TWI601220B - 於活性電漿中用於原位量測之高溫感測器晶圓 - Google Patents
於活性電漿中用於原位量測之高溫感測器晶圓 Download PDFInfo
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- TWI601220B TWI601220B TW103100512A TW103100512A TWI601220B TW I601220 B TWI601220 B TW I601220B TW 103100512 A TW103100512 A TW 103100512A TW 103100512 A TW103100512 A TW 103100512A TW I601220 B TWI601220 B TW I601220B
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- 238000012625 in-situ measurement Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 102
- 238000000034 method Methods 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 44
- 238000012545 processing Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000010935 stainless steel Substances 0.000 claims description 9
- 229910001220 stainless steel Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004964 aerogel Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000006260 foam Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
- G01K1/12—Protective devices, e.g. casings for preventing damage due to heat overloading
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K2215/00—Details concerning sensor power supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361749872P | 2013-01-07 | 2013-01-07 | |
| US13/787,178 US9222842B2 (en) | 2013-01-07 | 2013-03-06 | High temperature sensor wafer for in-situ measurements in active plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201442131A TW201442131A (zh) | 2014-11-01 |
| TWI601220B true TWI601220B (zh) | 2017-10-01 |
Family
ID=51060920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103100512A TWI601220B (zh) | 2013-01-07 | 2014-01-07 | 於活性電漿中用於原位量測之高溫感測器晶圓 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9222842B2 (enExample) |
| JP (1) | JP6184518B2 (enExample) |
| KR (1) | KR101972202B1 (enExample) |
| CN (2) | CN109781281A (enExample) |
| TW (1) | TWI601220B (enExample) |
| WO (1) | WO2014107665A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9304160B1 (en) | 2012-05-08 | 2016-04-05 | Kla-Tencor Corporation | Defect inspection apparatus, system, and method |
| US9719867B2 (en) | 2013-05-30 | 2017-08-01 | Kla-Tencor Corporation | Method and system for measuring heat flux |
| US9620400B2 (en) | 2013-12-21 | 2017-04-11 | Kla-Tencor Corporation | Position sensitive substrate device |
| US9891114B2 (en) * | 2014-05-28 | 2018-02-13 | Hamilton Sundstrand Corporation | Flexible laminated thermocouple |
| US11150140B2 (en) | 2016-02-02 | 2021-10-19 | Kla Corporation | Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications |
| US10228290B2 (en) | 2016-04-13 | 2019-03-12 | Board Of Regents, The University Of Texas System | Systems and methods for wireless temperature sensing |
| US10651095B2 (en) * | 2016-08-11 | 2020-05-12 | Applied Materials, Inc. | Thermal profile monitoring wafer and methods of monitoring temperature |
| US20180366354A1 (en) * | 2017-06-19 | 2018-12-20 | Applied Materials, Inc. | In-situ semiconductor processing chamber temperature apparatus |
| KR102393780B1 (ko) | 2017-07-19 | 2022-05-03 | (주)포인트엔지니어링 | 공정분위기 측정센서 |
| CN110998820B (zh) | 2017-08-17 | 2023-10-20 | 东京毅力科创株式会社 | 用于实时感测工业制造设备中的属性的装置和方法 |
| KR102010448B1 (ko) * | 2017-09-20 | 2019-08-13 | (주)에스엔텍 | 가스 유량 센서 및 가스 유량 측정 장치 |
| KR20190133926A (ko) | 2018-05-24 | 2019-12-04 | 한국과학기술원 | 웨이퍼형 복합 무선 센서 및 이를 이용한 웨이퍼 처리 챔버 센싱 방법 |
| CN112088303A (zh) | 2018-06-18 | 2020-12-15 | 东京毅力科创株式会社 | 对制造设备中的特性的降低干扰的实时感测 |
| US10916411B2 (en) | 2018-08-13 | 2021-02-09 | Tokyo Electron Limited | Sensor-to-sensor matching methods for chamber matching |
| KR102136466B1 (ko) * | 2018-09-11 | 2020-07-22 | 주식회사 이큐셀 | 고온 공정 진단이 가능한 웨이퍼 센서 |
| US11371892B2 (en) * | 2019-06-28 | 2022-06-28 | Fluke Corporation | Platinum resistance temperature sensor having floating platinum member |
| KR102382971B1 (ko) * | 2019-11-05 | 2022-04-05 | 이트론 주식회사 | 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법 |
| US11924972B2 (en) | 2020-06-02 | 2024-03-05 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
| US11589474B2 (en) | 2020-06-02 | 2023-02-21 | Applied Materials, Inc. | Diagnostic disc with a high vacuum and temperature tolerant power source |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW594455B (en) * | 2001-04-19 | 2004-06-21 | Onwafer Technologies Inc | Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control |
| TW200532753A (en) * | 2004-03-31 | 2005-10-01 | Advanced Energy Ind Inc | Techniques for packaging and encapsulating components of diagnostic plasma measurement devices |
| US20060174720A1 (en) * | 2002-01-24 | 2006-08-10 | Sensarray Corporation | Process condition sensing wafer and data analysis system |
| US20070251339A1 (en) * | 2006-05-01 | 2007-11-01 | Sensarray Corporation | Process Condition Measuring Device with Shielding |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6359333B1 (en) | 1998-03-31 | 2002-03-19 | Honeywell International Inc. | Wafer-pair having deposited layer sealed chambers |
| US6627892B2 (en) | 2000-12-29 | 2003-09-30 | Honeywell International Inc. | Infrared detector packaged with improved antireflection element |
| US6776873B1 (en) | 2002-02-14 | 2004-08-17 | Jennifer Y Sun | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers |
| US7151366B2 (en) * | 2002-12-03 | 2006-12-19 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
| US7135852B2 (en) | 2002-12-03 | 2006-11-14 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
| KR100715112B1 (ko) | 2003-07-25 | 2007-05-10 | 주식회사 오카스 | 2층 구조의 비냉각형 적외선 센서 및 그 제조방법 |
| KR101196297B1 (ko) | 2003-07-29 | 2012-11-06 | 쿄세라 코포레이션 | Ｙ₂ｏ₃질 소결체, 내식성 부재 및 그 제조방법, 및반도체?액정제조장치용 부재 |
| DE10352002A1 (de) | 2003-11-07 | 2005-06-09 | Robert Bosch Gmbh | Sensormodul |
| US7110110B2 (en) | 2003-12-29 | 2006-09-19 | Tokyo Electron Limited | Sensing component used to monitor material buildup and material erosion of consumables by optical emission |
| JP2005347487A (ja) * | 2004-06-02 | 2005-12-15 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| FR2875948B1 (fr) | 2004-09-28 | 2006-12-08 | Commissariat Energie Atomique | Composant d'encapsulation de micro-systeme electromecaniques integres et procede de realisation du composant |
| US7348193B2 (en) | 2005-06-30 | 2008-03-25 | Corning Incorporated | Hermetic seals for micro-electromechanical system devices |
| TWI405281B (zh) | 2005-12-13 | 2013-08-11 | Sensarray Corp | 製程條件感應晶圓及資料分析系統 |
| JP4860375B2 (ja) * | 2006-06-30 | 2012-01-25 | 富士通株式会社 | Ｒｆｉｄタグ |
| DE102006031772A1 (de) | 2006-07-10 | 2008-01-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Sensorelements sowie Sensorelement |
| JP5193639B2 (ja) * | 2008-03-19 | 2013-05-08 | 株式会社東芝 | マイクロマシン装置及びマイクロマシン装置の製造方法 |
| JP5098045B2 (ja) * | 2008-04-28 | 2012-12-12 | 東京電波株式会社 | 圧電温度センサとシリコンウエハ温度測定冶具 |
| JP5123146B2 (ja) | 2008-11-25 | 2013-01-16 | パナソニック株式会社 | 赤外線センサおよびその製造方法 |
| DE102009002559A1 (de) | 2009-04-22 | 2010-10-28 | Robert Bosch Gmbh | Sensoranordnung |
| CN101991877B (zh) * | 2010-11-02 | 2012-07-25 | 陕西科技大学 | 一种三相CaP-玻璃涂层/多孔Al2O3支架生物复合材料的制备方法 |
| JP2012123330A (ja) * | 2010-12-10 | 2012-06-28 | Canon Inc | 画像形成装置 |
| JP2012163525A (ja) * | 2011-02-09 | 2012-08-30 | Sumitomo Heavy Ind Ltd | 温度測定器、成膜装置、及び成膜基板製造方法 |
-
2013
- 2013-03-06 US US13/787,178 patent/US9222842B2/en active Active
-
2014
- 2014-01-06 WO PCT/US2014/010349 patent/WO2014107665A1/en not_active Ceased
- 2014-01-06 KR KR1020157021003A patent/KR101972202B1/ko active Active
- 2014-01-06 CN CN201811367416.1A patent/CN109781281A/zh active Pending
- 2014-01-06 CN CN201480004168.8A patent/CN104903991B/zh active Active
- 2014-01-06 JP JP2015551811A patent/JP6184518B2/ja active Active
- 2014-01-07 TW TW103100512A patent/TWI601220B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW594455B (en) * | 2001-04-19 | 2004-06-21 | Onwafer Technologies Inc | Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control |
| US20060174720A1 (en) * | 2002-01-24 | 2006-08-10 | Sensarray Corporation | Process condition sensing wafer and data analysis system |
| TW200532753A (en) * | 2004-03-31 | 2005-10-01 | Advanced Energy Ind Inc | Techniques for packaging and encapsulating components of diagnostic plasma measurement devices |
| US20070251339A1 (en) * | 2006-05-01 | 2007-11-01 | Sensarray Corporation | Process Condition Measuring Device with Shielding |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104903991B (zh) | 2018-12-11 |
| CN109781281A (zh) | 2019-05-21 |
| JP2016505218A (ja) | 2016-02-18 |
| US20140192840A1 (en) | 2014-07-10 |
| WO2014107665A1 (en) | 2014-07-10 |
| KR20150104145A (ko) | 2015-09-14 |
| JP6184518B2 (ja) | 2017-08-23 |
| TW201442131A (zh) | 2014-11-01 |
| CN104903991A (zh) | 2015-09-09 |
| KR101972202B1 (ko) | 2019-04-24 |
| US9222842B2 (en) | 2015-12-29 |
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