JP7278172B2 - Substrate processing equipment - Google Patents

Description

The present disclosure relates to a substrate processing apparatus.

For example, there is known a substrate processing apparatus that performs a predetermined process on a substrate such as a wafer.

Patent Document 1 discloses a cylindrical chamber having an opening, a deposit shield disposed along the inner wall of the chamber and having an opening at a position corresponding to the opening of the chamber, and an opening of the deposit shield that opens and closes. A substrate processing apparatus is disclosed that includes a shutter.

JP 2015-126197 A

In one aspect, the present disclosure provides a substrate processing apparatus with improved thermal responsiveness.

In order to solve the above problems, according to one aspect, there is provided a processing container, a mounting table arranged inside the processing container on which a substrate is mounted, and a mounting table arranged between the processing container and the mounting table. and a component forming an anode, said component having a flow path through which a heat exchange medium flows.

According to one aspect, it is possible to provide a substrate processing apparatus with improved thermal responsiveness.

BRIEF DESCRIPTION OF THE DRAWINGS The cross-sectional schematic diagram which shows an example of the plasma processing apparatus which concerns on one Embodiment. The perspective view which shows an example of the shutter of the plasma processing apparatus which concerns on one Embodiment. FIG. 2 is a partial cross-sectional perspective view showing an example of the internal structure of the shutter of the plasma processing apparatus according to one embodiment; The perspective view which shows an example of the simulation result of temperature distribution. FIG. 4 is a schematic diagram showing the flow of coolant in the channel; FIG. 4 is a cross-sectional view showing part of the internal structure of the baffle plate of the plasma processing apparatus according to one embodiment; FIG. 7(a) shows the HH section of FIG. 6, and FIG. 7(b) shows the II section of FIG. 6;

Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and redundant description may be omitted.

[Plasma processing equipment]
First, a plasma processing apparatus (substrate processing apparatus) according to one embodiment will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing an example of a plasma processing apparatus according to one embodiment.

The plasma processing apparatus performs predetermined processing (for example, etching processing, film forming processing, cleaning processing, ashing processing, etc.) on a substrate such as a wafer W.

The plasma processing apparatus has a substantially cylindrical processing vessel 2 made of, for example, aluminum whose surface is anodized. The processing container 2 is grounded.

A substantially cylindrical support 4 is provided at the bottom of the processing container 2 with an insulating plate 3 made of ceramics or the like interposed therebetween. A stage 5 that holds the wafer W and also functions as a lower electrode is provided on the support table 4 . The stage 5 is also called a mounting table.

A cooling chamber 7 is provided inside the support table 4 . A coolant is introduced into the cooling chamber 7 via a coolant introduction pipe 8 . The coolant circulates in the cooling chamber 7 and is discharged from the coolant discharge pipe 9 . A gas passage 14 for supplying a heat transfer medium (for example, He gas) is formed in the insulating plate 3, the support table 4, the stage 5, and the electrostatic chuck 11 to the rear surface of the wafer W. Cold heat from the stage 5 is transmitted to the wafer W via the medium, and the wafer W is maintained at a predetermined temperature.

A circular electrostatic chuck 11 having approximately the same diameter as the wafer W is provided on the upper central portion of the stage 5 . The electrostatic chuck 11 has an attraction electrode 12 arranged between insulating materials. A DC power supply 13 is connected to the attraction electrode 12 , and when a DC voltage is applied from the DC power supply 13 , the wafer W is electrostatically attracted to the electrostatic chuck 11 by Coulomb force.

An annular edge ring (also referred to as a focus ring) 15 is arranged on the upper peripheral edge of the stage 5 so as to surround the wafer W placed on the electrostatic chuck 11 . The edge ring 15 is made of a conductive material such as silicon, and has the effect of improving plasma uniformity. A side surface of the stage 5 is covered with a stage side surface covering member 60 .

A gas shower head 40 is provided above the stage 5 . The gas shower head 40 is provided facing the stage 5 which functions as a lower electrode, and also functions as an upper electrode. The gas shower head 40 is supported on the ceiling of the processing container 2 via an insulating material 41 . The gas showerhead 40 has an electrode plate 24 and an electrode support 25 made of a conductive material that supports the electrode plate 24 . The electrode plate 24 is made of a conductor or semiconductor such as silicon or SiC, and has a large number of gas holes 45 . The electrode plate 24 forms a surface facing the stage 5 .

A gas inlet 26 is provided in the center of the electrode support 25 , and a gas supply pipe 27 is connected to the gas inlet 26 . A processing gas supply source 30 is connected to the gas supply pipe 27 via an on-off valve 28 and a mass flow controller (MFC) 29 . The processing gas supply source 30 supplies a processing gas for plasma processing such as etching, a cleaning gas for cleaning processing, and the like. The gas is controlled in flow rate by a mass flow controller (MFC) 29 and carried to the gas diffusion chamber 44 through the gas supply pipe 27 and the gas introduction port 26 according to the opening and closing of the on-off valve 28 . The gas diffuses in the gas diffusion chamber 44 and is introduced into the processing chamber 2 through many gas holes 45 .

A deposition shield 23 is detachably provided on the inner wall of the processing vessel 2 to prevent reaction products generated during plasma processing such as etching from adhering to the processing vessel 2 . Depot shield 23 is grounded. Also, the deposit shield 23 may be provided in the exhaust space S<b>2 on the outer peripheral side of the support table 4 and the stage 5 .

An annular baffle plate 20 is provided between the deposit shield 23 and the stage 5 . For the deposit shield 23 and the baffle plate 20, an aluminum material coated with ceramics such as alumina or _yttria ( _Y2O3 ) can be preferably used.

The baffle plate 20 has the function of adjusting the gas flow and uniformly exhausting the gas from the plasma processing chamber S1 to the exhaust space S2. The plasma processing chamber S1 is a plasma generation space (plasma processing space) formed by the stage 5, the gas shower head 40, the deposit shield 23 and the baffle plate 20. FIG. Inside the plasma processing chamber S1, predetermined plasma is generated from the gas supplied from the gas shower head 40, and the wafer W is subjected to predetermined processing by the plasma.

A part of the plasma processing chamber S1 can be opened and closed by a shutter 22 . That is, the processing container 2 is provided with an opening 2a for carrying the wafer W into and out of the plasma processing chamber S1. A side wall of the processing container 2 is provided with a gate valve GV for opening and closing the opening 2a. Further, the deposit shield 23 is provided with an opening 23a at a position corresponding to the opening 2a. The shutter 22 is vertically driven by a lifter 55 to open and close the opening 23a. The shutter 22 is grounded. When loading and unloading the wafer W, the gate valve GV is opened, the shutter 22 is lowered by driving the lifter 55 to open the shutter 22, and the wafer W is loaded into the plasma processing chamber S1 through the opening of the shutter 22. The wafer W is unloaded from S1.

Inside the shutter 22, a flow path 221 (also see FIG. 3 to be described later) through which a coolant (heat exchange medium) flows is provided. Refrigerant is introduced into flow path 221 via introduction pipe 71 . The coolant circulates through the flow path 221 and is discharged from the discharge pipe 72 . Further, inside the deposit shield 23, a channel 231 through which a coolant flows is provided. Refrigerant is introduced into flow path 231 via introduction pipe 73 . The coolant circulates through the flow path 231 and is discharged from the discharge pipe 74 . A flow meter for detecting the flow rate of the refrigerant, a regulator for adjusting the flow rate of the refrigerant, and the like may be provided. The control device 100, which will be described later, controls the flow rate of the coolant supplied to the flow path 221 according to the amount of heat input from the plasma in the plasma processing chamber S1 to the shutter 22. FIG. Thereby, the temperature of the shutter 22 can be set within a desired temperature range. Similarly, the control device 100 controls the flow rate of the coolant supplied to the flow path 231 according to the amount of heat input from the plasma in the plasma processing chamber S1 to the deposit shield 23 . As a result, the temperature of the deposit shield 23 can be set within a desired temperature range. The type of refrigerant is not limited, and may be, for example, gas such as dry air or liquid such as cooling water.

An exhaust space S2 for exhausting is formed under the baffle plate 20 on the lower side of the plasma processing chamber S1. As a result, plasma can be prevented from entering the exhaust space S<b>2 on the downstream side of the baffle plate 20 .

The first high frequency power supply 51 generates high frequency power HF for plasma generation. The first high frequency power supply 51 generates high frequency power HF with a frequency of 60 MHz, for example. A first high-frequency power supply 51 is connected to the gas showerhead 40 via a matching device 52 . The matching device 52 is a circuit for matching the output impedance of the first high-frequency power supply 51 and the input impedance on the load side (upper electrode side).

A second high-frequency power supply 53 generates high-frequency bias power LF for attracting ions to the wafer W. FIG. The second high frequency power supply 53 generates high frequency bias power LF with a frequency of 20 MHz, for example. A second high-frequency power supply 53 is connected to the stage 5 via a matching box 54 . The matching device 54 is a circuit for matching the output impedance of the second high-frequency power supply 53 and the input impedance on the load side (lower electrode side).

An exhaust pipe 31 is connected to the bottom of the processing container 2 , and an exhaust device 35 is connected to the exhaust pipe 31 . The evacuation device 35 has a vacuum pump such as a turbo-molecular pump, and can evacuate the inside of the processing container 2 to a predetermined reduced-pressure atmosphere. A gate valve GV is provided on the side wall of the processing container 2, and the wafer W is carried in and out of the processing container 2 by opening and closing the gate valve GV.

The plasma processing apparatus is controlled by a controller 100 . The control device 100 is a computer including a communication interface (I/F) 105, a CPU 110, a memory 115, and the like. The memory 115 stores a control program for controlling various plasma processes such as etching performed in the plasma processing apparatus by the CPU 110, and a program for causing each part of the plasma processing apparatus to perform processing according to processing conditions. , where recipes are stored. The CPU 110 uses recipes and control programs stored in the memory 115 to operate each part of the plasma processing apparatus (lifter 55, exhaust device 35, DC power supply 13, first high frequency power supply 51, second high frequency power supply 53, processing gas source 30).

Next, the shutter 22 and deposit shield 23 having flow paths 221 and 231 will be further described with reference to FIGS. 2 and 3. FIG. In addition, in the following description, the shutter 22 having the channel 221 will be described as an example. The structure of the flow path 231 of the deposit shield 23 is also the same as the structure of the flow path 221 of the shutter 22, and redundant description will be omitted.

FIG. 2 is a perspective view showing an example of the shutter 22 of the plasma processing apparatus according to one embodiment. FIG. 3 is a partial cross-sectional perspective view showing an example of the internal structure of the shutter 22 of the plasma processing apparatus according to one embodiment. In addition, FIG. 3 is a view of the side wall portion 222 facing the plasma processing chamber S1.

As shown in FIG. 2 , the shutter 22 has side walls 222 and ribs 223 . The side wall portion 222 is a member that closes the opening 23 a of the deposit shield 23 and is curved in an arc along the shape of the cylindrical deposit shield 23 . The rib 223 is formed so as to extend toward the center of the processing container 2 from the lower end side of the side wall portion 222 . The bottom side of the rib 223 is supported by the lifter 55 . The upper surface of the rib 223 may contact the deposit shield 23 when the shutter 22 closes the opening 23a. Also, the upper end of the side wall portion 222 may contact the deposition shield 23 . Thereby, the deposit shield 23 and the shutter 22 are electrically connected, and the shutter 22 is grounded.

As shown in FIG. 3 , a channel 221 through which a coolant flows is formed inside a side wall portion 222 of the shutter 22 . In other words, the shutter 22 includes an outer shell member 224 that has a space inside and forms an outer shell, a partition member 225 that is disposed inside the outer shell member 224 and forms the flow path 221 , and is disposed in the flow path 221 . and a heat exchange promoting member 226 .

The outer shell member 224 is formed with an inflow passage 227 and outflow passages 228 and 229 that communicate the internal space with the outside. In the example shown in FIG. 3, an inflow passage 227 is formed at the center and lower side in the circumferential direction, and outflow passages 228 and 229 are formed at the outer and lower side in the circumferential direction.

The partition member 225 is arranged inside the outer shell member 224 and forms a flow path 221 leading from the inflow path 227 to the outflow paths 228 and 229 . In FIG. 3, one end of the flow path 221 communicates with the inflow path 227, and the flow path 221 is illustrated as being branched in the middle of the flow path 221 and formed outward in the circumferential direction while reciprocating up and down. there is Also, although the other end of the flow path 221 is illustrated as being formed to communicate with the outflow paths 228 and 229, it is not limited to this.

The heat exchange promoting member 226 is provided inside the flow path 221 formed by the outer shell member 224 and the partition member 225 . In other words, the heat exchange promoting member 226 is arranged so as to block the flow of the coolant flowing through the channel 221 . The heat exchange promoting member 226 increases the contact area with the refrigerant flowing through the flow path 221 and promotes heat exchange between the shutter 22 and the refrigerant. Also, the heat exchange promoting member 226 supports the outer shell member 224 from the inside. Thereby, the strength and rigidity of the shutter 22 having a hollow structure can be ensured. The heat exchange promoting member 226 may have, for example, a mesh-like or columnar structure, or may have a lattice structure. Note that the shape and arrangement of the heat exchange promoting member 226 are not limited to these.

Although not shown, the rib 223 has a space inside, and the internal space has a mesh structure, a columnar structure, a lattice structure (a lattice structure), a honeycomb structure, or the like to reduce weight while ensuring strength and rigidity. You may have a structure.

FIG. 4 is a perspective view showing an example of a simulation result of the temperature distribution of the coolant inside the flow path 221. As shown in FIG. FIG. 5 is a schematic diagram showing the flow of coolant in the flow path 221. As shown in FIG. 4(a) and 5(a) show the case where the heat exchange promoting member 226 is provided in the flow path 221, and FIGS. 4(b) and 5(b) show the heat exchange promoting member 226 is not provided. In addition, in the simulation result of FIG. 4, the higher the temperature, the darker the hatching. In FIG. 5, arrows indicate the flow of the coolant.

The heat input from the plasma processing chamber S1 to the shutter 22 was set to 1 W/m ² , and dry air was used as the coolant, and the temperature distribution of the coolant when flowing from the inflow path 227 to the outflow paths 228 and 229 was simulated. In addition, as shown in FIG. 3, since the flow path 221 has a symmetrical shape, only one side of the flow path 221 was simulated. FIG. 4 shows simulation results in the region indicated by the dashed line A in FIG.

As shown in FIG. 4B, it was confirmed that the coolant temperature on the outflow surface 221a was higher than the coolant temperature on the inflow surface by flowing the coolant through the flow path 221. As shown in FIG. Specifically, the temperature of the coolant on the outflow surface 221a increased by up to 0.2° C. than the temperature of the coolant on the inflow surface. In other words, it was confirmed that the shutter 22 could be cooled.

Further, as shown in FIG. 4A, by disposing the heat exchange promoting member 226 in the flow path 221, the temperature of the refrigerant at the outflow surface 221a is higher than in the example shown in FIG. 4B. I was able to confirm that. Specifically, the temperature of the coolant on the outflow surface 221a increased by a maximum of 0.43° C. than the temperature of the coolant on the inflow surface. That is, it was confirmed that the heat exchange performance between the shutter 22 and the refrigerant was improved by arranging the heat exchange promoting member 226 in the flow path 221 .

In addition, in the corner region indicated by the dashed line C in FIG. 4(b), there is formed a region where the temperature of the coolant is high. As shown in FIG. 5(b), when the coolant flows from the inflow channel 227 into the channel 221, the coolant mainly flows through the approximate center of the channel 221, and a vortex is generated in the area indicated by the dashed line E. As shown in FIG. In the area indicated by the dashed line F between the vortex flow and the corner of the flow path 221, stagnation of the refrigerant occurs. The temperature of the coolant in this corner rises by exchanging heat with the shutter 22 . In addition, the stagnation makes it difficult for the water to flow toward the outflow surface 221a. Therefore, as shown in FIG. 4(b), a region where the temperature of the coolant becomes high is formed in the region of the corner indicated by the dashed line C. As shown in FIG.

On the other hand, by arranging the heat exchange promoting member 226 in the flow path 221, as shown in FIG. 5A, a rectifying effect is exhibited. That is, as shown in FIG. 5A, the heat exchange promoting member 226 is arranged so as to block the flow of the refrigerant. Thereby, the flow of the refrigerant in the flow path 221 is branched by the heat exchange promoting member 226 . The branched coolant is also supplied to the corner regions indicated by dashed lines D. As shown in FIG. Then, the coolant supplied to the corner region flows toward the outflow surface 221a. As shown in FIG. 4(a). In the area of the corner indicated by the dashed line B, the area where the temperature of the coolant becomes high is eliminated.

As described above, the plasma processing apparatus according to one embodiment has the shutter 22 having the channel 221 and the deposition shield 23 having the channel 231 , and the coolant flows through the channels 221 and 231 .

By the way, as the device structure of the wafer W becomes finer and more highly integrated, contact holes and the like are becoming higher in aspect. Therefore, in high aspect ratio etching, the high frequency bias power LF is becoming lower and higher. Therefore, the potential difference between the shutter 22 and deposit shield 23, which are at the ground potential, and the plasma increases. Increased and accelerated wear due to ion sputtering and increased heat input from the plasma increase the temperature of parts (deterioration of temperature controllability).

On the other hand, according to the shutter 22 and deposit shield 23 of the plasma processing apparatus according to one embodiment, the temperature can be controlled by flowing the coolant through the channels 221 and 231 . As a result, for example, even if the amount of heat input to the shutter 22 and the deposit shield 23 increases due to an increase in the power of the high-frequency bias power LF, the shutter 22 and the deposit shield 23 can be cooled to a predetermined temperature range. can.

Moreover, since the shutter 22 and the deposit shield 23 can have a hollow structure, they can be lighter than a solid shutter and deposit shield. Reducing the weight of the shutter 22 and deposit shield 23 also reduces the heat capacity. As a result, thermal responsiveness is improved when the temperature of the shutter 22 and the deposit shield 23 is controlled by flowing the coolant through the channels 221 and 231 . Therefore, the shutter 22 and the deposit shield 23 can be brought to the target temperature range quickly, and the productivity of substrate processing by the plasma processing apparatus is also improved.

Further, when performing maintenance of the plasma processing apparatus, for example, the deposition shield 23 is taken out from the processing vessel 2. By reducing the weight of the deposition shield 23, workability can be improved. Further, by reducing the weight of the shutter 22, which is a movable member, the output of the lifter 55 can be reduced. Moreover, the material cost of the shutter 22 and the deposit shield 23 can be reduced.

Further, by providing the heat exchange promoting member 226 in the flow paths 221, 231, the contact area with the refrigerant flowing through the flow paths 221, 231 is increased, thereby improving the heat exchange performance. In addition, the flow of the refrigerant that separates and re-adheres is formed on the downstream side of the heat exchange promoting member 226 arranged as an obstruction in the flow path 221, thereby improving the heat exchange performance. As a result, thermal responsiveness is improved when the temperature of the shutter 22 and the deposit shield 23 is controlled by flowing the coolant through the channels 221 and 231 . In addition, by providing the heat exchange promoting member 226 in the flow paths 221 and 231, as shown in FIG. 5A and FIG. do. Thereby, the uniformity of the temperature distribution of the shutter 22 and the deposit shield 23 can be improved.

Further, the strength and rigidity of the shutter 22 and deposit shield 23 can be ensured by forming the heat exchange promoting member 226 inside the passages 221 and 231 of hollow structure.

As shown in FIG. 1, the description has been made assuming that the flow path is provided in the shutter 22 and the deposit shield 23, but the present invention is not limited to this. may be

For example, the configuration may be such that the flow path 231 is provided only in the deposit shield 23 . The deposit shield 23 has a substantially cylindrical shape and is arranged so as to surround the entire plasma processing chamber S1. On the other hand, the shutter 22 is arranged in a part of the approximately cylindrical shape. Therefore, by providing the flow path 231 in the deposition shield 23, it is arranged so as to surround the entire plasma processing chamber S1.

Alternatively, for example, the configuration may be such that the flow path 221 is provided only in the shutter 22 . The deposit shield 23 is in contact with other members such as the processing vessel 2, and the heat input from the plasma processing chamber S1 is radiated to the other members. On the other hand, since the shutter 22 is a movable member, compared with the deposit shield 23, it contacts less with other members and radiates less heat to other members. Therefore, the temperature of the shutter 22 may become higher than the temperature of the deposit shield 23 . On the other hand, by providing the flow path 221 in the shutter 22 , for example, the temperature of the shutter 22 can be matched with the temperature of the deposit shield 23 . This improves the uniformity of the temperature in the plasma processing chamber S1.

Next, a method of manufacturing the shutter 22 and the deposit shield 23 will be described. The shutter 22 and the deposit shield 23 have flow paths 221 and 231 formed therein and have a hollow structure. For this reason, the shutter 22 and deposit shield 23 are preferably manufactured by 3D printer technology and additive manufacturing technology. Specifically, a layered manufacturing technique using a metal material can be used. For example, molding technology that sinters powder metal by sintering it with a laser or electron beam, molding technology that melts and deposits materials with a laser or electron beam while supplying powder metal or wire, etc. can be used. It should be noted that these modeling methods are examples and are not limited to these.

In the shutter 22 and the deposit shield 23, the outer shell member 224 constituting the outer shell, the partition member 225 for forming the flow path 221, and the heat exchange promoting member 226 provided in the flow path 221 are made of the same material. was described as consisting of However, it is not limited to this, and different materials may be used. For example, the outer shell member 224 and the partition member 225 may be made of aluminum, and the heat exchange promoting member 226 may be made of a metal material with high thermal conductivity (eg, Cu). Also, a high-strength metal material may be used for the heat exchange promoting member 226 .

The shutter 22 and the deposit shield 23 described above are an example of a component that is arranged between the processing container 2 and the stage 5, has a channel through which a heat exchange medium flows, and forms an anode.

The stage 5 is a member that forms a cathode, and components that form an anode facing the member that forms the cathode include the shutter 22 and deposit shield 23 as well as the upper electrode (gas shower head 40 ) and the baffle plate 20 .

[Baffle plate]
The baffle plate 20, which is another example of the component forming the anode, will be described below with reference to FIGS. 6 and 7. FIG. FIG. 6 is a cross-sectional view showing part of the internal structure of the baffle plate 20 of the plasma processing apparatus according to one embodiment. 7(a) shows the HH section of FIG. 6(b), and FIG. 7(b) shows the II section of FIG. 6(b).

The baffle plate 20 is formed in an annular shape. FIG. 6(a) shows a part of the cross section when the baffle plate 20 is cut in the horizontal direction. 6(b) is an enlarged view of the region G in FIG. 6(a). The baffle plate 20 has a plurality of slits 20a. All of the plurality of slits 20a are the same and arranged substantially parallel. Each of the plurality of slits 20a has a longitudinal direction in the width direction of the baffle plate 20, and is arranged at equal pitches in the circumferential direction. Each slit 20 a penetrates through the baffle plate 20 .

Channels 201 are formed inside the baffle plate 20 between the slits 20a. The flow path 201 has both ends in the vicinity of the inner ends of the slits 20a, one end of which serves as an inlet IN and the other end serves as an outlet OUT. Further, the channel 201 is formed to make a U-turn outside the outer end of each slit 20a. In other words, the channel 201 is formed in a U shape along each slit 20a and meanders between the plurality of slits 20a. Inside the baffle plate 20, two ring-shaped flow paths 202 and 203 are formed inside each slit 20a.

The U-shaped channel 201 described above is connected to the channel 202 at the inlet IN at one end, and is connected to the channel 203 at the outlet OUT at the other end. Refrigerant output from a chiller unit (not shown) flows through the flow path 202 and is divided into a plurality of flow paths 201 at a plurality of inlets IN. The branched refrigerant flows through flow paths 201 formed around each slit 20a, joins flow paths 203 at a plurality of outlets OUT, and returns to the chiller unit again. As a result, the temperature of the entire baffle plate 20 can be controlled by causing the coolant to flow in the order of flow path 202→flow path 201→flow path 203, thereby improving thermal responsiveness.

Note that the direction of the coolant flowing through the flow paths 202 and 203 is not limited to the direction shown in FIG. 6B. Further, the shape of the flow paths 201 to 203 formed by making the baffle plate 20 hollow is not limited to this. For example, the inlet IN and the outlet OUT may be reversed, and the refrigerant output from the chiller unit may flow in the order of channel 203 →channel 201 →channel 202 . The flow paths 201 to 203 may be provided with a flow meter for detecting the flow rate of the refrigerant, a regulator for adjusting the flow rate of the refrigerant, and the like.

Further, the flow path 201 is not limited to being provided around all the slits 20a of the baffle plate 20. FIG. For example, the flow path 201 may be provided so as to surround two or more adjacent slits 20a among the plurality of slits 20a, or may be provided at a position having symmetry with respect to the center of the baffle plate 20. good too. Further, the channel 202 and/or the channel 203 may be provided inside the inner peripheral edge of the slit 20a. Moreover, the flow path may be provided outside the outer peripheral edge of the slit 20a, or the flow paths described above may be combined. However, in order to improve temperature controllability and thermal responsiveness, it is preferable that the flow paths 201 are arranged at regular intervals and arranged as densely as possible.

Inside the flow path 201, a plurality of heat exchange promoting members 206 are provided in a scattered manner. The heat exchange promoting member 206 may be rod-shaped, plate-shaped, or have another structure (for example, a lattice structure) to reduce weight. Referring to FIG. 6( b ), the heat exchange promoting members 206 are alternately arranged near the outer surface and the inner surface of the channel 201 so as to alternate within the channel 201 . However, the present invention is not limited to this, and the heat exchange promoting member 206 may be arranged at a position that hinders the flow of the coolant flowing through the flow path 201 . The heat exchange promoting member 206 increases the contact area with the refrigerant flowing through the flow path 201 and promotes heat exchange between the baffle plate 20 and the refrigerant. Thereby, thermal responsiveness can be further improved. Note that the shape and arrangement of the heat exchange promoting member 206 are not limited to these.

The main body 20b of the baffle plate 20 and the heat exchange promoting member 206 provided in the flow path 201 may be made of the same material, or different materials may be used. For example, aluminum may be used for the baffle plate main body, and a metal material with high thermal conductivity (for example, Cu) may be used for the heat exchange promoting member 206 . Also, a high-strength metal material may be used for the heat exchange promoting member 206 .

FIG. 7(a) showing the HH section of FIG. 6(b) shows the flow path 201 before the U-turn. The channel 201 before the U-turn is formed directly below the upper surface of the baffle plate 20 along the upper surface. The channel 201 is formed at the same height as the channel 202, and the channel 201 and the channel 202 intersect substantially perpendicularly at the position of the inlet IN. The coolant flowing through flow path 202 flows into flow path 201 at inlet IN.

FIG. 7(b) showing the II cross section of FIG. 6(b) shows the flow path 201 after the U-turn. The channel 201 after the U-turn is formed along the upper surface of the baffle plate 20 immediately below the upper surface, and has a step toward the outlet OUT at the same height as the outlet OUT. As a result, the flow path 201 before the step is formed at a position higher than the flow path 203, the flow path 201 after the step is formed at the same height as the flow path 203, and the flow path 201 is formed at the position of the outlet OUT. and the channel 203 intersect substantially perpendicularly. This makes it easier for the coolant flowing through the flow path 201 to join at the outlet OUT and flow into the flow path 203 formed at a position lower than the flow path 201 before the step.

The heat exchange promoting members 206 are arranged more densely in the flow path 201 before the U-turn than in the flow path 201 after the U-turn. As a result, the contact area with the refrigerant flowing through the flow path 201 before the U-turn is increased compared to the flow path 201 after the U-turn, thereby promoting heat exchange between the baffle plate 20 and the refrigerant. However, heat exchange between the baffle plate 20 and the refrigerant is promoted by providing the heat exchange promoting member 206 also in the flow path 201 after the U-turn.

Note that the arrangement of the heat exchange promoting member 206 is not limited to this. For example, the heat exchange promoting members 206 may be arranged at equal intervals throughout the flow path 201 . Also, the heat exchange promoting members 206 may have the same shape or different shapes. Also, the heat exchange promoting members 206 may be alternately arranged in the flow path 201, may be arranged in parallel, or may be arranged in another arrangement.

According to the shutter 22, the deposit shield 23, and the baffle plate 20 of the plasma processing apparatus according to one embodiment, by flowing the coolant through the channels 221, 231 and the channels 201 to 203, the entire parts forming the anode are heated to can be controlled. As a result, for example, even if the amount of heat input to the members forming the anode such as the shutter 22, the deposit shield 23, and the baffle plate 20 increases due to the increase in the power of the high-frequency bias power LF, the parts forming the anode can be maintained at a predetermined level. It can be cooled to a temperature range. It is also possible to locally control the temperature of some of the parts forming the anode, such as the baffle plate 20, the shutter 22, and the deposition shield 23, to different temperatures.

As for the manufacturing method of the baffle plate 20, the flow paths 201 to 203 are formed in the inside of the baffle plate 20 to form a hollow structure. Therefore, the baffle plate 20 is preferably manufactured by 3D printer technology and additive manufacturing technology. Specifically, a layered manufacturing technique using a metal material can be used. For example, molding technology that sinters powder metal by sintering it with a laser or electron beam, molding technology that melts and deposits materials with a laser or electron beam while supplying powder metal or wire, etc. can be used. It should be noted that these modeling methods are examples and are not limited to these.

Although the embodiments and the like of the substrate processing apparatus have been described above, the present disclosure is not limited to the above-described embodiments and the like. Improvements are possible.

It has been described that the shutter 22 and the deposit shield 23 are cooled by flowing the coolant through the flow path 221 of the shutter 22 and the flow path 231 of the deposit shield 23 . However, it is not limited to this, and the shutter 22 and the deposit shield 23 may be heated by flowing a high-temperature coolant. Moreover, the shutter 22 and the deposit shield 23 may be provided with a heater. Thereby, the temperature of the shutter 22 and the deposit shield 23 can be controlled so as to be within a predetermined temperature range.

In addition, although the slit 20a is used as an example of the hole provided in the baffle plate 20, the present invention can also be applied to the baffle plate 20 with holes other than slit holes, such as perfect circular or elliptical circular holes. be.

The plasma processing apparatus according to one embodiment includes an ALD (Atomic Layer Deposition) apparatus, Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), Helicon Wave Plasma (HWP) ) are applicable. Further, the plasma processing apparatus has been described as an example of the substrate processing apparatus. It is not limited to devices. For example, it may be a CVD apparatus.

In this specification, a wafer (semiconductor wafer) W has been described as an example of the substrate. However, the substrate is not limited to this, and may be various substrates used in LCDs (Liquid Crystal Displays) and FPDs (Flat Panel Displays), photomasks, CD substrates, printed substrates, and the like.

2 processing container 2a opening (first opening)
5 stage (mounting table)
20 baffle plate (parts)
20a slit 22 shutter (component)
23 Depot shield (Parts)
23a opening (second opening)
71, 73 Inlet pipes 72, 74 Exhaust pipe S1 Plasma processing chamber S2 Exhaust space 201 to 203 Channels 221, 231 Channel 221a Outflow surface 222 Side wall 223 Rib 224 Outer shell member 225 Partition members 206, 226 Heat exchange promoting member 227 Inflow path 228, 229 Outflow path

Claims (5)

a processing vessel;
a mounting table disposed inside the processing container on which the substrate is mounted;
a part that is disposed between the processing container and the mounting table and forms an anode;
The component has a flow path through which a heat exchange medium flows,
The component having the flow path has an outer shell member having an internal space, a partition member forming the flow path in the internal space, and a heat exchange promoting member provided in the flow path. Device. The processing container has a first opening,
The component includes a deposit shield having a second opening at a position corresponding to the first opening;
A shutter that opens and closes the second opening,
At least one part of the deposit shield and the shutter has a channel through which the heat exchange medium flows,
The substrate processing apparatus according to claim 1. The part is a baffle plate provided in the exhaust part, and has a flow path through which the heat exchange medium flows,
The substrate processing apparatus according to claim 1. 4. The substrate processing apparatus according to claim 1 , wherein said heat exchange promoting member supports said outer shell member. 5. The substrate processing apparatus according to claim 1, wherein said outer shell member, said partition member, and said heat exchange promoting member are integrally molded.

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