KR101972202B1 - 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 - Google Patents

활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 Download PDF

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KR101972202B1
KR101972202B1 KR1020157021003A KR20157021003A KR101972202B1 KR 101972202 B1 KR101972202 B1 KR 101972202B1 KR 1020157021003 A KR1020157021003 A KR 1020157021003A KR 20157021003 A KR20157021003 A KR 20157021003A KR 101972202 B1 KR101972202 B1 KR 101972202B1
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KR20150104145A (ko
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메이 순
얼 젠센
파핫 쿨리
스티븐 샤랏
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케이엘에이-텐코 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/08—Protective devices, e.g. casings
    • G01K1/12—Protective devices, e.g. casings for preventing damage due to heat overloading
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K2215/00—Details concerning sensor power supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020157021003A 2013-01-07 2014-01-06 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼 Active KR101972202B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361749872P 2013-01-07 2013-01-07
US61/749,872 2013-01-07
US13/787,178 2013-03-06
US13/787,178 US9222842B2 (en) 2013-01-07 2013-03-06 High temperature sensor wafer for in-situ measurements in active plasma
PCT/US2014/010349 WO2014107665A1 (en) 2013-01-07 2014-01-06 High temperature sensor wafer for in-situ measurements in active plasma

Publications (2)

Publication Number Publication Date
KR20150104145A KR20150104145A (ko) 2015-09-14
KR101972202B1 true KR101972202B1 (ko) 2019-04-24

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KR1020157021003A Active KR101972202B1 (ko) 2013-01-07 2014-01-06 활성 플라즈마에서의 인시츄 측정들을 위한 고온 센서 웨이퍼

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US (1) US9222842B2 (enExample)
JP (1) JP6184518B2 (enExample)
KR (1) KR101972202B1 (enExample)
CN (2) CN109781281A (enExample)
TW (1) TWI601220B (enExample)
WO (1) WO2014107665A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9304160B1 (en) 2012-05-08 2016-04-05 Kla-Tencor Corporation Defect inspection apparatus, system, and method
WO2014194077A2 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Method and system for measuring heat flux
US9620400B2 (en) 2013-12-21 2017-04-11 Kla-Tencor Corporation Position sensitive substrate device
US9891114B2 (en) * 2014-05-28 2018-02-13 Hamilton Sundstrand Corporation Flexible laminated thermocouple
US11150140B2 (en) 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
US10228290B2 (en) 2016-04-13 2019-03-12 Board Of Regents, The University Of Texas System Systems and methods for wireless temperature sensing
US10651095B2 (en) * 2016-08-11 2020-05-12 Applied Materials, Inc. Thermal profile monitoring wafer and methods of monitoring temperature
US20180366354A1 (en) * 2017-06-19 2018-12-20 Applied Materials, Inc. In-situ semiconductor processing chamber temperature apparatus
KR102393780B1 (ko) 2017-07-19 2022-05-03 (주)포인트엔지니어링 공정분위기 측정센서
JP7233803B2 (ja) 2017-08-17 2023-03-07 東京エレクトロン株式会社 工業用製造機器における特性をリアルタイム感知するための装置及び方法
KR102010448B1 (ko) * 2017-09-20 2019-08-13 (주)에스엔텍 가스 유량 센서 및 가스 유량 측정 장치
KR20190133926A (ko) 2018-05-24 2019-12-04 한국과학기술원 웨이퍼형 복합 무선 센서 및 이를 이용한 웨이퍼 처리 챔버 센싱 방법
JP7357191B2 (ja) 2018-06-18 2023-10-06 東京エレクトロン株式会社 製造装置における特性の低干渉でのリアルタイム感知
US10916411B2 (en) 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching
KR102136466B1 (ko) * 2018-09-11 2020-07-22 주식회사 이큐셀 고온 공정 진단이 가능한 웨이퍼 센서
US11371892B2 (en) * 2019-06-28 2022-06-28 Fluke Corporation Platinum resistance temperature sensor having floating platinum member
KR102382971B1 (ko) * 2019-11-05 2022-04-05 이트론 주식회사 반도체 공정 진단을 위한 온도 센서 장치 및 이의 제조 방법
US11589474B2 (en) 2020-06-02 2023-02-21 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source
US11924972B2 (en) 2020-06-02 2024-03-05 Applied Materials, Inc. Diagnostic disc with a high vacuum and temperature tolerant power source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513583A (ja) 2002-12-03 2006-04-20 センサレー コーポレイション 統合化されたプロセス条件検知用ウェハおよびデータ解析システム
JP2007208249A (ja) 2005-12-13 2007-08-16 Sensarray Corp 処理条件検知ウェハおよびデータ分析システム
JP2009535855A (ja) 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6359333B1 (en) 1998-03-31 2002-03-19 Honeywell International Inc. Wafer-pair having deposited layer sealed chambers
US6627892B2 (en) 2000-12-29 2003-09-30 Honeywell International Inc. Infrared detector packaged with improved antireflection element
TW594455B (en) * 2001-04-19 2004-06-21 Onwafer Technologies Inc Methods and apparatus for obtaining data for process operation, optimization, monitoring, and control
US7757574B2 (en) * 2002-01-24 2010-07-20 Kla-Tencor Corporation Process condition sensing wafer and data analysis system
US6776873B1 (en) 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
US7135852B2 (en) 2002-12-03 2006-11-14 Sensarray Corporation Integrated process condition sensing wafer and data analysis system
KR100715112B1 (ko) 2003-07-25 2007-05-10 주식회사 오카스 2층 구조의 비냉각형 적외선 센서 및 그 제조방법
JP4679366B2 (ja) 2003-07-29 2011-04-27 京セラ株式会社 Ｙ２ｏ３質焼結体、耐食性部材およびその製造方法並びに半導体・液晶製造装置用部材
DE10352002A1 (de) 2003-11-07 2005-06-09 Robert Bosch Gmbh Sensormodul
US7110110B2 (en) 2003-12-29 2006-09-19 Tokyo Electron Limited Sensing component used to monitor material buildup and material erosion of consumables by optical emission
US20050217796A1 (en) * 2004-03-31 2005-10-06 Carter Daniel C Techniques for packaging and encapsulating components of diagnostic plasma measurement devices
JP2005347487A (ja) * 2004-06-02 2005-12-15 Matsushita Electric Ind Co Ltd 半導体装置
FR2875948B1 (fr) 2004-09-28 2006-12-08 Commissariat Energie Atomique Composant d'encapsulation de micro-systeme electromecaniques integres et procede de realisation du composant
US7348193B2 (en) 2005-06-30 2008-03-25 Corning Incorporated Hermetic seals for micro-electromechanical system devices
JP4860375B2 (ja) * 2006-06-30 2012-01-25 富士通株式会社 Ｒｆｉｄタグ
DE102006031772A1 (de) 2006-07-10 2008-01-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Sensorelements sowie Sensorelement
JP5193639B2 (ja) * 2008-03-19 2013-05-08 株式会社東芝 マイクロマシン装置及びマイクロマシン装置の製造方法
JP5098045B2 (ja) * 2008-04-28 2012-12-12 東京電波株式会社 圧電温度センサとシリコンウエハ温度測定冶具
JP5123146B2 (ja) 2008-11-25 2013-01-16 パナソニック株式会社 赤外線センサおよびその製造方法
DE102009002559A1 (de) 2009-04-22 2010-10-28 Robert Bosch Gmbh Sensoranordnung
CN101991877B (zh) * 2010-11-02 2012-07-25 陕西科技大学 一种三相CaP-玻璃涂层/多孔Al2O3支架生物复合材料的制备方法
JP2012123330A (ja) * 2010-12-10 2012-06-28 Canon Inc 画像形成装置
JP2012163525A (ja) * 2011-02-09 2012-08-30 Sumitomo Heavy Ind Ltd 温度測定器、成膜装置、及び成膜基板製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006513583A (ja) 2002-12-03 2006-04-20 センサレー コーポレイション 統合化されたプロセス条件検知用ウェハおよびデータ解析システム
JP2007208249A (ja) 2005-12-13 2007-08-16 Sensarray Corp 処理条件検知ウェハおよびデータ分析システム
JP2009535855A (ja) 2006-05-01 2009-10-01 ケーエルエー−テンカー・コーポレーション シールドを備えるプロセス条件測定素子

Also Published As

Publication number Publication date
CN109781281A (zh) 2019-05-21
TWI601220B (zh) 2017-10-01
JP2016505218A (ja) 2016-02-18
KR20150104145A (ko) 2015-09-14
CN104903991B (zh) 2018-12-11
US20140192840A1 (en) 2014-07-10
CN104903991A (zh) 2015-09-09
JP6184518B2 (ja) 2017-08-23
TW201442131A (zh) 2014-11-01
US9222842B2 (en) 2015-12-29
WO2014107665A1 (en) 2014-07-10

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