的搬送或電漿處理裝置2中之各氣體的供給或停止之處理的一連串動作。 Moreover, as shown in FIG. 1, the vacuum processing apparatus has the control part 9, and this control part 9 has a program, a memory, and a CPU. These programs are stored in a computer storage medium (eg, an optical disk, a hard disk, a magneto-optical disk, etc.) and installed in the control unit 9 . The program includes a group of steps to implement a series of operations including the transfer of the wafer W or the supply or stop of each gas in the plasma processing apparatus 2 .

針對上述實施型態的作用來加以說明。例如，將收納有晶圓W之搬送容器C搬入至真空處理裝置的載置埠11後，從搬送容器C來取出晶圓W，並透過常壓搬送室12及加載互鎖室13來搬送至真空搬送室10。接著，藉由搬送機構16來將晶圓W搬送至成膜裝置，而成膜出SiN膜。之後藉由搬送機構16來將晶圓W從成膜裝置取出，並搬送至電漿處理裝置2。電漿處理裝置2中，係藉由例如各載置台3的升降銷與搬送機構16之協動作用來傳遞晶圓W，並載置於各載置台3。搬入有作為蝕刻對象的晶圓W後，使搬送裝置退開至真空搬送室並關閉閘閥21，且使區劃壁24上升來區隔為各處理容器20。 The effect of the above-mentioned embodiment will be described. For example, after the transfer container C containing the wafers W is carried into the loading port 11 of the vacuum processing apparatus, the wafers W are taken out from the transfer container C and transferred to the normal pressure transfer chamber 12 and the load-lock chamber 13 . Vacuum transfer chamber 10 . Next, the wafer W is transferred to the film forming apparatus by the transfer mechanism 16 to form a SiN film. After that, the wafer W is taken out from the film forming apparatus by the transfer mechanism 16 and transferred to the plasma processing apparatus 2 . In the plasma processing apparatus 2 , the wafers W are transferred and mounted on the respective mounting tables 3 by, for example, the cooperation between the lift pins of the respective mounting tables 3 and the transfer mechanism 16 . After the wafer W to be etched is carried in, the transfer device is withdrawn to the vacuum transfer chamber, the gate valve 21 is closed, and the partition wall 24 is raised to separate the processing containers 20 .

接著，將各處理容器20內的壓力設定為例如13.3~133.3Pa，且分別以10~500sccm的流量來供應NF3氣體，以10~1000sccm的流量來供應O2氣體，且以5~130sccm的流量來供應H2氣體。又，係以50~1000sccm的流量來從中央側氣體噴出孔41A供應Ar氣體，且以50~1000sccm的流量來從周緣側氣體噴出孔41B供應氣體。藉此，則處理容器20中的電漿空間P中，離子捕集部51與介電窗26之間便會混合且充滿有NF3氣體、O2氣體及H2氣體。 Next, the pressure in each processing vessel 20 is set to, for example, 13.3 to 133.3 Pa, and NF 3 gas is supplied at a flow rate of 10 to 500 sccm, O 2 gas is supplied at a flow rate of 10 to 1000 sccm, and 5 to 130 sccm is supplied. flow to supply H2 gas. In addition, the Ar gas is supplied from the center side gas ejection hole 41A at a flow rate of 50 to 1000 sccm, and the gas is supplied from the peripheral side gas ejection hole 41B at a flow rate of 50 to 1000 sccm. Accordingly, in the plasma space P in the processing container 20 , the ion trap 51 and the dielectric window 26 are mixed and filled with NF 3 gas, O 2 gas and H 2 gas.

之後，從高頻電源29來對高頻天線27施加200~1200W的高頻電功率，則電漿空間P便會產生感應電場來將NF3氣體、O2氣體及H2氣體激發。藉此，如圖10所示，電漿空間P雖會生成NF3氣體、O2氣體及H2氣體的電漿100，但由於感應電場係形成為甜甜圈狀，故電漿空間P所生成之電漿100的密度分佈便會甜甜圈狀地成為電漿濃度變高之分佈。 After that, the high-frequency electric power of 200-1200 W is applied to the high-frequency antenna 27 from the high-frequency power source 29, and the plasma space P will generate an induced electric field to excite the NF 3 gas, the O 2 gas and the H 2 gas. Thereby, as shown in FIG. 10 , although the plasma 100 of NF 3 gas, O 2 gas and H 2 gas is generated in the plasma space P, since the induced electric field is formed in the shape of a doughnut, the plasma space P has a shape of a doughnut. The density distribution of the generated plasma 100 becomes a doughnut-like distribution in which the plasma concentration becomes high.

接著，電漿100雖會通過離子捕集部51的槽縫53、54，但由於電漿100中的離子會異向性地移動，故無法通過離子捕集部51的2個槽縫53、54而被捕捉。又，由於電漿中的自由基會等向性地移動，故會通過離子捕集部51而往噴淋板4側通過。於是，便會因電漿化後的NF3氣體、O2氣體及H2氣體通過離子捕集部51，而導致例如F、NF2、O及H等自由基的濃度變高。 Next, although the plasma 100 passes through the slots 53 and 54 of the ion trap 51 , since the ions in the plasma 100 move anisotropically, they cannot pass through the two slots 53 and 54 of the ion trap 51 . 54 and was captured. Moreover, since the radicals in the plasma move isotropically, they pass through the ion trap 51 to the shower plate 4 side. Then, the concentration of radicals such as F, NF 2 , O, and H increases due to the plasmaized NF 3 gas, O 2 gas, and H 2 gas passing through the ion trap 51 .

然後，通過離子捕集部51之F、NF2、O及H等自由基會通過噴淋板4 的槽縫42而進入至處理空間S。電漿100會有在電漿空間P成為甜甜圈狀的濃度分佈之傾向。然後，自由基會因通過離子捕集部51及噴淋板4而某種程度地被整流，且密度均勻化而侵入至處理空間S內並被供應至晶圓W。然而，自由基的密度分佈要藉由通過離子捕集部51及噴淋板4來完全地均勻化非常困難，另外，會因處理空間S中之排氣而受到影響。 Then, radicals such as F, NF 2 , O, and H that have passed through the ion trap 51 enter the processing space S through the slits 42 of the shower plate 4 . The plasma 100 tends to have a doughnut-like concentration distribution in the plasma space P. As shown in FIG. Then, the radicals are rectified to some extent by passing through the ion trap 51 and the shower plate 4 , and the density is uniformized, intruding into the processing space S, and being supplied to the wafer W. However, it is very difficult to completely homogenize the density distribution of radicals by passing through the ion trap 51 and the shower plate 4 , and is also affected by the exhaust gas in the processing space S.

然後，調整從中央側氣體供應孔41A所供應之Ar氣體的流量與從周緣側氣體噴出孔41B所供應之Ar氣體的流量，來使供應至處理空間S中的中央側區域與周緣側區域中，希望將蝕刻量抑制為較低之側的區域之Ar氣體流量相對地較多。例如，欲在處理空間S中的周緣側區域將蝕刻量抑制為較低之情況，則使Ar氣體流量在晶圓W的周緣區域側較多，而在晶圓W的中央區域側較少。藉此，由於處理空間S中，F、NF2、O及H等自由基因Ar氣體而被稀釋的比率在晶圓W的周緣區域側區域處會較中央區域側要變高，故晶圓W的中心側處之自由基的濃度便會相對地上升。藉此，如圖11所示，晶圓W的中心側處之自由基的濃度與晶圓W的周緣側處之自由基的濃度便能一致。於是，處理空間S中的自由基101便會變得均勻，且晶圓W之蝕刻的面內均勻性會變得良好。由於係藉由從中央側氣體噴出孔41A及周緣側氣體噴出孔41B所噴出之Ar氣體，來調整將從第1氣體供應部所供應之氣體激發後的F、NF2、O及H等自由基在處理空間S內的分佈，故第2氣體(Ar氣體)便可說是能夠調整第1氣體的分佈之分佈調整用氣體。 Then, the flow rate of the Ar gas supplied from the center-side gas supply hole 41A and the flow rate of the Ar gas supplied from the peripheral-side gas ejection holes 41B are adjusted so as to be supplied to the center-side region and the peripheral-side region in the processing space S , it is desirable that the flow rate of the Ar gas is relatively high in the region on the side where the etching amount is suppressed to be low. For example, in order to suppress the etching amount to be low in the peripheral region of the processing space S, the Ar gas flow rate is increased in the peripheral region of the wafer W and small in the central region of the wafer W. Thereby, in the processing space S, the dilution ratio of the free gene Ar gas such as F, NF 2 , O, and H becomes higher in the peripheral region side of the wafer W than in the central region side, so that the wafer W The concentration of free radicals at the center side of , increases relatively. Thereby, as shown in FIG. 11 , the concentration of radicals on the central side of the wafer W and the concentration of radicals on the peripheral side of the wafer W can be matched. Thus, the radicals 101 in the processing space S become uniform, and the in-plane uniformity of the etching of the wafer W becomes good. Since the Ar gas ejected from the center side gas ejection hole 41A and the peripheral side gas ejection hole 41B is used to adjust the freedom of F, NF 2 , O, H, etc. after being excited by the gas supplied from the first gas supply unit Based on the distribution in the processing space S, the second gas (Ar gas) can be said to be a distribution adjustment gas that can adjust the distribution of the first gas.

處理空間S中，SiN膜會因F、NF2、O及H等自由基而被蝕刻。之後，藉由搬送機構16來將晶圓W搬送至PHT裝置，並進行加熱處理。藉此，因蝕刻處理而產生的殘渣便會昇華而被去除。接著，將晶圓W搬送至真空氛圍的加載互鎖室13，再將加載互鎖室13切換為大氣氛圍後，藉由搬送機構15來將晶圓W取出，並在冷卻裝置14調整晶圓W的溫度後，再返回例如原來的搬送容器C。 In the processing space S, the SiN film is etched by radicals such as F, NF 2 , O, and H. After that, the wafer W is transferred to the PHT apparatus by the transfer mechanism 16, and heat treatment is performed. Thereby, the residue generated by the etching process is sublimated and removed. Next, the wafer W is transferred to the load-lock chamber 13 in the vacuum atmosphere, and after the load-lock chamber 13 is switched to the atmospheric atmosphere, the wafer W is taken out by the transfer mechanism 15 , and the wafer is conditioned in the cooling device 14 . After the temperature of W, it returns to the original conveyance container C, for example.

依據上述實施型態，係在對處理容器20內所載置之晶圓W供應氣體來進行處理之電漿處理裝置中，藉由分隔部5來將處理容器20內區劃為會激發NF3氣體、O2氣體及H2氣體之電漿空間P，以及對晶圓W進行自由 基處理之處理空間S。然後，係構成為透過離子捕集部51所形成之槽縫53、54以及噴淋板4所形成之槽縫42來將電漿空間P中激發的NF3氣體、O2氣體及H2氣體作為自由基而供應至處理空間S，並從噴淋板4的下面來獨立於NF3氣體、O2氣體及H2氣體而供應Ar氣體。另外，在供應Ar氣體時，係設置有會從載置台3的中央區域側來供應Ar氣體之中央側氣體供應部，以及從載置台3的周緣區域側來供應Ar氣體之周緣側氣體供應部。於是，由於可在載置台3的中心側與載置台3的周緣側獨立地調整Ar氣體的供應量，從而可調整被供應至晶圓W之自由基的面內分佈，因此便可調整晶圓W之電漿處理的面內分佈。 According to the above-mentioned embodiment, in the plasma processing apparatus for processing the wafer W placed in the processing vessel 20 by supplying gas, the inside of the processing vessel 20 is partitioned by the partition 5 so as to excite the NF 3 gas. , a plasma space P for O 2 gas and H 2 gas, and a processing space S for performing radical processing on the wafer W. Then, the NF 3 gas, O 2 gas and H 2 gas excited in the plasma space P are configured to pass through the slits 53 and 54 formed by the ion trap 51 and the slit 42 formed by the shower plate 4 . It is supplied to the processing space S as radicals, and the Ar gas is supplied from the lower surface of the shower plate 4 independently of the NF 3 gas, the O 2 gas, and the H 2 gas. In addition, when supplying the Ar gas, a center-side gas supply part for supplying the Ar gas from the center region side of the mounting table 3 and a peripheral-side gas supply part for supplying the Ar gas from the peripheral region side of the mounting table 3 are provided. . Therefore, since the supply amount of the Ar gas can be adjusted independently on the center side of the mounting table 3 and the peripheral side of the mounting table 3, the in-plane distribution of the radicals supplied to the wafer W can be adjusted, and thus the wafer can be adjusted. In-plane distribution of W for plasma treatment.

又，NF3氣體、O2氣體及H2氣體的自由基濃度會依例如處理容器20內之NF3氣體、O2氣體及H2氣體的供應位置等，而有在處理空間S中的中央區域側處變高之情況。若欲將上述般之晶圓W中心側的蝕刻量抑制為較低之情況，則係將從中央側氣體供應部所供應之Ar氣體量調整為相對地較多，藉此便可相對於晶圓W周緣側的蝕刻量，而將晶圓W中心側的蝕刻量抑制為相對較低。 In addition, the radical concentrations of the NF 3 gas, the O 2 gas and the H 2 gas are at the center of the processing space S depending on, for example, the supply positions of the NF 3 gas, the O 2 gas, and the H 2 gas in the processing container 20 . The case where the area side becomes higher. In order to suppress the etching amount on the center side of the wafer W as described above to be low, the amount of Ar gas supplied from the center side gas supply unit is adjusted to be relatively large, so that the The etching amount on the peripheral side of the circle W is suppressed to be relatively low on the central side of the wafer W.

再者，由於可以板狀體40來構成噴淋板4，故厚度會變薄，縱使和離子捕集部51加以組合來使用的情況，仍可避免裝置的大型化。 Furthermore, since the shower plate 4 can be constituted by the plate-shaped body 40, the thickness is reduced, and even if it is used in combination with the ion trapping part 51, the enlargement of the apparatus can be avoided.

另外，亦可為會將例如NF3氣體等會使其電漿化的處理氣體供應至電漿空間P側，而從噴淋板4的下面不使NH3氣體等電漿化來供應至晶圓W之電漿處理裝置。作為上述般的範例，舉例有例如藉由COR(Chemical Oxide Removal)法來去除SiO2膜之電漿處理裝置。在此電漿處理裝置中，會生成作為蝕刻劑之NH4F並使其吸附在晶圓W表面，來使NH4F與SiO2反應而生成AFS(氟矽酸銨)，但若將NH3氣體電漿化便不會生成NH4F。於是，便對電漿空間P供應NF3氣體來電漿化，且不使NH3氣體通過電漿空間P，而是從噴淋板4的下面來供應。由於上述般的範例中，亦係藉由調整從中央側氣體噴出孔41A所供應之NH3氣體的供應量與從周緣側氣體噴出孔41B所供應之之NH3氣體的供應量來調整NH3氣體的面內分佈，從而便可調整晶圓W表面處之NH4F供應量的面內分佈，故可獲得相同的效果。 Alternatively, a process gas such as NF 3 gas that can be plasmatized may be supplied to the plasma space P side, and NH 3 gas or the like may be supplied to the crystal from below the shower plate 4 without being plasmatized. Circle W plasma processing device. As an example of the above, for example, there is a plasma processing apparatus that removes the SiO 2 film by the COR (Chemical Oxide Removal) method. In this plasma processing apparatus, NH 4 F as an etchant is generated and adsorbed on the surface of wafer W, so that NH 4 F and SiO 2 are reacted to generate AFS (ammonium fluorosilicate). 3 Gas plasmaization will not generate NH 4 F. Then, the NF 3 gas is supplied to the plasma space P for plasmaization, and the NH 3 gas is not passed through the plasma space P, but is supplied from below the shower plate 4 . In the above-mentioned example, the NH 3 gas is also adjusted by adjusting the supply amount of the NH 3 gas supplied from the center side gas ejection holes 41A and the supply amount of the NH 3 gas supplied from the peripheral side gas ejection holes 41B. The in-plane distribution of the gas makes it possible to adjust the in-plane distribution of the NH 4 F supply at the surface of the wafer W, so that the same effect can be obtained.

又，若電漿衝撞到離子捕集部51，便會有熱蓄積在離子捕集部51之情 況。通過離子捕集部51之自由基等會因熱分佈而有其分佈發生偏倚的情況，便會有處理空間S之自由基的分佈因離子捕集部51的熱分佈而受到影響之情況。上述實施型態中，係以鋁板來構成噴淋板4。藉由於離子捕集部51的下方設置有鋁板等隔熱組件，便可阻隔離子捕集部51的熱朝處理空間S輻射。於是，便可抑制處理空間S的自由基分佈因離子捕集部51的熱影響而發生偏倚，從而便可精確度良好地來調整處理空間S之自由基的濃度分佈。 Further, when the plasma collides with the ion trap portion 51, heat may be accumulated in the ion trap portion 51. The distribution of radicals and the like passing through the ion trap 51 may be biased due to thermal distribution, and the distribution of radicals in the processing space S may be affected by the thermal distribution of the ion trap 51 . In the above-mentioned embodiment, the shower plate 4 is constituted by an aluminum plate. The heat of the spacer collection part 51 can be prevented from being radiated to the processing space S by disposing a heat insulating member such as an aluminum plate below the ion collection part 51 . Therefore, the deviation of the radical distribution in the processing space S due to the thermal influence of the ion trap 51 can be suppressed, and the concentration distribution of the radicals in the processing space S can be adjusted with high accuracy.

再者，藉由以隔熱組件來構成設置有凸緣400之噴淋板4，且使凸緣400接觸於處理容器20般來加以設置，由於噴淋板4的熱會透過處理容器20而擴散，故會提高隔熱效果。再者，藉由於噴淋板4的內部設置有會供應第2氣體之中央側氣體供應道44及周緣側氣體供應道46，且使氣體流通於中央側氣體供應道44及周緣側氣體供應道46，由於可促進噴淋板4的熱擴散，故效果會變大。又，離子捕集部51的熱分佈亦會依電漿分佈而不同，且往處理空間S側輻射之熱的分佈亦會有所不同。於是，藉由構成為可分別獨立地將氣體供應至噴淋板4之中心側內部所設置之中央側氣體供應道44與周緣側內部所設置之周緣側氣體供應道46，由於可配合離子捕集部51的熱分佈來改變噴淋板4中使氣體流通的區域，故可更有效率地使噴淋板4的熱擴散。 Furthermore, by forming the shower plate 4 provided with the flange 400 with a heat insulating element, and installing the flange 400 in contact with the processing container 20 , the heat of the shower plate 4 passes through the processing container 20 and is dissipated. Diffusion, it will improve the thermal insulation effect. Furthermore, the center side gas supply channel 44 and the peripheral side gas supply channel 46 for supplying the second gas are provided inside the shower plate 4, and the gas is made to flow through the center side gas supply channel 44 and the peripheral side gas supply channel. 46. Since the heat diffusion of the shower plate 4 can be promoted, the effect will be increased. In addition, the heat distribution of the ion trap 51 also differs depending on the plasma distribution, and the distribution of heat radiated to the processing space S side also differs. Therefore, by being configured to be able to supply gas to the center-side gas supply channel 44 provided in the center-side interior of the shower plate 4 and the peripheral-side gas supply channel 46 provided in the peripheral-side interior, respectively, the ion trap can be combined with the ion trap. The heat distribution of the collecting portion 51 changes the area in which the gas flows in the shower plate 4, so that the heat of the shower plate 4 can be diffused more efficiently.

另一方面，如圖6的說明，由於周緣側氣體導入道405係連接於在長度方向上將氣體擴散流道45二等分之位置，因此便可在氣體擴散流道45的左右方向上高均勻性地使氣體流量分散。如此般地由於因氣體擴散流道45而被分散之氣體會流入至各周緣側氣體供應道46，故可從周緣側氣體供應道46的下游側所設置之各周緣側氣體噴出孔41來高均勻性地噴出氣體。 On the other hand, as illustrated in FIG. 6 , since the peripheral side gas introduction channel 405 is connected to a position that bisects the gas diffusion channel 45 in the longitudinal direction, the gas diffusion channel 45 can be high in the left-right direction of the gas diffusion channel 45 . Disperses the gas flow uniformly. In this way, since the gas dispersed by the gas diffusion channel 45 flows into each peripheral side gas supply passage 46 , the gas can be discharged from each peripheral side gas ejection hole 41 provided on the downstream side of the peripheral side gas supply passage 46 . The gas is ejected uniformly.

此處，在周緣側氣體導入道405中，氣體會朝向左右方向的其中之一流動。於是，相較於將該周緣側氣體導入道405的下游端直接連接於氣體擴散流道45之長度方向的中央部，亦即不透過前述連接流道404來將氣體導入至氣體擴散流道45之構成，由於會將氣體供應至該擴散流道45，且使氣體流通於氣體擴散流道45而整流於圓弧的法線方向後，再導入至氣體擴 散流道45之構成(已藉由圖6來做說明)會在氣體擴散流道45的左右方向上，可更高均勻性地使氣體擴散，故較佳。 Here, in the peripheral side gas introduction passage 405, the gas flows toward one of the left and right directions. Therefore, instead of directly connecting the downstream end of the peripheral side gas introduction channel 405 to the central portion in the longitudinal direction of the gas diffusion channel 45 , that is, the gas is introduced into the gas diffusion channel 45 without passing through the aforementioned connecting channel 404 . In the structure, the gas will be supplied to the diffusion channel 45, and the gas will flow through the gas diffusion channel 45 to be rectified in the normal direction of the arc, and then be introduced into the gas diffusion channel 45 (by 6) in the left-right direction of the gas diffusion channel 45, the gas can be diffused more uniformly, so it is preferable.

又，為了消除連接流道404中之氣體流動的偏倚來使該氣體的直進性良好，以提高氣體擴散流道45中之氣體分佈的均勻性，較佳宜使連接流道404的寬度d較周緣側氣體導入道405的寬度D要細。又，為了如此般地消除連接流道404中之氣體流動的偏倚，連接流道404較佳為其長度L相對於寬度d，而如前述般地為2倍以上(L≧2d)。 In addition, in order to eliminate the bias of the gas flow in the connecting flow channel 404 to improve the straightness of the gas and improve the uniformity of gas distribution in the gas diffusion flow channel 45, it is preferable to make the width d of the connecting flow channel 404 larger than The width D of the peripheral side gas introduction passage 405 is thin. Further, in order to eliminate the deviation of the gas flow in the connecting flow channel 404 in this way, the connecting flow channel 404 preferably has the length L relative to the width d twice or more as described above (L≧2d).

又，亦可為使周緣側氣體導入道405中的下游側端部相對於上游側而膨大之構造，來使流入至連接流道404之氣體暫時滯留在氣體導入道405的下游側端部後再流入至連接流道404。藉由如此般地加以構成，由於可使流速變緩之氣體流入至連接流道404，故連接流道404中之氣體的直進性會變得良好。 In addition, the downstream side end of the peripheral side gas introduction passage 405 may be enlarged with respect to the upstream side, so that the gas flowing into the connection flow passage 404 may be temporarily retained after the downstream side end of the gas introduction passage 405 It flows into the connecting channel 404 again. By configuring in this way, since the gas whose flow velocity is slowed can flow into the connecting flow channel 404, the straightness of the gas in the connecting flow channel 404 can be improved.

又，本發明亦可構成為可在複數種氣體間切換從構成第2氣體供應部之中央側氣體噴出口41A及周緣側氣體噴出口41B所供應之氣體。例如圖12所示，係構成為可分別獨立地朝構成第2氣體供應部之中心側氣體導入埠402及周緣側氣體導入埠403供應Ar氣體與氧化膜去除用氣體(即氟化氫(HF)氣體)。將可如此般地供應Ar氣體及HF氣體之裝置作為基板處理裝置1A。除了可朝各埠402、403供應Ar氣體及HF氣體以外，此基板處理裝置1A係構成為與電漿處理裝置2相同。此外，圖12中的符號480為HF氣體供應源。又，符號V7、V8為閥體，符號M7、M8為流量調整部。 Moreover, this invention may be comprised so that the gas supplied from the center side gas discharge port 41A and the peripheral side gas discharge port 41B which comprise a 2nd gas supply part can be switched between a plurality of types of gas. For example, as shown in FIG. 12 , it is configured such that Ar gas and oxide film removing gas (ie, hydrogen fluoride (HF) gas) can be supplied independently to the center side gas introduction port 402 and the peripheral side gas introduction port 403 constituting the second gas supply portion. ). An apparatus capable of supplying Ar gas and HF gas in this way is used as a substrate processing apparatus 1A. This substrate processing apparatus 1A has the same configuration as the plasma processing apparatus 2 except that Ar gas and HF gas can be supplied to the ports 402 and 403 . Further, reference numeral 480 in FIG. 12 is an HF gas supply source. In addition, reference numerals V7 and V8 denote valve bodies, and reference numerals M7 and M8 denote flow rate adjustment parts.

圖13係顯示在基板處理裝置1A中所處理之被處理基板，即晶圓W。該晶圓W係在形成具有例如3D NAND構造的元件之際被使用，且交互地分別層積有複數層矽氮化膜(SiN膜)200與矽氧化膜(SiO2膜)201，且貫穿該等膜般地形成有記憶孔202。在基板處理裝置1A的處理前，構成記憶孔202的側壁之SiN膜200的表面會薄薄地形成有自然氧化膜203。預先說明該基板處理裝置1A的處理概略，在上述自然氧化膜203的去除後會蝕刻構成記憶孔202的側壁之SiN膜200的表層。但在此蝕刻處理後，會有於SiN膜200的表面形成有氧化膜之情況。若如此般地形成有氧化膜，便會有無法在後工序中正常地進行將膜朝記憶孔202內埋入之虞。因此，該基板處理裝 置1A係在蝕刻後才去除氧化膜，來防止上述膜的正常埋入受到阻礙。 FIG. 13 shows the substrate to be processed, that is, the wafer W, which is processed in the substrate processing apparatus 1A. The wafer W is used to form devices having, for example, a 3D NAND structure, and a plurality of layers of silicon nitride films (SiN films) 200 and silicon oxide films (SiO 2 films) 201 are alternately laminated, and pass through These films are formed with memory holes 202 . Before processing by the substrate processing apparatus 1A, a natural oxide film 203 is thinly formed on the surface of the SiN film 200 constituting the side wall of the memory hole 202 . The outline of the processing of the substrate processing apparatus 1A will be described in advance. After the above-mentioned removal of the natural oxide film 203 , the surface layer of the SiN film 200 constituting the side wall of the memory hole 202 is etched. However, after this etching process, an oxide film may be formed on the surface of the SiN film 200 . If the oxide film is formed in this way, there is a possibility that the film cannot be buried in the memory hole 202 normally in the subsequent process. Therefore, the substrate processing apparatus 1A removes the oxide film after etching to prevent the normal embedding of the film from being hindered.

針對使用該基板處理裝置1A之基板處理一例來更加詳細地說明。首先，將圖13所示之晶圓W載置於基板處理裝置1A內後，便進行記憶孔202側面之自然氧化膜203的除去處理。此情況下，係在將處理容器2內真空排氣且關閉高頻電源29之狀態下，如圖14所示般地從噴淋板4所形成之中央側氣體噴出孔41A及周緣側氣體噴出孔41B來對處理空間S供應HF氣體。此外，圖14、15中，係以白色來表示打開的閥體，而以黑色來表示關閉的閥體。此時，被供應至會將氣體導入至各中央側氣體噴出孔41A之中央側氣體導入埠402的HF氣體流量，與被供應至會將氣體導入至周緣側氣體噴出孔41B之2個周緣側氣體導入埠403的HF氣體流量可為例如相同。藉由如上述般地被供應至處理空間S之HF氣體的作用，來去除形成於記憶孔202內面的自然氧化膜203。 An example of substrate processing using this substrate processing apparatus 1A will be described in more detail. First, after the wafer W shown in FIG. 13 is placed in the substrate processing apparatus 1A, the removal process of the natural oxide film 203 on the side surface of the memory hole 202 is performed. In this case, in a state where the inside of the processing chamber 2 is evacuated and the high-frequency power supply 29 is turned off, as shown in FIG. The hole 41B is used to supply the HF gas to the processing space S. In addition, in FIGS. 14 and 15 , the open valve body is shown in white, and the closed valve body is shown in black. At this time, the flow rate of the HF gas supplied to the center-side gas introduction port 402 for introducing the gas into each center-side gas ejection hole 41A, and the flow rate of the HF gas supplied to the two peripheral sides for introducing the gas into the peripheral-side gas ejection holes 41B The HF gas flow rate of the gas introduction port 403 can be, for example, the same. The natural oxide film 203 formed on the inner surface of the memory hole 202 is removed by the action of the HF gas supplied to the processing space S as described above.

接著，如圖15所示，從H2氣體供應源37來對電漿空間P供應用以將SiN膜204改質的改質氣體(即H2氣體)，並停止朝處理空間S供應HF氣體。進一步地，打開高頻電源29來激發電漿。藉此，便會在電漿空間P將H2氣體活性化，H自由基會被供應至晶圓W。SiN膜200中之SiN的鍵結會因此H自由基的作用而被切斷，來使SiN膜200容易被蝕刻(SiN膜200被改質)。 Next, as shown in FIG. 15 , a reforming gas (ie, H 2 gas) for reforming the SiN film 204 is supplied from the H 2 gas supply source 37 to the plasma space P, and the supply of the HF gas to the processing space S is stopped. . Further, the high frequency power supply 29 is turned on to excite the plasma. Thereby, the H 2 gas is activated in the plasma space P, and H radicals are supplied to the wafer W. The bonding of SiN in the SiN film 200 is cut by the action of the H radical, so that the SiN film 200 is easily etched (the SiN film 200 is modified).

之後，如圖10、11的說明，會進行SiN膜200的蝕刻處理來作為電漿處理裝置2的處理。藉此，形成各個記憶孔202的側壁之SiN膜200便會在晶圓W的面內高均勻性地被蝕刻。 After that, as described in FIGS. 10 and 11 , the etching process of the SiN film 200 is performed as the process of the plasma processing apparatus 2 . As a result, the SiN film 200 forming the sidewalls of each memory hole 202 is etched with high uniformity in the plane of the wafer W. As shown in FIG.

然後，以數nm的厚度來蝕刻露出在記憶孔202內的SiN膜200後，便結束蝕刻。該SiN膜200的蝕刻係為了使埋入在各記憶孔202之膜的埋入性良好而進行。又，在蝕刻結束時，構成記憶孔202的側壁之SiN膜200的表面會因例如蝕刻中所使用之O2氣體的作用而如圖16所示般地形成有氧化膜204。 Then, after etching the SiN film 200 exposed in the memory hole 202 with a thickness of several nm, the etching is terminated. The etching of the SiN film 200 is performed in order to improve the embedding property of the film embedded in each memory hole 202 . When the etching is completed, an oxide film 204 is formed on the surface of the SiN film 200 constituting the side wall of the memory hole 202 due to, for example, the action of O 2 gas used in the etching, as shown in FIG. 16 .

於是，作為後處理，係與自然氧化膜203的除去處理工序同樣地如圖14所示，在停止朝電漿空間P供應各氣體且關閉高頻電源29之狀態下，從噴淋板4的氣體噴出孔41A、41B來供應HF氣體。藉此，便可去除SiN膜 200的表面所成膜之氧化膜204。 Then, as a post-processing, as shown in FIG. 14 , the supply of each gas to the plasma space P is stopped and the high-frequency power supply 29 is turned off, as shown in FIG. 14 . The gas ejection holes 41A and 41B supply HF gas. Thereby, the oxide film 204 formed on the surface of the SiN film 200 can be removed.

在氧化膜204的去除後，例如係如前述實施型態所說明般，進行晶圓W的加熱處理來去除附著在晶圓W的殘渣。此外，晶圓W的加熱處理可如前述般地搬送至PHT裝置來進行，或亦可在基板處理裝置1A的載置台3設置有加熱部而以基板處理裝置1A來進行。 After the removal of the oxide film 204 , for example, as described in the foregoing embodiment, the wafer W is subjected to a heat treatment to remove residues adhering to the wafer W. In addition, the heat treatment of the wafer W may be performed by being transferred to the PHT apparatus as described above, or may be performed by the substrate processing apparatus 1A by providing a heating portion on the mounting table 3 of the substrate processing apparatus 1A.

依據此基板處理裝置1A，便可以高均勻性來蝕刻晶圓W面內的SiN膜200。又，由於係在蝕刻後才去除SiN膜200表面的氧化膜204，故可防止阻礙到將膜朝記憶孔202埋入。 According to this substrate processing apparatus 1A, the SiN film 200 in the surface of the wafer W can be etched with high uniformity. In addition, since the oxide film 204 on the surface of the SiN film 200 is removed after etching, it is possible to prevent the film from being hindered from being buried in the memory hole 202 .

再者，依據此基板處理裝置1A，便可在相同的處理容器20內來進行自然氧化膜203的除去處理、切斷SiN的鍵結來使蝕刻變得容易之前處理、以及蝕刻處理後之氧化膜204的除去處理之一連串的基板處理。於是，當進行上述一連串的基板處理時，由於不需在複數處理容器20間進行晶圓W的搬送，故可謀求產能的提升。此外，亦可以基板處理裝置1A來僅進行自然氧化膜203的除去處理及蝕刻，或是以基板處理裝置1A來僅進行蝕刻處理及氧化膜204的除去處理。 Furthermore, according to the substrate processing apparatus 1A, the removal process of the natural oxide film 203 , the process of cutting SiN bonds to facilitate etching, and the oxidation process after the etching process can be performed in the same process chamber 20 . The removal process of the film 204 is one of a series of substrate processes. Therefore, when the above-mentioned series of substrate processing is performed, it is not necessary to transfer the wafers W between the plurality of processing containers 20, so that the productivity can be improved. In addition, only the removal process and etching of the natural oxide film 203 may be performed by the substrate processing apparatus 1A, or only the etching process and the removal process of the oxide film 204 may be performed by the substrate processing apparatus 1A.

又，蝕刻處理之前處理的自然氧化膜203除去處理，或蝕刻處理之後處理的氧化膜204除去處理亦可構成為會連同HF氣體一起供應NH3氣體。再者，氣體供應口34及用以將氣體供應至氣體供應口34之氣體供應管35、各閥體V1~V3、流量調整部M1~M3及各氣體供應源36~38係構成第1氣體供應部，而中央側氣體噴出口41A及周緣側氣體噴出口41B，以及用以將氣體供應至該等中央側氣體噴出口41A及周緣側氣體噴出口41B之各閥體V4、V5、流量調整部M4、M5及Ar氣體供應源48係構成第2氣體供應部，HF氣體及NH3氣體亦可從第1氣體供應部及第2氣體供應部的任一者來供應。又，改質氣體亦可為NH3或H2O。 In addition, the natural oxide film 203 removal process performed before the etching process or the oxide film 204 removal process performed after the etching process may be configured such that NH 3 gas is supplied together with the HF gas. Furthermore, the gas supply port 34 and the gas supply pipe 35 for supplying the gas to the gas supply port 34 , the valve bodies V1 to V3 , the flow rate adjustment parts M1 to M3 , and the gas supply sources 36 to 38 constitute the first gas. The supply part, the center side gas outlet 41A and the peripheral side gas outlet 41B, and the respective valve bodies V4 and V5 for supplying gas to the center side gas outlet 41A and the peripheral side gas outlet 41B, and flow rate adjustment The parts M4, M5 and the Ar gas supply source 48 constitute the second gas supply part, and the HF gas and the NH 3 gas may be supplied from either the first gas supply part or the second gas supply part. In addition, the reforming gas may be NH 3 or H 2 O.

[第2實施型態] [the second embodiment]

針對第2實施型態相關之基板處理裝置來加以說明。此基板處理裝置除了構成分隔部5的一部分之噴淋板8的構成與圖2所示之電漿處理裝置2不同以外，其他皆為相同的構成。有關第2實施型態相關之基板處理裝置的噴淋板8，參閱圖17~圖20來加以說明。此外，為了避免記載變得繁雜， 便將貫穿噴淋板8之槽縫42以黑線來表示。圖17、圖18係分別顯示從上面側及下面側來觀看噴淋板8之平面圖。又，圖19、圖20係分別為圖17、圖18中所示之I線及II線之噴淋板8的縱剖視圖。 The substrate processing apparatus related to the second embodiment will be described. This substrate processing apparatus has the same structure as the plasma processing apparatus 2 shown in FIG. 2 except that the structure of the shower plate 8 constituting a part of the partition portion 5 is different from that of the plasma processing apparatus 2 shown in FIG. 2 . The shower plate 8 of the substrate processing apparatus according to the second embodiment will be described with reference to FIGS. 17 to 20 . In addition, in order to avoid the complicated description, the slot 42 penetrating the shower plate 8 is represented by a black line. 17 and 18 are plan views showing the shower plate 8 viewed from the upper side and the lower side, respectively. 19 and FIG. 20 are longitudinal cross-sectional views of the shower plate 8 taken along the lines I and II shown in FIGS. 17 and 18, respectively.

如圖17、圖19及圖20所示，在噴淋板8的上面側(電漿空間P側)處，噴淋板8的前方及後方處之凸緣400的內部係形成有會使從各個噴淋板8的下面周緣側噴出的Ar氣體往左右方向擴散之周緣側氣體擴散流道91。又，如圖18、圖19及圖20所示，在噴淋板8的下面側處，噴淋板8的前方及後方處之凸緣400的內部係形成有會使從各個噴淋板8的下面中心部側噴出的Ar氣體往左右方向擴散之中央側氣體擴散流道92。又，噴淋板8的內部係於左右方向並排地形成有氣體流道93，該氣體流道93係從前方側至後方側貫穿噴淋板8，且係以各端部會位在較凸緣400內之中央側氣體擴散流道92所形成的高度位置要上方，且為周緣側氣體擴散流道91的下方之方式來加以形成。此外，圖17、18中，雖係顯示周緣側氣體擴散流道91的頂面及中央側氣體擴散流道92的下面為開放狀態，但如圖19、20所示，周緣側氣體擴散流道91的頂面及中央側氣體擴散流道92的下面皆係藉由板狀組件而被封閉。 As shown in FIGS. 17 , 19 and 20 , on the upper surface side (the plasma space P side) of the shower plate 8 , the flanges 400 at the front and the rear of the shower plate 8 are formed with insides so that the The peripheral side gas diffusion channel 91 in which the Ar gas ejected from the peripheral edge side of the lower surface of each shower plate 8 diffuses in the left-right direction. 18 , 19 and 20 , on the lower surface side of the shower plate 8 , the flanges 400 at the front and the rear of the shower plate 8 are formed with flanges 400 that allow the shower plate 8 to pass from each shower plate 8 . The center-side gas diffusion channel 92 in which the Ar gas ejected from the center portion side of the lower surface diffuses in the left-right direction. In addition, the inside of the shower plate 8 is formed with gas flow passages 93 side by side in the left-right direction. The gas flow passages 93 penetrate the shower plate 8 from the front side to the rear side, and each end portion is located in a relatively convex position. The height of the center-side gas diffusion channel 92 in the edge 400 is formed so as to be above and below the peripheral-side gas diffusion channel 91 . In addition, in FIGS. 17 and 18 , although the top surface of the peripheral gas diffusion channel 91 and the lower surface of the central gas diffusion channel 92 are shown in an open state, as shown in FIGS. 19 and 20 , the peripheral gas diffusion channel The top surface of 91 and the lower surface of the center-side gas diffusion channel 92 are closed by plate-shaped components.

左右並排之氣體流道93中靠內的流道(將中央區域橫剖之氣體流道93)中，係交互地配列有於其前後端部的上面側設有連通道96且連接於周緣側氣體擴散流道91之氣體流道93a，以及，於其前後端部的下面側設有連通道97且連接於中央側氣體擴散流道92之氣體流道93b。又，氣體流道93中靠外的流道(未將中央區域橫剖之氣體流道93)皆僅會成為於其前後端部的上面側設有連通道96且連接於周緣側氣體擴散流道91之氣體流道93a。 Among the gas flow passages 93 arranged side by side, the inner flow passages (the gas flow passages 93 in which the central region is cross-sectioned) are alternately arranged with connecting passages 96 provided on the upper surface side of the front and rear end portions thereof and connected to the peripheral side. The gas flow channel 93a of the gas diffusion flow channel 91 and the gas flow channel 93b connected to the center side gas diffusion flow channel 92 are provided with a connecting channel 97 on the lower surface side of the front and rear ends thereof. In addition, the outer flow channels of the gas flow channels 93 (the gas flow channels 93 with the central region not cross-sectioned) are only provided with connecting channels 96 on the upper surfaces of the front and rear end portions thereof and connected to the peripheral gas diffusion flow The gas flow channel 93a of the channel 91 is provided.

再者，如圖18、圖19所示，連接於周緣側氣體擴散流道91之氣體流道93a係於噴淋板8下面的周緣側區域形成有噴出孔95。又，如圖18、圖20所示，連接於中央側氣體擴散流道92之氣體流道93b係於噴淋板8下面的中央區域形成有複數噴出孔94。 Furthermore, as shown in FIGS. 18 and 19 , the gas flow passages 93 a connected to the peripheral side gas diffusion passages 91 are formed with ejection holes 95 in the peripheral side region of the lower surface of the shower plate 8 . Furthermore, as shown in FIGS. 18 and 20 , a plurality of ejection holes 94 are formed in the central region of the lower surface of the shower plate 8 in the gas flow channel 93 b connected to the center-side gas diffusion flow channel 92 .

然後，各周緣側氣體擴散流道91係與圖6所示之噴淋板4中的周緣側氣體擴散流道45同樣地透過連接流道404及周緣側氣體導入道405而連接於周緣側氣體供應埠403。再者，周緣側氣體供應埠403係連接有例如圖6 所示之周緣側氣體供應管49，而構成為會將Ar氣體透過周緣側氣體擴散流道91來供應至氣體流道93a。又，各中央側氣體擴散流道92亦係透過連接流道406、中央側氣體導入道407而連接於中央側氣體導入埠402。連接流道406係與連接流道404同樣地設置為會與中央側氣體導入道407及中央側氣體擴散流道92呈正交，並且，連接流道406的流道寬度係較中央側氣體導入道407的流道寬度要窄，連接流道406的長度為連接流道406之流道寬度的2倍以上長度。 Then, each peripheral side gas diffusion channel 91 is connected to the peripheral side gas through the connecting channel 404 and the peripheral side gas introduction channel 405 similarly to the peripheral side gas diffusion channel 45 in the shower plate 4 shown in FIG. 6 . Supply port 403. Furthermore, the peripheral side gas supply port 403 is connected to, for example, a peripheral side gas supply pipe 49 shown in FIG. In addition, each center-side gas diffusion channel 92 is also connected to the center-side gas introduction port 402 via the connecting channel 406 and the center-side gas introduction channel 407 . The connecting flow channel 406 is arranged to be perpendicular to the center-side gas introduction channel 407 and the center-side gas diffusion flow channel 92 in the same manner as the connecting flow channel 404 , and the flow channel width of the connecting flow channel 406 is larger than that of the center-side gas introduction channel 92 . The channel width of the channel 407 is narrow, and the length of the connecting channel 406 is more than twice the width of the channel connecting the channel 406 .

中央側氣體導入埠402係連接有例如圖6所示之中央側氣體供應管47，而構成為會將Ar氣體透過中央側氣體擴散流道92來供應至氣體流道93b。再者，噴淋板8中相鄰之氣體流道93(93a、93b)的間隙係形成有用以將電漿空間P側所激發的第1氣體(例如自由基)供應至處理空間S側之槽縫42。 The center-side gas introduction port 402 is connected to, for example, a center-side gas supply pipe 47 shown in FIG. 6 , and is configured to supply Ar gas to the gas flow channel 93b through the center-side gas diffusion channel 92 . Furthermore, the gaps between the adjacent gas flow channels 93 (93a, 93b) in the shower plate 8 are formed to supply the first gas (eg, radicals) excited by the plasma space P side to the processing space S side. Slot 42.

此般的噴淋板8中，與第1實施型態所示之噴淋板4同樣地，從周緣側氣體供應管49所供應之氣體會藉由周緣側氣體擴散流道91而在氣體流道93a的配列方向上流量變得均勻般地擴散後，才會被供應至各氣體流道93a。再者，從中央側氣體供應管47所供應之氣體會藉由中央側氣體擴散流道92而在氣體流道93b的配列方向上流量變得均勻般地擴散後，才會被供應至各氣體流道93b。於是，不僅是被供應至噴淋板8的周緣區域之氣體，且被供應至中央區域之氣體的流量亦會在氣體流道93b的配列方向(左右方向)上變得均勻。 In such a shower plate 8 , like the shower plate 4 shown in the first embodiment, the gas supplied from the peripheral side gas supply pipe 49 passes through the peripheral side gas diffusion flow passages 91 and is dispersed in the gas flow. The gas flow channels 93a are supplied to each gas flow channel 93a after the flow rate is uniformly diffused in the arrangement direction of the channels 93a. Furthermore, the gas supplied from the center-side gas supply pipe 47 is supplied to each gas after the flow rate of the gas supplied from the center-side gas diffusion channel 92 becomes uniform in the arrangement direction of the gas channels 93b. runner 93b. Accordingly, not only the gas supplied to the peripheral region of the shower plate 8 but also the flow rate of the gas supplied to the central region becomes uniform in the arrangement direction (left-right direction) of the gas flow passages 93b.

於是，便可分別將從噴淋板8的中央區域側所供應之第2氣體，以及從周緣側所供應之第2氣體均勻地噴出。於是，便可分別使被供應至晶圓W的中心側及周緣側之第2氣體的面內分佈變得均勻，在調整被供應至晶圓W之第2氣體的面內均勻性時，可以更好的精確度來做調整。 Accordingly, the second gas supplied from the center region side of the shower plate 8 and the second gas supplied from the peripheral side can be uniformly ejected, respectively. Accordingly, the in-plane distribution of the second gas supplied to the center side and the peripheral side of the wafer W can be made uniform, respectively. When adjusting the in-plane uniformity of the second gas supplied to the wafer W, it is possible to Better precision to make adjustments.

[第3實施型態] [the third embodiment]

又，本發明亦可取代將氣體電漿化之電漿空間，而為具備有將氣體預混合的擴散空間之基板處理裝置。以下就將例如NF3氣體、Ar氣體、O2氣體、H2氣體等氣體預混合後才供應至處理空間，且直接將例如HF氣體或NH3氣體等後混合用的氣體供應至處理空間而進行處理之基板處理裝置來加以說明。對晶圓W進行氣體處理之氣體處理部雖亦可與前述電漿處理裝 置的處理容器20同樣為連結2個之構成，但此處係針對具備有1個處理容器210之範例來加以說明。如圖21所示，具有圓筒形的處理容器210，且於處理容器210的頂板部分設置有噴淋頭7所構成。此外，圖中的符號21、22分別為閘閥及搬送口，符號61、62及6分別為與電漿處理裝置2同樣地構成之排氣口、排氣管及真空排氣部。再者，處理容器內係與電漿處理裝置2同樣地設置有載置台3。 Moreover, the present invention may be a substrate processing apparatus provided with a diffusion space for premixing gas, instead of the plasma space for plasmaizing the gas. In the following, gases such as NF 3 gas, Ar gas, O 2 gas, and H 2 gas are pre-mixed before being supplied to the processing space, and the post-mixing gas such as HF gas or NH 3 gas is directly supplied to the processing space. A substrate processing apparatus for processing will be described. Although the gas processing section for gas processing the wafer W may be configured by connecting two processing containers 20 in the same manner as the above-mentioned plasma processing apparatus, an example of including one processing container 210 will be described here. As shown in FIG. 21, it has a cylindrical processing container 210, and the shower head 7 is provided in the ceiling part of the processing container 210, and is comprised. In addition, reference numerals 21 and 22 in the figure denote a gate valve and a transfer port, respectively, and reference numerals 61, 62, and 6 denote an exhaust port, an exhaust pipe, and a vacuum exhaust portion, which are configured similarly to the plasma processing apparatus 2, respectively. In addition, similarly to the plasma processing apparatus 2, the mounting table 3 is installed in the processing container.

針對噴淋頭7的構成，參閱圖21~圖23來加以說明。噴淋頭7係具備有構成會讓第1氣體擴散的擴散空間D之擴散組件71，以及會將氣體噴出至處理空間S之噴淋組件72，如圖21所示，從載置台3側係依序重疊地形成有噴淋組件72與擴散組件71。擴散組件71的底板71a及噴淋組件72係相當於會區劃為進行晶圓W的處理之處理空間S，以及讓氣體擴散的擴散空間D之分隔部。此外，圖21~圖23係概略地顯示而未正確地記載噴出孔的配置或數量。 The configuration of the shower head 7 will be described with reference to FIGS. 21 to 23 . The shower head 7 includes a diffusion unit 71 constituting a diffusion space D for diffusing the first gas, and a shower unit 72 for ejecting the gas into the processing space S, as shown in FIG. The shower element 72 and the diffuser element 71 are formed to overlap in sequence. The bottom plate 71a of the diffusion unit 71 and the shower unit 72 correspond to a partition that is divided into a processing space S where wafers W are processed, and a diffusion space D where gas is diffused. 21 to 23 are schematically shown, and the arrangement and number of the ejection holes are not accurately described.

如圖21、圖22所示，擴散組件71係構成為內部形成有讓氣體擴散的擴散室之扁平圓筒形狀。擴散組件71的頂板係連接有會將例如NF3氣體、Ar氣體、O2氣體、H2氣體等第1氣體供應至擴散組件71內之第1氣體供應管73的下游側端部，擴散組件71的底板71a係以貫穿底板之方式而設置有會噴出在擴散組件71內擴散的氣體之孔部74。第1氣體供應管73的上游側係連接有會混合NF3氣體、Ar氣體、O2氣體、H2氣體等氣體來供應至第1氣體供應管73之第1氣體供應源85。此外，圖21中的符號V6、M6分別為閥體及流量調整部。此範例中，雖係構成為從一處來將第1氣體供應至擴散組件71內，但例如亦可從分別個別地設置之氣體導入部來將複數氣體導入至擴散空間D。然後，亦可使複數種氣體在擴散空間D混合。 As shown in FIG. 21 and FIG. 22 , the diffusion element 71 is configured in a flat cylindrical shape in which a diffusion chamber for diffusing gas is formed inside. The top plate of the diffusion element 71 is connected to the downstream end of the first gas supply pipe 73 that supplies the first gas such as NF 3 gas, Ar gas, O 2 gas, H 2 gas into the diffusion element 71. The diffusion element The bottom plate 71a of 71 is provided with a hole 74 through which the gas diffused in the diffuser element 71 is ejected. The upstream side of the first gas supply pipe 73 is connected to a first gas supply source 85 that mixes gases such as NF 3 gas, Ar gas, O 2 gas, and H 2 gas to supply the first gas supply pipe 73 . In addition, reference numerals V6 and M6 in FIG. 21 denote a valve body and a flow rate adjustment portion, respectively. In this example, the first gas is supplied into the diffusion element 71 from one place, but a plurality of gases may be introduced into the diffusion space D from, for example, individually provided gas introduction portions. Then, a plurality of gases may be mixed in the diffusion space D.

又，如圖21、圖22所示擴散組件71的內部係構成為從平面來觀看擴散組件71，在靠近中心之位置係設置有中央側氣體供應管75，且不使透過連接於擴散組件71的頂板之第2氣體供應管76所供應的例如HF氣體或NH3氣體等後混合用第2氣體往擴散室擴散，而是供應至後述噴淋組件72的中央側區域。又，擴散組件71內部靠周緣的位置處係設置有周緣側氣體供應管77，而構成為不使透過連接於頂板之第2氣體供應管78所供應的第 2氣體往擴散室擴散，而是供應至後述噴淋組件72的周緣側區域。 In addition, as shown in FIGS. 21 and 22 , the inside of the diffuser element 71 is configured such that the diffuser element 71 is viewed from a plane, and a center-side gas supply pipe 75 is provided at a position close to the center, and is not connected to the diffuser element 71 through penetration. The second gas for post-mixing such as HF gas or NH 3 gas supplied from the second gas supply pipe 76 of the top plate is diffused into the diffusion chamber and supplied to the center side region of the shower unit 72 described later. In addition, a peripheral side gas supply pipe 77 is provided in the diffuser element 71 at a position close to the peripheral edge, and the second gas supplied through the second gas supply pipe 78 connected to the top plate is not diffused into the diffusion chamber, but is It is supplied to the peripheral side area|region of the shower unit 72 mentioned later.

此外，圖中的符號86為HF氣體或NH3氣體等後混合用的第2氣體供應源，圖21中的符號V4、V5分別為第2氣體供應管76、78所設置之閥體，符號M4、M5分別為第2氣體供應管76、78所設置之流量調整部。 In addition, the reference numeral 86 in the figure is a second gas supply source for post-mixing of HF gas or NH 3 gas, and the reference numerals V4 and V5 in FIG. 21 are valve bodies provided in the second gas supply pipes 76 and 78, respectively. M4 and M5 are flow rate adjustment parts provided in the second gas supply pipes 76 and 78 , respectively.

如圖21、圖23所示，噴淋組件72係由扁平有底圓筒形狀的組件所構成，藉由擴散組件的底板71a來將上方封閉，則內部便會形成有噴淋室。噴淋室內係藉由區劃壁81而被區劃為中央區域與周緣側區域。然後，透過擴散組件71的中央側氣體供應管75而被供應至噴淋室之第2氣體係如圖21中以虛線的箭頭所示般地會流入至噴淋室內之區劃壁81所圍繞的中央區域，再從區劃壁81所圍繞之中央區域的底面所形成之中央側氣體噴出孔82流入至處理空間S，並朝向載置台3所載置之晶圓W被噴出。 As shown in FIGS. 21 and 23 , the spray assembly 72 is composed of a flat bottomed cylindrical assembly. The upper part is closed by the bottom plate 71a of the diffuser assembly, and a spray chamber is formed inside. The shower chamber is partitioned into a central area and a peripheral side area by the partition wall 81 . Then, the second gas system supplied to the shower chamber through the gas supply pipe 75 on the center side of the diffuser unit 71 flows into the area surrounded by the partition wall 81 in the shower chamber as indicated by the dashed arrow in FIG. 21 . The central area flows into the processing space S from the center-side gas ejection holes 82 formed in the bottom surface of the central area surrounded by the partition wall 81 , and is ejected toward the wafer W placed on the stage 3 .

又，透過擴散組件71的周緣側氣體供應管77而被供應至噴淋室之第2氣體係如圖21中鏈線的箭頭所示般地流入較噴淋室內之區劃壁81要靠外側的周緣區域，再且從較區劃壁81要靠外側之周緣區域的底面所形成之周緣側氣體噴出孔83來流入至處理空間S，並朝向載置台3所載置之晶圓W被噴出。 Furthermore, the second gas system supplied to the shower chamber through the peripheral side gas supply pipe 77 of the diffuser 71 flows into the outer side of the partition wall 81 in the shower chamber as indicated by the arrows of the chain lines in FIG. 21 . The peripheral region and the peripheral side gas ejection holes 83 formed on the bottom surface of the peripheral region on the outer side of the partition wall 81 flow into the processing space S, and are ejected toward the wafer W placed on the stage 3 .

又，噴淋室內係分別對應於擴散組件71的底板71a所形成之孔部74而設置有氣體供應管84，如圖21中以實線的箭頭所示，係構成為不使從擴散組件71的孔部74噴出之第1氣體往噴淋室內擴散，而是朝噴淋組件72的下方噴出。該孔部74及氣體供應管84係相當於第1氣體噴出孔。此般基板處理裝置中，亦可使第1氣體在擴散空間D擴散再噴出至處理空間S，並且不使第2氣體通過擴散室，而是從噴淋組件72內的中央區域及周緣區域分別獨立地供應至處理空間S。於是，便可調整處理容器20內之第2氣體的濃度分佈而能獲得相同的效果。 In addition, in the shower chamber, gas supply pipes 84 are provided corresponding to the holes 74 formed in the bottom plate 71a of the diffuser element 71, respectively, as shown by the solid arrows in FIG. The first gas ejected from the hole portion 74 of the first gas diffuses into the shower chamber, and is ejected toward the lower side of the shower assembly 72 . The hole portion 74 and the gas supply pipe 84 correspond to the first gas ejection hole. In such a substrate processing apparatus, the first gas may be diffused in the diffusion space D and then ejected to the processing space S, and the second gas may not pass through the diffusion chamber, but be separated from the central area and the peripheral area of the shower unit 72 . independently supplied to the processing space S. Accordingly, the concentration distribution of the second gas in the processing container 20 can be adjusted, and the same effect can be obtained.

4‧‧‧噴淋板 4‧‧‧Sprinkler

41A‧‧‧中央側氣體噴出孔 41A‧‧‧Center side gas ejection hole

41B‧‧‧周緣側氣體噴出孔 41B‧‧‧Circumferential gas ejection hole

42‧‧‧槽縫 42‧‧‧Slots

43‧‧‧氣體供應道 43‧‧‧Gas supply channel

44‧‧‧中央側氣體供應道 44‧‧‧Central side gas supply channel

45‧‧‧氣體擴散流道 45‧‧‧Gas diffusion channel

46‧‧‧周緣側氣體供應道 46‧‧‧Gas supply channel on peripheral side

402‧‧‧中心側氣體導入埠 402‧‧‧Center side gas inlet

404‧‧‧連接流道 404‧‧‧Connection runner

405‧‧‧周緣側氣體導入道 405‧‧‧Circumferential side gas inlet

Claims (16)

一種基板處理裝置，係將基板載置於處理容器內的載置台來供應氣體而對基板進行處理之基板處理裝置，具備有：分隔部，係與該載置台呈對向設置，而設置於配置有基板的處理空間與擴散有第1氣體的擴散空間之間；第1氣體供應部，係用以將該第1氣體供應至該擴散空間；複數第1氣體噴出孔，係在厚度方向上貫穿該分隔部所形成，而用以將擴散至該擴散空間之第1氣體噴出至該處理空間；以及第2氣體供應部，係包含有開口在該分隔部中之該處理空間側的氣體噴出面之複數第2氣體噴出孔，來將獨立於該第1氣體之第2氣體分別獨立地供應至橫向地並排在該處理空間中之複數區域；該複數區域係包含有以該基板的中心軸為中心之中央區域，以及圍繞該中央區域之周緣區域；該第2氣體供應部具有：對該中央區域供應第2氣體之中央側氣體供應部；以及對該周緣區域供應第2氣體之周緣側氣體供應部。 A substrate processing apparatus for processing a substrate by placing a substrate on a mounting table in a processing container and supplying gas to process the substrate, comprising: a partition part arranged opposite to the mounting table and provided in a disposition between the processing space with the substrate and the diffusion space in which the first gas is diffused; a first gas supply part for supplying the first gas to the diffusion space; a plurality of first gas ejection holes penetrating in the thickness direction The partition portion is formed for ejecting the first gas diffused into the diffusion space to the processing space; and the second gas supply portion includes a gas ejection surface opened in the partition portion on the side of the processing space The plurality of second gas ejection holes are used to independently supply the second gas independent of the first gas to a plurality of regions laterally arranged in the processing space; the plurality of regions include a central axis of the substrate as A central area of the center, and a peripheral area surrounding the central area; the second gas supply part has: a center-side gas supply part for supplying the second gas to the central area; and a peripheral-side gas for supplying the second gas to the peripheral area Supply Department. 如申請專利範圍第1項之基板處理裝置，其中該分隔部係由板狀體所構成；該中央側氣體供應部具備有：中央區域用氣體導入道，係形成於該板狀體周圍；以及中央區域用氣體流道，係一端側會連通於該氣體導入道般而形成於該板狀體內部，另一端側則沿著該氣體噴出面而延伸至該板狀體的中央區域，且開口出該第2氣體噴出孔；該周緣側氣體供應部具備有：周緣區域用氣體導入道，係形成於該板狀體周圍；以及周緣區域用氣體流道，係一端側會連通於該氣體導入道般而形成於該板狀體內部，另一端側則沿著該氣體噴出面而延伸至該板狀體的周緣區域，且開口出該第2氣體噴出孔。 The substrate processing apparatus according to claim 1, wherein the partition portion is formed of a plate-shaped body; the center-side gas supply portion is provided with: a gas introduction passage for a central region formed around the plate-shaped body; and The gas flow channel for the central area is formed inside the plate-shaped body as if one end side is connected to the gas inlet channel, and the other end side extends to the central area of the plate-shaped body along the gas ejection surface, and is open the second gas ejection hole; the peripheral side gas supply part is provided with: a gas introduction channel for the peripheral region, which is formed around the plate-like body; and a gas flow channel for the peripheral region, one end side of which is communicated with the gas introduction A channel is formed inside the plate-shaped body, and the other end side extends to the peripheral region of the plate-shaped body along the gas jetting surface, and opens out the second gas jetting hole. 如申請專利範圍第2項之基板處理裝置，其中該中央區域用氣體流道的另一端側係延伸至該板狀體的中央區域而分歧。 The substrate processing apparatus according to claim 2, wherein the central region is divided by the other end side of the gas flow channel extending to the central region of the plate-shaped body. 如申請專利範圍第2項之基板處理裝置，其係分別設置有複數個該中央區域用流道及該周緣區域用流道；若以該分隔部的厚度方向為高度方向，則係以高度方向的位置會相異之方式而設置有為了將氣體供應至各個複數該中央區域用流道而使氣體擴散之中央區域用擴散流道，以及為了將氣體供應至各個複數該周緣區域用流道而使氣體擴散之中周緣區域用擴散流道。 If the substrate processing apparatus of claim 2 of the scope of the application is provided with a plurality of the flow channels for the central region and the flow channels for the peripheral region, respectively; if the thickness direction of the partition is the height direction, the height direction In such a manner that the positions are different, there are provided a diffusion flow channel for the central region for supplying the gas to each of the plurality of flow channels for the central region and for diffusing the gas, and a flow channel for supplying the gas to each of the plurality of the peripheral regions. Diffusion flow channels are used in the peripheral region for gas diffusion. 如申請專利範圍第1項之基板處理裝置，其中該第1氣體為處理基板之處理氣體，該第2氣體為非活性氣體。 According to the substrate processing apparatus of claim 1, wherein the first gas is a processing gas for processing a substrate, and the second gas is an inert gas. 如申請專利範圍第1項之基板處理裝置，其係具備有用以將被供應至該擴散空間的第1氣體活性化之電漿產生部。 The substrate processing apparatus according to claim 1 is provided with a plasma generating section for activating the first gas supplied to the diffusion space. 如申請專利範圍第6項之基板處理裝置，其具備有離子捕集部，係以其內部的氣體流道會連通於該第1氣體噴出孔之方式而設置於較該第1氣體噴出孔要靠該擴散空間側，來捕集經活性化後之第1氣體中的離子。 For the substrate processing apparatus of claim 6 of the scope of the application, the ion trapping part is provided at a position higher than that of the first gas ejection hole in such a way that the gas flow channel in the inner part is communicated with the first gas ejection hole. On the diffusion space side, ions in the activated first gas are collected. 如申請專利範圍第7項之基板處理裝置，其中該分隔部係包含有會抑制離子捕集部的熱傳到處理空間側之隔熱組件。 The substrate processing apparatus according to claim 7, wherein the partition portion includes a heat insulating member for inhibiting the heat transfer of the ion trap portion to the processing space side. 如申請專利範圍第8項之基板處理裝置，其中該隔熱組件及該處理容器係由金屬所構成；該隔熱組件與該處理容器係以相互接觸之方式來加以配置。 According to the substrate processing apparatus of claim 8, wherein the thermal insulation component and the processing container are made of metal; the thermal insulation component and the processing container are arranged in contact with each other. 如申請專利範圍第8或9項之基板處理裝置，其中該分隔部係於該隔熱組件的內部設置有使第2氣體流通之流道。 The substrate processing apparatus according to claim 8 or 9, wherein the partition portion is provided with a flow channel for the second gas to flow in the interior of the heat insulating element. 如申請專利範圍第6項之基板處理裝置，其中該第1氣體係用以蝕刻該基板表面所形成的矽氮化膜之蝕刻氣體；該第2氣體係用以調整該處理空間中該第1氣體的分佈之分佈調整用氣體。 The substrate processing apparatus of claim 6, wherein the first gas system is used to etch the silicon nitride film formed on the substrate surface; the second gas system is used to adjust the first gas in the processing space Distribution adjustment gas for gas distribution. 如申請專利範圍第11項之基板處理裝置，其中在該蝕刻前或該蝕刻後用以去除該矽氮化膜表面處的氧化膜之氧化膜去除氣體係透過該擴散空間而從該第1氣體供應部被供應至該處理空間，或從該第2氣體供應部被供應至該處理空間。 The substrate processing apparatus of claim 11, wherein an oxide film removing gas system for removing the oxide film on the surface of the silicon nitride film before the etching or after the etching passes through the diffusion space to remove the first gas from the first gas The supply part is supplied to the processing space, or is supplied to the processing space from the second gas supply part. 如申請專利範圍第11或12項之基板處理裝置，其中該第1氣體供應部在對該擴散空間供應該蝕刻氣體之前，會先對該擴散空間供應用以將該矽氮化膜改質的改質氣體；該電漿產生部會將該改質用氣體活性化。 According to the substrate processing apparatus of claim 11 or 12, before supplying the etching gas to the diffusion space, the first gas supply unit supplies the diffusion space with a gas for modifying the silicon nitride film. reforming gas; the plasma generating part activates the reforming gas. 一種基板處理方法，係使用如申請專利範圍第1至13項中任一項基板處理裝置之基板處理方法，具有以下工序：蝕刻工序，係將被供應至該擴散空間之該第1氣體活性化並供應至該處理空間，來蝕刻該基板表面所形成的矽氮化膜；分佈調整工序，係為了調整該處理空間中該經活性化後之該第1氣體的分佈，而對橫向地並排在該處理空間中之複數區域分別供應第2氣體；以及在該蝕刻工序及該分佈調整工序後進行，會將用以去除該矽氮化膜表面處的氧化膜之氧化膜去除氣體透過該擴散空間而從該第1氣體供應部來供應至該處理空間，或從該第2氣體供應部來供應至該處理空間之工序。 A substrate processing method using the substrate processing apparatus according to any one of claims 1 to 13 of the scope of the application, comprising the following steps: an etching step for activating the first gas supplied to the diffusion space And supply to the processing space to etch the silicon nitride film formed on the surface of the substrate; the distribution adjustment process is to adjust the distribution of the activated first gas in the processing space, and laterally arranged in A plurality of regions in the processing space are respectively supplied with a second gas; and after the etching process and the distribution adjustment process, the oxide film removal gas for removing the oxide film on the surface of the silicon nitride film is passed through the diffusion space The process of supplying from the first gas supply part to the processing space, or supplying from the second gas supply part to the processing space. 如申請專利範圍第14項之基板處理方法，其具有以下工序：在該蝕刻工序及該分佈調整工序前進行，來將用以去除該基板表面處的氧化膜之氧化膜去除氣體透過該擴散空間而從該第1氣體供應部來供應至該處理空間，或從該第2氣體供應部來供應至該處理空間。 According to the substrate processing method of claim 14 of the scope of the application, it has the following steps: performed before the etching step and the distribution adjustment step, so as to pass the oxide film removing gas for removing the oxide film on the surface of the substrate through the diffusion space And it is supplied to this processing space from this 1st gas supply part, or is supplied to this processing space from this 2nd gas supply part. 如申請專利範圍第14或15項之基板處理方法，其具有以下工序：在該蝕刻工序及該分佈調整工序前，會從該第1氣體供應部來對該擴散空間供應用以將該矽氮化膜改質的改質氣體之工序；以及將該改質氣體活性化來供應至該基板之工序。 According to the substrate processing method of claim 14 or 15 of the scope of the patent application, it has the following steps: before the etching step and the distribution adjustment step, the diffusion space is supplied from the first gas supply part for the silicon nitride The process of modifying the reforming gas of the chemical film; and the process of activating the reforming gas and supplying the modified gas to the substrate.
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