JP2022548648A - Clean isolation valve for reduced dead volume - Google Patents

Abstract

Gas distribution apparatus, process chambers, and methods of using dead-volume-free valves are described. The valve has a first suction line with an upstream end and a downstream end, and a second suction line with a downstream end that connects to the first suction line. A sealing surface at the downstream end of the second suction line separates the first suction line from the second suction line and prevents fluid communication between the first suction line and the second suction line. [Selection drawing] Fig. 5

Description

Embodiments of the present disclosure generally relate to isolation valves. In particular, embodiments of the present disclosure relate to isolation valves for semiconductor manufacturing with reduced dead volume.

Gas flow paths containing various valves are common in the semiconductor manufacturing industry. Current flow path configurations have dead volumes that require purging to prevent process gas from flowing back into the clean gas manifold. This is especially important when reactant gases are employed to prevent gas phase reactions in the gas lines. Reaction products can damage equipment by causing chemical reactions or clogging.

Additionally, residues left in the process line from gas phase reactions can have a significant adverse effect on subsequent processes. Residues can react with subsequent gases or process conditions to produce unwanted products. The residue can also enter the process space, form particulates on the substrate, and damage the device being manufactured. Manufacturing equipment must undergo extensive maintenance to remove and replace clogged lines and valves, leading to significant downtime and loss of throughput.

Therefore, what is needed is an apparatus and method for minimizing dead volume and/or preventing backflow during semiconductor manufacturing.

One or more embodiments of the present disclosure are directed to a gas distribution apparatus that includes a valve with a first inlet line and a second inlet line. The first suction line has an upstream end and a downstream end that define the length of the first suction line. The second suction line has an upstream end and a downstream end that define the length of the second suction line. The downstream end of the suction line connects with the first suction line along the length of the first suction line. A sealing surface is at the downstream end of the second suction line. The sealing surface is configured to separate the first and second suction lines to prevent fluid communication between the first and second suction lines.

Additional embodiments of the present disclosure are directed to a processing chamber comprising a gas distribution apparatus having a valve with a first suction line and a second suction line. The first suction line has an upstream end and a downstream end that define the length of the first suction line. The second suction line has an upstream end and a downstream end that define the length of the second suction line. The downstream end of the suction line connects with the first suction line along the length of the first suction line. A sealing surface is at the downstream end of the second suction line. The sealing surface is configured to separate the first and second suction lines to prevent fluid communication between the first and second suction lines. A gas distribution plate is in fluid communication with the second end of the first suction line. The gas distribution plate has a front face with a plurality of apertures through which gas flow is allowed to pass through the gas distribution plate. A spacer surrounds the gas distribution plate. Spacers are in openings in the top of the processing chamber. A substrate support is inside the processing chamber and has a support surface spaced a distance from the front surface of the gas distribution plate.

A further embodiment of the present disclosure is directed to a processing method that includes flowing a first gas through a first intake line of a non-dead volume valve into a processing chamber. The dead volume free valve comprises a first suction line and a second suction line. The first suction line has an upstream end and a downstream end that define the length of the first suction line. The second suction line has an upstream end and a downstream end that define the length of the second suction line. The downstream end of the suction line connects with the first suction line along the length of the first suction line. A sealing surface is at the downstream end of the second suction line. The sealing surface is configured to separate the first and second suction lines to prevent fluid communication between the first and second suction lines. A second gas is flowed into the processing chamber through a second inlet line of the non-dead volume valve. The first gas does not flow into the second intake line. Switching between the first gas and the second gas does not include a purge step to remove residual gas from the valve.

So that the features of the disclosure set forth above may be understood in detail, the more detailed description of the disclosure, briefly summarized above, is set forth in the embodiments, some of which are illustrated in the accompanying drawings. can be obtained by referring to However, as the disclosure is capable of other equally effective embodiments, the attached drawings show only general embodiments of the disclosure and should therefore be considered to limit the scope of the disclosure. Note that it is not

[0014] Figure 2 illustrates a cross-sectional isometric view of a processing chamber, in accordance with one or more embodiments of the present disclosure; [0014] Figure 2 illustrates a cross-sectional view of a processing chamber, in accordance with one or more embodiments of the present disclosure; 2 is an exploded cross-sectional view of a processing station, according to one or more embodiments of the present disclosure; FIG. 1 is a schematic representation of a processing platform, according to one or more embodiments of the present disclosure; 1 is a schematic representation of a gas distribution apparatus with no dead volume valves in accordance with one or more embodiments of the present disclosure; 1 is a schematic representation of a gas valve in a sealed position, according to one or more embodiments of the present disclosure; 1 is a schematic representation of a gas valve in an open position, according to one or more embodiments of the present disclosure;

Before describing several exemplary embodiments of the present disclosure, it is to be understood that the present disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or of being carried out in various ways.

As used in this specification and the appended claims, the term "substrate" refers to a surface or portion of a surface upon which a process acts. It will also be appreciated by those skilled in the art that references to a substrate may refer to only a portion of the substrate unless the context clearly indicates otherwise. Further, references to depositing on a substrate can refer to both a bare substrate and a substrate having one or more films or features deposited or formed thereon.

As used herein, "substrate" refers to any substrate or material surface formed on the substrate upon which film processing is performed during the fabrication process. For example, substrate surfaces on which processing may be performed include silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium, depending on the application. Including materials such as arsenic, glass, sapphire, and any other material such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. The substrate may be subjected to pretreatment processes to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/or bake the substrate surface. In addition to direct film processing on the surface of the substrate itself, in the present disclosure any of the disclosed film processing steps may also be performed on underlying layers formed on the substrate, as disclosed in more detail below. As may be practiced, the term "substrate surface" shall include such underlying layers as the context indicates. Thus, for example, if a film/layer or partial film/layer is deposited on a substrate surface, the exposed surface of the newly deposited film/layer becomes the substrate surface.

As used herein and in the appended claims, the terms "precursor," "reactant," "reactive gas," and the like, refer to any gas that reacts with the substrate surface or with a film formed on the substrate surface. used interchangeably to refer to any gas species that can

The present disclosure provides substrate supports for use with single-wafer or multi-wafer (also called batch) process chambers. 1 and 2 show a processing chamber 100 according to one or more embodiments of the present disclosure. FIG. 1 shows a processing chamber 100 shown as a cross-sectional isometric view, according to one or more embodiments of the present disclosure. FIG. 2 shows a processing chamber 100 in cross section according to one or more embodiments of the present disclosure. Accordingly, some embodiments of the present disclosure are directed to processing chambers 100 incorporating substrate support 200 .

Processing chamber 100 has a housing 102 with walls 104 and a bottom 106 .
The housing 102 together with the top plate 300 define an internal volume 109, also called a processing volume.

The processing chamber 100 shown includes a plurality of processing stations 110 . The processing stations 110 are located within the interior volume 109 of the housing 102 and are arranged in a circular configuration around the axis of rotation 211 of the substrate support 200 . Each processing station 110 includes a gas distribution plate 112 (also called gas injectors) having a front surface 114 . In some embodiments, the front surface 114 of each gas distribution plate 112 is substantially coplanar. A processing station 110 is defined as an area in which processing can take place. For example, in some embodiments, processing station 110 is defined as an area bounded by support surface 231 of substrate support 200 and front surface 114 of gas distribution plate 112, as described below. In the illustrated embodiment, heater 230 serves as a substrate support surface and forms part of substrate support 200 .

Processing station 110 may be configured to perform any suitable process and provide any suitable process conditions. The type of gas distribution plate 112 used depends, for example, on the type of processing being performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition device may have a showerhead or vortex-type gas injector. A processing station 110 configured to operate as a plasma station, on the other hand, includes one or more electrode and/or ground plate configurations for generating a plasma while allowing plasma gases to flow toward the wafer. can have The embodiment shown in FIG. 2 has a different type of processing station 110 on the left side of the drawing (processing station 110a) than on the right side of the drawing (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chambers, annealing stations and metrology stations.

FIG. 3 shows an exploded view of gas distribution assembly 105 for use in processing station 110 or process chamber, according to one or more embodiments of the present disclosure. Those skilled in the art will recognize that the embodiment shown in FIG. 3 is a general schematic and omits details (eg, gas channels). The gas distribution assembly 105 shown comprises three components: gas distribution plate 112 , lid 180 and optional spacer 330 . Spacers 330 are also referred to as pump/purge spacers, inserts, or pump/purge inserts. In some embodiments, spacer 330 is connected to or in fluid communication with a vacuum (exhaust). In some embodiments, spacer 330 is connected to or in fluid communication with a purge gas source.

The openings 310 in the top plate 300 can be uniformly sized or have different sizes. Different sized/shaped gas distribution plates 112 may be used with pump/purge spacers 330 suitably shaped to transition from opening 310 to gas distribution plate 112 . For example, as shown, pump/purge spacer 330 includes top 331 with sidewalls 335 and bottom 333 . Ledge 334 is configured to be positioned in opening 310 when inserted into opening 310 in top plate 300 .

Pump/purge spacer 330 includes openings 339 into which gas distribution plate 112 can be inserted. The gas distribution plate 112 shown has a flange 342 that can contact the ledge formed by the back surface 332 adjacent the top 331 of the pump/purge spacer 330 . The diameter or width of gas distribution plate 112 may be any suitable size that can fit within opening 339 of pump/purge spacer 330 . This allows different types of gas distribution plates 112 (also called gas injectors) to be used within the same openings 310 in the top plate 300 .

FIG. 4 illustrates a processing platform 400 according to one or more embodiments of the disclosure. The embodiment shown in FIG. 4 represents only one possible configuration and should not be taken as limiting the scope of the present disclosure. For example, in some embodiments, processing platform 400 has a different number of one or more of processing chambers 100, buffer stations 420 and/or robot 430 configurations than the illustrated embodiment.

The exemplary processing platform 400 includes a central transfer station 410 having multiple sides 411 , 412 , 413 , 414 . The transfer station 410 shown has a first side 411 , a second side 412 , a third side 413 and a fourth side 414 . Although four sides are shown, those skilled in the art will appreciate that there may be any suitable number of sides for transfer station 410 depending, for example, on the overall configuration of processing platform 400 . In some embodiments, the transfer station 410 has 3 sides, 4 sides, 5 sides, 6 sides, 7 sides, or 8 sides.

Transfer station 410 has a robot 430 positioned therein. Robot 430 may be any suitable robot capable of moving wafers during processing. In some embodiments, robot 430 has first arm 431 and second arm 432 . First arm 431 and second arm 432 can be moved independently of the other arms. First arm 431 and second arm 432 can move in the xy plane and/or along the z-axis. In some embodiments, robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each arm can move independently of the other arms.

The illustrated embodiment includes six processing chambers 100 , two of which are connected to each of second side 412 , third side 413 and fourth side 414 of central transfer station 410 . Each of the processing chambers 100 can be configured to perform different processes.

Processing platform 400 may also include one or more buffer stations 420 connected to first side 411 of central transfer station 410 . Buffer station 420 may perform the same or different functions. For example, the buffer stations may hold cassettes of wafers that are processed and returned to their original cassettes, or one of the buffer stations may hold unprocessed wafers that are moved to other buffer stations after processing. can hold In some embodiments, one or more of the buffer stations are configured to pretreat, preheat, or clean wafers before and/or after processing.

Processing platform 400 may also include one or more slit valves 418 between central transfer station 410 and any of processing chambers 100 . Slit valve 418 can be opened and closed to isolate the internal volume within processing chamber 100 from the environment within central transfer station 410 . For example, if a processing chamber generates plasma during processing, it may be useful to close the slit valve for that processing chamber to prevent stray plasma from damaging the robot in the transfer station.

Processing platform 400 may be connected to factory interface 450 to allow wafers or cassettes of wafers to be loaded into processing platform 400 . A robot 455 within the factory interface 450 can be used to move wafers or cassettes to and from the buffer station. Wafers or cassettes may be moved within processing platform 400 by robot 430 in central transfer station 410 . In some embodiments, factory interface 450 is a transfer station of another cluster tool (ie, another multi-chamber processing platform).

A controller 495 is provided and may be coupled to various components of processing platform 400 to control its operation. Controller 495 may be a single controller controlling the entire processing platform 400 or multiple controllers controlling individual portions of processing platform 400 . For example, the processing platform 400 of some embodiments comprises separate controllers for one or more of the individual processing chambers 100 , central transfer station 410 , factory interface 450 and/or robot 430 .

In some embodiments, the processing chamber 100 includes a plurality of substantially coplanar support surfaces 231 configured to control one or more of the first temperature or the second temperature. It further comprises a connected controller 495 . In one or more embodiments, controller 495 controls the speed of movement of substrate support 200 (FIG. 2).

In some embodiments, controller 495 includes a central processing unit (CPU) 496 , memory 497 and support circuitry 498 . Controller 495 may control processing platform 400 directly or through computers (or controllers) associated with particular process chambers and/or support system components.

Controller 495 can be one of any form of general purpose computer processor that can be used in an industrial environment to control the various chambers and sub-processors. The memory 497 or computer readable medium of the controller 495 may be random access memory (RAM), read only memory (ROM), floppy disk, hard disk, optical storage medium (eg, compact disk or digital video disk), flash drive, or local or any other form of digital storage remotely, one or more of which are readily available. Memory 497 may retain a set of instructions operable by a processor (CPU 496 ) to control parameters and components of processing platform 400 .

Support circuitry 498 is coupled to CPU 496 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuits, subsystems, and the like. One or more processes may be stored in memory 498 as software routines that, when executed or invoked by the processor, cause the processor to control the operation of the processing platform 400 or individual processing chambers in the manner described herein. The software routines may also be stored and/or executed by a second CPU (not shown) located remotely from the hardware controlled by CPU 496 .

Some or all of the processes and methods of this disclosure may also be implemented in hardware. As such, the processes may be implemented in software and executed using a computer system in hardware, such as an application specific integrated circuit or other type of hardware implementation, or as a combination of software and hardware. The software routines, when executed by the processor, transform a general-purpose computer into a special-purpose computer (controller) that controls chamber operations such that processes are performed.

In some embodiments, controller 495 has one or more configurations for executing individual processes or sub-processes for carrying out the method. Controller 495 may be configured to connect to and operate intermediate components for performing the functions of the method. For example, controller 495 may be connected to and configured to control one or more of gas valves, actuators, motors, slit valves, vacuum controls, or other components.

One or more embodiments of the present disclosure provide valves for eliminating or reducing dead volume. In some embodiments, the valve allows alternate cleaning and process gas supply in the chamber. Some embodiments of the present disclosure do not require any purging to prevent backflow. Some embodiments eliminate side-to-side concentration differences in the gas distribution plate due to purge gas flow from valve cleaning.

Some embodiments of the present disclosure are directed to methods and apparatus for introducing gases into substrate processing chambers. Dead volume can be eliminated using this valve. Some embodiments allow alternating cleaning and process gas supply in the chamber. In some embodiments, the need for special purging to replace dead volumes is eliminated.

One or more embodiments of the present disclosure reduce pressure upstream of the showerhead during movement in a spatial multi-wafer process tool to suppress chemistry within the station and prevent cross-talk of residual gas species. Some embodiments minimize CVD type processing performed in the ALD process. Some embodiments prevent residual chemistry cross-talk in spatial tools. Some embodiments improve cycle time by eliminating the need for time consuming purge and valve cleaning processes. Some embodiments improve film quality, resistivity, and/or conformality by creating a low pressure above the wafer after irradiation.

FIG. 5 shows a gas distribution apparatus 500 according to one or more embodiments of the present disclosure. As will be appreciated by those skilled in the art, the illustrated gas distribution apparatus may be incorporated into the processing chambers and process tools described with respect to FIGS. 1-4.

FIG. 5 shows valve 510 according to one or more embodiments of the present disclosure. Valve 510 is also referred to as a valve without dead volume. Valve 510 has a first suction line 520 that passes through the body of the valve. The first suction line has an upstream end 522 and a downstream end 524 that define the length of the first suction line 520 .

Valve 510 includes a second intake line 530 . Second suction line 530 has an upstream end 532 and a downstream end 534 that define the length of second suction line 530 . The shape of the suction line can be varied, with the length measured along the centerline of the line's flow path.

The first suction line 520 and the second suction line 530 are connected at a junction 525 . A downstream end 534 of the second suction line 530 connects with the first suction line 520 at a junction 525 . The junction of some embodiments is arranged along the length of the first suction line 520 . Stated another way, the junction 525 is located a distance from the upstream end 522 of the first suction line 520 and a distance from the downstream end 524 of the first suction line 520 . The junction 525 may be located at the same or different distances from the first inlet end 522 and from the first outlet end 524 . In some embodiments, junction 525 is located at approximately 50% of the length of first suction line 520 . In some embodiments, the junction is between 25% and 75% of the length of first suction line 520 .

Valve 510 includes a sealing surface 540 located at downstream end 534 of second suction line 530 . A sealing face 540 separates the first and second suction lines 520 and 530 to prevent fluid communication between the first and second suction lines 520 and 530 upstream of the sealing face 540 . configured to Stated another way, in some embodiments, the second intake line 530 has a valve 510 configured to allow gas flow only downstream. Sealing surface 540 may be manufactured from any suitable material compatible with the chemistry to be flowed through first suction line 520 and second suction line 530 . In some embodiments, sealing surface 540 comprises a check valve.

In the illustrated embodiment, valve 510 has a ball valve as movable sealing surface 540 . When insufficient flow is through the second inhalation line 530, the sealing surfaces prevent gas from flowing back into the second inhalation line 530 and gas from the second inhalation line 530 to the first inhalation line. It is in a sealed position covering the downstream end 534 of the second suction line 530 so that it cannot leak into 520 . Valve 510 with sealing surface 540 in the sealing position is shown in FIGS. 5 and 5A. As used in this manner, the term "sufficient flow differential" refers to the force exerted on seal surface 540 by gas flow 528 in first suction line 520 and the force exerted on seal surface 540 by gas flow 538 in second suction line 530. refers to the difference between the force applied to the sealing surface 540 by In some embodiments, the flow differential sufficient to move the sealing surface 540 to the sealing position is such that the force exerted by the gas flow 528 in the first intake line 520 is greater than the force exerted by the gas in the second intake line 530. It means greater than the force exerted by stream 538 by a threshold value. The threshold of some embodiments is required to move seal surface 540 from the sealed position to the open position relative to the force required to move seal surface 540 from the open position to the sealed position. Based at least in part on force. For example, the threshold in some embodiments is that the force required to close or seal valve 510 is such that the valve opens and gas flow 538 in second intake line 530 exceeds sealing surface 540 . If it is less than the force required to allow it to flow through it, it will fluctuate, or vice versa.

FIG. 5B shows valve 510 with sealing surface 540 in the open position. When there is a sufficient flow differential between the first suction line 520 and the second suction line 530, the sealing surface 540 enters from the downstream end 534 of the second suction line 530 into the junction 525 and It moves to allow fluid communication out of the downstream end 524 of the first suction line 520 to occur. In some embodiments, movement of seal face 540 between a sealed position (shown in FIG. 5A) and an open position (shown in FIG. into the first suction line 520 .

In some embodiments, sealing surface 540 is configured to move to the open position when the force exerted by flow in second intake line 530 is greater than a threshold value. The threshold of some embodiments produces less force on the seal face 540 than the flow in the first suction line 520 to move the seal face 540 to the open position.

The sealing surface 540 of some embodiments allows fluid movement through the second suction line 530 to enter the first suction line 520 at the junction 525 . In some embodiments, sealing surface 540 prevents fluid from first suction line 520 from entering downstream end 534 of second suction line 530 .

In some embodiments, when gas flows through second intake line 530, seal face 540 moves to the open position. In some embodiments, gas flow and/or pressure in second intake line 530 exceeds a predetermined pressure and/or flow rate to move seal surface 540 . In some embodiments, the sealing surface 540 is activated when there is no gas flow in the second inhalation line 530 or when the pressure in the second inhalation line 530 falls below a predetermined threshold (Fig. 5) to the closed position. In some embodiments, the threshold for opening/closing seal surface 540 is based on the differential pressure between second suction line 530 and first suction line 520 . In some embodiments, the threshold for opening the sealing faces is different than the threshold for closing the sealing faces.

In some embodiments, there is no dead volume in valve 510 . Dead volume is the space after a gas has swirled and clogged, thereby stopping the flow, where some of that gas species remains and can be added to the next gas stream.

Although two suction lines are shown in FIG. 5, those skilled in the art will recognize that three or more suction lines are within the scope of the present disclosure. For example, the valve can have a third suction line (not shown) that connects to the first suction line 520 or the second suction line 530 at a second junction (not shown). In some embodiments, the third inhalation line connects to the first inhalation line 520 at the same junction 525 as the second inhalation line 530 . In some embodiments, the third intake line is configured as a purge line.

Some embodiments of gas distribution apparatus 500 include gas distribution assembly 105 . The illustrated embodiment shows the gas distribution plate 112 as part of the device 500 . In some embodiments, gas distribution plate 112 is in fluid communication with second end 524 and first suction line 520 . In some embodiments, gas distribution plate 112 includes a showerhead.

FIG. 5 shows an embodiment including an optional remote plasma source 550 . A remote plasma source (RPS) 550 of some embodiments is positioned between the downstream end 524 of the first intake line 520 and the gas distribution plate 112 . Remote plasma source 550 can be any suitable plasma source known to those skilled in the art. Suitable sources include, but are not limited to, capacitively coupled plasma (CCP) sources, inductively coupled plasma (ICP) sources, microwave plasma sources.

In some embodiments, there is a gas manifold 560 (shown in FIG. 4) between the downstream end 524 of the first intake line 520 and the gas distribution plate 112 . In some embodiments, gas manifolds separate the gas flow exiting valve 510 into multiple process chambers or processing stations. In some embodiments, there is a gas manifold 560 between the downstream end 524 of the first intake line 520 and the remote plasma source 550 .

References to "one embodiment," "some embodiments," "one or more embodiments," or "embodiments" throughout this specification may refer to the specific features, structures, materials described with respect to the embodiments. , or that the feature is included in at least one embodiment of the present disclosure. Thus, the appearance of phrases such as "in one or more embodiments," "in some embodiments," "in one embodiment," or "in an embodiment" in various places throughout this specification are not necessarily They do not necessarily refer to the same embodiment of the disclosure. Moreover, the particular features, structures, materials, or properties may be combined in any suitable manner in one or more embodiments.

Although the disclosure herein has been described with respect to particular embodiments, those skilled in the art will appreciate that the described embodiments are merely illustrative of the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed method and apparatus without departing from the spirit and scope of the disclosure. Thus, this disclosure may include modifications and variations that come within the scope of the appended claims and their equivalents.

Claims (20)

a first suction line having an upstream end and a downstream end defining a length of said first suction line;
A second suction line having an upstream end and a downstream end defining a length of said second suction line, said downstream end of said suction line being said a second inhalation line connecting with the first inhalation line along its length;
A sealing surface at the downstream end of the second suction line, the sealing surface between the first suction line and the second suction line to prevent fluid communication between the first suction line and the second suction line. A gas distribution device comprising a valve having a sealing surface configured to separate two suction lines. The sealing surface permits movement of fluid through the second suction line into the first suction line, and fluid from the first suction line passes through the downstream of the second suction line. 2. The gas distribution apparatus of claim 1, which prevents edge entry. 2. The gas distribution device of claim 1, wherein there is no dead volume in said valve. 2. The gas distribution apparatus of claim 1, further comprising a gas distribution plate in fluid communication with said second end of said first suction line. 5. The gas distribution apparatus of Claim 4, wherein the gas distribution plate comprises a showerhead. 6. The gas distribution apparatus of Claim 5, further comprising a remote plasma source between said downstream end of said first suction line and said gas distribution plate. 7. The gas distribution apparatus of Claim 6, further comprising a gas manifold between said downstream end of said first suction line and said remote plasma source. 2. The gas distribution apparatus of claim 1, wherein said seal face moves to an open position when gas flowing through said second intake line exceeds a predetermined pressure. 9. The sealing surface of claim 8, wherein the sealing surface moves to the closed position when there is no gas flow in the second suction line or when pressure in the second line falls below a predetermined threshold. gas distribution device. a processing chamber,
a gas distribution device having a valve, the valve comprising:
a first suction line having an upstream end and a downstream end defining a length of said first suction line;
A second suction line having an upstream end and a downstream end defining a length of said second suction line, said downstream end of said suction line being said a second inhalation line connecting with the first inhalation line along its length;
A sealing surface at the downstream end of the second suction line, the sealing surface between the first suction line and the second suction line to prevent fluid communication between the first suction line and the second suction line. a sealing surface configured to separate two suction lines, the processing chamber further comprising:
A gas distribution plate in fluid communication with said second end of said first suction line and having a front surface with a plurality of apertures through which said flow of gas is directed. a gas distribution plate allowing passage through the gas distribution plate;
a spacer around the gas distribution plate, the spacer in an opening at the top of the processing chamber;
a substrate support inside the processing chamber, the substrate support having a support surface spaced a distance from the front surface of the gas distribution plate. The sealing surface of the valve permits fluid movement through the second suction line to enter the first suction line, and fluid from the first suction line passes through the second suction line. 11. The processing chamber of claim 10, preventing entry into the downstream end of the. 11. The processing chamber of Claim 10, wherein there is no dead volume in said valve. 11. The processing chamber of Claim 10, wherein the gas distribution plate comprises a showerhead. 11. The processing chamber of Claim 10, further comprising a remote plasma source between said downstream end of said first suction line and said gas distribution plate. 15. The processing chamber of Claim 14, further comprising a gas manifold between said downstream end of said first suction line and said remote plasma source. 11. The processing chamber of claim 10, wherein the sealing surface moves to an open position when gas flowing through the second suction line exceeds a predetermined pressure. 17. The sealing surface of claim 16, wherein the sealing surface moves to the closed position when there is no gas flow in the second suction line or when pressure in the second line falls below a predetermined threshold. processing chamber. A processing method comprising:
flowing a first gas into a processing chamber through a first intake line of the dead volume free valve, the dead volume free valve comprising:
said first suction line having an upstream end and a downstream end defining a length of said first suction line;
A second suction line having an upstream end and a downstream end defining a length of said second suction line, said downstream end of said suction line being said a second inhalation line connecting with the first inhalation line along its length;
A sealing surface at the downstream end of the second suction line, the sealing surface between the first suction line and the second suction line to prevent fluid communication between the first suction line and the second suction line. a sealing surface configured to separate the two suction lines, the method further comprising:
flowing a second gas into the processing chamber through the second inlet line of the dead volume-free valve;
The method of treatment wherein the first gas does not flow into the second intake line and switching between the first gas and the second gas does not include a purge step to remove residual gas from the valve. 19. The method of claim 18, further comprising igniting a plasma from one or more of the first gas or the second gas in a remote plasma source located downstream of the dead volume free valve. Processing method. when the second gas flowing through the second suction line exceeds a predetermined pressure, the second gas causes the seal surface to move to an open position, allowing gas flow into the second suction line; 19. The method of claim 18, wherein the sealing surface moves to the closed position when there is no pressure or when the pressure in the second line falls below a predetermined threshold.

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