KR101972202B1 - 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 - Google Patents

활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 Download PDF

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KR101972202B1
KR101972202B1 KR1020157021003A KR20157021003A KR101972202B1 KR 101972202 B1 KR101972202 B1 KR 101972202B1 KR 1020157021003 A KR1020157021003 A KR 1020157021003A KR 20157021003 A KR20157021003 A KR 20157021003A KR 101972202 B1 KR101972202 B1 KR 101972202B1
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KR20150104145A (ko
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메이 순
얼 젠센
파핫 쿨리
스티븐 샤랏
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케이엘에이-텐코 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/08—Protective devices, e.g. casings
    • G01K1/12—Protective devices, e.g. casings for preventing damage due to heat overloading
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • H01L22/30—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2215/00—Details concerning sensor power supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020157021003A 2013-01-07 2014-01-06 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 Active KR101972202B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361749872P 2013-01-07 2013-01-07
US61/749,872 2013-01-07
US13/787,178 2013-03-06
US13/787,178 US9222842B2 (en) 2013-01-07 2013-03-06 High temperature sensor wafer for in-situ measurements in active plasma
PCT/US2014/010349 WO2014107665A1 (en) 2013-01-07 2014-01-06 High temperature sensor wafer for in-situ measurements in active plasma

Publications (2)

Publication Number Publication Date
KR20150104145A KR20150104145A (ko) 2015-09-14
KR101972202B1 true KR101972202B1 (ko) 2019-04-24

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KR1020157021003A Active KR101972202B1 (ko) 2013-01-07 2014-01-06 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼

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US (1) US9222842B2 (enExample)
JP (1) JP6184518B2 (enExample)
KR (1) KR101972202B1 (enExample)
CN (2) CN109781281A (enExample)
TW (1) TWI601220B (enExample)
WO (1) WO2014107665A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
CN105358949B (zh) 2013-05-30 2018-03-02 科磊股份有限公司 用于测量热通量的方法及系统
US9620400B2 (en) 2013-12-21 2017-04-11 Kla-Tencor Corporation Position sensitive substrate device
US9891114B2 (en) * 2014-05-28 2018-02-13 Hamilton Sundstrand Corporation Flexible laminated thermocouple
US11150140B2 (en) 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10228290B2 (en) 2016-04-13 2019-03-12 Board Of Regents, The University Of Texas System Systems and methods for wireless temperature sensing
US10651095B2 (en) * 2016-08-11 2020-05-12 Applied Materials, Inc. Thermal profile monitoring wafer and methods of monitoring temperature
US20180366354A1 (en) * 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
KR102393780B1 (ko) 2017-07-19 2022-05-03 (주)포인트엔지니어링 공정분위기 측정센서
US11114321B2 (en) 2017-08-17 2021-09-07 Tokyo Electron Limited Apparatus and method for real-time sensing of properties in industrial manufacturing equipment
KR102010448B1 (ko) * 2017-09-20 2019-08-13 (주)에스엔텍 가스 유량 센서 및 가스 유량 측정 장치
KR20190133926A (ko) 2018-05-24 2019-12-04 한국과학기술원 웨이퍼형 복합 무선 센서 및 이를 이용한 웨이퍼 처리 챔버 센싱 방법
JP7357191B2 (ja) 2018-06-18 2023-10-06 東京エレクトロン株式会社 製造装置における特性の低干渉でのリアルタイム感知
US10916411B2 (en) 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching
KR102136466B1 (ko) * 2018-09-11 2020-07-22 주식회사 이큐셀 고온 공정 진단이 가능한 웨이퍼 센서
US11371892B2 (en) * 2019-06-28 2022-06-28 Fluke Corporation Platinum resistance temperature sensor having floating platinum member
KR102382971B1 (ko) * 2019-11-05 2022-04-05 이트론 주식회사 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법
US11589474B2 (en) * 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513583A (ja) 2002-12-03 2006-04-20 センサレー コーポレイション 統合化されたプロセス条件検知用ウェハおよびデータ解析システム
JP2007208249A (ja) 2005-12-13 2007-08-16 Sensarray Corp 処理条件検知ウェハおよびデータ分析システム
JP2009535855A (ja) 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6359333B1 (en) 1998-03-31 2002-03-19 Honeywell International Inc. Wafer-pair having deposited layer sealed chambers
US6627892B2 (en) 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
TW594455B (en) * 2001-04-19 2004-06-21 Onwafer Technologies Inc Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
US6776873B1 (en) 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US7135852B2 (en) 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
KR100715112B1 (ko) 2003-07-25 2007-05-10 주식회사 오카스 2층 구조의 비냉각형 적외선 센서 및 그 제조방법
JP4679366B2 (ja) 2003-07-29 2011-04-27 京セラ株式会社 Ｙ２ｏ３質焼結体、耐食性部材およびその製造方法並びに半導体・液晶製造装置用部材
DE10352002A1 (de) 2003-11-07 2005-06-09 Robert Bosch Gmbh Sensormodul
US7110110B2 (en) 2003-12-29 2006-09-19 Tokyo Electron Limited Sensing component used to monitor material buildup and material erosion of consumables by optical emission
US20050217796A1 (en) * 2004-03-31 2005-10-06 Carter Daniel C Techniques for packaging and encapsulating components of diagnostic plasma measurement devices
JP2005347487A (ja) * 2004-06-02 2005-12-15 Matsushita Electric Ind Co Ltd 半導体装置
FR2875948B1 (fr) * 2004-09-28 2006-12-08 Commissariat Energie Atomique Composant d'encapsulation de micro-systeme electromecaniques integres et procede de realisation du composant
US7348193B2 (en) 2005-06-30 2008-03-25 Corning Incorporated Hermetic seals for micro-electromechanical system devices
JP4860375B2 (ja) * 2006-06-30 2012-01-25 富士通株式会社 Ｒｆｉｄタグ
DE102006031772A1 (de) 2006-07-10 2008-01-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Sensorelements sowie Sensorelement
JP5193639B2 (ja) * 2008-03-19 2013-05-08 株式会社東芝 マイクロマシン装置及びマイクロマシン装置の製造方法
JP5098045B2 (ja) * 2008-04-28 2012-12-12 東京電波株式会社 圧電温度センサとシリコンウエハ温度測定冶具
JP5123146B2 (ja) 2008-11-25 2013-01-16 パナソニック株式会社 赤外線センサおよびその製造方法
DE102009002559A1 (de) 2009-04-22 2010-10-28 Robert Bosch Gmbh Sensoranordnung
CN101991877B (zh) * 2010-11-02 2012-07-25 陕西科技大学 一种三相CaP-玻璃涂层/多孔Al2O3支架生物复合材料的制备方法
JP2012123330A (ja) * 2010-12-10 2012-06-28 Canon Inc 画像形成装置
JP2012163525A (ja) * 2011-02-09 2012-08-30 Sumitomo Heavy Ind Ltd 温度測定器、成膜装置、及び成膜基板製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513583A (ja) 2002-12-03 2006-04-20 センサレー コーポレイション 統合化されたプロセス条件検知用ウェハおよびデータ解析システム
JP2007208249A (ja) 2005-12-13 2007-08-16 Sensarray Corp 処理条件検知ウェハおよびデータ分析システム
JP2009535855A (ja) 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Also Published As

Publication number Publication date
TW201442131A (zh) 2014-11-01
CN109781281A (zh) 2019-05-21
WO2014107665A1 (en) 2014-07-10
US20140192840A1 (en) 2014-07-10
JP2016505218A (ja) 2016-02-18
TWI601220B (zh) 2017-10-01
CN104903991A (zh) 2015-09-09
KR20150104145A (ko) 2015-09-14
JP6184518B2 (ja) 2017-08-23
US9222842B2 (en) 2015-12-29
CN104903991B (zh) 2018-12-11

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