TWI831846B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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TWI831846B
TWI831846B TW108136969A TW108136969A TWI831846B TW I831846 B TWI831846 B TW I831846B TW 108136969 A TW108136969 A TW 108136969A TW 108136969 A TW108136969 A TW 108136969A TW I831846 B TWI831846 B TW I831846B
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flow channel
heat exchange
flow
refrigerant
baffle
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TW108136969A
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TW202030769A (en
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斎藤道茂
金子彰太
山邊周平
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A substrate processing apparatus includes a processing vessel; a placing table provided within the processing vessel and configured to place a substrate thereon; and a component disposed between the processing vessel and the placing table, the component constituting an anode. The component has a flow path through which a heat exchange medium flows.

Description

基板處理裝置Substrate processing equipment

本發明係關於一種基板處理裝置。The present invention relates to a substrate processing device.

例如，吾人知悉有對晶圓等基板施予既定處理的基板處理裝置。For example, a substrate processing apparatus that performs predetermined processing on a substrate such as a wafer is known.

在專利文獻1中揭露了一種基板處理裝置，包含：圓筒狀的腔室，具有開口部；防沉積板，配置成沿著腔室的內壁，並在與腔室之開口部對應的位置具有開口部；及擋門，用於開閉防沉積板的開口部。 ［習知技術文獻］ ［專利文獻］Patent Document 1 discloses a substrate processing apparatus that includes: a cylindrical chamber having an opening; and an anti-deposition plate disposed along the inner wall of the chamber at a position corresponding to the opening of the chamber. It has an opening; and a blocking door for opening and closing the opening of the anti-sedimentation plate. [Known technical documents] [Patent Document]

專利文獻1：日本特開2015-126197號公報Patent Document 1: Japanese Patent Application Publication No. 2015-126197

［發明所欲解決之問題］[The problem that the invention aims to solve]

在本發明之一態樣中，係提供一種提高熱回應性的基板處理裝置。 ［解決問題之技術手段］In one aspect of the present invention, a substrate processing apparatus with improved thermal responsiveness is provided. [Technical means to solve problems]

為了解決上述問題，根據本發明之一態樣係提供一種基板處理裝置，包含：處理容器；載置台，配置於該處理容器之內部，用於載置基板；及零件，配置於該處理容器與該載置台之間，並形成陽極；該零件具有熱交換媒體所流動的流道。 ［對照先前技術之功效］In order to solve the above problem, according to one aspect of the present invention, a substrate processing device is provided, including: a processing container; a mounting table disposed inside the processing container for placing substrates; and parts disposed between the processing container and The anode is formed between the mounting platforms; the part has a flow channel for the heat exchange medium to flow. [Compare the effectiveness of previous technologies]

根據本發明之一態樣，可提供一種提高熱回應性的基板處理裝置。According to one aspect of the present invention, a substrate processing apparatus with improved thermal responsiveness can be provided.

以下，參照圖面說明用於實施本發明的態樣。在各圖面中，有時係對相同構成部分附加相同符號，並省略重複之說明。Hereinafter, aspects for implementing the present invention will be described with reference to the drawings. In each drawing, the same components may be assigned the same reference numerals, and repeated explanations may be omitted.

［電漿處理裝置］ 首先，使用圖1說明依本發明之一實施態樣之電漿處理裝置(基板處理裝置)。圖1係顯示依本發明之一實施態樣之電漿處理裝置之一例的剖面示意圖。[Plasma treatment device] First, a plasma processing apparatus (substrate processing apparatus) according to an embodiment of the present invention will be described using FIG. 1 . FIG. 1 is a schematic cross-sectional view showing an example of a plasma treatment device according to an embodiment of the present invention.

電漿處理裝置係對晶圓W等基板施予既定處理(例如，蝕刻處理、成膜處理、清潔處理及灰化處理等)。The plasma processing apparatus performs predetermined processing (for example, etching processing, film forming processing, cleaning processing, ashing processing, etc.) on a substrate such as a wafer W.

電漿處理裝置例如具有略圓筒狀的處理容器2，其由表面進行過陽極氧化處理的鋁製成。處理容器2係處於接地狀態。The plasma treatment apparatus has, for example, a roughly cylindrical treatment container 2 made of aluminum whose surface has been anodized. The processing container 2 is in a grounded state.

在處理容器2內的底部，係隔著陶瓷等絕緣板3，而設有略圓柱狀的支撐台4。在支撐台4上設有固持晶圓W，並作為底部電極而發揮功能的平台5。平台5亦稱為載置台。A substantially cylindrical support base 4 is provided at the bottom of the processing container 2 via an insulating plate 3 such as ceramic. The support table 4 is provided with a stage 5 that holds the wafer W and functions as a bottom electrode. Platform 5 is also called a mounting platform.

在支撐台4的內部設有冷卻室7。冷媒係經由冷媒導入管8而導入至冷卻室7。冷媒係在冷卻室7循環並從冷媒排出管9排出。在絕緣板3、支撐台4、平台5及靜電夾頭11形成有氣體通路14，用於將傳熱交換媒體(例如He氣等)供給至晶圓W的背面，接著，經由傳熱交換媒體將平台5的冷熱傳遞至晶圓W，而將晶圓W維持在既定溫度。A cooling chamber 7 is provided inside the support table 4 . The refrigerant is introduced into the cooling chamber 7 via the refrigerant introduction pipe 8 . The refrigerant circulates in the cooling chamber 7 and is discharged from the refrigerant discharge pipe 9 . A gas passage 14 is formed on the insulating plate 3, the support table 4, the platform 5 and the electrostatic chuck 11 for supplying a heat transfer medium (such as He gas, etc.) to the back surface of the wafer W. Then, via the heat transfer medium The cold and heat of the platform 5 is transferred to the wafer W, and the wafer W is maintained at a predetermined temperature.

在平台5的上側中央部上，設有圓形且與晶圓W大致相同直徑的靜電夾頭11。靜電夾頭11係在絕緣材之間配置吸附電極12。吸附電極12係與直流電源13連接，並藉由從直流電源13施加直流電壓，而藉由庫侖力將晶圓W靜電吸附於靜電夾頭11。An electrostatic chuck 11 that is circular and has approximately the same diameter as the wafer W is provided at the upper center portion of the stage 5 . The electrostatic chuck 11 has adsorption electrodes 12 arranged between insulating materials. The adsorption electrode 12 is connected to the DC power supply 13, and by applying a DC voltage from the DC power supply 13, the wafer W is electrostatically attracted to the electrostatic chuck 11 by Coulomb force.

圓環狀的邊緣環(亦稱為聚焦環)15係在平台5的上端周緣部，配置成包圍住載置於靜電夾頭11上之晶圓W。邊緣環15係由例如矽等導電性材料所形成，並具有使電漿之均勻性提高的作用。平台5的側面係被平台側面被覆構件60所覆蓋。An annular edge ring (also called a focus ring) 15 is attached to the upper peripheral edge of the stage 5 and is disposed to surround the wafer W placed on the electrostatic chuck 11 . The edge ring 15 is made of a conductive material such as silicon, and has the function of improving the uniformity of the plasma. The side surface of the platform 5 is covered with the platform side covering member 60 .

在平台5的上方設有氣體噴淋頭40。氣體噴淋頭40係設置成和作為底部電極而發揮功能的平台5相向，亦作為頂部電極而發揮功能。氣體噴淋頭40係隔著絕緣材41而被處理容器2的頂棚部所支撐。氣體噴淋頭40包含電極板24、及支撐電極板24之導電性材料的電極支撐體25。電極板24例如係以矽或SiC等導電材料或是半導體所構成，並具有許多氣孔45。電極板24係形成與平台5的相向面。A gas shower head 40 is provided above the platform 5 . The gas shower head 40 is provided to face the platform 5 functioning as a bottom electrode and also functions as a top electrode. The gas shower head 40 is supported by the ceiling of the processing container 2 via the insulating material 41 . The gas shower head 40 includes an electrode plate 24 and an electrode support 25 made of conductive material that supports the electrode plate 24 . The electrode plate 24 is made of a conductive material such as silicon or SiC or a semiconductor, and has many pores 45 . The electrode plate 24 forms a surface facing the platform 5 .

在電極支撐體25的中央設有氣體導入口26，氣體導入口26係與氣體供給管27連接。氣體供給管27係經由開閉閥28及質量流量控制器(MFC)29而與處理氣體供給源30連接。處理氣體供給源30係供給用於蝕刻等電漿處理的處理氣體或用於清潔處理的清潔氣體等。氣體係由質量流量控制器(MFC)29進行流量控制，並因應開閉閥28的開閉而經由氣體供給管27及氣體導入口26運送至氣體擴散室44。氣體係在氣體擴散室44擴散，並從許多的氣孔45導入至處理容器2的內部。A gas inlet 26 is provided in the center of the electrode support 25 , and the gas inlet 26 is connected to a gas supply pipe 27 . The gas supply pipe 27 is connected to the processing gas supply source 30 via an on-off valve 28 and a mass flow controller (MFC) 29 . The processing gas supply source 30 supplies processing gas used for plasma processing such as etching, cleaning gas used for cleaning processing, and the like. The gas system has a flow rate controlled by a mass flow controller (MFC) 29 and is transported to the gas diffusion chamber 44 via the gas supply pipe 27 and the gas inlet 26 in response to the opening and closing of the on-off valve 28 . The gas system diffuses in the gas diffusion chamber 44 and is introduced into the inside of the processing container 2 from the many pores 45 .

在處理容器2係裝卸自如地設有防沉積板23，用於防止在蝕刻等電漿處理時產生的反應產物附著於處理容器2之內壁。防沉積板23係處於接地狀態。又，防沉積板23亦可設於支撐台4及平台5之外周側的排氣空間S2。The processing container 2 is detachably provided with an anti-deposition plate 23 for preventing reaction products generated during plasma processing such as etching from adhering to the inner wall of the processing container 2 . The anti-sedimentation plate 23 is in a grounded state. In addition, the sedimentation prevention plate 23 may be provided in the exhaust space S2 on the outer peripheral side of the support table 4 and the platform 5 .

在防沉積板23與平台5之間，設有形成為圓環狀的擋板20。就防沉積板23及擋板20而言，可適當地使用在鋁材中被覆有氧化鋁、氧化釔(Y2 O3 )等陶瓷者。A baffle 20 formed in an annular shape is provided between the sedimentation prevention plate 23 and the platform 5 . The anti-deposition plate 23 and the baffle 20 may be suitably made of an aluminum material coated with ceramics such as alumina or yttrium oxide (Y 2 O 3 ).

擋板20具有調節氣體的流動，並均勻地將氣體從電漿處理室S1往排氣空間S2排出的功能。電漿處理室S1係藉由平台5、氣體噴淋頭40、防沉積板23及擋板20而形成電漿產生空間(電漿處理空間)。在電漿處理室S1的內部，係藉由從氣體噴淋頭40供給之氣體產生既定之電漿，再藉由電漿對晶圓W施予既定處理。The baffle 20 has the function of regulating the flow of gas and uniformly discharging the gas from the plasma processing chamber S1 to the exhaust space S2. The plasma processing chamber S1 forms a plasma generation space (plasma processing space) by the platform 5 , the gas shower head 40 , the anti-deposition plate 23 and the baffle 20 . Inside the plasma processing chamber S1, a predetermined plasma is generated by the gas supplied from the gas shower head 40, and a predetermined process is performed on the wafer W using the plasma.

電漿處理室S1的一部分，可藉由擋門22而開閉。亦即，在處理容器2中，設有用於將晶圓W搬入及搬出電漿處理室S1內的開口部2a。在處理容器2的側壁，設有開閉開口部2a的閘門閥GV。又，在防沉積板23中，在和開口部2a對應的位置設有開口部23a。擋門22係藉由升降機55而上下驅動，以開閉開口部23a。擋門22係處於接地狀態。在搬入及搬出晶圓W時，係打開閘門閥GV，並藉由升降機55的驅動使擋門22下降而打開擋門22，以將晶圓W從擋門22的開口搬入電漿處理室S1，或是從電漿處理室S1將晶圓W搬出。A part of the plasma processing chamber S1 can be opened and closed by the shutter 22 . That is, the processing container 2 is provided with the opening 2 a for carrying the wafer W into and out of the plasma processing chamber S1 . A gate valve GV is provided on the side wall of the processing container 2 for opening and closing the opening 2a. In addition, the sedimentation prevention plate 23 is provided with an opening 23a at a position corresponding to the opening 2a. The shutter 22 is driven up and down by the elevator 55 to open and close the opening 23a. The door 22 is in a grounded state. When loading and unloading the wafer W, the gate valve GV is opened, and the shutter 22 is lowered by driving the elevator 55 to open the shutter 22, so that the wafer W is moved into the plasma processing chamber S1 through the opening of the shutter 22. , or unload the wafer W from the plasma processing chamber S1.

在擋門22的內部設有冷媒(熱交換媒體)所流通的流道221(配合參照後述圖3)。冷媒係經由導入管71而導入流道221。冷媒係在流道221循環並從排出管72排出。又，在防沉積板23的內部設有冷媒所流通的流道231。冷媒係經由導入管73而導入流道231。冷媒係在流道231循環並從排出管74排出。又，亦可具備偵測冷媒流量的流量計及調整冷媒流量的調節器等。後述控制裝置100係因應從電漿處理室S1之電漿往擋門22的熱輸入量，而控制供給至流道221的冷媒流量。藉此，可將擋門22的溫度設定在所期望的溫度範圍。同樣地，控制裝置100係因應從電漿處理室S1的電漿往防沉積板23的熱輸入量，而控制供給至流道231的冷媒流量。藉此，可將防沉積板23的溫度設定在所期望的溫度範圍。又，冷媒的種類並無限定，例如可為乾燥空氣等氣體，亦可為冷卻水等液體。A flow path 221 through which a refrigerant (heat exchange medium) flows is provided inside the shutter 22 (see FIG. 3 to be described later). The refrigerant is introduced into the flow channel 221 via the introduction pipe 71 . The refrigerant circulates in the flow channel 221 and is discharged from the discharge pipe 72 . Furthermore, a flow path 231 through which the refrigerant flows is provided inside the sedimentation prevention plate 23 . The refrigerant is introduced into the flow channel 231 via the introduction pipe 73 . The refrigerant circulates in the flow passage 231 and is discharged from the discharge pipe 74 . In addition, a flow meter for detecting the refrigerant flow rate and a regulator for adjusting the refrigerant flow rate may be provided. The control device 100 described later controls the flow rate of the refrigerant supplied to the flow channel 221 in response to the amount of heat input from the plasma in the plasma processing chamber S1 to the shutter 22 . Thereby, the temperature of the door 22 can be set in a desired temperature range. Similarly, the control device 100 controls the flow rate of the refrigerant supplied to the flow channel 231 in response to the heat input amount from the plasma in the plasma processing chamber S1 to the anti-deposition plate 23 . Thereby, the temperature of the deposition prevention plate 23 can be set in a desired temperature range. In addition, the type of the refrigerant is not limited, and it may be a gas such as dry air or a liquid such as cooling water.

在電漿處理室S1下側的擋板20之下，形成有用於進行排氣的排氣空間S2。藉此，可抑制電漿侵入擋板20下游側之排氣空間S2的情形。An exhaust space S2 for exhaust is formed below the baffle 20 on the lower side of the plasma processing chamber S1. This can prevent plasma from intruding into the exhaust space S2 on the downstream side of the baffle 20 .

第一射頻電源51係產生電漿產生用的射頻電力HF。第一射頻電源51例如產生頻率60MHz的射頻電力HF。第一射頻電源51係經由匹配器52而與氣體噴淋頭40連接。匹配器52係用於使第一射頻電源51的輸出阻抗與負載側(頂部電極側)的輸入阻抗匹配的電路。The first radio frequency power supply 51 generates radio frequency power HF for plasma generation. The first radio frequency power supply 51 generates radio frequency power HF with a frequency of 60 MHz, for example. The first radio frequency power supply 51 is connected to the gas shower head 40 via the matching device 52 . The matching device 52 is a circuit for matching the output impedance of the first radio frequency power supply 51 with the input impedance of the load side (top electrode side).

第二射頻電源53係產生用於將離子引入晶圓W的射頻偏壓電力LF。第二射頻電源53例如產生頻率20MHz的射頻偏壓電力LF。第二射頻電源53係經由匹配器54而與平台5連接。匹配器54係用於使第二射頻電源53的輸出阻抗與負載側(底部電極側)的輸入阻抗匹配的電路。The second radio frequency power supply 53 generates radio frequency bias power LF for introducing ions into the wafer W. The second radio frequency power supply 53 generates radio frequency bias power LF with a frequency of 20 MHz, for example. The second radio frequency power supply 53 is connected to the platform 5 via the matching device 54 . The matching device 54 is a circuit for matching the output impedance of the second radio frequency power supply 53 with the input impedance of the load side (bottom electrode side).

在處理容器2的底部連接有排氣管31，而排氣管31係與排氣裝置35連接。排氣裝置35具有渦輪分子泵等真空泵，並可將處理容器2內抽真空至既定的減壓環境。又，在處理容器2的側壁設有閘門閥GV，並藉由閘門閥GV的開閉，而將晶圓W在處理容器2內搬入及搬出。An exhaust pipe 31 is connected to the bottom of the processing container 2 , and the exhaust pipe 31 is connected to an exhaust device 35 . The exhaust device 35 has a vacuum pump such as a turbomolecular pump and can evacuate the inside of the processing container 2 to a predetermined reduced pressure environment. In addition, a gate valve GV is provided on the side wall of the processing container 2 , and the wafer W is loaded into and out of the processing container 2 by opening and closing the gate valve GV.

電漿處理裝置係由控制裝置100加以控制。控制裝置100係包含通信介面(I/F)105、CPU110、記憶體115等的電腦。在記憶體115中儲存有「用於藉由CPU110控制電漿處理裝置所執行之蝕刻等各種電漿處理的控制程式」，及「用於因應處理條件而使電漿處理裝置之各部執行處理的程式，亦即處理程序」。CPU110係使用儲存於記憶體115之處理程序及控制程式，而控制電漿處理裝置之各部(升降機55、排氣裝置35、直流電源13、第一射頻電源51、第二射頻電源53及處理氣體供給源30等)。The plasma treatment device is controlled by the control device 100 . The control device 100 is a computer including a communication interface (I/F) 105, a CPU 110, a memory 115, and the like. The memory 115 stores "a control program for controlling various plasma processes such as etching executed by the plasma processing apparatus by the CPU 110" and "a program for causing each part of the plasma processing apparatus to execute processing in accordance with the processing conditions." Program, that is, processing program." The CPU 110 uses the processing programs and control programs stored in the memory 115 to control various parts of the plasma processing device (elevator 55, exhaust device 35, DC power supply 13, first radio frequency power supply 51, second radio frequency power supply 53 and processing gas Supply source 30, etc.).

接著，參照圖2及圖3進一步說明具有流道221、231的擋門22及防沉積板23。又，在以下說明中，係以具有流道221之擋門22為例進行說明。又，關於防沉積板23之流道231的構造，由於和擋門22之流道221的構造相同，故省略重複之說明。Next, the door 22 and the sedimentation prevention plate 23 having the flow channels 221 and 231 will be further described with reference to FIGS. 2 and 3 . In addition, in the following description, the door 22 having the flow channel 221 is taken as an example. In addition, since the structure of the flow channel 231 of the sedimentation prevention plate 23 is the same as the structure of the flow channel 221 of the damper 22, repeated description is omitted.

圖2係顯示依本發明之一實施態樣之電漿處理裝置之擋門22之一例的立體圖。圖3係顯示依本發明之一實施態樣之電漿處理裝置之擋門22之內部構造之一例的部分剖面立體圖。又，圖3係將與電漿處理室S1面對之一側的側壁部222切開的圖式。FIG. 2 is a perspective view showing an example of the door 22 of the plasma processing device according to an embodiment of the present invention. FIG. 3 is a partially cross-sectional perspective view showing an example of the internal structure of the door 22 of the plasma processing apparatus according to an embodiment of the present invention. 3 is a cutaway view of the side wall portion 222 on the side facing the plasma processing chamber S1.

如圖2所示，擋門22包含側壁部222及肋部223。側壁部222係封閉防沉積板23之開口部23a的構件，其沿著圓筒狀的防沉積板23之形狀而彎曲成圓弧狀。肋部223係形成為從側壁部222之下端側向處理容器2之中心方向延伸。肋部223的底面側係由升降機55所支撐。在擋門22關閉開口部23a時，肋部223的頂面亦可與防沉積板23接觸。又，側壁部222的上端亦可與防沉積板23接觸。藉此，防沉積板23與擋門22會電性連接，而使擋門22亦處於接地狀態。As shown in FIG. 2 , the door 22 includes a side wall part 222 and a rib part 223. The side wall portion 222 is a member that closes the opening 23 a of the sedimentation prevention plate 23 , and is curved in an arc shape along the shape of the cylindrical sedimentation prevention plate 23 . The rib 223 is formed to extend from the lower end side of the side wall 222 toward the center direction of the processing container 2 . The bottom side of the rib 223 is supported by the elevator 55 . When the shutter 22 closes the opening 23a, the top surface of the rib 223 may also contact the anti-sediment plate 23. In addition, the upper end of the side wall portion 222 may be in contact with the sedimentation prevention plate 23 . Thereby, the anti-sedimentation plate 23 and the door 22 are electrically connected, so that the door 22 is also in a grounded state.

如圖3所示，在擋門22之側壁部222的內部，形成有冷媒所流通的流道221。換言之，擋門22包含：外殼構件224，在內部具有空間並形成外殼；分隔構件225，配置於外殼構件224之內部，並形成流道221；及熱交換促進構件226，配置於流道221。As shown in FIG. 3 , a flow channel 221 through which the refrigerant flows is formed inside the side wall portion 222 of the door 22 . In other words, the door 22 includes a housing member 224 having a space inside and forming a housing; a partition member 225 disposed inside the housing member 224 and forming the flow channel 221 ; and a heat exchange promotion member 226 disposed in the flow channel 221 .

在外殼構件224形成有將內部空間與外部連通的流入路徑227及流出路徑228、229。又，在圖3所示之例子中，係在周向之中心且下側形成有流入路徑227，並在周向之外側且下側形成有流出路徑228、229。The housing member 224 is formed with an inflow path 227 and outflow paths 228 and 229 that communicate the internal space with the outside. In the example shown in FIG. 3 , an inflow path 227 is formed at the center in the circumferential direction and on the lower side, and outflow paths 228 and 229 are formed on the outer and lower side in the circumferential direction.

分隔構件225係配置於外殼構件224的內部，並形成從流入路徑227往流出路徑228、229的流道221。又，在圖3中係以圖式說明，流道221之其中一端係與流入路徑227連通，並且形成為在流道221的中途分支而一邊上下往復一邊朝周向外側的流道。又，雖然以圖式說明，流道221之另一端係形成為分別與流出路徑228、229連通的流道，但並不限定於此。The partition member 225 is disposed inside the housing member 224 and forms a flow path 221 from the inflow path 227 to the outflow paths 228 and 229 . Furthermore, as illustrated in FIG. 3 , one end of the flow channel 221 is connected to the inflow path 227 , and is formed as a flow channel that branches in the middle of the flow channel 221 and reciprocates up and down while facing outward in the circumferential direction. Furthermore, although the drawings illustrate that the other end of the flow path 221 is formed as a flow path that communicates with the outflow paths 228 and 229 respectively, it is not limited to this.

熱交換促進構件226係設置於藉由外殼構件224及分隔構件225所形成的流道221內。換言之，熱交換促進構件226係配置成阻礙在流道221內流通之冷媒的流動。熱交換促進構件226係使與在流道221流動之冷媒的接觸面積增加，以促進擋門22與冷媒的熱交換。又，熱交換促進構件226係從內側支撐外殼構件224。藉此，可確保中空構造之擋門22的強度及剛性。熱交換促進構件226，例如，可具有網目狀或柱狀的構造，亦可具有晶格構造(格子構造)。又，熱交換促進構件226的形狀及配置並不限定於這些。The heat exchange promotion member 226 is provided in the flow channel 221 formed by the shell member 224 and the partition member 225. In other words, the heat exchange promotion member 226 is configured to hinder the flow of the refrigerant circulating in the flow path 221 . The heat exchange promotion member 226 increases the contact area with the refrigerant flowing in the flow channel 221 to promote heat exchange between the damper 22 and the refrigerant. In addition, the heat exchange promotion member 226 supports the outer shell member 224 from the inside. Thereby, the strength and rigidity of the hollow structure door 22 can be ensured. The heat exchange promotion member 226 may have, for example, a mesh-like or columnar structure, or may have a lattice structure (lattice structure). In addition, the shape and arrangement of the heat exchange promotion member 226 are not limited to these.

又，圖示雖然省略，但在肋部223的內部具有空間，亦可在其內部空間具有「網目狀或柱狀的構造、晶格構造(格子構造)、蜂巢構造等確保強度或剛性並輕量化的構造」。In addition, although the illustration is omitted, the rib 223 has a space inside, and the internal space may have a mesh-like or columnar structure, a lattice structure (lattice structure), a honeycomb structure, etc. to ensure strength or rigidity while being lightweight. Quantitative constructs".

圖4係顯示流道221內之冷媒的溫度分布的模擬結果之一例的立體圖。圖5係顯示流道221內之冷媒的流動的示意圖。又，圖4(a)及圖5(a)係顯示在流道221內設有熱交換促進構件226的情況，圖4(b)及圖5(b)係顯示未設有熱交換促進構件226的情況。又，在圖4的模擬結果中係以圖式說明，溫度越高附加越深的陰影線。又，在圖5中，係以箭頭表示冷媒的流動。FIG. 4 is a perspective view showing an example of a simulation result of the temperature distribution of the refrigerant in the flow channel 221 . FIG. 5 is a schematic diagram showing the flow of refrigerant in the flow channel 221 . In addition, FIGS. 4(a) and 5(a) show the case where the heat exchange promotion member 226 is provided in the flow path 221, and FIGS. 4(b) and 5(b) show the case where the heat exchange promotion member is not provided. 226 situation. In addition, the simulation results in FIG. 4 illustrate graphically that the higher the temperature, the darker the hatching. In addition, in FIG. 5 , the flow of the refrigerant is indicated by arrows.

將從電漿處理室S1往擋門22之熱輸入量設為1W/m2 ，並將乾燥空氣設為冷媒，而進行使冷媒從流入路徑227往流出路徑228，229流動時的冷媒溫度分布的模擬。又，如圖3所示，由於流道221具有左右對稱的形狀，因此僅針對其中一邊進行模擬。在圖4中，係顯示圖3之以虛線A所示之區域中的模擬結果。The temperature distribution of the refrigerant when the heat input amount from the plasma processing chamber S1 to the shutter 22 is 1 W/m 2 , dry air is used as the refrigerant, and the refrigerant is flowed from the inflow path 227 to the outflow paths 228 and 229 simulation. In addition, as shown in FIG. 3 , since the flow channel 221 has a left-right symmetrical shape, only one side is simulated. In Fig. 4, the simulation results in the area indicated by the dotted line A in Fig. 3 are shown.

如圖4(b)所示，藉由使冷媒在流道221流動，可確認與流入面中之冷媒的溫度相比，流出面221a中之冷媒的溫度較為上升。具體而言，流出面221a中之冷媒的溫度與流入面中之冷媒的溫度相比，最高上升了0.2℃。換言之，可確認能夠冷卻擋門22。As shown in FIG. 4(b) , by causing the refrigerant to flow through the flow channel 221, it can be confirmed that the temperature of the refrigerant in the outflow surface 221a is higher than the temperature of the refrigerant in the inflow surface. Specifically, the temperature of the refrigerant in the outflow surface 221a increases by up to 0.2°C compared with the temperature of the refrigerant in the inflow surface. In other words, it was confirmed that the shutter 22 can be cooled.

又，如圖4(a)所示，藉由在流道221內配置熱交換促進構件226，可確認流出面221a中之冷媒的溫度與圖4(b)所示之例子相比較為上升。具體而言，流出面221a中之冷媒的溫度與流入面中之冷媒的溫度相比，最高上升了0.43℃。亦即，藉由在流道221內配置熱交換促進構件226，可確認能夠提高擋門22與冷媒之熱交換性能。Moreover, as shown in FIG. 4(a) , by arranging the heat exchange promotion member 226 in the flow path 221, it can be confirmed that the temperature of the refrigerant in the outflow surface 221a is increased compared with the example shown in FIG. 4(b). Specifically, the temperature of the refrigerant in the outflow surface 221a increases by up to 0.43°C compared with the temperature of the refrigerant in the inflow surface. That is, by arranging the heat exchange promotion member 226 in the flow path 221, it was confirmed that the heat exchange performance between the damper 22 and the refrigerant can be improved.

又，在以圖4(b)之虛線C所示之角部的區域中，形成有冷媒之溫度較高的區域。如圖5(b)所示，冷媒從流入路徑227流入流道221時，冷媒係大範圍地流動於流道221的略中央，並同時在以虛線E所示之區域中產生渦流。在「此渦流之流動」與「流道221之角部」間的以虛線F所示之區域中，會產生冷媒的停滯。此角部的冷媒會因為與擋門22進行熱交換而溫度上升。又，因為停滯而變得難以流向流出面221a。因此，如圖4(b)所示，在以虛線C所示之角部的區域中，會形成冷媒之溫度較高的區域。Moreover, in the corner area shown by the dotted line C in FIG. 4(b) , an area in which the temperature of the refrigerant is relatively high is formed. As shown in FIG. 5( b ), when the refrigerant flows into the flow channel 221 from the inflow path 227 , the refrigerant flows over a wide area in the approximate center of the flow channel 221 , and at the same time, a vortex is generated in the area shown by the dotted line E. In the area shown by the dotted line F between the "flow of this vortex" and the "corner of the flow path 221", stagnation of the refrigerant occurs. The temperature of the refrigerant in this corner will rise due to heat exchange with the damper 22 . Furthermore, it becomes difficult to flow to the outflow surface 221a due to stagnation. Therefore, as shown in FIG. 4(b) , a region in which the temperature of the refrigerant is relatively high is formed in the corner region indicated by the dotted line C.

相對於此，藉由在流道221內配置熱交換促進構件226，如圖5(a)所示，會產生整流效果。亦即，如圖5(a)所示，熱交換促進構件226係配置成阻礙冷媒的流動。藉此，流道221內之冷媒的流動，會因為熱交換促進構件226而分支。即使在以虛線D所示之角部的區域中，亦供給有分支後的冷媒。接著，供給至角部之區域的冷媒，會流向流出面221a。如圖4(a)所示。在以虛線B所示之角部的區域中，冷媒之溫度較高的區域會被消除。On the other hand, by arranging the heat exchange promotion member 226 in the flow path 221, as shown in FIG. 5(a) , a rectifying effect is produced. That is, as shown in FIG. 5(a) , the heat exchange promotion member 226 is arranged to hinder the flow of the refrigerant. Thereby, the flow of the refrigerant in the flow channel 221 is branched by the heat exchange promotion member 226 . Even in the corner area shown by the dotted line D, branched refrigerant is supplied. Then, the refrigerant supplied to the corner area flows toward the outflow surface 221a. As shown in Figure 4(a). In the corner area shown by the dotted line B, the area with a higher temperature of the refrigerant will be eliminated.

以上，依本發明之一實施態樣之電漿處理裝置包含：具有流道221的擋門22、及具有流道231的防沉積板23，並且在流道221、231中流通有冷媒。As mentioned above, the plasma processing device according to one embodiment of the present invention includes: the door 22 having the flow channel 221 and the anti-deposition plate 23 having the flow channel 231, and the refrigerant flows in the flow channels 221 and 231.

此外，隨著晶圓W之元件構造往微型化及高積體化推進，接觸孔等亦往高橫寬化推進。因此，在高橫寬比的蝕刻中，係往射頻偏壓電力LF的低頻化及高功率化推進。因此，作為接地電位的擋門22及防沉積板23與電漿的電位差會變大。因離子濺射所造成之消耗的增加及加速、及因來自電漿的熱輸入量增加而導致的零件溫度上升(溫度控制性惡化)會成為問題。In addition, as the device structure of the wafer W advances toward miniaturization and higher integration, contact holes and the like also advance toward higher lateral widths. Therefore, in etching with a high aspect ratio, the radio frequency bias power LF is promoted to be lower in frequency and higher in power. Therefore, the potential difference between the shutter 22 and the deposition prevention plate 23, which are ground potential, and the plasma becomes large. The increase and acceleration of consumption due to ion sputtering and the increase in component temperature (deterioration of temperature controllability) due to the increase in heat input from the plasma become problems.

相對於此，根據依本發明之一實施態樣之電漿處理裝置的擋門22及防沉積板23，可藉由使冷媒在流道221、231中流動，而進行溫度控制。藉此，例如，即使因為射頻偏壓電力LF的高功率化，而使往擋門22及防沉積板23的熱輸入量增加，亦可將擋門22及防沉積板23冷卻在既定溫度範圍。In contrast, according to the shutter 22 and the deposition prevention plate 23 of the plasma processing apparatus according to an embodiment of the present invention, the temperature can be controlled by causing the refrigerant to flow in the flow channels 221 and 231 . Thereby, for example, even if the heat input to the baffle 22 and the anti-deposition plate 23 increases due to the increase in the power of the radio frequency bias power LF, the baffle 22 and the anti-deposition plate 23 can be cooled within a predetermined temperature range. .

又，由於可將擋門22及防沉積板23設成中空構造，故和實心(solid)的擋門及防沉積板相比，可輕量化。藉由將擋門22及防沉積板23輕量化，熱容量亦會下降。藉此，可提高使冷媒於流道221、231流動而對擋門22及防沉積板23進行溫度控制時的熱回應性。因此，由於可將擋門22及防沉積板23迅速地設在目標溫度範圍，故藉由電漿處理裝置所進行之基板處理的生產率亦會提高。In addition, since the shutter 22 and the sedimentation prevention plate 23 can be provided with a hollow structure, they can be lightweight compared to solid shutters and sedimentation prevention plates. By reducing the weight of the door 22 and the anti-deposition plate 23, the heat capacity will also be reduced. This can improve the thermal responsiveness when the refrigerant flows through the flow passages 221 and 231 to control the temperature of the baffle 22 and the deposition prevention plate 23 . Therefore, since the shutter 22 and the anti-deposition plate 23 can be quickly set in the target temperature range, the productivity of substrate processing by the plasma processing apparatus will also be improved.

又，在維修電漿處理裝置時，例如，就從處理容器2將防沉積板23取出而言，藉由將防沉積板23輕量化，可提高操作性。又，藉由將可動構件亦即擋門22輕量化，可降低升降機55的輸出。又，可降低擋門22及防沉積板23的材料成本。Furthermore, when maintaining the plasma processing apparatus, for example, when removing the deposition prevention plate 23 from the processing container 2, the weight of the deposition prevention plate 23 can be improved, thereby improving operability. Furthermore, by reducing the weight of the door 22 which is a movable member, the output of the elevator 55 can be reduced. In addition, the material cost of the door 22 and the anti-deposition plate 23 can be reduced.

又，由於藉由在流道221、231內設置熱交換促進構件226，會增加與在流道221、231流動之冷媒的接觸面積，故可提高熱交換性能。又，藉由在配置於流道221內作為阻礙物的熱交換促進構件226的下游側，形成剝離並再附著之冷媒的流動，而提高熱交換性能。藉此，提高使冷媒於流道221、231流動而對擋門22及防沉積板23進行溫度控制時的熱回應性。又，藉由在流道221、231內設置熱交換促進構件226，如將圖5(a)與圖5(b)進行對比所示，可抑制在流道221之角部產生停滯。藉此，可使擋門22及防沉積板23之溫度分布的均勻性提高。In addition, by providing the heat exchange promotion member 226 in the flow channels 221 and 231, the contact area with the refrigerant flowing in the flow channels 221 and 231 is increased, so that the heat exchange performance can be improved. Furthermore, the heat exchange performance is improved by forming a flow of the detached and reattached refrigerant on the downstream side of the heat exchange promotion member 226 disposed as an obstruction in the flow path 221 . This improves the thermal responsiveness when the refrigerant flows through the flow passages 221 and 231 to control the temperature of the damper 22 and the sedimentation prevention plate 23 . Furthermore, by providing the heat exchange promotion member 226 in the flow passages 221 and 231, as shown by comparing FIG. 5(a) and FIG. 5(b) , the generation of stagnation at the corners of the flow passage 221 can be suppressed. Thereby, the uniformity of the temperature distribution of the baffle 22 and the anti-deposition plate 23 can be improved.

又，藉由在中空構造的流道221、231內部形成熱交換促進構件226，可確保擋門22及防沉積板23的強度及剛性。In addition, by forming the heat exchange promotion member 226 inside the hollow-structured flow passages 221 and 231, the strength and rigidity of the shutter 22 and the sedimentation prevention plate 23 can be ensured.

又，如圖1所示，雖然以在擋門22及防沉積板23設置流道之態樣進行說明，但本發明並不限定於此，亦可為在擋門22及防沉積板23中，於至少一者設置流道的構成。In addition, as shown in FIG. 1 , although the flow channel is provided in the baffle door 22 and the sedimentation prevention plate 23 in the description, the present invention is not limited to this, and it may also be provided in the baffle door 22 and the sedimentation prevention plate 23 . , a flow channel is provided in at least one of them.

例如，亦可為僅在防沉積板23設置流道231的構成。防沉積板23具有略圓筒形狀，並配置成包圍整個電漿處理室S1。相對於此，擋門22係配置於略圓筒形狀之一部分的範圍。因此，藉由在防沉積板23設置流道231，可將流道231配置成包圍整個電漿處理室S1。For example, the flow channel 231 may be provided only in the sedimentation prevention plate 23 . The deposition prevention plate 23 has a substantially cylindrical shape and is configured to surround the entire plasma processing chamber S1. On the other hand, the shutter 22 is arranged in a range of a part of a substantially cylindrical shape. Therefore, by providing the flow channel 231 in the deposition prevention plate 23, the flow channel 231 can be arranged to surround the entire plasma processing chamber S1.

又，例如，亦可為僅在擋門22設置流道221的構成。防沉積板23係與處理容器2等其他構件接觸，並將來自電漿處理室S1的熱輸入，對其他構件進行散熱。另一方面，由於擋門22係可動構件，因此和防沉積板23相比，與其他構件的接觸較少，對其他構件的散熱亦較少。因此，會有擋門22之溫度高於防沉積板23之溫度的疑慮。相對於此，藉由在擋門22設置流道221，例如可使擋門22的溫度與防沉積板23的溫度一致。藉此，提高電漿處理室S1之溫度的均勻性。Alternatively, for example, the flow path 221 may be provided only in the shutter 22 . The anti-deposition plate 23 is in contact with other components such as the processing container 2 and inputs heat from the plasma processing chamber S1 to dissipate heat from the other components. On the other hand, since the baffle 22 is a movable component, it has less contact with other components than the anti-sediment plate 23 and dissipates less heat to other components. Therefore, there is a possibility that the temperature of the door 22 is higher than the temperature of the anti-deposition plate 23 . On the other hand, by providing the flow channel 221 in the door 22 , for example, the temperature of the door 22 can be made consistent with the temperature of the anti-deposition plate 23 . Thereby, the temperature uniformity of the plasma processing chamber S1 is improved.

接著，說明擋門22及防沉積板23的製造方法。擋門22及防沉積板23係在其內部形成有流道221、231，並且具有中空構造。因此，擋門22及防沉積板23較佳係以3D列印技術、積層製造(Additive Manufacturing)技術進行製造。具體而言，可採用使用金屬材料的積層造形技術。例如，可使用以下技術：藉由對粉末金屬照射雷射或電子束使其燒結而進行造形的造形技術；及藉由一邊供給粉末金屬或金屬線，一邊以雷射或電子束使材料熔融並堆積而進行造形的造形技術等。又，該等造形方法僅為一例，本發明並不限定於上述方法。Next, the manufacturing method of the shutter 22 and the sedimentation prevention plate 23 is demonstrated. The door 22 and the anti-sedimentation plate 23 have flow channels 221 and 231 formed inside them, and have a hollow structure. Therefore, the door 22 and the anti-deposition plate 23 are preferably manufactured using 3D printing technology and additive manufacturing technology. Specifically, a multilayer molding technology using metal materials can be used. For example, the following techniques can be used: a molding technique that irradiates powdered metal with laser or electron beam to sinter it; and a molding technique that melts the material with laser or electron beam while supplying powdered metal or metal wires. Molding technology such as stacking and shaping. In addition, these molding methods are only examples, and the present invention is not limited to the above methods.

又，本發明係以下述態樣進行說明：在擋門22及防沉積板23中，構成外殼的外殼構件224、用於形成流道221的分隔構件225、及設於流道221中的熱交換促進構件226係由相同之材料構成。然而，並不限定於此，亦可使用不同種類的材料。例如，亦可將外殼構件224及分隔構件225設為鋁，而在熱交換促進構件226使用熱傳導率高的金屬材料(例如Cu)。又，就熱交換促進構件226而言，亦可使用強度高的金屬材料。In addition, the present invention will be described in the following aspect: in the shutter 22 and the sedimentation prevention plate 23, the outer shell member 224 constituting the outer shell, the partition member 225 for forming the flow channel 221, and the heat sink provided in the flow channel 221. The exchange facilitation member 226 is composed of the same material. However, it is not limited to this, and different types of materials may be used. For example, the housing member 224 and the partition member 225 may be made of aluminum, and a metal material with high thermal conductivity (for example, Cu) may be used for the heat exchange promotion member 226 . In addition, a high-strength metal material may be used for the heat exchange promotion member 226 .

以上所說明之擋門22及防沉積板23，係配置於處理容器2與平台5之間，並具有熱交換媒體所流動的流道，且為形成陽極之零件之一例。The door 22 and the anti-sedimentation plate 23 described above are arranged between the processing container 2 and the platform 5, and have flow channels for the heat exchange medium to flow, and are examples of parts that form the anode.

平台5係形成陰極之構件，與形成陰極之構件相向的形成陽極之零件，除了擋門22及防沉積板23之外，亦包含頂部電極(氣體噴淋頭40)及擋板20。The platform 5 is the component that forms the cathode, and the part that forms the anode is opposite to the component that forms the cathode. In addition to the baffle 22 and the anti-deposition plate 23, it also includes the top electrode (gas shower head 40) and the baffle 20.

［擋板］ 以下，參照圖6及圖7說明形成陽極之零件的另一例，亦即擋板20。圖6係顯示依本發明之一實施態樣之電漿處理裝置之擋板20之內部構造之一部分的橫剖面圖。圖7(a)係顯示圖6(b)之H-H線剖面的圖式，圖7(b)係顯示圖6(b)之I-I線剖面的圖式。[Baffle] Hereinafter, another example of the component forming the anode, that is, the baffle 20 will be described with reference to FIGS. 6 and 7 . FIG. 6 is a cross-sectional view showing a part of the internal structure of the baffle 20 of the plasma processing apparatus according to an embodiment of the present invention. Fig. 7(a) is a diagram showing a cross-section along the line H-H in Fig. 6(b), and Fig. 7(b) is a diagram showing a cross-section along the line I-I in Fig. 6(b).

擋板20形成為圓環狀。圖6(a)係顯示將擋板20沿水平方向切開時之剖面的一部分。又，將圖6(a)的區域G放大而顯示於圖6(b)。擋板20具有複數狹縫20a。複數狹縫20a係全部相同，並配置成大致平行。複數狹縫20a各自係在擋板20的寬度方向上具有長邊方向，並以等間距配置在周向上。各狹縫20a係貫通擋板20。The baffle 20 is formed in an annular shape. FIG. 6(a) shows a part of the cross-section when the baffle 20 is cut along the horizontal direction. Moreover, the area G of FIG. 6(a) is enlarged and displayed in FIG. 6(b). The baffle 20 has a plurality of slits 20a. The plurality of slits 20a are all the same and arranged substantially in parallel. Each of the plurality of slits 20 a has a longitudinal direction in the width direction of the baffle 20 and is arranged at equal intervals in the circumferential direction. Each slit 20a penetrates the baffle 20.

在擋板20的內部中，係在各狹縫20a間形成有流道201。流道201係在各狹縫20a之內側端部的附近具有兩端部，其一端為導入口IN，另一端為排出口OUT。又，流道201係形成為在各狹縫20a之外側端部的外側進行U型迴轉。亦即，流道201係沿著各狹縫20a而形成為U字形，並在複數狹縫20a間曲折行進。擋板20的內部中，係在比各狹縫20a更內側的位置，形成有環狀的流道202及流道203兩者。Inside the baffle 20, a flow path 201 is formed between the slits 20a. The flow channel 201 has two ends near the inner end of each slit 20a, one end of which is an inlet IN, and the other end is an outlet OUT. Moreover, the flow path 201 is formed so that it may make a U-turn outside the outer end part of each slit 20a. That is, the flow path 201 is formed in a U shape along each slit 20a, and meanders between the plurality of slits 20a. Inside the baffle 20, both an annular flow channel 202 and a flow channel 203 are formed inwardly of each slit 20a.

以上所說明之U字形的流道201，其在一端的導入口IN與流道202連接，並在另一端的排出口OUT與流道203連接。從未圖示之急冷器單元輸出的冷媒係在流道202流通，並在複數導入口IN分流至複數流道201。經分流之冷媒係在形成於各狹縫20a之周圍的流道201流動，並於複數排出口OUT合流至流道203，而再度回到急冷器單元。藉此，藉由將冷媒依照流道202→流道201→流道203的順序流動，可對整個擋板20進行溫度控制，而提高熱回應性。The U-shaped flow channel 201 described above has the inlet IN at one end connected to the flow channel 202, and the outlet OUT at the other end connected to the flow channel 203. The refrigerant output from the quencher unit (not shown) circulates in the flow passage 202 and is divided into the plurality of flow passages 201 at the plurality of inlets IN. The divided refrigerant flows in the flow channel 201 formed around each slit 20a, merges into the flow channel 203 at the plurality of discharge ports OUT, and returns to the quench unit again. Thereby, by flowing the refrigerant in the order of flow channel 202→flow channel 201→flow channel 203, the temperature of the entire baffle 20 can be controlled, thereby improving thermal responsiveness.

又，在流道202及流道203流動之冷媒的流向，並不限於圖6(b)所示之流向。又，將擋板20設為中空構造而形成之流道201~203的形狀並不限定於此。例如，亦可使導入口IN與排出口OUT相反，而使從急冷器單元輸出的冷媒係依照流道203→流道201→流道202的順序流動。在流道201~203中，亦可具備偵測冷媒流量的流量計、調整冷媒流量的調節器等。In addition, the flow direction of the refrigerant flowing in the flow path 202 and the flow path 203 is not limited to the flow direction shown in FIG. 6(b). In addition, the shape of the flow passages 201 to 203 formed by making the baffle 20 have a hollow structure is not limited to this. For example, the inlet IN and the discharge port OUT may be reversed so that the refrigerant output from the quencher unit flows in the order of flow channel 203 → flow channel 201 → flow channel 202 . The flow passages 201 to 203 may also be provided with a flow meter for detecting the refrigerant flow rate, a regulator for adjusting the refrigerant flow rate, etc.

又，本發明並不限定將流道201設於擋板20之所有狹縫20a的周圍。流道201例如亦可設置成將複數狹縫20a之中，鄰接之兩個以上的狹縫20a包圍，亦可設在相對於擋板20之中心而具有對稱性的位置。又，亦可在比狹縫20a之內周端部更內側的位置設置流道202及/或流道203。又，亦可在比狹縫20a之外周端部更外側的位置設置流道，亦可將以上所說明之流道加以組合。但是，為了使溫度控制性及熱回應性提高，流道201較佳係配置成等間隔，且盡可能地密集。In addition, the present invention is not limited to providing the flow channel 201 around all the slits 20a of the baffle 20. For example, the flow channel 201 may be provided to surround two or more adjacent slits 20a among the plurality of slits 20a, or may be provided at a symmetrical position with respect to the center of the baffle 20. In addition, the flow path 202 and/or the flow path 203 may be provided inward of the inner peripheral end of the slit 20a. Furthermore, a flow path may be provided at a position further outside the outer peripheral end of the slit 20a, or the flow paths described above may be combined. However, in order to improve the temperature controllability and thermal responsiveness, the flow channels 201 are preferably arranged at equal intervals and as densely as possible.

在流道201的內部，係分散地設有複數熱交換促進構件206。熱交換促進構件206可為棒狀，亦可為板狀，亦可具有其他構造(例如晶格構造)，並實現輕量化等。若參照圖6(b)，則熱交換促進構件206係在流道201的內部，以錯開的方式交替地配置於流道201之外側面及內側面的附近。但是，本發明並不限定於此，熱交換促進構件206只要配置於能阻礙在流道201內流動之冷媒的流動的位置即可。熱交換促進構件206係使與在流道201流動之冷媒的接觸面積增加，並促進擋板20與冷媒的熱交換。藉此，可進一步提高熱回應性。又，熱交換促進構件206的形狀及配置，並不限定於上述者。Inside the flow channel 201, a plurality of heat exchange promotion members 206 are provided dispersedly. The heat exchange promotion member 206 may be rod-shaped, plate-shaped, or may have other structures (such as a lattice structure), and may be lightweight. Referring to FIG. 6( b ), the heat exchange promotion members 206 are arranged inside the flow channel 201 and are alternately arranged near the outer side and the inner side of the flow channel 201 in a staggered manner. However, the present invention is not limited to this, and the heat exchange promotion member 206 may be disposed at a position that blocks the flow of the refrigerant flowing in the flow path 201 . The heat exchange promotion member 206 increases the contact area with the refrigerant flowing in the flow path 201 and promotes heat exchange between the baffle 20 and the refrigerant. Thereby, thermal responsiveness can be further improved. In addition, the shape and arrangement of the heat exchange promotion member 206 are not limited to the above.

擋板20之本體20b與設於流道201中的熱交換促進構件206可由相同的材料構成，亦可使用不同種材料。例如，亦可在擋板本體使用鋁，在熱交換促進構件206使用熱傳導率高的金屬材料(例如Cu)。又，亦可在熱交換促進構件206使用強度高的金屬材料。The body 20b of the baffle 20 and the heat exchange promotion member 206 provided in the flow channel 201 can be made of the same material, or different materials can be used. For example, aluminum may be used for the baffle body, and a metal material with high thermal conductivity (for example, Cu) may be used for the heat exchange promotion member 206 . In addition, a high-strength metal material may be used for the heat exchange promotion member 206 .

在顯示圖6(b)之H-H線剖面的圖7(a)中，係圖式說明U型迴轉前的流道201。U型迴轉前的流道201係在擋板20之頂面的正下方，沿著頂面而形成。流道201係形成為與流道202相同高度，並且在導入口IN的位置上，流道201與流道202係略垂直地交叉。在流道202流動的冷媒係在導入口IN流入流道201。In FIG. 7(a) , which shows a cross-section along the line H-H in FIG. 6(b) , the flow path 201 before the U-turn is schematically illustrated. The flow channel 201 before the U-shaped rotation is directly below the top surface of the baffle 20 and is formed along the top surface. The flow channel 201 is formed to be at the same height as the flow channel 202, and the flow channel 201 and the flow channel 202 intersect slightly perpendicularly at the position of the inlet IN. The refrigerant flowing in the flow channel 202 flows into the flow channel 201 through the inlet IN.

在顯示圖6(b)之I-I線剖面的圖7(b)中，係圖式說明U型迴轉後的流道201。U型迴轉後的流道201係在擋板20之頂面的正下方，沿著頂面而形成，其前端係朝向排出口OUT而具有高低差，並形成為與排出口OUT相同高度。藉此，高低差前的流道201係形成在高於流道203的位置，而高低差後的流道201係形成為與流道203相同高度，在排出口OUT的位置上，流道201與流道203係略垂直地交叉。藉此，在流道201流動的冷媒係在排出口OUT合流，而較容易流入形成在低於高低差前之流道201的位置的流道203。In FIG. 7(b) , which shows a cross section along the line I-I in FIG. 6(b) , the flow channel 201 after the U-shaped rotation is schematically illustrated. The U-shaped flow channel 201 is formed directly below the top surface of the baffle 20 and along the top surface. Its front end faces the discharge port OUT, has a height difference, and is formed at the same height as the discharge port OUT. Thereby, the flow channel 201 before the height difference is formed at a higher position than the flow channel 203, and the flow channel 201 after the height difference is formed at the same height as the flow channel 203. At the position of the discharge port OUT, the flow channel 201 It intersects the flow channel 203 slightly perpendicularly. Thereby, the refrigerant flowing in the flow channel 201 merges at the discharge port OUT, and easily flows into the flow channel 203 formed at a position lower than the flow channel 201 before the height difference.

熱交換促進構件206在U型迴轉前的流道201中係比U型迴轉後的流道201中更密集地配置。藉此，使「與在U型迴轉前之流道201流動的冷媒的接觸面積」比「與在U型迴轉後之流道201流動的冷媒的接觸面積」更為增加，而促進擋板20與冷媒的熱交換。但是，藉由將熱交換促進構件206亦設於U型迴轉後的流道201，可促進擋板20與冷媒的熱交換。The heat exchange promotion members 206 are arranged more densely in the flow channel 201 before the U-turn than in the flow channel 201 after the U-turn. Thereby, the "contact area with the refrigerant flowing in the flow channel 201 before the U-shaped rotation" is increased compared with the "contact area with the refrigerant flowing in the flow channel 201 after the U-shaped rotation", thereby promoting the baffle 20 Heat exchange with refrigerant. However, by arranging the heat exchange promotion member 206 in the U-shaped flow channel 201, the heat exchange between the baffle 20 and the refrigerant can be promoted.

又，熱交換促進構件206的配置並不限定於此。例如，熱交換促進構件206亦能以相同間隔配置於整個流道201。又，熱交換促進構件206可為相同形狀，亦可為不同的形狀。又，熱交換促進構件206可在流道201內錯開地配置，亦可平行地配置，亦可為其他配置。In addition, the arrangement of the heat exchange promotion member 206 is not limited to this. For example, the heat exchange promotion members 206 can also be arranged at the same intervals throughout the flow channel 201 . In addition, the heat exchange promotion members 206 may have the same shape or may have different shapes. In addition, the heat exchange promotion members 206 may be arranged in a staggered manner in the flow channel 201, may be arranged in parallel, or may be arranged in other ways.

根據依本發明之一實施態樣之電漿處理裝置的擋門22、防沉積板23及擋板20，可藉由在流道221、231及流道201~203中流動冷媒，而對形成陽極之零件整體進行溫度控制。藉此，例如即使因射頻偏壓電力LF的高功率化，而使往擋門22、防沉積板23及擋板20等構成陽極之構件的熱輸入量增加，亦可將形成陽極之零件冷卻在既定溫度範圍。又，亦可局部地將形成陽極之零件的一部分例如擋板20、擋門22或防沉積板23控制在不同的溫度。According to the baffle 22, the anti-deposition plate 23 and the baffle 20 of the plasma processing device according to an embodiment of the present invention, the refrigerant can be flowed in the flow channels 221, 231 and the flow channels 201~203 to form The anode parts are temperature controlled as a whole. Thereby, for example, even if the amount of heat input to the anode-forming components such as the baffle 22, the anti-deposition plate 23, and the baffle 20 increases due to the increase in the power of the radio frequency bias power LF, the parts forming the anode can be cooled. within a given temperature range. In addition, a part of the components forming the anode, such as the baffle 20, the baffle 22, or the anti-deposition plate 23, can also be locally controlled at different temperatures.

關於擋板20的製造方法，係在其內部形成有流道201~203，並且具有中空構造。因此，擋板20較佳係以3D列印技術、積層製造(Additive Manufacturing)技術進行製造。具體而言，可採用使用金屬材料的積層造形技術。例如可使用以下技術：藉由對粉末金屬照射雷射或電子束使其燒結而進行造形的造形技術；及藉由一邊供給粉末金屬或金屬線，一邊以雷射或電子束使材料熔融並堆積而進行造形的造形技術等。又，該等造形方法僅為一例，本發明並不限定於上述方法。Regarding the manufacturing method of the baffle 20, the flow channels 201 to 203 are formed inside the baffle 20 and have a hollow structure. Therefore, the baffle 20 is preferably manufactured using 3D printing technology and additive manufacturing technology. Specifically, a multilayer molding technology using metal materials can be used. For example, the following techniques can be used: a molding technique in which powdered metal is irradiated with a laser or an electron beam to sinter it; and a technique in which the material is melted and deposited with a laser or an electron beam while supplying powdered metal or metal wires. And the shaping technology for shaping, etc. In addition, these molding methods are only examples, and the present invention is not limited to the above methods.

以上，雖針對基板處理裝置的實施態樣等進行說明，但本發明並非限定於上述實施態樣等，而係在申請專利範圍所記載之本發明的主旨範圍內，可進行各種變形及改良。The embodiments of the substrate processing apparatus have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the invention described in the patent claims.

本發明係以下述態樣進行說明：藉由在擋門22之流道221及防沉積板23之流道231流動冷媒，而冷卻擋門22及防沉積板23。然而，本發明並不限定於此，亦可流動高溫的冷媒而將擋門22及防沉積板23進行加溫。又，擋門22及防沉積板23亦可具備加熱器。藉此，可將擋門22及防沉積板23進行溫度控制在既定之溫度範圍。The present invention is described in an aspect in which the refrigerant flows through the flow channel 221 of the damper 22 and the flow channel 231 of the anti-sedimentation plate 23 to cool the damper 22 and the anti-sedimentation plate 23 . However, the present invention is not limited thereto. High-temperature refrigerant may also flow to heat the door 22 and the anti-deposition plate 23 . In addition, the shutter 22 and the sedimentation prevention plate 23 may be equipped with a heater. Thereby, the temperature of the door 22 and the anti-deposition plate 23 can be controlled within a predetermined temperature range.

又，本發明係舉狹縫20a作為設於擋板20之孔的例子，但本發明例如亦可應用於真圓或橢圓之圓孔等，狹縫孔以外之孔型的擋板20。In addition, the present invention takes the slit 20a as an example of the hole provided in the baffle 20, but the present invention can also be applied to the baffle 20 having hole shapes other than slit holes, such as a true circle or an elliptical hole.

依本發明之一實施態樣之電漿處理裝置可應用於以下任一類型：ALD(Atomic Layer Deposition：原子層沉積)裝置，CCP(Capacitively Coupled Plasma：電容耦合電漿)、ICP(Inductively Coupled Plasma：感應耦合電漿)、RLSA(Radial Line Slot Antenna：放射狀線槽孔天線)、ECR(Electron Cyclotron Resonance Plasma：電子迴旋共振電漿)、HWP(Helicon Wave Plasma：螺旋波激發型電漿)。又，本發明係舉電漿處理裝置作為基板處理裝置之一例而進行說明，然而，基板處理裝置只要係對基板施予既定處理(例如，成膜處理、蝕刻處理等)的裝置即可，並不限定於電漿處理裝置。例如，亦可為CVD裝置。The plasma processing device according to an embodiment of the present invention can be applied to any of the following types: ALD (Atomic Layer Deposition) device, CCP (Capacitively Coupled Plasma: Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma) : Inductively Coupled Plasma), RLSA (Radial Line Slot Antenna: Radial Line Slot Antenna), ECR (Electron Cyclotron Resonance Plasma: Electron Cyclotron Resonance Plasma), HWP (Helicon Wave Plasma: Helical Wave Excitation Plasma). In addition, the present invention has been described taking a plasma processing device as an example of a substrate processing device. However, the substrate processing device may be any device that performs predetermined processing (for example, film forming processing, etching processing, etc.) on a substrate. It is not limited to a plasma processing device. For example, it may be a CVD apparatus.

在本說明書中，係舉晶圓(半導體晶圓)W作為基板之一例而進行說明。然而，基板並不限定於此，亦可為用於LCD(Liquid Crystal Display：液晶顯示器)，FPD(Flat Panel Display：平面顯示器)之各種基板或光罩、CD基板、印刷基板等。In this specification, a wafer (semiconductor wafer) W is used as an example of a substrate and is explained. However, the substrate is not limited to this, and may also be various substrates or photomasks used in LCD (Liquid Crystal Display), FPD (Flat Panel Display), CD substrates, printed substrates, etc.

2:處理容器 2a:開口部(第一開口部) 3:絕緣板 4:支撐台 5:平台(載置台) 7:冷卻室 8:冷媒導入管 9:冷媒排出管 11:靜電夾頭 12:吸附電極 13:直流電源 14:氣體通路 15:邊緣環 20:擋板(零件) 20a:狹縫 20b:本體 22:擋門(零件) 23:防沉積板(零件) 23a:開口部(第二開口部) 24:電極板 25:電極支撐體 26:氣體導入口 27:氣體供給管 28:開閉閥 29:質量流量控制器(MFC) 30:處理氣體供給源 31:排氣管 35:排氣裝置 40:氣體噴淋頭 41:絕緣材 44:氣體擴散室 45:氣孔 51:第一射頻電源 52、54:匹配器 53:第二射頻電源 55:升降機 60:平台側面被覆構件 71,73:導入管 72,74:排出管 100:控制裝置 105:通信介面(I/F) 110:CPU 115:記憶體 201~203,221,231:流道 206,226:熱交換促進構件 221a:流出面 222:側壁部 223:勒部 224:外殼構件 225:分隔構件 227:流入路徑 228,229:流出路徑 A,B,C,D,E,F:虛線 G:區域 GV:閘門閥 HF:射頻電力 IN:導入口 OUT:排出口 LF:射頻偏壓電力 S1:電漿處理室 S2:排氣空間 W:晶圓2: Handle the container 2a: Opening (first opening) 3: Insulation board 4: Support platform 5: Platform (loading platform) 7: Cooling room 8:Refrigerant introduction pipe 9:Refrigerant discharge pipe 11:Electrostatic chuck 12: Adsorption electrode 13: DC power supply 14:Gas passage 15: Edge ring 20:Baffle (parts) 20a:Slit 20b:Ontology 22: Door stop (parts) 23: Anti-sedimentation plate (parts) 23a: Opening (second opening) 24:Electrode plate 25:Electrode support 26:Gas inlet 27:Gas supply pipe 28:Open and close valve 29:Mass flow controller (MFC) 30: Handle gas supply source 31:Exhaust pipe 35:Exhaust device 40:Gas sprinkler head 41:Insulation material 44:Gas diffusion chamber 45: pores 51:First RF power supply 52, 54: Matcher 53: Second RF power supply 55: Lift 60: Platform side covering components 71,73:Inlet pipe 72,74: Discharge pipe 100:Control device 105: Communication interface (I/F) 110:CPU 115:Memory 201~203,221,231:Flow channel 206,226: Heat exchange promotion member 221a: outflow 222: Side wall part 223:Lebu 224: Shell components 225:Separating components 227:Inflow path 228,229: Outflow path A,B,C,D,E,F: dashed line G: area GV: gate valve HF: radio frequency power IN:Inlet OUT: discharge outlet LF: RF bias power S1: Plasma processing chamber S2: Exhaust space W:wafer

圖1係顯示依本發明之一實施態樣之電漿處理裝置之一例的剖面示意圖。 圖2係顯示依本發明之一實施態樣之電漿處理裝置之擋門之一例的立體圖。 圖3係顯示依本發明之一實施態樣之電漿處理裝置之擋門之內部構造之一例的部分剖面立體圖。 圖4(a)、(b)係顯示溫度分布之模擬結果之一例的立體圖。 圖5(a)、(b)係顯示流道內之冷媒之流動的示意圖。 圖6(a)、(b)係顯示依本發明之一實施態樣之電漿處理裝置之擋板之內部構造之一部分的橫剖面圖。 圖7中(a)係顯示圖6之H-H線剖面的圖式，(b)係顯示圖6之I-I線剖面的圖式。FIG. 1 is a schematic cross-sectional view showing an example of a plasma treatment device according to an embodiment of the present invention. FIG. 2 is a perspective view showing an example of a door of a plasma processing device according to an embodiment of the present invention. 3 is a partially cross-sectional perspective view showing an example of the internal structure of a door of a plasma processing apparatus according to an embodiment of the present invention. Figures 4 (a) and (b) are perspective views showing an example of simulation results of temperature distribution. Figures 5 (a) and (b) are schematic diagrams showing the flow of refrigerant in the flow channel. 6 (a) and (b) are cross-sectional views showing a part of the internal structure of the baffle of the plasma processing apparatus according to an embodiment of the present invention. In Fig. 7, (a) is a diagram showing a cross section along line H-H in Fig. 6, and (b) is a diagram showing a cross section along line I-I in Fig. 6.

22:擋門(零件) 22: Door stop (parts)

221:流道 221:Flow channel

224:外殼構件 224: Shell components

225:分隔構件 225:Separating components

226:熱交換促進構件 226: Heat exchange promotion member

227:流入路徑 227:Inflow path

228,229:流出路徑 228,229: Outflow path

A:虛線 A:Dotted line

Claims (7)

一種基板處理裝置，包含：處理容器；載置台，配置於該處理容器的內部，用於載置基板；及零件，配置於該處理容器與該載置台之間，並形成陽極；該零件具有熱交換媒體所流動的流道；具有該流道之該零件包含：外殼構件，具有內部空間；分隔構件，在該內部空間形成該流道；及熱交換促進構件，設於該流道；該熱交換促進構件具有晶格構造，而從內側支撐該外殼構件。 A substrate processing device, including: a processing container; a mounting platform disposed inside the processing container for placing substrates; and a component disposed between the processing container and the mounting platform to form an anode; the component has a thermal The flow channel through which the exchange medium flows; the part having the flow channel includes: a shell member having an internal space; a partition member forming the flow channel in the internal space; and a heat exchange promotion member located in the flow channel; the heat The exchange promotion member has a lattice structure and supports the housing member from the inside. 如請求項1所述之基板處理裝置，其中，該處理容器包含第一開口部；該零件包含：防沉積板，在與該第一開口部對應的位置具有第二開口部；及擋門，用於開閉該第二開口部；該防沉積板及該擋門中，至少其中一者具有熱交換媒體所流動的流道。 The substrate processing apparatus of claim 1, wherein the processing container includes a first opening; the component includes: an anti-sedimentation plate having a second opening at a position corresponding to the first opening; and a blocking door, For opening and closing the second opening; at least one of the anti-sedimentation plate and the baffle door has a flow channel for the heat exchange medium to flow. 如請求項1所述之基板處理裝置，其中，該零件係設於排氣部的擋板，並具有熱交換媒體所流動的流道。 The substrate processing device according to claim 1, wherein the component is provided on the baffle of the exhaust part and has a flow channel through which the heat exchange medium flows. 如請求項1至3中任一項所述之基板處理裝置，其中，具有該流道之該零件，包含使與該熱交換媒體的接觸面積增加的熱交換促進構件。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the part having the flow channel includes a heat exchange promotion member that increases the contact area with the heat exchange medium. 如請求項1所述之基板處理裝置，其中，該外殼構件、該分隔構件及該熱交換促進構件係一體地成型。 The substrate processing apparatus according to claim 1, wherein the housing member, the partition member and the heat exchange promotion member are integrally formed. 如請求項1、2、3或5所述之基板處理裝置，其中，具有該流道之該零件係以3D列印技術或是積層製造技術成型。 The substrate processing device as claimed in claim 1, 2, 3 or 5, wherein the part with the flow channel is formed using 3D printing technology or additive manufacturing technology. 一種基板處理裝置，包含：處理容器；載置台，配置於該處理容器內，用於載置基板；及零件，配置於該處理容器內，並形成陽極；該零件具有熱交換媒體所流動的流道；具有該流道之該零件包含：外殼構件，具有內部空間；分隔構件，在該內部空間形成該流道；及熱交換促進構件，設於該流道；該熱交換促進構件具有晶格構造，而從內側支撐該外殼構件。 A substrate processing device includes: a processing container; a mounting table disposed in the processing container for placing substrates; and a component disposed in the processing container to form an anode; the component has a flow through which a heat exchange medium flows channel; the part with the flow channel includes: a shell member having an internal space; a partition member forming the flow channel in the internal space; and a heat exchange promotion member located in the flow channel; the heat exchange promotion member has a crystal lattice construction, while supporting the shell member from the inside.
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