TW201900917A - Substrate processing device and substrate processing method comprising a central side gas supply part and a peripheral side gas supply part - Google Patents
Substrate processing device and substrate processing method comprising a central side gas supply part and a peripheral side gas supply part Download PDFInfo
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- 230000002093 peripheral effect Effects 0.000 title claims abstract description 103
- 239000000758 substrate Substances 0.000 title claims description 79
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000005192 partition Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000007789 gas Substances 0.000 claims description 497
- 238000009792 diffusion process Methods 0.000 claims description 96
- 238000005530 etching Methods 0.000 claims description 35
- 150000002500 ions Chemical class 0.000 claims description 22
- 238000011282 treatment Methods 0.000 claims description 15
- 238000005040 ion trap Methods 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 238000002407 reforming Methods 0.000 claims description 5
- 230000003213 activating effect Effects 0.000 claims description 4
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 66
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 15
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 14
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910017855 NH 4 F Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 ammonium fluoroantimonate Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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- Drying Of Semiconductors (AREA)
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Abstract
Description
本發明關於一種對處理容器內所載置之基板供應氣體來進行處理之技術。 The present invention relates to a technique for processing a gas supplied to a substrate placed in a processing vessel.
作為半導體製造過程的其中一種有將反應氣體電漿化來進行蝕刻、成膜處理等之電漿處理。作為上述般的電漿處理裝置，已知有一種如專利文獻1所記載般，在處理容器內而於處理容器的上部側將處理氣體激發來電漿化，且將通過離子捕集部之自由基供應至基板之電漿處理裝置。 As one of the semiconductor manufacturing processes, there is a plasma treatment in which a reaction gas is plasma-treated to perform etching, film formation treatment, or the like. As described above, in the plasma processing apparatus, as described in Patent Document 1, the processing gas is excited in the processing container and the processing gas is excited to be slurryed, and the radical passing through the ion trap is free. A plasma processing device supplied to the substrate.
有一種方法係在電漿處理中，於處理容器內激發處理氣體時會對例如天線供應高頻電功率，來使處理容器內產生感應電場，而將被供應至處理容器內之處理氣體激發再供應至半導體晶圓(以下稱作「晶圓」)。然而，由於在空間內用以激發處理氣體之感應電場並非均勻，故電漿的分佈亦會容易變得不均勻。再者，電漿的分佈會容易受到磁場或電場的影響，而有難以調整其密度之問題。於是，便難以針對被供應至晶圓之自由基的面內分佈來獲得良好的均勻性。近年來，伴隨著晶圓所形成之電路圖案的微細化，針對晶圓處理的面內均勻性而被要求更高的精確度，於是，已被要求一種在處理模組中會調整針對基板之處理的面內分佈之技術。 One method is in the plasma processing, when the processing gas is excited in the processing container, for example, the antenna is supplied with high-frequency electric power to generate an induced electric field in the processing container, and the processing gas supplied to the processing container is excited and re-supplied. To semiconductor wafers (hereinafter referred to as "wafers"). However, since the induced electric field for exciting the processing gas in the space is not uniform, the distribution of the plasma may easily become uneven. Furthermore, the distribution of the plasma is susceptible to the influence of a magnetic field or an electric field, and it is difficult to adjust the density thereof. Thus, it is difficult to obtain good uniformity for the in-plane distribution of radicals supplied to the wafer. In recent years, with the miniaturization of circuit patterns formed by wafers, higher precision has been required for in-plane uniformity of wafer processing, and thus, it has been required to adjust a substrate for a processing module. The technique of in-plane distribution of processing.
專利文獻2中雖記載一種對晶圓W的周緣部供應附加氣體，並調整氣體的濃度以調整晶圓W的面內均勻性之技術，但有無法對晶圓W的中心側供應附加氣體之問題。又，亦未考慮將處理氣體電漿化來供應至晶圓之範例。 Patent Document 2 describes a technique of supplying an additional gas to the peripheral portion of the wafer W and adjusting the concentration of the gas to adjust the in-plane uniformity of the wafer W. However, it is impossible to supply an additional gas to the center side of the wafer W. problem. Also, an example of plasma processing gas to be supplied to a wafer is not considered.
[先前技術文獻] [Previous Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1：日本特開2006-324023號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-324023
專利文獻2：日本專利第5192214號公報 Patent Document 2: Japanese Patent No. 5,921,214
本發明係鑑於上述般情事所發明者，其目的為提供一種對處理容器內所載置之基板供應氣體時，可調整氣體濃度的面內分佈之技術。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a technique for adjusting the in-plane distribution of gas concentration when supplying a gas to a substrate placed in a processing container.
本發明之基板處理裝置係將基板載置於處理容器內的載置台來供應氣體而對基板進行處理之基板處理裝置，具備有：分隔部，係與該載置台呈對向設置，而設置於配置有基板的處理空間與擴散有第1氣體的擴散空間之間；第1氣體供應部，係用以將該第1氣體供應至該擴散空間；複數第1氣體噴出孔，係在厚度方向上貫穿該分隔部所形成，而用以將擴散至該擴散空間之第1氣體噴出至該處理空間；以及第2氣體供應部，係包含有開口在該分隔部中之該處理空間側的氣體噴出面之複數第2氣體噴出孔，來將獨立於該第1氣體之第2氣體供應至處理空間；該第2氣體供應部係具備有以會對處理空間中在水平方向上被分割之每個複數區域分別獨立地供應第2氣體之方式來加以構成的各區域之氣體供應部。 In the substrate processing apparatus of the present invention, the substrate processing apparatus that mounts the substrate on the mounting table in the processing container to supply the gas and processes the substrate includes a partition portion that is disposed opposite to the mounting table and is disposed on the substrate processing device a processing space in which the substrate is disposed and a diffusion space in which the first gas is diffused; the first gas supply unit supplies the first gas to the diffusion space; and the plurality of first gas ejection holes are in the thickness direction a first gas that is formed to penetrate the partition to discharge the first gas diffused into the diffusion space to the processing space; and a second gas supply portion that includes a gas discharge opening on the processing space side of the partition a plurality of second gas ejection holes for supplying a second gas independent of the first gas to the processing space; and the second gas supply portion is provided for each of the processing spaces to be divided in the horizontal direction A gas supply unit of each region in which the plurality of regions are independently supplied with the second gas.
本發明之基板處理方法，係使用上述基板處理裝置之基板處理方法，具有以下工序：蝕刻工序，係將被供應至該擴散空間之該第1氣體活性化並供應至該處理空間，來蝕刻該基板表面所形成的矽氮化膜；分佈調整工序，係為了調整該處理空間中該經活性化後之該第1氣體的分佈，而對橫向地並排在該處理空間中之複數區域分別供應第2氣體；以及在該蝕刻工序及該分佈調整工序後進行，會將用以去除該矽氮化膜表面處的氧化膜之氧化膜去除氣體透過該擴散空間而從該第1氣體供應部來供應至該處理空間，或從該第2氣體供應部來供應至該處理空間之工序。 The substrate processing method of the present invention is a substrate processing method using the substrate processing apparatus, and the etching step of activating the first gas supplied to the diffusion space and supplying the first gas to the processing space to etch the substrate a germanium nitride film formed on the surface of the substrate; the distribution adjustment step is for supplying a plurality of regions laterally arranged in the processing space in order to adjust the distribution of the activated first gas in the processing space 2 gas; and after the etching step and the distribution adjusting step, the oxide film removing gas for removing the oxide film on the surface of the tantalum nitride film is supplied through the diffusion space and supplied from the first gas supply unit The process to the processing space or the supply to the processing space from the second gas supply unit.
本發明係在對處理容器內所載置之被處理基板供應氣體之基板處理裝置中，藉由分隔部來將處理容器內區劃為使氣體擴散之擴散區域，以及對基板進行氣體處理之處理區域，來對擴散空間供應第1氣體。被供應至擴散空間之第1氣體係透過形成於分隔部的第1氣體供應孔來做供應，並且由設置於分隔部的下面之第2氣體供應孔來獨立於第1氣體而將第2氣體供應至處理空間。再者，在供應第2氣體時，係相互獨立地設置有會對包含有基板的中心軸之中央區域供應第2氣體之中央側氣體供應部，以及從圍繞中央區域之周緣區域來供應第2氣體之周緣側氣體供應部。於是，便可在載置台的中心側與載置台的周緣側處獨立地改變第2氣體的供應量，從而可調整基板之氣體處理的面內分佈。 According to the present invention, in a substrate processing apparatus for supplying a gas to a substrate to be processed placed in a processing container, the processing chamber is partitioned into a diffusion region for diffusing the gas and a processing region for gas-treating the substrate by the partition portion. To supply the first gas to the diffusion space. The first gas system supplied to the diffusion space is supplied through the first gas supply hole formed in the partition, and the second gas is independent of the first gas by the second gas supply hole provided on the lower surface of the partition. Supply to processing space. Further, when the second gas is supplied, the center side gas supply unit that supplies the second gas to the central region including the central axis of the substrate is provided independently of each other, and the second side is supplied from the peripheral region around the central region. a gas supply portion on the peripheral side of the gas. Therefore, the supply amount of the second gas can be independently changed at the center side of the mounting table and the peripheral side of the mounting table, and the in-plane distribution of the gas treatment of the substrate can be adjusted.
2‧‧‧電漿處理裝置 2‧‧‧ Plasma processing unit
3‧‧‧載置台 3‧‧‧ mounting table
4、8‧‧‧噴淋板 4, 8‧‧‧ spray board
5‧‧‧分隔部 5‧‧‧Departure
7‧‧‧噴淋頭 7‧‧‧Sprinkler
20‧‧‧處理容器 20‧‧‧Processing container
41A‧‧‧中央側氣體噴出孔 41A‧‧‧Central side gas ejection hole
41B‧‧‧周緣側氣體噴出孔 41B‧‧‧Surface side gas ejection hole
42‧‧‧槽縫 42‧‧‧Slots
51‧‧‧離子捕集部 51‧‧‧Ion Capture Department
D‧‧‧擴散空間 D‧‧‧Diffusion space
P‧‧‧電漿空間 P‧‧‧Pulp space
S‧‧‧處理空間 S‧‧‧ processing space
W‧‧‧晶圓 W‧‧‧ wafer
圖1為第1實施型態相關之多腔室系統的平面圖。 Fig. 1 is a plan view showing a multi-chamber system according to a first embodiment.
圖2為第1實施型態相關之電漿處理裝置的縱剖視圖。 Fig. 2 is a longitudinal sectional view showing a plasma processing apparatus according to a first embodiment.
圖3從上方側來觀看噴淋板之平面圖。 Figure 3 is a plan view of the shower plate viewed from the upper side.
圖4從下方來觀看噴淋板之平面圖。 Figure 4 shows a plan view of the shower plate from below.
圖5為該噴淋板的縱剖視圖。 Fig. 5 is a longitudinal sectional view of the shower plate.
圖6為該噴淋板的橫剖視圖。 Figure 6 is a cross-sectional view of the shower plate.
圖7為該噴淋板的剖面立體圖。 Fig. 7 is a cross-sectional perspective view of the shower plate.
圖8為離子捕集部的剖視圖。 Fig. 8 is a cross-sectional view of the ion trapping portion.
圖9係顯示離子捕集部之平面圖。 Figure 9 is a plan view showing the ion trapping portion.
圖10係顯示電漿處理裝置的作用之說明圖。 Fig. 10 is an explanatory view showing the action of the plasma processing apparatus.
圖11係顯示電漿處理裝置的作用之說明圖。 Fig. 11 is an explanatory view showing the action of the plasma processing apparatus.
圖12為本發明實施型態的其他範例中之噴淋板的說明圖。 Fig. 12 is an explanatory view of a shower plate in another example of the embodiment of the present invention.
圖13係顯示進行有本發明基板處理的晶圓之剖視圖。 Figure 13 is a cross-sectional view showing a wafer on which the substrate of the present invention is processed.
圖14係顯示本發明實施型態之其他範例的作用之說明圖。 Fig. 14 is an explanatory view showing the action of another example of the embodiment of the present invention.
圖15係顯示本發明實施型態之其他範例的作用之說明圖。 Fig. 15 is an explanatory view showing the action of another example of the embodiment of the present invention.
圖16係顯示蝕刻處理後的晶圓之剖視圖。 Figure 16 is a cross-sectional view showing the wafer after the etching process.
圖17係顯示第2實施型態相關之噴淋板的上面側之平面圖。 Fig. 17 is a plan view showing the upper surface side of the shower plate according to the second embodiment.
圖18係顯示第2實施型態相關之噴淋板的下面側之平面圖。 Fig. 18 is a plan view showing the lower side of the shower plate according to the second embodiment.
圖19係顯示第2實施型態相關之噴淋板的縱剖視圖。 Fig. 19 is a longitudinal sectional view showing a shower plate according to a second embodiment.
圖20係顯示第2實施型態相關之噴淋板的縱剖視圖。 Fig. 20 is a longitudinal sectional view showing a shower plate according to a second embodiment.
圖21係顯示第3實施型態相關之基板處理裝置的縱剖視圖。 Fig. 21 is a longitudinal sectional view showing a substrate processing apparatus according to a third embodiment.
圖22係顯示第3實施型態相關之噴淋頭的平面圖。 Fig. 22 is a plan view showing a shower head according to a third embodiment.
圖23係顯示第3實施型態相關之噴淋頭的平面圖。 Figure 23 is a plan view showing a shower head according to a third embodiment.
[第1實施型態] [First embodiment]
針對將第1實施型態相關之基板處理裝置應用於電漿處理裝置之範例來加以說明。圖1係顯示具備電漿處理裝置且為多腔室系統之真空處理裝置。真空處理裝置係具備有藉由乾燥氣體(例如乾燥後的氮氣)來將其內部氛圍保持為常壓氛圍之橫向長方形的常壓搬送室12，常壓搬送室12的前方係並排地設置有用以載置搬送容器C之3台載置埠11。 An example in which the substrate processing apparatus according to the first embodiment is applied to a plasma processing apparatus will be described. Fig. 1 shows a vacuum processing apparatus having a plasma processing apparatus and being a multi-chamber system. The vacuum processing apparatus is provided with a horizontally-transparent atmospheric pressure transfer chamber 12 in which the internal atmosphere is maintained at a normal pressure atmosphere by a dry gas (for example, nitrogen gas after drying), and the front side of the normal pressure transfer chamber 12 is provided side by side. Three stacking cassettes 11 are placed on the transport container C.
常壓搬送室12的正面壁係安裝有會和該搬送容器C的蓋一起被開閉之門17。常壓搬送室12內係設置有用以搬送晶圓W而由關節臂所構成的搬送機構15。常壓搬送室12中之載置埠11的相反側係並排地配置有例如2個加載互鎖室13。加載互鎖室13與常壓搬送室12之間係設置有閘閥18，從加載互鎖室13的常壓搬送室12側來觀看，深處側係透過閘閥19而配置有真空搬送室10。 The front wall of the atmospheric pressure transfer chamber 12 is attached with a door 17 that is opened and closed together with the cover of the transfer container C. In the atmospheric pressure transfer chamber 12, a transport mechanism 15 configured to transport the wafer W and consist of an articulated arm is provided. On the opposite side of the mounting crucible 11 in the atmospheric pressure transfer chamber 12, for example, two load lock chambers 13 are arranged side by side. A gate valve 18 is provided between the load lock chamber 13 and the normal pressure transfer chamber 12, and is viewed from the side of the normal pressure transfer chamber 12 of the load lock chamber 13, and the vacuum transfer chamber 10 is disposed at the deep side through the gate valve 19.
真空搬送室10係連接有會進行例如成膜處理、PHT(Post Heat Treatment)處理及電漿處理之製程模組1。真空搬送室10係設置有具備關節臂所構成的2根搬送臂之搬送機構16，藉由搬送機構16而在各加載互鎖室13及各製程模組1之間進行晶圓W的傳遞。又，真空處理裝置中的常壓搬送室12係連接有用以冷卻晶圓W之冷卻裝置14。例如，成膜裝置會例如在晶圓W成膜出氮化矽(SiN)膜，並且PHT裝置會加熱電漿處理後的晶圓W，來使電漿處理中所生成的反應生成物昇華。 The vacuum transfer chamber 10 is connected to a process module 1 that performs, for example, a film forming process, a PHT (Post Heat Treatment) process, and a plasma process. The vacuum transfer chamber 10 is provided with a transfer mechanism 16 having two transfer arms constituted by articulated arms, and the transfer mechanism 16 transfers the wafer W between the load lock chambers 13 and the respective process modules 1. Further, the atmospheric pressure transfer chamber 12 in the vacuum processing apparatus is connected to a cooling device 14 for cooling the wafer W. For example, the film forming apparatus forms, for example, a tantalum nitride (SiN) film on the wafer W, and the PHT apparatus heats the plasma-processed wafer W to sublimate the reaction product generated in the plasma processing.
接著，針對真空處理裝置所設置之製程模組1中的電漿處理裝置2，亦參閱圖2來加以說明。此處係以將例如三氟化氮(NF3)氣體、氧(O2)氣、及 H2氣體激發，且使用激發後的自由基來對形成於晶圓W之SiN膜進行蝕刻之電漿處理裝置為例來加以說明。電漿處理裝置2係具有鋁等金屬製真空容器所構成的處理容器20。如圖2所示，電漿處理裝置係具有左右並排而被加以連結之2個處理容器20，被連結的2個處理容器20之前後方向一面側係形成有用以在與圖1所示的真空搬送室10之間進行晶圓W的搬出入，且為2個處理容器20所共通之搬送口22，該搬送口22係藉由閘閥21而構成為開閉自如。 Next, the plasma processing apparatus 2 in the process module 1 provided in the vacuum processing apparatus will be described with reference to FIG. Here, the SiN film formed on the wafer W is etched by exciting, for example, nitrogen trifluoride (NF 3 ) gas, oxygen (O 2 ) gas, and H 2 gas, using the excited radicals. The slurry processing apparatus will be described as an example. The plasma processing apparatus 2 is a processing container 20 which consists of a metal vacuum container, such as aluminum. As shown in Fig. 2, the plasma processing apparatus has two processing containers 20 that are connected side by side and connected to each other, and the two processing containers 20 that are connected are formed side by side in the front and rear directions to be used in the vacuum shown in Fig. 1. In the transfer chamber 10, the wafer W is carried in and out, and the transfer port 22 is common to the two processing containers 20. The transfer port 22 is configured to be openable and closable by the gate valve 21.
如圖2所示，被連結的處理容器20內係藉由上部側所設置之隔壁23與隔壁23的下方所設置之區劃壁24而被區隔為各處理容器20。區劃壁24係藉由例如升降機構25而構成為升降自如，使區劃壁24下降時，雖然2個處理容器20中置放有載置台3的處理空間彼此會連通，可將晶圓W搬入至各處理容器20內，但藉由使區劃壁24上升，則2個處理空間便會被相互地加以區隔。此外，由於電漿處理裝置2中的2個處理容器20內係構成為大致相同，故以下便針對其中一處理容器20來加以說明。 As shown in FIG. 2, the inside of the processing container 20 to be connected is partitioned into the respective processing containers 20 by the partition wall 23 provided on the upper side and the partition wall 24 provided below the partition wall 23. The partition wall 24 is configured to be movable up and down by, for example, the elevating mechanism 25, and when the partition wall 24 is lowered, the processing space in which the mounting table 3 is placed in the two processing containers 20 communicates with each other, and the wafer W can be carried to In each of the processing containers 20, the two processing spaces are separated from each other by raising the partition wall 24. Further, since the two processing containers 20 in the plasma processing apparatus 2 are configured to be substantially the same, one of the processing containers 20 will be described below.
如圖1、圖2所示，處理容器2係配置有用以水平地保持晶圓W之載置台3。又，載置台3的內部係形成有調溫流道33，調溫流道係流通有例如水等調溫用媒介，在後述的自由基處理中，會將晶圓W的溫度調整為例如10~120℃。又，載置台3係於圓周方向等間隔地設置有3根從載置台表面出沒般所設置之升降銷(圖中未顯示)。 As shown in FIGS. 1 and 2, the processing container 2 is provided with a mounting table 3 for holding the wafer W horizontally. Further, a temperature control flow path 33 is formed in the interior of the mounting table 3, and a temperature control medium such as water is passed through the temperature control flow path, and the temperature of the wafer W is adjusted to, for example, 10 in a radical process to be described later. ~120 °C. Further, the mounting table 3 is provided with three lift pins (not shown) that are provided from the surface of the mounting table at equal intervals in the circumferential direction.
各處理容器20中之頂板部分係設置有例如石英板等所構成的介電窗26。各介電窗26的上面側係載置有漩渦狀的平面線圈所構成之高頻天線27。線圈狀高頻天線27的端部係透過匹配器28而連接有會輸出例如200~1200W的高頻之高頻電源29。高頻天線27、匹配器28及高頻電源29係相當於電漿產生部。 A dielectric window 26 made of, for example, a quartz plate or the like is provided in the top plate portion of each of the processing containers 20. A high frequency antenna 27 including a spiral planar coil is placed on the upper surface side of each of the dielectric windows 26. The end portion of the coil-shaped high-frequency antenna 27 is connected to a high-frequency power source 29 that outputs a high frequency of, for example, 200 to 1200 W through the matching unit 28. The high frequency antenna 27, the matching unit 28, and the high frequency power source 29 correspond to a plasma generating unit.
又，各處理容器20皆形成有用以供應第1氣體之氣體供應口34，氣體供應口34係連接有氣體供應管35的一端側。氣體供應管35的另一端側係分歧為3根，各端部係分別連接有NF3氣體供應源36、H2氣體供應源37及O2氣體供應源38。此外，圖2中的V1~V3為閥體，M1~M3為流量調整部。藉此，便會構成為可分別以特定流量來將NF3氣體、H2氣體及O2氣體 供應至處理容器20內。從氣體供應口34所供應之該等氣體係相當於第1氣體。 Further, each of the processing containers 20 is formed with a gas supply port 34 for supplying a first gas, and the gas supply port 34 is connected to one end side of the gas supply pipe 35. The other end side of the gas supply pipe 35 is divided into three, and each end is connected to an NF 3 gas supply source 36, an H 2 gas supply source 37, and an O 2 gas supply source 38, respectively. Further, V1 to V3 in Fig. 2 are valve bodies, and M1 to M3 are flow rate adjustment sections. Thereby, it is configured to supply NF 3 gas, H 2 gas, and O 2 gas to the processing container 20 at a specific flow rate, respectively. The gas systems supplied from the gas supply port 34 correspond to the first gas.
處理容器20中之載置台3的上方係設置有分隔部5，會將處理容器20內分隔為供NF3氣體、O2氣體及H2氣體擴散之擴散空間且為激發電漿之電漿空間P，以及對載置台3所載置的晶圓W進行自由基處理之處理空間S。 A partition portion 5 is disposed above the mounting table 3 in the processing container 20, and the inside of the processing container 20 is partitioned into a diffusion space for diffusion of NF 3 gas, O 2 gas, and H 2 gas, and is a plasma space for exciting plasma. P and a processing space S for performing radical treatment on the wafer W placed on the mounting table 3.
分隔部5係具備有噴淋板4與離子捕集部51，而從下方側依此順序來加以配置。由於噴淋板4及離子捕集部51會有因相互的熱膨脹率差而摩擦便產生微粒之虞，故係使用例如間隔件等而以不會相互接觸之方式透過間隙來加以配置。 The partition portion 5 is provided with the shower plate 4 and the ion trap portion 51, and is disposed in this order from the lower side. Since the shower plate 4 and the ion trapping portion 51 are rubbed by the difference in mutual thermal expansion rate, fine particles are generated by rubbing, and therefore, they are disposed so as to pass through the gap without being in contact with each other by using, for example, a spacer.
有關噴淋板4，亦參閱圖3~圖7來加以說明。圖3係顯示從上方側來觀看各處理容器20所設置的噴淋板4之圖式，圖4係顯示從載置台3側來觀看一處理容器20內的噴淋板4之平面圖。又，圖5為噴淋板4的縱剖視圖，圖6係顯示從載置台3側來觀看噴淋板4的橫剖面之剖視圖，圖7係顯示以剖面來呈現噴淋板4的一部分之立體圖。此外圖7中，形成於凸緣400之氣體擴散流道45及氣體導入道403的頂面雖係藉由板狀的組件而被封閉，但為了便於說明，係將氣體擴散流道45及氣體導入道403的頂面開放來加以顯示。如後所述，噴淋板4內雖形成有用以將第2氣體(即非活性氣體，例如氬(Ar)氣)供應至處理空間S側之流道，但在圖2中，噴淋板4的剖面由於製圖的困難性，故係以斜線來加以顯示，而針對後述之內部的流道並未加以顯示。噴淋板4係由例如鋁板所構成，如圖3所示，將各處理容器20內加以分隔之噴淋板4係構成為相互連接之1片板狀體40。 The shower plate 4 will also be described with reference to FIGS. 3 to 7. 3 is a view showing the shower plate 4 provided in each of the processing containers 20 viewed from the upper side, and FIG. 4 is a plan view showing the shower plate 4 in the processing container 20 viewed from the side of the mounting table 3. 5 is a longitudinal cross-sectional view of the shower plate 4, FIG. 6 is a cross-sectional view showing a cross section of the shower plate 4 viewed from the side of the mounting table 3, and FIG. 7 is a perspective view showing a part of the shower plate 4 in a cross section. . Further, in Fig. 7, the gas diffusion channel 45 and the gas introduction channel 403 formed on the flange 400 are closed by a plate-like assembly, but for convenience of explanation, the gas diffusion channel 45 and gas are used. The top surface of the introduction track 403 is opened for display. As will be described later, although a flow path for supplying a second gas (i.e., an inert gas such as argon (Ar) gas) to the processing space S side is formed in the shower plate 4, in Fig. 2, the shower plate is provided. Since the cross section of 4 is difficult to draw, it is displayed by oblique lines, and the internal flow path to be described later is not shown. The shower plate 4 is composed of, for example, an aluminum plate. As shown in FIG. 3, the shower plate 4 that partitions each of the processing containers 20 is configured as a single plate-like body 40 that is connected to each other.
板狀體40中之噴淋板4的周圍係形成有凸緣400，噴淋板4係構成為將凸緣400插入至處理容器20的周壁內來加以固定，而透過該凸緣400來使噴淋板4的熱在處理容器20的內壁傳遞並擴散。又，亦可構成為凸緣400的內部係形成有冷媒流道來冷卻噴淋板4。 A flange 400 is formed around the shower plate 4 in the plate-like body 40, and the shower plate 4 is configured to be inserted into the peripheral wall of the processing container 20 to be fixed, and is passed through the flange 400. The heat of the shower plate 4 is transmitted and spread on the inner wall of the processing container 20. Further, a cooling medium flow path may be formed inside the flange 400 to cool the shower plate 4.
如圖3、圖4所示，若以處理容器20的並排方向為左右，則將噴淋板4分隔為前後之2個半圓狀的區域係於左右方向並排地形成有分別延伸於前後方向，且在厚度方向上貫穿噴淋板4般所形成的槽縫42。如圖5所示，槽縫42係構成為例如寬度會較後述離子捕集部51所形成的槽縫42要廣， 且構成為會朝向下面側的開口部而口徑擴張。又，槽縫42之開口部的端部為倒角，而構成為會抑制通過槽縫42之氣體的傳導率降低。 As shown in FIG. 3 and FIG. 4, when the direction in which the processing containers 20 are arranged side by side is left and right, the two semicircular regions in which the shower plate 4 is partitioned into the front and rear are formed in the left-right direction and are respectively extended in the front-rear direction. Further, the slit 42 formed in the thickness direction is formed through the shower plate 4. As shown in FIG. 5, the slit 42 is configured to have a wider width than the slit 42 formed by the ion trapping portion 51 to be described later, and is configured to expand toward the opening on the lower surface side. Further, the end portion of the opening portion of the slit 42 is chamfered, and is configured to suppress a decrease in the conductivity of the gas passing through the slit 42.
又，如圖4、圖6所示，噴淋板4的內部係形成有在形成槽縫42的半圓狀區域之間而往左右方向(處理容器20的並排方向)延伸之氣體供應道43。氣體供應道43中之噴淋板4中央附近的部位係橫跨噴淋板4中央附近的圓形區域(中央區域)，而於各槽縫42的間隙形成有從氣體供應道43往正交之方向(前後方向)分歧之複數中央側氣體供應道44。又，如圖4、圖6及圖7所示，氣體供應道43中之噴淋板4的周緣側端部係連接於凸緣400內部所形成之中央側氣體導入埠402。中央側氣體導入埠402係透過中央側氣體供應管47而連接有Ar氣體供應源48，中央側氣體供應管47係自上游側設置有流量調整部M4及閥體V4。又，如圖4、圖5及圖7所示，中央側氣體供應道44係分散地形成有開口在噴淋板4的載置台3側一面(即氣體噴出面)之中央側氣體噴出孔41A。該氣體供應道43、中央側氣體供應道44、中央側氣體導入道402、中央側氣體供應管47、Ar氣體供應源48、流量調整部M4、閥體V4及中央側氣體噴出孔41A係相當於中央側氣體供應部。 Further, as shown in FIGS. 4 and 6, the inside of the shower plate 4 is formed with a gas supply path 43 extending between the semicircular regions forming the slits 42 and extending in the left-right direction (the direction in which the processing containers 20 are arranged). The portion near the center of the shower plate 4 in the gas supply path 43 is a circular area (central area) near the center of the shower plate 4, and the gap between the slits 42 is formed to be orthogonal from the gas supply path 43. A plurality of central side gas supply passages 44 that are divergent in the direction (front-rear direction). Further, as shown in FIG. 4, FIG. 6, and FIG. 7, the peripheral side end portion of the shower plate 4 in the gas supply path 43 is connected to the center side gas introduction port 402 formed inside the flange 400. The center side gas introduction port 402 is connected to the Ar side gas supply source 48 through the center side gas supply pipe 47, and the center side gas supply pipe 47 is provided with the flow rate adjustment unit M4 and the valve body V4 from the upstream side. Further, as shown in FIG. 4, FIG. 5 and FIG. 7, the center side gas supply path 44 is formed with a central side gas discharge hole 41A having an opening on the side of the mounting table 3 of the shower plate 4 (that is, the gas ejection surface). . The gas supply path 43, the center side gas supply path 44, the center side gas introduction path 402, the center side gas supply pipe 47, the Ar gas supply source 48, the flow rate adjustment unit M4, the valve body V4, and the center side gas discharge hole 41A are equivalent. At the central side gas supply.
又，如圖4、圖6及圖7所示，噴淋板4前後周圍處的凸緣400內部係形成有沿該噴淋板4的周緣而延伸成圓弧狀之氣體擴散流道45，噴淋板4中之中央區域周圍的周緣區域內部則於各槽縫42的間隙形成有從氣體擴散流道45分歧而延伸於前後方向之周緣側氣體供應道46。各氣體擴散流道45係從在長度方向上將各個氣體擴散流道45二等分之位置起，朝向板狀體40的周緣側且延伸於前後方向般地拉出形成有連接流道404。更具體地敘述，如上所述，氣體擴散流道45雖為圓弧狀，但連接流道404係沿該圓弧的法線方向所形成。然後，該連接流道404的上游側係彎曲而形成周緣側氣體導入道405。該周緣側氣體導入道405係朝向板狀體40左右的中央部，而會與連接流道404的伸長方向正交般地伸長，該周緣側氣體導入道405的上游端係連接於周緣部側氣體導入埠403。 Further, as shown in FIG. 4, FIG. 6, and FIG. 7, the inside of the flange 400 at the front and rear of the shower plate 4 is formed with a gas diffusion flow path 45 extending in an arc shape along the periphery of the shower plate 4. Inside the peripheral portion around the central portion of the shower plate 4, a peripheral side gas supply path 46 that extends from the gas diffusion flow path 45 and extends in the front-rear direction is formed in the gap between the slits 42. Each of the gas diffusion passages 45 is formed by connecting the respective gas diffusion passages 45 in the longitudinal direction from the circumferential direction side of the plate-like body 40 and extending in the front-rear direction to form the connection flow path 404. More specifically, as described above, although the gas diffusion flow path 45 has an arc shape, the connection flow path 404 is formed along the normal direction of the circular arc. Then, the upstream side of the connection flow path 404 is curved to form the peripheral side gas introduction path 405. The peripheral side gas introduction passage 405 is formed to extend toward the center portion of the left and right sides of the plate-like body 40, and is elongated in a direction orthogonal to the direction in which the connecting passage 404 extends. The upstream end of the peripheral side gas introduction passage 405 is connected to the peripheral portion side. The gas is introduced into the crucible 403.
圖6中，箭頭所指向之虛線的框內係將連接流道404及氣體擴散流道45擴大來加以顯示。如該圖6所示，連接流道404的寬度d係形成為較周緣側氣體導入道405的流道寬度D要來得細(D>d)。例如周緣側氣體導入道 405的流道寬度D為4~10mm，連接流道404的流道寬度d為2~6mm。又，連接流道404的長度L為連接流道404之流道寬度d的2倍以上長度(L≧2d)，連接流道404的長度L係形成為例如4~12mm。 In Fig. 6, the inside of the broken line indicated by the arrow expands the connecting flow path 404 and the gas diffusion flow path 45 to be displayed. As shown in FIG. 6, the width d of the connection flow path 404 is formed to be thinner than the flow path width D of the peripheral side gas introduction path 405 (D>d). For example, the flow path width D of the peripheral side gas introduction passage 405 is 4 to 10 mm, and the flow path width d of the connection flow passage 404 is 2 to 6 mm. Further, the length L of the connection flow path 404 is twice or more the length (L≧2d) of the flow path width d of the connection flow path 404, and the length L of the connection flow path 404 is formed to be, for example, 4 to 12 mm.
周緣側氣體導入埠403係透過周緣側氣體供應管49而連接有Ar氣體供應源48。周緣側氣體供應管49係從上游側設置有流量調整部M5及閥體V5。又，如圖4、圖5及圖7所示，周緣側氣體供應道46係分散地形成有開口在噴淋板4的載置台3側一面之周緣側氣體噴出孔41B。該氣體擴散流道45、周緣側氣體供應道46、周緣側氣體導入埠403、連接流道404、周緣側氣體導入道405、周緣側氣體供應管49、Ar氣體供應源48、流量調整部M5、閥體V5及周緣側氣體噴出孔41B係相當於周緣側氣體供應部。圖4中，係以黑點來表示中央側氣體噴出孔41A，而以白點來表周緣側氣體噴出孔41B。 The peripheral side gas introduction port 403 is connected to the Ar gas supply source 48 through the peripheral side gas supply pipe 49. The peripheral side gas supply pipe 49 is provided with a flow rate adjusting portion M5 and a valve body V5 from the upstream side. Further, as shown in FIG. 4, FIG. 5, and FIG. 7, the peripheral side gas supply passage 46 is formed with a peripheral side gas discharge hole 41B that is opened on the side of the mounting table 3 of the shower plate 4. The gas diffusion flow path 45, the peripheral side gas supply path 46, the peripheral side gas introduction port 403, the connection flow path 404, the peripheral side gas introduction path 405, the peripheral side gas supply pipe 49, the Ar gas supply source 48, and the flow rate adjustment portion M5. The valve body V5 and the peripheral side gas discharge hole 41B correspond to the peripheral side gas supply portion. In FIG. 4, the center side gas discharge hole 41A is indicated by a black dot, and the peripheral side side gas discharge hole 41B is indicated by a white point.
離子捕集部51如圖8所示，例如係由上下配置之2片石英板51a、51b所構成。2片石英板51a、51b之間係沿著周緣部而設置有例如石英製的間隔件52，2片石英板51a、51b係透過間隙而對向般地加以配置。各石英板51a、51b如圖8、圖9所示，係形成有延伸於左右方向且分別貫穿於厚度方向之複數個槽縫53、54，從上方側來觀看各石英板51a、51b所形成的槽縫53、54時，係以其位置不會相互重疊之方式而形成為互有差異。此外，圖3~圖9中係概略地顯示槽縫42、53、54及中央側氣體噴出孔41A、周緣側氣體噴出孔41B，而未正確地記載槽縫及噴出孔的配置間隔或數量。 As shown in FIG. 8, the ion trapping unit 51 is composed of, for example, two quartz plates 51a and 51b arranged vertically. A spacer 52 made of, for example, quartz is provided between the two quartz plates 51a and 51b along the peripheral edge portion, and the two quartz plates 51a and 51b are disposed to face each other through the gap. As shown in FIGS. 8 and 9, each of the quartz plates 51a and 51b is formed with a plurality of slits 53 and 54 extending in the left-right direction and penetrating in the thickness direction, and the quartz plates 51a and 51b are formed from the upper side. When the slits 53 and 54 are formed, they are formed so as not to overlap each other. In addition, in FIGS. 3 to 9, the slits 42, 53, 54 and the center side gas discharge hole 41A and the peripheral side gas discharge hole 41B are schematically shown, and the arrangement interval or the number of the slits and the discharge holes are not accurately described.
此外，第1實施型態中，噴淋板4及形成於離子捕集板51之槽縫42、53、54係相當於第1氣體供應孔。 Further, in the first embodiment, the shower plate 4 and the slits 42, 53, 54 formed in the ion trap plate 51 correspond to the first gas supply holes.
回到圖2，處理容器20的底面係開口出排氣口61，排氣口61係連接有排氣道62。該排氣道62係構成為會透過例如擺錘閥(Pendulum valve)所構成的壓力調整閥等而連接有真空幫浦等真空排氣部6，可將處理容器20內減壓至特定的真空壓力。 Referring back to FIG. 2, the bottom surface of the processing container 20 is opened to the exhaust port 61, and the exhaust port 61 is connected to the exhaust duct 62. The exhaust passage 62 is configured such that a vacuum exhaust unit 6 such as a vacuum pump is connected to a pressure regulating valve formed by, for example, a pendulum valve, and the inside of the processing container 20 can be depressurized to a specific vacuum. pressure.
又，如圖1所示，真空處理裝置係具有控制部9，該控制部9係具有程式、記憶體、CPU。該等程式係被收納在電腦記憶媒體(例如光碟、硬碟、磁光碟等)且被安裝在控制部9。程式係包含有步驟群來實施包含有晶圓W 的搬送或電漿處理裝置2中之各氣體的供給或停止之處理的一連串動作。 Further, as shown in FIG. 1, the vacuum processing apparatus includes a control unit 9 having a program, a memory, and a CPU. These programs are stored in a computer memory medium (for example, a compact disc, a hard disk, a magneto-optical disc, etc.) and are mounted in the control unit 9. The program includes a series of operations for performing a process including the transfer of the wafer W or the supply or stop of each gas in the plasma processing apparatus 2 in a step group.
針對上述實施型態的作用來加以說明。例如，將收納有晶圓W之搬送容器C搬入至真空處理裝置的載置埠11後，從搬送容器C來取出晶圓W，並透過常壓搬送室12及加載互鎖室13來搬送至真空搬送室10。接著，藉由搬送機構16來將晶圓W搬送至成膜裝置，而成膜出SiN膜。之後藉由搬送機構16來將晶圓W從成膜裝置取出，並搬送至電漿處理裝置2。電漿處理裝置2中，係藉由例如各載置台3的升降銷與搬送機構16之協動作用來傳遞晶圓W，並載置於各載置台3。搬入有作為蝕刻對象的晶圓W後，使搬送裝置退開至真空搬送室並關閉閘閥21，且使區劃壁24上升來區隔為各處理容器20。 The action of the above embodiment will be described. For example, after the transport container C in which the wafer W is stored is carried into the loading cassette 11 of the vacuum processing apparatus, the wafer W is taken out from the transport container C, and is transported to the normal pressure transfer chamber 12 and the load lock chamber 13 to be transported to Vacuum transfer chamber 10. Next, the wafer W is transported to the film forming apparatus by the transport mechanism 16, and a SiN film is formed. Thereafter, the wafer W is taken out from the film forming apparatus by the transport mechanism 16 and transported to the plasma processing apparatus 2. In the plasma processing apparatus 2, for example, the wafer W is transferred by the cooperation of the lift pins of the respective mounts 3 and the transport mechanism 16, and is placed on each of the mounts 3. After the wafer W to be etched is carried in, the transfer device is retracted to the vacuum transfer chamber, the gate valve 21 is closed, and the partition wall 24 is raised to be partitioned into the respective processing containers 20.
接著，將各處理容器20內的壓力設定為例如13.3~133.3Pa，且分別以10~500sccm的流量來供應NF3氣體，以10~1000sccm的流量來供應O2氣體，且以5~130sccm的流量來供應H2氣體。又，係以50~1000sccm的流量來從中央側氣體噴出孔41A供應Ar氣體，且以50~1000sccm的流量來從周緣側氣體噴出孔41B供應氣體。藉此，則處理容器20中的電漿空間P中，離子捕集部51與介電窗26之間便會混合且充滿有NF3氣體、O2氣體及H2氣體。 Next, the pressure in each processing container 20 is set to, for example, 13.3 to 133.3 Pa, and NF 3 gas is supplied at a flow rate of 10 to 500 sccm, and O 2 gas is supplied at a flow rate of 10 to 1000 sccm, and is 5 to 130 sccm. Flow to supply H 2 gas. In addition, Ar gas is supplied from the center side gas discharge hole 41A at a flow rate of 50 to 1000 sccm, and gas is supplied from the peripheral side gas discharge hole 41B at a flow rate of 50 to 1000 sccm. Thereby, in the plasma space P in the processing container 20, the ion trapping portion 51 and the dielectric window 26 are mixed and filled with NF 3 gas, O 2 gas, and H 2 gas.
之後，從高頻電源29來對高頻天線27施加200~1200W的高頻電功率，則電漿空間P便會產生感應電場來將NF3氣體、O2氣體及H2氣體激發。藉此，如圖10所示，電漿空間P雖會生成NF3氣體、O2氣體及H2氣體的電漿100，但由於感應電場係形成為甜甜圈狀，故電漿空間P所生成之電漿100的密度分佈便會甜甜圈狀地成為電漿濃度變高之分佈。 Thereafter, when high-frequency electric power of 200 to 1200 W is applied to the high-frequency antenna 27 from the high-frequency power source 29, an induced electric field is generated in the plasma space P to excite the NF 3 gas, the O 2 gas, and the H 2 gas. Thereby, as shown in FIG. 10, although the plasma space P generates the plasma 100 of NF 3 gas, O 2 gas, and H 2 gas, since the induced electric field is formed into a doughnut shape, the plasma space P is The density distribution of the generated plasma 100 becomes a distribution in which the plasma concentration becomes high in a donut shape.
接著，電漿100雖會通過離子捕集部51的槽縫53、54，但由於電漿100中的離子會異向性地移動，故無法通過離子捕集部51的2個槽縫53、54而被捕捉。又，由於電漿中的自由基會等向性地移動，故會通過離子捕集部51而往噴淋板4側通過。於是，便會因電漿化後的NF3氣體、O2氣體及H2氣體通過離子捕集部51，而導致例如F、NF2、O及H等自由基的濃度變高。 Then, although the plasma 100 passes through the slits 53 and 54 of the ion trapping unit 51, the ions in the plasma 100 move anisotropically, so that the two slits 53 of the ion trapping unit 51 cannot be passed. 54 was caught. Further, since the radicals in the plasma move in an isotropic manner, they pass through the ion trapping unit 51 and pass through the shower plate 4 side. Then, the NF 3 gas, the O 2 gas, and the H 2 gas after the plasma pass through the ion trap unit 51, and the concentration of radicals such as F, NF 2 , O, and H becomes high.
然後，通過離子捕集部51之F、NF2、O及H等自由基會通過噴淋板4 的槽縫42而進入至處理空間S。電漿100會有在電漿空間P成為甜甜圈狀的濃度分佈之傾向。然後，自由基會因通過離子捕集部51及噴淋板4而某種程度地被整流，且密度均勻化而侵入至處理空間S內並被供應至晶圓W。然而，自由基的密度分佈要藉由通過離子捕集部51及噴淋板4來完全地均勻化非常困難，另外，會因處理空間S中之排氣而受到影響。 Then, radicals such as F, NF 2 , O, and H passing through the ion trap 51 pass through the slit 42 of the shower plate 4 and enter the processing space S. The plasma 100 tends to have a donut-like concentration distribution in the plasma space P. Then, the radicals are rectified to some extent by the ion trapping unit 51 and the shower plate 4, and the density is uniformized and intruded into the processing space S and supplied to the wafer W. However, it is extremely difficult to completely homogenize the density distribution of the radicals by the ion trapping portion 51 and the shower plate 4, and it is affected by the exhaust gas in the processing space S.
然後，調整從中央側氣體供應孔41A所供應之Ar氣體的流量與從周緣側氣體噴出孔41B所供應之Ar氣體的流量，來使供應至處理空間S中的中央側區域與周緣側區域中，希望將蝕刻量抑制為較低之側的區域之Ar氣體流量相對地較多。例如，欲在處理空間S中的周緣側區域將蝕刻量抑制為較低之情況，則使Ar氣體流量在晶圓W的周緣區域側較多，而在晶圓W的中央區域側較少。藉此，由於處理空間S中，F、NF2、O及H等自由基因Ar氣體而被稀釋的比率在晶圓W的周緣區域側區域處會較中央區域側要變高，故晶圓W的中心側處之自由基的濃度便會相對地上升。藉此，如圖11所示，晶圓W的中心側處之自由基的濃度與晶圓W的周緣側處之自由基的濃度便能一致。於是，處理空間S中的自由基101便會變得均勻，且晶圓W之蝕刻的面內均勻性會變得良好。由於係藉由從中央側氣體噴出孔41A及周緣側氣體噴出孔41B所噴出之Ar氣體，來調整將從第1氣體供應部所供應之氣體激發後的F、NF2、O及H等自由基在處理空間S內的分佈，故第2氣體(Ar氣體)便可說是能夠調整第1氣體的分佈之分佈調整用氣體。 Then, the flow rate of the Ar gas supplied from the center side gas supply hole 41A and the flow rate of the Ar gas supplied from the peripheral side gas discharge hole 41B are adjusted to be supplied to the central side region and the peripheral side region in the processing space S. It is desirable that the flow rate of the Ar gas in the region where the etching amount is suppressed to the lower side is relatively large. For example, when the etching amount is to be suppressed to be low in the peripheral side region in the processing space S, the Ar gas flow rate is large on the peripheral portion side of the wafer W, and is smaller on the central portion side of the wafer W. Thereby, since the ratio of the free gas Ar gas such as F, NF 2 , O, and H is diluted in the processing space S, the ratio is higher at the peripheral region side region of the wafer W than at the central region side, so the wafer W The concentration of free radicals at the center side will rise relatively. Thereby, as shown in FIG. 11, the concentration of the radical at the center side of the wafer W and the concentration of the radical at the peripheral side of the wafer W can be made uniform. Thus, the radical 101 in the processing space S becomes uniform, and the in-plane uniformity of the etching of the wafer W becomes good. By the Ar gas ejected from the center side gas discharge hole 41A and the peripheral side gas discharge hole 41B, the F, NF 2 , O, and H which are excited by the gas supplied from the first gas supply unit are adjusted. Since the second gas (Ar gas) can be said to be a distribution adjustment gas which can adjust the distribution of the first gas.
處理空間S中，SiN膜會因F、NF2、O及H等自由基而被蝕刻。之後，藉由搬送機構16來將晶圓W搬送至PHT裝置，並進行加熱處理。藉此，因蝕刻處理而產生的殘渣便會昇華而被去除。接著，將晶圓W搬送至真空氛圍的加載互鎖室13，再將加載互鎖室13切換為大氣氛圍後，藉由搬送機構15來將晶圓W取出，並在冷卻裝置14調整晶圓W的溫度後，再返回例如原來的搬送容器C。 In the processing space S, the SiN film is etched by radicals such as F, NF 2 , O, and H. Thereafter, the wafer W is transported to the PHT apparatus by the transport mechanism 16, and the heat treatment is performed. Thereby, the residue generated by the etching treatment is sublimated and removed. Next, the wafer W is transferred to the load lock chamber 13 in the vacuum atmosphere, and after the load lock chamber 13 is switched to the atmosphere, the wafer W is taken out by the transport mechanism 15 and the wafer is adjusted in the cooling device 14. After the temperature of W, return to the original transfer container C, for example.
依據上述實施型態，係在對處理容器20內所載置之晶圓W供應氣體來進行處理之電漿處理裝置中，藉由分隔部5來將處理容器20內區劃為會激發NF3氣體、O2氣體及H2氣體之電漿空間P，以及對晶圓W進行自由 基處理之處理空間S。然後，係構成為透過離子捕集部51所形成之槽縫53、54以及噴淋板4所形成之槽縫42來將電漿空間P中激發的NF3氣體、O2氣體及H2氣體作為自由基而供應至處理空間S，並從噴淋板4的下面來獨立於NF3氣體、O2氣體及H2氣體而供應Ar氣體。另外，在供應Ar氣體時，係設置有會從載置台3的中央區域側來供應Ar氣體之中央側氣體供應部，以及從載置台3的周緣區域側來供應Ar氣體之周緣側氣體供應部。於是，由於可在載置台3的中心側與載置台3的周緣側獨立地調整Ar氣體的供應量，從而可調整被供應至晶圓W之自由基的面內分佈，因此便可調整晶圓W之電漿處理的面內分佈。 According to the above embodiment, in the plasma processing apparatus which supplies the gas to the wafer W placed in the processing container 20 for processing, the processing container 20 is partitioned by the partitioning portion 5 to excite the NF 3 gas. a plasma space P of O 2 gas and H 2 gas, and a processing space S for radical processing of the wafer W. Then, the slits 53 and 54 formed by the ion trapping portion 51 and the slit 42 formed by the shower plate 4 are configured to excite the NF 3 gas, the O 2 gas, and the H 2 gas in the plasma space P. The radicals are supplied to the processing space S, and Ar gas is supplied from the lower surface of the shower plate 4 independently of the NF 3 gas, the O 2 gas, and the H 2 gas. In addition, when the Ar gas is supplied, the center side gas supply unit that supplies the Ar gas from the central portion side of the mounting table 3 and the peripheral side gas supply unit that supplies the Ar gas from the peripheral region side of the mounting table 3 are provided. . Therefore, since the supply amount of the Ar gas can be adjusted independently of the center side of the mounting table 3 and the peripheral side of the mounting table 3, the in-plane distribution of the radicals supplied to the wafer W can be adjusted, so that the wafer can be adjusted. The in-plane distribution of the plasma treatment of W.
又，NF3氣體、O2氣體及H2氣體的自由基濃度會依例如處理容器20內之NF3氣體、O2氣體及H2氣體的供應位置等，而有在處理空間S中的中央區域側處變高之情況。若欲將上述般之晶圓W中心側的蝕刻量抑制為較低之情況，則係將從中央側氣體供應部所供應之Ar氣體量調整為相對地較多，藉此便可相對於晶圓W周緣側的蝕刻量，而將晶圓W中心側的蝕刻量抑制為相對較低。 And, NF 3 gas, O 2 gas and H 2 gas concentration of radicals will depend, for example, the processing container 20 within the NF 3 gas, O 2 gas and H 2 gas supply position and the like, while in the central processing space S The situation at the side of the area becomes higher. When the amount of etching on the center side of the wafer W is suppressed to be low, the amount of Ar gas supplied from the center side gas supply unit is relatively large, thereby being relatively relative to the crystal. The etching amount on the peripheral side of the circle W suppresses the etching amount on the center side of the wafer W to be relatively low.
再者，由於可以板狀體40來構成噴淋板4，故厚度會變薄，縱使和離子捕集部51加以組合來使用的情況，仍可避免裝置的大型化。 Further, since the shower plate 4 can be configured by the plate-like body 40, the thickness is reduced, and even when the ion trapping unit 51 is used in combination, the size of the apparatus can be prevented.
另外，亦可為會將例如NF3氣體等會使其電漿化的處理氣體供應至電漿空間P側，而從噴淋板4的下面不使NH3氣體等電漿化來供應至晶圓W之電漿處理裝置。作為上述般的範例，舉例有例如藉由COR(Chemical Oxide Removal)法來去除SiO2膜之電漿處理裝置。在此電漿處理裝置中，會生成作為蝕刻劑之NH4F並使其吸附在晶圓W表面，來使NH4F與SiO2反應而生成AFS(氟矽酸銨)，但若將NH3氣體電漿化便不會生成NH4F。於是，便對電漿空間P供應NF3氣體來電漿化，且不使NH3氣體通過電漿空間P，而是從噴淋板4的下面來供應。由於上述般的範例中，亦係藉由調整從中央側氣體噴出孔41A所供應之NH3氣體的供應量與從周緣側氣體噴出孔41B所供應之之NH3氣體的供應量來調整NH3氣體的面內分佈，從而便可調整晶圓W表面處之NH4F供應量的面內分佈，故可獲得相同的效果。 In addition, it is also possible to supply a processing gas such as NF 3 gas to be plasma-treated to the plasma space P side, and to supply plasma to the crystal from the lower surface of the shower plate 4 without causing plasma of NH 3 gas or the like. Round W plasma processing unit. As a general example of the above, for example, a plasma processing apparatus for removing an SiO 2 film by a COR (Chemical Oxide Removal) method is exemplified. In this plasma processing apparatus, NH 4 F as an etchant is generated and adsorbed on the surface of the wafer W to react NH 4 F with SiO 2 to form AFS (ammonium fluoroantimonate), but if NH is to be used 3 Gas plasma will not produce NH 4 F. Then, the NF 3 gas is supplied to the plasma space P to be slurryed, and the NH 3 gas is not supplied through the plasma space P, but is supplied from the lower side of the shower plate 4. Since the aforesaid examples, also be affected by adjusting the discharge aperture 41A from the center side of the gas supply of NH supply 3 gas to adjust the supply amount of the gas from the NH 41B supplied peripheral side of the gas discharge holes of the 3 NH 3 The in-plane distribution of the gas allows the in-plane distribution of the NH 4 F supply at the surface of the wafer W to be adjusted, so that the same effect can be obtained.
又，若電漿衝撞到離子捕集部51，便會有熱蓄積在離子捕集部51之情 況。通過離子捕集部51之自由基等會因熱分佈而有其分佈發生偏倚的情況，便會有處理空間S之自由基的分佈因離子捕集部51的熱分佈而受到影響之情況。上述實施型態中，係以鋁板來構成噴淋板4。藉由於離子捕集部51的下方設置有鋁板等隔熱組件，便可阻隔離子捕集部51的熱朝處理空間S輻射。於是，便可抑制處理空間S的自由基分佈因離子捕集部51的熱影響而發生偏倚，從而便可精確度良好地來調整處理空間S之自由基的濃度分佈。 Further, when the plasma collides with the ion trap portion 51, heat is accumulated in the ion trap portion 51. When the radicals or the like of the ion trapping unit 51 are biased due to the heat distribution, the distribution of the radicals in the processing space S may be affected by the heat distribution of the ion trapping unit 51. In the above embodiment, the shower plate 4 is formed of an aluminum plate. By providing a heat insulating member such as an aluminum plate under the ion trap portion 51, the heat of the spacer trap portion 51 can be prevented from being radiated toward the processing space S. Therefore, it is possible to suppress the radical distribution of the processing space S from being biased by the thermal influence of the ion trapping portion 51, and the concentration distribution of the radicals in the processing space S can be adjusted with high precision.
再者，藉由以隔熱組件來構成設置有凸緣400之噴淋板4，且使凸緣400接觸於處理容器20般來加以設置，由於噴淋板4的熱會透過處理容器20而擴散，故會提高隔熱效果。再者，藉由於噴淋板4的內部設置有會供應第2氣體之中央側氣體供應道44及周緣側氣體供應道46，且使氣體流通於中央側氣體供應道44及周緣側氣體供應道46，由於可促進噴淋板4的熱擴散，故效果會變大。又，離子捕集部51的熱分佈亦會依電漿分佈而不同，且往處理空間S側輻射之熱的分佈亦會有所不同。於是，藉由構成為可分別獨立地將氣體供應至噴淋板4之中心側內部所設置之中央側氣體供應道44與周緣側內部所設置之周緣側氣體供應道46，由於可配合離子捕集部51的熱分佈來改變噴淋板4中使氣體流通的區域，故可更有效率地使噴淋板4的熱擴散。 Further, by arranging the shower plate 4 provided with the flange 400 with a heat insulating member, and providing the flange 400 in contact with the processing container 20, heat of the shower plate 4 passes through the processing container 20. Diffusion, it will improve the insulation effect. Further, the center side gas supply passage 44 and the peripheral side gas supply passage 46 that supply the second gas are disposed inside the shower plate 4, and the gas is circulated to the central side gas supply passage 44 and the peripheral side gas supply passage. 46, since the heat diffusion of the shower plate 4 can be promoted, the effect becomes large. Further, the heat distribution of the ion trapping portion 51 also differs depending on the plasma distribution, and the distribution of heat radiated to the processing space S side also differs. Therefore, the central side gas supply path 44 provided inside the center side of the shower plate 4 and the peripheral side gas supply path 46 provided inside the peripheral side can be independently supplied by the gas, and the ion trapping can be performed. The heat distribution of the collecting portion 51 changes the region in the shower plate 4 through which the gas flows, so that the heat of the shower plate 4 can be more efficiently diffused.
另一方面，如圖6的說明，由於周緣側氣體導入道405係連接於在長度方向上將氣體擴散流道45二等分之位置，因此便可在氣體擴散流道45的左右方向上高均勻性地使氣體流量分散。如此般地由於因氣體擴散流道45而被分散之氣體會流入至各周緣側氣體供應道46，故可從周緣側氣體供應道46的下游側所設置之各周緣側氣體噴出孔41來高均勻性地噴出氣體。 On the other hand, as shown in FIG. 6, the peripheral side gas introduction passage 405 is connected to the position where the gas diffusion flow passage 45 is equally divided in the longitudinal direction, so that it can be high in the left-right direction of the gas diffusion flow passage 45. The gas flow rate is evenly dispersed. In this way, since the gas dispersed by the gas diffusion flow path 45 flows into the peripheral side gas supply passages 46, the peripheral side gas discharge holes 41 provided on the downstream side of the peripheral side gas supply passage 46 can be made high. The gas is ejected uniformly.
此處，在周緣側氣體導入道405中，氣體會朝向左右方向的其中之一流動。於是，相較於將該周緣側氣體導入道405的下游端直接連接於氣體擴散流道45之長度方向的中央部，亦即不透過前述連接流道404來將氣體導入至氣體擴散流道45之構成，由於會將氣體供應至該擴散流道45，且使氣體流通於氣體擴散流道45而整流於圓弧的法線方向後，再導入至氣體擴 散流道45之構成(已藉由圖6來做說明)會在氣體擴散流道45的左右方向上，可更高均勻性地使氣體擴散，故較佳。 Here, in the peripheral side gas introduction passage 405, the gas flows toward one of the left and right directions. Then, the gas is introduced into the gas diffusion flow path 45 in a central portion in the longitudinal direction of the gas diffusion flow path 45, that is, without passing through the connection flow path 404, as compared with the downstream end of the peripheral side gas introduction passage 405. The configuration is such that the gas is supplied to the diffusion flow path 45, and the gas is circulated to the gas diffusion flow path 45 to be rectified in the normal direction of the circular arc, and then introduced into the gas diffusion flow path 45 (already by As shown in Fig. 6, it is preferable that the gas can be diffused more uniformly in the left-right direction of the gas diffusion flow path 45.
又，為了消除連接流道404中之氣體流動的偏倚來使該氣體的直進性良好，以提高氣體擴散流道45中之氣體分佈的均勻性，較佳宜使連接流道404的寬度d較周緣側氣體導入道405的寬度D要細。又，為了如此般地消除連接流道404中之氣體流動的偏倚，連接流道404較佳為其長度L相對於寬度d，而如前述般地為2倍以上(L≧2d)。 Further, in order to eliminate the bias of the gas flow in the connecting flow path 404 to make the straightness of the gas good, and to improve the uniformity of the gas distribution in the gas diffusion flow path 45, it is preferable to make the width d of the connecting flow path 404 larger. The width D of the peripheral side gas introduction passage 405 is thin. Further, in order to eliminate the bias of the gas flow in the connection flow path 404 in this manner, the connection flow path 404 preferably has a length L with respect to the width d, and is twice or more (L ≧ 2d) as described above.
又，亦可為使周緣側氣體導入道405中的下游側端部相對於上游側而膨大之構造，來使流入至連接流道404之氣體暫時滯留在氣體導入道405的下游側端部後再流入至連接流道404。藉由如此般地加以構成，由於可使流速變緩之氣體流入至連接流道404，故連接流道404中之氣體的直進性會變得良好。 In addition, the gas flowing into the connection flow path 404 may be temporarily retained in the downstream end of the gas introduction passage 405 after the downstream end portion of the peripheral side gas introduction passage 405 is expanded toward the upstream side. Then, it flows into the connection flow path 404. With such a configuration, since the gas having a reduced flow velocity can flow into the connection flow path 404, the straightness of the gas in the connection flow path 404 becomes good.
又，本發明亦可構成為可在複數種氣體間切換從構成第2氣體供應部之中央側氣體噴出口41A及周緣側氣體噴出口41B所供應之氣體。例如圖12所示，係構成為可分別獨立地朝構成第2氣體供應部之中心側氣體導入埠402及周緣側氣體導入埠403供應Ar氣體與氧化膜去除用氣體(即氟化氫(HF)氣體)。將可如此般地供應Ar氣體及HF氣體之裝置作為基板處理裝置1A。除了可朝各埠402、403供應Ar氣體及HF氣體以外，此基板處理裝置1A係構成為與電漿處理裝置2相同。此外，圖12中的符號480為HF氣體供應源。又，符號V7、V8為閥體，符號M7、M8為流量調整部。 Moreover, the present invention may be configured to switch the gas supplied from the center side gas discharge port 41A and the peripheral side gas discharge port 41B constituting the second gas supply unit between the plurality of types of gases. For example, as shown in FIG. 12, the Ar gas and the oxide film removal gas (that is, hydrogen fluoride (HF) gas are supplied to the center side gas introduction port 402 and the peripheral side gas introduction port 403 which constitute the second gas supply unit, respectively. ). A device that can supply Ar gas and HF gas in this manner is used as the substrate processing apparatus 1A. The substrate processing apparatus 1A is configured similarly to the plasma processing apparatus 2 except that the Ar gas and the HF gas can be supplied to the respective crucibles 402 and 403. Further, reference numeral 480 in Fig. 12 is an HF gas supply source. Further, the symbols V7 and V8 are valve bodies, and the symbols M7 and M8 are flow rate adjustment units.
圖13係顯示在基板處理裝置1A中所處理之被處理基板，即晶圓W。該晶圓W係在形成具有例如3D NAND構造的元件之際被使用，且交互地分別層積有複數層矽氮化膜(SiN膜)200與矽氧化膜(SiO2膜)201，且貫穿該等膜般地形成有記憶孔202。在基板處理裝置1A的處理前，構成記憶孔202的側壁之SiN膜200的表面會薄薄地形成有自然氧化膜203。預先說明該基板處理裝置1A的處理概略，在上述自然氧化膜203的去除後會蝕刻構成記憶孔202的側壁之SiN膜200的表層。但在此蝕刻處理後，會有於SiN膜200的表面形成有氧化膜之情況。若如此般地形成有氧化膜，便會有無法在後工序中正常地進行將膜朝記憶孔202內埋入之虞。因此，該基板處理裝 置1A係在蝕刻後才去除氧化膜，來防止上述膜的正常埋入受到阻礙。 Fig. 13 shows a substrate to be processed which is processed in the substrate processing apparatus 1A, that is, a wafer W. The wafer W is used to form an element having, for example, a 3D NAND structure, and a plurality of layers of a tantalum nitride film (SiN film) 200 and a tantalum oxide film (SiO 2 film) 201 are alternately laminated, respectively. Memory holes 202 are formed in the same manner as the film. Before the processing of the substrate processing apparatus 1A, the surface of the SiN film 200 constituting the side wall of the memory hole 202 is thinly formed with the natural oxide film 203. The outline of the processing of the substrate processing apparatus 1A will be described in advance, and after the removal of the natural oxide film 203, the surface layer of the SiN film 200 constituting the sidewall of the memory hole 202 is etched. However, after the etching treatment, an oxide film may be formed on the surface of the SiN film 200. If an oxide film is formed in this manner, the film may not be buried in the memory hole 202 normally in the subsequent process. Therefore, the substrate processing apparatus 1A removes the oxide film after etching to prevent the normal embedding of the film from being hindered.
針對使用該基板處理裝置1A之基板處理一例來更加詳細地說明。首先，將圖13所示之晶圓W載置於基板處理裝置1A內後，便進行記憶孔202側面之自然氧化膜203的除去處理。此情況下，係在將處理容器2內真空排氣且關閉高頻電源29之狀態下，如圖14所示般地從噴淋板4所形成之中央側氣體噴出孔41A及周緣側氣體噴出孔41B來對處理空間S供應HF氣體。此外，圖14、15中，係以白色來表示打開的閥體，而以黑色來表示關閉的閥體。此時，被供應至會將氣體導入至各中央側氣體噴出孔41A之中央側氣體導入埠402的HF氣體流量，與被供應至會將氣體導入至周緣側氣體噴出孔41B之2個周緣側氣體導入埠403的HF氣體流量可為例如相同。藉由如上述般地被供應至處理空間S之HF氣體的作用，來去除形成於記憶孔202內面的自然氧化膜203。 An example of the substrate processing using the substrate processing apparatus 1A will be described in more detail. First, after the wafer W shown in FIG. 13 is placed in the substrate processing apparatus 1A, the natural oxide film 203 on the side surface of the memory hole 202 is removed. In this case, in the state where the processing container 2 is evacuated by vacuum and the high-frequency power source 29 is turned off, the center side gas discharge hole 41A and the peripheral side gas are formed from the shower plate 4 as shown in FIG. The hole 41B supplies HF gas to the processing space S. In addition, in FIGS. 14 and 15, the open valve body is shown in white, and the closed valve body is shown in black. At this time, the flow rate of the HF gas supplied to the center side gas introduction port 402 that introduces the gas to each of the center side gas discharge holes 41A is supplied to the two peripheral sides of the peripheral side gas discharge hole 41B. The HF gas flow rate of the gas introduction enthalpy 403 may be, for example, the same. The natural oxide film 203 formed on the inner surface of the memory hole 202 is removed by the action of the HF gas supplied to the processing space S as described above.
接著，如圖15所示，從H2氣體供應源37來對電漿空間P供應用以將SiN膜204改質的改質氣體(即H2氣體)，並停止朝處理空間S供應HF氣體。進一步地，打開高頻電源29來激發電漿。藉此，便會在電漿空間P將H2氣體活性化，H自由基會被供應至晶圓W。SiN膜200中之SiN的鍵結會因此H自由基的作用而被切斷，來使SiN膜200容易被蝕刻(SiN膜200被改質)。 Next, as shown in FIG. 15, the reforming gas (i.e., H 2 gas) for reforming the SiN film 204 is supplied to the plasma space P from the H 2 gas supply source 37, and the supply of the HF gas toward the processing space S is stopped. . Further, the high frequency power source 29 is turned on to excite the plasma. Thereby, the H 2 gas is activated in the plasma space P, and the H radicals are supplied to the wafer W. The bonding of SiN in the SiN film 200 is cut by the action of the H radicals, so that the SiN film 200 is easily etched (the SiN film 200 is modified).
之後，如圖10、11的說明，會進行SiN膜200的蝕刻處理來作為電漿處理裝置2的處理。藉此，形成各個記憶孔202的側壁之SiN膜200便會在晶圓W的面內高均勻性地被蝕刻。 Thereafter, as illustrated in FIGS. 10 and 11, the etching treatment of the SiN film 200 is performed as the processing of the plasma processing apparatus 2. Thereby, the SiN film 200 forming the sidewalls of the respective memory holes 202 is highly uniformly etched in the plane of the wafer W.
然後，以數nm的厚度來蝕刻露出在記憶孔202內的SiN膜200後，便結束蝕刻。該SiN膜200的蝕刻係為了使埋入在各記憶孔202之膜的埋入性良好而進行。又，在蝕刻結束時，構成記憶孔202的側壁之SiN膜200的表面會因例如蝕刻中所使用之O2氣體的作用而如圖16所示般地形成有氧化膜204。 Then, the SiN film 200 exposed in the memory hole 202 is etched with a thickness of several nm, and the etching is terminated. The etching of the SiN film 200 is performed in order to improve the embedding property of the film buried in each of the memory holes 202. Further, at the end of the etching, the surface of the SiN film 200 constituting the side wall of the memory hole 202 is formed with an oxide film 204 as shown in FIG. 16 by, for example, the action of O 2 gas used for etching.
於是，作為後處理，係與自然氧化膜203的除去處理工序同樣地如圖14所示，在停止朝電漿空間P供應各氣體且關閉高頻電源29之狀態下，從噴淋板4的氣體噴出孔41A、41B來供應HF氣體。藉此，便可去除SiN膜 200的表面所成膜之氧化膜204。 Then, as in the post-treatment, as shown in FIG. 14, as in the process of removing the natural oxide film 203, the state in which the gas is supplied to the plasma space P and the high-frequency power source 29 is turned off is used from the shower plate 4. The gas ejection holes 41A, 41B supply HF gas. Thereby, the oxide film 204 formed on the surface of the SiN film 200 can be removed.
在氧化膜204的去除後，例如係如前述實施型態所說明般，進行晶圓W的加熱處理來去除附著在晶圓W的殘渣。此外，晶圓W的加熱處理可如前述般地搬送至PHT裝置來進行，或亦可在基板處理裝置1A的載置台3設置有加熱部而以基板處理裝置1A來進行。 After the removal of the oxide film 204, for example, as described in the above embodiment, the wafer W is subjected to a heat treatment to remove the residue adhering to the wafer W. Further, the heat treatment of the wafer W may be carried out to the PHT apparatus as described above, or may be performed by the substrate processing apparatus 1A by providing the heating unit on the mounting table 3 of the substrate processing apparatus 1A.
依據此基板處理裝置1A，便可以高均勻性來蝕刻晶圓W面內的SiN膜200。又，由於係在蝕刻後才去除SiN膜200表面的氧化膜204，故可防止阻礙到將膜朝記憶孔202埋入。 According to this substrate processing apparatus 1A, the SiN film 200 in the plane of the wafer W can be etched with high uniformity. Further, since the oxide film 204 on the surface of the SiN film 200 is removed after the etching, it is possible to prevent the film from being buried in the memory hole 202.
再者，依據此基板處理裝置1A，便可在相同的處理容器20內來進行自然氧化膜203的除去處理、切斷SiN的鍵結來使蝕刻變得容易之前處理、以及蝕刻處理後之氧化膜204的除去處理之一連串的基板處理。於是，當進行上述一連串的基板處理時，由於不需在複數處理容器20間進行晶圓W的搬送，故可謀求產能的提升。此外，亦可以基板處理裝置1A來僅進行自然氧化膜203的除去處理及蝕刻，或是以基板處理裝置1A來僅進行蝕刻處理及氧化膜204的除去處理。 Further, according to the substrate processing apparatus 1A, the natural oxide film 203 can be removed in the same processing container 20, the SiN bond can be cut, the etching can be facilitated, and the etching can be performed after the etching treatment. A series of substrate treatments are performed on the removal process of the film 204. Therefore, when the above-described series of substrate processing is performed, since the transfer of the wafer W is not required between the plurality of processing containers 20, the productivity can be improved. In addition, the substrate processing apparatus 1A may perform only the removal processing and etching of the natural oxide film 203, or the substrate processing apparatus 1A may perform only the etching processing and the removal processing of the oxide film 204.
又，蝕刻處理之前處理的自然氧化膜203除去處理，或蝕刻處理之後處理的氧化膜204除去處理亦可構成為會連同HF氣體一起供應NH3氣體。再者，氣體供應口34及用以將氣體供應至氣體供應口34之氣體供應管35、各閥體V1~V3、流量調整部M1~M3及各氣體供應源36~38係構成第1氣體供應部，而中央側氣體噴出口41A及周緣側氣體噴出口41B，以及用以將氣體供應至該等中央側氣體噴出口41A及周緣側氣體噴出口41B之各閥體V4、V5、流量調整部M4、M5及Ar氣體供應源48係構成第2氣體供應部，HF氣體及NH3氣體亦可從第1氣體供應部及第2氣體供應部的任一者來供應。又，改質氣體亦可為NH3或H2O。 Further, the natural oxide film 203 removal treatment processed before the etching treatment or the oxide film 204 removal treatment after the etching treatment may be configured to supply the NH 3 gas together with the HF gas. Further, the gas supply port 34, the gas supply pipe 35 for supplying the gas to the gas supply port 34, the valve bodies V1 to V3, the flow rate adjusting portions M1 to M3, and the respective gas supply sources 36 to 38 constitute the first gas. The supply unit, the central side gas discharge port 41A and the peripheral side gas discharge port 41B, and the valve bodies V4 and V5 for supplying gas to the center side gas discharge port 41A and the peripheral side gas discharge port 41B, and the flow rate adjustment The parts M4, M5, and the Ar gas supply source 48 constitute a second gas supply unit, and the HF gas and the NH 3 gas may be supplied from any of the first gas supply unit and the second gas supply unit. Further, the modified gas may be NH 3 or H 2 O.
[第2實施型態] [Second embodiment]
針對第2實施型態相關之基板處理裝置來加以說明。此基板處理裝置除了構成分隔部5的一部分之噴淋板8的構成與圖2所示之電漿處理裝置2不同以外，其他皆為相同的構成。有關第2實施型態相關之基板處理裝置的噴淋板8，參閱圖17~圖20來加以說明。此外，為了避免記載變得繁雜， 便將貫穿噴淋板8之槽縫42以黑線來表示。圖17、圖18係分別顯示從上面側及下面側來觀看噴淋板8之平面圖。又，圖19、圖20係分別為圖17、圖18中所示之I線及II線之噴淋板8的縱剖視圖。 The substrate processing apparatus according to the second embodiment will be described. This substrate processing apparatus has the same configuration except that the configuration of the shower plate 8 constituting a part of the partition portion 5 is different from that of the plasma processing apparatus 2 shown in Fig. 2 . The shower plate 8 of the substrate processing apparatus according to the second embodiment will be described with reference to Figs. 17 to 20 . Further, in order to avoid cumbersome description, the slit 42 penetrating the shower plate 8 is indicated by a black line. 17 and 18 are plan views showing the shower plate 8 viewed from the upper side and the lower side, respectively. 19 and 20 are longitudinal cross-sectional views of the shower plate 8 of the I line and the II line shown in Figs. 17 and 18, respectively.
如圖17、圖19及圖20所示，在噴淋板8的上面側(電漿空間P側)處，噴淋板8的前方及後方處之凸緣400的內部係形成有會使從各個噴淋板8的下面周緣側噴出的Ar氣體往左右方向擴散之周緣側氣體擴散流道91。又，如圖18、圖19及圖20所示，在噴淋板8的下面側處，噴淋板8的前方及後方處之凸緣400的內部係形成有會使從各個噴淋板8的下面中心部側噴出的Ar氣體往左右方向擴散之中央側氣體擴散流道92。又，噴淋板8的內部係於左右方向並排地形成有氣體流道93，該氣體流道93係從前方側至後方側貫穿噴淋板8，且係以各端部會位在較凸緣400內之中央側氣體擴散流道92所形成的高度位置要上方，且為周緣側氣體擴散流道91的下方之方式來加以形成。此外，圖17、18中，雖係顯示周緣側氣體擴散流道91的頂面及中央側氣體擴散流道92的下面為開放狀態，但如圖19、20所示，周緣側氣體擴散流道91的頂面及中央側氣體擴散流道92的下面皆係藉由板狀組件而被封閉。 As shown in Fig. 17, Fig. 19 and Fig. 20, at the upper surface side (the plasma space P side) of the shower plate 8, the inside of the flange 400 at the front and the rear of the shower plate 8 is formed such that The peripheral gas side gas diffusion flow path 91 in which the Ar gas discharged from the lower peripheral edge side of each of the shower plates 8 is diffused in the left-right direction. Further, as shown in Figs. 18, 19, and 20, at the lower surface side of the shower plate 8, the inside of the flange 400 at the front and the rear of the shower plate 8 is formed so as to be formed from the respective shower plates 8. The central gas diffusion channel 92 in which the Ar gas ejected from the lower central portion side is diffused in the left-right direction. Further, inside the shower plate 8, a gas flow path 93 is formed in parallel in the left-right direction, and the gas flow path 93 penetrates the shower plate 8 from the front side to the rear side, and the end portions are positioned to be convex. The central side gas diffusion flow path 92 in the rim 400 is formed above the height position and below the peripheral side gas diffusion flow path 91. In addition, in FIGS. 17 and 18, the top surface of the peripheral side gas diffusion flow path 91 and the lower surface of the center side gas diffusion flow path 92 are open, but as shown in FIGS. 19 and 20, the peripheral side gas diffusion flow path is shown. The top surface of 91 and the lower surface of the central side gas diffusion flow path 92 are closed by a plate-like assembly.
左右並排之氣體流道93中靠內的流道(將中央區域橫剖之氣體流道93)中，係交互地配列有於其前後端部的上面側設有連通道96且連接於周緣側氣體擴散流道91之氣體流道93a，以及，於其前後端部的下面側設有連通道97且連接於中央側氣體擴散流道92之氣體流道93b。又，氣體流道93中靠外的流道(未將中央區域橫剖之氣體流道93)皆僅會成為於其前後端部的上面側設有連通道96且連接於周緣側氣體擴散流道91之氣體流道93a。 The inner flow passage 93 of the left and right side of the gas flow passage 93 (the gas flow passage 93 cross-sectioned in the central region) is alternately arranged with the connecting passage 96 on the upper surface side of the front and rear end portions thereof and connected to the peripheral side The gas flow path 93a of the gas diffusion flow path 91 and the gas flow path 93b connected to the central side gas diffusion flow path 92 are provided on the lower surface side of the front and rear end portions thereof. Further, the outer flow path of the gas flow path 93 (the gas flow path 93 which is not cross-sectionally cut in the central portion) is provided only on the upper surface side of the front and rear end portions thereof with the connecting passage 96 and connected to the peripheral side gas diffusion flow. The gas flow path 93a of the road 91.
再者，如圖18、圖19所示，連接於周緣側氣體擴散流道91之氣體流道93a係於噴淋板8下面的周緣側區域形成有噴出孔95。又，如圖18、圖20所示，連接於中央側氣體擴散流道92之氣體流道93b係於噴淋板8下面的中央區域形成有複數噴出孔94。 Further, as shown in FIGS. 18 and 19, the gas flow path 93a connected to the peripheral side gas diffusion flow path 91 is formed with a discharge hole 95 in a peripheral side region of the lower surface of the shower plate 8. Further, as shown in Figs. 18 and 20, the gas flow path 93b connected to the center side gas diffusion flow path 92 is formed with a plurality of discharge holes 94 in the central portion of the lower surface of the shower plate 8.
然後，各周緣側氣體擴散流道91係與圖6所示之噴淋板4中的周緣側氣體擴散流道45同樣地透過連接流道404及周緣側氣體導入道405而連接於周緣側氣體供應埠403。再者，周緣側氣體供應埠403係連接有例如圖6 所示之周緣側氣體供應管49，而構成為會將Ar氣體透過周緣側氣體擴散流道91來供應至氣體流道93a。又，各中央側氣體擴散流道92亦係透過連接流道406、中央側氣體導入道407而連接於中央側氣體導入埠402。連接流道406係與連接流道404同樣地設置為會與中央側氣體導入道407及中央側氣體擴散流道92呈正交，並且，連接流道406的流道寬度係較中央側氣體導入道407的流道寬度要窄，連接流道406的長度為連接流道406之流道寬度的2倍以上長度。 In the same manner as the peripheral side gas diffusion passage 45 in the shower plate 4 shown in FIG. 6, the peripheral side gas diffusion passages 91 are connected to the peripheral side gas through the connection flow path 404 and the peripheral side gas introduction passage 405. Supply 埠403. Further, the peripheral side gas supply port 403 is connected to, for example, the peripheral side gas supply pipe 49 shown in FIG. 6, and is configured to supply Ar gas to the gas flow path 93a through the peripheral side gas diffusion flow path 91. Further, each of the center side gas diffusion passages 92 is also connected to the center side gas introduction port 402 through the connection flow path 406 and the center side gas introduction path 407. The connection flow path 406 is disposed to be orthogonal to the center side gas introduction path 407 and the center side gas diffusion flow path 92 in the same manner as the connection flow path 404, and the flow path width of the connection flow path 406 is higher than that of the central side gas introduction. The channel width of the channel 407 is narrow, and the length of the connection channel 406 is twice or more the width of the channel connecting the channel 406.
中央側氣體導入埠402係連接有例如圖6所示之中央側氣體供應管47，而構成為會將Ar氣體透過中央側氣體擴散流道92來供應至氣體流道93b。再者，噴淋板8中相鄰之氣體流道93(93a、93b)的間隙係形成有用以將電漿空間P側所激發的第1氣體(例如自由基)供應至處理空間S側之槽縫42。 The center side gas introduction port 402 is connected to, for example, the center side gas supply pipe 47 shown in FIG. 6, and is configured to supply Ar gas to the gas flow path 93b through the center side gas diffusion flow path 92. Further, the gap between the adjacent gas flow passages 93 (93a, 93b) in the shower plate 8 is formed to supply the first gas (for example, a radical) excited by the plasma space P side to the processing space S side. Slot 42.
此般的噴淋板8中，與第1實施型態所示之噴淋板4同樣地，從周緣側氣體供應管49所供應之氣體會藉由周緣側氣體擴散流道91而在氣體流道93a的配列方向上流量變得均勻般地擴散後，才會被供應至各氣體流道93a。再者，從中央側氣體供應管47所供應之氣體會藉由中央側氣體擴散流道92而在氣體流道93b的配列方向上流量變得均勻般地擴散後，才會被供應至各氣體流道93b。於是，不僅是被供應至噴淋板8的周緣區域之氣體，且被供應至中央區域之氣體的流量亦會在氣體流道93b的配列方向(左右方向)上變得均勻。 In the shower plate 8, the gas supplied from the peripheral side gas supply pipe 49 is in the gas flow by the peripheral side gas diffusion flow path 91, similarly to the shower plate 4 shown in the first embodiment. The flow rate in the arrangement direction of the track 93a becomes uniformly diffused, and is supplied to each gas flow path 93a. Further, the gas supplied from the center side gas supply pipe 47 is uniformly diffused in the flow direction of the gas flow path 93b by the center side gas diffusion flow path 92, and is supplied to each gas. Flow path 93b. Then, not only the gas supplied to the peripheral region of the shower plate 8, but also the flow rate of the gas supplied to the central portion becomes uniform in the arrangement direction (left-right direction) of the gas flow path 93b.
於是，便可分別將從噴淋板8的中央區域側所供應之第2氣體，以及從周緣側所供應之第2氣體均勻地噴出。於是，便可分別使被供應至晶圓W的中心側及周緣側之第2氣體的面內分佈變得均勻，在調整被供應至晶圓W之第2氣體的面內均勻性時，可以更好的精確度來做調整。 Then, the second gas supplied from the central region side of the shower plate 8 and the second gas supplied from the peripheral side can be uniformly discharged. Therefore, the in-plane distribution of the second gas supplied to the center side and the peripheral side of the wafer W can be made uniform, and when the in-plane uniformity of the second gas supplied to the wafer W is adjusted, Better adjustments to make adjustments.
[第3實施型態] [Third embodiment]
又，本發明亦可取代將氣體電漿化之電漿空間，而為具備有將氣體預混合的擴散空間之基板處理裝置。以下就將例如NF3氣體、Ar氣體、O2氣體、H2氣體等氣體預混合後才供應至處理空間，且直接將例如HF氣體或NH3氣體等後混合用的氣體供應至處理空間而進行處理之基板處理裝置來加以說明。對晶圓W進行氣體處理之氣體處理部雖亦可與前述電漿處理裝 置的處理容器20同樣為連結2個之構成，但此處係針對具備有1個處理容器210之範例來加以說明。如圖21所示，具有圓筒形的處理容器210，且於處理容器210的頂板部分設置有噴淋頭7所構成。此外，圖中的符號21、22分別為閘閥及搬送口，符號61、62及6分別為與電漿處理裝置2同樣地構成之排氣口、排氣管及真空排氣部。再者，處理容器內係與電漿處理裝置2同樣地設置有載置台3。 Further, the present invention may be a substrate processing apparatus provided with a diffusion space for premixing gas, instead of a plasma space for plasma-gasizing. Hereinafter, a gas such as NF 3 gas, Ar gas, O 2 gas, or H 2 gas is premixed before being supplied to the processing space, and a gas for post-mixing such as HF gas or NH 3 gas is directly supplied to the processing space. The substrate processing apparatus that performs the processing will be described. The gas processing unit that performs the gas treatment on the wafer W may be configured in the same manner as the processing container 20 of the plasma processing apparatus. However, an example in which one processing container 210 is provided will be described. As shown in FIG. 21, a cylindrical processing container 210 is provided, and a shower head 7 is provided in a top plate portion of the processing container 210. In addition, reference numerals 21 and 22 in the figure are a gate valve and a transfer port, respectively, and reference numerals 61, 62, and 6 are an exhaust port, an exhaust pipe, and a vacuum exhaust unit which are configured similarly to the plasma processing apparatus 2, respectively. Further, in the processing container, the mounting table 3 is provided in the same manner as the plasma processing apparatus 2.
針對噴淋頭7的構成，參閱圖21~圖23來加以說明。噴淋頭7係具備有構成會讓第1氣體擴散的擴散空間D之擴散組件71，以及會將氣體噴出至處理空間S之噴淋組件72，如圖21所示，從載置台3側係依序重疊地形成有噴淋組件72與擴散組件71。擴散組件71的底板71a及噴淋組件72係相當於會區劃為進行晶圓W的處理之處理空間S，以及讓氣體擴散的擴散空間D之分隔部。此外，圖21~圖23係概略地顯示而未正確地記載噴出孔的配置或數量。 The configuration of the shower head 7 will be described with reference to Figs. 21 to 23 . The shower head 7 is provided with a diffusion unit 71 constituting a diffusion space D for diffusing the first gas, and a shower unit 72 for discharging the gas to the processing space S. As shown in Fig. 21, the stage 3 is attached from the stage 3 A shower assembly 72 and a diffusion assembly 71 are formed in an overlapping manner. The bottom plate 71a and the shower unit 72 of the diffusion unit 71 correspond to a partition portion that partitions the processing space S for performing the processing of the wafer W and the diffusion space D for diffusing the gas. 21 to 23 are schematicly displayed, and the arrangement or the number of the discharge holes are not accurately described.
如圖21、圖22所示，擴散組件71係構成為內部形成有讓氣體擴散的擴散室之扁平圓筒形狀。擴散組件71的頂板係連接有會將例如NF3氣體、Ar氣體、O2氣體、H2氣體等第1氣體供應至擴散組件71內之第1氣體供應管73的下游側端部，擴散組件71的底板71a係以貫穿底板之方式而設置有會噴出在擴散組件71內擴散的氣體之孔部74。第1氣體供應管73的上游側係連接有會混合NF3氣體、Ar氣體、O2氣體、H2氣體等氣體來供應至第1氣體供應管73之第1氣體供應源85。此外，圖21中的符號V6、M6分別為閥體及流量調整部。此範例中，雖係構成為從一處來將第1氣體供應至擴散組件71內，但例如亦可從分別個別地設置之氣體導入部來將複數氣體導入至擴散空間D。然後，亦可使複數種氣體在擴散空間D混合。 As shown in FIGS. 21 and 22, the diffusion unit 71 is configured to have a flat cylindrical shape in which a diffusion chamber for diffusing gas is formed. The top plate of the diffusion unit 71 is connected to a downstream end portion of the first gas supply pipe 73 that supplies the first gas such as NF 3 gas, Ar gas, O 2 gas, or H 2 gas to the diffusion unit 71, and the diffusion unit The bottom plate 71a of the 71 is provided with a hole portion 74 through which the gas diffused in the diffusion unit 71 is discharged so as to penetrate the bottom plate. A first gas supply source 85 that supplies a gas such as NF 3 gas, Ar gas, O 2 gas, or H 2 gas to the first gas supply pipe 73 is connected to the upstream side of the first gas supply pipe 73. Further, reference numerals V6 and M6 in Fig. 21 are a valve body and a flow rate adjusting unit, respectively. In this example, the first gas is supplied to the diffusion unit 71 from one place. For example, the plurality of gases may be introduced into the diffusion space D from the gas introduction portions that are separately provided. Then, a plurality of gases may be mixed in the diffusion space D.
又，如圖21、圖22所示擴散組件71的內部係構成為從平面來觀看擴散組件71，在靠近中心之位置係設置有中央側氣體供應管75，且不使透過連接於擴散組件71的頂板之第2氣體供應管76所供應的例如HF氣體或NH3氣體等後混合用第2氣體往擴散室擴散，而是供應至後述噴淋組件72的中央側區域。又，擴散組件71內部靠周緣的位置處係設置有周緣側氣體供應管77，而構成為不使透過連接於頂板之第2氣體供應管78所供應的第 2氣體往擴散室擴散，而是供應至後述噴淋組件72的周緣側區域。 Further, as shown in Figs. 21 and 22, the inside of the diffusion unit 71 is configured such that the diffusion unit 71 is viewed from a plane, and the center side gas supply pipe 75 is provided at a position close to the center, and the transmission is not connected to the diffusion unit 71. The second gas for post-mixing, such as HF gas or NH 3 gas supplied from the second gas supply pipe 76 of the top plate, is diffused into the diffusion chamber, and is supplied to the center side region of the shower unit 72 to be described later. Further, the periphery of the diffusion unit 71 is provided with a peripheral side gas supply pipe 77 at a position on the periphery thereof, and is configured not to diffuse the second gas supplied through the second gas supply pipe 78 connected to the top plate to the diffusion chamber. It is supplied to the peripheral side region of the shower assembly 72 to be described later.
此外，圖中的符號86為HF氣體或NH3氣體等後混合用的第2氣體供應源，圖21中的符號V4、V5分別為第2氣體供應管76、78所設置之閥體，符號M4、M5分別為第2氣體供應管76、78所設置之流量調整部。 Further, reference numeral 86 in the drawing denotes a second gas supply source for post-mixing such as HF gas or NH 3 gas, and symbols V4 and V5 in Fig. 21 are valve bodies provided in the second gas supply pipes 76 and 78, respectively. M4 and M5 are flow rate adjustment units provided in the second gas supply pipes 76 and 78, respectively.
如圖21、圖23所示，噴淋組件72係由扁平有底圓筒形狀的組件所構成，藉由擴散組件的底板71a來將上方封閉，則內部便會形成有噴淋室。噴淋室內係藉由區劃壁81而被區劃為中央區域與周緣側區域。然後，透過擴散組件71的中央側氣體供應管75而被供應至噴淋室之第2氣體係如圖21中以虛線的箭頭所示般地會流入至噴淋室內之區劃壁81所圍繞的中央區域，再從區劃壁81所圍繞之中央區域的底面所形成之中央側氣體噴出孔82流入至處理空間S，並朝向載置台3所載置之晶圓W被噴出。 As shown in Fig. 21 and Fig. 23, the shower assembly 72 is composed of a flat bottomed cylindrical member, and the upper portion is closed by the bottom plate 71a of the diffusion unit, and a shower chamber is formed inside. The shower chamber is partitioned into a central region and a peripheral side region by the partition wall 81. Then, the second gas system supplied to the shower chamber through the center side gas supply pipe 75 of the diffusion unit 71 flows into the shower wall 81 surrounded by the partition wall 81 as indicated by a broken line arrow in FIG. In the center region, the center side gas discharge hole 82 formed from the bottom surface of the central portion surrounded by the partition wall 81 flows into the processing space S, and is ejected toward the wafer W placed on the mounting table 3.
又，透過擴散組件71的周緣側氣體供應管77而被供應至噴淋室之第2氣體係如圖21中鏈線的箭頭所示般地流入較噴淋室內之區劃壁81要靠外側的周緣區域，再且從較區劃壁81要靠外側之周緣區域的底面所形成之周緣側氣體噴出孔83來流入至處理空間S，並朝向載置台3所載置之晶圓W被噴出。 Further, the second gas system supplied to the shower chamber through the peripheral side gas supply pipe 77 of the diffusion unit 71 flows into the outer side of the partition wall 81 in the shower chamber as indicated by the arrow of the chain line in FIG. In the peripheral region, the peripheral side gas discharge hole 83 formed on the bottom surface of the peripheral portion of the outer partition wall 81 flows into the processing space S, and is ejected toward the wafer W placed on the mounting table 3.
又，噴淋室內係分別對應於擴散組件71的底板71a所形成之孔部74而設置有氣體供應管84，如圖21中以實線的箭頭所示，係構成為不使從擴散組件71的孔部74噴出之第1氣體往噴淋室內擴散，而是朝噴淋組件72的下方噴出。該孔部74及氣體供應管84係相當於第1氣體噴出孔。此般基板處理裝置中，亦可使第1氣體在擴散空間D擴散再噴出至處理空間S，並且不使第2氣體通過擴散室，而是從噴淋組件72內的中央區域及周緣區域分別獨立地供應至處理空間S。於是，便可調整處理容器20內之第2氣體的濃度分佈而能獲得相同的效果。 Further, the shower chamber is provided with a gas supply pipe 84 corresponding to the hole portion 74 formed in the bottom plate 71a of the diffusion unit 71, as shown by the solid arrows in Fig. 21, and is configured not to pass the diffusion unit 71. The first gas ejected from the hole portion 74 is diffused into the shower chamber, and is ejected toward the lower side of the shower unit 72. The hole portion 74 and the gas supply pipe 84 correspond to the first gas discharge hole. In the substrate processing apparatus, the first gas may be diffused into the processing space S in the diffusion space D, and the second gas may not pass through the diffusion chamber, but may be separated from the central region and the peripheral region in the shower assembly 72. Supply to the processing space S independently. Thus, the same effect can be obtained by adjusting the concentration distribution of the second gas in the processing container 20.
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